Abstract: In accordance with certain embodiments, semiconductor dies are embedded within polymeric binder to form, e.g., light-emitting dies and/or composite wafers containing multiple light-emitting dies embedded in a single volume of binder.

Abstract: The present disclosure is directed to circuitry configurable based on device orientation. Example circuitry may comprise at least one device location and configurable conductors. The at least one device location may include at least two conductive pads onto which a device may be populated by a manufacturing process. The configurable conductors may be coupled to each of the at least two conductive pads. The configurable conductors may be configured by adding conductive material to at least one configurable conductor or subtracting at least part of at least one configurable conductor. For example, conductive material may be added to close a space between two segments of a configurable conductor to form a conduction path. Alternatively, at least part of at least one of a plurality of configurable conductors coupled to a conductive pad may be subtracted (e.g., cut) to stop conduction in the at least one configurable conductor.

Abstract: A colour tunable lighting module is described which includes at least three solid state lighting emitters (such as light emitting diodes) and at least two wavelength converting elements (such as phosphors). The three solid state lighting emitters are formed of the same semiconductor material system and the light generated by them has dominant wavelengths in the blue-green-orange range of the optical spectrum. The two wavelengths converters are used re-emit some of the light from two of the emitters in broader spectra having longer dominant wavelengths, while the third emitter is selected to emit light at a wavelength between the dominant wavelengths of the light from the two emitters and the two converters. A control system may be employed to monitor and control the module and the lighting module can be optimised for tunable high colour quality white light applications.

Abstract: Submount based light emitter components and methods are provided herein. In one aspect, a submount based light emitter component can include a primary submount, a secondary submount, and at least one light emitter chip. The at least one light emitter chip can be disposed over the primary submount and electrically connected to the secondary submount.

Abstract: Several embodiments of light emitting diode packaging configurations including a substrate with a cavity are disclosed herein. A patterned wafer has a plurality of individual LED attachment sites, and an alignment wafer has a plurality of individual cavities. The patterned wafer and the alignment wafer are superimposed with the LED attachment sites corresponding generally to the cavities of the alignment wafer. At least one LED is placed in the cavities using the cavity to align the LED relative to the patterned wafer. The LED is electrically connected to contacts on the patterned wafer, and a phosphor layer is formed in the cavity to cover at least a part of the LED.

Abstract: A semiconductor light emitting device comprises a semiconductor light emitting element comprising a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated, and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench. The semiconductor light emitting device further comprises a first transparent sealing resin covering at least a portion of the semiconductor light emitting element, the first transparent sealing resin comprising a plurality of first fluorescent particles, each of the first fluorescent particles having an individual average particle diameter. A width of the trench is smaller than an overall average of the individual average particle diameters of the first fluorescent particles.

Abstract: The present disclosure relates to an annealing apparatus and an annealing method, which are applied to the packaging art of the AMOLED panel, wherein the annealing apparatus comprises an electromagnetic wave generator coupled with a plurality of irradiators and comprises a plate whose surface is provided with the irradiators and which is placed above or below the AMOLED panel for annealing it. The method comprises the following steps: annealing the AMOLED panel by an annealing apparatus which comprises an electromagnetic wave generator and a plate having lots of irradiators; when the irradiators aim at the annealing area, the annealing areas are annealed by the high frequency electromagnetic wave generated by the electromagnetic wave generator and irradiated from the irradiators. The present disclosure can save the time of the annealing process and can improve the process situation. Meanwhile, the present disclosure increases production yield and improves product quality.

Abstract: An organic light-emitting display and methods of manufacturing the same are disclosed. In one aspect, an organic light-emitting apparatus includes a substrate, a display unit on the substrate, a step compensation layer formed on the display unit and supplementing a step on a surface of the display unit, a first intermediate layer formed on the step compensation layer, and an encapsulation layer formed on the first intermediate layer and sealing the display unit.

Abstract: An organic light emitting diode display device includes a first substrate; a conductive line formed on a first surface of the first substrate; an organic light emitting diode and an encapsulation layer on the conductive line; a second substrate on the encapsulation layer; a conductive pad connected to the conductive line and arranged in a through hole passing through the first substrate; and a driving circuit unit on a second surface opposite the first surface of the first substrate and connected to the conductive pad.

Abstract: A system for self-aligning assembly and packaging of semiconductor lasers allows reduction of time, cost and testing expenses for high power density systems. A laser package mounting system, such as a modified TO-can (transistor outline can), has modifications that increase heat transfer from the active laser to a heat exchanger or other heat sink. A prefabricated heat exchanger assembly mounts both a laser package and one or more lenses. Direct mounting of a fan assembly to the package further minimizes assembly steps. Components may be physically and optically aligned during assembly by clocking and other indexing means, so that the entire system is self-aligned and focused by the assembly process without requiring post-assembly adjustment. This system can lower costs and thereby enable the use of high powered semiconductor lasers in low cost, high volume production, such as consumer items.

Abstract: Aspects of the present invention are directed toward donor substrate, method of manufacturing donor substrate, and method of manufacturing organic light-emitting display device. According to an embodiment of the present invention, a donor substrate includes a base layer which includes an element region and an encapsulation region surrounding the element region; a transfer assist layer which is disposed on the base layer and includes a first uneven portion disposed on the encapsulation region; and a transfer layer which is disposed on the transfer assist layer. The first uneven portion is formed on a surface of the transfer assist layer which contacts the transfer layer.

Abstract: In a method of manufacturing an organic electroluminescent display, when a substrate including first and second pixel areas is prepared, a first mask including openings is disposed on the substrate to respectively correspond to the first and second pixel areas, and a second mask including an opening corresponding to the first pixel area is disposed on the first mask to expose the first pixel area and cover the second pixel area. Then, a first organic light emitting material is provided to the substrate to form the first organic light emitting material in the first pixel area and the second mask is removed from the substrate to expose the first and second pixel areas. Thereafter, a second organic light emitting material is provided to the substrate to form the second light emitting material in the first and second pixel areas and the first mask is removed from the substrate.

Abstract: It is known that a light-emitting element utilizing organic EL deteriorates due to moisture. Therefore, a sealing technique to prevent moisture permeation is important. A light-emitting device including a light-emitting element utilizing organic EL is manufactured over a support substrate having flexibility and a high heat dissipation property (e.g., stainless steel or duralumin), and the light-emitting device is sealed with a stack body having moisture impermeability and a high light-transmitting property or with glass having moisture impermeability and a high light-transmitting property and having a thickness greater than or equal to 20 ?m and less than or equal to 100 ?m.

Abstract: A flat panel display device and a manufacturing method thereof are provided. The flat panel display device includes: a display unit on a substrate; and a sealing structure on the substrate covering the display unit to seal the display unit, the sealing structure including at least one first layer including an inorganic material and at least one second layer including an organic material. The sealing structure includes at least one micro gap, and the micro gap includes an identification material including a fluorescent substance or a dye.

Abstract: An organic light-emitting display apparatus and a method of manufacturing the organic light-emitting display apparatus. The organic light-emitting display apparatus includes a substrate; a display unit on the substrate; and an encapsulating layer encapsulating the display unit. The encapsulating layer is formed of a low-temperature viscosity transition inorganic material. The encapsulating layer includes nitrogen.

Abstract: The present application relates to a method for fabricating an organic light emitting display device, comprising: forming a drive thin film transistor on a substrate at a non-light emission region; forming a protective layer on the substrate; forming a color filter on the protective layer; forming a planarizing layer on a protective layer including the color filter; selectively removing the protective layer and the light compensating layer to form a first drain contact hole which exposes a drain electrode of the drive thin film transistor; forming a light compensating layer on the planarizing layer to have a second drain contact hole which exposes the first contact hole, and a dummy hole to expose the planarizing layer; and forming an organic light emitting element on the light compensating layer to be in contact with the drain electrode through the first and second drain contact holes.

Abstract: Disclosed is a method for producing an electro-optical device, which includes a step of defining sealing materials on either an element substrate side of a mother substrate or an opposing substrate side of the mother substrate, a step of supplying liquid crystal inside the sealing materials, a step of bonding the element substrate side of the mother substrate and the opposing substrate side of the mother substrate together, and a step of hardening the sealing materials in order to apply a predetermined potential to a peripheral electrode provided between a pixel region and sealing materials in at least a portion of the steps.

Abstract: An organic light emitting display device includes a substrate, a display unit on the substrate, and an encapsulation layer on the display unit, the encapsulation layer including a plurality of alternating inorganic and organic films, at least one of the organic films being a patterned organic film, and the patterned organic film having a plurality of high refractive index portions in an organic matrix.

Abstract: An organic light-emitting display apparatus and a manufacturing method thereof. The organic light-emitting display apparatus includes a substrate, a display unit arranged on the substrate, a dam unit arranged at a periphery of the display unit and on the substrate and an encapsulating layer to encapsulate the display unit, wherein the encapsulating layer includes an organic film covering the display unit, and an inorganic film covering the organic film and the dam unit, and wherein a hardness of the dam unit is lower than that of the inorganic film. According to this, lateral moisture-proof characteristics of the organic light-emitting display apparatus are improved.

Abstract: A method for manufacturing a semiconductor device including: forming a wiring layer on a surface side of a first semiconductor wafer; forming a buried film so as to fill in a level difference on the wiring layer, the level difference being formed at a boundary between a peripheral region of the first semiconductor wafer and an inside region being on an inside of the peripheral region, and the level difference being formed as a result of a surface over the wiring layer in the peripheral region being formed lower than a surface over the wiring layer in the inside region, and making the surfaces over the wiring layer in the peripheral region and the inside region substantially flush with each other; and opposing and laminating the surfaces over the wiring layer formed in the first semiconductor wafer to a desired surface of a second semiconductor wafer.

Abstract: An organic light-emitting display system and a method of manufacturing the same are disclosed. In one aspect, the organic light-emitting display system includes a substrate, a display unit that defines an active area on the substrate and includes a plurality of thin film transistor (TFTs), and an encapsulation layer that seals the display unit and has a stacked structure in which at least a first inorganic film, a first organic film, and a second inorganic film are sequentially stacked. The TFTs includes an active layer, a gate electrode, a source electrode, a drain electrode, and an interlayer insulating film that is disposed between the gate electrode and the source electrode and between the gate electrode and the drain electrode, wherein the second inorganic film directly contacts the interlayer insulating film outside the active area.

Abstract: A light emitting device (LED) module, and manufacturing method of the same, which may be applied to various applications is provided. The LED module may be miniaturized by directly mounting an LED and a lens unit on a substrate, and price competitiveness may be enhanced by lowering a fraction defective and increasing yield of the LED module. In a method of manufacturing an LED module, an operation may be minimized and simplified by directly mounting LEDs and a plurality of lens units having various shapes, collectively forming the plurality of lens units, and by performing the operation on a wafer level. A heat radiation characteristic may be enhanced through use of a metallic material as a substrate and a bump.

Abstract: A display device is provided with a reinforced power line. The display device includes a common power line. A light emission layer is interposed between a first and a second electrode. A passivation layer is formed over the second electrode and has a stepped shape. An auxiliary metal layer is coupled to a common power line. At least a portion of the auxiliary metal layer is formed over the passivation layer and has a shape that follows the stepped shape of the passivation layer.

Abstract: An light-emitting diode (LED) package includes a substrate, a electrode structure embedded in the substrate, and a plurality of LED chips electrically connecting with the electrode structure. The substrate includes a main portion and a protruding portion extending from a bottom surface of the main portion. The main portion is located above the protruding portion. The electrode structure includes a first, a second and a third electrode spaced from each other. The third electrode is located between the first and second electrodes. Top surfaces of the first, second and third electrodes are exposed out of the top surface of the main portion. Bottom surfaces of the first and second electrodes are exposed out of the bottom surface of the main portion. Bottom surface of the third electrode is covered by the protruding portion. The present disclosure also relates to a method for manufacturing the LED package.

Abstract: An organic light-emitting display apparatus and a method of manufacturing the same are provided. The organic light-emitting display apparatus includes a substrate, an organic light-emitting device on the substrate, an encapsulation layer covering the organic light-emitting device, and a low adhesive layer covering the encapsulation layer.

Abstract: An LED device includes a substrate having a top surface and a bottom surface. The substrate defines a through hole at a center thereof. The LED device also includes an electrode board. The electrode board defines a concave portion at a center thereof, and a convex portion connected to and surrounding two sides of the concave portion. The concave portion includes a first electrode and a second electrode isolated from each other, and is located in the through hole of the substrate. A bottommost surface of the concave portion is substantially coplanar with the bottom surface of the substrate, and a top surface of the convex portion is substantially coplanar with the top surface of the substrate. An LED chip is arranged on the concave portion, and is electrically connected to the first electrode and the second electrode. A method for manufacturing plural such LED devices is also provided.

Abstract: This invention discloses an AC-type vertical light emitting element and fabrication method thereof, which achieves polarity reversal of two LEDs via regional laser stripping and die bonding. The two LEDs are placed on a conductive substrate (e.g. Si substrate); therefore, the bonding pads of the two LEDs are on the back of the conductive substrate and the light emitting surfaces of the two LEDs, thus overcoming such problems of low light emitting efficiency and high thermal resistance of the traditional lateral structure.

Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.

Abstract: A system and method for interconnecting LED modules that receive electrical energy from a direct current electrical energy power supply includes a first type of mating connector to provide an input of direct current electrical energy to a printed circuit board contained within an interconnectable LED module and a second type of mating connector to provide an output of direct current electrical energy to and interconnecting with another interconnectable LED module. The second type of mating connector attaches to the first type of mating connector in the next LED module in a string of interconnectable LED modules.

Abstract: An organic light-emitting device includes a base plate, an organic light-emitting body formed on the base plate, a heat-transferring filling material formed around the organic light-emitting body to cover the organic light-emitting body, the heat-transferring filling material having an electrically insulating property, and a sealing plate arranged on the heat-transferring filling material.

Abstract: A thin film deposition apparatus that is suitable for manufacturing large-sized display devices on a mass scale and that can be used for high-definition patterning, a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus, and an organic light-emitting display device manufactured by using the method.

Abstract: A pattern forming method includes: a modification treatment step of, in accordance with a pattern to be formed on a pattern forming surface of a base body, applying a light beam having a width smaller than a diameter of each of dots to constitute the pattern, onto a treatment target region including at least outer edges on both sides in a width direction of a region where the pattern is to be formed in the pattern forming surface, thereby carrying out modification treatment on the treatment target region; and a droplet deposition step of ejecting and depositing droplets of a functional liquid by an inkjet method onto the region where the pattern is to be formed including the treatment target region where the modification treatment has been carried out.

Abstract: A semiconductor package includes a transmissive support plate and includes at least one elongate hole. An integrated circuit semiconductor device is mounted on a rear face of the support plate. The semiconductor device includes first and second optical elements oriented towards the rear face of the support plate, where the first and second optical elements are placed on either side of the elongate hole. An encapsulation material made of an opaque material encapsulates the semiconductor device and fills the elongate hole so as to form an optical insulation partition between the first and second optical elements. A cavity is left, however, between each optical element and a rear face of the support plate.

Abstract: Solid state lighting (SSL) devices including a plurality of SSL emitters and methods for manufacturing SSL devices are disclosed. Several embodiments of SSL devices in accordance with the technology include a support having a first lead and a second lead, a plurality of individual SSL emitters attached to the support, and a plurality of lenses. Each SSL emitter has a first contact electrically coupled to the first lead of the support and a second contact electrically coupled to the second lead of the support such that the SSL emitters are commonly connected. Each lens has a curved surface and is aligned with a single corresponding SSL emitter.

Abstract: An integrated circuit including a die of the integrated circuit, the die including an insulating layer, light emitting diodes, a semiconductor layer, and a control module. The insulating layer includes a first side and a second side. The second side is opposite to the first side. The light emitting diodes are arranged on the first side of the insulating layer. The semiconductor layer is arranged adjacent to the second side of the insulating layer. The light emitting diodes are connected to the semiconductor layer using connections from the first side of the insulating layer to the second side of the insulating layer. The control module is arranged on the semiconductor layer. The control module is configured to output pulse width modulated pulses to the light emitting diodes via the connections.

Abstract: Disclosed is an organic light emitting diode (OLED) display comprising a substrate; an organic light emitting element disposed on the substrate; an encapsulation substrate disposed on the organic light emitting element; and an adhesive layer formed on the substrate, covering the organic light emitting element, and bonding the substrate on which the organic light emitting element is formed with the encapsulation substrate.

Abstract: A method for manufacturing a light emitting device comprises a package preparation step of preparing a package having a recess in which a light emitting element is locatable, wherein the package includes a projection extending from an upper surface of the package, the projection at least partially surrounding the recess, a sealing resin forming step of filling said recess in which said light emitting element is located with a sealing resin, and providing said sealing resin higher than the height of said package, and a sealing resin cutting step of cutting the sealing resin such that an upper surface of the sealing resin is at a height that is substantially the same as a height of the upper surface of the package.

Abstract: A method of manufacturing a device based on LEDs includes the growth of semiconducting nanowires on a first electrode produced on an insulating face, and encapsulation thereof in planarizing material; the formation, on the planarizing material, of a second electrode with contact take-up areas. LEDs are formed by releasing a band of the first electrode around each take-up area, including forming a mask defining the bands on the second electrode, chemically etching the planarizing material, stopped so as to preserve planarizing material, chemically etching the portion of nanowires thus released, and then chemically etching the remaining planarizing material. A trench is formed along each of the bands as far as the insulating face and the LEDs are placed in series by connecting the take-up areas and bands of the first electrode.

Abstract: The organic electroluminescence display device of an embodiment of the present invention includes a substrate, a plurality of pixels formed on the substrate, and a sealing film that covers the plurality of pixels. The sealing film includes a first barrier layer, a base layer covering the top surface of the first barrier layer, an inter layer locally formed on the top surface of the base layer, and a second barrier layer covering the top surface of the base layer and the top surface of the inter layer. The inter layer is formed so as to cover a step on the top surface of the base layer.

Abstract: An integrated circuit structure includes a work piece selected from the group consisting of a semiconductor chip and a package substrate. The work piece includes a plurality of under bump metallurgies (UBMs) distributed on a major surface of the work piece; and a plurality of metal bumps, with each of the plurality of metal bumps directly over, and electrically connected to, one of the plurality of UBMs. The plurality of UBMs and the plurality of metal bumps are allocated with an overlay offset, with at least some of the plurality of UBMs being misaligned with the respective overlying ones of the plurality of metal bumps.

Abstract: The present invention is to provide a semiconductor device in which the step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed. A semiconductor device of the present invention includes an antenna, a storage element, and a transistor, wherein a conductive layer serving as an antenna is provided in the same layer as a conductive layer of the transistor or the storage element. This characteristic makes it possible to omit an independent step of forming the conductive layer serving as an antenna and to conduct the step of forming the conductive layer serving as an antenna at the same time as the step of forming a conductive layer of another element. Therefore, the manufacturing step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed.

Abstract: A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. A first electrode is coupled to the first doped layer. A second electrode is coupled to the second doped layer facing the same direction as the first electrode. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. A third electrode is coupled to the third doped layer facing the same direction as the first electrode. A fourth electrode is coupled to the fourth doped layer facing the same direction as the first electrode. An adhesive layer is between the first epitaxial structure and the second epitaxial structure.

Abstract: An organic light-emitting display device includes a first substrate; a display unit on the first substrate; an encapsulation layer covering the display unit; a second substrate on the first substrate, wherein the display unit is interposed therebetween; a sealant between the encapsulation layer and the second substrate and at the outside of the display unit, wherein the sealant bonds the encapsulation layer and the second substrate to seal them; and a getter on the encapsulation layer in a region between the sealant and the display unit.

Abstract: In a wafer bonding process, one or both of two wafer substrates are scored prior to bonding. By creating slots in the substrate, the wafer's characteristics during bonding are similar to that of a thinner wafer, thereby reducing potential warpage due to differences in CTE characteristics associated with each of the wafers. Preferably, the slots are created consistent with the singulation/dicing pattern, so that the slots will not be present in the singulated packages, thereby retaining the structural characteristics of the full-thickness substrates.

Abstract: A submount for a light emitting device package includes a substrate with a first bond pad and a second bond pad on a first surface. The first bond pad includes a die attach region offset toward a first end of the substrate and configured to receive a light emitting diode. The second bond pad includes a bonding region between the first bond pad and the second end of the substrate and a second bond pad extension that extends from the bonding region along a side of the substrate toward a corner of the substrate at the first end of the substrate. First and second solder pads are on the second surface of the substrate. The first solder pad is adjacent the first end of the substrate and contacts the second bond pad. The second solder pad is adjacent the second end of the substrate and contacts the first bond pad.

Abstract: A wafer level light-emitting device package may include a polymer layer that bonds a light-emitting structure to a package substrate, and the polymer layer and the package substrate may include a plurality of via holes. Also, a method of manufacturing the wafer level light-emitting device package may include forming the polymer layer on the light-emitting structure, bonding the package substrate onto the polymer layer by applying heat and pressure, and forming a plurality of via holes in the polymer layer and the package substrate.

Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

Abstract: A liquid crystal display device includes a first substrate and a second substrate which are disposed to face each other with liquid crystal interposed therebetween and a sealing material which is disposed between the first substrate and the second substrate to seal the liquid crystal, wherein a side surface of the liquid crystal display device has a cut surface, and a first resin layer which is formed along the sealing material and has a height less than a gap between the first substrate and the second substrate in a display region and the sealing material are exposed at the cut surface.

Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

Abstract: With a non-linear element (e.g., a diode) with small reverse saturation current, a power diode or rectifier is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode and having a concentration of hydrogen of 5×1019 atoms/cm3 or less, a second electrode provided on and in contact with the oxide semiconductor film, a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode, and third electrodes provided in contact with the gate insulating film and facing each other with the first electrode, the oxide semiconductor film, and the second electrode interposed therebetween or a third electrode provided in contact with the gate insulating film and surrounding the second electrode. The third electrodes are connected to the first electrode or the second electrode. With the non-linear element, a power diode or a rectifier is formed.