Abstract: A chip package structure is provided. The chip package structure includes a substrate. The chip package structure also includes a first chip structure and a second chip structure over the substrate. The chip package structure further includes an anti-warpage bar between the first chip structure and the second chip structure. In addition, the chip package structure includes an underfill layer between the first chip structure and the second chip structure and between the anti-warpage bar and the substrate. A topmost surface of the underfill layer is lower than a top surface of the anti-warpage bar.

Abstract: Methods/structures of joining package structures are described. Those methods/structures may include a die disposed on a surface of a substrate, an interconnect bridge embedded in the substrate, and at least one vertical interconnect structure disposed through a portion of the interconnect bridge, wherein the at least one vertical interconnect structure is electrically and physically coupled to the die.

Abstract: A semiconductor package includes a substrate having a top planar surface and a semiconductor die mounted on the top planar surface of the substrate. Bond wires electrically connect the semiconductor die to the substrate. Flow control dams are integrally formed with the top planar surface of the substrate and each flow control dam protrudes from the top planar surface of the substrate at a location proximate to the bond wires. The flow control dams reduce the occurrence of wire sweep in the bond wires electrically connected to the substrate and semiconductor die.

Abstract: Multiple (multi-) die integrated circuit (IC) packages for supporting higher connection density, and related fabrication methods. The multi-die IC package includes split dies that provided in respective die packages that are stacked on top of each other to conserve package area. To support signal routing, including through-package signal routing that extends through the die package, each die package includes vertical interconnects disposed adjacent to their respective dies and coupled to a respective package substrate (and interposer substrate if provided) in the package substrate. In this manner, as an example, through-silicon-vias (TSVs) are not required to be fabricated in the multi-die IC package that extend through the dies themselves to provide signal routing between the respective die packages. In another example, space created between adjacent interposer substrates of stacked die packages, as stood off from each other through the interconnect bumps, provides an area for heat dissipation.

Abstract: A semiconductor device and method is disclosed. Devices shown include a die coupled to an integrated routing layer, wherein the integrated routing layer includes a first width that is wider than the die. Devices shown further included a molded routing layer coupled to the integrated routing layer.

Abstract: An electronic device structure and a method for making an electronic device. As non-limiting examples, various aspects of this disclosure provide a method of manufacturing an electronic device that comprises the utilization of a carrier assisted substrate, and an electronic device manufactured thereby.

Abstract: A semiconductor package includes a substrate, a first semiconductor device disposed over the substrate in an offset position toward an edge of the substrate, and a ring structure disposed over the substrate and surrounding the first semiconductor device. The ring structure includes an overhang portion cantilevered over the edge of the substrate.

Abstract: An integrated circuit package can contain a semiconductor die and provide electrical connections between the semiconductor die and additional electronic components. The integrated circuit package can reduce stress placed on the semiconductor die due to movement of the integrated circuit package due to, for example, temperature changes and/or moisture levels. The integrated circuit package can at least partially mechanically isolate the semiconductor die from the integrated circuit package.

Abstract: A semiconductor device package and a method for manufacturing the semiconductor device package are provided. The semiconductor device package includes a first substrate, a second substrate disposed over the first substrate and having a first surface facing away from the first substrate and a second surface facing the first substrate, a first component disposed on the first surface of the second substrate, a second component disposed on the second surface of the second substrate; and a support member covering the first component.

Abstract: A sensor module includes: a substrate including a first terminal and a second terminal; a first conductive bonding member having a first melting point and a first Young's modulus; a lead bonded to the first terminal by the first conductive bonding member; a second conductive bonding member having a second melting point lower than the first melting point and a second Young's modulus higher than the first Young's modulus; and an inertial sensor bonded to the second terminal by the second conductive bonding member.

Abstract: An embodiment is a structure including a first package including a first die, and a molding compound at least laterally encapsulating the first die, a second package bonded to the first package with a first set of conductive connectors, the second package comprising a second die, and an underfill between the first package and the second package and surrounding the first set of conductive connectors, the underfill having a first portion extending up along a sidewall of the second package, the first portion having a first sidewall, the first sidewall having a curved portion and a planar portion.

Abstract: A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.

Abstract: A method includes coating a release film over a carrier. The carrier includes a first material having a first Coefficient of Thermal Expansion (CTE), and a second material having a second CTE different from the first CTE. The method further includes placing a device die over the release film, encapsulating the device die in an encapsulant, and planarizing the encapsulant until the device die is revealed.

Abstract: A semiconductor device includes a substrate including traces, wherein the traces protrude above a top surface of the substrate; a prefill material over the substrate and between the traces; a die attached over the substrate; and a wafer-level underfill between the prefill material and the die.

Abstract: A semiconductor package is disclosed. The semiconductor package includes a back-side wiring substrate and a front-side redistribution layer which are in parallel, and a connector, a semiconductor chip and an encapsulator which are between the back-side wiring substrate and the front-side redistribution layer. The encapsulator surrounds surfaces of the connector and the semiconductor chip. The back-side wiring substrate includes a core layer, a back-side via plug extending through the core layer, and a back-side redistribution layer on the back-side via plug.

Abstract: In an embodiment, a package includes: an interposer having a first side; a first integrated circuit device attached to the first side of the interposer; a second integrated circuit device attached to the first side of the interposer; an underfill disposed beneath the first integrated circuit device and the second integrated circuit device; and an encapsulant disposed around the first integrated circuit device and the second integrated circuit device, a first portion of the encapsulant extending through the underfill, the first portion of the encapsulant physically disposed between the first integrated circuit device and the second integrated circuit device, the first portion of the encapsulant being planar with edges of the underfill and edges of the first and second integrated circuit devices.

Abstract: A resin applying machine includes a processing chamber, a temperature measuring unit, and a controller. The processing chamber houses therein a holder for holding the wafer, a table that faces the holder, a resin supply unit for supplying a liquid resin to the table, a moving unit for relatively moving the holder and the table closely to each other, and a hardening unit for hardening the liquid resin that has coated the wafer. The temperature measuring unit measures a temperature in the processing chamber. The controller includes a correlation data storage unit for recording therein correlation data with respect to the temperature in the processing chamber and a moved distance by which the holder and the table are relatively moved by the moving unit at the temperature.

Abstract: A frame member for an electron beam lithography device of the present disclosure includes a frame body comprising sapphire or aluminum oxide-based ceramics having an open porosity of 0.2% or less and a conductive film disposed at least on a main surface of an electron gun side of the frame body.

Abstract: Device, package structure and method of forming the same are disclosed. The device includes a die encapsulated by an encapsulant, a conductive structure aside the die, and a dielectric layer overlying the conductive structure. The conductive structure includes a through via in the encapsulant, a redistribution line layer overlying the through via, and a seed layer overlying the redistribution line layer. The dielectric layer includes an opening, wherein the opening exposes a surface of the conductive structure, the opening has a scallop sidewall, and an included angle between a bottom surface of the dielectric layer and a sidewall of the opening is larger than about 60 degrees.

Abstract: Disclosed are apparatuses and methods for fabricating the apparatuses. In one aspect, an apparatus includes a high-power die mounted on a backside of a package substrate. A heat transfer layer is disposed on the backside of the high-power die. A plurality of heat sink interconnects is coupled to the heat transfer layer, where each of the plurality of heat sink interconnects is directly coupled to the heat transfer layer in a vertical orientation.

Abstract: A method for forming a redistribution structure in a semiconductor package and a semiconductor package including the redistribution structure are disclosed. In an embodiment, the method may include encapsulating an integrated circuit die and a through via in a molding compound, the integrated circuit die having a die connector; depositing a first dielectric layer over the molding compound; patterning a first opening through the first dielectric layer exposing the die connector of the integrated circuit die; planarizing the first dielectric layer; depositing a first seed layer over the first dielectric layer and in the first opening; and plating a first conductive via extending through the first dielectric layer on the first seed layer.

Abstract: Disclosed are semiconductor packages and/or methods of fabricating the same. The semiconductor package comprises a package substrate, a first semiconductor chip mounted on the package substrate, a second semiconductor chip mounted on a top surface of the first semiconductor chip, and a first under-fill layer that fills a space between the package substrate and the first semiconductor chip. The package substrate includes a cavity in the package substrate, and a first vent hole that extends from a top surface of the package substrate and is in fluid communication with the cavity. The first under-fill layer extends along the first vent hole to fill the cavity.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, a molding compound and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The at least one semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The molding compound is disposed over the interposer and laterally encapsulates the at least one semiconductor die. The molding compound laterally wraps around the interposer and the molding compound at least physically contacts a portion of the sidewalls of the interposer. The connectors are disposed on the second surface of the interposer, and are electrically connected with the at least one semiconductor die through the interposer.

Abstract: Trenches are opened from a top surface of a production wafer that extend down through scribe areas to a depth that is only partially through a semiconductor substrate. Prior to performing a bumping process, a first handle is attached to the top surface of the production wafer. A back surface of the semiconductor substrate is then thinned to reach the trenches and form a wafer level chip scale package at each integrated circuit location delimited by the trenches. A second handle is then attached to a bottom surface of the thinned semiconductor substrate, and the first handle is removed to expose underbump metallization pads at the top surface. The bumping process is then performed to form a solder ball at each of the exposed underbump metallization pads.

Abstract: The present invention provides a SiP structure and method for a light emitting diode (LED) chip. The packaging structure includes: a heat sink structure, a first chip, a first packaging layer, a second packaging layer, a rewiring layer, an LED chip, a printed circuit board (PCB), and a third packaging layer. In the present invention, chips with a plurality of functions, including the first chip, the LED chip, and the like, are integrated into one packaging structure through fan-out system-level packaging, to meet a plurality of different system functional requirements and improve the performance of the packaging system. By the rewiring layer, a metal connecting pillar, a metal lead wire, and the like, the first chip, the LED chip, and the PCB are electrically connected, to achieve a three-dimensional vertically stacked package thereby effectively reducing the area of a SiP and improving the integration of the packaging system.

Abstract: A package structure includes a first dielectric layer, a first semiconductor device over the first dielectric layer, a first redistribution line in the first dielectric layer, a second dielectric layer over the first semiconductor device, a second semiconductor device over the second dielectric layer, a second redistribution line in the second dielectric layer, a conductive through-via over the first dielectric layer and electrically connected to the first redistribution line, a conductive ball over the conductive through-via and electrically connected to the second redistribution line, and a molding material. The molding material surrounds the first semiconductor device, the conductive through-via, and the conductive ball, wherein a top of the conductive ball is higher than a top of the molding material.

Abstract: A coreless semiconductor package comprises a plurality of horizontal layers of dielectric material. A magnetic inductor is situated at least partly in a first group of the plurality of layers. A plated laser stop is formed to protect the magnetic inductor against subsequent acidic processes. An EMIB is situated above the magnetic inductor within a second group of the plurality of layers. Vias and interconnections are configured within the horizontal layers to connect a die of the EMIB to other circuitry. A first level interconnect is formed on the top side of the package to connect to the interconnections. BGA pockets and BGA pads are formed on the bottom side of the package. In a second embodiment a polymer film is used as additional protection against subsequent acidic processes. The magnetic inductor comprises a plurality of copper traces encapsulated in magnetic material.

Abstract: A USB memory according to a present embodiment is the USB memory capable of data transfer by being connected with a receptacle, and includes a wiring board, a semiconductor chip, a connector, and an adhesive film. The wiring board includes wiring. The semiconductor chip is electrically connected with the wiring. The connector includes a first connection, a second connection, and a holder. The first connection is electrically connected with the semiconductor chip via the wiring. The second connection is electrically connected with the first connection and is connectable with the receptacle. The holder holds the first connection and the second connection. The adhesive film is provided at least between the wiring board and the holder.

Abstract: A package that includes a substrate and an integrated device coupled to the substrate. The substrate includes at least one dielectric layer and a plurality of interconnects comprising a first via interconnect and a first trace interconnect, wherein the first via interconnect is directly coupled to the first trace interconnect. The first via interconnect is coupled to the first trace interconnect without an intervening pad interconnect between the first via interconnect and the first trace interconnect.

Abstract: In one example, a semiconductor device comprises a main substrate having a top side and a bottom side, a first electronic component on the top side of the main substrate, a second electronic component on the bottom side of the main substrate, a substrate structure on the bottom side of the main substrate adjacent to the second electronic component, and an encapsulant structure comprising an encapsulant top portion on the top side of the main substrate and contacting a side of the first electronic component, and an encapsulant bottom portion on the bottom side of the main substrate and contacting a side of the second electronic component and a side of the substrate structure. Other examples and related methods are also disclosed herein.

Abstract: An integrated circuit (IC) chip can include a die with an interconnect conductively coupled to a leadframe, wherein the leadframe forms a portion of a given surface of the IC chip. The IC chip can also include an encapsulating material molded over the die and the leadframe. The encapsulating material can form another surface of the IC chip. The other surface of the IC chip opposes the given surface of the IC chip. The IC chip can further include a vertical wire extending through the encapsulating material in a direction that is substantially perpendicular to the given surface of the IC chip and the vertical wire protruding through the other surface of the IC chip to form a vertical connector for the IC chip. The vertical connector can be coupled to the interconnect on the die.

Abstract: A semiconductor package includes a molding compound, a chip and a conductive pad, wherein the chip is electrically connected to the conductive pad and both are encapsulated in the molding compound. An anchor flange is formed around a top surface of the conductive pad by over plating. When the conductive pad is embedded in the molding compound, the anchor flange engages the molding compound to prevent the conductive pad from separation. Bottoms of a chip and the conductive pad are exposed from the molding compound for electrically soldering to a circuit board.

Abstract: A bonding head for a die bonding apparatus and a die bonding apparatus including the bonding head, the bonding head including a head body; a thermal pressurizer mounted on a lower surface of the head body, the thermal pressurizer being configured to hold and heat at least one die and including a heater having a first heating surface that faces a held surface of the die; and a thermal compensator at an outer region of the die, the thermal compensator extending downwardly from the lower surface of the head body and including at least one thermal compensating block having a second heating surface that emits heat from a heating source therein and that faces a side surface of the die held on the thermal pressurizer.

Abstract: A semiconductor package includes a substrate, a composite seed-barrier layer, a routing via, and a semiconductor die. The substrate has a through hole formed therethrough. The composite seed-barrier layer extends on sidewalls of the through hole and includes a first barrier layer, a seed layer, and a second barrier layer sequentially stacked on the sidewalls of the through hole. The routing via fills the through hole and is separated from the substrate by the composite seed-barrier layer. The semiconductor die is electrically connected to the routing via. Along the sidewalls of the through holes, at a level height corresponding to half of a total thickness of the substrate, the seed layer is present as inclusions of seed material surrounded by barrier material of the first barrier layer and the second barrier layer.

Abstract: An injection mould and an injection moulding method are provided. The injection mould includes a base plate used to place a packaged chip to be injection moulded including a substrate and at least one of the chips fixed on the front substrate by a flip chip process. The substrate has a gas hole. Two or more gas ducts that extend in at least two intersected directions and connect with one another are formed in the base plate. Two ends of each one of gas ducts are open, and at least one of the gas ducts is buried into the base plate. Each one of gas ducts is provided with a gas outlet. When the packaged chip is placed on the base plate, the gas outlet connects with the gas hole of the substrate.

Abstract: A semiconductor package structure and a method of manufacturing the same are provided. The semiconductor package structure includes a first electronic component, a second electronic component, and a reinforcement component. The reinforcement component is disposed above the first electronic component and the second electronic component. The reinforcement component is configured to reduce warpage.

Abstract: A package includes a first package and a second package over and bonded to the first package. The first package includes a first device die, and a first encapsulant encapsulating the first device die therein. The second package includes an Independent Passive Device (IPD) die, and a second encapsulant encapsulating the IPD die therein. The package further includes a power module over and bonded to the second package.

Abstract: A package includes a die and a redistribution structure. The die has an active surface and is wrapped around by an encapsulant. The redistribution structure disposed on the active surface of the die and located above the encapsulant, wherein the redistribution structure comprises a conductive via connected with the die, a routing pattern located above and connected with the conductive via, and a seal ring structure, the seal ring structure includes a first seal ring element and a second seal ring element located above and connected with the first seal ring element, wherein the second seal ring element includes a seed layer sandwiched between the first seal ring element and the second seal ring element, and a top surface of the first seal ring element is substantially coplanar with a top surface of the conductive via.

Abstract: The semiconductor device according to the present invention comprises; a semiconductor element having one surface with a plurality of electrode pads; an electrode structure including a plurality of metal terminals and a sealing resin. The plurality of metal terminals being disposed in a region along a circumference of the one surface. The sealing resin holding the plurality of metal terminals and being disposed on the one surface of the semiconductor element. The electrode structure includes a first surface opposed to the one surface of the semiconductor element, a second surface positioned in an opposite side of the first surface, and a third surface positioned between the first surface and the second surface. Each of the plurality of metal terminals is exposed from the sealing resin in at least a part of the second surface and at least a part of the third surface.

Abstract: An optoelectronic assembly and methods of fabrication thereof are provided. The assembly includes a mold compound; a photonic integrated circuit (PIC) embedded in the mold compound, that has a face exposed from the mold compound in a first plane; an interposer embedded in the mold compound, that has a face exposed from the mold compound in the first plane (i.e., co-planar with the exposed face of the PIC); and an electrical integrated circuit (EIC) coupled to the exposed face of the PIC and the exposed face of the interposer, that establishes bridging electrical connections between the PIC and the interposer.

Abstract: A photoacoustic gas sensor device is proposed for determining a value indicative of a presence or a concentration of a component in a gas. The photoacoustic gas sensor device comprises a substrate, and a measurement cell body arranged on a first side of the substrate. The substrate and the measurement cell body define a measurement cell enclosing a measurement volume. The measurement cell comprises an aperture for a gas to enter the measurement volume. The device further comprises an electromagnetic radiation source for emitting electromagnetic radiation, and a microphone for measuring a sound wave generated by the component in response to an absorption of electromagnetic radiation by the component. The electromagnetic radiation source and the microphone are arranged on the first side of the substrate and in the measurement volume. The microphone has a bottom port facing the substrate, and the measurement volume is communicatively coupled to the bottom port.

Abstract: Multi-chip wafer level packages and methods of forming the same are provided. A multi-chip wafer level package includes a first tier and a second tier. The first tier includes a first redistribution layer structure and at least one chip over the first redistribution layer structure. The second tier includes a second redistribution layer structure and at least two other chips over the second redistribution layer structure. The first tier is bonded to the second tier with the at least one chip being in physical contact with the second redistribution layer structure. The total number of connectors of the at least two other chips is greater than the total number of connectors of the at least one chip.

Abstract: The present disclosure provides a package structure, including a mounting pad having a mounting surface, a semiconductor chip disposed on the mounting surface of the mounting pad, wherein the semiconductor chip includes a first surface, a second surface opposite to the first surface and facing the mounting surface, and a third surface connecting the first surface and the second surface, a first magnetic field shielding, including a first portion proximal to the third surface of the semiconductor chip, wherein the first portion has a first height calculated from the mounting surface to a top surface, and a second portion distal to the semiconductor chip, has a second height calculated from the mounting surface to a position at a surface facing away from the mounting surface, wherein the second height is less than the first height, wherein the second portion has an inclined sidewall.

Abstract: An electronic device has a plurality of integrated circuits fixed to a support between transmitting and receiving antennas. An integrated circuit generates a synchronization signal supplied to the other integrated circuits. Each integrated circuit is formed in a die integrating electronic components and overlaid by a connection region according to the Flip-Chip Ball-Grid-array or embedded Wafer Level BGA. A plurality of solder balls for each integrated circuit is electrically coupled to the electronic components and bonded between the respective integrated circuit and the support. The solder balls are arranged in an array, aligned along a plurality of lines parallel to a direction, wherein the plurality of lines comprises an empty line along which no solder balls are present. A conductive synchronization path is formed on the support and extends along the empty line of at least one integrated circuit, between the solder balls of the latter.

Abstract: A quad flat no lead (“QFN”) package that includes a die having an active side positioned substantially in a first plane and a backside positioned substantially in a second plane parallel to the first plane; a plurality of separate conductive pads each having a first side positioned substantially in the first plane and a second side positioned substantially in the second plane; and mold compound positioned between the first and second planes in voids between the conductive pads and the dies. Also a method of producing a plurality of QFN packages includes forming a strip of plastic material having embedded therein a plurality of dies and a plurality of conductive pads that are wire bonded to the dies and singulating the strip into a plurality of QFN packages by cutting through only the plastic material.

Abstract: A pressure sensor assembly includes an external housing unit; a sensor unit received within the external housing unit, the external housing unit has an external surface including a mounting surface; a sensing element mounted within the sensor unit and including a pressure-sensing surface; a substrate upon which the mounting surface is mounted; an air passage to enable air to impinge on the sensing element; and a filling passage, separate from the air flow passage, for the introduction of an encapsulation material onto the sensor unit, during assembly. The encapsulation material covers at least a part of the external surface of the sensor unit but does not cover the pressure-sensing surface of the sensing element which remains directly exposed to air within the air passage.

Abstract: A chip package structure is provided. The chip package structure includes a substrate. The chip package structure also includes a first chip structure and a second chip structure over the substrate. The chip package structure further includes an anti-warpage bar over a first portion of the first chip structure and over a second portion of the second chip structure. A width of the anti-warpage bar overlapping the second portion of the second chip structure is greater than a width of the anti-warpage bar overlapping the first portion of the first chip structure.

Abstract: Embodiments include a microelectronic device package structure having an inductor within a portion of a substrate, wherein a surface of the inductor is substantially coplanar with a surface of the substrate. One or more thermal interconnect structures are on the surface of the inductor. A conductive feature is embedded within a board, where a surface of the conductive feature is substantially coplanar with a surface of the board. One or more thermal interconnect structures are on the surface of the conductive feature of the board, where the thermal interconnect structures provide a thermal pathway for cooling for the inductor.

Abstract: Embodiments described herein are directed towards enhanced systems and methods for applying underfill (UF) material to fill a gap between electrically coupled semiconductor devices in an integrated device. In some embodiments, uncured UF material may be applied to one edge of the gap, and capillary flow may be employed to distribute the uncured UF material into a first portion of the gap. To fill a second portion of the gap, accelerated motion may be employed. For example, the integrated device may be affixed to a centrifuge, and the centrifuge can be used to spin the integrated device to spread the uncured UF material further into the gap. In some embodiments, the accelerated motion may be employed to distribute the uncured UF material substantially uniformly within the gap. Once the uncured UF material has been spread out, one or more curing processes may be employed to cure the sandwiched UF material.

Abstract: A package structure and a manufacturing method are provided. The package structure includes a first circuit layer, a first dielectric layer, an electrical device and a first conductive structure. The first circuit layer includes a first alignment portion. The first dielectric layer covers the first circuit layer. The electrical device is disposed on the first dielectric layer, and includes an electrical contact aligning with the first alignment portion. The first conductive structure extends through the first alignment portion, and electrically connects the electrical contact and the first alignment portion.