Abstract: Embodiments of the present invention provide a method of forming contact structure for transistor. The method includes providing a semiconductor substrate having a first and a second gate structure of a first and a second transistor formed on top thereof, the first and second gate structures being embedded in a first inter-layer-dielectric (ILD) layer; epitaxially forming a first semiconductor region between the first and second gate structures inside the first ILD layer; epitaxially forming a second semiconductor region on top of the first semiconductor region, the second semiconductor region being inside a second ILD layer on top of the first ILD layer and having a width wider than a width of the first semiconductor region; and forming a silicide in a top portion of the second semiconductor region.

Abstract: A method of manufacturing a light-emitting device includes forming a first optical element on a first carrier, wherein the first optical element comprises an opening; forming a light-emitting element in the opening; forming a second optical element on the light-emitting element; forming a second carrier on the first optical element and the second optical element; removing the first carrier after forming the second carrier on the first optical element and the second optical element; and forming two separated conductive structures under the first optical element.

Abstract: A semiconductor device (100A) according to the present invention includes an oxide semiconductor layer (31a), first and second source electrodes (52a1 and 52a2), and first and second drain electrodes (53a1 and 53a2). The second source electrode (52a2) is formed to be in contact with a top surface of the first source electrode and inner to the first source electrode (52a1). The second drain electrode (53a2) is formed to be in contact with a top surface of the first drain electrode (53a1) and inner to the first drain electrode (53a1). The oxide semiconductor layer (31a) is formed to be in contact with the top surface of the first source electrode (52a1) and the top surface of the first drain electrode (53a1).

Abstract: Various embodiments may relate to a device for the surface treatment of a substrate, including a processing head, which is mounted rotatably about an axis of rotation, and which comprises multiple gas outlets, which are at least partially implemented on a radial outer edge of the processing head.

Abstract: The optical module includes an optical component, a substrate, and a laser, an electro-absorption modulator, and a semiconductor optical amplifier that grow on the substrate, where: the electro-absorption modulator is located between the laser and the semiconductor optical amplifier; the laser is configured to output an optical signal after power-on; the electro-absorption modulator is configured to perform signal modulation on the optical signal output by the laser; the semiconductor optical amplifier is configured to amplify the optical signal modulated by the electro-absorption modulator; the optical component is configured to perform deflection and convergence for the optical signal amplified by the semiconductor optical amplifier and output the optical signal.

Abstract: A method of fabricating an organic electroluminescent device includes forming an organic electroluminescent layer emitting a light and a plurality of nano-sized embossing layers stacked to improve light extraction efficiency of the emitted light.

Abstract: A mask for forming a layer, a method of forming a layer, and a manufacturing method of an organic light-emitting diode (OLED) display are disclosed. In one aspect, the mask includes at least one light absorption portion and at least one reflection portion that are formed in a unit region, the unit region corresponding to a region where a continuous layer is formed, wherein the light absorption portion and the reflection portion in the unit region are formed at different areas from each other.

Abstract: An optoelectronic device comprises a semiconductor stack, a first metal layer formed above the semiconductor stack, wherein the first metal layer comprises a first major plane and a first boundary with a gradually reduced thickness, and a second metal layer formed above the first metal layer, wherein the second metal layer comprise a second major plane paralleling to the first major plane and a second boundary with a gradually reduced thickness, and the second boundary of the second metal layer exceeds the first boundary of the first metal layer.

Abstract: A method for manufacturing a light-emitting diode is provided. First, a substrate having a front or top surface and a rear or bottom surface is provided. An uneven pattern is formed on the rear or bottom surface. A light-emitting semiconductor layer is formed by stacking a first semiconductor layer, an active layer, and a second semiconductor layer on the front or top surface of the substrate having the uneven pattern. The light-emitting semiconductor layer and the substrate are separated into a plurality of light-emitting cells.

Abstract: Disclosed is an organic light emitting display (OLED) device that may include first and second pixels on a substrate, each including a TFT region and a display region, the display region of each of the first and second pixels including a first electrode, an emission layer and a second electrode; a color filter layer in the display region of the second pixel; and a reflection preventing layer in the first and second pixels, substantially excluding the display region of the second pixel.

Abstract: An organic light emitting diode display device which may improve luminous emitting efficiency by forming a scattering layer with a material including fluorine and a method of fabricating the same are discussed. The organic light emitting diode display device can include a thin film transistor formed on a substrate; an overcoat layer formed on the substrate such that the thin film transistor is covered; a scattering layer formed on the overcoat layer and formed with a material including fluorine; and an organic light emitting cell formed on the scattering layer and including a first electrode, an organic emission layer and a second electrode sequentially laminated, wherein light emitted from the organic light emitting cell passes through the scattering layer and then is emitted through the substrate.

Abstract: A quantum cascade laser and method of making are disclosed. The quantum cascade laser includes a plurality stages configured in a cascade structure, each stage having a quantum well emission layer and an injection layer, each stage having an upper laser level and a lower laser level. A scattering barrier is located in the quantum well emission layer, the scattering barrier being positioned such that interface roughness (IFR) scattering at the lower laser level is greater than IFR scattering at the upper laser level. The scattering barrier may be located to maximize IFR scattering for the lower laser level and/or minimize IFR scattering for the upper laser level.

Abstract: A semiconductor light emitting device includes a semiconductor lamination including a p-type semiconductor layer, an active semiconductor layer, and an n-type semiconductor layer; opposing electrode structure including a first electrode structure formed above the p-type semiconductor layer, and a second electrode structure formed above the n-type semiconductor layer; and brightness grade producing structure including a surface layer of at least one of the p-type semiconductor layer and the n-type semiconductor layer and producing brightness grade gradually changing from one edge to opposite edge of light output plane.

Abstract: A method includes producing a first layer of optical liquid, shaping contactlessly the first layer of the optical liquid according to a desired form, and curing the shaped first layer of the optical liquid with electromagnetic radiation to generate a first optically refracting surface.

Abstract: Solid state lighting (SSL) devices and methods of manufacturing SSL devices are disclosed herein. In one embodiment, an SSL device comprises a support having a surface and a solid state emitter (SSE) at the surface of the support. The SSE can emit a first light propagating along a plurality of first vectors. The SSL device can further include a converter material over at least a portion of the SSE. The converter material can emit a second light propagating along a plurality of second vectors. Additionally, the SSL device can include a lens over the SSE and the converter material. The lens can include a plurality of diffusion features that change the direction of the first light and the second light such that the first and second lights blend together as they exit the lens. The SSL device can emit a substantially uniform color of light.

Abstract: A photonic device generates light from a full spectrum of lights including white light. The device includes two or more LEDs grown on a substrate, each generating light of a different wavelength and separately controlled. A light-emitting structure is formed on the substrate and apportioned into the two or more LEDs by etching to separate the light-emitting structure into different portions. At least one of the LEDs is coated with a phosphor material so that different wavelengths of light are generated by the LEDs while the same wavelength of light is emitted from the light-emitting structure.

Abstract: According to one embodiment, a display device includes a first insulating layer, a second insulating layer, a pixel electrode, a light emitting layer, an opposite electrode and a pixel circuit. The second insulating layer is provided on the first insulating layer. The pixel electrode is provided on the second insulating layer and light-transmissive. The light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the light emitting layer. The circuit is provided between the first insulating layer and the second insulating layer, includes an interconnect supplied with a drive current, and is configured to supply the drive current to the pixel electrode. The circuit is connected to the pixel electrode. The interconnect has a first region overlaying the pixel electrode when projected onto a plane parallel to the first insulating layer. The interconnect has an opening in the first region.

Abstract: According to at least one embodiment, an organic light-emitting component includes a substrate, a first electrode arranged on the substrate, and a second electrode. An organic light-generating layer stack is arranged between the first and second electrodes and includes a first organic OLED functional material. A first organic coupling-out layer is in optical contact with the organic light-generating layer stack and includes an organic material containing a second organic OLED functional material. One of the first and second electrodes is translucent, and the first organic coupling-out layer is arranged on that side of the electrode that faces away from the organic light-generating layer stack.

Abstract: Each pixel of a thin film transistor substrate includes a base substrate including a pixel display area and a pixel non-display area surrounding the pixel display area, a gate electrode on the base substrate in the pixel non-display area, a first insulating layer which is on the base substrate in the pixel non-display area and covers the gate electrode, a semiconductor layer on the first insulating layer, of which a predetermined portion thereof overlaps the gate electrode, a source electrode and a drain electrode which are spaced apart from each other and on the semiconductor layer, a second insulating layer which is on the first insulating layer and the base substrate and covers the source electrode and the drain electrode, and a pixel electrode on the second insulating layer in the pixel display area.

Abstract: A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate.

Abstract: A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.

Abstract: A process for fabricating an LED lighting apparatus comprising a color stable Mn4+ doped phosphor of formula I includes forming on a surface of an LED chip a polymer composite layer comprising a first and a second population of particles of the phosphor of formula I having a graded composition varying in manganese concentration across a thickness thereof; Ax(M,Mn)Fy??(I) wherein A is Li, Na, K, Rb, Cs, NR4 or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; R is H, lower alkyl, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7. The first population of particles has a lower manganese concentration than the second population of particles, and the manganese concentration in the polymer composite layer ranges from a minimum value in a region of the polymer composite layer proximate to the LED chip to a maximum value in a region opposite to the LED chip.

Abstract: Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

Abstract: The present invention provides a light emitting diode which comprises a substrate, a light emitting layer including an N-type semiconductor layer and a P-type semiconductor layer formed on the substrate, and a wavelength conversion layer formed on the light emitting layer or on the back of the substrate. The wavelength conversion layer is formed of a Group III nitride semiconductor doped with rare earth elements. The rare earth elements include at least one of Tm, Er and Eu. According to a light emitting diode of the present invention, a desired color can be implemented in various ways by converting the wavelength of primary light emitted from a light emitting chip. Thus, the reliability and quality of products can be improved due to the uniform emission of light with a desired color. Further, since the existing semiconductor process can be utilized in the present invention, its fabrication process can be simplified, process cost and time can be reduced, and the compact products can be obtained.

Abstract: Disclosed herein is a method of disposing phosphor layers, which can prevent damage to phosphors and also effectively dispose phosphor layers at desired locations of Light-Emitting Diodes (LEDs) when the phosphor layers are detached and disposed at the top surfaces of the LEDs. According to an embodiment, phosphor layers fabricated by filling phosphor layer pattern holes within an area of the vertical frame with a phosphor solution are detached from the phosphor layer pattern holes by applying force downwardly or upwardly in a vertical manner.

Abstract: Disclosed is a light emitting diode (LED) comprising a light emitting stacked structure and an electrode structure formed to have a pattern on the light emitting stacked structure. The electrode structure of the LED includes a cluster of reflectors disposed along the pattern on the light emitting stacked structure, and a pad material layer formed to entirely cover the reflectors.

Abstract: Disclosed is a light emitting device including a substrate, a first conductive semiconductor layer disposed on the substrate, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer, wherein the first conductive semiconductor layer comprises a first layer provided at the upper surface thereof with a notch, a second layer disposed on the first layer and a third layer disposed on the second layer, wherein the first conductive semiconductor layer further comprises a blocking layer between the first layer and the second layer and the blocking layer is disposed along the notch. The light emitting device can reduce leakage current by dislocation and improve resistance to static electricity.

Abstract: A device includes a substrate (10) and a III-nitride structure (15) grown on the substrate, the III-nitride structure comprising a light emitting layer (16) disposed between an n-type region (14) and a p-type region (18). The substrate is a RAO3 (MO)n where R is one of a trivalent cation: Sc, In, Y and a lanthanide; A is one of a trivalent cation: Fe (III), Ga and Al; M is one for a divalent cation: Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer ?1. The substrate has an inplane lattice constant asubstrate. At lease one III-nitride layer in the III-nitride structure has a bulk lattice constant alayer such that [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%.

Abstract: The purpose is to provide a phosphor particle dispersion liquid in which the phosphor particles do not settle out when the phosphor dispersion liquid is left to stand. The phosphor dispersion liquid contains phosphor particles, clay mineral particles, inorganic particles, and a solvent. The phosphor dispersion liquid has viscosity ?1 of 10 to 500 mPa·s at a shear rate of 1000 (1/s) at 25° C., and viscosity ?2 of 1.0×103 to 1.0×105 mPa·s at a shear rate of 1 (1/s) at 25° C.

Abstract: The fabrication method for an organic EL device according to the invention includes: forming a third insulating layer on a first insulating layer; removing the third insulating layer in a first pixel region by etching the third insulating layer; forming a second insulating layer that has different thicknesses in a first pixel and a second pixel and has a flat first surface by forming a precursor insulating layer to continuously cover a first reflection film and a second reflection film and then planarizing an upper surface of the precursor insulating layer; and forming a first pixel electrode and a second pixel electrode on the first surface of the second insulating layer. The first insulating layer is slower in the rate at which the layer is removed by etching than the third insulating layer.

Abstract: An optoelectronic module includes a substrate, an LED and a laser LED formed on the substrate, simultaneously. A method for manufacturing an optoelectronic module includes following steps: providing a sapphire substrate, and forming two adoped GaN layers, an N-type GaN layer, an active layer and a P-type GaN layer on the sapphire substrate in sequence; providing a substrate and forming a metallic adhering layer on the substrate; forming an ohmic contact layer and a reflecting layer on the P-type GaN layer in series; arranging the reflecting layer on the adhering layer; stripping the sapphire substrate and the two doped GaN layers from the N-type GaN layer to form a semiconductor structure; etching a top end of the semiconductor structure to divide the semiconductor structure into a laser LED region and an LED region; forming two N-type electrodes on the LED region and an LED region, respectively.

Abstract: Provided is a light emitting device comprising an optical member provided on a light extracting surface side of a semiconductor light emitting element via a first light transmissive layer, wherein bonding surfaces of the semiconductor light emitting element and the first light transmissive layer are roughened surfaces, bonding surfaces of the first light transmissive layer and the optical member are flat, and the first light transmissive layer and the optical member are directly bonded.

Abstract: The present invention relates to an LED module 10, a circuit board 1, and a method for coating the circuit board 1 that is used in an LED module 10. The circuit board 1 is used particularly for reflecting light emitted by at least one LED chip of the LED module 10. The at least one LED chip 6 is located on a carrier plate 5 in a cut-out 2 of the circuit board 1. To increase the light yield of the LED module 10, the circuit board 1 is sprayed with a highly reflective layer 4. The layer 4 can be an ink provided with reflective particles, for example, which is sprayed on using an ink jet printing method. The LED module can additionally have at least one colour conversion element 7, 8, 9, which is preferably positioned in or above the at least one cut-out 2 of the circuit board 1. Finally; positioning elements 12, 13 can improve the assembly of the LED module 10, particularly the alignment of the circuit board 1 and the carrier plate 5.

Abstract: An optoelectronic device includes a layer sequence having an active layer that emits electromagnetic primary radiation, and at least one converter carrier layer arranged in the beam path of the electromagnetic primary radiation. The at least one converter carrier layer includes converter particles and an inorganic-organic hybrid material and/or a silicate glass.

Abstract: According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.

Abstract: In an optical semiconductor package, a method of manufacturing the same, and an optical semiconductor device according to the present invention, a thermosetting resin such as an unsaturated polyester resin is used for a reflector 5 or resin 6 exposed around an optical semiconductor element, thereby suppressing deterioration of resin and a reduction in reflectivity.

Abstract: A semiconductor light emitting element (1) including of a substrate (110) composed of sapphire; a laminated semiconductor layer (100) composed of an n-type semiconductor layer (140), a light emitting layer (150) and a p-type semiconductor layer (160) provided on the substrate (110); a first electrode (170) formed in the p-type semiconductor layer (160); and a second electrode (180) formed in the n-type semiconductor layer (140). Further, the first electrode (170) includes a first conductive layer (171) composed of an oxide transparent conductive material laminated on the p-type semiconductor layer (160); a reflection layer (172) which contains silver laminated on the first conductive layer (171); a second conductive layer (173) composed of an oxide conductive material laminated on the reflection layer (172); and a coating layer (174) provided so as to cover the first conductive layer (171), the reflection layer (172) and the second conductive layer (173).

Abstract: According to one embodiment, an organic electroluminescent light emitting device includes a transparent substrate, an intermediate layer, a first electrode, an organic light emitting layer, and a second electrode. The intermediate layer includes a plurality of fine particles and a flattened layer. The fine particles are adhered to a major surface of the transparent substrate. The flattened layer covers the fine particles and has a refractive index different from a refractive index of the fine particles. The flattened layer is transparent. The first electrode is provided on the intermediate layer. The first electrode is transparent. The organic light emitting layer is provided on the first electrode. The second electrode is provided on the organic light emitting layer.

Abstract: A flip-chip LED includes a substrate, having a surface with a p-region metal portion and an n-region metal portion separated from each other; a p-type epitaxial layer, an active layer and an n-type epitaxial layer successively laminated on the substrate; a reflection layer between the substrate and the p-type epitaxial layer; a current blocking layer between the reflection layer and the p-type epitaxial layer and positioned to prevent the current from concentrating on the edge of the LED; an insulating protection layer cladding the LED side wall and exposing part of the side wall of the n-type epitaxial layer; a P electrode connecting the metal reflection layer and the p-region metal portion of the substrate; and an N electrode connecting the side wall of the n-type epitaxial layer and n-region metal portion of the substrate.

Abstract: A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers.

Abstract: Provided is a light emitting diode (LED) in which a side surface of a reflective metal layer has a predetermined angle, and occurrence of cracks in a conductive barrier layer formed on the reflective metal layer can be prevented. Also, an LED module using LEDs is disclosed. A reflection pattern electrically connected to a second semiconductor layer is partially exposed by patterning a first insulating layer. Accordingly, a first pad is formed through the partially opened first pad region. Also, a conductive reflection layer electrically connected to a first semiconductor layer forms a second pad region formed by patterning a second insulating layer. A second pad is formed on the second pad region.

Abstract: Methods of fabricating a device having laterally patterned first and second sub-devices, such as subpixels of an OLED, are provided. Exemplary methods may include depositing via organic vapor jet printing (OVJP) a first organic layer of the first sub-device and a first organic layer of the second sub-device. The first organic layer of the first sub-device and the first organic layer of the second sub-device are both the same type of layer, but have different thicknesses. The type of layer is selected from an ETL, an HTL, an HIL, a spacer and a capping layer.

Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.

Abstract: Provided is a light emitting diode device. The light emitting diode device includes a light emitting diode chip having a first surface on which first and second electrodes are disposed, and a second surface opposing the first surface, a wavelength conversion portion including fluorescent substances and covering the first surface and side surfaces of the light emitting diode chip, wherein the side surfaces denote surfaces placed between the first and second surfaces, and first and second electricity connection portions each including a plating layer, respectively connected to the first and second electrodes, and exposed to the outside of the wavelength conversion portion. Accordingly, the light emitting diode device, capable of enhancing luminous efficiency and realizing uniform product characteristics in terms of the emission of white light, is provided. Further, a process for easily and efficiently manufacturing the above light emitting diode device is provided.

Abstract: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.

Abstract: An organic light-emitting display apparatus includes a buffer layer that is on a substrate and includes nanoparticles including nickel (Ni), a pixel electrode on the buffer layer, an organic emission layer on the pixel electrode, and an opposite electrode on the organic emission layer. A method of manufacturing the organic light-emitting display apparatus is provided.

Abstract: Provided is a display device including: a substrate; and multiple pixels provided on the substrate, the pixels each having an organic EL element obtained by laminating a lower electrode provided on the substrate, an organic compound layer, and an upper electrode in the stated order, and the lower electrode including an electrode independently placed for each of the pixels, in which: the lower electrode is formed of a first lower electrode layer provided on the substrate and a second lower electrode layer provided on the first lower electrode layer; the organic compound layer and the upper electrode cover the first lower electrode layer and the second lower electrode layer; and charge injection property from the second lower electrode layer into the organic compound layer is larger than charge injection property from an end portion of the first lower electrode layer into the organic compound layer.

Abstract: Disclosed is a method for preventing a short circuit between metal wires in an organic light emitting diode display device. The method includes: forming an inorganic layer on a substrate; forming an opening in the inorganic layer for exposing a part of the substrate; forming a metal layer on the inorganic layer, the metal layer including two metal wires respectively positioned at two sides of the opening; forming an organic layer on the two metal wires of the metal layer; and forming an indium tin oxide layer on the organic layer. The present invention can ensure that the short circuit does not occur between the metal wires by forming the opening in the inorganic layer.

Abstract: The present teachings provide methods for forming organic layers for an organic light-emitting device (OLED) using an inkjet printing or thermal printing process. The method can further use one or more additional processes, such as vacuum thermal evaporation (VTE), to create an OLED stack. OLED stack structures are also provided wherein at least one of the charge injection or charge transport layers is formed by an inkjet printing or thermal printing method at a high deposition rate. The structure of the organic layer can be amorphous, crystalline, porous, dense, smooth, rough, or a combination thereof, depending on deposition parameters and post-treatment conditions. An OLED microcavity is also provided and can be formed by one of more of the methods.

Abstract: An organic light emitting diode display device capable of improving capacitance Cst of a storage capacitor and transmittance and a method of fabricating the same are disclosed. The organic light emitting diode display device includes a driving thin film transistor (TFT) formed on the substrate, a passivation film formed to cover the TFT driver, a color filter formed on the passivation film in a luminescent region, a planarization film formed to cover the color filter, a transparent metal layer formed on the planarization film, an insulating film formed on the transparent metal layer, a first electrode connected to the TFT driver and overlapping the transparent metal layer while interposing the insulating film therebetween, an organic light emitting layer and a second electrode which are sequentially formed on the first electrode. The transparent metal layer, the insulating film, and the first electrode constitute a storage capacitor in the luminescent region.