Abstract: A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material.

Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a plurality of light emitting cells including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode layer connected to the first conductive semiconductor layer of a first light emitting cell of the plural light emitting cells; a plurality of second electrode layers under the light emitting cells, a portion of the second electrode layers being connected to the first conductive semiconductor layer of an adjacent light emitting cells; a third electrode layer disposed under a last light emitting cell of the plural light emitting cells; a first electrode connected to the first electrode layer; a second electrode connected to the third electrode layer; an insulating layer around the first to third electrode layers; and a support member under the insulating layer.

Abstract: The present invention provides an optical array module that includes a plurality of semiconductor devices mounted on a thermal substrate formed with a plurality of openings that function as micro-reflectors, wherein each micro-reflector includes a layer of reflective material to reflect light. Such material preferably is conductive so as to provide electrical connection for its associated semiconductor device.

Abstract: Disclosed herein is a display panel including a mounting substrate in which one or more light-emitting devices each including one or more light-emitting elements are mounted on a circuit substrate; and a transparent substrate disposed to face the light-emitting device side of the mounting substrate, wherein the transparent substrate has a transparent base material and a resin layer formed on the mounting substrate side of the transparent base material, and the resin layer is in contact with the light-emitting device and has, formed on an upper surface or a side surface of the light-emitting device, an inclined part which spreads from the light-emitting device side toward the transparent base material side.

Abstract: An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.

Abstract: There is a reflective layer covering almost the entire surface of the light emitting portion except the portions where the light emitting elements are arranged, it is possible to increase the reflectivity of the light emitting portion to realize a higher luminance. In addition, the heat generated from the light emitting elements can be dissipated through the reflective layer, so that it is possible to prevent overheat of the light emitting device, and it is thus possible to improve the reliability of the light emitting device.

Abstract: The disclosed semiconductor light-emitting element is configured from layering an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer (160); and a first electrode (200), which is the cathode, is formed on the p-type semiconductor layer (160). Also, between the p-type semiconductor layer (160) and a reflecting layer (220b), the first electrode (200) is provided with a crystalline first transparent electrode layer (210) and a non-crystalline second transparent electrode layer (220a). The crystalline first transparent electrode layer (210) increases adhesion with the p-type semiconductor layer (160), and the non-crystalline second transparent electrode layer (220a) suppresses delamination of the reflecting layer (220b). Also, the first transparent electrode layer (210) and the second transparent electrode layer (220a) transmit light emitted from the light-emitting layer and suppress degradation of reflective characteristics.

Abstract: Provided are a light-emitting device having improved light dispersion efficiency, a light-emitting system including the same, and fabricating methods of the light-emitting device and the light-emitting system. The light-emitting device includes one or more light-emitting elements arranged on first surface of a substrate, an insulation film formed on the first surface of a substrate so as to cover the one or more light-emitting elements, and a plurality of uneven patterns formed on the insulation film formed on each of the one or more light-emitting elements so as to be spaced apart from each other, wherein the plurality of uneven patterns are all convex patterns or concave patterns and each of the plurality of uneven patterns has a curved cross-sectional shape.

Abstract: In accordance with certain embodiments, semiconductor dies are embedded within polymeric binder to form, e.g., freestanding white light-emitting dies and/or composite wafers containing multiple light-emitting dies embedded in a single volume of binder.

Abstract: A method of manufacturing a flexible display includes forming a silicon sacrificial layer on a rigid base material layer, affixing a flexible base material layer to the silicon sacrificial layer by an adhesive layer, forming a display element layer on the flexible base material layer, and utilizing a fluorine-containing corrosive gas to etch and gasify the silicon sacrificial layer to cause the flexible base material layer to separate from the rigid base material layer. A substrate for manufacturing a flexible display includes a rigid base material layer, a silicon sacrificial layer disposed on the rigid base material layer, an adhesive layer disposed on the silicon sacrificial layer, a flexible base material layer disposed on the adhesive layer, and a display element layer disposed on flexible base material layer.

Abstract: Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights.

Abstract: The invention provides a method for making a laser module, comprising: Step 1: fixing a laser crystal and a nonlinear crystal through at least one spacing element to form a first structure; Step 2: assembling the first structure on a substrate; Step 3: removing the spacing element to form a first laser module. According to the invention, the laser crystal and the nonlinear crystal are separately fixed on a heat conductive substrate to form the laser module, thereby the size of the laser module is reduced.

Abstract: The inventions relates to a method of manufacturing a circuit incorporating a solid state light emitting component, the method including providing an insulating layer, producing at least one through hole in the insulating layer, providing a conductive layer, bonding a main surface of the conductive layer to the insulating layer, and positioning at least one solid state light emitting component in the hole of the insulating layer and connecting this component to the conductive layer.

Abstract: A method of forming an emission layer by using droplets and an emission part on which charges with opposite polarities are induced, a method of manufacturing an organic light emitting display device including the emission layer, and the organic light emitting display device thereof, the method includes inducing charges having a first charge polarity on emission portions by facing a surface of a mask and a surface of a substrate, contacting the charge inducing units of the mask to the emission portions of the substrate, and then separating the mask from the substrate, supplying droplets exhibiting a second and opposite charge polarity to the substrate and forming the emission layer by allowing droplets exhibiting the second charge polarity to be attracted to and move to the emission portions exhibiting the first charge polarity.

Abstract: Light emitting devices for light emitting diodes (LEDs) are disclosed. In one embodiment a light emitting device can include a substrate and a plurality of light emitting diodes (LEDs) disposed over the substrate in patterned arrays. The arrays can include one or more patterns of LEDs. A light emitting device can further include a retention material disposed about the array of LEDs. In one aspect, the retention material can be dispensed.

Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a first chip structure including a first reflective layer and a first light emitting structure having a plurality of compound semiconductor layers on the first reflective layer; a second chip structure bonded onto the first chip structure and including a second reflective layer and a second light emitting structure having a plurality of compound semiconductor layers on the second reflective layer; and an electrode on the second chip structure.

Abstract: An organic electroluminescence display unit including: a lower electrode for each device; a first hole injection/transport layer provided on the lower electrode for each device; a second organic light emitting layer of the first color provided on the first hole injection/transport layer for the second organic electroluminescence device; a second hole injection/transport layer provided on the entire surfaces of the second organic light emitting layer and the first hole injection/transport layer for the first organic electroluminescence device, and being made of a low molecular material; a blue first organic light emitting layer provided on the entire surface of the second hole injection/transport layer; and an electron injection/transport layer having at least one of electron injection characteristics and electron transport characteristics, and an upper electrode that are provided in sequence on the entire surface of first organic light emitting layer.

Abstract: The method includes the steps of preparing an epitaxial wafer by forming a multilayer semiconductor structure on a main surface of a substrate; forming stripe electrodes and bonding pads on the multilayer semiconductor structure with the bonding pads being respectively electrically connected to the stripe electrodes; forming a projection portion on the multilayer semiconductor structure; forming laser diode (LD) bars by cutting the epitaxial wafer; arranging the LD bars on a support surface such that a side surface thereof is oriented normal to the support surface, and disposing spacers between the LD bars; and forming a coating film on the side surface. The projection portion has a height, measured from the main surface of the substrate, greater than a height of the stripe electrodes. Furthermore, the laser diode bar has at least one projection portion.

Abstract: The invention relates to a method for producing an electrical terminal support for an optoelectronic semiconductor body, comprising the following steps: providing a carrier assembly (1), which comprises a carrier body (11), an intermediate layer (12) arranged on an outer surface (111) of the carrier body (11), and a use layer (13) arranged on the intermediate layer (12); introducing at least two openings (4), which are mutually spaced in the lateral direction (L), in the use layer (13) via an outer surface (131) of the use layer (13), wherein the openings extend completely through the use layer (13) in the vertical direction (V); electrically insulating lateral surfaces (41) of the openings (4) and of the outer face (131) of the use layer (13); arranging electrically conductive material (6) at least in the openings (4), wherein after completion of the terminal carrier (100), the electrically conductive material (6) has an interruption (U) in the progression thereof along the outer surface (131) of the use lay

Abstract: An exemplary light-emitting diode (LED) package includes a first electrode, a second electrode spaced from the first electrode, an electrically insulating substrate sandwiched by and connecting with the first electrode and the second electrode, a first LED chip and a second LED chip mounted on top surfaces of the first and second electrodes respectively, and a reflector covering the top surfaces of the first and second electrodes. The first LED chip mounted on the top surface of the first electrode is above the second LED chip mounted on the top surface of the second surface. L-shaped retaining walls are formed on the top surfaces of the first and second electrodes. By the retaining walls, the LED package can also be used as a side-view LED package.

Abstract: A method for bonding an LED wafer, a method for manufacturing an LED chip, and a bonding structure are provided. The method for bonding an LED wafer includes the following steps. A first metal film is formed on an LED wafer. A second metal film is formed on a substrate. A bonding material layer whose melting point is lower than or equal to about 110° C. is formed on the surface of the first metal film. The LED wafer is placed on the substrate. The bonding material layer is heated at a pre-solid reaction temperature for a pre-solid time to perform a pre-solid reaction. The bonding material layer is heated at a diffusion reaction temperature for a diffusing time to perform a diffusion reaction, wherein the melting points of the first and the second inter-metallic layers after diffusion reaction are higher than about 110° C.

Abstract: A method for manufacturing LED packages includes following steps: providing an engaging frame including a lead frame, electrode structures having first and second electrodes, and defining slots between the electrode structure, each first electrode including a first inserting part and each second electrode including a second inserting part; providing a substrate and combining the substrate and the engaging frame together to make through holes of the substrate located at lateral sides of the first and second inserting parts respectively, insulating parts of the substrate received in the slots of the engaging frame, and cavities of the substrate receiving the first and second inserting parts; providing LED diodes, and connecting each LED diode electrically to the first and second electrodes; and cutting along the first and second inserting parts to make sides of the first and second inserting parts exposed to ambient air.

Abstract: A semiconductor light emitting device that includes a first conductive type semiconductor layer, a first electrode, a insulating layer, and an electrode layer. The first electrode has at least one branch on the first conductive type semiconductor layer. The insulating layer is disposed on the first electrode. The electrode layer is disposed on the insulating layer.

Abstract: A method of light-emitting diode (LED) packaging includes coupling a number of LED dies to corresponding bonding pads on a sub-mount. A mold apparatus having concave recesses housing LED dies is placed over the sub-mount. The sub-mount, the LED dies, and the mold apparatus are heated in a thermal reflow process to bond the LED dies to the bonding pads. Each recess substantially restricts shifting of the LED die with respect to the bonding pad during the heating.

Abstract: An optical emitter includes a Light-Emitting Diode (LED) on a package wafer, transparent insulators, and one or more transparent electrical connectors between the LED die and one or more contact pads on the packaging wafer. The transparent insulators are deposited on the package wafer with LED dies attached using a lithography or a screen printing method. The transparent electrical connectors are deposited using physical vapor deposition, chemical vapor deposition, spin coating, spray coating, or screen printing and may be patterned using a lithography process and etching.

Abstract: A LED Chip-on-Board (COB) module comprises a plurality of LED die arranged on a substrate in one or more radially concentric rings about a center point such that each LED die is azimuthally offset from neighboring LED die. The module includes thermal conduction pads each having lateral dimensions at least as large as the combined lateral dimensions of the LED die attached to it and a total surface area at least five times larger than the total surface area of all the LED die attached to it. At the same time, the total light emission area of the module is no greater than four times larger than the combined total surface emission area of all the individual LED die disposed on the substrate. A variety of configurations are possible subject to these criteria, which permit good packing density for enhanced brightness while ensuring optimal heat transfer. A method of manufacturing the module is also provided.

Abstract: Radiation-transducer devices, e.g., lighting-emitting devices, including radiation transducers, e.g., light-emitting diodes, and associated devices, systems, and methods are disclosed herein. A radiation-transducer device configured in accordance with a particular embodiment includes a base structure including a first lead, a cap structure including a second lead, and a plurality of radiation transducers irregularly distributed between the base structure and the cap structure. The radiation transducers are non-uniformly oriented relative to the first and second leads and the device is configured to intermittently power the radiation transducers using an alternating current. A method for manufacturing radiation-transducer devices in accordance with a particular embodiment includes distributing a plurality of radiation transducers onto a base structure or a cap structure without individually handling the radiation transducers.

Abstract: A vertical Light Emitting Diode (LED) device includes an epi structure with a first-type-doped portion, a second-type-doped portion, and a quantum well structure between the first-type-doped and second-type-doped portions and a carrier structure with a plurality of conductive contact pads in electrical contact with the epi structure and a plurality of bonding pads on a side of the carrier structure distal the epi structure, in which the conductive contact pads are in electrical communication with the bonding pads using at least one of vias and a Redistribution Layer (RDL). The vertical LED device further includes a first insulating film on a side of the carrier structure proximal the epi structure and a second insulating film on a side of the carrier structure distal the epi structure.

Abstract: According to one embodiment, a light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a first insulating layer, a p-side interconnect layer, an n-side interconnect layer, and a second insulating layer. The portion of the second p-side interconnect layer has the L-shaped cross section being configured to include a p-side external terminal exposed from the first insulating layer and the second insulating layer at a third surface having a plane orientation different from the first surface and the second surface. The portion of the second n-side interconnect layer has the L-shaped cross section being configured to include an n-side external terminal exposed from the first insulating layer and the second insulating layer at the third surface.

Abstract: Light emitter packages, systems, and methods having improved performance are disclosed. In one aspect, a light emitter package can include a submount that can include an anode and a cathode. A light emitter chip can be disposed over the submount such that the light emitter chip is mounted over at least a portion of the cathode and wirebonded to at least a portion of the anode.

Abstract: System for flash-free overmolding of LED array substrates. In an aspect, a method is provided for molding encapsulations onto an LED array substrate. The method includes attaching a protective tape onto a substrate surface of the substrate so that openings in the protective tape align with LED devices of the substrate and applying molding material onto a molding surface of a molding tool and to portions of the substrate exposed through the openings in the protective tape. The method also includes pressing the molding surface and the substrate surface together at a selected pressure and a selected temperature so that encapsulations are formed on the portions of the substrate exposed through the openings in the protective tape, separating the molding surface from the substrate surface, and removing the protective tape so that molding material flash is removed from the substrate leaving a clean molded substrate.

Abstract: A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material.

Abstract: LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features.

Abstract: A light emitting diode comprises a permanent substrate having a chip holding space formed on a first surface of the permanent substrate; an insulating layer and a metal layer sequentially formed on the first surface of the permanent substrate and the chip holding space, wherein the metal layer comprises a first area and a second area not being contacted to each other; a chip having a first surface attached on a bottom of the chip holding space, contacted to the first area of the metal layer; a filler structure filled between the chip holding space and the chip; and a first electrode formed on a second surface of the chip. The chip comprises a light-emitting region and an electrical connection between the first area of the metal layer and the light emitting region is realized by using a chip-bonding technology.

Abstract: An LED package includes a substrate having an electrically conductive portion and an electrically non-conductive portion composed of an oxide of the conductive portion; an LED mounted on the conductive portion and electrically connected to the conductive portion; a first electrode disposed on the non-conductive portion and electrically connected to the LED by a wire; and a second electrode disposed on the substrate and electrically connected to the LED.

Abstract: A method of fabricating a plurality of components using wafer-level processing can include bonding first and second wafer-level substrates together to form a substrate assembly, such that first surfaces of the first and second substrates confront one another, the first substrate having first electrically conductive elements exposed at the first surface thereof, forming second electrically conductive elements contacting the first conductive elements, and processing the second substrate into individual substrate elements. The second conductive elements can extend through a thickness of the first substrate and can be exposed at a second surface thereof opposite the first surface. The processing can include trimming material to produce the substrate elements at least some of which have respective different controlled thicknesses between first surfaces adjacent the first substrate and second surfaces opposite therefrom.

Abstract: Disclosed are a wafer level LED package and a method of fabricating the same. The method of fabricating a wafer level LED package includes: forming a plurality of semiconductor stacks on a first substrate, each of the semiconductor stacks comprising a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active region disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer; preparing a second substrate comprising first lead electrodes and second lead electrodes arranged corresponding to the plurality of semiconductor stacks; bonding the plurality of semiconductor stacks to the second substrate; and cutting the first substrate and the second substrate into a plurality of packages after the bonding is completed. Accordingly, the wafer level LED package is provided.

Abstract: In accordance with certain embodiments, light-emitting dies are fabricated on a substrate, separated from at least a portion of the substrate, and coated with a wavelength-conversion material.

Abstract: A high resolution active matrix backplane is fabricated using techniques applicable to flexible substrates. A backplane layer including active semiconductor devices is formed on a semiconductor-on-insulator substrate. The backplane layer is spalled from the substrate. A frontplane layer including passive devices such as LCDs, OLEDs, photosensitive materials, or piezo-electric materials is formed over the backplane layer to form an active matrix structure. The active matrix structure may be fabricated to allow bottom emission and provide mechanical flexibility.

Abstract: The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.

Abstract: An LED light module free of jumper wires has a substrate and multiple LED chips. The substrate has a positive side circuit, a negative side circuit, multiple first chip connection portions and multiple second connection portions. The first and second chip connection portions are respectively connected to the positive and negative side circuits, and are juxtaposedly and alternately arranged on the substrate so that a width between each first chip connection portion and a corresponding second chip connection portion is smaller than a width of each LED chip. Each LED chip can be directly mounted on corresponding first and second chip connection portions to electrically connect to the positive and negative side circuits. Accordingly, jumper wires for connecting the LED chips and the positive and negative side circuits can be removed to avoid broken jumper wires occurring when the LED light module is shipped or assembled.

Abstract: A method of fabricating a composite semiconductor structure includes providing a substrate including a plurality of devices and providing a compound semiconductor substrate including a plurality of photonic devices. The method also includes dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method further includes providing an assembly substrate, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, aligning the substrate and the assembly substrate, joining the substrate and the assembly substrate to form a composite substrate structure, and removing at least a portion of the assembly substrate from the composite substrate structure.

Abstract: The present invention provides a substrate for an optical semiconductor apparatus for mounting optical semiconductor devices, the substrate comprising first leads to be electrically connected to first electrodes of the optical semiconductor devices and second leads to be electrically connected to second electrodes of the optical semiconductor devices, wherein the first leads and the second leads are arranged each in parallel, a molded body of a thermosetting resin composition is molded by injection molding in a penetrating gap between the first leads and the second leads such that the substrate is formed in a plate shape, and an exposed front surface and an exposed back surface of the first leads, the second leads and the resin molded body each tie in a same plane. The substrate exhibits excellent heat dissipation properties and enables manufacture of a thin optical semiconductor apparatus with a low cost.

Abstract: Disclosed is a method for producing an electro-optical device, which includes a step of defining sealing materials on either an element substrate side of a mother substrate or an opposing substrate side of the mother substrate, a step of supplying liquid crystal inside the sealing materials, a step of bonding the element substrate side of the mother substrate and the opposing substrate side of the mother substrate together, and a step of hardening the sealing materials in order to apply a predetermined potential to a peripheral electrode provided between a pixel region and sealing materials in at least a portion of the steps.

Abstract: A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer encapsulating at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, the wavelength converting layer formed around the chip, a transparent plate located on the wavelength converting layer and a diffusing reflection member disposed between the frame and both side surfaces of the wavelength converting layer and the transparent plate. The device can be configured to improve the linearity of a boundary between the diffusing reflection member and both side surfaces by using the transparent plate, and therefore can be used for a headlight that can form a favorable horizontal cut-off line corresponding to the boundary via a projector lens without a shade.

Abstract: A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer in order to emit various colored lights including white light. The device can include a board, a frame located on the board, at least one light-emitting chip mounted on the board, the wavelength converting layer located between an optical plate and an outside surface of the chips so that a density of a peripheral region is lower than that of a middle region, and a reflective material layer disposed at least between the frame and a side surface of the wavelength-converting layer. The device can have the reflective material layer form each reflector and can use a wavelength converting layer having different densities, and therefore can emit a wavelength-converted light having a high light-emitting efficiency and a uniform color tone from various small light-emitting surfaces.

Abstract: Disclosed is an organic light emitting display device which prevents or inhibits external gas, such as, oxygen or moisture, from penetrating into a display unit and reinforces a mechanical strength by providing a first sealant and a second sealant. The organic light emitting display device may include: a first substrate; a display unit on the first substrate; a second substrate covering the display unit; a first sealant adhering the first substrate to the second substrate; and a second sealant around the first sealant, the second sealant sealing the first substrate and the second substrate. A filler may be included in the second sealant, and a particle size of the filler may be larger than a gap between the first substrate and the second substrate.

Abstract: A display device includes a display panel, a metal encapsulation sheet facing the display panel, a sealing member combining the display panel and the metal encapsulation sheet, and a coating layer covering the metal encapsulation sheet and the sealing member, the coating layer including a silicon-containing resin. A method of manufacturing the display device is also provided.

Abstract: Chip-on-film packages and device assemblies including the same may be provided. The device assembly includes a film package including a semiconductor chip, a panel substrate connected to one end of the film package, a display panel disposed on the panel substrate, and a controlling part connected to another end of the film package. The film package includes a film substrate, a first wire disposed on a top surface of the film substrate, and a second wire disposed on a bottom surface of the film substrate.

Abstract: A semiconductor light emitting element of the present invention includes a support substrate, a semiconductor film including a light emitting layer, a surface electrode provided on the surface on a light-extraction-surface side of the semiconductor film, and a light reflecting layer. The surface electrode includes first electrode pieces that form ohmic contact with the semiconductor film and a second electrode piece electrically connected to the first electrode pieces. The light reflecting layer includes a reflecting electrode, and the reflecting electrode includes third electrode pieces that form ohmic contact with the semiconductor film and a fourth electrode piece electrically connected to the third electrode pieces and placed opposite to the second electrode piece. Both the second electrode piece and the fourth electrode piece form Schottky contact with the semiconductor film so as to form barriers to prevent forward current in the semiconductor film.