Plural Emissive Devices Patents (Class 438/28)
  • Patent number: 11329449
    Abstract: A semiconductor laser device includes: a housing including: a first upward-facing surface, at least one inner lateral surface, a recess defined by at least the first upward-facing surface and the at least one inner lateral surface, a second upward-facing surface surrounding the first upward-facing surface in a top view and located above the first upward-facing surface, and at least one third upward-facing surface formed outward of the second upward-facing surface in the top view, wherein a height of the at least one third upward-facing surface is different from a height of the second upward-facing surface; at least one first wiring part located in the recess; at least one second wiring part located on the at least one third-upward facing surface and electrically connected to the at least one first wiring part thorough an insulating part of the housing; a semiconductor laser element disposed on the first upward-facing surface of the housing; and a cap fixed to the second upward-facing surface and covering the
    Type: Grant
    Filed: July 1, 2020
    Date of Patent: May 10, 2022
    Assignee: NICHIA CORPORATION
    Inventor: Hideyuki Fujimoto
  • Patent number: 11276803
    Abstract: In an embodiment an optoelectronic semiconductor device includes a semiconductor chip having a semiconductor layer sequence with an active region, a radiation exit surface arranged parallel to the active region and a plurality of side faces arranged obliquely or perpendicular to the radiation exit surface. The device further includes a contact track electrically connecting the semiconductor chip to a contact surface configured to externally contact the semiconductor device, a molding and a rear side of the semiconductor chip remote from the radiation exit surface, the rear side being free of a material of the molding, wherein one of the side faces is configured as a mounting side face for fastening of the semiconductor device, and wherein the contact track partially runs on one of the side faces.
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: March 15, 2022
    Assignee: OSRAM OLED GMBH
    Inventors: Thomas Schwarz, Frank Singer
  • Patent number: 11271047
    Abstract: Provided are an OLED display substrate (100) and an OLED display device, in the field of display device. The OLED display substrate (100) includes a plurality of pixels, and each of the pixels includes two sub-pixels. The two sub-pixels include a first sub-pixel (210) and a second sub-pixel (220). The first sub-pixel (210) includes a first light-emitting unit (211) and a second light-emitting unit (212) that are stacked; the second sub-pixel (220) includes a third light-emitting unit (213); and the first light-emitting unit (211), the second light-emitting unit (212) and the third light-emitting unit (213) are configured to emit lights with different colors. Under the same resolution, the aperture ratio of the OLED display substrate (100) may be increased. Alternatively, under the same size of sub-pixels, the resolution of the OLED display substrate (100) may be increased. Therefore, the brightness uniformity and display effect of the OLED display panel are improved.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: March 8, 2022
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Boris Kristal, Chieh Hsing Chung
  • Patent number: 11257695
    Abstract: This invention provides an apparatus for transferring at least one microdevice and a method for transferring at least one microdevice, which is characterized by utilizing the apparatus for transferring at least one microdevice having a magnetic attracting substrate with at least one magnetic attracting head or magnetic attracting position hole to attract at least one microdevice having at least one magnetic layer disposed on a temporary substrate, and transfer the at least one microdevice to the conductive bonding layer of the at least one microdevice bonding region on a target substrate thereafter.
    Type: Grant
    Filed: November 18, 2020
    Date of Patent: February 22, 2022
    Assignee: CCS TECHNOLOGY CORPORATION
    Inventors: Tung-Po Sung, Chang-Cheng Lo
  • Patent number: 11257420
    Abstract: This disclosure discloses a display including a first carrier, a second carrier, a light-emitting unit, a frame, and a protective layer. The first carrier includes a first electrode and a second electrode. The second carrier is arranged below the first carrier and includes a first connection pad and a second connection pad arranged on a side of the second carrier close to the first carrier. The light-emitting unit is arranged on the first carrier. The frame surrounds the light-emitting unit, and the protective layer covers the light-emitting unit. A distance between the first electrode and the second electrode is smaller than that between the first connection pad and the second connection pad.
    Type: Grant
    Filed: December 2, 2019
    Date of Patent: February 22, 2022
    Assignee: EPISTAR CORPORATION
    Inventor: Shao-You Deng
  • Patent number: 11195742
    Abstract: A micro device transfer apparatus and a micro device transfer method are provided. The micro device transfer apparatus comprises a stage unit including a stage where a target substrate is to be disposed, a plurality of transfer head units disposed above the stage, and a transfer head unit moving part configured to move the plurality of transfer head units, wherein, the transfer head unit comprises a carrier substrate fastening part configured to fasten a carrier substrate where a plurality of micro devices are disposed, a mask unit disposed above the carrier substrate fastening part, the mask unit comprising a mask including an opening part and a shielding part, a light emitting part disposed on the mask unit, and a housing formed around the carrier substrate fastening part, the mask unit, and the light emitting part.
    Type: Grant
    Filed: June 23, 2020
    Date of Patent: December 7, 2021
    Inventors: Heung Yeol Na, Kang Won Lee, Yoon Jae Lee
  • Patent number: 11183473
    Abstract: An embodiment is a structure comprising a substrate, a first die, and a second die. The substrate has a first surface. The first die is attached to the first surface of the substrate by first electrical connectors. The second die is attached to the first surface of the substrate by second electrical connectors. A size of one of the second electrical connectors is smaller than a size of one of the first electrical connectors.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: November 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shin-Puu Jeng, Chen-Hua Yu, Jing-Cheng Lin
  • Patent number: 11114627
    Abstract: The invention provides a manufacturing method for flexible display panel, comprising providing an array substrate, the array substrate comprising a semiconductor layer, dividing the flexible display panel into a pixel area and a bending area, adjacent to each other, the pixel area comprising the semiconductor layer; disposing a second groove in the bending area, and the second groove forming a step structure in the array substrate, the step structure extending from inside of the array substrate towards direction opposite to inner wall of the second groove; filling the second groove with an organic material, and the organic material filling the second groove forming a concave tapered groove with flat surface of the array substrate; fabricating a source, a drain, and source/drain wiring on the array substrate, the source and the drain being connected to the semiconductor layer, the source/drain wiring covering the tapered groove.
    Type: Grant
    Filed: March 8, 2018
    Date of Patent: September 7, 2021
    Assignee: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventors: Lei Yu, Songshan Li
  • Patent number: 11107946
    Abstract: The present disclosure discloses a micro-LED transfer method, a manufacturing method, device and an electronic apparatus. The transfer method comprises: in accordance with a sequence of micro-LEDs of blue, green and red, epitaxially growing micro-LEDs of two or all of the three colors on a single GaAs original substrate; epitaxially growing bumping electrodes corresponding to the micro-LEDs on a receiving substrate; bonding the micro-LEDs of the two or all of the three colors with the bumping electrodes on the receiving substrate; and removing the GaAs original substrate. The method can be used to transfer micro-LEDs of a variety of colors, in order to improve the production efficiency.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: August 31, 2021
    Assignee: Goertek Inc.
    Inventors: Xiangxu Feng, Peixuan Chen, Quanbo Zou
  • Patent number: 11087055
    Abstract: A method for characterizing a material for use in a semiconductor device and the semiconductor device using the material are described. The material has a unit cell and a crystal structure. The method includes determining a figure of merit (FOM) for the material using only forward conducting modes for the unit cell. The FOM is a resistivity multiplied by a mean free path. The FOM may be used to determine a suitability of the material for use in the semiconductor device.
    Type: Grant
    Filed: May 21, 2018
    Date of Patent: August 10, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ganesh Hegde, Harsono S. Simka, Chris Bowen
  • Patent number: 11069867
    Abstract: An electronically pure carbon nanotube ink, includes a population of semiconducting carbon nanotubes suspended in a liquid, the ink being essentially free of metallic impurities and organic material, and characterized in that when incorporated as a carbon nanotube network in a metal/carbon nanotube network/metal double diode, a nonlinear current-bias curve is obtained on application of a potential from 0.01 V to 100 V. The ink can be used to prepare air-stable n-type thin film transistors having performances similar to current thin film transistors used in flat panel displays amorphous silicon devices and high performance p-type thin film transistors with high-? dielectrics.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: July 20, 2021
    Assignee: Atom H2O, LLC
    Inventor: Huaping Li
  • Patent number: 11069663
    Abstract: A method of producing an optoelectronic semiconductor component includes A) providing at least three source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chips, B) providing a target substrate having a mounting plane configured to mount the semiconductor chips thereto, C) forming platforms on the target substrate, and D) transferring at least some of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips transferred to the target substrate maintain their relative position with respect to one another, within the types of semiconductor chips, wherein on the target substrate the semiconductor chips of each type of semiconductor chips have a specific height above the mounting plane due to the platforms so that the semiconductor chips of different types of semiconductor chips have different heights.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: July 20, 2021
    Assignee: OSRAM OLED GmbH
    Inventors: Andreas Plößl, Siegfried Herrmann, Martin Rudolf Behringer, Frank Singer, Thomas Schwarz, Alexander F. Pfeuffer
  • Patent number: 11062932
    Abstract: A method of transferring a plurality of micro devices is provided. The method includes: arranging the micro devices on a carrier substrate in a hexagonal manner; arranging a plurality of pick-up portions of a transfer head in a rectangular manner; and picking up the micro devices from the carrier substrate by the pick-up portions.
    Type: Grant
    Filed: December 8, 2019
    Date of Patent: July 13, 2021
    Assignee: MIKRO MESA TECHNOLOGY CO., LTD.
    Inventor: Li-Yi Chen
  • Patent number: 11056673
    Abstract: A covering layer (240) is formed by atomic layer deposition (ALD) and contains an insulating inorganic material. An intermediate layer (220) contains a material having a linear expansion coefficient different from that of a material of the covering layer (240). A buffer layer (230) has a surface in contact with the intermediate layer (220), that is, a first surface. The buffer layer (230) has a surface in contact with the covering layer (240), that is, a second surface. A linear expansion coefficient difference between a material of the buffer layer (230) and the inorganic material of the covering layer (240) is less than a linear expansion coefficient difference between the material of the intermediate layer (220) and the inorganic material of the covering layer (240).
    Type: Grant
    Filed: February 2, 2017
    Date of Patent: July 6, 2021
    Assignee: PIONEER CORPORATION
    Inventor: Jiro Fujimori
  • Patent number: 11041237
    Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a method for producing a vapor deposition mask and a vapor deposition mask preparation body capable of simply producing the vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a plurality of slits 15 are provided and a resin mask 20 are stacked. Openings 25 required for composing a plurality of screens are provided in the resin mask 20. The openings 25 correspond to a pattern to be produced by vapor deposition. Each of the slits 15 is provided at a position of overlapping with an entirety of at least one screen.
    Type: Grant
    Filed: February 19, 2018
    Date of Patent: June 22, 2021
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Toshihiko Takeda, Katsunari Obata, Hiromitsu Ochiai
  • Patent number: 11038089
    Abstract: A light emitting device is provided. The light emitting device includes a light emitting element, which emits blue light, and a light transmissive member having a first principal face bonded to the light emitting element and a second principal face opposite the first principal face. The light transmissive member has a light transmissive base material and wavelength conversion substances, which are contained in the base material and which absorb the light from the light emitting element and emit light. The wavelength conversion substances are localized in the base material towards the first principal face, and include a first phosphor which emits green to yellow light and a second phosphor which emits red light. The first phosphor is more localized towards the first principal face than the second phosphor. The second phosphor is a manganese-activated fluoride phosphor.
    Type: Grant
    Filed: June 10, 2020
    Date of Patent: June 15, 2021
    Assignee: NICHIA CORPORATION
    Inventors: Tadaaki Ikeda, Takuya Nakabayashi
  • Patent number: 11011555
    Abstract: Methods of fabricating integrated active-matrix light emitting pixel array based displays are provided. The methods include: forming an array of light emitting elements on a first side of a substrate, forming an array of active-matrix light emitting pixels using the array of light emitting elements, each pixel including at least one light emitting element and at least one non-volatile memory coupled to the at least one light-emitting element, forming conductive interconnects penetrating through the substrate from a second side of the substrate to the first side, and forming one or more integrated circuits on the second side, the one or more integrated circuits being conductively coupled to the array of active-matrix light-emitting pixels through the conductive interconnects. The methods can further include forming an array of active-matrix multi-color display pixels by using the array of active-matrix light emitting pixels.
    Type: Grant
    Filed: December 14, 2017
    Date of Patent: May 18, 2021
    Inventor: Shaoher Pan
  • Patent number: 10916523
    Abstract: This invention relates to integrating pixelated micro-devices into a system substrate. Defined are methods of transferring a plurality of micro-devices into a receiver substrate where a plurality of micro-devices is arranged in one or more cartridges that are aligned and bonded to a template. Further, defining the transfer process, the micro-devices may be selected, identified as defective and a transfer adjustment made based on defective micro-devices.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: February 9, 2021
    Assignee: VueReal Inc.
    Inventor: Gholamreza Chaji
  • Patent number: 10845872
    Abstract: An eye-gaze tracker wearable by a user, includes: an infrared irradiation unit to irradiate an eyeball of the user with infrared light; an infrared sensor provided on a lens, the infrared sensor being translucent at least to visible light and to output a signal when the infrared light reflected from the eyeball is incident on the infrared sensor; and processing circuitry to determine a gaze direction of the user based on the signal output from the infrared sensor.
    Type: Grant
    Filed: February 4, 2019
    Date of Patent: November 24, 2020
    Assignee: RICOH COMPANY, LTD.
    Inventors: Hiroshi Kondo, Yohei Shiren
  • Patent number: 10734555
    Abstract: A light emitting device is provided. The light emitting device includes a light emitting element, which emits blue light, and a light transmissive member having a first principal face bonded to the light emitting element and a second principal face opposite the first principal face. The light transmissive member has a light transmissive base material and wavelength conversion substances, which are contained in the base material and which absorb the light from the light emitting element and emit light. The wavelength conversion substances are localized in the base material towards the first principal face, and include a first phosphor which emits green to yellow light and a second phosphor which emits red light. The first phosphor is more localized towards the first principal face than the second phosphor. The second phosphor is a manganese-activated fluoride phosphor.
    Type: Grant
    Filed: September 18, 2018
    Date of Patent: August 4, 2020
    Assignee: NICHIA CORPORATION
    Inventors: Tadaaki Ikeda, Takuya Nakabayashi
  • Patent number: 10726768
    Abstract: Integrated active-matrix light-emitting pixel arrays based devices and methods of forming the integrated pixel arrays based devices are provided. In one aspect, a device includes a semiconductor substrate having a first side and a second side opposite to the first side and an array of active-matrix light-emitting pixels formed on the first side, each of the light-emitting pixels including at least one light-emitting element and at least one non-volatile memory coupled to the at least one light-emitting element. The at least non-volatile memory includes at least one transistor, and the at least one light-emitting element includes multiple layers epitaxially grown on a semiconductor surface of the semiconductor substrate on the first side. The device can further include scanning drivers and data drivers formed on the first side of the semiconductor substrate and coupled to the light-emitting pixels through corresponding word lines and data lines formed on the first side.
    Type: Grant
    Filed: July 9, 2019
    Date of Patent: July 28, 2020
    Inventor: Shaoher Pan
  • Patent number: 10665689
    Abstract: A preparation method for a platform-shaped active region based P-I-N diode string in a reconfigurable loop antenna includes: (a) selecting an SOI substrate; (b) etching the SOI substrate to form a platform-shaped active region; (c) depositing a P-type Si material and an N-type Si material around the platform-shaped active region by an in-situ doping process to form a P region and an N region respectively; (d) depositing a polysilicon material around the platform-shaped active region; (e) forming leads on a surface of the polysilicon material and forming PADs by photolithography, to form the P-I-N diode string. Therefore, a high-performance platform-shaped active region based P-I-N diode string suitable for a solid-state plasma antenna can be provided by an in-situ doping process.
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: May 26, 2020
    Assignee: XI'AN CREATION KEJI CO., LTD.
    Inventors: Xiaoxue Yin, Liang Zhang
  • Patent number: 10643964
    Abstract: Various embodiments of the present application are directed towards a method for forming an integrated chip in which a group III-V device is bonded to a substrate, as well as the resulting integrated chip. In some embodiments, the method includes: forming a chip including an epitaxial stack, a metal structure on the epitaxial stack, and a diffusion layer between the metal structure and the epitaxial stack; bonding the chip to a substrate so the metal structure is between the substrate and the epitaxial stack; and performing an etch into the epitaxial stack to form a mesa structure with sidewalls spaced from sidewalls of the diffusion layer. The metal structure may, for example, be a metal bump patterned before the bonding or may, for example, be a metal layer that is on an etch stop layer and that protrudes through the etch stop layer to the diffusion layer.
    Type: Grant
    Filed: July 2, 2018
    Date of Patent: May 5, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jhih-Bin Chen, Chia-Shiung Tsai, Ming Chyi Liu, Eugene Chen
  • Patent number: 10476012
    Abstract: The present disclosure provides a flexible display substrate, a manufacturing method thereof, and a display panel, belonging to the field of display technology. The manufacturing method includes: forming a release layer structure containing a plurality of charged microspheres on a carrier substrate; forming a flexible substrate and a display device on the release layer structure; and peeling off the carrier substrate and the flexible substrate, to obtain a flexible display substrate.
    Type: Grant
    Filed: May 29, 2018
    Date of Patent: November 12, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Wenbin Jia, Feifei Zhu
  • Patent number: 10461215
    Abstract: A method of manufacturing a light-emitting device includes: directly bonding a plurality of light-emitting elements to a collective light-transmissive member having a plate shape, each light-emitting element comprising a plurality of electrodes; subsequently, forming stud bumps on each electrode of each light-emitting element; subsequently, dividing the collective light-transmissive member to obtain a plurality of light-transmissive members on each of which one or more of the light-emitting elements are bonded; and subsequently, mounting the light-emitting elements on or above a mounting base by a flip-chip technique.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: October 29, 2019
    Assignee: NICHIA CORPORATION
    Inventors: Takeshi Kususe, Satoshi Shichijo, Kunihito Sugimoto
  • Patent number: 10431779
    Abstract: An organic layer deposition apparatus, a method of manufacturing an organic light-emitting display apparatus by using the same, and an organic light-emitting display apparatus manufactured using the method. The organic layer deposition apparatus includes a conveyer unit including first and second conveyer units, loading and unloading units, and a deposition unit. A transfer unit moves between the first and second conveyer units, and the substrate attached to the transfer unit is spaced from a plurality of organic layer deposition assemblies of the deposition unit while being transferred by the first conveyer unit. The organic layer deposition assemblies include common layer deposition assemblies and pattern layer deposition assemblies.
    Type: Grant
    Filed: August 12, 2016
    Date of Patent: October 1, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Su-Hwan Lee, Un-Cheol Sung, Chae-Woong Kim, Young-Mook Choi
  • Patent number: 10390408
    Abstract: An apparatus facilitating luminosity uniformity across an organic light emitting diode (OLED) device is provided. In one embodiment, the method includes: operating an organic light emitting diode (OLED) device including an anode; a semiconductor material coupled to the anode; and a cathode coupled to the semiconductor material. The method also includes dissipating heat of the OLED device in a defined pattern to increase a luminosity uniformity of the OLED device, wherein the dissipating the heat in the defined pattern comprises causing a first temperature value at a first region of the OLED device and causing a second temperature value at a second region of the OLED device.
    Type: Grant
    Filed: August 14, 2017
    Date of Patent: August 20, 2019
    Assignee: CITY UNIVERSITY OF HONG KONG
    Inventor: Wei Yan
  • Patent number: 10366910
    Abstract: The current disclosure provides a pickup and placing device including a control element, a substrate and a pickup structure. The substrate has an upper surface and a lower surface opposite to each other and a plurality of conductive via structures, wherein the conductive via structures are electrically connected to the control element. The pickup structure includes a plurality of pickup heads used for picking up or placing a plurality of light emitting diodes respectively. The pickup structure is disposed on the lower surface of the substrate or disposed in the substrate and extended outside the substrate, and the substrate is disposed between the control element and the pickup structure, wherein the pickup heads are electrically connected to the conductive via structures.
    Type: Grant
    Filed: May 24, 2017
    Date of Patent: July 30, 2019
    Assignee: Innolux Corporation
    Inventors: Tung-Kai Liu, Tsau-Hua Hsieh, Bo-Feng Chen, Hui-Chieh Wang
  • Patent number: 10304824
    Abstract: A manufacturing method for an AlAs—Ge—AlAs structure based plasma p-i-n diode in a multilayered holographic antenna is provided. The manufacturing method includes: selecting a GeOI substrate and disposing an isolation region in the GeOI substrate; etching the GeOI substrate to form a P-type trench and an N-type trench; depositing AlAs materials in the P-type trench and the N-type trench and performing ion implantation into the AlAs materials in the P-type trench and N-type trench to form a P-type active region and an N-type active region; and forming leads on surfaces of the P-type active region and the N-type active region to obtain the AlAs—Ge—AlAs structure based plasma p-i-n diode. Therefore, a high-performance Ge based plasma p-i-n diode suitable for forming a solid plasma antenna can be provided by using a deep trench isolation technology and an ion implantation process.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: May 28, 2019
    Assignee: XI'AN CREATION KEJI CO., LTD.
    Inventors: Xiaoxue Yin, Liang Zhang
  • Patent number: 10290769
    Abstract: A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer; a first electrode including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.
    Type: Grant
    Filed: January 16, 2018
    Date of Patent: May 14, 2019
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Mi Hee Lee, Chang Yeon Kim, Ju Yong Park, Jong Kyun You, Joon Hee Lee
  • Patent number: 10270019
    Abstract: An optoelectronic semiconductor chip, an optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment the chip includes a main body including a carrier having a top, a bottom opposite the top and side faces connecting the bottom with the top and a semiconductor layer sequence arranged on the top of the carrier, wherein the semiconductor layer sequence is configured to emit or absorb electromagnetic radiation and two contact faces arranged on the semiconductor layer sequence. The chip further includes two contact elements contacting the contact faces, wherein the contact elements include conductor tracks which are guided from the contact faces over edges of the main body on the side faces of the carrier.
    Type: Grant
    Filed: March 29, 2016
    Date of Patent: April 23, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Siegfried Herrmann
  • Patent number: 10177141
    Abstract: A preparation method for a SiGe based plasma p-i-n diode string for a sleeve antenna is provided. The preparation method includes: selecting a SiGeOI substrate with a certain crystal orientation and forming isolation regions on the SiGeOI substrate; etching the substrate to form P-type trenches and N-type trenches, depths of the P-type trenches and the N-type trenches each being smaller than a thickness of a top SiGe layer of the substrate; filling the P-type trenches and the N-type trenches and forming P-type active regions and N-type active regions in the top SiGe layer of the substrate by an ion implantation process; and forming leads on the substrate so as to obtain the heterogeneous SiGe based plasma p-i-n diode. Therefore, a high-performance heterogeneous SiGe based plasma p-i-n diode suitable for forming a solid-state plasma antenna is prepared by using a deep trench isolation technology and the ion implantation process.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: January 8, 2019
    Assignee: XI'AN CREATION KEJI CO., LTD.
    Inventors: Liang Zhang, Yu Zuo
  • Patent number: 10177016
    Abstract: A pre-screening method, manufacturing method, device and electronic apparatus of micro-LED. The method for pre-screening defect micro-LEDs comprises: obtaining a defect pattern of defect micro-LEDs on a laser-transparent substrate (S6100); and irradiating the laser-transparent substrate with laser from the laser-transparent substrate side in accordance with the defect pattern (S6200), to lift-off the defect micro-LEDs from the laser-transparent substrate.
    Type: Grant
    Filed: August 18, 2015
    Date of Patent: January 8, 2019
    Assignee: Goertek Inc.
    Inventors: Quanbo Zou, Zhe Wang
  • Patent number: 10163736
    Abstract: An electroluminescent light source is provided with an adjusted or adjustable luminance parameter wherein: the source includes a set of segments, each segment comprising a discrete electroluminescent element or multiple discrete electroluminescent elements connected permanently to one another and having an emission area; at least a portion of the segments has different emission areas; the source comprising means for controlling at least a portion of the segments.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: December 25, 2018
    Assignee: ALEDIA
    Inventor: Xavier Hugon
  • Patent number: 10163869
    Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LED at wafer level comprises: temporarily bonding micro-LEDs on a laser-transparent original substrate onto a carrier substrate via a first bonding layer; irradiating the original substrate with laser, to lift-off selected micro-LEDs; performing a partial release on the first bonding layer, to transfer the selected micro-LEDs to the carrier substrate; temporarily bonding the micro-LEDs on the carrier substrate onto a transfer head substrate via a second bonding layer; performing a full release on the first bonding layer, to transfer the micro-LEDs to the transfer head substrate; bonding the micro-LEDs on the transfer head substrate onto a receiving substrate; and removing the transfer head substrate by releasing the second bonding layer, to transfer the micro-LEDs to the receiving substrate.
    Type: Grant
    Filed: October 20, 2015
    Date of Patent: December 25, 2018
    Assignee: GOERTEK, INC.
    Inventors: Quanbo Zou, Zhe Wang
  • Patent number: 10153455
    Abstract: A manufacturing method of a display device in an embodiment according to the present invention, the method includes forming a terminal electrode in a terminal part of a first substrate, forming a pixel electrode corresponding to each pixel in a pixel part of the first substrate, forming a first intermediate layer in a region including the terminal electrode of the terminal part, forming an organic layer above the pixel electrode in the pixel part, forming a counter electrode layer above the first substrate including the pixel part and the terminal part, forming a passivation layer above the counter electrode layer, arranging a second substrate opposing the pixel part and bonding the first substrate and the second substrate using a sealing member enclosing the pixel part, and removing the first intermediate layer, the counter electrode layer and the passivation layer in the terminal part.
    Type: Grant
    Filed: February 23, 2017
    Date of Patent: December 11, 2018
    Assignee: Japan Display Inc.
    Inventors: Mitsugu Tamekawa, Shiro Sumita
  • Patent number: 10011742
    Abstract: Translucent multiphase adhesive comprising at least one continuous phase and dispersed domains, the at least one continuous phase having a refractive index of more than 1.45 and a permeation rate for water vapor of less than 100 g/m2, and the disperse domains being present in a size range of 0.1 ?m to 50 ?m and being included in a weight fraction of not more than 10 wt % in the adhesive, characterized in that the disperse domains are polymeric in nature and have a water vapor permeation rate of less than 100 g/m2d and a refractive index of less than 1.45.
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: July 3, 2018
    Assignee: TESA SE
    Inventors: Klaus Keite-Telgenbüscher, Julia Rompf, Janika Stolze
  • Patent number: 9978997
    Abstract: The present disclosure relates to an organic light emitting display device including a substrate having an outer part and a display part, a driving thin film transistor on each of a plurality of pixel regions within the display part of the substrate, a pixel electrode on each pixel region of the display part, an organic light emitting unit on each pixel region of the display part to emit light, a common electrode on the organic light emitting unit and a bank layer to apply a signal to the organic light emitting layer, and a first passivation layer, an organic insulating layer and a second passivation layer on the outer part and the display part, wherein the first passivation layer and the second passivation layer are removed from the outermost region of the outer part, so that the substrate is exposed to the outside.
    Type: Grant
    Filed: December 2, 2016
    Date of Patent: May 22, 2018
    Assignee: LG Display Co., Ltd.
    Inventors: JunYoung Kwon, SungHun Kim, MiSo Kim
  • Patent number: 9966516
    Abstract: A method for producing a lighting device is provided. According to the method, a plurality of semiconductor emitters arranged alongside one another are embedded in a light-transmissive filling compound apart from a side having their electrical connections, trenches are introduced into the light-transmissive filling compound at the side having the electrical connections between at least two semiconductor emitters, the side of the light-transmissive filling compound having the electrical connections, including the electrical connections, is covered with a dielectric material, electrical lines are led through the dielectric material to the electrical connections, and at least some of the trenches are severed.
    Type: Grant
    Filed: July 20, 2015
    Date of Patent: May 8, 2018
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Philipp Schlosser, Andreas Waldschik
  • Patent number: 9837639
    Abstract: According to one or more embodiments of the present invention, a display apparatus includes: a substrate; a display unit which is formed on the substrate and includes an emission area and a non-emission area; a first coating layer which is formed on the display unit and has an uneven area formed on the emission area; a first blocking layer which is formed on the non-emission area of the first coating layer; and a second blocking layer which is formed on the first blocking layer and prevents reflection of external light.
    Type: Grant
    Filed: March 9, 2017
    Date of Patent: December 5, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Hyun-Ho Kim, Soo-Youn Kim, Seung-Yong Song, Sang-Hwan Cho, Jin-Koo Kang, Seung-Hun Kim, Cheol Jang, Chung-Sock Choi, Sang-Hyun Park
  • Patent number: 9768366
    Abstract: A wafer-level process for manufacturing solid state lighting (“SSL”) devices using large-diameter preformed metal substrates is disclosed. A light emitting structure is formed on a growth substrate, and a preformed metal substrate is bonded to the light emitting structure opposite the growth substrate. The preformed metal substrate can be bonded to the light emitting structure via a metal-metal bond, such as a copper-copper bond, or with an inter-metallic compound bond.
    Type: Grant
    Filed: April 25, 2016
    Date of Patent: September 19, 2017
    Assignee: Micron Technology, Inc.
    Inventor: Vladimir Odnoblyudov
  • Patent number: 9736907
    Abstract: An apparatus facilitating luminosity uniformity across an organic light emitting diode (OLED) device is provided. In one embodiment, the method includes: operating an organic light emitting diode (OLED) device including an anode; a semiconductor material coupled to the anode; and a cathode coupled to the semiconductor material. The method also includes dissipating heat of the OLED device in a defined pattern to increase a luminosity uniformity of the OLED device, wherein the dissipating the heat in the defined pattern comprises causing a first temperature value at a first region of the OLED device and causing a second temperature value at a second region of the OLED device.
    Type: Grant
    Filed: August 21, 2014
    Date of Patent: August 15, 2017
    Assignee: CITY UNIVERSITY OF HONG KONG
    Inventor: Wei Yan
  • Patent number: 9685428
    Abstract: A light-emitting array module includes a circuit substrate, a light-emitting unit, and an encapsulation body. The light-emitting unit includes a plurality of light-emitting groups arranged in matrix on the circuit substrate. The encapsulation body disposed on the circuit substrate for encapsulating the light-emitting groups. The encapsulation body includes a plurality of encapsulation portions and a plurality of thin connection portions. Therefore, light beams generated by the light-emitting group is transformed into an obvious single point light source without halation due to the design of “each thin connection portion connected between the two adjacent encapsulation portions to separate the two adjacent encapsulation portions from each other by a predetermined distance”, so that the color resolution of the light-emitting array module is increased. In addition, the present disclosure further provides a display device including the light-emitting array module.
    Type: Grant
    Filed: February 26, 2016
    Date of Patent: June 20, 2017
    Assignee: HARVATEK CORPORATION
    Inventor: Jen-Hung Chang
  • Patent number: 9647040
    Abstract: The present invention discloses a touch display device and a manufacturing method thereof, the display device comprising: an OLED display layer disposed on a lower substrate; an upper substrate; an air layer formed between the upper substrate and the lower substrate; and a touch module, disposed above the OLED display layer, wherein the touch module comprises: a first sensing circuit layer and a second sensing circuit layer, further wherein the first sensing circuit layer and the second sensing circuit layer are spaced and the distance between them is more than 2 ?m. The display device can reduce interference in detection circuit caused by coupling capacitance formed between the sensing circuit layers thereby improving accuracy of touch detection.
    Type: Grant
    Filed: March 13, 2012
    Date of Patent: May 9, 2017
    Assignee: TPK TOUCH SOLUTIONS INC.
    Inventor: Chen-Yu Liu
  • Patent number: 9502437
    Abstract: A method of manufacturing an array substrate, an array substrate and a display device are provided. The method of manufacturing the array substrate includes: forming a pattern of a gate metal layer including a gate line and a gate electrode and preserving photoresist at a position on the pattern of the gate metal layer corresponding to a gate lead hole; sequentially forming a gate insulating thin film, a semiconductor thin film and a source/drain metal thin film; removing the photoresist preserved at the position on the pattern of the gate metal layer corresponding to the gate lead hole, and forming the gate lead hole; forming a pattern of a source/drain metal layer including a source electrode, a drain electrode and a data line and a semiconductor layer; and forming a pattern including a pixel electrode layer and a channel.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: November 22, 2016
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Wei Qin, Jiayang Zhao, Yuanbo Zhang, Xiangxiang Zou
  • Patent number: 9502610
    Abstract: A method for manufacturing a light emitting device, includes a first step of mounting a light emitting element on a support base with a bump; and a second step of clamping the support base and the light emitting element and pressing between a lower molding die and an upper molding die to plastically deform the bump, and injecting the compound of a cover member into a mold cavity between the lower molding die and the upper molding die and curing the compound to form the cover member that covers at least a lower surface of the light emitting element after the first step.
    Type: Grant
    Filed: November 5, 2015
    Date of Patent: November 22, 2016
    Assignee: NICHIA CORPORATION
    Inventor: Masafumi Kuramoto
  • Patent number: 9257481
    Abstract: An LED array includes: a first LED unit having a first active layer and a first side; a second LED unit having a second active layer and a second side facing the first side; a trench separating the first LED unit from the second LED unit; and a light-guiding structure formed between the first LED unit and the second LED unite for guiding the light emitted by the first active layer and the second active layer away from the LED array.
    Type: Grant
    Filed: November 26, 2012
    Date of Patent: February 9, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Tsung Hsien Yang, Yi Tang Lai, Yao Ning Chan
  • Patent number: 9224700
    Abstract: A package of an environmental sensitive element including a flexible substrate, an environmental sensitive element, at least one flexible sacrificial layer and a packaging structure is provided. The environmental sensitive element is disposed on the flexible substrate. The flexible sacrificial layer is disposed on the environmental sensitive element, wherein the environmental sensitive element includes a plurality of first thin films and the flexible sacrificial layer includes a plurality of second thin films. The bonding strength between two adjacent second thin films is equal to or lower than the bonding strength between two adjacent first thin films. Further, the packaging structure covers the environmental sensitive element and the flexible sacrificial layer.
    Type: Grant
    Filed: June 4, 2015
    Date of Patent: December 29, 2015
    Assignee: Industrial Technology Research Institute
    Inventor: Kuang-Jung Chen
  • Patent number: 9214610
    Abstract: A lighting apparatus includes a first doped semiconductor layer, a light-emitting layer disposed over the first doped semiconductor layer, a second doped semiconductor layer disposed over the light-emitting layer, a first conductive terminal, a second conductive terminal, and a photo-conversion layer. The second doped semiconductor layer has a different type of conductivity than the first doped semiconductor layer. The first conductive terminal and the second conductive terminal each are disposed below the first doped semiconductor layer. The photo-conversion layer is disposed over the second doped semiconductor layer and on side surfaces of the first and second doped semiconductor layers and the light-emitting layer. A bottommost surface of the photo-conversion layer is located closer to the second doped semiconductor layer than bottom surfaces of the first and second conductive terminals.
    Type: Grant
    Filed: June 16, 2014
    Date of Patent: December 15, 2015
    Assignee: TSMC SOLID STATE LIGHTING LTD.
    Inventors: Chi-Xiang Tseng, Hsiao-Wen Lee, Min-Sheng Wu, Tien-Min Lin
  • Patent number: 9209366
    Abstract: The invention relates to an organic optoelectronic device which is protected from ambient air by a sealed encapsulation structure of the type including at least one thin layer. The device includes a substrate; at least one light-emitting unit deposited on the substrate, incorporating internal electrodes and external electrodes defining an active zone and, between the electrodes, a stack of organic films; and a sealed encapsulation structure having one or more thin layers including at least one inorganic layer placed on top of the light-emitting unit and encasing same laterally. The device also includes a pre-encapsulation structure located between the external electrode and the encapsulation structure and which includes a buffer layer covering the external electrode and contains a heterocyclic organometallic complex having a glass transition temperature above 80° C., and a barrier layer covering the buffer layer and contains a silicon oxide SiOx, wherein x is 0<x<2.
    Type: Grant
    Filed: July 4, 2012
    Date of Patent: December 8, 2015
    Assignee: Commissariat A L'Energie Atomique Et Aux Energies Alternatives
    Inventors: Tony Maindron, Hani Kanaan