Abstract: A semiconductor package includes a redistribution structure, a supporting layer, a semiconductor device, and a transition waveguide structure. The redistribution structure includes a plurality of connectors. The supporting layer is formed over the redistribution structure and disposed beside and between the plurality of connectors. The semiconductor device is disposed on the supporting layer and bonded to the plurality of connectors, wherein the semiconductor device includes a device waveguide. The transition waveguide structure is disposed on the supporting layer adjacent to the semiconductor device, wherein the transition waveguide structure is optically coupled to the device waveguide.

Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

Abstract: A light emitting diode package is disclosed. The light emitting diode package includes a light emitting diode chip emitting light and a light transmissive member. The light transmissive member covers at least an upper surface of the light emitting diode chip and includes a light transmissive resin and reinforcing fillers. The reinforcing fillers have at least two side surfaces having different lengths and are dispersed in the light transmissive resin.

Abstract: An LED packaging device includes a frame including a bottom wall having a bottom surface and a surrounding wall extending upwardly from the bottom wall, at least one LED chip, a plurality of spaced-apart reflectors and a packaging body. The bottom and surrounding walls cooperatively define a mounting space. The surrounding wall has an internal side surface facing the mounting space and a top surface facing away from the bottom surface. The LED chip is disposed on the bottom surface and is received in the mounting space. Each of the reflectors is disposed on a peripheral region of the bottom surface. The packaging body covers the LED chip and the reflectors, such that the LED chip is sealed inside the mounting space.

Abstract: Embodiments of the present disclosure generally relate to light emitting diodes LEDs and methods of manufacturing the LEDs. The LEDs include a mesa-structure that improves light extraction of the LEDs. Furthermore, the process for forming the LEDs refrains from using physical etching to a quantum well active region of the LEDs to prevent compromising performance at the quantum well sidewall.

Abstract: Wafer-level packaging structure is provided. First chips are bonded to the device wafer. A first encapsulation layer is formed on the device wafer, covering the first chips. The first chip includes: a chip front surface with a formed first pad, facing the device wafer; and a chip back surface opposite to the chip front surface. A first opening is formed in the first encapsulation layer to expose at least one first chip having an exposed chip back surface for receiving a loading signal. A metal layer structure is formed covering the at least one first chip, a bottom and sidewalls of the first opening, and the first encapsulation layer, followed by an alloying treatment on the chip back surface and the metal layer structure to form a back metal layer on the chip back surface.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs), and more particularly LEDs and packaged LED devices with spacer layer arrangements are disclosed. An LED package may include one or more LED chips on a submount with a light-altering material arranged to redirect light in a desired emission direction with increased efficiency. A spacer layer is arranged in the LED package to cover rough surfaces and any gaps that may be formed between adjacent LED chips. When the light-altering material is applied to the LED package, the spacer layer provides a surface that reduces unintended propagation of the light-altering material toward areas of the LED package that would interfere with desired light emissions, for example over LED chips and between LED chips. In various arrangements, the spacer layer may cover one or more surfaces of a lumiphoric material, one or more LED chip surfaces, and portions of an underlying submount.

Abstract: A method of manufacturing a light emitting device includes: providing a wiring substrate on which a light emitting element and a frame body surrounding the light emitting element are disposed; forming a support column member in contact with at least one of an inner peripheral surface and a top surface of a corresponding portion of the frame body, an outermost edge of the support column member being positioned at a same position or inwardly of an outermost edge of the frame body in a top plan view; and forming a light-transmissive member at least partially in contact with the frame body and the support column member with at least a part of the light-transmissive member being positioned above the frame body and the support column member.

Abstract: A semiconductor package includes a redistribution substrate having a first redistribution layer, a semiconductor chip on the redistribution substrate and connected to the first redistribution layer, a vertical connection conductor on the redistribution substrate and electrically connected to the semiconductor chip through the first redistribution layer, a core member having a first through-hole accommodating the semiconductor chip and a second through-hole accommodating the vertical connection conductor, and an encapsulant covering at least a portion of each of the semiconductor chip, the vertical connection conductor, and the core member, the encapsulant filling the first and second through-holes, wherein the vertical connection conductor has a cross-sectional shape with a side surface tapered to have a width of a lower surface thereof is narrower than a width of an upper surface thereof, and the first and second through-holes have a cross-sectional shape tapered in a direction opposite to the vertical conne

Abstract: Embodiments disclosed herein include micro light emitting device (LED) display panels and methods of forming such devices. In an embodiment, a display panel includes a display backplane substrate, a light emitting element on the display backplane, a transparent conductor over the light emitting element, a dielectric layer over the transparent conductor, and a color conversion device over the light emitting element. In an embodiment, the dielectric layer separates the transparent conductor from the color conversion device.

Abstract: A compression bonding apparatus is disclosed. The compression bonding apparatus comprises: a stage configured to support a substrate on which a plurality of light emitting elements are arranged on an adhesive layer having a predetermined viscosity; a support member disposed on the stage and surrounding at least a part of a side surface of the substrate; and a pressing member configured to press the plurality of light emitting elements, wherein the support member is configured to have a height equal to or greater than the height of the substrate.

Abstract: A light source member includes a circuit board, a plurality of light emitting elements on the circuit board, and a reflection plate facing the circuit board. The reflection plate includes a base layer defining a plurality of grooves of the reflection plate, each of the plurality of grooves recessed in a direction towards the circuit board, and a light control pattern which wavelength-converts, absorbs or reflects light from the plurality of light emitting elements, on the base layer.

Abstract: Interposer-less multi-chip module are provided. In one aspect, an interposer-less multi-chip module includes: a substrate; a base film disposed on the substrate; and chips pressed into the base film, wherein top surfaces of the chips are coplanar. For instance, the chips can have varying thicknesses and are pressed into the base film to different depths such that top surfaces of the chips are coplanar. An interconnect layer having back-end-of line (BEOL) metal wiring can be present on the wafer over the chips. Methods of forming an interposer-less multi-chip module are also provided.

Abstract: A semiconductor device includes a substrate with both a compressive layer and an aluminum nitride tensile layer overlying at least a portion of the substrate. The aluminum nitride tensile layer is configured to counteract the compressive layer stress in the device to thereby control an amount of substrate bow in the device. The device includes a temperature-sensitive material supported by the substrate, in which the temperature-sensitive material has a relatively low thermal degradation temperature. The aluminum nitride tensile layer is formed at a temperature below the thermal degradation temperature of the temperature-sensitive material.

Abstract: Provided is a semi-transparent display and a method for producing a semi-transparent display. An SOI wafer is provided, the surface having at least one pixel region and at least one contact region arranged next to the pixel region, the SOI wafer comprising a silicon substrate on the rear side. At least one electromagnetic-radiation-emitting layer is deposited on the front side of the SOI wafer. At least one transparent cover layer is applied above the at least one electromagnetic-radiation-emitting layer. A wiring carrier is fastened to the assembly comprising the SOI wafer, the electromagnetic-radiation-emitting layer and the transparent cover layer. Before fastening of the wiring carrier to the assembly, the silicon substrate is removed from the assembly, producing a residual assembly, and electrically conductive connections are formed between the contact region of the SOI wafer and the wiring carrier from the rear side of the SOI wafer.

Abstract: The present invention provides a backlight module and a display device, wherein the backlight module includes an in-plane hole, and further includes a first light source and a second light source each independently driven and controlled; the light guide is disposed at a wall of the in-plane hole corresponding to the first light source, and is configured to provide light emitted by the first light source to an area of the in-plane hole under a predetermined condition. Compared with the prior art, the embodiments of the present invention solve the problem in the prior art that in-plane holes in a backlight module of a liquid crystal display device have no light source to provide brightness, thereby realizing the in-plane hole of the backlight module with brightness under a predetermined condition, and providing more scene applications of the area of the in-plane hole.

Abstract: Epidermal electronics are sensors with mechanical properties matching human epidermis. Their manufacturing process includes photolithography and dry and wet etching within cleanroom facilities. The high cost of manpower, materials, photo masks, and facilities greatly hinders the commercialization potential of disposable epidermal electronics. In contrast, an embodiment of the invention includes a low cost, high throughput, bench top “cut-and-paste” method to complete the freeform manufacture of epidermal sensor system (ESS) in minutes. This versatile method works for many types of thin metal and polymeric sheets and is compatible with many tattoo adhesives or medical tapes. The resultant ESS is highly multimaterial and multifunctional and may measure ECG, EMG, skin temperature, skin hydration, as well as respiratory rate. Also, a stretchable planar coil made of serpentine ribbons can be used as a wireless strain gauge and/or a near field communication (NFC) antenna. Other embodiments are described herein.

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor layer sequence having a first region of a first conductivity type, a reflection layer, a passivation layer arranged between the semiconductor layer sequence and the reflection layer, a first barrier layer arranged between the first region of the semiconductor layer sequence and the passivation layer and a second barrier layer arranged between the passivation layer and the reflection layer, wherein the first barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the semiconductor layer sequence, and wherein the second barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the reflection layer.

Abstract: An optoelectronic device and a manufacturing method thereof are provided. The optoelectronic device includes a transparent substrate, an optoelectronic chip, electrodes and a wavelength conversion layer. The transparent substrate is provided with a hollow structure and an installation area, the hollow structure penetrates through two opposite surfaces of the transparent substrate and is located at a periphery of the installation area. The optoelectronic chip is arranged in the installation area. The electrodes are arranged on the transparent substrate and electrically connected to the optoelectronic chip; and the wavelength conversion layer is arranged on the two opposite surfaces of the transparent substrate and filled in the hollow structure, wherein the optoelectronic chip is covered by the wavelength conversion layer. The effect of reducing leakage rate of blue light of an optoelectronic device such as a LED packaging structure can be achieved.

Abstract: A phosphor according to the present disclosure has excellent light emission properties in a blue-green region and high color rendering properties. The phosphor is represented by a chemical formula of Lu(3-x-y-z)MgxZnyAl5O12:Cez, in which when z is in a range of 0.01?z?0.03, then 0?x?1.4 and 0?y?1.4, excluding x=0 and y=0; when z is in a range of is 0.03<z?0.06, then y<0.2 and 0.1?x?1.4, or x<0.2 and 0.1?y?1.4, or x=0.2 and y=0.2; when z is in a range of 0.06<z?0.09, then y<0.2 and 0.1?x<1.4, or x<0.2 and 0.1?y<1.4; and when z is in a range of 0.09<z?0.12, then y<0.2 and 0.1?x<0.9, or x<0.2 and 0.1?y<0.9.

Abstract: Epidermal electronics are sensors with mechanical properties matching human epidermis. Their manufacturing process includes photolithography and dry and wet etching within cleanroom facilities. The high cost of manpower, materials, photo masks, and facilities greatly hinders the commercialization potential of disposable epidermal electronics. In contrast, an embodiment of the invention includes a low cost, high throughput, bench top “cut-and-paste” method to complete the freeform manufacture of epidermal sensor system (ESS) in minutes. This versatile method works for many types of thin metal and polymeric sheets and is compatible with many tattoo adhesives or medical tapes. The resultant ESS is highly multimaterial and multifunctional and may measure ECG, EMG, skin temperature, skin hydration, as well as respiratory rate. Also, a stretchable planar coil made of serpentine ribbons can be used as a wireless strain gauge and/or a near field communication (NFC) antenna. Other embodiments are described herein.

Abstract: A method for manufacturing a micro light emitting diode device is provided. A connection layer and a plurality of epitaxial structures are formed on a substrate, wherein the epitaxial structures are separated from each other and relative positions therebetween are fixed via the connection layer. A first pad is formed on each of the epitaxial structures. A plurality of light blocking layers are formed between the epitaxial structures, wherein the light blocking layers and the epitaxial structures are alternately arranged. Each of the epitaxial structures is bonded to a destination substrate after forming the light blocking layers. The substrate is removed to expose the connection layer. A light conversion layer is formed corresponding to each of the epitaxial structures, wherein a width of the light conversion layer is greater than or equal to a distance between any two of the light blocking layers.

Abstract: A method of fabricating ultra-thin chips is provided. The method includes patterning circuit elements onto a substrate such that sections of the substrate are exposed and etching trenches into the sections of the substrate to define pedestals respectively associated with a corresponding circuit element. The method further includes depositing stressor layer material onto the circuit elements and applying handling tape to the stressor layer material. In addition, the method includes at least one of weakening the substrate in a plane defined by base corners of the pedestals and initiating substrate cracking at the base corners of the pedestals to encourage spalling of the pedestals off the substrate.

Abstract: A stabilized fluoride phosphor for light emitting diode (LED) applications includes a particle comprising manganese-activated potassium fluorosilicate and an inorganic coating on each of the particles. The inorganic coating comprises a silicate. A method of making a stabilized fluoride phosphor comprises forming a reaction mixture that includes particles comprising a manganese-activated potassium fluorosilicate; a reactive silicate precursor; a catalyst; a solvent; and water in an amount no greater than about 10 vol. %. The reaction mixture is agitated to suspend the particles therein. As the reactive silicate precursor undergoes hydrolysis and condensation in the reaction mixture, an inorganic coating comprising a silicate is formed on the particles. Thus, a stabilized fluoride phosphor is formed.

Abstract: A thin film transistor (TFT) array substrate and a display panel are provided. The TFT array substrate has a base substrate, an anti-reflection layer, and a gate electrode insulating layer. The TFT array substrate has a light-transmitting region. The anti-reflection layer is disposed on the base substrate of the light-transmitting region. The gate electrode insulating layer is disposed on the anti-reflection layer. Light refractive indexes of the base substrate, the anti-reflection layer, and the gate electrode insulating layer are increasing sequentially.

Abstract: Methods of manufacturing a wavelength-converting pixel array structure, methods of manufacturing a light-emitting device and light-emitting devices are described. A method of manufacturing a wavelength-converting pixel array structure includes forming, in a recess in a wafer, an array of photoresist blocks separated by gaps. A liquid precursor filler material is dispensed into the recess to fill the gaps with the liquid precursor filler material to form a grid. The photoresist blocks are removed to expose an array of cavities defined by walls in the grid. Each of the cavities is filled with a wavelength-converting material to form wavelength-converting pixels of the wavelength-converting pixel array structure.

Abstract: A stabilized fluoride phosphor for light emitting diode (LED) applications includes a particle comprising manganese-activated potassium fluorosilicate and an inorganic coating on each of the particles. The inorganic coating comprises a silicate. A method of making a stabilized fluoride phosphor comprises forming a reaction mixture that includes particles comprising a manganese-activated potassium fluorosilicate; a reactive silicate precursor; a catalyst; a solvent; and water in an amount no greater than about 10 vol. %. The reaction mixture is agitated to suspend the particles therein. As the reactive silicate precursor undergoes hydrolysis and condensation in the reaction mixture, an inorganic coating comprising a silicate is formed on the particles. Thus, a stabilized fluoride phosphor is formed.

Abstract: A light-emitting device 1 comprises a base 30, a nitride semiconductor light-emitting element 10 flip-chip mounted on the base 30, and an amorphous fluororesin sealing the nitride semiconductor light-emitting element 10. The light-emitting device 1 comprises a deformation-prevention layer 60 for preventing a shape change of an amorphous fluororesin by heat treatment after shipment of the light-emitting device 1, and the deformation-prevention layer 60 is formed of a layer in which a thermosetting resin or an ultraviolet curing resin is cured, and the cured layer directly covers the surface of the amorphous fluororesin.

Abstract: Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a micro-LED includes a first component having a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The semiconductor layer stack includes a III-V semiconductor material. The micro-LED also includes a second component having a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component, first contacts of the first component are aligned with and bonded to second contacts of the second component, a surface recombination velocity (SRV) of the micro-LED is less than or equal to 3E4 cm/s, and an e-h diffusion of the micro-LED is less than or equal to 20 cm2/s.

Abstract: A package structure of a light-emitting element includes a shell, a first conductive path, a second conductive path, a light-emitting device, a cover, a first light-transmitting sensing electrode, and a second light-transmitting sensing electrode. The shell has a top surface and a bottom surface, and the top surface is recessed toward the bottom surface to form an accommodating space. Each of the first and second conductive paths extends from the top surface to the bottom surface. The light-emitting device is disposed in the accommodating space. The cover is disposed over the shell. The first and second light-transmitting sensing electrodes are disposed on the same surface of the cover, and a capacitance is formed between the first and second light-transmitting sensing electrodes. The first and second light-transmitting sensing electrodes are electrically connected to the first and second conductive paths, respectively.

Abstract: A method of manufacturing a light emitting device includes: mounting a light emitting element in a package in which a recess is defined, the light emitting element being mounted on a bottom surface defining the recess; forming a first reflecting layer by covering lateral surfaces defining the recess with a first resin containing a first reflecting material; forming a second reflecting layer covering the bottom surface defining the recess, wherein the step of forming the second reflecting layer comprises settling the second reflecting material in the second resin by a centrifugal force so as to form (i) a layer containing a second reflecting material on the bottom surface defining the recess, and (ii) a light-transmissive layer above the layer containing the second reflecting material; and disposing a phosphor-containing layer on the second reflecting layer and the light emitting element, the phosphor-containing layer comprising a third resin that contains a phosphor.

Abstract: Described are light emitting apparatus with self-aligned elements and techniques for manufacturing such light emitting apparatus. In certain embodiments, a light emitting apparatus includes a mesa formed by a plurality of semiconductor layers. The light emitting apparatus further includes an electrical contact on one of the semiconductor layers and a spacer around the electrical contact. The spacer is aligned with respect to the electrical contact, which permits etching around the spacer to define the shape of the mesa in such a way that the mesa is also aligned with respect to the electrical contact. In particular, the electrical contact is substantially centered between opposing sidewalls of the mesa.

Abstract: A method for producing an output coupling element and an output coupling element are disclosed. In an embodiment a method includes producing a suspension having quantum dots in a suspension medium, wherein each quantum dot comprises a core having a semiconductor material, directly applying the suspension onto a surface of an optoelectronic component and/or onto a surface of a carrier and removing the suspension medium for producing the output coupling element, wherein the output coupling element is matrix-free and transparent to radiation of a red range and/or a IR range.

Abstract: A method of fabricating an optoelectronic component within a silicon-on-insulator substrate, the method comprising: providing a silicon-on-insulator (SOI) substrate, the SOI substrate comprising a silicon base layer, a buried oxide (BOX) layer on top of the base layer, and a silicon device layer on top of the BOX layer; etching a first cavity region into the SOI substrate and etching a second cavity region into the SOI substrate, the first cavity region having a first depth and the second cavity region having a second depth, the second depth being greater than the first depth; depositing a multistack epi layer into the first and the second cavity regions simultaneously, the multistack epi layer comprising a first multistack portion comprising a first active region and a second multistack portion comprising a second active region.

Abstract: A phosphor carrier assembly includes a substrate, a thermal or UV activated release adhesive, a layer containing a pixelated phosphor array, and a partially cured or highly viscous adhesive. The phosphor pixels on the carrier are typically all of the same color. In formation of a phosphor converted LED array the phosphor pixels on the carrier assembly are aligned with and placed in contact with corresponding LED pixels in an array of pixelated LED dice. Selected phosphor pixels on the carrier assembly may then be attached to corresponding LED pixels, and released from the substrate, by powering (activating) the corresponding LED pixels to heat the selected phosphor pixel to a temperature that releases the thermal release adhesive and that cures or partially cures the adhesive on the selected phosphor pixels in contact with the corresponding LED pixels.

Abstract: An optical cup which mixes multiple channels of light to form a blended output, the device having discreet zones or channels including a plurality of reflective cavities each having a remote phosphor light converting appliance covering a cluster of LEDs providing a channel of light which is reflected upward. The predetermined blends of phosphors provide a predetermined range of illumination wavelengths in the output.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor stack, a trench formed in the semiconductor stack, a current confinement layer, a first electrode and a second electrode. The semiconductor stack includes a first reflective structure, a second reflective structure, and a cavity region. The cavity is between the first reflective structure and the second reflective structure and has a first surface and a second surface opposite to the first surface. The current confinement layer is in the second reflective structure. The first electrode and the second electrode are on the first surface.

Abstract: A flexible display panel is provided, including a display region and a bending region; a support layer; a substrate disposed on the support layer; a barrier layer disposed on a side of the substrate away from the support layer; a thin film transistor layer disposed on a side of the barrier layer away from the substrate; an organic light emitting layer disposed on a side of the thin film transistor layer away from the barrier layer; and an encapsulation layer disposed on the thin film transistor layer and the organic light emitting layer. In addition, in the bending region, the support layer has at least one groove, and an elastic layer is disposed in the groove. The present disclosure solves the problem of poor recovery ability and poor support ability of the bending region of the display panel.

Abstract: In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

Abstract: A sheet-shaped stretchable structure including stretchable resin sheets laminated together is provided. A conductive layer may be disposed at least at one of several positions. For example, the conductive layer may be disposed between any two adjacent ones of the laminated stretchable resin sheets. The conductive layer may be disposed on a top surface of an uppermost one of the laminated stretchable resin sheets. Further, the conductive layer may be disposed on a bottom surface of a lowermost one of the laminated stretchable resin sheets, and a via hole.

Abstract: The present disclosure discloses an organic light-emitting diode device, a manufacturing method thereof and a display device. The organic light-emitting diode device comprises: a substrate (100); an organic light-emitting diode layer (200) on a side of the substrate (100); and a barrier layer (510) configured to block ultraviolet rays from entering the organic light-emitting diode layer, wherein the barrier layer is on a side of the organic light-emitting diode layer away from the substrate or on a side of the organic light-emitting diode layer close to the substrate. The organic light-emitting diode device can solve the technical problem of short service life due to the influence of ultraviolet rays in the sunlight.

Abstract: The pcLED pixels in a phosphor-converted LED array each comprise an optical element on the light-emitting surface above the phosphor layer. In methods for making such pixelated LED arrays, a thin layer of a sacrificial phosphor carrier substrate is retained as the optical element on the output surface of the phosphor pixels upon completion of the fabrication process.

Abstract: An electronic device, such as, without limitation, a perovskite solar cell or a light emitting diode, includes an assembly including at least one electronic portion or component, and a composite coating layer covering at least part of the assembly including the at least one electronic portion or component. The composite coating layer includes a polymer material, such as, without limitation, PMMA or PMMA-PU, having nanoparticles, such as, without limitation, reduced graphene oxide or SiO2, embedded therein. The electronic device may further include a second coating layer including a second polymer material (such as, without limitation, PMMA or PMMA-PU without nanoparticles) positioned between the coating layer and the assembly.

Abstract: A method of manufacturing a light-emitting device includes: arranging a plurality of light-emitting elements each having an upper surface; disposing a first reflective member between the plurality of light-emitting elements such that the upper surface of each of the plurality of light-emitting elements are exposed and such that lateral surfaces of the light-emitting elements are covered with the first reflective member; disposing a light-transmissive member over the upper surface of each of the plurality of light-emitting elements and the first reflective member; forming a plurality of grooves surrounding one or two or more light-emitting elements by removing a portion of the light-transmissive member and a portion of the first reflective member; disposing a second reflective member to fill the plurality of grooves; and cutting the second reflective member to perform singulation.

Abstract: A semiconductor light emitting device package includes a lead frame structure including a first lead frame and a second lead frame. A resin portion is adjacent to side surfaces of the first lead frame and the second lead frame. A semiconductor light-emitting device is mounted on the first lead frame and the second lead frame, in the form of a flip chip, by eutectic bonding. Each of the first lead frame and the second lead frame has a plurality of first grooves extended in a first direction.

Abstract: The present invention relates to a backlight module and manufacturing method thereof. The backlight module comprises: a soft substrate having an outer surface and a flexible substrate; a reflective layer disposed on the outer surface of the soft substrate; a white quantum dot light emitting layer disposed on the soft substrate; an electrode layer disposed on the white quantum dot light emitting layer and covering the soft substrate.

Abstract: A wavelength conversion member complex includes a wavelength conversion member, a joining material, and a heat dissipation member. The wavelength conversion member includes a support and a phosphor member. The support defines a through-hole extending from an upper surface to a lower surface. The support has a concave portion on the lower surface around the through-hole. The concave portion is spaced apart from the through-hole. The phosphor member is disposed in the through-hole and includes a phosphor. The lower surface of the phosphor member is continuous with the lower surface of the support. The joining material is disposed in the concave portion, and has a lower surface that is flush with the lower surface of the support. The heat dissipation member is disposed under the joining material and the phosphor member, and has an upper surface in contact with the lower surface of the joining material.

Abstract: There may be provided a method for generating a structure, the method may include receiving multiple donor structures that comprise multiple mesas; placing the multiple donor structures on a substrate that lacks a semiconductor layer that covers the entire substrate; and performing a manufacturing process that comprises coupling the multiple mesas to the substrate.

Abstract: A vehicle lamp includes a substrate. A first conductor is positioned on the substrate. A dielectric layer is coupled to the first conductor. A semiconductor layer is configured to emit a first light. A second conductor is coupled to the semiconductor layer. A polymeric layer comprising a photoluminescent element coupled to the second conductor. The photoluminescent element is configured to emit a second light in response to receiving the first light.

Abstract: A monochromatic chip-scale packaging (CSP) light emitting diode (LED) device with an asymmetrical radiation pattern, including a flip-chip LED semiconductor die, and a reflective structure, is disclosed. A white-light broad-spectrum CSP LED device with asymmetrical radiation pattern is also disclosed by further including a photoluminescent structure in the CSP LED device. The photoluminescent structure covers at least the upper surface of the LED semiconductor die. The reflective structure adjacent to the LED semiconductor die and the photoluminescent structure reflects at least partial light beam emitted from the edge surface of the LED semiconductor die or the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically. A method to fabricate the aforementioned CSP LED device is also disclosed.