Abstract: A manufacturing method includes: attaching a film onto a bonding surface of a wafer; performing laser cutting on the wafer to obtain a plurality of semiconductor light-emitting eutectic chips; attaching light-emitting surfaces of the plurality of eutectic chips on to an expansion film; detaching films from bonding surfaces of the plurality of eutectic chips; performing wafer expansion on the expansion film so that the plurality of eutectic chips have the same intervals as chip loading spaces on a substrate; attaching the expansion film onto a tray, and moving the tray so that positions of the plurality of eutectic chips correspond to that of the chip loading spaces; moving the tray so that the plurality of eutectic chips approach the chip loading spaces on the substrate; and embedding the plurality of eutectic chips into the chip loading spaces so that the plurality of eutectic chips are electrically connected to the substrate.

Abstract: A light-emitting system for emitting light, comprising: (a) at least one light-emitting diode (LED) configured to emit LED light; (b) at least one optical element optically coupled to said at least one LED and configured to direct a first fraction of said LED light along a first optical path and a second fraction of said LED light along a second optical path; and (c) a color modification element disposed along said second optical path and configured to modify the spectrum of said second fraction of said LED light to emit modified light.

Abstract: A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, a patterned sacrificial layer is utilized to form a self-aligned metallization stack and is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes.

Abstract: The present invention provides a method for manufacturing a liquid crystal display device capable of reducing thermal damage to a polarizing plate during thermo-compression bonding, thereby sufficiently preventing the occurrence of defects due to the deformation of the polarizing plate. The method for manufacturing a liquid crystal display device according to the present invention is for thermo-compression bonding a terminal portion of a liquid crystal panel and an external circuit using a pressure bonding device configured of a stage, a heat source, and a buffer member. The manufacturing method includes placing the liquid crystal panel on the stage, and thermo-compression bonding the terminal portion of the liquid crystal panel and the external circuit by heat from the heat source via the buffer member interposed between the heat source and the external circuit.

Abstract: A method for manufacturing a light emitting device, having; a die bonding step of mounting a light emitting element on a board; a phosphor layer formation step of forming a phosphor layer that contains a phosphor by spraying on surfaces of the board and the light emitting element after the die bonding step; and a cover layer formation step of forming a cover layer that contains at least one type of light reflecting material and light blocking material on a surface of the phosphor layer over the board.

Abstract: The embodiments of the present invention disclose a reusable encapsulation layer support plate comprising: a support plate body, the top of the support plate body being arranged with at least one first opening for accommodating an encapsulation layer; a cavity arranged within the support plate body, the cavity being filled with a porous material, and the top of the cavity having at least one second opening; wherein the first opening is connected with and arranged opposite to the second opening, and the top surface of the porous material is parallel and level with the bottom surface of the first opening. The encapsulation layer support plate can avoid crash of OLED substrate, realize effective OLED encapsulation, and can be reused as far as possible. The embodiments of the present invention further disclose a method of encapsulating an OLED substrate using the encapsulation layer support plate.

Abstract: A fluorescent material-containing sealing resin (20) production method of the present invention includes: a kneading step of kneading a powder mixture (24), which has been obtained by mixing a powder of silicone resins (21) and a powder of fluorescent materials (22) together, while melting the powder mixture (24) by heat, so that a kneaded mixture (25) is obtained; and an extruding step of extruding the kneaded mixture (25) in a form of a cord from an output port (37b) of a twin screw extruder (37).

Abstract: The present invention relates to a patterned opto-electrical substrate, comprising a substrate, the substrate has a first patterned structure, a spacer region and a second patterned structure, wherein the second patterned structure is formed on one or both of the first patterned structure and the spacer region, and the first patterned structure is a micron-scale protruding structure or a micron-scale recessing structure, while the second patterned structure is a submicron-scale recessing structure. The present invention also relates to a method for manufacturing the aforementioned patterned opto-electrical substrate and light emitting diodes having the aforementioned patterned opto-electrical substrate.

Abstract: A light-emitting device and a method for manufacturing the light-emitting device is disclosed. Such a light-emitting device comprises a substrate, a plurality of cells disposed on the substrate, and a plurality of semiconductor dice, wherein each of the plurality of cells accommodates at least one of the plurality of dice. Each of the plurality of cells may be filled with an encapsulant, phosphor or a mixture of an encapsulant with phosphor to control light characteristics of the light-emitting device. In an alternative aspect, cells may be filled with an encapsulant, and comprise a transparent cover coated with or filled with phosphors to control light characteristics of the light-emitting device.

Abstract: The present invention relates to a light-emitting diode package. According to the present invention, a light-emitting diode package comprises: a substrate for growth; a passivation layer formed on a surface of one side of the substrate for growth; and a package substrate having a main body portion and a wall portion, wherein the wall portion is formed on the main body portion. At least the space formed among the main body portion, the wall portion and the passivation layer is sealed from the outside.

Abstract: A method of manufacturing a light emitting device includes steps of preparing a light emitting element; preparing a wavelength converting member; and bonding the light emitting element and the wavelength converting member to each other using a surface activated bonding technique.

Abstract: In accordance with certain embodiments, semiconductor dies are embedded within polymeric binder to form, e.g., light-emitting dies and/or composite wafers containing multiple light-emitting dies embedded in a single volume of binder.

Abstract: Various examples of a light emitting diode (LED) package structure and a manufacturing method thereof are described. In one aspect, a LED package structure includes a carrier, a LED chip, a first annular barricade, a second annular barricade and a fluorescent encapsulant. The LED chip is electrically connected to the carrier. The first annular barricade and the second annular barricade are disposed around the LED chip, with the second annular barricade disposed between the LED chip and the first annular barricade. The fluorescent encapsulant is disposed on the carrier and at least covers the LED chip and the second annular barricade. The fluorescent encapsulant includes at least a type of phosphor and at least a type of gel with the phosphor distributed over a surface of the LED chip.

Abstract: A light-emitting diode package includes a light-emitting structure, a first electrode pad and a second electrode pad connected with the light-emitting structure, an insulating pattern layer in contact with a bottom surface of the light-emitting structure and abutting the first and second electrode pads, a substrate including via-holes in contact with a bottom surface of the insulating pattern layer and exposing a portion of the first electrode pad and a portion of the second electrode pad, a first penetrating electrode and a second penetrating electrode that are disposed in the via-holes and respectively connected with the first and second electrode pads, a fluorescent material layer disposed on the light-emitting structure, a glass disposed on and spaced apart from the light-emitting structure with the fluorescent material layer therebetween.

Abstract: A method for producing a packaged component is disclosed. In one embodiment, a lead frame composite has first lead frame parts, second lead frame parts and test contacts, electrically connecting via first electrical connections the first lead frame parts to the other first lead frame parts. A potting body is formed on the lead frame composite thereby mechanically connecting the first lead frame parts to the second lead frame parts and encapsulating the first electrical connections. First semiconductor components are placed on the first lead frame parts after forming the potting body. The first semiconductor components are electrically connected to the second lead frame parts via second electrical connections. The first semiconductor components are electrically tested at the test contacts prior to singulating the lead frame composite and the potting body. The lead frame composite and the potting body are singulated thereby forming the packaged semiconductor components.

Abstract: In accordance with certain embodiments, semiconductor dies are embedded within polymeric binder to form, e.g., freestanding white light-emitting dies and/or composite wafers containing multiple light-emitting dies embedded in a single volume of binder.

Abstract: A lens is formed over one or more light-emitting devices disposed over a substrate. The lens includes a trench that circumferentially surrounds the one or more light-emitting devices. The trench is filled with a phosphor-containing material.

Abstract: A mirror electroluminescent display panel includes an array substrate, a plurality of driving devices, a plurality of electroluminescent devices, and a cover substrate. The driving devices and the electroluminescent devices are disposed on the array substrate. Each electroluminescent device includes a first electrode electrically connected to the corresponding driving device, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer. The cover substrate and the array substrate are disposed oppositely. The cover substrate has a plurality of transmission regions, and a reflection region disposed between adjacent transmission regions, and each of the transmission regions is corresponding to each of the light-emitting layers, respectively.

Abstract: A light emitting device is provided with a semiconductor light emitting element and a wavelength conversion portion. The wavelength conversion portion includes an outer peripheral portion between an input surface and an output surface. The outer peripheral portion includes a first inclined part at a side of the input surface and a second inclined part at a side of the output surface. The first inclined part and the second inclined part define a projecting portion that is projected on the outer peripheral portion.

Abstract: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of HI-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with Complimentary Metal Oxide Semiconductor (CMOS) integrated circuits.

Abstract: A liquid crystal display includes: a substrate; a thin film transistor disposed on the substrate; a pixel electrode disposed on the thin film transistor; and a roof layer facing the pixel electrode, wherein a plurality of microcavities are formed between the pixel electrode and the roof layer, each microcavity includes liquid crystal materials, a partition wall is formed between the microcavities, and the roof layer includes a dry film.

Abstract: A leadframe (610) is formed that simplifies the packaging of light emitting elements and/or eliminates the need for stress-inducing folding after encapsulation. In particular, the folding of the contact tabs (505, 506) for surface mounting is performed prior to the mounting and encapsulation of the light emitting elements on the leadframe. In an example embodiment, the leadframe may be formed so that an array, or matrix, of light emitting elements may be packaged during a single packaging process.

Abstract: An optical film manufacturing method includes forming a master in which a shape corresponding to a plurality of micro-lens patterns is engraved, forming a low refractive index pattern layer in which the plurality of micro-lens patterns are formed, by using the master, forming a high refractive index material layer that has a higher refractive index than a refractive index of the low refractive index pattern layer, and imprinting the low refractive index pattern layer on the high refractive index material layer to form a high refractive index pattern layer, on a first surface of a substrate.

Abstract: A method for manufacturing LED packages includes steps: providing a lead frame including many pairs of first and second electrodes, and first and second tie bars, the first electrodes and second electrodes each including a main body and an extension electrode protruding outward from the main body; forming many molded bodies to engage with the pairs of the first and second electrodes, the first and second main bodies being embedded into the molded bodies, and the first and second extension electrodes being exposed out from a corresponding molded body; preforming many first grooves at a bottom of each molded body; disposing LED dies in the corresponding receiving cavities; and cutting the molded bodies along edges thereof defining the first grooves in a first direction and then along a second direction perpendicular to the first direction to obtain many individual LED packages.

Abstract: The present invention addresses the problem of providing a method for producing a phosphor dispersion liquid, which is not susceptible to settling of phosphor particles, without deteriorating the phosphor particles. In order to solve the above-mentioned problem, the present invention provides a method for producing a phosphor dispersion liquid that contains phosphor particles, laminar clay mineral particles, oxide microparticles and a solvent, said method comprising: a step of preparing a first dispersion liquid that has a viscosity of 50-500 mPa·s by mixing the laminar clay mineral particles, the oxide microparticles, and the solvent; and a step for mixing the phosphor particles into the first dispersion liquid.

Abstract: Provided is a semiconductor light emitting device 1 includes a semiconductor stacked layer 2 having a light extraction surface 3a perpendicular to a stacked surface of the semiconductor stacked layer 2, a light transmissive light guide member 3 disposed on the semiconductor stacked Layer 2, a light reflective member 4 disposed on the light guide member 3, and a light reflective package 5 which has an open portion corresponding to the light extraction surface 3a and surrounds peripheral surfaces of the semiconductor stacked layer 2.

Abstract: The method for manufacturing the semiconductor light emitting device includes steps of forming a plurality of semiconductor light emitting element regions on a substrate, forming a recess portion between the plurality of semiconductor light emitting element regions on a surface of the substrate, disposing a light reflective sealing resin on the substrate to cover the plurality of semiconductor light emitting element regions with the sealing resin and to fill the recess portion with a part of the sealing resin that covers the plurality of semiconductor light emitting element regions, removing the substrate, disposing a light transmissive resin on surfaces of the plurality of semiconductor light emitting element regions where the substrate has been removed, and dividing the plurality of semiconductor light emitting element regions into individual pieces, wherein the recess portion includes a first recess portion and one or more second recess portions shallower than the first recess portion.

Abstract: LED chips and packages are disclosed having lenses made of materials that resist degradation at higher operation temperatures and humidity, and methods of fabricating the same. The lenses can be made of certain materials that can withstand high temperatures and high humidity, with the lenses mounted to the LED prior to certain critical metallization steps. This helps avoid damage to the metalized part that might occur as a result of the high mounting or bonding temperature for the lens. One embodiment of an LED chip comprises a flip-chip LED and a lens mounted to the topmost surface of the flip-chip LED. Lenses can be bonded to LEDs at the wafer level or at the chip level. Some of the LED chips and packages can have lenses of different materials with planar and/or curved surfaces.

Abstract: An apparatus includes a wafer with a number of openings therein. For each opening, an LED device is coupled to a conductive carrier and the wafer in a manner so that each of the coupled LED device and a portion of the conductive carrier at least partially fill the opening. A method of fabricating an LED device includes forming a number of openings in a wafer. The method also includes coupling light-emitting diode (LED) devices to conductive carriers. The LED devices with conductive carriers at least partially fill each of the openings.

Abstract: A method for manufacturing an LED (light emitting diodes) package includes providing a substrate having electrodes; providing an LED chip, the LED chip arranged on the substrate and electrically contacting the electrodes; providing an UV-curing adhesive layer, the UV-curing adhesive layer arranged on the substrate and entirely packaging the LED chip and the electrodes therein, and then the UV-curing adhesive layer being solidified.

Abstract: An optoelectronic semiconductor component has a volume-emitting sapphire flip-chip with an upper side and a lower side. This optoelectronic semiconductor component is embedded in an optically transparent mold body with an upper side and a lower side.

Abstract: A liquid crystal display panel is provided. The liquid crystal display panel includes a first substrate comprising a pixel area and a non-pixel area surrounding the pixel area, a thin-film transistor (TFT) disposed on the pixel area of the first substrate and a pixel electrode connected to the TFT, and a plurality of metal wirings disposed on the non-pixel area of the first substrate and one or more dummy patterns disposed adjacent to the metal wirings. The TFT includes a gate electrode, a source electrode, and a drain electrode, and the dummy patterns are formed of a same material as at least one of the gate source, the source electrode, and the drain electrode.

Abstract: A method of manufacturing a light-emitting device includes forming a first optical element on a first carrier, wherein the first optical element comprises an opening; forming a light-emitting element in the opening; forming a second optical element on the light-emitting element; forming a second carrier on the first optical element and the second optical element; removing the first carrier after forming the second carrier on the first optical element and the second optical element; and forming two separated conductive structures under the first optical element.

Abstract: An electroluminescent display or lighting product incorporates a panel comprising a collection of distinct light-emitting elements formed on a substrate. A plurality of distinct local seals are formed over respective individual light-emitting elements or groups of light-emitting elements. Each local seal is formed by depositing a low melting temperature glass powder suspension or paste using inkjet technology, and fusing the glass powder using a scanning laser beam having a tailored beam profile. The local seal may be used in conjunction with a continuous thin film encapsulation structure. Optical functions can be provided by each local seal, including refraction, filtering, color shifting, and scattering.

Abstract: Phosphors fabricated from one or more layers of a naturally lamellar or fabricated lamellar semiconductor that is combined with a substrate. One or more of the layers of the lamellar semiconductor are separated from bulk material. The one or more layers are transformed into a phosphor for use with one or more light-emitting devices for the purpose of modifying the light emitted by the light-emitting device(s). Such transformation can be effected in a variety of ways, such as precise thinning or thickening of the removed layer(s) and/or intercalating one or more species of ions into the layer(s) that function as phosphors.

Abstract: A fiber coupled semiconductor device and a method of manufacturing of such a device are disclosed. The method provides an improved stability of optical coupling during assembly of the device, whereby a higher optical power levels and higher overall efficiency of the fiber coupled device can be achieved. The improvement is achieved by attaching the optical fiber to a vertical mounting surface of a fiber mount. The platform holding the semiconductor chip and the optical fiber can be mounted onto a spacer mounted on a base. The spacer has an area smaller than the area of the platform, for mechanical decoupling of thermally induced deformation of the base from a deformation of the platform of the semiconductor device. Optionally, attaching the fiber mount to a submount of the semiconductor chip further improves thermal stability of the packaged device.

Abstract: An apparatus and method of forming a chip package with a waveguide for light coupling is disclosed. The method includes depositing an adhesive layer over a carrier. The method further includes depositing a laser diode (LD) die having a laser emitting area onto the adhesive layer and depositing a molding layer over the LD die and the adhesive layer. The method still further includes curing the molding layer and partially removing the molding layer to expose the laser emitting area. The method also includes depositing a ridge waveguide structure adjacent to the laser emitting area and depositing an upper cladding layer over the ridge waveguide structure.

Abstract: Provided is a light emitting device having a phosphor layer on a surface of a semiconductor light emitting element and achieving an even light distribution color, and a method of manufacturing the same. A method of manufacturing a light emitting device includes arranging a plurality of semiconductor light emitting elements spaced apart from each other on an expandable sheet, spraying a slurry containing a solvent, a thermosetting resin, and phosphor particles, onto an entire surface of the sheet having the arranged semiconductor light emitting elements to form a resin layer, pre-curing the resin layer, disuniting the resin layer formed on the surface of the semiconductor light emitting element from the resin layer formed on the sheet by expanding the sheet, and main curing the resin layer, which steps are performed in this order.

Abstract: Techniques are disclosed for making a flexible laminated circuit board using a metal conductor onto which a SMD may be attached. Conductive metal strips may be laminated to form a flexible substrate and the metal strips may then be perforated for the placement of LED package leads. The LED packages may be attached to the conductive strips using solder or a conductive epoxy and the upper laminate layer may include perforations exposing portions of the metal strips for the attachment of the LED packages. Alternatively, strings of LED packages may be fabricated by attaching LED packages to conductive strips and these strings may be laminated between flexible sheets to form a laminated LED circuit. Plastic housings may aid in attaching the LED packages to the conductive strips. The plastic housings and/or the laminate sheets may be made of a reflective material.

Abstract: Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

Abstract: Techniques are disclosed for integrating the LED lead frame into the LED circuit fabrication process. The LED packages within the lead frame may be spaced according to the final spacing of the LED packages on the finished circuit board, such that multiple LED packages may be attached to a circuit board at a time by applying the lead frame to circuit board and then removing portions of the lead frame, leaving the LED packages attached to the board. The LED packages may be attached using solder or conductive epoxy, in some embodiments. Alternatively, part of the lead frame may include conductive wires forming one or more strings of LED packages. An entire string of LED packages may then be removed from the lead frame in a single motion and placement may be performed for a string of LED packages all at once rather than for individual LED packages.

Abstract: Solid-state radiation transducer (SSRT) devices and methods of manufacturing and using SSRT devices are disclosed herein. One embodiment of the SSRT device includes a radiation transducer (e.g., a light-emitting diode) and a transmissive support assembly including a transmissive support member, such as a transmissive support member including a converter material. A lead can be positioned at a back side of the transmissive support member. The radiation transducer can be flip-chip mounted to the transmissive support assembly. For example, a solder connection can be present between a contact of the radiation transducer and the lead of the transmissive support assembly.

Abstract: Solid state lighting (SSL) devices and methods of manufacturing SSL devices are disclosed herein. In one embodiment, an SSL device comprises a support having a surface and a solid state emitter (SSE) at the surface of the support. The SSE can emit a first light propagating along a plurality of first vectors. The SSL device can further include a converter material over at least a portion of the SSE. The converter material can emit a second light propagating along a plurality of second vectors. Additionally, the SSL device can include a lens over the SSE and the converter material. The lens can include a plurality of diffusion features that change the direction of the first light and the second light such that the first and second lights blend together as they exit the lens. The SSL device can emit a substantially uniform color of light.

Abstract: Two or more molded ellipsoid lenses are formed on a packaged LED die by injecting a glue material into a mold over the LED die and curing the glue material. After curing, the refractive index of the lens in contact with the LED die is greater than the refractive index of the lens not directly contacting the LED die. At least one phosphor material is incorporated into the glue material for at least one of the lenses not directly contacting the LED die. The lens directly contacting the LED die may also include one or more phosphor material. A high refractive index coating may be applied between the LED die and the lens.

Abstract: Disclosed herein is a method of disposing phosphor layers, which can prevent damage to phosphors and also effectively dispose phosphor layers at desired locations of Light-Emitting Diodes (LEDs) when the phosphor layers are detached and disposed at the top surfaces of the LEDs. According to an embodiment, phosphor layers fabricated by filling phosphor layer pattern holes within an area of the vertical frame with a phosphor solution are detached from the phosphor layer pattern holes by applying force downwardly or upwardly in a vertical manner.

Abstract: A lens is formed over one or more light-emitting devices disposed over a substrate. The lens includes a trench that circumferentially surrounds the one or more light-emitting devices. The trench is filled with a phosphor-containing material.

Abstract: An optoelectronic component may include a carrier element having a heat sink, at least one semiconductor chip for emitting electromagnetic radiation which is mounted and electrically contact-connected on the carrier element, a radiation-transmissive cover disposed downstream of the at least one semiconductor chip, a converter layer applied on the radiation-transmissive cover and spaced apart from the at least one semiconductor chip, a frame composed of thermally conductive material, which frame extends around the at least one semiconductor chip and is in direct contact with the converter layer, and at least one connecting element for thermally connecting the frame to the heat sink.

Abstract: A method of manufacturing a light emitting device includes steps of preparing a light emitting element; preparing a wavelength converting member; and bonding the light emitting element and the wavelength converting member to each other using a surface activated bonding technique.

Abstract: A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.

Abstract: In accordance with certain embodiments, regions of spatially varying wavelength-conversion particle concentration are formed over light-emitting dies.