Abstract: A LED package is formed of a substrate, an LED chip, an insulated layer, and a fluorescent adhesive layer. The substrate includes a positive contact and a negative contact. The LED chip is fixed to the substrate and includes a positive terminal and a negative terminal, the former of which is electrically connected with the positive contact and latter is electrically connected with the negative contact. The insulated layer is mounted to the surface of the substrate and surrounds the LED chip. The fluorescent adhesive layer is mounted to a surface of the insulated layer and covers the LED chip. In this way, the LED package can reduce the production cost and the whole size.

Abstract: A light-emitting diode (LED) assembly includes an aluminum substrate, a silver layer, a distributed Bragg reflector (DBR) and an LED device. The aluminum substrate has a top surface whose length and width are each more than once centimeter. The silver layer is disposed over the entire top surface of the aluminum substrate. The DBR is disposed over the entire upper surface of the silver layer. The DBR includes an upper reflector layer and a lower reflector layer. The lower reflector layer contacts the upper surface of the silver layer. The Led device is attached to the upper reflector layer of the DBR, but the LED device is not disposed over the entire upper reflector layer. In one embodiment, the silver layer is deposited on the substrate using physical vapor deposition. In another embodiment, multiple pairs of lower reflector and higher reflector layers are included.

Abstract: A method for fabricating an LED/phosphor structure is described where an array of blue light emitting diode (LED) dies are mounted on a submount wafer. A phosphor powder is mixed with an organic polymer binder, such as an acrylate or nitrocellulose. The liquid or paste mixture is then deposited over the LED dies or other substrate as a substantially uniform layer. The organic binder is then removed by being burned away in air, or being subject to an 02 plasma process, or dissolved, leaving a porous layer of phosphor grains sintered together. The porous phosphor layer is impregnated with a sol-gel (e.g., a sol-gel of TEOS or MTMS) or liquid glass (e.g., sodium silicate or potassium silicate), also known as water glass, which saturates the porous structure. The structure is then heated to cure the inorganic glass binder, leaving a robust glass binder that resists yellowing, among other desirable properties.

Abstract: A highly reliable flexible light-emitting device is provided. The light-emitting device includes a first flexible substrate, a second flexible substrate, a light-emitting element between the first flexible substrate and the second flexible substrate, a first bonding layer; and a second bonding layer in a frame shape surrounding the first bonding layer. The first bonding layer and the second bonding layer are between the second flexible substrate and the light-emitting element. The light-emitting element includes layer containing a light-emitting organic compound between the pair of electrodes. The second bonding layer has a higher gas barrier property than the first bonding layer.

Abstract: The invention describes a method of manufacturing a VCSEL module (100) comprising at least one VCSEL chip (33) with an upper side (U) and a lower side (L) and with a plurality of VCSEL units (55) on a common carrier structure (35), the VCSEL units (55) comprising a first doped layer (50) of a first type facing towards the lower side (L) and a second doped layer (23) of a second type facing towards the upper side (U). The method comprises the steps of dividing the VCSEL chip (33) into a plurality of subarrays (39a, 39b, 39c, 39d, 39e, 39f, 39g, 39h, 39i) with at least one VCSEL unit (55) each, electrically connecting at least some of the subarrays (39a, 39b, 39c, 39d, 39e, 39f, 39g, 39h, 39i) in series. The invention also describes a VCSEL module (100) manufactured in such process.

Abstract: The present invention provides a method of manufacturing an electronic display. The exemplary method includes depositing a first conductive medium within a plurality of cavities of a substrate to form a plurality of first conductors. A plurality of electronic components in a suspending medium are then deposited within the plurality of cavities, and the plurality of electronic components are oriented using an applied field, followed by a bonding of the plurality of electronic components to the plurality of first conductors. A second, transmissive conductive medium is then deposited and bonded to the plurality of electronic components.

Abstract: According to one embodiment, a display device includes a display panel configured to hold a liquid crystal layer between a first substrate and a second substrate, a cover member positioned at a side of the second substrate of the display panel, a first optical element positioned at an outer surface side of the first substrate, and a second optical element positioned between the second substrate and the cover member, bonded to an inner surface of the cover member but not bonded to the second substrate.

Abstract: A method of manufacturing a semiconductor light emitting element includes preparing a semiconductor stacked layer structure by stacking a first semiconductor layer and a second semiconductor layer in this order, forming a second electrode and an insulating layer in this order on the second semiconductor layer, exposing the first semiconductor layer by removing a part of the second semiconductor layer, forming a first electrode by forming a metal layer on the exposed first semiconductor layer and the insulating layer and flattening a surface of the metal layer, forming a first electrode-side bonding layer having a top layer made of Au on the first electrode, preparing a support substrate including a support substrate-side bonding layer having a top surface made of Au, and bonding the first electrode-side bonding layer and the support substrate-side bonding layer.

Abstract: An LED package includes a lens, an LED chip securely received and engaged in the lens, and a base with an electrode assembly thereon. A bottom surface of the LED chip is bare. The lens is mounted on the base and the bottom surface of the LED chip electrically and mechanically connects with the electrode assembly.

Abstract: Light emitter devices and methods are provided herein. In some aspects, emitter devices and methods provided herein are for light emitting diode (LED) chips and can include providing a substrate, a conductive trace over the substrate, and at least one or more direct attach LED chip over the substrate. A layer of non-conductive and reflective material is disposed over the surface of wherein the layer of reflective material covers at least 25% or more of a surface of the substrate.

Abstract: Flexible substrates and devices including flexible substrates are provided. In an embodiment, a flexible substrate includes a first glass substrate material and a first organic light emitting device, disposed over the first flexible substrate, which includes a first emissive layer The first flexible substrate may have a thickness of not more than 300 ?m, a flexural rigidity of 10?1 Nm to 10?6 Nm, a water vapor transmission rate of not more than 10?6 g per square meter per day, a refractive index of not more than 1.6, a glass transition temperature of at least 300 C, a Young's modulus of 60 to 90 GPa, and/or an optical transmission of at least 85% for light in the range of 400 to 800 nm.

Abstract: Packaged light emitting diodes (LEDs) and methods of packaging a LED include providing a first lead having a first recess in a bottom surface and a second lead having a second recess in a bottom surface, placing a LED die over a top surface of at least one of the first and the second leads, electrically connecting the LED die to the first lead and to the second lead, forming a package around the LED die that includes an opening in its upper surface exposing at least the LED die, and separating the package containing the LED die, the first lead and the second lead from a lead frame such that the package contains a first castellation and a second castellation in a side surface of the package, such that the castellations expose the leads and/or a first platable metal which is electrically connected to the leads.

Abstract: An optoelectronic semiconductor device comprises a substrate, at least one solid via plug, at least one optoelectronic semiconductor chip, a phosphor layer and a molding body. The at least one solid via plug penetrates through the substrate. The at least one optoelectronic semiconductor chip has a first electrode aligned to and electrically connected with the solid via plug. The phosphor layer covers at least one surface of the optoelectronic semiconductor chip. The molding body encapsulates the substrate, the optoelectronic semiconductor chip and the phosphor layer. The number of solid valid plugs, substrate surfaces, electrodes, bonding pad on each surface of the substrate for forming each optoelectronic semiconductor device can be, for example, two, respectively.

Abstract: A light-emitting assembly and a method for manufacturing the same are provided. The light-emitting assembly includes a circuit board with a light-emitting element and a plurality of optical microstructures disposed thereon. The optical microstructures adjacent to the light-emitting element absorb or guide a portion of light emitted from the light-emitting element.

Abstract: An optoelectronic device comprises a body of an indirect bandgap semiconductor material having a surface and a photon active region on one side of the surface. A light directing arrangement is formed integrally with the body on an opposite side of the surface.

Abstract: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of HI-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with Complimentary Metal Oxide Semiconductor (CMOS) integrated circuits.

Abstract: A method of forming a light sheet includes depositing a reflective conductor layer over a substrate, printing a layer of microscopic inorganic LEDs on the conductor layer, depositing a first dielectric layer, having a first index of refraction, over the conductor layer and along sidewalls of the LEDs, and depositing a transparent conductor layer over the LEDs so that the LEDs are connected in parallel. The transparent conductor layer may be a wire mesh with openings. A liquid or paste polymer layer is then deposited over the transparent conductor layer and directly contacts the first dielectric layer. The indices of refraction of both layers are similar to reduce TIR. The top surface of the polymer layer is then molded to contain light extraction features to reduce waveguiding in the light sheet.

Abstract: An organic light emitting diode (OLED) package includes a substrate, an OLED die mounted on the substrate and an encapsulation layer encapsulating the OLED die. The OLED package further includes a protecting layer formed on the OLED die. The encapsulation layer has a multi-layered structure and is deposited on the protecting layer. Refractive indexes of a cathode of the OLED die, the protecting layer and the encapsulation layer are gradually decreased in the sequence. A barrier layer for blocking moisture from entering the OLED package is formed on a bottom surface of the substrate by atomic layer deposition (ALD) method. The present disclosure also provides a method for manufacturing the OLED package.

Abstract: A method of manufacturing joined body including: firstly, putting sheet material in intimate contact with first substrate to cover, with resin layer of sheet material, areas of first substrate including first area, boundary area surrounding first area, and second area located across from first area with respect to boundary area, sheet material being laminate including resin layer and separable layer, resin layer containing uncured sealing resin; secondly, curing sealing resin in part of resin layer covering boundary area; thirdly, removing, along with separable layer, part of resin layer covering second area in one direction from one end towards the other of two ends of second area; and fourthly, joining first substrate and second substrate together by arranging second substrate to face first substrate and curing sealing resin with parts of resin layer covering boundary area and first area located between second substrate and first substrate.

Abstract: An optical element package includes: an optical element in a form of a chip, and a lens resin having a convex lens surface covering an optical functional surface of the optical element. The convex lens surface is formed as a rough surface having a plurality of minute convex curved surfaces having a vertex in a direction perpendicular to a plane in contact with each part of the convex lens surface.

Abstract: A light emitting diode (LED) package is provided. The LED package includes a printed circuit board (PCB), an electrode pad, an LED, a wire, and first and second moldings. The electrode pad and the LED are formed on the PCB. The wire electrically connects the LED with the electrode pad. The first molding is formed on the LED and the second molding is formed on the first molding.

Abstract: In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

Abstract: The present invention relates to a method for laminating an alignment film onto an organic light emitting diode. The method includes a) deploying a bonding agent over a surface of the organic light emitting diode; b) laminating the alignment film with the organic light emitting diode on the surface deployed with bonding agent; and c) curing the bonding agent with heat or light such that the alignment film and the organic light emitting diode are completely laminated. The present invention further discloses an LED display device. By way of foregoing, during the lamination of the alignment film, bubbles can be avoided, and the yield can be increased.

Abstract: A display device includes a flat transparent plate, a display panel, at least one film, and a transparent adhesive layer. The display panel is separated below the transparent plate. The at least one film is disposed between the transparent plate and the display panel, and is attached to a lower peripheral region of the transparent plate. The transparent adhesive layer is disposed between the transparent plate and the display panel, and laminates the transparent plate and the display panel. Other various embodiments are possible.

Abstract: A method for manufacturing a semiconductor light emitting device comprises step of: arraying semiconductor light emitting elements on an adhesive sheet so that electrodes of the semiconductor light emitting elements face the adhesive sheet; forming a wafer thereof by filling spaces between side surfaces of the semiconductor light emitting elements arrayed on the adhesive sheet with a resin and curing the resin; peeling the adhesive sheet from the wafer; overlaying the wafer on a substrate from which numerous substrates can be obtained by subdivision into individual pieces and the electrodes of the semiconductor light emitting elements and electrodes formed on the large circuit substrate are joined; and subdividing the large circuit substrate, to which the wafer has been joined, into individual semiconductor light emitting devices so that the planar size of the semiconductor light emitting element and that of the circuit substrate are roughly equal.

Abstract: An optoelectronic module (202, 204, 206, 208, 210, 212, 214, 216, 218, 220, 222, 224, 226, 228, 230, 232, 234) comprises a carrier (102), at which and/or in which are arranged at least two semiconductor chips (104, 104a1, 104a2, 104b; 106, 106a1, 106a2, 106b, 106c) for emitting electromagnetic radiation (108a, 108b). An emission unit (110) for emitting electromagnetic radiation (109) from the optoelectronic module (202, 204, 206, 208, 210, 212, 214, 216, 218, 220, 222, 224, 226, 228, 230, 232, 234) is arranged on or in the carrier (102). At least one of the semiconductor chips (106, 106a1, 106a2, 106b, 106c) is spaced apart from the emission unit (110). A waveguide (112) guides the electromagnetic radiation (108a) of the at least one spaced-apart semiconductor chip (106, 106a1, 106a2, 106b, 106c) to the emission unit (110). The emission unit (110) has a coupling-out structure (114, 114a, 114b, 114c) for coupling out the electromagnetic radiation (108a) from the waveguide (112).

Abstract: A method for manufacturing an LED (light emitting diode) with bat-wing emitting field lens is disclosed. Firstly, a substrate is provided. The substrate includes a plurality of depressions each corresponding to a pair of electrodes. A plurality of LED chips are fastened in the depressions and electrically connected to the pairs of electrodes. A plurality of unsolidified lenses are formed in the depressions to cover the LED chips. A pressing mold including a plurality of protrusions is provided. The pressing mold is moved towards the substrate to force the protrusions of the pressing mold to insert into the unsolidified lenses. The lenses are solidified and the pressing mold is removed and concavities are defined at the lenses. The substrate is cut to obtain a plurality of separated and finished LEDs.

Abstract: Disclosed is a method of fabricating a light-emitting diode package, which comprises a light-emitting chip operative to emit light of a first wavelength range. The method comprises the steps of: dispensing a photoluminescent mixture on the light-emitting chip, the photoluminescent mixture being capable of absorbing a portion of light of the first wavelength range emitted from the light-emitting chip to re-emit light of a second wavelength range; partially curing the photoluminescent mixture by heating the photoluminescent mixture to a pre-curing temperature and then cooling the photoluminescent mixture to below the pre-curing temperature; and fully curing the photoluminescent mixture to harden the photoluminescent mixture. An apparatus for fabricating a light-emitting diode package is also disclosed.

Abstract: The present invention relates to the field of a light emitting device (1), comprising a light emitting diode (2) arranged on a submount (3), said device having a lateral circumference surface (6) and a top surface (8), and an optically active coating layer (7), said coating layer (7): covering along at least a part of said circumference surface (6), extending from the submount (3) to said top surface (8), and essentially not covering the top surface (8). A method for producing the device is also disclosed.

Abstract: A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The light emitting diodes emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting section, a light transmitting section, a wavelength conversion section, a first conductive section, a second conductive section and a sealing section. The light emitting section includes a first major surface, a second major surface opposite from the first major surface, and a first electrode section and a second electrode section formed on the second major surface. The light transmitting section is provided on a side of the first major surface. The wavelength conversion section is provided over the light transmitting section. The wavelength conversion section is formed from a resin mixed with a phosphor, and hardness of the cured resin is set to exceed 10 in Shore D hardness.

Abstract: To improve the yield in a peeling process and improve the yield in a manufacturing process of a flexible light-emitting device or the like, a peeling method includes a first step of forming a peeling layer over a first substrate, a second step of forming a layer to be peeled including a first layer in contact with the peeling layer over the peeling layer, a third step of curing a bonding layer in an overlapping manner with the peeling layer and the layer to be peeled, a fourth step of removing part of the first layer overlapping with the peeled layer and the bonding layer to form a peeling starting point, and a fifth step of separating the peeling layer and the layer to be peeled. The peeling starting point is preferably formed by laser light irradiation.

Abstract: An organic light emitting diode includes: a substrate; an encapsulation substrate facing the substrate and including a transmission region through which light is transmitted and an absorption region through which the light is not transmitted; a sealant between the substrate and the encapsulation substrate; and a pixel unit between the substrate and the encapsulation substrate, and including a plurality of pixels respectively including an organic light emitting element. The absorption region of the encapsulation substrate includes photoreactive crystals.

Abstract: A semiconductor light-emitting device includes a light-impervious substrate, a bonding structure, a semiconductor light-emitting stack, and a fluorescent material structure overlaying the semiconductor light-emitting stack. The semiconductor light-emitting stack is separated from a growth substrate and bonded to the light-impervious substrate via the bonding structure. A method for producing the semiconductor light-emitting device includes separating a semiconductor light-emitting stack from a growth substrate, bonding the semiconductor light-emitting stack to a light-impervious substrate, and forming a fluorescent material structure over the semiconductor light-emitting stack.

Abstract: A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers.

Abstract: A light-emitting device package having improved connection reliability of a bonding wire, heat dissipation properties, and light quality due to post-molding and a method of manufacturing the light-emitting device package. The light-emitting device package includes, for example, a wiring substrate having an opening; a light-emitting device that is disposed on the wiring substrate and covers the opening; a bonding wire electrically connecting a bottom surface of the wiring substrate to a bottom surface of the light-emitting device via the opening; a molding member that surrounds a side surface of the light-emitting device and not a top surface of the light-emitting device, which is an emission surface, is formed on a portion of a top surface of the wiring substrate, and is formed in the opening of the wiring substrate to cover the bonding wire; and a solder resist and a bump formed on the bottom surface of the wiring substrate.

Abstract: Lighting devices including light-emitting diodes and associated devices, systems, and methods are disclosed herein. A lighting device configured in accordance with a particular embodiment includes a lighting-emitting diode and an optical component along a radiation path of the lighting-emitting diode. The optical component includes a color-converting material with walls defining a pattern, the walls extending generally entirely through a thickness of the color-converting material. A total surface area of the walls within a primary zone of the optical component is greater than a total surface area of color-converting features at a major side of the color-converting material. A method for making a lighting device in accordance with a particular embodiment includes combining an optical component and a light-emitting diode, and shaping a color-converting material of the optical component to have a thickness and a pattern of walls selected to control the color of light output from the lighting device.

Abstract: an anisotropic conductive adhesive which uses conductive particles where a silver-based metal is used as a conductive layer, having high light reflectance and excellent migration resistance is provided. The anisotropic conductive adhesive includes light reflective conductive particles in an insulating adhesive resin. The light reflective conductive particle includes a light reflective metal layer made of a metal alloy including silver, gold and hafnium formed on the surface of a resin particle as a core by sputtering method. The light reflective metal layer is preferably formed having a composition ratio of a silver of at least 50% by weight to at most 80% by weight: a gold of at least 10% by weight to at most 45%: a hafnium of at least 10% by weight to at most 40% by weight, and a total ratio does not exceed 100% by weight.

Abstract: A semiconductor device includes a substrate; a light emitting element flip-chip mounted on the substrate; a phosphor-containing member provided at least above the light emitting element and separated from the light emitting element; and a first reflecting member configured to cover the phosphor-containing member, at least one of a side faces of the light emitting device having an opening for extracting light emitted from the light emitting element and light wavelength-converted by the phosphor-containing member.

Abstract: A display device and a method of manufacturing the display device improve reliability by preventing contact between a color filter, a light blocking member and a liquid crystal layer. The display device includes: a substrate including pixel areas; a thin film transistor formed on the substrate; a pixel electrode connected to the thin film transistor and formed in the pixel areas; a roof layer formed on the pixel electrode; microcavities interposed between the pixel electrode and the roof layer; an injection hole formed in the roof layer, the injection hole configured to expose at least a portion of the microcavities; a liquid crystal layer filled in at least one of the microcavities; an encapsulation layer formed on the roof layer, the encapsulation layer configured to cover the injection hole and to seal the microcavities; and an organic layer formed on the encapsulation layer.

Abstract: A semiconductor device includes a first chip, a dielectric layer over the first chip, and a second chip over the dielectric layer. A conductive layer is embedded in the dielectric layer and is electrically coupled to the first chip and the second chip. The second chip includes an optical component. The first chip and the second chip are arranged on opposite sides of the dielectric layer in a thickness direction of the dielectric layer.

Abstract: The invention is directed towards methods and compositions for identifying the amount of hydrofluoric acid in a buffered oxide etching composition. In buffered oxide etching compositions it is very difficult to measure the amount of hydrofluoric acid because it has varying equilibriums and it is toxic so it hard to handle and sample. When used to manufacture microchips however, incorrect amounts of hydrofluoric acid will ruin those chips. The invention utilizes a unique method of spectrographically measuring the hydrofluoric acid when in contact with added chromogenic agents to obtain exact measurements that are accurate, immediate, and safe.

Abstract: A method for making a light emitting module includes: a. providing a flexible substrate; b. forming a plurality of rigid portions in the flexible substrate; c. forming an electrically conductive layer on the rigid portions, the electrically conductive layer having several electrodes apart from each other; d. arranging a plurality of LED dies on the electrically conductive layer with each LED die striding over and electrically connected to two neighboring electrodes; e. forming an encapsulating layer to cover the LED dies; and f. cutting through the flexible substrate. At least one of above steps b, c, d, e is performed by a roll applying process.

Abstract: Disclosed is a light emitting apparatus. The light emitting apparatus includes a package body; first and second electrodes; a light emitting device electrically connected to the first and second electrodes and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; and a lens supported on the package body and at least a part of the lens including a reflective structure. The package body includes a first cavity, one ends of the first and second electrodes are exposed in the first cavity and other ends of the first and second electrodes are exposed at lateral sides of the package body, and a second cavity is formed at a predetermined portion of the first electrode exposed in the first cavity.

Abstract: An optical device wafer has a plurality of optical devices formed on a front side and a plurality of crossing division lines for partitioning the optical devices. Each optical device has electrodes formed on the front side. A processing method includes: forming a groove on the front side of the wafer along each division line, the groove having a depth reaching a finished thickness; of forming a nonconductive reflective film on the front side of the wafer to thereby form the reflective film on at least the side surfaces of the groove; removing the reflective film formed on the electrodes to thereby expose the electrodes; and grinding a back side of the wafer to thereby reduce the thickness to the finished thickness until the groove is exposed to the back side of the wafer to divide the wafer into individual optical device chips.

Abstract: According to one embodiment, a light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a first insulating layer, a p-side interconnect layer, an n-side interconnect layer, and a second insulating layer. The portion of the second p-side interconnect layer has the L-shaped cross section being configured to include a p-side external terminal exposed from the first insulating layer and the second insulating layer at a third surface having a plane orientation different from the first surface and the second surface. The portion of the second n-side interconnect layer has the L-shaped cross section being configured to include an n-side external terminal exposed from the first insulating layer and the second insulating layer at the third surface.

Abstract: A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure is arranged on the buffer layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer in sequence. The first semiconductor layer has a second surface attached to the active layer. A distance between a peak of each the projections and the second surface of the first semiconductor layer is ranged from 0.5 ?m to 2.5 ?m.

Abstract: Disclosed is an organic light emitting display device which prevents or inhibits external gas, such as, oxygen or moisture, from penetrating into a display unit and reinforces a mechanical strength by providing a first sealant and a second sealant. The organic light emitting display device may include: a first substrate; a display unit on the first substrate; a second substrate covering the display unit; a first sealant adhering the first substrate to the second substrate; and a second sealant around the first sealant, the second sealant sealing the first substrate and the second substrate. A filler may be included in the second sealant, and a particle size of the filler may be larger than a gap between the first substrate and the second substrate.

Abstract: Organic light-emitting displays and methods of manufacturing the same are disclosed. An organic light-emitting display includes a substrate; a display panel provided on the substrate, the display panel having an emission area in which an organic light-emitting device is provided and a non-emission area that separates the emission area; and a color-changing material layer provided on the display panel, wherein the color-changing material layer includes a light-transmission part corresponding to the emission area and a light-blocking part corresponding to the non-emission area.

Abstract: This invention discloses methods and apparatus to form organic semiconductor transistors upon three-dimensionally formed insert devices. In some embodiments, the present invention includes incorporating the three-dimensional surfaces with organic semiconductor-based thin film transistors, electrical interconnects, and energization elements into an insert for incorporation into ophthalmic lenses. In some embodiments, the formed insert may be directly used as an ophthalmic device or incorporated into an ophthalmic device.