Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: Some embodiments include methods of forming diodes. A stack may be formed over a first conductive material. The stack may include, in ascending order, a sacrificial material, at least one dielectric material, and a second conductive material. Spacers may be formed along opposing sidewalls of the stack, and then an entirety of the sacrificial material may be removed to leave a gap between the first conductive material and the at least one dielectric material. In some embodiments of forming diodes, a layer may be formed over a first conductive material, with the layer containing supports interspersed in sacrificial material. At least one dielectric material may be formed over the layer, and a second conductive material may be formed over the at least one dielectric material. An entirety of the sacrificial material may then be removed.

Abstract: A LED module and a packing method of the same include plural boards defined with a positive line and a negative line. The positive line connects to at least one positive joint, and the negative line connects to at least one negative joint. Some LEDs are respectively disposed on each board, and conducting ends of the LEDs are separately connected to the positive line and the negative line. A number of electronic elements are individually installed on each board, and conducting ends of the electronic elements are separately connected to the positive line and the negative line disposed on the board. A positive guiding line connects to the positive joint of each board, and a negative guiding line connects to the negative joint of each board. The LED module achieved in accordance with above-mentioned construction contributes to the flexibility.

Abstract: Disclosed herein is a method of forming a LED-based light for replacing a conventional fluorescent bulb in a fluorescent light fixture including providing a heat sink of highly thermally conductive material having opposing longitudinally extending edges, mounting a plurality of LEDs in thermally conductive relation with the heat sink and enclosing the plurality of LEDs within a light transmitting cover such that the longitudinally extending edges engage an Interior of the cover to support the heat sink within the light transmitting cover.

Abstract: In one embodiment, a semiconductor light emitting device includes a substrate, an electrically-conductive reflection film, an active region, a first electrode, a transparent conductive film and a second electrode. In the active region, a first transparent electrode, a first conductivity type contact layer, a light emitting layer, a second conductivity type contact layer and a second transparent electrode are formed and stacked on the electrically-conductive reflection film. The first electrode is provided away from the active region on the electrically-conductive reflection film. One end of the transparent conductive film is provided to cover the upper portion of the second transparent electrode, while the other end of the transparent conductive film is provided above the electrically-conductive reflection film through an insulating film. The transparent conductive film is in contact with a lateral surface of the active region through the insulating film.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: A method of fabricating an organic light emitting display is capable of improving device characteristics by patterning a plurality of organic layers of an emission layer and a charge transport layer using a thermal transfer method to optimize thicknesses of the organic layers corresponding to R, G and B pixels. The method includes: forming lower electrodes of R, G and B pixels on a substrate; forming an organic layer on the layer; and forming an upper electrode on the organic layer. Formation of the organic layer includes forming a portion of a hole injection layer and a hole transport layer of the R, G and B pixels over an entire surface of the substrate, the organic layer comprising a first portion and a second portion, the organic layer having a thickness equal to a sum of the thicknesses of the hole injection layer and the hole transport layer. Formation of the organic layer further comprises patterning the second portion of the organic layer, and patterning emission layers of the R, G and B pixels.

Abstract: A light emitting assembly (10) includes an aluminum heat sink (12) having a plurality of elongated slots (18) which space and define a plurality of sections (20). A pair of fins (30) extend from each section (20) along opposite sides of each elongated slot (18). A plurality of integral bridges (26) extend across the elongated slots (18). A screen (54) is disposed over each of the elongated slots (18). A light transmissive independent cover (44) is adhesively secured to each of the sections (20) around the light emitting diodes (28) so that one cover (44) independently covers the light emitting diodes (28) on each of the sections (20). The covers (44) are separated by the elongated slots (18). A housing (50) is spaced from the fins (30) and includes vents (52) whereby cooling air passes through the slots (18), over the fins (30), and out the vents (52).

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: Provided herein are electronic devices including arrays of printable light emitting diodes (LEDs) having device geometries and dimensions providing enhanced thermal management and control relative to conventional LED-based lighting systems. The systems and methods described provide large area, transparent, and/or flexible LED arrays useful for a range of applications in microelectronics, including display and lightning technology. Methods are also provided for assembling and using electronic devices including thermally managed arrays of printable light emitting diodes (LEDs).

Abstract: To allow a direct connection of a light source to a 230V/50 Hz or 120V/60 Hz AC network and to ensure safe operation and easy adaptation to user requirements when mounting, the light source includes a series connection which is connected to a bridge rectifier (GL) and includes at least two LED arrays strands, which have several interconnected individual LEDs, and a pre-resistor, which are arranged on a plate-like, electrically contacting carrier that dissipates heat, has protection against contact and carries the at least two array-LED-strands. For direct operation in an AC voltage supply, the sum of the flow voltages of the LED arrays (U1 . . . Un) is dimensioned such that it is equivalent to at least 75%, preferably 80% and a maximum of 85% of the amplitude of the rectified AC voltage at the nominal voltage, and that the array-LED-strand will be conductive if crossing the sum of flow voltages.

Abstract: A first method comprises providing a plurality of organic light emitting devices (OLEDs) on a first substrate. Each of the OLEDs includes a transmissive top electrode. The plurality of OLEDs includes a first portion of OLEDs and a second portion of OLEDs that is different from the first portion. The first method further includes depositing a first capping layer over at least the first portion of the plurality of OLEDs such that the first capping layer is optically coupled to at least the first portion of the plurality of OLEDs. A second capping layer is deposited over at least the second portion of the plurality of OLEDs such that the second capping layer is optically coupled to the second portion of the plurality of OLEDs but not the first portion of the plurality of OLEDs.

Abstract: An organic light emitting diode (OLED) display includes a substrate main body, a plurality of organic light emitting elements on the substrate main body, a column spacer on the substrate main body and between two or more of the plurality of organic light emitting elements, and an encapsulation thin film covering at least one of the organic light emitting elements and having regions divided by the column spacer.

Abstract: Semiconductor material is formed on a host substrate of a material exhibiting optical transparency with an intervening radiation lift off layer. A transfer device, intermediate substrate or target substrate is brought into adhesive contact with the semiconductor material and the radiation lift off layer is irradiated to weaken it, allowing the semiconductor material to be transferred off the host substrate. Electronic devices may be formed in the semiconductor layer while it is attached to the host substrate or the intermediate substrate.

Abstract: A method for manufacturing a holder of an LED package structure includes steps: providing first and second electrical portions; providing a mold including an upper die and a bottom die, the bottom die defining a receiving groove in a top surface thereof, the upper die including a core component and a wall around and spaced from the core component; putting the first and second electrical portions in the receiving groove of the bottom die, mounting the upper die on the bottom die; injecting liquid molding material into the receiving groove of the bottom die through a sprue between the wall and the core component; solidifying the liquid molding material and removing the upper die and the bottom die to obtain the holder which includes the first and second electrical portions and the solidified liquid molding material.

Abstract: Light emitter device packages, modules and methods are disclosed having a body and a cavity that can be formed from a single substrate of material. The material can be thermally conductive and/or metallic. A light emitter device package can have at least one isolating layer creating at least a first isolated portion of the body and/or first isolated portion of the cavity. The isolating layer can be formed from the same material as the single substrate which forms the package body and cavity, and can be a layer which is thermally and electrically isolated. A light emitter or light emitter device, such as an LED chip can be mounted upon a surface of the cavity and upon at least a portion of the isolating layer.

Abstract: A manufacturing method of nitride semiconductor light emitting elements, which can reliably form a mechanically stable wiring electrode leading from a light emitting element surface. A structure protective sacrifice layer is formed around a first electrode layer on a device structure layer beforehand, and after separation of the device structure layer into respective portions for the light emitting elements, the resultant is stuck to a support substrate. Subsequently, forward tapered grooves reaching the structure protective sacrifice layer are formed, and the inverse tapered portion formed outward of the forward tapered groove is lifted off in a lift-off step. Thus, an insulating layer is formed on the forward tapered side walls of the light emitting element, and a wiring electrode layer electrically connected to the second electrode layer on the principal surface of the light emitting element is formed on the insulating layer.

Abstract: Methods and devices for light emitting diode (LED) chips are provided. In one embodiment of a method, a pre-formed capping wafer is provided, with the capping wafer comprising a conversion material. A wire-bond free LED wafer is fabricated comprising a plurality of LEDs. The capping wafer is bonded to the LED wafer using an adhesive. The LED chips are later singulated upon completion of all final fabrication steps. The capping wafer provides a robust mechanical support for the LED chips during fabrication, which improves the strength of the chips during fabrication. Additionally, the capping wafer may comprise an integrated conversion material, which simplifies the fabrication process. In one possible embodiment for an LED chip wafer, a submount wafer is provided, along with a plurality of LEDs flip-chip mounted on the submount wafer. Additionally, a capping wafer is bonded to the LEDs using an adhesive, and the capping wafer comprises a conversion material.

Abstract: A light-emitting device having improved light conversion efficiency, a light-emitting system including the same, and fabricating methods of the light-emitting device and the light-emitting system, are provided. The light-emitting device includes one or more light-emitting elements arranged on one surface of a substrate, and a phosphor layer disposed inside or on the substrate to a predetermined thickness and partially wavelength-converts the light emitted from the one or more light-emitting elements into light having different wavelength, wherein a light conversion efficiency of the phosphor layer is maximized when the phosphor layer has the predetermined thickness.

Abstract: An optoelectronic headlight which emits electromagnetic radiation is specified, which has a luminescence diode chip with at least two spatial emission regions or which has at least two luminescence diode chips each having at least one spatial emission region. The headlight is suitable in particular for a front headlight for motor vehicles. The emission regions, in a plan view of a main extension plane associated with them, are shaped differently, are of different sizes and/or are not shaped rectangularly and are differently oriented. Particularly preferably, the emission regions can be driven independently of one another. Methods for production of an optoelectronic headlight and a luminescence diode chip are furthermore specified.

Abstract: High-brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion are provided. In one aspect, a high brightness package for a light emitter (e.g., a LED or LED chip) can include a body and a cavity disposed in the body. The cavity can include at least one cavity wall extending toward an intersection area of the body where the cavity wall intersects a cavity floor. The package can further include at least one electrical element having first and second surfaces, each of the first and second surfaces proximate the intersection area. The first surface can be disposed on a first plane and the second surface can be at least partially disposed on a second plane that is different than the first plane. The body can at least substantially cover the second surface.

Abstract: A method for packaging an airtight multi-layer array type LED is disclosed. The method includes: integrally forming a metal substrate with an airtight metal frame surrounding an accommodating space; forming a light outlet platform surrounding a light outlet opening on a bottom of the accommodating space; forming two horizontal sealing through holes in the airtight metal frame, wherein each sealing through hole has one lead frame inserted therethrough, and all interstitial space in the two horizontal sealing through holes is completely sealed with a sealing material; disposing the optical units and optical components in the accommodating space; sequentially forming a dice protection layer, a fluorescent layer, and a silicone layer on the LED dices; and installing an optical glass cover on the top surface of the airtight metal frame to seal the packaging structure of the present invention.

Abstract: Disclosed are a method for fabricating a GaN LED array device for optogenetics and a GaN LED array device fabricated thereby.

Abstract: An LED array comprises a growth substrate and at least two separated LED dies grown over the growth substrate. Each of LED dies sequentially comprise a first conductive type doped layer, a multiple quantum well layer and a second conductive type doped layer. The LED array is bonded to a carrier substrate. Each of separated LED dies on the LED array is simultaneously bonded to the carrier substrate. The second conductive type doped layer of each of separated LED dies is proximate to the carrier substrate. The first conductive type doped layer of each of LED dies is exposed. A patterned isolation layer is formed over each of LED dies and the carrier substrate. Conductive interconnects are formed over the patterned isolation layer to electrically connect the at least separated LED dies and each of LED dies to the carrier substrate.

Abstract: A first device and methods for manufacturing the first device are provided. The first device may comprise a flexible substrate and at least one organic light emitting device (OLED) disposed over the flexible substrate. The first device may have a flexural rigidity between 10?1 Nm and 10?6 Nm, and the ratio of the critical strain energy release rate to the material density factor for the first device may be greater than 0.05 J m/Kg.

Abstract: An optoelectronic module includes a semiconductor structure with a substrate having a first side and a second side, a first layered structure deposited on the first side, and a second layered structure deposited on the second side. The optoelectronic module also includes driver circuitry fabricated of the first layered structure and a diode laser fabricated of the second layered structure. The driver circuitry produces a drive electrical signal supplied to the diode laser, and the diode laser produces an optical output in response to the drive electrical signal. In a preferred embodiment, the optoelectronic module also includes a temperature-sensitive element fabricated of the first or the second layered structure. The temperature-sensitive element produces a temperature dependent control signal related to the diode laser temperature.

Abstract: A laser diode system is disclosed in which a substrate made of a semiconductor material containing laser diodes is bonded to a substrate made from a metallic material without the use of any intermediate joining or soldering layers between the two substrates. The metal substrate acts as an electrode and/or heat sink for the laser diode semiconductor substrate. Microchannels may be included in the metal substrate to allow coolant fluid to pass through, thereby facilitating the removal of heat from the laser diode substrate. A second metal substrate including cooling fluid microchannels may also be bonded to the laser diode substrate to provide greater heat transfer from the laser diode substrate. The bonding of the substrates at low temperatures, combined with modifications to the substrate surfaces, enables the realization of a low electrical resistance interface and a low thermal resistance interface between the bonded substrates.

Abstract: In one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a plurality of light emitting regions on a major surface of a support substrate. The method can include forming V-shaped grooves by anisotropic etching between the plurality of light emitting regions in the major surface of the support substrate. In addition, the method can include dividing the support substrate at positions of the grooves to separate the light emitting regions.

Abstract: A method for manufacturing LEDs includes following steps: forming circuit structures on a substrate, each circuit structure having a first metal layer and a second metal layer formed on opposite surfaces of the substrate and a connecting section interconnecting the first and second metal layers; cutting through each circuit structure along a middle of the connecting section to form first and second electrical connecting portions insulated from each other via a gap therebetween; arranging LED chips on the substrate and electrically connecting the LED chips to the first and second electrical connecting portions; forming an encapsulation on the substrate to cover the LED chips; and cutting through the substrate and the encapsulation between the first and second electrical connecting portions of neighboring circuit structures to obtain the LEDs.

Abstract: An LED array module is manufactured by: attaching an upper conductive layer to a lower conductive layer by an insulative adhesion layer; forming an insulating layer on the entire exposed surface of the upper conductive layer and the lower conductive layer; forming a plurality of LED mounting regions by machining the upper conductive layer so the upper surface of the lower conductive layer is exposed; mounting an LED in each of the LED mounting regions for supplying power to the LED by the lower and upper conductive layers; charging each of the LED mounting regions with an insulating and transparent resin; and forming respective separation grooves in the upper layer and lower conductive layers abreast in a width direction such that each of the upper and lower conductive layers is divided into a plurality of slices.

Abstract: According to one embodiment, an LED package includes a first leadframe and a second leadframe mutually-separated, an LED chip and a resin body. The LED chip is provided above the first and second leadframes. One terminal of the LED chip is connected to the first leadframe. One other terminal is connected to the second leadframe. The resin body covers an entire upper surface, a portion of a lower surface, and a portion of an end surface of each of the first and second leadframes. The resin body covers the LED chip. Remaining portions of the lower surface and the end surface of each of the first and second leadframes are exposed on the resin body. First and second recesses are made between the remaining portions of the first and second leadframes. An inner surface of each of the first and second recesses is not covered with the resin body.

Abstract: There is provided a light emitting diode operating under AC power comprising a substrate; a buffer layer formed on the substrate; and a plurality of light emitting cells formed on the buffer layer to have different sizes and to be electrically isolated from one another, the plurality of light emitting cells being connected in series through metal wires. According to the present invention, light emitting cells formed in an LED have different sizes, and thus have different turn-on voltages when light is emitted under AC power, so that times when the respective light emitting cells start emitting light are different to thereby effectively reduce a flicker phenomenon.

Abstract: A sealing filler for an organic light emitting device display includes a siloxane polymer having a surface tension of about 20 dyn/cm or less. The siloxane polymer may be represented by where each of R1 to R10 is independently a non-polar substituent, and n ranges from 20 to 50.

Abstract: A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.

Abstract: This invention relates to light guide devices and methods of manufacture. The light guide device is suitable for use in a range of applications, particularly in connection with the backlighting of displays, for example, liquid crystal displays.

Abstract: An LED device and an LED lighting apparatus using the same can include a casing including a cavity and at least one pair of LED chips including a first and second LED chips. The LED chips can be adjacently located in the cavity, and an encapsulating resin including a phosphor can be disposed in the cavity so as to encapsulate the LED chips. A light-emitting surface of the first LED chip can be covered with a transparent resin, and therefore color temperatures of light emitted from the first and second LED chips can be located on a substantially black body due to a difference between their distances to the encapsulating resin. Thus, the LED lighting apparatus using the LED device can selectively emit white light having a preferable color temperature that is close to a natural color between the color temperatures by adjusting current applied to the LED chips.

Abstract: An embodiment of a method to form a hybrid integrated circuit device is described. This embodiment of the method comprises: forming a first die using a first lithography, where the first die is on a substrate; and forming a second die using a second lithography, where the second die is on the first die. The first lithography used to form the first die is a larger lithography than the second lithography used to form the second die. The first die is an IO die.

Abstract: A light-emitting element includes: a carrier; an adhesive layer formed on the carrier; and a plurality of light-emitting units disposed separately on the conductive adhesive layer, wherein each of the light-emitting units includes a first semiconductor layer, a light-emitting layer surrounding the first semiconductor layer, a second semiconductor layer surrounding the light-emitting layer; and a conductive structure connecting the first semiconductor layers of the light-emitting units to each other.

Abstract: In producing a semiconductor light-emitting chip whose substrate is composed of a sapphire single crystal, cracking in semiconductor light-emitting elements in the obtained semiconductor light-emitting chip is suppressed.

Abstract: An object of the present invention to improve reliability of a light emitting device having a mixed layer including an organic compound and metal oxide without reducing productivity. The above object is solved in such a way that after forming the mixed layer including the organic compound and metal oxide, the mixed layer is exposed to a nitrogen gas atmosphere without being exposed to a gas atmosphere including oxygen, and then a stacked film is formed over the mixed layer without exposing the mixed layer to a gas atmosphere including oxygen.

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract: An OLED display includes: a substrate; an organic light emitting element formed on the substrate and including a first electrode, an emission layer, and a second electrode; and an encapsulation layer formed on the substrate while covering the organic light emitting element. The encapsulation layer includes an organic layer and an inorganic layer, and a protrusion and depression structure is formed in an interface between the organic layer and the inorganic layer.

Abstract: An organic light emitting diode (OLED) display a includes: a substrate; an organic light emitting element on the substrate and including a first electrode, a light emission layer, and a second electrode; and an encapsulation layer on the substrate while covering the organic light emitting element. The encapsulation layer includes an organic layer and an inorganic layer. A mixed area, where organic materials forming the organic layer and inorganic materials forming the inorganic layer co-exist along a plane direction of the encapsulation layer, is formed at the boundary between the organic layer and the inorganic layer.

Abstract: A method for fabricating a light emitting device includes forming a trench in a first surface on a first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second side opposite to the first side of the substrate. The method also includes forming light emission layers over the first trench surface and the first surface, wherein the light emission layer is configured to emit light and removing at least a portion of the substrate from the second side of the substrate to form a protrusion on the second side of the substrate to allow the light emission layer to emit light out of the protrusion on the second side of the substrate.

Abstract: Various embodiments of methods and systems for designing and constructing displays from multiple light emitting elements are disclosed. Display elements having different light emitting and self-organizing characteristics may be used during display assembly.

Abstract: An LED device and LED module are provided. The LED device is coupled to a lead frame with a first plane and a second plane opposite to the first plane, the lead frame having a LED chip disposed on the first plane. The LED device includes a reflection cup structure disposed on the lead frame, a lens structure and at least one fixing structure. The LED chip is disposed in the reflection cup structure and electrically connected to the first plane of the lead frame. The lens structure covers the first plane and the second plane of the lead frame. The fixing structure and the fixing structures are formed integrally and cover the lead frame cooperatively.

Abstract: An organic light emitting diode display capable of reducing the shortening of image stacking lifetime caused by the residue of the barrier ribs produced during the forming of the barrier ribs is provided. The display includes: a substrate; a first pixel electrode formed on the substrate; barrier ribs formed on the substrate, and having an opening exposing the first pixel electrode; a second pixel electrode formed on the first pixel electrode; an organic light emitting member formed on the second pixel electrode; an organic light emitting member formed on the second pixel electrode; a common electrode formed on the organic light emitting member; and a thin film encapsulation member covering the common electrode. The width of the second pixel electrode is greater than the exposure width of the first pixel electrode exposed through the opening of the barrier ribs.

Abstract: A light emitting diode (LED) array including an assembly of LED packages is provided. The LED packages are mounted to a face of a substructure including a circuit board and a heat transfer plate. Each LED package includes electrical connection terminals and a thermal connection pad, the electrical connection terminals are electrically connected to respective circuit conductors of the circuit board, the thermal pads are connected to the heat transfer plate by respective thermally conductive connections, and at least one of the LED packages is tilted at an angle relative to an adjacent portion of the face of the substructure.