Abstract: A display includes a plurality of first wirings which are provided on a first layer and each of which is arranged parallel to a first direction in a first area, and which are arranged on a second layer in a second area; a second wiring which is provided in the first layer in the first area and which is provided on a layer in the second area; and a third wiring which is provided on the first layer and arranged between the first wirings in the first area and which is arranged to intersect with first wirings in the second area. The first wirings is arranged to be inclined to the same side in the first direction in the second area. The second wiring is arranged to intersect with a portion of the plurality of first wirings in a plan view, in the second area.

Abstract: A stretchable display module and a manufacturing method thereof are provided. The stretchable display module includes a display layer including a plurality of display islands arranged and spaced apart from each other, wherein two of the adjacent display islands are electrically connected by a connecting wire; a transparent adhesive layer including a filling adhesive layer filled in a spacing region between the display islands, a first adhesive layer disposed on a surface of the display layer opposite an emitting direction of the display layer, and a second adhesive layer disposed on a surface of the display layer in the emitting direction.

Abstract: A display device includes a substrate, a plurality of pixels above the substrate, each of the pixels including a light emitting element, a display region including the plurality of pixels, a thin film transistor which each of the plurality of pixels includes, a protective film including a first inorganic insulating material and located between the thin film transistor and the light emitting element, a sealing film including a second inorganic insulating material and covering the light emitting element, and at least one through hole located in the display region and passing through the substrate, the protective film, and the sealing film, wherein the second inorganic insulating material is in direct contact with the protective film in a first region located between the through hole and the pixels.

Abstract: A lighting apparatus includes an elongate substrate, a supply rail disposed on one surface of the substrate, and first and second ground rails disposed on the other surface. SSL packages are disposed parallel to the longitudinal axis of the substrate and between the first and second ground rails. Each package has SSL elements disposed on a first side and pairs of contact pads disposed on a second side. The SSL packages are serially coupled from the first package to the last package. One contact pad of each pair of the contact pads of the first package is coupled to the supply rail through the substrate, one contact pad of a first pair of the pairs of contact pads of the last package is coupled to the first ground rail at the first surface of the substrate, and one contact pad of a second pair of the pairs of contact pads of the last package is coupled to the second ground rail at the first surface of the substrate.

Abstract: A lighting device comprises a support comprising a mounting section having at least one mounting face. The at least one mounting face has an arrangement direction and comprising at least two contact sections along the arrangement direction. The support further comprises a body section adjacent to the mounting section. The support further comprises a plurality of layered conductors connecting the body section to the at least one mounting face. The lighting device comprises at least one light-emitting element mounted along the arrangement direction of the at least one mounting face such that the at least one light-emitting element is in electrical contact to the at least two contact sections.

Abstract: A flexible display panel, a method for fabricating the same, and a display device are provided. A protruding structure located is formed in a via-hole area on a flexible base substrate so that both the protruding structure, and the portions of an organic light-emitting functional film and a top electrode layer covering the protruding structure can be removed. Thereafter an encapsulation thin film covering the patterns of the organic light-emitting functional film and the top electrode layer is formed. After the encapsulation thin film is formed, the step of removing the pattern of the encapsulation thin film in the via-hole area can be further performed to expose the flexible base substrate in the via-hole area, and after the flexible base substrate in the via-hole area is removed, a via-hole can be formed in the flexible base substrate.

Abstract: An organic light emitting display device includes: a substrate including: pixel regions; connection regions between adjacent pixel regions from among the pixel regions, respectively; and a region having a through-opening, the region being defined by the adjacent pixel regions, and the connection regions respectively between the adjacent pixel regions; a sub-pixel structure on the substrate at each of the pixel regions; and an organic pattern on a side wall of the substrate, the side wall being adjacent to the through-opening.

Abstract: Disclosed are a display substrate, a method for manufacturing the same, and a display device. The display substrate includes: a base substrate, and a multilayered functional film layer on the base substrate. The multilayered functional film layer is provided with an opening penetrating through the multilayered functional film layer. A light-shielding film is on a side wall of the opening.

Abstract: To provide a display device having a reduced non-display area, the display device including: a substrate including a display area, the display area including a first area and a second area; a first pixel electrode in the first area, and a second pixel electrode in the second area; a pixel-defining layer on the substrate and including a first opening and a second opening, the first opening exposing at least a portion of the first pixel electrode, and the second opening exposing at least a portion of the second pixel electrode; a first intermediate layer on the at least a portion of the first pixel electrode, and a second intermediate layer on the at least a portion of the second pixel electrode; a first opposite electrode on the first intermediate layer; and a second opposite electrode on the first opposite electrode and the second intermediate layer.

Abstract: Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.

Abstract: An organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. Voltage may be applied to the anode of each pixel to control the magnitude of emitted light. The conductivity of the OLED layers may allow leakage current to pass between neighboring anodes in the display. To reduce leakage current and the accompanying cross-talk in a display, the pixel definition layer may disrupt continuity of the OLED layers. The pixel definition layer may have an undercut to disrupt continuity of some but not all of the OLED layers. The undercut may be defined by three discrete portions of the pixel definition layer. The undercut may result in a void that is interposed between different portions of the OLED layers to break a leakage path formed by the OLED layers.

Abstract: Disclosed is a micro light-emitting component, a micro light-emitting diode, and a transfer layer. The transfer layer has a recess for receiving the micro light-emitting diode to permit the micro light-emitting diode to be retained by the transfer layer, and is transformable from a first state, in which the transfer layer is deformed by the micro light-emitting diode to form the recess, to a second state, in which the micro light-emitting diode received in the recess is retained by the transfer layer. Also disclosed are micro light-emitting component matrix and a method for manufacturing the micro light-emitting component matrix.

Abstract: A light source assembly, includes: a substrate; a first light-blocking pattern disposed on the substrate; a first light-emitting unit disposed on the first light-blocking pattern; and an encapsulation portion disposed on the substrate and enveloping the first light-blocking pattern and the first light-emitting unit; wherein an outer surface of the encapsulation portion is a curved surface. A display module and a method of manufacturing the light source module are further provided.

Abstract: An electronic device comprises a semiconductor die, a layer stack disposed on the semiconductor die and comprising one or more functional layers, wherein the layer stack comprises a protection layer which is an outermost functional layer of the layer stack, and a sacrificial layer disposed on the protection layer, wherein the sacrificial layer comprises a material which decomposes or becomes volatile at a temperature between 100° and 400° C.

Abstract: A lighting apparatus includes a flexible elongate substrate, a supply rail disposed on one surface of the substrate, and first and second ground rails disposed on the other surface. Groups of SSL packages are disposed parallel to the longitudinal axis of the substrate and between the first and second ground rails. Each package has SSL elements disposed on a first side and pairs of contact pads disposed on a second side. The SSL packages in each group are serially coupled from the first package to the last package of the group. One contact pad of each pair of the contact pads of the first package of each group is coupled to the supply rail through the substrate, one contact pad of a first pair of the pairs of contact pads of the last package of each group is coupled to the first ground rail at the first surface of the substrate, and one contact pad of a second pair of the pairs of contact pads of the last package of each group is coupled to the second ground rail at the first surface of the substrate.

Abstract: The present disclosure provides an organic light emitting diode (OLED) substrate and a manufacturing method thereof, and a display device. The OLED substrate includes: a base substrate; a pixel defining layer on the base substrate, the pixel defining layer including pixel defining patterns for defining sub-pixel units, each sub-pixel unit being defined between adjacent two of the pixel defining patterns; and an organic light emitting layer on a side of the pixel defining layer away from the base substrate, the organic light emitting layer including a first portion in each sub-pixel unit and a second portion on each pixel defining pattern. Each pixel defining pattern is provided with a groove structure therein, and part of the second portion of the organic light emitting layer in the groove structure and the other part of the second portion of the organic light emitting layer are spaced apart from each other.

Abstract: A method of fabricating a display device includes forming a circuit layer on a base layer, forming a first preliminary electrode and a second preliminary electrode on the circuit layer, forming a photoresist layer on the first preliminary electrode and the second preliminary electrode, patterning the photoresist layer to form a photoresist pattern, treating a region of each of the first preliminary electrode and the second preliminary electrode to form a first electrode and a second electrode having regions of lower and higher electrical resistance, and disposing a light-emitting element on the first electrode and the second electrode at regions having lower electrical resistance.

Abstract: A method includes: bonding a surface of a first wafer on a side having a semiconductor layer to a surface of a second wafer on a side having a first electrode to electrically connect the semiconductor layer and the first electrode; etching a silicon substrate such that a first portion of the silicon substrate remains in a region overlapping with the first electrode in a plan view; etching the semiconductor layer using the first portion as a mask such that a portion of the semiconductor layer between the first portion and the first electrode remains as at least one light-emitting portion; forming a resin layer to cover a lateral surface of the first portion and a lateral surface of the light-emitting portion with the resin layer; removing the first portion to expose the light-emitting portion; and forming a light-transmissive electrically conductive film on or above the light-emitting portion.

Abstract: A method of transferring a plurality of micro LEDs formed on a substrate including transferring the micro LEDs onto a first carrier substrate having a first adhesive material layer, reducing an adhesiveness of the first adhesive material layer by curing the first adhesive material layer, transferring the micro LEDs from the first carrier substrate onto a second carrier substrate having a second adhesive material layer, bonding at least a portion of the micro LEDs on the second carrier substrate to pads of a circuit board using a metal bonding layer, and separating the second carrier substrate from the micro LEDs bonded onto the circuit board.

Abstract: Provided are a method of manufacturing a nanoscale light-emitting diode (LED) electrode assembly having improved electrical contacts, and more particularly, a nanoscale LED electrode assembly having improved electrical contacts and capable of increasing conductivity between electrodes and nanoscale LED devices and decreasing contact resistance, and a method of manufacturing the same.

Abstract: A light-emitting structure, a backlight module, a display module, and a display device are provided. The light-emitting structure includes a circuit substrate, including a first surface and a second surface sequentially arranged along a light-exiting direction of the light-emitting structure. The circuit substrate also includes a light-transparent substrate and a wiring structure located on a side of the light-transparent substrate in a thickness direction. The light-emitting structure also includes a plurality of light-emitting elements, arranged in an array on one of the first surface or the second surface of the circuit substrate. The plurality of the light-emitting elements is electrically connected to the wiring structure. The light-emitting structure also includes a heat sink, located on a side of the first surface of the circuit substrate. The heat sink is configured for dissipating heat generated by the plurality of the light-emitting elements.

Abstract: A method of aligning micro light emitting elements includes supplying the plurality of micro light emitting elements on a substrate including a plurality of grooves having different shapes, the plurality of micro light emitting elements being configured to be inserted exclusively and respectively into the plurality of grooves; respectively inserting the plurality of micro light emitting elements into the plurality of grooves; and aligning the plurality of micro light emitting elements, wherein at least one groove of the plurality of grooves has a shape that is different from a shape of a respective micro light emitting element inserted into the at least one groove.

Abstract: A micro light-emitting device includes a support structure with a cavity and at least one micro light-emitting element that includes a semiconductor structure accommodated by the cavity, at least one bridge connection member disposed on the semiconductor structure to interconnect the semiconductor structure and the support structure, and a protruding contact member disposed on at least one of the semiconductor structure and the bridge connection member and protruding therefrom to be configured to contact with a transfer means. The device is configured to contact with the transfer means at the protruding contact member of the element. A transfer method using the device is also disclosed.

Abstract: A light emitting device including a light emitting layer that is provided between a first face and a second face, a first electrode that is provided on the first face and is electrically coupled to the light emitting layer, a second electrode that is provided on the second face and is electrically coupled to the light emitting layer, and a non-selected electrode that is provided on the first face and is in a state not electrically coupled to a potential supply source.

Abstract: Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer.

Abstract: A semiconductor laser device includes: a housing including: a first upward-facing surface, at least one inner lateral surface, a recess defined by at least the first upward-facing surface and the at least one inner lateral surface, a second upward-facing surface surrounding the first upward-facing surface in a top view and located above the first upward-facing surface, and at least one third upward-facing surface formed outward of the second upward-facing surface in the top view, wherein a height of the at least one third upward-facing surface is different from a height of the second upward-facing surface; at least one first wiring part located in the recess; at least one second wiring part located on the at least one third-upward facing surface and electrically connected to the at least one first wiring part thorough an insulating part of the housing; a semiconductor laser element disposed on the first upward-facing surface of the housing; and a cap fixed to the second upward-facing surface and covering the

Abstract: In an embodiment an optoelectronic semiconductor device includes a semiconductor chip having a semiconductor layer sequence with an active region, a radiation exit surface arranged parallel to the active region and a plurality of side faces arranged obliquely or perpendicular to the radiation exit surface. The device further includes a contact track electrically connecting the semiconductor chip to a contact surface configured to externally contact the semiconductor device, a molding and a rear side of the semiconductor chip remote from the radiation exit surface, the rear side being free of a material of the molding, wherein one of the side faces is configured as a mounting side face for fastening of the semiconductor device, and wherein the contact track partially runs on one of the side faces.

Abstract: Provided are an OLED display substrate (100) and an OLED display device, in the field of display device. The OLED display substrate (100) includes a plurality of pixels, and each of the pixels includes two sub-pixels. The two sub-pixels include a first sub-pixel (210) and a second sub-pixel (220). The first sub-pixel (210) includes a first light-emitting unit (211) and a second light-emitting unit (212) that are stacked; the second sub-pixel (220) includes a third light-emitting unit (213); and the first light-emitting unit (211), the second light-emitting unit (212) and the third light-emitting unit (213) are configured to emit lights with different colors. Under the same resolution, the aperture ratio of the OLED display substrate (100) may be increased. Alternatively, under the same size of sub-pixels, the resolution of the OLED display substrate (100) may be increased. Therefore, the brightness uniformity and display effect of the OLED display panel are improved.

Abstract: This disclosure discloses a display including a first carrier, a second carrier, a light-emitting unit, a frame, and a protective layer. The first carrier includes a first electrode and a second electrode. The second carrier is arranged below the first carrier and includes a first connection pad and a second connection pad arranged on a side of the second carrier close to the first carrier. The light-emitting unit is arranged on the first carrier. The frame surrounds the light-emitting unit, and the protective layer covers the light-emitting unit. A distance between the first electrode and the second electrode is smaller than that between the first connection pad and the second connection pad.

Abstract: This invention provides an apparatus for transferring at least one microdevice and a method for transferring at least one microdevice, which is characterized by utilizing the apparatus for transferring at least one microdevice having a magnetic attracting substrate with at least one magnetic attracting head or magnetic attracting position hole to attract at least one microdevice having at least one magnetic layer disposed on a temporary substrate, and transfer the at least one microdevice to the conductive bonding layer of the at least one microdevice bonding region on a target substrate thereafter.

Abstract: A micro device transfer apparatus and a micro device transfer method are provided. The micro device transfer apparatus comprises a stage unit including a stage where a target substrate is to be disposed, a plurality of transfer head units disposed above the stage, and a transfer head unit moving part configured to move the plurality of transfer head units, wherein, the transfer head unit comprises a carrier substrate fastening part configured to fasten a carrier substrate where a plurality of micro devices are disposed, a mask unit disposed above the carrier substrate fastening part, the mask unit comprising a mask including an opening part and a shielding part, a light emitting part disposed on the mask unit, and a housing formed around the carrier substrate fastening part, the mask unit, and the light emitting part.

Abstract: An embodiment is a structure comprising a substrate, a first die, and a second die. The substrate has a first surface. The first die is attached to the first surface of the substrate by first electrical connectors. The second die is attached to the first surface of the substrate by second electrical connectors. A size of one of the second electrical connectors is smaller than a size of one of the first electrical connectors.

Abstract: The invention provides a manufacturing method for flexible display panel, comprising providing an array substrate, the array substrate comprising a semiconductor layer, dividing the flexible display panel into a pixel area and a bending area, adjacent to each other, the pixel area comprising the semiconductor layer; disposing a second groove in the bending area, and the second groove forming a step structure in the array substrate, the step structure extending from inside of the array substrate towards direction opposite to inner wall of the second groove; filling the second groove with an organic material, and the organic material filling the second groove forming a concave tapered groove with flat surface of the array substrate; fabricating a source, a drain, and source/drain wiring on the array substrate, the source and the drain being connected to the semiconductor layer, the source/drain wiring covering the tapered groove.

Abstract: The present disclosure discloses a micro-LED transfer method, a manufacturing method, device and an electronic apparatus. The transfer method comprises: in accordance with a sequence of micro-LEDs of blue, green and red, epitaxially growing micro-LEDs of two or all of the three colors on a single GaAs original substrate; epitaxially growing bumping electrodes corresponding to the micro-LEDs on a receiving substrate; bonding the micro-LEDs of the two or all of the three colors with the bumping electrodes on the receiving substrate; and removing the GaAs original substrate. The method can be used to transfer micro-LEDs of a variety of colors, in order to improve the production efficiency.

Abstract: A method for characterizing a material for use in a semiconductor device and the semiconductor device using the material are described. The material has a unit cell and a crystal structure. The method includes determining a figure of merit (FOM) for the material using only forward conducting modes for the unit cell. The FOM is a resistivity multiplied by a mean free path. The FOM may be used to determine a suitability of the material for use in the semiconductor device.

Abstract: An electronically pure carbon nanotube ink, includes a population of semiconducting carbon nanotubes suspended in a liquid, the ink being essentially free of metallic impurities and organic material, and characterized in that when incorporated as a carbon nanotube network in a metal/carbon nanotube network/metal double diode, a nonlinear current-bias curve is obtained on application of a potential from 0.01 V to 100 V. The ink can be used to prepare air-stable n-type thin film transistors having performances similar to current thin film transistors used in flat panel displays amorphous silicon devices and high performance p-type thin film transistors with high-? dielectrics.

Abstract: A method of producing an optoelectronic semiconductor component includes A) providing at least three source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chips, B) providing a target substrate having a mounting plane configured to mount the semiconductor chips thereto, C) forming platforms on the target substrate, and D) transferring at least some of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips transferred to the target substrate maintain their relative position with respect to one another, within the types of semiconductor chips, wherein on the target substrate the semiconductor chips of each type of semiconductor chips have a specific height above the mounting plane due to the platforms so that the semiconductor chips of different types of semiconductor chips have different heights.

Abstract: A method of transferring a plurality of micro devices is provided. The method includes: arranging the micro devices on a carrier substrate in a hexagonal manner; arranging a plurality of pick-up portions of a transfer head in a rectangular manner; and picking up the micro devices from the carrier substrate by the pick-up portions.

Abstract: A covering layer (240) is formed by atomic layer deposition (ALD) and contains an insulating inorganic material. An intermediate layer (220) contains a material having a linear expansion coefficient different from that of a material of the covering layer (240). A buffer layer (230) has a surface in contact with the intermediate layer (220), that is, a first surface. The buffer layer (230) has a surface in contact with the covering layer (240), that is, a second surface. A linear expansion coefficient difference between a material of the buffer layer (230) and the inorganic material of the covering layer (240) is less than a linear expansion coefficient difference between the material of the intermediate layer (220) and the inorganic material of the covering layer (240).

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a method for producing a vapor deposition mask and a vapor deposition mask preparation body capable of simply producing the vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a plurality of slits 15 are provided and a resin mask 20 are stacked. Openings 25 required for composing a plurality of screens are provided in the resin mask 20. The openings 25 correspond to a pattern to be produced by vapor deposition. Each of the slits 15 is provided at a position of overlapping with an entirety of at least one screen.

Abstract: A light emitting device is provided. The light emitting device includes a light emitting element, which emits blue light, and a light transmissive member having a first principal face bonded to the light emitting element and a second principal face opposite the first principal face. The light transmissive member has a light transmissive base material and wavelength conversion substances, which are contained in the base material and which absorb the light from the light emitting element and emit light. The wavelength conversion substances are localized in the base material towards the first principal face, and include a first phosphor which emits green to yellow light and a second phosphor which emits red light. The first phosphor is more localized towards the first principal face than the second phosphor. The second phosphor is a manganese-activated fluoride phosphor.

Abstract: Methods of fabricating integrated active-matrix light emitting pixel array based displays are provided. The methods include: forming an array of light emitting elements on a first side of a substrate, forming an array of active-matrix light emitting pixels using the array of light emitting elements, each pixel including at least one light emitting element and at least one non-volatile memory coupled to the at least one light-emitting element, forming conductive interconnects penetrating through the substrate from a second side of the substrate to the first side, and forming one or more integrated circuits on the second side, the one or more integrated circuits being conductively coupled to the array of active-matrix light-emitting pixels through the conductive interconnects. The methods can further include forming an array of active-matrix multi-color display pixels by using the array of active-matrix light emitting pixels.

Abstract: This invention relates to integrating pixelated micro-devices into a system substrate. Defined are methods of transferring a plurality of micro-devices into a receiver substrate where a plurality of micro-devices is arranged in one or more cartridges that are aligned and bonded to a template. Further, defining the transfer process, the micro-devices may be selected, identified as defective and a transfer adjustment made based on defective micro-devices.

Abstract: An eye-gaze tracker wearable by a user, includes: an infrared irradiation unit to irradiate an eyeball of the user with infrared light; an infrared sensor provided on a lens, the infrared sensor being translucent at least to visible light and to output a signal when the infrared light reflected from the eyeball is incident on the infrared sensor; and processing circuitry to determine a gaze direction of the user based on the signal output from the infrared sensor.

Abstract: A light emitting device is provided. The light emitting device includes a light emitting element, which emits blue light, and a light transmissive member having a first principal face bonded to the light emitting element and a second principal face opposite the first principal face. The light transmissive member has a light transmissive base material and wavelength conversion substances, which are contained in the base material and which absorb the light from the light emitting element and emit light. The wavelength conversion substances are localized in the base material towards the first principal face, and include a first phosphor which emits green to yellow light and a second phosphor which emits red light. The first phosphor is more localized towards the first principal face than the second phosphor. The second phosphor is a manganese-activated fluoride phosphor.

Abstract: Integrated active-matrix light-emitting pixel arrays based devices and methods of forming the integrated pixel arrays based devices are provided. In one aspect, a device includes a semiconductor substrate having a first side and a second side opposite to the first side and an array of active-matrix light-emitting pixels formed on the first side, each of the light-emitting pixels including at least one light-emitting element and at least one non-volatile memory coupled to the at least one light-emitting element. The at least non-volatile memory includes at least one transistor, and the at least one light-emitting element includes multiple layers epitaxially grown on a semiconductor surface of the semiconductor substrate on the first side. The device can further include scanning drivers and data drivers formed on the first side of the semiconductor substrate and coupled to the light-emitting pixels through corresponding word lines and data lines formed on the first side.

Abstract: A preparation method for a platform-shaped active region based P-I-N diode string in a reconfigurable loop antenna includes: (a) selecting an SOI substrate; (b) etching the SOI substrate to form a platform-shaped active region; (c) depositing a P-type Si material and an N-type Si material around the platform-shaped active region by an in-situ doping process to form a P region and an N region respectively; (d) depositing a polysilicon material around the platform-shaped active region; (e) forming leads on a surface of the polysilicon material and forming PADs by photolithography, to form the P-I-N diode string. Therefore, a high-performance platform-shaped active region based P-I-N diode string suitable for a solid-state plasma antenna can be provided by an in-situ doping process.

Abstract: Various embodiments of the present application are directed towards a method for forming an integrated chip in which a group III-V device is bonded to a substrate, as well as the resulting integrated chip. In some embodiments, the method includes: forming a chip including an epitaxial stack, a metal structure on the epitaxial stack, and a diffusion layer between the metal structure and the epitaxial stack; bonding the chip to a substrate so the metal structure is between the substrate and the epitaxial stack; and performing an etch into the epitaxial stack to form a mesa structure with sidewalls spaced from sidewalls of the diffusion layer. The metal structure may, for example, be a metal bump patterned before the bonding or may, for example, be a metal layer that is on an etch stop layer and that protrudes through the etch stop layer to the diffusion layer.

Abstract: The present disclosure provides a flexible display substrate, a manufacturing method thereof, and a display panel, belonging to the field of display technology. The manufacturing method includes: forming a release layer structure containing a plurality of charged microspheres on a carrier substrate; forming a flexible substrate and a display device on the release layer structure; and peeling off the carrier substrate and the flexible substrate, to obtain a flexible display substrate.

Abstract: A method of manufacturing a light-emitting device includes: directly bonding a plurality of light-emitting elements to a collective light-transmissive member having a plate shape, each light-emitting element comprising a plurality of electrodes; subsequently, forming stud bumps on each electrode of each light-emitting element; subsequently, dividing the collective light-transmissive member to obtain a plurality of light-transmissive members on each of which one or more of the light-emitting elements are bonded; and subsequently, mounting the light-emitting elements on or above a mounting base by a flip-chip technique.