Abstract: Provided is a nano structure for controlling optical properties of an optical device. The nano structure includes a substrate, a surface modification layer provided on the substrate to modify surface energy of the substrate, and a capping layer provided on the surface modification layer. The capping layer includes a convex portion having a convex profile away from the surface modification layer and a concave portion that is in contact with the surface modification layer.

Abstract: According to one embodiment, a display device includes first wiring layers, a second wiring layer, a first insulating layer, first mounting electrodes, a second mounting electrode, a first light emitting element and a second light emitting element. The second mounting electrode is arranged to surround a first mounting electrode and an other first mounting electrode. The first light emitting element is mounted across the first mounting electrode and the second mounting electrode. The second light emitting element is mounted across the other first mounting electrode and the second mounting electrode. The second mounting electrode is electrically connected to the second wiring layer through a second opening of the first insulating layer, in a non-display area.

Abstract: In an embodiment an optoelectronic component includes a first joining partner including an LED chip with a structured light-emitting surface and a compensation layer applied to the light-emitting surface, wherein the compensation layer has a surface facing away from the light-emitting surface and spaced apart from the light-emitting surface, and wherein the surface forms a first connecting surface, a second joining partner having a second connecting surface, the first and second connecting surfaces being arranged such that they face each other and a bonding layer made of a film of low-melting glass having a layer thickness of not more than 1 ?m, wherein the bonding layer bonds the first and second connecting surfaces together, wherein the structure of the light-emitting surface is embedded in the compensation layer, and wherein the first and second connecting surfaces are smooth such that their surface roughness, expressed as center-line roughness, is less than or equal to 50 nm.

Abstract: A light emitting device includes: a package having an upper surface defining a recess; a light emitting element and a protection device respectively disposed on a bottom surface of the recess; a first reflecting layer covering a lateral surface of the recess; and a second reflecting layer covering the bottom surface of the recess. The first reflecting layer is apart from the light emitting element and covers the protection device. The second reflecting layer contacts with a lower portion of a lateral surface of the light emitting element. An upper surface of the light emitting element and an upper portion of the lateral surface of the light emitting element are exposed from the second reflecting layer.

Abstract: Provided is a light-emitting element lamp capable of increasing a light extraction efficiency and its manufacturing method. The light-emitting element lamp according to the present invention includes: a light-emitting element having a semiconductor layer provided on a substrate; a first lens of spherical segment shape provided by protruding from a surface on the opposite side of the semiconductor layer of the substrate and having a spherical cap that includes a bottom surface consisting of an attaching surface to the surface and a protruding surface from the surface and a radius of curvature R1; and a second lens attached to the side of the light-emitting element and the protruding surface of the first lens, in which the second lens has a concave curve from a peripheral side of the bottom surface of the first lens to the semiconductor layer side on the side of the light-emitting element.

Abstract: A display device may include a substrate, and a display element layer disposed on the substrate and including a light emitting element that emits light in a display direction. The display element layer may include a first contact electrode electrically connected to the light emitting element, a second contact electrode electrically connected to the light emitting element, and a bank pattern having a shape extending in the display direction. At least one of the first contact electrode, the second contact electrode, and the bank pattern may include a transparent conductive polymer.

Abstract: A package comprises a substrate including a first surface, and an upper conductive layer arranged on the first surface, a first light-emitting unit arranged on the upper conductive layer, and comprises a first semiconductor layer, a first substrate, a first light-emitting surface and a first side wall, a second light-emitting unit, which is arranged on the upper conductive layer, and comprises a second light-emitting surface and a second side wall, a light-transmitting layer arranged on the first surface and covers the upper conductive layer, the first light-emitting unit, and the second light-emitting unit, a light-absorbing layer, which is arranged between the substrate and the light-transmitting layer in a continuous configuration of separating the first light-emitting unit and the second light-emitting unit from each other, and a reflective wall arranged on the first side wall, wherein a height of the reflective wall is lower than that of the light-absorbing layer.

Abstract: A replica master mold 10 comprises: a base material layer 11; and a surface shape body 12 formed on the base material layer 11 and having a fine irregular pattern, wherein a softening temperature of the surface shape body 12 is higher than a softening temperature of the base material layer 11.

Abstract: An electronic device is provided. The electronic device includes a first electronic device unit. The first electronic device unit includes a first substrate and a second substrate disposed opposite to the first substrate. The first substrate includes a protruding part which protrudes outward a boundary of the second substrate along a protruding direction perpendicular to a normal direction of the first substrate. The protruding part includes a first side surface having a portion that has been grinded and a portion that has been ungrinded, and a surface roughness of the portion that has been grinded is different from a surface roughness of the portion that has been ungrinded.

Abstract: The lanthanoid compound according to the present invention is a compound represented by the following general formula Ln(R1xCp)2(A)y or the following general formula Sm(R2xCp)2(A)y. In Ln(R1xCp)2(A)y, Ln is Nd, Eu, Dy, Tm, or Yb, R1 is independently Me, Et, nPr, iPr, nBt, sBu, iBu, or tAm, Cp is cyclopentadienyl, A is a linear or cyclic hydrocarbon containing oxygen, sulfur, phosphorus, or nitrogen, x is an integer of 2 to 3, and y is 0 to 2. In Sm(R2xCp)2(A)y, R2 is independently nPr, iPr, nBt, sBu, iBu, or tAm.

Abstract: A light emitting device includes: a base member having a first surface including a first region and a second region; a first frame provided on the base member and surrounding the first region; a light emitting element provided on the base member in the first region; a light-transmissive first member provided inward of the first frame, and covering the light emitting element; an electronic component provided on the base member in the second region and electrically connected with the light emitting element; and a plurality of pin holes arrayed in a first direction and electrically connected with the electronic component, the first direction being orthogonal to a thickness direction of the base member. The electronic component is provided on a side opposite the plurality of pin holes with respect to the light emitting element in a second direction that is orthogonal to the thickness direction and the first direction.

Abstract: The present invention relates to method for producing LED by one step film lamination. The method comprises: laminating two or more LEDs with two or more colored phosphor films by one step film lamination; wherein each of the colored phosphor film comprises each other different colored phosphor composition which has a Maximum tan ?; and the difference of each Maximum tan ? varies within a range of 0-30%. In the present invention, the method for producing a LED may greatly improve production efficiency (i.e., dual and multi-color LEDs in one step) and lower cost of ownership. Further, it may improve uniformity of phosphor dispersion, thereby improve color quality of LEDs.

Abstract: Packaged LEDs with phosphor films, and associated systems and methods are disclosed. A system in accordance with a particular embodiment of the disclosure includes a support member having a support member bond site, an LED carried by the support member and having an LED bond site, and a wire bond electrically connected between the support member bond site and the LED bond site. The system can further include a phosphor film carried by the LED and the support member, the phosphor film being positioned to receive light from the LED at a first wavelength and emit light at a second wavelength different than the first. The phosphor film can be positioned in direct contact with the wire bond at the LED bond site.

Abstract: A light emitting device includes a LED having a light emitting first surface and a light emitting second surface that define a corner. A support layer is disposed to receive light emitted by the light emitting second surface and is disposed adjacent the corner. A luminophoric medium layer at least partially covers the light emitting first surface and the light emitting second surface where the luminophoric medium layer is at least partially supported by the support layer to prevent a narrowing of the luminophoric medium layer.

Abstract: A package includes a substrate, a first light-emitting unit, a second light-emitting unit, a light-transmitting layer, and a light-absorbing layer. The substrate has a first surface and an upper conductive layer on the first surface. The first light-emitting unit and the second light-emitting unit are disposed on the upper conductive layer. The first light-emitting unit has a first light-emitting surface and a first side wall. The second light-emitting unit has a second light-emitting surface and a second side wall. The light-transmitting layer is disposed on the first surface and covers the upper conductive layer, the first light-emitting unit, and the second light-emitting unit. The light-absorbing layer is disposed between the substrate and the light-transmitting layer, covers the upper conductive layer, the first side wall, and the second side wall, and exposes the first light-emitting surface and the second light-emitting surface.

Abstract: A light emitting device comprises a semiconductor diode structure configured to emit light, a substrate that is transparent to light emitted by the semiconductor diode structure, and a reflective nanostructured layer. The reflective nanostructured layer may be disposed on or adjacent to a bottom surface of the substrate and configured to reflect toward and through a side wall surface of the substrate light that is emitted by the semiconductor structure and incident on the reflective nanostructured layer at angles at or near perpendicular incidence. Alternatively, the reflective nanostructured layer may be disposed on or adjacent to at least one sidewall surface of the substrate and configured to reflect toward and through the bottom surface of the substrate light that is emitted by the semiconductor structure and incident on the reflective nanostructured layer at angles at or near perpendicular incidence.

Abstract: A micro LED display device includes a micro light emitting unit, a conductive structure and a substrate. The micro light emitting unit includes a plurality of micro light emitting elements, and each of the micro light emitting elements includes a semiconductor structure and an electrode structure. The semiconductor structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The electrode structure includes a first type electrode and a second type electrode. The conductive structure includes a first type conductive layer and a second type conductive layer. The first type conductive layer is electrically connected to the first type electrode, and the second type conductive layer is electrically connected to the second type electrode. The micro light emitting unit is disposed on the substrate, and the electrode structure is disposed toward the substrate and includes a gap therebetween.

Abstract: An optical module includes: a carrier; an optical element disposed on the upper side of the carrier; and a housing disposed on the upper side of the carrier, the housing defining an aperture exposing at least a portion of the optical element, an outer sidewall of the housing including at least one singulation portion disposed on the upper side of the carrier, wherein the singulation portion of the housing is a first portion of the housing, and wherein the housing further includes a second portion and a surface of the singulation portion of the housing is rougher than a surface of the second portion of the housing.

Abstract: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.

Abstract: A method for manufacturing a linear light source includes: providing a base having a first surface defining recesses in an array in a first direction, and a second surface having a curved contour in a cross section orthogonal to the first direction and a straight contour in a cross section parallel to the first direction; providing light sources each having a top surface and a bottom surface including electrodes; placing the light sources at positions overlapping the recesses in a plan view with the top surface of the light source facing a bottom surface of the recess; placing a first reflective member to cover the light sources and the first surface so that the electrodes of the light sources are exposed; placing a second reflective member on the second surface; and cutting the base along the first direction to define a third surface continuous with the first and second surfaces.

Abstract: A light emitting device includes: a package in which a recess is defined; a light emitting element mounted on a bottom surface defining the recess; a first reflecting layer covering lateral surfaces defining the recess; and a second reflecting layer covering the bottom surface defining the recess, wherein the second reflecting layer is in contact with the first reflecting layer, wherein at least a portion of lateral surfaces of the light emitting element is exposed from the second reflecting layer.

Abstract: The disclosure discloses a method for manufacturing light-emitting diode (LED) chips. The manufacturing method includes: providing a plurality of LED elements; randomly mixing the plurality of LED elements; performing a mesa process on the plurality of LED elements; and forming at least one pair of electrodes on the plurality of LED elements. An electronic device includes the LED chips.

Abstract: A method of manufacturing a light emitting device includes: providing a first intermediate body including a substrate, first bonding members, a second bonding member, a light emitting element, a protecting element, a light transmissive member bonded to the light emitting element, and a light-shielding frame surrounding the light transmissive member in a top view, a portion of an outer periphery of the light-shielding frame being located above the protecting element such that at least a portion of the protecting element is exposed from the light-shielding frame in the top view; disposing a first resin between the light emitting element and the substrate by applying the first resin on the substrate in a region outside of the portion of the protecting element such that the first resin moves toward the light emitting element along the protecting element; and curing the first resin to obtain a first cover member.

Abstract: A light-emitting device includes: a base member including: a first lead, a second lead, and a securing member securing the first and second leads; a light-emitting element mounted on an upper surface of the base member; a frame, a part of which is disposed on the upper surface of the base member to surround the light-emitting element; a first member covering at least a portion of an upper surface of the securing member that is exposed at an outer peripheral side of the frame in a top view, the first member being arranged intermittently under the frame and containing a reflective material; and a second member covering the light-emitting element, the frame, and the first member. The frame has a first region on which the first member is arranged and a second region on which the first member is not arranged, the first and second regions having different heights.

Abstract: A light-emitting device includes light-emitting elements each having a light-extracting surface, light-transmissive members and a covering member, The light-transmissive members each has an upper surface and a lower surface facing the light-extracting surface of at least one of the light-emitting elements. The covering member integrally covers lateral surfaces of the light-emitting elements and lateral surfaces of the light-transmissive members such that a pair of electrodes of the light-emitting elements are exposed from the covering member at a lower surface of the covering member. At a lower surface of the light-emitting device, the light-emitting elements are arranged in a plurality of columns and a plurality of rows, an alignment direction of the electrodes in one of the light-emitting elements is rotated by 90° in a prescribed. direction from an alignment direction of the electrodes in an adjacent one of the light-emitting elements in one of a column direction and a row direction.

Abstract: A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.

Abstract: There is provided a light emitting diode, LED, filament lamp (100) which has a longitudinal axis (LA) and provides LED filament lamp light (101). The LED filament lamp (100) comprises a LED filament (102) which comprises a light transmissive, elongated substrate (103). Said substrate (103) has a first main surface (105) at a first side (105) and a second main surface (106) at a second side (106?) opposite to the first side (105?). A plurality of LEDs (104) is mounted only onto said first main surface (105) and configured to emit LED light (107). An encapsulant (108, 114) covers the plurality of LEDs (104) and at least part of said first main surface (105).

Abstract: A light emitting device includes: a substrate; a plurality of light emitting elements mounted on the substrate; a covering member disposed on the substrate between adjacent ones of the light emitting elements such that an upper surface of the covering member is substantially coplanar with upper surfaces of the light emitting elements, wherein the covering member is a molded body containing an inorganic material powder and a binder; and a light transmissive member disposed on or above the plurality of light emitting elements.

Abstract: A light-emitting device efficiently performs wavelength conversion and includes a light-emitting element having a light-emitting surface, a wavelength conversion member having an incident surface that is larger than the light-emitting surface of the light-emitting element, a light-transmissive member that includes a first portion disposed across a lateral surface of the light-emitting element and the incident surface of the wavelength conversion member, and a light-reflective member disposed to cover the lateral surface of the light-emitting element while being in contact with the first portion of the light-transmissive member. The incident surface of the wavelength conversion member faces the light-emitting surface of the light-emitting element and has an outer periphery located outward of an outer periphery of the light-emitting surface.

Abstract: A semiconductor package includes a redistribution structure, a supporting layer, a semiconductor device, and a transition waveguide structure. The redistribution structure includes a plurality of connectors. The supporting layer is formed over the redistribution structure and disposed beside and between the plurality of connectors. The semiconductor device is disposed on the supporting layer and bonded to the plurality of connectors, wherein the semiconductor device includes a device waveguide. The transition waveguide structure is disposed on the supporting layer adjacent to the semiconductor device, wherein the transition waveguide structure is optically coupled to the device waveguide.

Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

Abstract: A light emitting diode package is disclosed. The light emitting diode package includes a light emitting diode chip emitting light and a light transmissive member. The light transmissive member covers at least an upper surface of the light emitting diode chip and includes a light transmissive resin and reinforcing fillers. The reinforcing fillers have at least two side surfaces having different lengths and are dispersed in the light transmissive resin.

Abstract: An LED packaging device includes a frame including a bottom wall having a bottom surface and a surrounding wall extending upwardly from the bottom wall, at least one LED chip, a plurality of spaced-apart reflectors and a packaging body. The bottom and surrounding walls cooperatively define a mounting space. The surrounding wall has an internal side surface facing the mounting space and a top surface facing away from the bottom surface. The LED chip is disposed on the bottom surface and is received in the mounting space. Each of the reflectors is disposed on a peripheral region of the bottom surface. The packaging body covers the LED chip and the reflectors, such that the LED chip is sealed inside the mounting space.

Abstract: Wafer-level packaging structure is provided. First chips are bonded to the device wafer. A first encapsulation layer is formed on the device wafer, covering the first chips. The first chip includes: a chip front surface with a formed first pad, facing the device wafer; and a chip back surface opposite to the chip front surface. A first opening is formed in the first encapsulation layer to expose at least one first chip having an exposed chip back surface for receiving a loading signal. A metal layer structure is formed covering the at least one first chip, a bottom and sidewalls of the first opening, and the first encapsulation layer, followed by an alloying treatment on the chip back surface and the metal layer structure to form a back metal layer on the chip back surface.

Abstract: Embodiments of the present disclosure generally relate to light emitting diodes LEDs and methods of manufacturing the LEDs. The LEDs include a mesa-structure that improves light extraction of the LEDs. Furthermore, the process for forming the LEDs refrains from using physical etching to a quantum well active region of the LEDs to prevent compromising performance at the quantum well sidewall.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs), and more particularly LEDs and packaged LED devices with spacer layer arrangements are disclosed. An LED package may include one or more LED chips on a submount with a light-altering material arranged to redirect light in a desired emission direction with increased efficiency. A spacer layer is arranged in the LED package to cover rough surfaces and any gaps that may be formed between adjacent LED chips. When the light-altering material is applied to the LED package, the spacer layer provides a surface that reduces unintended propagation of the light-altering material toward areas of the LED package that would interfere with desired light emissions, for example over LED chips and between LED chips. In various arrangements, the spacer layer may cover one or more surfaces of a lumiphoric material, one or more LED chip surfaces, and portions of an underlying submount.

Abstract: A method of manufacturing a light emitting device includes: providing a wiring substrate on which a light emitting element and a frame body surrounding the light emitting element are disposed; forming a support column member in contact with at least one of an inner peripheral surface and a top surface of a corresponding portion of the frame body, an outermost edge of the support column member being positioned at a same position or inwardly of an outermost edge of the frame body in a top plan view; and forming a light-transmissive member at least partially in contact with the frame body and the support column member with at least a part of the light-transmissive member being positioned above the frame body and the support column member.

Abstract: A semiconductor package includes a redistribution substrate having a first redistribution layer, a semiconductor chip on the redistribution substrate and connected to the first redistribution layer, a vertical connection conductor on the redistribution substrate and electrically connected to the semiconductor chip through the first redistribution layer, a core member having a first through-hole accommodating the semiconductor chip and a second through-hole accommodating the vertical connection conductor, and an encapsulant covering at least a portion of each of the semiconductor chip, the vertical connection conductor, and the core member, the encapsulant filling the first and second through-holes, wherein the vertical connection conductor has a cross-sectional shape with a side surface tapered to have a width of a lower surface thereof is narrower than a width of an upper surface thereof, and the first and second through-holes have a cross-sectional shape tapered in a direction opposite to the vertical conne

Abstract: Embodiments disclosed herein include micro light emitting device (LED) display panels and methods of forming such devices. In an embodiment, a display panel includes a display backplane substrate, a light emitting element on the display backplane, a transparent conductor over the light emitting element, a dielectric layer over the transparent conductor, and a color conversion device over the light emitting element. In an embodiment, the dielectric layer separates the transparent conductor from the color conversion device.

Abstract: A compression bonding apparatus is disclosed. The compression bonding apparatus comprises: a stage configured to support a substrate on which a plurality of light emitting elements are arranged on an adhesive layer having a predetermined viscosity; a support member disposed on the stage and surrounding at least a part of a side surface of the substrate; and a pressing member configured to press the plurality of light emitting elements, wherein the support member is configured to have a height equal to or greater than the height of the substrate.

Abstract: A light source member includes a circuit board, a plurality of light emitting elements on the circuit board, and a reflection plate facing the circuit board. The reflection plate includes a base layer defining a plurality of grooves of the reflection plate, each of the plurality of grooves recessed in a direction towards the circuit board, and a light control pattern which wavelength-converts, absorbs or reflects light from the plurality of light emitting elements, on the base layer.

Abstract: Interposer-less multi-chip module are provided. In one aspect, an interposer-less multi-chip module includes: a substrate; a base film disposed on the substrate; and chips pressed into the base film, wherein top surfaces of the chips are coplanar. For instance, the chips can have varying thicknesses and are pressed into the base film to different depths such that top surfaces of the chips are coplanar. An interconnect layer having back-end-of line (BEOL) metal wiring can be present on the wafer over the chips. Methods of forming an interposer-less multi-chip module are also provided.

Abstract: A semiconductor device includes a substrate with both a compressive layer and an aluminum nitride tensile layer overlying at least a portion of the substrate. The aluminum nitride tensile layer is configured to counteract the compressive layer stress in the device to thereby control an amount of substrate bow in the device. The device includes a temperature-sensitive material supported by the substrate, in which the temperature-sensitive material has a relatively low thermal degradation temperature. The aluminum nitride tensile layer is formed at a temperature below the thermal degradation temperature of the temperature-sensitive material.

Abstract: Provided is a semi-transparent display and a method for producing a semi-transparent display. An SOI wafer is provided, the surface having at least one pixel region and at least one contact region arranged next to the pixel region, the SOI wafer comprising a silicon substrate on the rear side. At least one electromagnetic-radiation-emitting layer is deposited on the front side of the SOI wafer. At least one transparent cover layer is applied above the at least one electromagnetic-radiation-emitting layer. A wiring carrier is fastened to the assembly comprising the SOI wafer, the electromagnetic-radiation-emitting layer and the transparent cover layer. Before fastening of the wiring carrier to the assembly, the silicon substrate is removed from the assembly, producing a residual assembly, and electrically conductive connections are formed between the contact region of the SOI wafer and the wiring carrier from the rear side of the SOI wafer.

Abstract: The present invention provides a backlight module and a display device, wherein the backlight module includes an in-plane hole, and further includes a first light source and a second light source each independently driven and controlled; the light guide is disposed at a wall of the in-plane hole corresponding to the first light source, and is configured to provide light emitted by the first light source to an area of the in-plane hole under a predetermined condition. Compared with the prior art, the embodiments of the present invention solve the problem in the prior art that in-plane holes in a backlight module of a liquid crystal display device have no light source to provide brightness, thereby realizing the in-plane hole of the backlight module with brightness under a predetermined condition, and providing more scene applications of the area of the in-plane hole.

Abstract: Epidermal electronics are sensors with mechanical properties matching human epidermis. Their manufacturing process includes photolithography and dry and wet etching within cleanroom facilities. The high cost of manpower, materials, photo masks, and facilities greatly hinders the commercialization potential of disposable epidermal electronics. In contrast, an embodiment of the invention includes a low cost, high throughput, bench top “cut-and-paste” method to complete the freeform manufacture of epidermal sensor system (ESS) in minutes. This versatile method works for many types of thin metal and polymeric sheets and is compatible with many tattoo adhesives or medical tapes. The resultant ESS is highly multimaterial and multifunctional and may measure ECG, EMG, skin temperature, skin hydration, as well as respiratory rate. Also, a stretchable planar coil made of serpentine ribbons can be used as a wireless strain gauge and/or a near field communication (NFC) antenna. Other embodiments are described herein.

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor layer sequence having a first region of a first conductivity type, a reflection layer, a passivation layer arranged between the semiconductor layer sequence and the reflection layer, a first barrier layer arranged between the first region of the semiconductor layer sequence and the passivation layer and a second barrier layer arranged between the passivation layer and the reflection layer, wherein the first barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the semiconductor layer sequence, and wherein the second barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the reflection layer.

Abstract: An optoelectronic device and a manufacturing method thereof are provided. The optoelectronic device includes a transparent substrate, an optoelectronic chip, electrodes and a wavelength conversion layer. The transparent substrate is provided with a hollow structure and an installation area, the hollow structure penetrates through two opposite surfaces of the transparent substrate and is located at a periphery of the installation area. The optoelectronic chip is arranged in the installation area. The electrodes are arranged on the transparent substrate and electrically connected to the optoelectronic chip; and the wavelength conversion layer is arranged on the two opposite surfaces of the transparent substrate and filled in the hollow structure, wherein the optoelectronic chip is covered by the wavelength conversion layer. The effect of reducing leakage rate of blue light of an optoelectronic device such as a LED packaging structure can be achieved.

Abstract: A phosphor according to the present disclosure has excellent light emission properties in a blue-green region and high color rendering properties. The phosphor is represented by a chemical formula of Lu(3-x-y-z)MgxZnyAl5O12:Cez, in which when z is in a range of 0.01?z?0.03, then 0?x?1.4 and 0?y?1.4, excluding x=0 and y=0; when z is in a range of is 0.03<z?0.06, then y<0.2 and 0.1?x?1.4, or x<0.2 and 0.1?y?1.4, or x=0.2 and y=0.2; when z is in a range of 0.06<z?0.09, then y<0.2 and 0.1?x<1.4, or x<0.2 and 0.1?y<1.4; and when z is in a range of 0.09<z?0.12, then y<0.2 and 0.1?x<0.9, or x<0.2 and 0.1?y<0.9.

Abstract: Epidermal electronics are sensors with mechanical properties matching human epidermis. Their manufacturing process includes photolithography and dry and wet etching within cleanroom facilities. The high cost of manpower, materials, photo masks, and facilities greatly hinders the commercialization potential of disposable epidermal electronics. In contrast, an embodiment of the invention includes a low cost, high throughput, bench top “cut-and-paste” method to complete the freeform manufacture of epidermal sensor system (ESS) in minutes. This versatile method works for many types of thin metal and polymeric sheets and is compatible with many tattoo adhesives or medical tapes. The resultant ESS is highly multimaterial and multifunctional and may measure ECG, EMG, skin temperature, skin hydration, as well as respiratory rate. Also, a stretchable planar coil made of serpentine ribbons can be used as a wireless strain gauge and/or a near field communication (NFC) antenna. Other embodiments are described herein.