Abstract: A method for producing an output coupling element and an output coupling element are disclosed. In an embodiment a method includes producing a suspension having quantum dots in a suspension medium, wherein each quantum dot comprises a core having a semiconductor material, directly applying the suspension onto a surface of an optoelectronic component and/or onto a surface of a carrier and removing the suspension medium for producing the output coupling element, wherein the output coupling element is matrix-free and transparent to radiation of a red range and/or a IR range.

Abstract: Described are light emitting apparatus with self-aligned elements and techniques for manufacturing such light emitting apparatus. In certain embodiments, a light emitting apparatus includes a mesa formed by a plurality of semiconductor layers. The light emitting apparatus further includes an electrical contact on one of the semiconductor layers and a spacer around the electrical contact. The spacer is aligned with respect to the electrical contact, which permits etching around the spacer to define the shape of the mesa in such a way that the mesa is also aligned with respect to the electrical contact. In particular, the electrical contact is substantially centered between opposing sidewalls of the mesa.

Abstract: A method of fabricating an optoelectronic component within a silicon-on-insulator substrate, the method comprising: providing a silicon-on-insulator (SOI) substrate, the SOI substrate comprising a silicon base layer, a buried oxide (BOX) layer on top of the base layer, and a silicon device layer on top of the BOX layer; etching a first cavity region into the SOI substrate and etching a second cavity region into the SOI substrate, the first cavity region having a first depth and the second cavity region having a second depth, the second depth being greater than the first depth; depositing a multistack epi layer into the first and the second cavity regions simultaneously, the multistack epi layer comprising a first multistack portion comprising a first active region and a second multistack portion comprising a second active region.

Abstract: A phosphor carrier assembly includes a substrate, a thermal or UV activated release adhesive, a layer containing a pixelated phosphor array, and a partially cured or highly viscous adhesive. The phosphor pixels on the carrier are typically all of the same color. In formation of a phosphor converted LED array the phosphor pixels on the carrier assembly are aligned with and placed in contact with corresponding LED pixels in an array of pixelated LED dice. Selected phosphor pixels on the carrier assembly may then be attached to corresponding LED pixels, and released from the substrate, by powering (activating) the corresponding LED pixels to heat the selected phosphor pixel to a temperature that releases the thermal release adhesive and that cures or partially cures the adhesive on the selected phosphor pixels in contact with the corresponding LED pixels.

Abstract: An optical cup which mixes multiple channels of light to form a blended output, the device having discreet zones or channels including a plurality of reflective cavities each having a remote phosphor light converting appliance covering a cluster of LEDs providing a channel of light which is reflected upward. The predetermined blends of phosphors provide a predetermined range of illumination wavelengths in the output.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor stack, a trench formed in the semiconductor stack, a current confinement layer, a first electrode and a second electrode. The semiconductor stack includes a first reflective structure, a second reflective structure, and a cavity region. The cavity is between the first reflective structure and the second reflective structure and has a first surface and a second surface opposite to the first surface. The current confinement layer is in the second reflective structure. The first electrode and the second electrode are on the first surface.

Abstract: A flexible display panel is provided, including a display region and a bending region; a support layer; a substrate disposed on the support layer; a barrier layer disposed on a side of the substrate away from the support layer; a thin film transistor layer disposed on a side of the barrier layer away from the substrate; an organic light emitting layer disposed on a side of the thin film transistor layer away from the barrier layer; and an encapsulation layer disposed on the thin film transistor layer and the organic light emitting layer. In addition, in the bending region, the support layer has at least one groove, and an elastic layer is disposed in the groove. The present disclosure solves the problem of poor recovery ability and poor support ability of the bending region of the display panel.

Abstract: In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

Abstract: A sheet-shaped stretchable structure including stretchable resin sheets laminated together is provided. A conductive layer may be disposed at least at one of several positions. For example, the conductive layer may be disposed between any two adjacent ones of the laminated stretchable resin sheets. The conductive layer may be disposed on a top surface of an uppermost one of the laminated stretchable resin sheets. Further, the conductive layer may be disposed on a bottom surface of a lowermost one of the laminated stretchable resin sheets, and a via hole.

Abstract: The present disclosure discloses an organic light-emitting diode device, a manufacturing method thereof and a display device. The organic light-emitting diode device comprises: a substrate (100); an organic light-emitting diode layer (200) on a side of the substrate (100); and a barrier layer (510) configured to block ultraviolet rays from entering the organic light-emitting diode layer, wherein the barrier layer is on a side of the organic light-emitting diode layer away from the substrate or on a side of the organic light-emitting diode layer close to the substrate. The organic light-emitting diode device can solve the technical problem of short service life due to the influence of ultraviolet rays in the sunlight.

Abstract: The pcLED pixels in a phosphor-converted LED array each comprise an optical element on the light-emitting surface above the phosphor layer. In methods for making such pixelated LED arrays, a thin layer of a sacrificial phosphor carrier substrate is retained as the optical element on the output surface of the phosphor pixels upon completion of the fabrication process.

Abstract: An electronic device, such as, without limitation, a perovskite solar cell or a light emitting diode, includes an assembly including at least one electronic portion or component, and a composite coating layer covering at least part of the assembly including the at least one electronic portion or component. The composite coating layer includes a polymer material, such as, without limitation, PMMA or PMMA-PU, having nanoparticles, such as, without limitation, reduced graphene oxide or SiO2, embedded therein. The electronic device may further include a second coating layer including a second polymer material (such as, without limitation, PMMA or PMMA-PU without nanoparticles) positioned between the coating layer and the assembly.

Abstract: A method of manufacturing a light-emitting device includes: arranging a plurality of light-emitting elements each having an upper surface; disposing a first reflective member between the plurality of light-emitting elements such that the upper surface of each of the plurality of light-emitting elements are exposed and such that lateral surfaces of the light-emitting elements are covered with the first reflective member; disposing a light-transmissive member over the upper surface of each of the plurality of light-emitting elements and the first reflective member; forming a plurality of grooves surrounding one or two or more light-emitting elements by removing a portion of the light-transmissive member and a portion of the first reflective member; disposing a second reflective member to fill the plurality of grooves; and cutting the second reflective member to perform singulation.

Abstract: A semiconductor light emitting device package includes a lead frame structure including a first lead frame and a second lead frame. A resin portion is adjacent to side surfaces of the first lead frame and the second lead frame. A semiconductor light-emitting device is mounted on the first lead frame and the second lead frame, in the form of a flip chip, by eutectic bonding. Each of the first lead frame and the second lead frame has a plurality of first grooves extended in a first direction.

Abstract: The present invention relates to a backlight module and manufacturing method thereof. The backlight module comprises: a soft substrate having an outer surface and a flexible substrate; a reflective layer disposed on the outer surface of the soft substrate; a white quantum dot light emitting layer disposed on the soft substrate; an electrode layer disposed on the white quantum dot light emitting layer and covering the soft substrate.

Abstract: There may be provided a method for generating a structure, the method may include receiving multiple donor structures that comprise multiple mesas; placing the multiple donor structures on a substrate that lacks a semiconductor layer that covers the entire substrate; and performing a manufacturing process that comprises coupling the multiple mesas to the substrate.

Abstract: A wavelength conversion member complex includes a wavelength conversion member, a joining material, and a heat dissipation member. The wavelength conversion member includes a support and a phosphor member. The support defines a through-hole extending from an upper surface to a lower surface. The support has a concave portion on the lower surface around the through-hole. The concave portion is spaced apart from the through-hole. The phosphor member is disposed in the through-hole and includes a phosphor. The lower surface of the phosphor member is continuous with the lower surface of the support. The joining material is disposed in the concave portion, and has a lower surface that is flush with the lower surface of the support. The heat dissipation member is disposed under the joining material and the phosphor member, and has an upper surface in contact with the lower surface of the joining material.

Abstract: A vehicle lamp includes a substrate. A first conductor is positioned on the substrate. A dielectric layer is coupled to the first conductor. A semiconductor layer is configured to emit a first light. A second conductor is coupled to the semiconductor layer. A polymeric layer comprising a photoluminescent element coupled to the second conductor. The photoluminescent element is configured to emit a second light in response to receiving the first light.

Abstract: A monochromatic chip-scale packaging (CSP) light emitting diode (LED) device with an asymmetrical radiation pattern, including a flip-chip LED semiconductor die, and a reflective structure, is disclosed. A white-light broad-spectrum CSP LED device with asymmetrical radiation pattern is also disclosed by further including a photoluminescent structure in the CSP LED device. The photoluminescent structure covers at least the upper surface of the LED semiconductor die. The reflective structure adjacent to the LED semiconductor die and the photoluminescent structure reflects at least partial light beam emitted from the edge surface of the LED semiconductor die or the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically. A method to fabricate the aforementioned CSP LED device is also disclosed.

Abstract: A light emitting device package can include first and second frames spaced apart from each other; a package body including a body portion between the first and second frames; a light emitting device including first and second electrode pads; first and second through holes in the first and second frames, respectively; a first resin between the body portion and the light emitting device; and a conductive material in the first and second through holes, in which the first and second electrode pads of the light emitting device respectively overlap with the first and second through holes, the first and second electrode pads are spaced apart from each other, and the conductive material in the first and second through holes respectively contacts the first and second electrode pads, and a first side surface of the first electrode pad and a second side surface of the second electrode pad facing the first side surface both contact the first resin.

Abstract: A method for producing an organic EL device in this disclosure includes the steps of providing an element substrate including a substrate and a plurality of organic EL devices arranged on the substrate; and forming a thin film encapsulation structure over the element substrate. The step of forming the thin film encapsulation structure includes the steps of forming a first inorganic barrier layer over the element substrate; condensing a photocurable resin on the first inorganic barrier layer; irradiating a plurality of selected regions of the photocurable resin with a laser beam to cure at least a part of the photocurable resin, thus to form a photocurable resin layer; removing an uncured part of the photocurable resin; and forming a second inorganic barrier layer, covering the photocurable resin layer, on the first inorganic barrier layer.

Abstract: A vertical type light emitting diode die and a method for fabricating the same is disclosed. A growth substrate is provided and an epitaxial layer is formed on the growth substrate. A metallic combined substrate is connected to the epitaxial layer. Then, the growth substrate is removed. Electrode units are formed on the top surface of the epitaxial layer. The epitaxial layer is divided into epitaxial dies according to the number of the plurality of electrode units. Each vertical type light emitting diode die formed in the abovementioned way includes the metallic combined substrate having a first metal layer and second metal layers. The first metal layer is combined with the two second metal layers by cutting, vacuum heating, and polishing, so as to enable the metallic combined substrate to have a high coefficient of thermal conductivity, a low coefficient of thermal expansion, and initial magnetic permeability.

Abstract: An example of a method of micro-transfer printing comprises providing a micro-transfer printable component source wafer, providing a stamp comprising a body and spaced-apart posts, and providing a light source for controllably irradiating each of the posts with light through the body. Each of the posts is contacted to a component to adhere the component thereto. The stamp with the adhered components is removed from the component source wafer. The selected posts are irradiated through the body with the light to detach selected components adhered to selected posts from the selected posts, leaving non-selected components adhered to non-selected posts. In some embodiments, using the stamp, the selected components are adhered to a provided destination substrate. In some embodiments, the selected components are discarded. An example micro-transfer printing system comprises a stamp comprising a body and spaced-apart posts and a light source for selectively irradiating each of the posts with light.

Abstract: A micro-LED transfer method and a manufacturing method are disclosed. The micro-LED transfer method comprises: coating a sacrificial layer on a carrier substrate, wherein micro-LEDs are bonded on the carrier substrate through a first bonding layer (S1100); patterning the sacrificial layer to expose micro-LEDs to be picked up (S1200); bonding the micro-LEDs to be picked up with a pickup substrate through a second bonding layer (S1300); removing the sacrificial layer by undercutting (S1400); lifting-off the micro-LEDs to be picked up from the carrier substrate (S1500); bonding the micro-LEDs on the pickup substrate with a receiving substrate through a third bonding layer (S1600); and lifting-off the micro-LEDs from the pickup substrate (S1700).

Abstract: A light emitting diode package includes a light emitting diode chip, a light conversion layer covering the light emitting diode chip, a reflecting layer surrounding the light emitting diode chip. The light emitting chip has a light output top surface, a first electrode and a second electrode. The first electrode and the second electrode are opposite to the light output top surface. The light emitting diode package further includes a supporting layer made of metal material. The supporting layer is mounted on a bottom surface of the reflecting layer facing away from the light output top surface and surrounds the light emitting chip and the light conversion layer.

Abstract: A light emitting device includes a first light transmissive supportive substrate having a first light transmissive insulator and a conductive circuitry layer provided on a surface of the first light transmissive insulator, a second light transmissive supportive substrate having a second light transmissive insulator and disposed in such a way that a surface of the second light transmissive insulator faces the conductive circuitry layer and so as to have a predetermined gap from the first light transmissive supportive substrate, a light emitting diode having a main body, and first and second electrodes provided on a surface of the main body and electrically connected to the conductive circuitry layer via a conductive bump, and laid out between the first and second light transmissive supportive substrates, and a third light transmissive insulator embedded in a space between the first light transmissive supportive substrate and the second light transmissive supportive substrate.

Abstract: A repaired transfer printed system (e.g., micro-transfer printed system) includes a system substrate having two or more contact pads disposed on the system substrate. One or more transfer printed devices (e.g., micro-transfer printed devices) are disposed in contact with the system substrate, each device having two or more connection posts. Each connection post of a replacement device is in physical contact with a contact pad, the connection post forming a second imprint in the physically contacted contact pad. In certain embodiments, a first imprint is in at least one of the physically contacted contact pads and is between the replacement device and the system substrate.

Abstract: A light emitting structure including mixing cups are described. In an embodiment, a light emitting structure includes a light emitting diode (LED) bonded to a substrate, a diffuser layer adjacent the LED, an angular filter directly over the diffuser layer and the LED, and an overcoat layer directly over the angular filter and the LED.

Abstract: The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

Abstract: A method of manufacturing a package, the method comprising the steps of: preparing a resin compact having a recess, and including a pair of leads arranged at a bottom surface of the recess, a first resin body forming a lateral wall of the recess, and a second resin body arranged between the pair of leads; forming a reflective film entirely on at least the bottom surface of the recess and an inner surface of the lateral wall of the recess; and removing the reflective film formed on the pair of leads in the recess in the resin compact on which the reflective film has been formed.

Abstract: In accordance with certain embodiments, phosphor arrangements are formed via adhering phosphors to activated regions on a substrate and transferring them to a different substrate.

Abstract: An elastomeric interface layer (elayer) is formed over multiple light emitting diode (LED) dies by depositing photoresist materials across multiple LED dies, and using the LED dies as a photolithography mask to facilitate formation of the elayer on each LED die. The elayer facilitates adhesive attachment of each LED die with a pick and place head (PPH), allowing the LED dies to be picked up and placed onto a display substrate including control circuits for sub-pixels of an electronic display. In some embodiments, the LED dies are micro-LED (?LED) dies.

Abstract: A lighting apparatus includes an optical member with a diffractive optical element. The optical member is directly fixed on a substrate with plural lighting chips. When the lighting apparatus is applied to a laser diode module, the height and volume of the overall laser diode module are reduced. Consequently, the laser diode module is suitably applied to a small-size device.

Abstract: A method comprising bonding a first substrate to a second substrate. The first substrate includes a layer of one or more pairs of reactive material. The method comprising triggering a reaction between the one or more pairs of reactive material and fragmenting the second substrate.

Abstract: Provided are a light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer and including a first surface and a second surface; first and second contact electrodes each ohmic-contacting the first and second conductivity type semiconductor layers; and first and second electrodes disposed on the first surface of the light emitting structure, in which the first and second electrodes each include sintered metal particles and the first and second electrodes each include inclined sides of which the tangential gradients with respect to sides of vertical cross sections thereof are changing.

Abstract: A method for manufacturing a light emitting device, includes providing a light emitting element including an electrode-formed surface, a substrate surface opposite to the electrode-formed surface, and a light emitting surface connecting the electrode-formed surface and the substrate surface. A bottom mold including a mounting surface having a protrusion and mold recesses provided on both sides of the protrusion to define the protrusion is provided. The light emitting element is mounted on the protrusion such that the light emitting surface faces the protrusion. A covering material is provided on the mounting surface of the bottom mold to fill the mold recesses and to cover an entirety of the light emitting element except for the light emitting surface. The bottom mold with the protrusion is removed to provide a recess in the covering material. A light-transmissive material is provided in the recess of the covering material.

Abstract: A monochromatic chip-scale packaging (CSP) light emitting diode (LED) device with an asymmetrical radiation pattern, including a flip-chip LED semiconductor die, and a reflective structure, is disclosed. A white-light broad-spectrum CSP LED device with asymmetrical radiation pattern is also disclosed by further including a photoluminescent structure in the CSP LED device. The photoluminescent structure covers at least the upper surface of the LED semiconductor die. The reflective structure adjacent to the LED semiconductor die and the photoluminescent structure reflects at least partial light beam emitted from the edge surface of the LED semiconductor die or the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically. A method to fabricate the aforementioned CSP LED device is also disclosed.

Abstract: The present disclosure relates to a III-N based substrate for power electronic devices, comprising a base substrate, a III-N laminate above the base substrate and a buffer layer structure between the base substrate and the III-N laminate. The buffer layer structure comprises at least a first superlattice laminate and a second superlattice laminate above the first superlattice laminate. The first superlattice laminate comprises a repetition of a first superlattice unit which consists of a plurality of first AlGaN layers. The second superlattice laminate comprises a repetition of a second superlattice unit which consists of a plurality of second AlGaN layers. An average aluminum content of the first superlattice laminate is a predetermined difference greater than an average aluminum content of the second superlattice laminate, to improve the vertical breakdown voltage. The present disclosure also relates to a method for manufacturing a III-N based substrate for power electronic devices.

Abstract: A method of manufacturing a light emitting device that includes a plurality of light emitting parts is provided. The method includes providing a base member having a plurality of recesses; mounting at least one light-emitting element in each of the plurality of recesses; disposing a light-transmissive layer continuously covering the plurality of recesses; and removing portions of the light-transmissive layer on the lateral wall between adjacent recesses to expose corresponding portions of the lateral wall, to obtain a plurality of light-transmissive members.

Abstract: A fine interval coating member for a LED display and a coating method using the same are provided. The coating member includes column portions and row portions crossing the column portions, and holes between the column portions and the row portions. The body portion includes a material that is melted at a temperature higher than room temperature and that is cured at the room temperature.

Abstract: There is disclosed a method of preparing a photovoltaic device. In particular, the method comprises integrating epitaxial lift-off solar cells with mini-parabolic concentrator arrays via a printing method. Thus, there is disclosed a method comprising providing a growth substrate; depositing at least one protection layer on the growth substrate; depositing at least one sacrificial layer on the protection layer; depositing at least one photoactive cell on the sacrificial layer; etching a pattern of at least two parallel trenches that extend from the at least one photoactive cell to the sacrificial layer; depositing a metal on the at least one photoactive cell; bonding said metal to a host substrate; and removing the sacrificial layer with one or more etch steps. The host substrate can be a siloxane, which when rolled, can form a stamp used to integrate solar cells into concentrator arrays. There are also disclosed a method of making a growth substrate and the growth substrate made therefrom.

Abstract: A method of manufacturing a light emitting device includes: mounting at least one light emitting element on a support member with a first surface of the light emitting element facing upward; applying an adhesive to the first surface of the light emitting element by holding the support member and dipping the first surface of the light emitting element in the adhesive; and disposing a light-transmissive member on the first surface of the light emitting element via the adhesive.

Abstract: A light-emitting device includes a substrate; a light-emitting element mounted on the substrate; a first light-transmissive member bonded to an upper surface of the light-emitting element via an adhesive; and a second light-transmissive member placed on an upper surface of the first light-transmissive member. In a plan view of the light-emitting device, a peripheral edge of a lower surface of the first light-transmissive member is positioned more inward than a peripheral edge of the upper surface of the light-emitting element. The adhesive extends from the upper surface of the light-emitting element to a lower surface of the second light-transmissive member, the adhesive covers a side surface of the first light-transmissive member, and the adhesive is separated from the substrate.

Abstract: The generally Lambertian LED die emission is modified by an optical structure formed over the LED die that reduces the light emission along a normal axis and enhances the light emission at an angle with respect to the normal axis, producing a certain light emission profile. A phosphor layer is provided overlying the optical structure, such as in a reflective light-mixing chamber. The light emission profile results in more uniform flux from the LED die impinging across the surface of the phosphor. Some of the LED light passes through the phosphor and some of the light is converted to light of a different wavelength. The light emission profile results in more uniform color and temperature across the phosphor. The light emission profile may be created by a lens, a patterned layer over the LED die, a semi-reflective layer over the LED die, an optical sheet, or other technique.

Abstract: Disclosed are an optical member and a display device having the same. The optical member includes a first substrate, a plurality of wavelength conversion parts provided on the first substrate while being spaced apart from each other, and a sealing layer on a top surface of the wavelength conversion parts and at a lateral side of the wavelength conversion parts. Each of the wavelength conversion parts includes a host on the first substrate, and a plurality of wavelength conversion particles in the host.

Abstract: A method of forming an optical device includes forming a waveguide mask on a device precursor. The device precursor includes a waveguide positioned on a base. The method also includes forming a facet mask on the device precursor such that at least a portion of the waveguide mask is between the facet mask and the base. The method also includes removing a portion of the base while the facet mask protects a facet of the waveguide.

Abstract: A trench metal-oxide-semiconductor field effect transistor (MOSFET), in accordance with one embodiment, includes a drain region, a plurality of gate regions disposed above the drain region, a plurality of gate insulator regions each disposed about a periphery of a respective one of the plurality of gate regions, a plurality of source regions disposed in recessed mesas between the plurality of gate insulator regions, a plurality of body regions disposed in recessed mesas between the plurality of gate insulator regions and between the plurality of source regions and the drain region.

Abstract: A semiconductor device including a first lead electrode and a second lead electrode; a semiconductor stack structure disposed on the member, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a plating layer configured to bond the semiconductor stack structure to the member; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.

Abstract: A method for manufacturing a light-emitting device of the present invention includes a step in which solid-state sealing resin (17) containing a phosphor (18) and the solid-state sealing resin (17) containing a phosphor (19) are arranged in recesses in package resin (14) having LED chips placed thereon, are thereafter melted by heating, and, in addition, are cured by heating.

Abstract: The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.