Abstract: An eye-gaze tracker wearable by a user, includes: an infrared irradiation unit to irradiate an eyeball of the user with infrared light; an infrared sensor provided on a lens, the infrared sensor being translucent at least to visible light and to output a signal when the infrared light reflected from the eyeball is incident on the infrared sensor; and processing circuitry to determine a gaze direction of the user based on the signal output from the infrared sensor.

Abstract: A light emitting device is provided. The light emitting device includes a light emitting element, which emits blue light, and a light transmissive member having a first principal face bonded to the light emitting element and a second principal face opposite the first principal face. The light transmissive member has a light transmissive base material and wavelength conversion substances, which are contained in the base material and which absorb the light from the light emitting element and emit light. The wavelength conversion substances are localized in the base material towards the first principal face, and include a first phosphor which emits green to yellow light and a second phosphor which emits red light. The first phosphor is more localized towards the first principal face than the second phosphor. The second phosphor is a manganese-activated fluoride phosphor.

Abstract: Integrated active-matrix light-emitting pixel arrays based devices and methods of forming the integrated pixel arrays based devices are provided. In one aspect, a device includes a semiconductor substrate having a first side and a second side opposite to the first side and an array of active-matrix light-emitting pixels formed on the first side, each of the light-emitting pixels including at least one light-emitting element and at least one non-volatile memory coupled to the at least one light-emitting element. The at least non-volatile memory includes at least one transistor, and the at least one light-emitting element includes multiple layers epitaxially grown on a semiconductor surface of the semiconductor substrate on the first side. The device can further include scanning drivers and data drivers formed on the first side of the semiconductor substrate and coupled to the light-emitting pixels through corresponding word lines and data lines formed on the first side.

Abstract: A preparation method for a platform-shaped active region based P-I-N diode string in a reconfigurable loop antenna includes: (a) selecting an SOI substrate; (b) etching the SOI substrate to form a platform-shaped active region; (c) depositing a P-type Si material and an N-type Si material around the platform-shaped active region by an in-situ doping process to form a P region and an N region respectively; (d) depositing a polysilicon material around the platform-shaped active region; (e) forming leads on a surface of the polysilicon material and forming PADs by photolithography, to form the P-I-N diode string. Therefore, a high-performance platform-shaped active region based P-I-N diode string suitable for a solid-state plasma antenna can be provided by an in-situ doping process.

Abstract: Various embodiments of the present application are directed towards a method for forming an integrated chip in which a group III-V device is bonded to a substrate, as well as the resulting integrated chip. In some embodiments, the method includes: forming a chip including an epitaxial stack, a metal structure on the epitaxial stack, and a diffusion layer between the metal structure and the epitaxial stack; bonding the chip to a substrate so the metal structure is between the substrate and the epitaxial stack; and performing an etch into the epitaxial stack to form a mesa structure with sidewalls spaced from sidewalls of the diffusion layer. The metal structure may, for example, be a metal bump patterned before the bonding or may, for example, be a metal layer that is on an etch stop layer and that protrudes through the etch stop layer to the diffusion layer.

Abstract: The present disclosure provides a flexible display substrate, a manufacturing method thereof, and a display panel, belonging to the field of display technology. The manufacturing method includes: forming a release layer structure containing a plurality of charged microspheres on a carrier substrate; forming a flexible substrate and a display device on the release layer structure; and peeling off the carrier substrate and the flexible substrate, to obtain a flexible display substrate.

Abstract: A method of manufacturing a light-emitting device includes: directly bonding a plurality of light-emitting elements to a collective light-transmissive member having a plate shape, each light-emitting element comprising a plurality of electrodes; subsequently, forming stud bumps on each electrode of each light-emitting element; subsequently, dividing the collective light-transmissive member to obtain a plurality of light-transmissive members on each of which one or more of the light-emitting elements are bonded; and subsequently, mounting the light-emitting elements on or above a mounting base by a flip-chip technique.

Abstract: An organic layer deposition apparatus, a method of manufacturing an organic light-emitting display apparatus by using the same, and an organic light-emitting display apparatus manufactured using the method. The organic layer deposition apparatus includes a conveyer unit including first and second conveyer units, loading and unloading units, and a deposition unit. A transfer unit moves between the first and second conveyer units, and the substrate attached to the transfer unit is spaced from a plurality of organic layer deposition assemblies of the deposition unit while being transferred by the first conveyer unit. The organic layer deposition assemblies include common layer deposition assemblies and pattern layer deposition assemblies.

Abstract: An apparatus facilitating luminosity uniformity across an organic light emitting diode (OLED) device is provided. In one embodiment, the method includes: operating an organic light emitting diode (OLED) device including an anode; a semiconductor material coupled to the anode; and a cathode coupled to the semiconductor material. The method also includes dissipating heat of the OLED device in a defined pattern to increase a luminosity uniformity of the OLED device, wherein the dissipating the heat in the defined pattern comprises causing a first temperature value at a first region of the OLED device and causing a second temperature value at a second region of the OLED device.

Abstract: The current disclosure provides a pickup and placing device including a control element, a substrate and a pickup structure. The substrate has an upper surface and a lower surface opposite to each other and a plurality of conductive via structures, wherein the conductive via structures are electrically connected to the control element. The pickup structure includes a plurality of pickup heads used for picking up or placing a plurality of light emitting diodes respectively. The pickup structure is disposed on the lower surface of the substrate or disposed in the substrate and extended outside the substrate, and the substrate is disposed between the control element and the pickup structure, wherein the pickup heads are electrically connected to the conductive via structures.

Abstract: A manufacturing method for an AlAs—Ge—AlAs structure based plasma p-i-n diode in a multilayered holographic antenna is provided. The manufacturing method includes: selecting a GeOI substrate and disposing an isolation region in the GeOI substrate; etching the GeOI substrate to form a P-type trench and an N-type trench; depositing AlAs materials in the P-type trench and the N-type trench and performing ion implantation into the AlAs materials in the P-type trench and N-type trench to form a P-type active region and an N-type active region; and forming leads on surfaces of the P-type active region and the N-type active region to obtain the AlAs—Ge—AlAs structure based plasma p-i-n diode. Therefore, a high-performance Ge based plasma p-i-n diode suitable for forming a solid plasma antenna can be provided by using a deep trench isolation technology and an ion implantation process.

Abstract: A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer; a first electrode including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.

Abstract: An optoelectronic semiconductor chip, an optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment the chip includes a main body including a carrier having a top, a bottom opposite the top and side faces connecting the bottom with the top and a semiconductor layer sequence arranged on the top of the carrier, wherein the semiconductor layer sequence is configured to emit or absorb electromagnetic radiation and two contact faces arranged on the semiconductor layer sequence. The chip further includes two contact elements contacting the contact faces, wherein the contact elements include conductor tracks which are guided from the contact faces over edges of the main body on the side faces of the carrier.

Abstract: A preparation method for a SiGe based plasma p-i-n diode string for a sleeve antenna is provided. The preparation method includes: selecting a SiGeOI substrate with a certain crystal orientation and forming isolation regions on the SiGeOI substrate; etching the substrate to form P-type trenches and N-type trenches, depths of the P-type trenches and the N-type trenches each being smaller than a thickness of a top SiGe layer of the substrate; filling the P-type trenches and the N-type trenches and forming P-type active regions and N-type active regions in the top SiGe layer of the substrate by an ion implantation process; and forming leads on the substrate so as to obtain the heterogeneous SiGe based plasma p-i-n diode. Therefore, a high-performance heterogeneous SiGe based plasma p-i-n diode suitable for forming a solid-state plasma antenna is prepared by using a deep trench isolation technology and the ion implantation process.

Abstract: A pre-screening method, manufacturing method, device and electronic apparatus of micro-LED. The method for pre-screening defect micro-LEDs comprises: obtaining a defect pattern of defect micro-LEDs on a laser-transparent substrate (S6100); and irradiating the laser-transparent substrate with laser from the laser-transparent substrate side in accordance with the defect pattern (S6200), to lift-off the defect micro-LEDs from the laser-transparent substrate.

Abstract: An electroluminescent light source is provided with an adjusted or adjustable luminance parameter wherein: the source includes a set of segments, each segment comprising a discrete electroluminescent element or multiple discrete electroluminescent elements connected permanently to one another and having an emission area; at least a portion of the segments has different emission areas; the source comprising means for controlling at least a portion of the segments.

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LED at wafer level comprises: temporarily bonding micro-LEDs on a laser-transparent original substrate onto a carrier substrate via a first bonding layer; irradiating the original substrate with laser, to lift-off selected micro-LEDs; performing a partial release on the first bonding layer, to transfer the selected micro-LEDs to the carrier substrate; temporarily bonding the micro-LEDs on the carrier substrate onto a transfer head substrate via a second bonding layer; performing a full release on the first bonding layer, to transfer the micro-LEDs to the transfer head substrate; bonding the micro-LEDs on the transfer head substrate onto a receiving substrate; and removing the transfer head substrate by releasing the second bonding layer, to transfer the micro-LEDs to the receiving substrate.

Abstract: A manufacturing method of a display device in an embodiment according to the present invention, the method includes forming a terminal electrode in a terminal part of a first substrate, forming a pixel electrode corresponding to each pixel in a pixel part of the first substrate, forming a first intermediate layer in a region including the terminal electrode of the terminal part, forming an organic layer above the pixel electrode in the pixel part, forming a counter electrode layer above the first substrate including the pixel part and the terminal part, forming a passivation layer above the counter electrode layer, arranging a second substrate opposing the pixel part and bonding the first substrate and the second substrate using a sealing member enclosing the pixel part, and removing the first intermediate layer, the counter electrode layer and the passivation layer in the terminal part.

Abstract: Translucent multiphase adhesive comprising at least one continuous phase and dispersed domains, the at least one continuous phase having a refractive index of more than 1.45 and a permeation rate for water vapor of less than 100 g/m2, and the disperse domains being present in a size range of 0.1 ?m to 50 ?m and being included in a weight fraction of not more than 10 wt % in the adhesive, characterized in that the disperse domains are polymeric in nature and have a water vapor permeation rate of less than 100 g/m2d and a refractive index of less than 1.45.

Abstract: The present disclosure relates to an organic light emitting display device including a substrate having an outer part and a display part, a driving thin film transistor on each of a plurality of pixel regions within the display part of the substrate, a pixel electrode on each pixel region of the display part, an organic light emitting unit on each pixel region of the display part to emit light, a common electrode on the organic light emitting unit and a bank layer to apply a signal to the organic light emitting layer, and a first passivation layer, an organic insulating layer and a second passivation layer on the outer part and the display part, wherein the first passivation layer and the second passivation layer are removed from the outermost region of the outer part, so that the substrate is exposed to the outside.

Abstract: A method for producing a lighting device is provided. According to the method, a plurality of semiconductor emitters arranged alongside one another are embedded in a light-transmissive filling compound apart from a side having their electrical connections, trenches are introduced into the light-transmissive filling compound at the side having the electrical connections between at least two semiconductor emitters, the side of the light-transmissive filling compound having the electrical connections, including the electrical connections, is covered with a dielectric material, electrical lines are led through the dielectric material to the electrical connections, and at least some of the trenches are severed.

Abstract: According to one or more embodiments of the present invention, a display apparatus includes: a substrate; a display unit which is formed on the substrate and includes an emission area and a non-emission area; a first coating layer which is formed on the display unit and has an uneven area formed on the emission area; a first blocking layer which is formed on the non-emission area of the first coating layer; and a second blocking layer which is formed on the first blocking layer and prevents reflection of external light.

Abstract: A wafer-level process for manufacturing solid state lighting (“SSL”) devices using large-diameter preformed metal substrates is disclosed. A light emitting structure is formed on a growth substrate, and a preformed metal substrate is bonded to the light emitting structure opposite the growth substrate. The preformed metal substrate can be bonded to the light emitting structure via a metal-metal bond, such as a copper-copper bond, or with an inter-metallic compound bond.

Abstract: An apparatus facilitating luminosity uniformity across an organic light emitting diode (OLED) device is provided. In one embodiment, the method includes: operating an organic light emitting diode (OLED) device including an anode; a semiconductor material coupled to the anode; and a cathode coupled to the semiconductor material. The method also includes dissipating heat of the OLED device in a defined pattern to increase a luminosity uniformity of the OLED device, wherein the dissipating the heat in the defined pattern comprises causing a first temperature value at a first region of the OLED device and causing a second temperature value at a second region of the OLED device.

Abstract: A light-emitting array module includes a circuit substrate, a light-emitting unit, and an encapsulation body. The light-emitting unit includes a plurality of light-emitting groups arranged in matrix on the circuit substrate. The encapsulation body disposed on the circuit substrate for encapsulating the light-emitting groups. The encapsulation body includes a plurality of encapsulation portions and a plurality of thin connection portions. Therefore, light beams generated by the light-emitting group is transformed into an obvious single point light source without halation due to the design of “each thin connection portion connected between the two adjacent encapsulation portions to separate the two adjacent encapsulation portions from each other by a predetermined distance”, so that the color resolution of the light-emitting array module is increased. In addition, the present disclosure further provides a display device including the light-emitting array module.

Abstract: The present invention discloses a touch display device and a manufacturing method thereof, the display device comprising: an OLED display layer disposed on a lower substrate; an upper substrate; an air layer formed between the upper substrate and the lower substrate; and a touch module, disposed above the OLED display layer, wherein the touch module comprises: a first sensing circuit layer and a second sensing circuit layer, further wherein the first sensing circuit layer and the second sensing circuit layer are spaced and the distance between them is more than 2 ?m. The display device can reduce interference in detection circuit caused by coupling capacitance formed between the sensing circuit layers thereby improving accuracy of touch detection.

Abstract: A method for manufacturing a light emitting device, includes a first step of mounting a light emitting element on a support base with a bump; and a second step of clamping the support base and the light emitting element and pressing between a lower molding die and an upper molding die to plastically deform the bump, and injecting the compound of a cover member into a mold cavity between the lower molding die and the upper molding die and curing the compound to form the cover member that covers at least a lower surface of the light emitting element after the first step.

Abstract: A method of manufacturing an array substrate, an array substrate and a display device are provided. The method of manufacturing the array substrate includes: forming a pattern of a gate metal layer including a gate line and a gate electrode and preserving photoresist at a position on the pattern of the gate metal layer corresponding to a gate lead hole; sequentially forming a gate insulating thin film, a semiconductor thin film and a source/drain metal thin film; removing the photoresist preserved at the position on the pattern of the gate metal layer corresponding to the gate lead hole, and forming the gate lead hole; forming a pattern of a source/drain metal layer including a source electrode, a drain electrode and a data line and a semiconductor layer; and forming a pattern including a pixel electrode layer and a channel.

Abstract: An LED array includes: a first LED unit having a first active layer and a first side; a second LED unit having a second active layer and a second side facing the first side; a trench separating the first LED unit from the second LED unit; and a light-guiding structure formed between the first LED unit and the second LED unite for guiding the light emitted by the first active layer and the second active layer away from the LED array.

Abstract: A package of an environmental sensitive element including a flexible substrate, an environmental sensitive element, at least one flexible sacrificial layer and a packaging structure is provided. The environmental sensitive element is disposed on the flexible substrate. The flexible sacrificial layer is disposed on the environmental sensitive element, wherein the environmental sensitive element includes a plurality of first thin films and the flexible sacrificial layer includes a plurality of second thin films. The bonding strength between two adjacent second thin films is equal to or lower than the bonding strength between two adjacent first thin films. Further, the packaging structure covers the environmental sensitive element and the flexible sacrificial layer.

Abstract: A lighting apparatus includes a first doped semiconductor layer, a light-emitting layer disposed over the first doped semiconductor layer, a second doped semiconductor layer disposed over the light-emitting layer, a first conductive terminal, a second conductive terminal, and a photo-conversion layer. The second doped semiconductor layer has a different type of conductivity than the first doped semiconductor layer. The first conductive terminal and the second conductive terminal each are disposed below the first doped semiconductor layer. The photo-conversion layer is disposed over the second doped semiconductor layer and on side surfaces of the first and second doped semiconductor layers and the light-emitting layer. A bottommost surface of the photo-conversion layer is located closer to the second doped semiconductor layer than bottom surfaces of the first and second conductive terminals.

Abstract: The invention relates to an organic optoelectronic device which is protected from ambient air by a sealed encapsulation structure of the type including at least one thin layer. The device includes a substrate; at least one light-emitting unit deposited on the substrate, incorporating internal electrodes and external electrodes defining an active zone and, between the electrodes, a stack of organic films; and a sealed encapsulation structure having one or more thin layers including at least one inorganic layer placed on top of the light-emitting unit and encasing same laterally. The device also includes a pre-encapsulation structure located between the external electrode and the encapsulation structure and which includes a buffer layer covering the external electrode and contains a heterocyclic organometallic complex having a glass transition temperature above 80° C., and a barrier layer covering the buffer layer and contains a silicon oxide SiOx, wherein x is 0<x<2.

Abstract: A transfer stamp that can be charged with a spatial pattern of electrostatic charge for picking up selected semiconductor dice from a host substrate and transferring them to a target substrate. The stamp may be bulk charged and then selectively discharged using irradiation through a patterned mask. The technique may also be used to electrostatically transfer selected semiconductor dice from a host substrate to a target substrate.

Abstract: A light-emitting diode device comprises a substrate; a plurality of LED units formed on the substrate, each LED unit including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; and a first sidewall with a length of A microns; and a plurality of conductive connecting structures, spatially separated from each other, wherein one end of the conductive connecting structure are formed on the first sidewall of one of the LED units, and a spacing between two adjacent conductive connecting structures is less than 100 microns; wherein each conductive connecting structure comprises a first extending part formed on one LED unit and a second extending part formed on the adjacent LED unit, wherein lengths of the first and the second extending parts are different; wherein a number of the conductive connecting structures is an integer larger than (A/100)?1.

Abstract: Various embodiments of methods and systems for designing and constructing displays from multiple light emitting elements are disclosed. Display elements having different light emitting and self-organizing characteristics may be used during display assembly.

Abstract: A semiconductor device includes a first base material having a first surface; a second base material having a coefficient of linear expansion different from that of the first base material, being in contact with the first base material, and having a second surface being adjacent to the first surface; and a first interconnect formed over the first and second surfaces to straddle a borderline between the first and second base materials. The cross-sectional area of the first interconnect along the borderline is greater than the cross-sectional area of at least part of a portion of the first interconnect on the first surface along a width of the first interconnect, or the cross-sectional area of at least part of a portion of the first interconnect on the second surface along the width of the first interconnect.

Abstract: A package of an environmental sensitive element including a flexible substrate, an environmental sensitive element, a flexible sacrificial layer and a packaging structure is provided. The environmental sensitive element is disposed on the flexible substrate. The flexible sacrificial layer is disposed on the environmental sensitive element, wherein the environmental sensitive element includes a plurality of first thin films and the flexible sacrificial layer includes a plurality of second thin films. The bonding strength between two adjacent second thin films is substantially equal to or lower than the bonding strength between two adjacent first thin films. Further, the packaging structure covers the environmental sensitive element and the flexible sacrificial layer.

Abstract: Disclosed is an organic light emitting display (OLED) apparatus that includes a substrate; an organic light emitting element on the substrate, the organic light emitting element including a first electrode, an organic light emitting layer and a second electrode; a viscoelastic layer on the organic light emitting element, wherein an elastic portion of the viscoelastic layer is about 30% or more, the elastic portion being defined by <Equation 1>: Elastic portion (Ep) (%)=(?/?0)×100, wherein ?0 is an initial stress generated when a strain of about 50% is applied to the viscoelastic layer and ? is a final stress measured after the strain is continuously applied thereto for about 180 seconds, with the initial stress ?0 and the final stress ? being measured at about 80° C. through a relaxation modulus test.

Abstract: An organic light emitting display device includes a first substrate, a second substrate, and an array of organic light emitting elements formed over the first substrate and interposed between the first and second substrate. The array comprises a pixel defining layer. The organic light emitting display device further includes a recess formed into the pixel defining layer, a sealing member, and a reinforcing member. The sealing member is formed along the edges of the first and second substrates and interconnects the first and second substrates. The reinforcing member comprises a first portion positioned in the recess and a second portion projected outside the recess toward the second substrate such that the second portion of the reinforcing member is capable of supporting the second substrate when the second substrate is pressed toward the first substrate by an external force.

Abstract: The substrate with through silicon plugs (or vias) described above removes the need for conductive bumps. The process flow is very simple and cost efficient. The structures described combines the separate TSV, redistribution layer, and conductive bump structures into a single structure. By combining the separate structures, a low resistance electrical connection with high heat dissipation capability is created. In addition, the substrate with through silicon plugs (or vias, or trenches) also allows multiple chips to be packaged together. A through silicon trench can surround the one or more chips to provide protection against copper diffusing to neighboring devices during manufacturing. In addition, multiple chips with similar or different functions can be integrated on the TSV substrate. Through silicon plugs with different patterns can be used under a semiconductor chip(s) to improve heat dissipation and to resolve manufacturing concerns.

Abstract: A method of and a system for making LED comprising concurrently forming multiple dam structures on a whole silicon wafer using a liquid transfer mold, attaching dies to the silicon wafer inside each of the dam structure, performing flux reflow, cleaning flux, performing wire bonding, dispensing phosphor, curing the phosphor, concurrently forming dome structures by using a liquid transfer mold on all of the dam structures, mounting wafer, and using a saw for single or multiple LED(s) singulation.

Abstract: An OLED display includes: a substrate including a display area with a plurality of pixels; an encapsulation substrate at the display area; and a sealant formed along an edge of the encapsulation substrate between the substrate and the encapsulation substrate to bond the substrate to the encapsulation substrate. The sealant includes a plurality of straight line portions and crossing portions formed by two straight line portions crossing each other.

Abstract: A manufacturing method of light emitting devices, comprises a substrate-forming step of forming a planar-shaped substrate, a frame-forming step of forming a closed frame on the substrate, an element-mounting step of mounting multiple light emitting elements in an inside of the frame, a sealing step of injecting a liquid material that is to be a sealing member to the inside of the frame so as to seal the multiple light emitting elements, and a dividing step of dividing the multiple light emitting elements together with the substrate and the sealing member so as to obtain multiple light emitting devices with the sealing member exposed from a side surface thereof.

Abstract: High density multi-chip LED devices are described. Embodiments of the present invention provide high-density, multi-chip LED devices with relatively high efficiency and light output in a compact size. An LED device includes a plurality of interconnected LED chips and an optical element such as a lens. The LED chips may be arranged in two groups, wherein the LED chips within each group are connected in parallel and the groups are connected in series. In some embodiments, the LED device includes a submount, which may be made of ceramic. The submount may include a connection bus and semicircular areas to which chips are bonded. Wire bonds can be connected to the LED chips so that all the wire bonds are disposed on the outside of a group of LED chips to minimize light absorption.

Abstract: A deposition apparatus includes (i) a sheet including a slit area, first and second dummy slit areas, and a binding area; and (ii) a frame. The slit area has a plurality of patterning slits that are extended along a first direction and arranged along a second direction crossing the first direction. The first and second dummy slit areas are outside the slit area along the second direction and along the opposite direction to the second direction respectively and have a plurality of dummy slits. The binding area surrounds the slit area and the first and second dummy slit areas. The frame is attached to the binding area of the sheet and shields at least some of the plurality of dummy slits of the first and second dummy slit areas.

Abstract: The invention relates to an optoelectronic semiconductor component, comprising a substrate-free optoelectronic semiconductor chip (1), which has a first main surface (1a) on an upper face and a second main surface (1b) on a lower face, and a metal carrier (2), which is arranged on the lower face of the optoelectronic semiconductor chip (1), wherein the metal carrier (2) protrudes over the optoelectronic semiconductor chip (1) in at least one lateral direction (1) and the metal carrier (2) is deposited on the second main surface (1b) of the optoelectronic semiconductor chip (1) using a galvanic or electroless plating method.

Abstract: A method for manufacturing an LED (light emitting diode) package comprises following steps: providing an electrically insulated base, the base having a first surface and a second surface opposite thereto; an annular voltage stabilizing module is formed on the first surface; a first electrode is formed on the first surface, wherein the first electrode is attached to and encircled by the voltage stabilizing module; a second electrode is formed on the first surface, wherein the second electrode is attached to and encircles the voltage stabilizing module; an LED chip is mounted on the first electrode, wherein the LED chip is electrically connected to the first and second electrodes, and the LED chip and the voltage stabilizing module are connected in reverse parallel. Finally, an encapsulative layer is brought to encapsulate the LED chip.

Abstract: An apparatus includes a wafer with a number of openings therein. For each opening, an LED device is coupled to a conductive carrier and the wafer in a manner so that each of the coupled LED device and a portion of the conductive carrier at least partially fill the opening. A method of fabricating an LED device includes forming a number of openings in a wafer. The method also includes coupling light-emitting diode (LED) devices to conductive carriers. The LED devices with conductive carriers at least partially fill each of the openings.

Abstract: An embodiment of the invention comprises a first III-V semiconductor structure including a first light emitting layer disposed between a first n-type region and a first p-type region, and a second III-V semiconductor structure including a second light emitting layer disposed between a second n-type region and a second p-type region. A first contact is formed on a top surface of the first III-V semiconductor structure. A second contact is formed on a bottom surface of the second III-V semiconductor structure. A bonding structure is disposed between the first and second III-V semiconductor structures.

Abstract: A method for manufacturing a display panel, including defining a desorbing area of a support substrate by forming one of a release layer or a recess portion in the desorbing area, cleaning a surface of the support substrate, disposing a thin film substrate on the support substrate, directly bonding, in an adsorbing area external to the desorbing area, the thin film substrate to the support substrate, forming a pixel and a sealing member on the thin film substrate, cutting the sealing member and the thin film substrate at a location that corresponds to the desorbing area, and separating the support substrate from the thin film substrate.