Abstract: A repaired transfer printed system (e.g., micro-transfer printed system) includes a system substrate having two or more contact pads disposed on the system substrate. One or more transfer printed devices (e.g., micro-transfer printed devices) are disposed in contact with the system substrate, each device having two or more connection posts. Each connection post of a replacement device is in physical contact with a contact pad, the connection post forming a second imprint in the physically contacted contact pad. In certain embodiments, a first imprint is in at least one of the physically contacted contact pads and is between the replacement device and the system substrate.

Abstract: A light emitting structure including mixing cups are described. In an embodiment, a light emitting structure includes a light emitting diode (LED) bonded to a substrate, a diffuser layer adjacent the LED, an angular filter directly over the diffuser layer and the LED, and an overcoat layer directly over the angular filter and the LED.

Abstract: The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

Abstract: A method of manufacturing a package, the method comprising the steps of: preparing a resin compact having a recess, and including a pair of leads arranged at a bottom surface of the recess, a first resin body forming a lateral wall of the recess, and a second resin body arranged between the pair of leads; forming a reflective film entirely on at least the bottom surface of the recess and an inner surface of the lateral wall of the recess; and removing the reflective film formed on the pair of leads in the recess in the resin compact on which the reflective film has been formed.

Abstract: In accordance with certain embodiments, phosphor arrangements are formed via adhering phosphors to activated regions on a substrate and transferring them to a different substrate.

Abstract: An elastomeric interface layer (elayer) is formed over multiple light emitting diode (LED) dies by depositing photoresist materials across multiple LED dies, and using the LED dies as a photolithography mask to facilitate formation of the elayer on each LED die. The elayer facilitates adhesive attachment of each LED die with a pick and place head (PPH), allowing the LED dies to be picked up and placed onto a display substrate including control circuits for sub-pixels of an electronic display. In some embodiments, the LED dies are micro-LED (?LED) dies.

Abstract: A lighting apparatus includes an optical member with a diffractive optical element. The optical member is directly fixed on a substrate with plural lighting chips. When the lighting apparatus is applied to a laser diode module, the height and volume of the overall laser diode module are reduced. Consequently, the laser diode module is suitably applied to a small-size device.

Abstract: A method comprising bonding a first substrate to a second substrate. The first substrate includes a layer of one or more pairs of reactive material. The method comprising triggering a reaction between the one or more pairs of reactive material and fragmenting the second substrate.

Abstract: Provided are a light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer and including a first surface and a second surface; first and second contact electrodes each ohmic-contacting the first and second conductivity type semiconductor layers; and first and second electrodes disposed on the first surface of the light emitting structure, in which the first and second electrodes each include sintered metal particles and the first and second electrodes each include inclined sides of which the tangential gradients with respect to sides of vertical cross sections thereof are changing.

Abstract: A method for manufacturing a light emitting device, includes providing a light emitting element including an electrode-formed surface, a substrate surface opposite to the electrode-formed surface, and a light emitting surface connecting the electrode-formed surface and the substrate surface. A bottom mold including a mounting surface having a protrusion and mold recesses provided on both sides of the protrusion to define the protrusion is provided. The light emitting element is mounted on the protrusion such that the light emitting surface faces the protrusion. A covering material is provided on the mounting surface of the bottom mold to fill the mold recesses and to cover an entirety of the light emitting element except for the light emitting surface. The bottom mold with the protrusion is removed to provide a recess in the covering material. A light-transmissive material is provided in the recess of the covering material.

Abstract: A monochromatic chip-scale packaging (CSP) light emitting diode (LED) device with an asymmetrical radiation pattern, including a flip-chip LED semiconductor die, and a reflective structure, is disclosed. A white-light broad-spectrum CSP LED device with asymmetrical radiation pattern is also disclosed by further including a photoluminescent structure in the CSP LED device. The photoluminescent structure covers at least the upper surface of the LED semiconductor die. The reflective structure adjacent to the LED semiconductor die and the photoluminescent structure reflects at least partial light beam emitted from the edge surface of the LED semiconductor die or the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically. A method to fabricate the aforementioned CSP LED device is also disclosed.

Abstract: The present disclosure relates to a III-N based substrate for power electronic devices, comprising a base substrate, a III-N laminate above the base substrate and a buffer layer structure between the base substrate and the III-N laminate. The buffer layer structure comprises at least a first superlattice laminate and a second superlattice laminate above the first superlattice laminate. The first superlattice laminate comprises a repetition of a first superlattice unit which consists of a plurality of first AlGaN layers. The second superlattice laminate comprises a repetition of a second superlattice unit which consists of a plurality of second AlGaN layers. An average aluminum content of the first superlattice laminate is a predetermined difference greater than an average aluminum content of the second superlattice laminate, to improve the vertical breakdown voltage. The present disclosure also relates to a method for manufacturing a III-N based substrate for power electronic devices.

Abstract: A method of manufacturing a light emitting device that includes a plurality of light emitting parts is provided. The method includes providing a base member having a plurality of recesses; mounting at least one light-emitting element in each of the plurality of recesses; disposing a light-transmissive layer continuously covering the plurality of recesses; and removing portions of the light-transmissive layer on the lateral wall between adjacent recesses to expose corresponding portions of the lateral wall, to obtain a plurality of light-transmissive members.

Abstract: A fine interval coating member for a LED display and a coating method using the same are provided. The coating member includes column portions and row portions crossing the column portions, and holes between the column portions and the row portions. The body portion includes a material that is melted at a temperature higher than room temperature and that is cured at the room temperature.

Abstract: There is disclosed a method of preparing a photovoltaic device. In particular, the method comprises integrating epitaxial lift-off solar cells with mini-parabolic concentrator arrays via a printing method. Thus, there is disclosed a method comprising providing a growth substrate; depositing at least one protection layer on the growth substrate; depositing at least one sacrificial layer on the protection layer; depositing at least one photoactive cell on the sacrificial layer; etching a pattern of at least two parallel trenches that extend from the at least one photoactive cell to the sacrificial layer; depositing a metal on the at least one photoactive cell; bonding said metal to a host substrate; and removing the sacrificial layer with one or more etch steps. The host substrate can be a siloxane, which when rolled, can form a stamp used to integrate solar cells into concentrator arrays. There are also disclosed a method of making a growth substrate and the growth substrate made therefrom.

Abstract: A method of manufacturing a light emitting device includes: mounting at least one light emitting element on a support member with a first surface of the light emitting element facing upward; applying an adhesive to the first surface of the light emitting element by holding the support member and dipping the first surface of the light emitting element in the adhesive; and disposing a light-transmissive member on the first surface of the light emitting element via the adhesive.

Abstract: A light-emitting device includes a substrate; a light-emitting element mounted on the substrate; a first light-transmissive member bonded to an upper surface of the light-emitting element via an adhesive; and a second light-transmissive member placed on an upper surface of the first light-transmissive member. In a plan view of the light-emitting device, a peripheral edge of a lower surface of the first light-transmissive member is positioned more inward than a peripheral edge of the upper surface of the light-emitting element. The adhesive extends from the upper surface of the light-emitting element to a lower surface of the second light-transmissive member, the adhesive covers a side surface of the first light-transmissive member, and the adhesive is separated from the substrate.

Abstract: The generally Lambertian LED die emission is modified by an optical structure formed over the LED die that reduces the light emission along a normal axis and enhances the light emission at an angle with respect to the normal axis, producing a certain light emission profile. A phosphor layer is provided overlying the optical structure, such as in a reflective light-mixing chamber. The light emission profile results in more uniform flux from the LED die impinging across the surface of the phosphor. Some of the LED light passes through the phosphor and some of the light is converted to light of a different wavelength. The light emission profile results in more uniform color and temperature across the phosphor. The light emission profile may be created by a lens, a patterned layer over the LED die, a semi-reflective layer over the LED die, an optical sheet, or other technique.

Abstract: Disclosed are an optical member and a display device having the same. The optical member includes a first substrate, a plurality of wavelength conversion parts provided on the first substrate while being spaced apart from each other, and a sealing layer on a top surface of the wavelength conversion parts and at a lateral side of the wavelength conversion parts. Each of the wavelength conversion parts includes a host on the first substrate, and a plurality of wavelength conversion particles in the host.

Abstract: A method of forming an optical device includes forming a waveguide mask on a device precursor. The device precursor includes a waveguide positioned on a base. The method also includes forming a facet mask on the device precursor such that at least a portion of the waveguide mask is between the facet mask and the base. The method also includes removing a portion of the base while the facet mask protects a facet of the waveguide.

Abstract: A trench metal-oxide-semiconductor field effect transistor (MOSFET), in accordance with one embodiment, includes a drain region, a plurality of gate regions disposed above the drain region, a plurality of gate insulator regions each disposed about a periphery of a respective one of the plurality of gate regions, a plurality of source regions disposed in recessed mesas between the plurality of gate insulator regions, a plurality of body regions disposed in recessed mesas between the plurality of gate insulator regions and between the plurality of source regions and the drain region.

Abstract: A semiconductor device including a first lead electrode and a second lead electrode; a semiconductor stack structure disposed on the member, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a plating layer configured to bond the semiconductor stack structure to the member; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.

Abstract: A method for manufacturing a light-emitting device of the present invention includes a step in which solid-state sealing resin (17) containing a phosphor (18) and the solid-state sealing resin (17) containing a phosphor (19) are arranged in recesses in package resin (14) having LED chips placed thereon, are thereafter melted by heating, and, in addition, are cured by heating.

Abstract: The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

Abstract: A manufacturing method includes: attaching a film onto a bonding surface of a wafer; performing laser cutting on the wafer to obtain a plurality of semiconductor light-emitting eutectic chips; attaching light-emitting surfaces of the plurality of eutectic chips on to an expansion film; detaching films from bonding surfaces of the plurality of eutectic chips; performing wafer expansion on the expansion film so that the plurality of eutectic chips have the same intervals as chip loading spaces on a substrate; attaching the expansion film onto a tray, and moving the tray so that positions of the plurality of eutectic chips correspond to that of the chip loading spaces; moving the tray so that the plurality of eutectic chips approach the chip loading spaces on the substrate; and embedding the plurality of eutectic chips into the chip loading spaces so that the plurality of eutectic chips are electrically connected to the substrate.

Abstract: A light-emitting system for emitting light, comprising: (a) at least one light-emitting diode (LED) configured to emit LED light; (b) at least one optical element optically coupled to said at least one LED and configured to direct a first fraction of said LED light along a first optical path and a second fraction of said LED light along a second optical path; and (c) a color modification element disposed along said second optical path and configured to modify the spectrum of said second fraction of said LED light to emit modified light.

Abstract: A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, a patterned sacrificial layer is utilized to form a self-aligned metallization stack and is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes.

Abstract: The present invention provides a method for manufacturing a liquid crystal display device capable of reducing thermal damage to a polarizing plate during thermo-compression bonding, thereby sufficiently preventing the occurrence of defects due to the deformation of the polarizing plate. The method for manufacturing a liquid crystal display device according to the present invention is for thermo-compression bonding a terminal portion of a liquid crystal panel and an external circuit using a pressure bonding device configured of a stage, a heat source, and a buffer member. The manufacturing method includes placing the liquid crystal panel on the stage, and thermo-compression bonding the terminal portion of the liquid crystal panel and the external circuit by heat from the heat source via the buffer member interposed between the heat source and the external circuit.

Abstract: A method for manufacturing a light emitting device, having; a die bonding step of mounting a light emitting element on a board; a phosphor layer formation step of forming a phosphor layer that contains a phosphor by spraying on surfaces of the board and the light emitting element after the die bonding step; and a cover layer formation step of forming a cover layer that contains at least one type of light reflecting material and light blocking material on a surface of the phosphor layer over the board.

Abstract: The embodiments of the present invention disclose a reusable encapsulation layer support plate comprising: a support plate body, the top of the support plate body being arranged with at least one first opening for accommodating an encapsulation layer; a cavity arranged within the support plate body, the cavity being filled with a porous material, and the top of the cavity having at least one second opening; wherein the first opening is connected with and arranged opposite to the second opening, and the top surface of the porous material is parallel and level with the bottom surface of the first opening. The encapsulation layer support plate can avoid crash of OLED substrate, realize effective OLED encapsulation, and can be reused as far as possible. The embodiments of the present invention further disclose a method of encapsulating an OLED substrate using the encapsulation layer support plate.

Abstract: A fluorescent material-containing sealing resin (20) production method of the present invention includes: a kneading step of kneading a powder mixture (24), which has been obtained by mixing a powder of silicone resins (21) and a powder of fluorescent materials (22) together, while melting the powder mixture (24) by heat, so that a kneaded mixture (25) is obtained; and an extruding step of extruding the kneaded mixture (25) in a form of a cord from an output port (37b) of a twin screw extruder (37).

Abstract: The present invention relates to a patterned opto-electrical substrate, comprising a substrate, the substrate has a first patterned structure, a spacer region and a second patterned structure, wherein the second patterned structure is formed on one or both of the first patterned structure and the spacer region, and the first patterned structure is a micron-scale protruding structure or a micron-scale recessing structure, while the second patterned structure is a submicron-scale recessing structure. The present invention also relates to a method for manufacturing the aforementioned patterned opto-electrical substrate and light emitting diodes having the aforementioned patterned opto-electrical substrate.

Abstract: A light-emitting device and a method for manufacturing the light-emitting device is disclosed. Such a light-emitting device comprises a substrate, a plurality of cells disposed on the substrate, and a plurality of semiconductor dice, wherein each of the plurality of cells accommodates at least one of the plurality of dice. Each of the plurality of cells may be filled with an encapsulant, phosphor or a mixture of an encapsulant with phosphor to control light characteristics of the light-emitting device. In an alternative aspect, cells may be filled with an encapsulant, and comprise a transparent cover coated with or filled with phosphors to control light characteristics of the light-emitting device.

Abstract: The present invention relates to a light-emitting diode package. According to the present invention, a light-emitting diode package comprises: a substrate for growth; a passivation layer formed on a surface of one side of the substrate for growth; and a package substrate having a main body portion and a wall portion, wherein the wall portion is formed on the main body portion. At least the space formed among the main body portion, the wall portion and the passivation layer is sealed from the outside.

Abstract: A method of manufacturing a light emitting device includes steps of preparing a light emitting element; preparing a wavelength converting member; and bonding the light emitting element and the wavelength converting member to each other using a surface activated bonding technique.

Abstract: In accordance with certain embodiments, semiconductor dies are embedded within polymeric binder to form, e.g., light-emitting dies and/or composite wafers containing multiple light-emitting dies embedded in a single volume of binder.

Abstract: Various examples of a light emitting diode (LED) package structure and a manufacturing method thereof are described. In one aspect, a LED package structure includes a carrier, a LED chip, a first annular barricade, a second annular barricade and a fluorescent encapsulant. The LED chip is electrically connected to the carrier. The first annular barricade and the second annular barricade are disposed around the LED chip, with the second annular barricade disposed between the LED chip and the first annular barricade. The fluorescent encapsulant is disposed on the carrier and at least covers the LED chip and the second annular barricade. The fluorescent encapsulant includes at least a type of phosphor and at least a type of gel with the phosphor distributed over a surface of the LED chip.

Abstract: A light-emitting diode package includes a light-emitting structure, a first electrode pad and a second electrode pad connected with the light-emitting structure, an insulating pattern layer in contact with a bottom surface of the light-emitting structure and abutting the first and second electrode pads, a substrate including via-holes in contact with a bottom surface of the insulating pattern layer and exposing a portion of the first electrode pad and a portion of the second electrode pad, a first penetrating electrode and a second penetrating electrode that are disposed in the via-holes and respectively connected with the first and second electrode pads, a fluorescent material layer disposed on the light-emitting structure, a glass disposed on and spaced apart from the light-emitting structure with the fluorescent material layer therebetween.

Abstract: A method for producing a packaged component is disclosed. In one embodiment, a lead frame composite has first lead frame parts, second lead frame parts and test contacts, electrically connecting via first electrical connections the first lead frame parts to the other first lead frame parts. A potting body is formed on the lead frame composite thereby mechanically connecting the first lead frame parts to the second lead frame parts and encapsulating the first electrical connections. First semiconductor components are placed on the first lead frame parts after forming the potting body. The first semiconductor components are electrically connected to the second lead frame parts via second electrical connections. The first semiconductor components are electrically tested at the test contacts prior to singulating the lead frame composite and the potting body. The lead frame composite and the potting body are singulated thereby forming the packaged semiconductor components.

Abstract: In accordance with certain embodiments, semiconductor dies are embedded within polymeric binder to form, e.g., freestanding white light-emitting dies and/or composite wafers containing multiple light-emitting dies embedded in a single volume of binder.

Abstract: A lens is formed over one or more light-emitting devices disposed over a substrate. The lens includes a trench that circumferentially surrounds the one or more light-emitting devices. The trench is filled with a phosphor-containing material.

Abstract: A mirror electroluminescent display panel includes an array substrate, a plurality of driving devices, a plurality of electroluminescent devices, and a cover substrate. The driving devices and the electroluminescent devices are disposed on the array substrate. Each electroluminescent device includes a first electrode electrically connected to the corresponding driving device, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer. The cover substrate and the array substrate are disposed oppositely. The cover substrate has a plurality of transmission regions, and a reflection region disposed between adjacent transmission regions, and each of the transmission regions is corresponding to each of the light-emitting layers, respectively.

Abstract: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of HI-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with Complimentary Metal Oxide Semiconductor (CMOS) integrated circuits.

Abstract: A light emitting device is provided with a semiconductor light emitting element and a wavelength conversion portion. The wavelength conversion portion includes an outer peripheral portion between an input surface and an output surface. The outer peripheral portion includes a first inclined part at a side of the input surface and a second inclined part at a side of the output surface. The first inclined part and the second inclined part define a projecting portion that is projected on the outer peripheral portion.

Abstract: An optical film manufacturing method includes forming a master in which a shape corresponding to a plurality of micro-lens patterns is engraved, forming a low refractive index pattern layer in which the plurality of micro-lens patterns are formed, by using the master, forming a high refractive index material layer that has a higher refractive index than a refractive index of the low refractive index pattern layer, and imprinting the low refractive index pattern layer on the high refractive index material layer to form a high refractive index pattern layer, on a first surface of a substrate.

Abstract: A liquid crystal display includes: a substrate; a thin film transistor disposed on the substrate; a pixel electrode disposed on the thin film transistor; and a roof layer facing the pixel electrode, wherein a plurality of microcavities are formed between the pixel electrode and the roof layer, each microcavity includes liquid crystal materials, a partition wall is formed between the microcavities, and the roof layer includes a dry film.

Abstract: A leadframe (610) is formed that simplifies the packaging of light emitting elements and/or eliminates the need for stress-inducing folding after encapsulation. In particular, the folding of the contact tabs (505, 506) for surface mounting is performed prior to the mounting and encapsulation of the light emitting elements on the leadframe. In an example embodiment, the leadframe may be formed so that an array, or matrix, of light emitting elements may be packaged during a single packaging process.

Abstract: A method for manufacturing LED packages includes steps: providing a lead frame including many pairs of first and second electrodes, and first and second tie bars, the first electrodes and second electrodes each including a main body and an extension electrode protruding outward from the main body; forming many molded bodies to engage with the pairs of the first and second electrodes, the first and second main bodies being embedded into the molded bodies, and the first and second extension electrodes being exposed out from a corresponding molded body; preforming many first grooves at a bottom of each molded body; disposing LED dies in the corresponding receiving cavities; and cutting the molded bodies along edges thereof defining the first grooves in a first direction and then along a second direction perpendicular to the first direction to obtain many individual LED packages.

Abstract: The present invention addresses the problem of providing a method for producing a phosphor dispersion liquid, which is not susceptible to settling of phosphor particles, without deteriorating the phosphor particles. In order to solve the above-mentioned problem, the present invention provides a method for producing a phosphor dispersion liquid that contains phosphor particles, laminar clay mineral particles, oxide microparticles and a solvent, said method comprising: a step of preparing a first dispersion liquid that has a viscosity of 50-500 mPa·s by mixing the laminar clay mineral particles, the oxide microparticles, and the solvent; and a step for mixing the phosphor particles into the first dispersion liquid.

Abstract: A liquid crystal display panel is provided. The liquid crystal display panel includes a first substrate comprising a pixel area and a non-pixel area surrounding the pixel area, a thin-film transistor (TFT) disposed on the pixel area of the first substrate and a pixel electrode connected to the TFT, and a plurality of metal wirings disposed on the non-pixel area of the first substrate and one or more dummy patterns disposed adjacent to the metal wirings. The TFT includes a gate electrode, a source electrode, and a drain electrode, and the dummy patterns are formed of a same material as at least one of the gate source, the source electrode, and the drain electrode.