Abstract: Standardized photon building blocks are packaged in molded interconnect structures to form a variety of LED array products. No electrical conductors pass between the top and bottom surfaces of the substrate upon which LED dies are mounted. Microdots of highly reflective material are jetted onto the top surface. Landing pads on the top surface of the substrate are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self-align within the interconnect structure. Conductors in the interconnect structure are electrically coupled to the LED dies in the photon building blocks through the contact pads and landing pads. Compression molding is used to form lenses over the LED dies and leaves a flash layer of silicone covering the landing pads. The flash layer laterally above the landing pads is removed by blasting particles at the flash layer.

Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.

Abstract: A method for manufacturing an array substrate is provided. The array substrate, by providing a black matrix and a color resist layer on the array substrate and providing the color resist layer on the TFT layer, prevents bad influences on the color resist layer caused by a high temperature TFT process so as to provide a liquid crystal panel with improved displaying quality. The method includes, firstly, forming a black matrix on a substrate, and secondly, implementing a TFT manufacture process on the black matrix, and then forming a color resist layer after the TFT manufacture process. Accordingly, forming both the black matrix and the color resist layer on the array substrate can be achieved, where the color resist layer is formed after the TFT manufacture process to prevent bad phenomenon caused by the high temperature of the TFT process.

Abstract: A light source includes LED dies that are flip-chip mounted on a flexible plastic substrate. The LED dies are attached to the substrate using an asymmetric conductor material with deformable conducting particles sandwiched between surface mount contacts on the LED dies and traces on the substrate. A diffusively reflective material containing light scattering particles is used instead of expensive reflective cups to reflect light upwards that is emitted sideways from the LED dies. The diffusively reflective material is dispensed over the top surface of the substrate and contacts the side surfaces of the dies. The light scattering particles are spheres of titanium dioxide suspended in silicone. The light source is manufactured in a reel-to-reel process in which the asymmetric conductor material and the diffusively reflective material are cured simultaneously. A silicone layer of molded lenses including phosphor particles is also added over the mounted LED dies in the reel-to-reel process.

Abstract: Standardized photon building blocks are packaged in molded interconnect structures to form a variety of LED array products. No electrical conductors pass between the top and bottom surfaces of the substrate upon which LED dies are mounted. Microdots of highly reflective material are jetted onto the top surface. Landing pads on the top surface of the substrate are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self-align within the interconnect structure. Conductors in the interconnect structure are electrically coupled to the LED dies in the photon building blocks through the contact pads and landing pads. Compression molding is used to form lenses over the LED dies and leaves a flash layer of silicone covering the landing pads. The flash layer laterally above the landing pads is removed by blasting particles at the flash layer.

Abstract: A flip-chip light emitting diode chip includes a first semiconductor structure, which includes a P-type semiconductor layer, a N-type semiconductor layer, openings, a reflective layer, a barrier layer, a passivation layer, and an electrical contact layer. The openings penetrate the P-type semiconductor layer and a part of the N-type semiconductor layer so as to partially expose the N-type semiconductor layer. The reflective layer is disposed on the P-type semiconductor layer. The barrier layer is disposed on the reflective layer, and the area of the barrier layer is smaller than that of the reflective layer therefore the reflective layer is exposed from the barrier layer. The passivation layer is disposed on the barrier layer and partially fills in the openings. The electrical contact layer disposed on the passivation layer partially penetrates through the passivation layer to contact the exposed part of the N-type semiconductor layer.

Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.

Abstract: The present invention provides an array substrate and a manufacture method thereof. The array substrate, by locating both a black matrix and a color resist layer on the array substrate, and locating the color resist layer on the TFT layer prevents the bad influence to the color resist layer from the high temperature TFT process, and accordingly to make the liquid crystal panel with higher display quality. The manufacture method of the array substrate, first forms a black matrix on the substrate, and second implements TFT manufacture process on the black matrix, and then forms a color resist layer after the TFT manufacture.

Abstract: An embodiment of the disclosed technology provides a pixel structure, comprising a TFT, a reflective region and a transmissive region, wherein the reflective region comprises a reflective region insulation layer, a reflection layer on the reflective region insulation layer and a reflective region pixel electrode on the reflection layer, and the transmissive region comprises a transmissive region pixel electrode, wherein the reflective region pixel electrode and the transmissive region pixel electrode form an integral structure, and the integral structure of the pixel electrodes is connected with the drain electrode of the TFT, wherein the organic layer in the reflective region is formed on an array substrate prior to a gate electrode of the TFT, and the reflection layer in the reflective region and the gate electrode of the TFT are formed in a same patterning process by using a same metal layer.

Abstract: A method of manufacturing a photoelectric conversion device includes forming a wiring structure above a semiconductor substrate including a photoelectric converter, forming, by a plasma CVD method, a first insulating film which contains hydrogen, above an uppermost wiring layer in the wiring structure, performing, after formation of the first insulating film, first annealing in a hydrogen containing atmosphere on a structure including the semiconductor substrate, the wiring structure, and the first insulating film, forming a second insulating film above the first insulating film after the first annealing, and performing, after formation of the second insulating film, second annealing in the hydrogen containing atmosphere on a structure including the semiconductor substrate, the wiring structure, the first insulating film, and the second insulating film.

Abstract: The present invention provides a TFT backplate structure and a manufacture method thereof. The TFT backplate structure comprises a switch TFT (T1) and a drive TFT (T2). The switch TFT (T1) is constructed by a first source/a first drain (61), a first gate (21), and a first etching stopper layer (51), a first oxide semiconductor layer (41), a first gate isolation layer (31) sandwiched in between. The drive TFT (T2) is constructed by a second source/a second drain (62), a second gate (22), and a second oxide semiconductor layer (42), a first etching stopper layer (51), a second gate isolation layer (32) sandwiched in between. The electrical properties of the switch TFT (T1) and the drive TFT (T2) are different. The switch TFT has smaller subthreshold swing to achieve fast charge and discharge, and the drive TFT has relatively larger subthreshold swing for controlling the current and the grey scale more precisely.

Abstract: Provided are a laminate including an organic material mask and a method for preparing an organic light emitting device using the same. The laminate includes a substrate; and a mask provided on the substrate and including an organic material.

Abstract: A light-emitting device includes a substrate that is capable of transmitting light, a conductive layer that includes a first conductive portion provided on the substrate and a second conductive portion which is provided on the substrate so as to be adjacent to the first conductive portion, The second conductive portion is thinner than the first conductive portion. A light emitting layer is provided on the first conductive portion. A first electrode is provided on the second conductive portion. A second electrode is provided on the light emitting layer. In some embodiments, a backside surface of the substrate may be processed to be optically rough so as to limit internal reflections.

Abstract: A method of manufacturing a semiconductor substrate may include: forming a buffer layer on a growth substrate; forming a plurality of openings in the buffer layer, the plurality of openings penetrating through the buffer layer and being spaced apart from one another; forming a plurality of cavities on the growth substrate, the plurality of cavities being aligned to respectively correspond to the plurality of openings; growing a semiconductor layer on the buffer layer, the growing the semiconductor layer including filling the plurality of openings with the semiconductor layer; and separating the buffer layer and the semiconductor layer from the growth substrate, wherein a diameter of each of the plurality of openings at a boundary between the growth substrate and the buffer layer is smaller than a diameter of each of the plurality of cavities at the boundary.

Abstract: A display device includes: a substrate; a static electricity shielding member formed on the substrate; a scan line formed on the substrate and transferring a scan signal; a data line and a driving voltage line intersecting the scan line, being insulated therefrom and each transferring a data signal and a driving voltage; a thin film transistor formed on the static electricity shielding member; a first sacrifice electrode connected to the static electricity shielding member; and a second sacrifice electrode positioned under the first sacrifice electrode to form a sacrifice capacitor.

Abstract: A wavelength converter and a liquid crystal display having the same, the wavelength converter including a first pattern that converts a wavelength of light into red light, and a second pattern that converts a wavelength of light into green light. The first pattern and the second pattern are alternately disposed, and an optical path length La of each of the first pattern and the second pattern is given by Equation (1): La=(?a/2)×m, wherein La is an optical length of an a-th pattern, ?a is a wavelength of light converted by the a-th pattern, a is one or two, and m is a natural number.

Abstract: The light emitting element includes a first electrode and a second electrode, between which a light emitting layer, a hole transporting layer provide in contact with the light emitting layer, an electron transporting layer provided in contact with the light emitting layer, and a mixed layer provided between the electron transporting layer and the second electrode. The mixed layer includes an electron transporting substance and a substance showing an electron donating property with respect to the electron transporting substance. The light emitting layer includes an organometallic complex represented in General Formula (1) and a host. R1 and R2 each represent an electron-withdrawing substituent group. R3 and R4 each represent any of hydrogen or an alkyl group having 1 to 4 carbon atoms. L represents any of a monoanionic ligand having a beta-diketone structure, a monoanionic bidentate chelating ligand having a carboxyl group, or a monoanionic bidentate chelating ligand having a phenolic hydroxyl group.

Abstract: Standardized photon building blocks are packaged in molded interconnect structures to form a variety of LED array products. No electrical conductors pass between the top and bottom surfaces of the substrate upon which LED dies are mounted. Microdots of highly reflective material are jetted onto the top surface. Landing pads on the top surface of the substrate are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self-align within the interconnect structure. Conductors in the interconnect structure are electrically coupled to the LED dies in the photon building blocks through the contact pads and landing pads. Compression molding is used to form lenses over the LED dies and leaves a flash layer of silicone covering the landing pads. The flash layer laterally above the landing pads is removed by blasting particles at the flash layer.

Abstract: A method of manufacturing an optical semiconductor element includes: a first step in which a columnar structure of a semiconductor layer formed on a semi-insulating substrate is formed; a second step in which the substrate is exposed in a periphery of the columnar structure; a third step in which a region including exposed surfaces of the first contact layer and the substrate is pretreated; a fourth step in which a first electrode is formed on the exposed surface of the first contact layer; a fifth step in which an interlayer insulating film is formed in a region including a side surface of the columnar structure and the exposed surfaces; a sixth step in which a first electrode wiring is formed on the interlayer insulating film; and a seventh step in which a second electrode wiring is formed on the interlayer insulating film.

Abstract: The method includes the steps of: a) providing a stack including, successively, a substrate, a silicide layer formed on the substrate, and a silicon nitride layer covering at least the silicide layer, b) etching predefined regions of the silicon nitride layer in such a way as to expose at least areas of the silicide layer intended to form the electrical contacts, and c) depositing a protective layer on at least the areas of the silicide layer exposed in step b), the method not including a step of exposing the stack to moisture between step b) and step c), in particular moisture from the ambient air.

Abstract: A display and method of manufacture are described. The display may include a substrate including an array of pixels with each pixel including multiple subpixels, and each subpixel within a pixel is designed for a different color emission spectrum. An array of micro LED device pairs are mounted within each subpixel to provide redundancy. An array of wavelength conversion layers comprising phosphor particles are formed over the array of micro LED device pairs for tunable color emission spectrum.

Abstract: Some features pertain to a package on package (PoP) device that includes a first package, a first solder interconnect coupled to the first integrated circuit package, and a second package coupled to the first package through the first solder interconnect. The second package includes a first die, a package interconnect comprising a first pad, where the first solder interconnect is coupled to the first pad of the package interconnect. The second package also includes a redistribution portion coupled to the first die and the package interconnect, an encapsulation layer at least partially encapsulating the first die and the package interconnect. The first pad may include a surface that has low roughness. The encapsulation layer may encapsulate the package interconnect such that the encapsulation layer encapsulates at least a portion of the first solder interconnect.

Abstract: The current distribution across the p-layer (130) of a semiconductor device is modified by purposely inhibiting current flow through the p-layer (130) in regions (310) adjacent to the guardsheet (150), without reducing the optical reflectivity of any part of the device. This current flow may be inhibited by increasing the resistance of the p-layer that is coupled to the p-contact (140) along the edges and in the corners of contact area. In an example embodiment, the high-resistance region (130) is produced by a shallow dose of hydrogen-ion (H+) implant after the p-contact (140) is created. Similarly, a resistive coating may be applied in select regions between the p-contact and the p-layer.

Abstract: A method of fabricating a photovoltaic device includes forming an absorber layer comprising an absorber material above a substrate, forming a buffer layer over the absorber layer, forming a front transparent layer over the buffer layer, and exposing the photovoltaic device to heat or radiation at a temperature from about 80° C. to about 500° C. for a period of time, subsequent to the step of forming a buffer layer over the absorber layer.

Abstract: An array substrate comprises a substrate, a passivation layer on a surface of the substrate, a first organic film on a surface of the passivation layer and provided with a groove, a common electrode disposed on a surface of the first organic film outside the groove, and a pixel electrode disposed in the groove. A vertical projection of the common electrode on the surface of the passivation layer does not overlap with a vertical projection of the pixel electrode on the surface of the passivation layer.

Abstract: The present invention relates to a microresonator, in particular a full polymer microresonator, a method for producing the microresonator, and the use of the microresonator as a microlaser and/or molecular sensor.

Abstract: A circuit for balancing a voltage across a semiconductor element series-connected with other semiconductor elements of the same type may include a comparator configured to compare data representative of a voltage across the semiconductor element with a reference voltage, and a resistive element of adjustable value and configured to be controlled by the comparator.

Abstract: A method for producing a radiation arrangement includes providing a first substrate, arranging a first radiation source or generating first electromagnetic radiation thereon, arranging a first deflection element on the first substrate in a beam path of the first electromagnetic radiation such that the first electromagnetic radiation is deflected in a direction away from the first substrate, providing a second substrate, forming a first coupling-out region in the second substrate at a predefined position, determining an actual position of the first coupling-out region, detecting the deflected first electromagnetic radiation as a result of which a beam path of the deflected first electromagnetic radiation can be determined, aligning the first radiation source and the first deflection element on the first substrate depending on the determined actual position of the first coupling-out region.

Abstract: A surface emitting laser includes: a substrate; and a laminated body disposed over the substrate, wherein the laminated body includes a first mirror layer disposed over the substrate, an active layer disposed over the first mirror layer, and a second mirror layer disposed over the active layer, and surface roughness Ra of an uppermost layer of the first mirror layer is greater than or equal to 0.45 nm and less than or equal to 1.0 nm.

Abstract: A light source includes LED dies that are flip-chip mounted on a flexible plastic substrate. The LED dies are attached to the substrate using an asymmetric conductor material with deformable conducting particles sandwiched between surface mount contacts on the LED dies and traces on the substrate. A diffusively reflective material containing light scattering particles is used instead of expensive reflective cups to reflect light upwards that is emitted sideways from the LED dies. The diffusively reflective material is dispensed over the top surface of the substrate and contacts the side surfaces of the dies. The light scattering particles are spheres of titanium dioxide suspended in silicone. The light source is manufactured in a reel-to-reel process in which the asymmetric conductor material and the diffusively reflective material are cured simultaneously. A silicone layer of molded lenses including phosphor particles is also added over the mounted LED dies in the reel-to-reel process.

Abstract: A light-emitting device includes a package and at least one light-emitting element. The package includes a concave portion which has a bottom surface. The bottom surface includes sides, package distances between opposite sides among the sides, a longest package distance among the package distances, a lower side among the sides, and an upper side among the sides opposite to the lower side. The at least one light-emitting element is arranged on the bottom surface of the concave portion and has a polygonal shape viewed along a front direction. The polygonal shape has light-emitting element distances between vertexes of the polygonal shape and has a longest light-emitting element distance among the light-emitting element distances. The at least one light-emitting element is arranged such that a light-emitting element lateral line along the longest light-emitting element distance is substantially parallel to a package lateral line along the longest package distance.

Abstract: The invention provides a display substrate, a manufacturing method thereof and a flexible display device. The display substrate in the present invention includes a base substrate and a vulnerable member arranged on the base substrate, as well as a stress absorption layer arranged between the base substrate and the vulnerable member, wherein the projection of the vulnerable member on the base substrate is within the projection region of the stress absorption layer on the base substrate; the stress absorption layer is not arranged on part of the base substrate. Since the display substrate and the flexible display device provided by the present invention are provided with the stress absorption layer, stress generated during bending may be dispersed through the stress absorption layer to protect the vulnerable member from being damaged, so as to improve the reliability of the display substrate and the flexible display device.

Abstract: The present invention discloses a novel composite substrate which solves the problem associated with the quality of substrate surface. The composite substrate has at least two layers comprising the first layer composed of GaxAlyIn1-x-yN (0?x?1, 0?x+y?1) and the second layer composed of metal oxide wherein the second layer can be removed with in-situ etching at elevated temperature. The metal oxide layer is designed to act as a protective layer of the first layer until the fabrication of devices. The metal oxide layer is designed so that it can be removed in a fabrication reactor of the devices through gas-phase etching by reactive gas such as ammonia.

Abstract: A vapor deposition apparatus for depositing a thin film on a substrate, by which a deposition process is efficiently performed and deposition film characteristics are easily improved, and a vapor deposition apparatus including: a stage onto which a substrate is disposed; and a supply unit disposed to face the substrate and having a main body member and a nozzle member disposed on one surface of the main body member facing the substrate, to sequentially supply a plurality of gases towards the substrate, and a method of manufacturing an organic light-emitting display apparatus using the same.

Abstract: Devices and techniques are provided in which a transparent substrate is scored to provide a non-planar surface on one side of the substrate. An OLED is then disposed on the other side of the scored substrate and optically coupled to the substrate. The scored surface provides improvements to outcoupling of light generated by the OLED, with little or no additional thickness relative to the OLED alone.

Abstract: A method of providing a via hole and routing structure includes: providing a substrate wafer having recesses and blind holes provided in the surface of the wafer; providing an insulating layer in the recesses and holes; metallizing the holes and recesses; and removing the oxide layer in the bottom of the holes to provide contact between the back side and the front side of the wafer. A semiconductor device, including a substrate having at least one metallized via extending through the substrate and at least one metallized recess forming a routing together with the via. There is an oxide layer on the front side field and on the back side field. The metal in the recess and the via is flush with the oxide on the field on at least the front side, whereby a flat front side is provided. The thickness of the semiconductor device is <300 ?m.

Abstract: A method of component assembly on a substrate, and an assembly of a bound component on a substrate. The method comprises the steps of forming a free-standing component having an optical characteristic; providing a pattern of a first binding species on the substrate or the free standing component; and forming a bound component on the substrate through a binding interaction via the first binding species; wherein the bound component exhibits substantially the same optical characteristic compared to the free-standing component.

Abstract: An organic light emitting diode includes a hole injection layer, a hole transport layer, an optical compensation layer, an emission layer, an electron transport layer and an electron injection layer. The optical compensation layer is disposed on the hole transport layer and includes a phosphorescent host material. Thus, an electron barrier on an interface between the optical compensation layer and an emission layer may be reduced. Thus, the luminance efficiency in a low gray scale area may be decreased, and the stain and roll-off phenomenon in the low gray scale area may be improved.

Abstract: A semiconductor light emitting element includes a substrate and a stacked body. The stacked body is aligned with the substrate. The stacked body includes first and second semiconductor layers, a light emitting layer, and first and second electrodes. The first semiconductor layer has a first face including first and second portions. The first portion is provided with a plurality of convex portions. The second portion is aligned with the first portion. The second semiconductor layer is provided facing the second portion. The light emitting layer is provided between the second portion and the second semiconductor layer. The second semiconductor layer is disposed between the second electrode and the light emitting layer. An interval of each of the convex portions is no less than 0.5 times and no more than 4 times a wavelength of a light emitted from the light emitting layer.

Abstract: The present disclosure discloses a mask plate and processes for manufacturing an ultraviolet mask plate and an array substrate. The present disclosure relates to the field of display technology and can reduce costs for manufacturing ultraviolent mask plates. The mask plate comprises a transparent area, a semi-transparent area, and a non-transparent area, wherein the transparent area and the non-transparent area correspond to a frame glue area and a layer pattern area of a liquid crystal display panel, respectively, and other regions of the mask plate constitute said semi-transparent area. The present disclosure can be used in the manufacture of display devices of liquid crystal display televisions, liquid crystal displays, mobile phones, tablet computers, etc.

Abstract: A color temperature adjusting method of solid state light emitting device, including steps: providing a main light source which emits main light of a first color temperature; providing an adjusting light source, wherein the adjusting light source comprises a red light source, a green light source and a blue light source; and adjusting currents applied to the adjusting light sources to obtain an adjusting light, wherein the adjusting light mixes with the main light of the main light source to obtain an outgoing light of a second color temperature. The second color temperature is different from the first color temperature. The outgoing light has a chromaticity coordinate at a Plank's curve on a CIE 1931 chromaticity coordinates chart.

Abstract: Light emitting devices include a Light Emitting Diode (LED) chip having an anode contact and a cathode contact on a face thereof. A solder mask extends from the gap between the contacts onto one or both of the contacts. The LED chip may be mounted on a printed circuit board without an intervening submount. Related fabrication methods are also described.

Abstract: A display device includes: a substrate; a plurality of light-emission elements arranged, on the substrate, in a first direction and a second direction intersecting each other, each of the light-emission elements having a first electrode layer, an organic layer including a luminous layer, and a second electrode layer which are laminated in that order; and a separation section disposed, on the substrate, between the light-emission elements adjacent to each other in the first direction, the separation section having two or more pairs of steps. The first electrode layers in the light-emission elements are separated from each other, and the organic layers as well as the second electrode layers in the light-emission elements adjacent to each other in the first direction are separated from each other by the steps included in the separation section.

Abstract: Standardized photon building blocks are packaged in molded interconnect structures to form a variety of LED array products. No electrical conductors pass between the top and bottom surfaces of the substrate upon which LED dies are mounted. Microdots of highly reflective material are jetted onto the top surface. Landing pads on the top surface of the substrate are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self-align within the interconnect structure. Conductors in the interconnect structure are electrically coupled to the LED dies in the photon building blocks through the contact pads and landing pads. Compression molding is used to form lenses over the LED dies and leaves a flash layer of silicone covering the landing pads. The flash layer laterally above the landing pads is removed by blasting particles at the flash layer.

Abstract: A method is provided for fabricating stripe structures. The method includes providing a substrate; and forming a to-be-etched layer on the substrate. The method also includes forming a hard mask pattern having a first stripe on the to-be-etched layer; and forming a photoresist pattern having a stripe opening on the to-be-etched layer and the hard mask pattern having the first stripe. Further, the method includes forming a polymer layer on a top surface and side surfaces of the photoresist pattern to reduce a width of the stripe opening; forming hard mask patterns having a second stripe by etching the hard mask pattern having the first stripe using the photoresist pattern having the polymer layer as an etching mask; and forming the stripe structures by etching the to-be-etching layer using the hard mask pattern having the second stripe as an etching mask until the substrate is exposed.

Abstract: A method of manufacturing a light-emitting device includes forming a wave length conversion portion on a light-emitting element. The light emitting device includes a light-emitting element which emits light of a predetermined wavelength and a wavelength conversion portion which includes a fluorescent substance which is excited by the light emitted from the light-emitting element so as to emit fluorescence of a wavelength different from the predetermined wavelength, which wavelength conversion portion is formed by including the fluorescent substance, a layered silicate mineral, and an organometallic compound.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.

Abstract: Embodiments relate generally to systems and methods for determining end of service life for a respirator cartridge by comparing the gas levels sensed at two or more sample points within the cartridge. Sample streams may run from the sample points to a gas sensor, wherein a valve may control the flow between the sample streams and the gas sensor.

Abstract: A method of fabricating an optoelectronic device, comprising: providing a first substrate; forming an epitaxial stack on the first substrate wherein the epitaxial stack comprising a first conductive-type semiconductor layer, an active layer and a second conductive-type semiconductor layer; etching an upper surface of the second conductive-type semiconductor layer and forming a first texture profile on the upper surface of the second conductive-type semiconductor layer; forming a passivation layer on the upper surface of the second conductive-type semiconductor layer; and etching an upper surface of the passivation layer forming a second texture profile on the upper surface of the passivation layer wherein the first texture profile is different from the second texture profile.

Abstract: A light-emitting diode chip is specified, comprising an n-conducting region (1), a p-conducting region (2), an active region (3) between the n-conducting region (1) and the p-conducting region (2), a mirror layer (4) at that side of the p-conducting region (2) which is remote from the active region (3), and an insulation layer (5) formed with an electrically insulating material, wherein the mirror layer (4) is designed for reflecting electromagnetic radiation generated in the active region (3), and the mirror layer (4) has a perforation (41), wherein a side area (4a) of the mirror layer (4) is completely covered by the insulation layer (5) in the region of the perforation (41).