Abstract: A laser device includes a substrate, a lower cladding layer on the substrate, an active layer on the lower cladding layer and having a disordered portion spaced from an end face of a resonator of the laser device, an upper cladding layer located on the active layer, and a diffraction grating located in a portion of a layer lying above or below the active layer, with respect to the substrate. The disordered portion intersects a boundary between a diffraction grating section, in which the diffraction grating is located, and a bulk section, in which no diffraction grating is located.

Abstract: An optical semiconductor device is disclosed including an active region including an active layer and a diffraction grating having a ?/4 phase shift; passive waveguide regions each including a passive waveguide and a diffraction grating, disposed on the side of an emission facet and on the side of a rear facet sandwiching the active region between the passive waveguide regions, respectively; and an anti-reflection coating applied on the emission facet, wherein the passive waveguide region on the side of the emission facet has a length shorter than a length of the passive waveguide region on the side of the rear facet side.

Abstract: A light emitting device having a high degree of light extraction efficiency includes a substrate, and a light emitting structure disposed on one surface of the substrate, the substrate having an internal reformed region where the index of refraction differs from the remainder the substrate. The ratio of the depth of the reformed region (distance between the other surface of the substrate and the reformed region) to the thickness of the substrate is in a range of between 1/8 and 9/11.

Abstract: A semiconductor laser has first and second diffractive grating regions. The first diffractive grating region has segments, has a gain, and has first discrete peaks of a reflection spectrum. The second diffractive grating region has segments combined to each other, and has second discrete peaks of a reflection spectrum. Each segment has a diffractive grating and a space region. Pitches of the diffractive grating are substantially equal to each other. A wavelength interval of the second discrete peaks is different from that of the first discrete peaks. A part of a given peak of the first discrete peaks is overlapped with that of the second discrete peaks when a relationship between the given peaks of the first discrete peaks and the second discrete peaks changes.

Abstract: A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack formation step of forming a group III-V compound semiconductor layer stack including an emission layer on the substrate; and an electrode formation step of forming a semiconductor layer side electrode and a substrate side electrode. The semiconductor layer and electrodes are formed such that an emission region into which carriers flow in the emission layer is located above and within the span of the low dislocation density high conductance region. Thus, a surface-emitting laser element having uniform light emission at the emission region can be obtained with favorable yield.

Abstract: A method of producing a thermally stable grating allows the grating to be placed in environments where temperatures reach 1000° C. and where the grating is relatively stable and has very low loss from scatter. These gratings have spectral characteristics that allow them to be concatenated so as to form a sensor array. The method requires a step of lowering the characteristic intensity threshold of a waveguide by at least 25%, followed by irradiating the waveguide with femtosecond pulses of light having a sufficient intensity and for a sufficient duration to write the grating so that at least 60% of the grating remains after exposures of at least 10 hours at a temperature of at least 1000° C.

Abstract: An optical semiconductor element includes: a grating base layer including a projection-recess structure disposed over a substrate; and a grating cover layer including a group III-V semiconductor having three or more elements, wherein the grating cover layer includes a first region which is disposed over recessed portions of the grating base layer and which has a compositional ratio of a group III-V semiconductor having a first refractive index, and a second region which is disposed over projecting portions of the grating base layer and which has a compositional ratio of a group III-V semiconductor having a second refractive index that is smaller than the first refractive index, wherein the grating base layer includes a group III-V semiconductor having a third refractive index that is smaller than the first refractive index.

Abstract: The invention relates to devices having periodic refractive index modulation structures and fabrication methods for the devices using a laser means. By focusing a pulsed laser beam into a transparent material substrate, a path of laser modified volumes can be formed with modified refractive index compared with the unprocessed material. By selecting appropriate laser parameters and relative scan speed, the laser modified path defines an optical waveguide. Separation distance of the individual modified volumes define a periodic modification pattern along the waveguide path, so that the waveguide structures also exhibit grating responses, for example, as spectral filters, Bragg reflectors, grating couplers, grating sensors, or other devices.

Abstract: A surface emitting laser includes a lower multilayer mirror and an upper multilayer mirror which are provided on a substrate. A first oxidizable layer is partially oxidized to form a first current confinement layer including a first conductive region and a first insulating region. A second oxidizable layer is partially oxidized to form a second current confinement layer including a second conductive region and a second insulating region, a boundary between the first conductive region and the first insulating region being disposed inside the second current confinement layer in an in-plane direction of the substrate. The first oxidizable layer and the second oxidizable layer or layers adjacent to the respective oxidizable layers are adjusted so that when both layers are oxidized under the same oxidizing conditions, the oxidation rate of the first oxidizable layer is lower than that of the second oxidizable layer.

Abstract: A vertical cavity surface emitting laser (VCSEL) system and method of fabrication are included. The VCSEL system includes a gain region to amplify an optical signal in response to a data signal and a first mirror arranged as a partially-reflective high-contrast grating (HCG) mirror at an optical output of the VCSEL system. The VCSEL system also includes a second mirror. The first and second mirrors can be arranged as a laser cavity to resonate the optical signal. The VCSEL system further includes a doped semiconductor region to generate a current through the first mirror in response to a voltage signal to substantially alter the reflectivity of the first mirror to provide Q-switching capability of the VCSEL system.

Abstract: A high efficiency light emitting diode (LED) comprised of a substrate, a buffer layer grown on the substrate (if such a layer is needed), a first active region comprising primary emitting species (PES) that are electrically-injected, a second active region comprising secondary emitting species (SES) that are optically-pumped by the light emitted from the PES, and photonic crystals, wherein the photonic crystals act as diffraction gratings to provide high light extraction efficiency, to provide efficient excitation of the SES, and/or to modulate the far-field emission pattern.

Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser formed in various layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, a diffractive or refractive lens formed in or on an upper surface of the polymer material, a side reflector formed on an angled side reflector facet of the polymer material generally facing an exit end facet of the laser, and a lower reflector disposed on the substrate beneath the polymer material. Laser light passes out of the exit end facet and propagates through the polymer material before being reflected by the side reflector toward the lower reflector. The laser light is then re-reflected by the lower reflector towards the lens, which directs the laser light out the device in a direction that is generally normal to the upper surface of the substrate.

Abstract: A MEMS-based display device is described, wherein an array of interferometric modulators are configured to reflect light through a transparent substrate. The transparent substrate is sealed to a backplate and the backplate may contain electronic circuitry fabricated on the backplane. The electronic circuitry is placed in electrical communication with the array of interferometric modulators and is configured to control the state of the array of interferometric modulators.

Abstract: A method to manufacture an optical device with enhanced high frequency performance is disclosed. The method includes steps of: (a) forming semiconductor layers on a semiconductor substrate, (b) etching the semiconductor layers by using a mask to form a plurality of diffraction gratings, where the mask provides a plurality of periodic patterns each corresponding to respective gratings and having a specific pitch different from others, (c) forming an active layer on the etched semiconductor layers, (d) measuring a maximum optical gain of the active layer, (e) selecting one of diffraction gratings based on the measured optical gain, and (f) forming a current confinement structure aligned with the selected diffraction grating.

Abstract: A method of manufacturing a semiconductor laser having a diffraction grating includes the steps of forming a first semiconductor layer on a semiconductor substrate; forming periodic projections and recesses which constitute a diffraction grating in the first semiconductor layer; cleaning a surface of the first semiconductor layer with water; drying the surface of the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer. In drying the surface of the first semiconductor layer, after replacing water adhering to the surface of the first semiconductor layer with a water-soluble organic solvent, exposing the surface of the first semiconductor layer provided with the projections and recesses to an atmosphere containing the water-soluble organic solvent. At least one of the first semiconductor layer and the second semiconductor layer is composed of a p-type semiconductor.

Abstract: A diffraction grating having a transparent supporting substrate; and a cured resin layer which is stacked on the transparent supporting substrate and which has concavities and convexities formed on a surface thereof, wherein when a Fourier-transformed image is obtained by performing two-dimensional fast Fourier transform processing on a concavity and convexity analysis image obtained by analyzing a shape of the concavities and convexities formed on the surface of the cured resin layer by use of an atomic force microscope, the Fourier-transformed image shows a circular or annular pattern substantially centered at an origin at which an absolute value of wavenumber is 0 ?m?1, and the circular or annular pattern is present within a region where an absolute value of wavenumber is within a range of 10 ?m?1 or less.

Abstract: A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.

Abstract: An optical element includes a substrate having a passive waveguide and a laser waveguide disposed therein. The laser waveguide is in direct contact with the passive waveguide over a surface of contact so as to provide a butt coupling between the passive waveguide and the laser waveguide. A step extends between an upper edge of the passive waveguide and an upper edge of the laser waveguide. A covering is disposed on the passive waveguide so that the covering and the substrate together provide a cladding of lower refractive index around the passive waveguide and so that a hollow space is disposed between a lower edge of the covering and the upper edge of the laser waveguide.

Abstract: A light emitting device includes a number of light emitting diode dies (LEDs) mounted on a shared submount and covered with a single lens element that includes a corresponding number of lens elements. The LEDs are separated from each other by a distance that is sufficient for lens element to include separate lens elements for each LED. The separation of the LEDs and lens elements may be configured to produce a desired amount of light on a target at a predefined distance. In one embodiment, the lens elements are approximately flat type lens elements, such as Fresnel, TIR, diffractive lens, photonic crystal type lenses, prism, or reflective lens.

Abstract: A semiconductor laser device includes a first semiconductor stack portion that includes a grating layer and an active layer provided on the grating layer. The grating layer has a first region and second region; a diffraction grating provided in the first region; a semiconductor ridge structure portion provided on the first semiconductor stack portion and extending in a first direction; and a pair of first trenches provided along both side faces of the semiconductor ridge structure portion with the first region of the grating layer being located between the trenches. The first trenches penetrate through the grating layer. The first region of the grating layer has an end extending in a second direction intersecting with the first direction. The end of the first region of the grating layer reaches a trench.

Abstract: An optical duplexer intended to receive light at a first optical wavelength and to transmit back light at a second optical wavelength, including, on a substrate, successive layers forming a photoreceptor of the first optical wavelength, a selective filter letting through the first optical wavelength, and a waveguide having a surface including a grating which is transparent for the first optical wavelength and diffracting for the second optical wavelength.

Abstract: Provided are a frequency tunable terahertz transceiver and a method of manufacturing a dual wavelength laser. The frequency tunable terahertz transceiver includes: a dual wavelength laser including two distributed feedback lasers that are manufactured in one substrate and output optical signals of respectively different wavelengths; and an optical device receiving the outputted optical signals to generate a terahertz wave.

Abstract: An optoelectronic device is provided that includes a substrate having a surface and a normal direction perpendicular to the surface, a first semiconductor layer formed on the surface, and at least one hollow component formed between the first semiconductor layer and the surface. A method of fabricating an optoelectronic device is also provided that includes providing a substrate having a surface and a normal direction perpendicular to the surface, forming a first semiconductor layer on the surface, patterning the first semiconductor layer, forming a second semiconductor layer on the substrate and cover the patterned first semiconductor layer, and forming at least one hollow component formed between the first semiconductor layer and the surface. A height of the hollow component varies along with a first direction perpendicular to the normal direction and/or a width of the hollow component varies along with a second direction parallel with the normal direction.

Abstract: A method for manufacturing an electronic device comprises a step for forming a coating film (100) on a surface of a conductor portion-containing body (500), a step for forming a photosensitive film (110) on the conductor (500) on which the coating film (100) has been formed, a step for exposing the photosensitive film (110) to a pattern corresponding to a patterned recessed or protruded portion, a step for developing the exposed photosensitive film (110), and a step for baking the developed photosensitive film (110). With this method, an excessive removal of a metal film can be prevented or suppressed.

Abstract: A method for etching an insulating film includes the steps of forming an insulating film; forming a first resin layer composed of a non-silicon-containing resin on the insulating film; forming a pattern including projections and recesses in the first resin layer; forming a second resin layer composed of a silicon-containing resin to cover the projections and the recesses of the pattern in the first resin layer; etching the second resin layer by reactive ion etching with etching gas containing CF4 gas and oxygen gas until the projections of the first resin layer are exposed, a Si component of the second resin layer being oxidized in etching the second resin layer; selectively etching the first resin layer until the insulating film is exposed using as a mask the second resin layer buried in the recesses of the first resin layer to form a resin layer mask; and etching the insulating film using the resin layer mask.

Abstract: Light-emitting devices (e.g., LEDs) and methods associated with such devices are provided. In some embodiments, the device includes a distribution of light-generating portions (including active regions) that are spatially localized and separated (e.g., horizontally or vertically) from one or more patterned light extraction portions. This arrangement can allow light generated by the device to propagate and pass through regions of low absorption (e.g., light-extraction portions) rather than in regions of high absorption (e.g., light-generating portions), which can enhance light emission.

Abstract: A MEMS-based display device is described, wherein an array of interferometric modulators are configured to reflect light through a transparent substrate. The transparent substrate is sealed to a backplate and the backplate may contain electronic circuitry fabricated on the backplane. The electronic circuitry is placed in electrical communication with the array of interferometric modulators and is configured to control the state of the array of interferometric modulators.

Abstract: A method for producing a semiconductor optical device includes the steps of forming a semiconductor layer; forming a non-silicon-containing resin layer; forming a first pattern in the non-silicon-containing resin layer; forming a silicon-containing resin layer; etching the silicon-containing resin layer to have a second pattern reverse to the first pattern; selectively etching the non-silicon-containing resin layer by a RIE method employing a gas mixture containing CF4 gas and O2 gas, the non-silicon-containing resin layer having the second pattern; and etching the semiconductor layer.

Abstract: Methods for manufacturing a polarization pinned vertical cavity surface emitting laser (VCSEL). Steps include growing a lower mirror on a substrate; growing an active region on the lower mirror; growing an upper mirror on the active region; depositing a grating layer on the upper minor; and etching a grating into the grating layer.

Abstract: The invention discloses an AlGaInP-based LED with double reflective layers and a fabrication method thereof. The method includes: providing a temporary substrate; forming an epitaxial layer on a front of the temporary substrate; forming a distributed Bragg reflector on the epitaxial layer; forming an some openings in the distributed Bragg reflector, such that the arrangement of the distributed Bragg reflector is grid-like and a portion of a top of the epitaxial layer is exposed; forming a reflective metal layer on the distributed Bragg reflector and on the exposed portion of the top of the epitaxial layer, to fill the openings; bonding a permanent substrate onto the reflective metal layer; removing the temporary substrate; forming a first electrode and a second electrode at a bottom of the epitaxial layer and a top of the permanent substrate, respectively; and dicing to obtain the AlGaInP-based LED chips.

Abstract: A VCSEL includes a grating layer configured with a non-periodic, sub-wavelength grating, in which the non-periodic, sub-wavelength grating includes at least one first section configured to have a relatively low reflection coefficient and at least one second section configured to have a relatively high reflection coefficient to cause light to be reflected in a predetermined, non-Gaussian, spatial mode across the sub-wavelength grating. The VCSEL also includes a reflective layer and a light emitting layer disposed between the grating layer and the reflector, in which the sub-wavelength grating and the reflector form a resonant cavity.

Abstract: A method for producing a single-layer diffractive combiner for a head-up display having a projection unit with n light sources of ?i wavelength(s), where i=1 to n sending light towards the combiner at an angle ?p. The method includes forming interference fringes for each ?i wavelength on a photosensitive layer with an interference of two light beams from a single laser source of wavelength ?e, where the forming step is repeated n times, and each time the forming step is repeated an angle ?i between the two beams is determined according to ?i=arcsin ((?e/?i)*sin(?p)), one of the interfering beams being divergent and having a spherical wave front and the other being a plane wave, the interference of the beams generating a diffractive network with an adjustable pitch and curved contour fringe lines.

Abstract: A laser system having separately electrically operable cavities for emitting modulated narrow linewidth light with first, second and third mirror structures separated by a first active region between the first and the second and by a second active region between the second and the third. The second mirror structure has twenty of more periods of mirror pairs.

Abstract: An organic electroluminescent device comprising: a substrate; a first electrode disposed over the substrate for injecting charge of a first polarity; a second electrode disposed over the first electrode for injecting charge of a second polarity opposite to said first polarity; an organic light emitting layer disposed between the first and the second electrode, the second electrode being transparent to light emitted by the light emitting layer; and a transparent encapsulant disposed over the second electrode, wherein the transparent encapsulant comprises a microlens array formed by a top surface of the transparent encapsulant and a diffraction grating formed by a bottom surface of the transparent encapsulant.

Abstract: The present invention provides for a semiconductor laser having a narrow linewidth and low power consumption for optical communication applications. According to various embodiments of the invention, a semiconductor laser is provided which includes a grating layer comprising a plurality of segmented gratings, each including a non-grating portion and a grating portion. The segmented gratings are configured to enhance a fundamental mode of the semiconductor laser while sufficiently suppressing modes other than the fundamental mode, providing a narrow linewidth for example. The segmented gratings are also configured to provide an effective length longer than an actual length of the semiconductor laser, leading to smaller device areas and corresponding lower power consumption. A photonic integrated circuit is also provided which includes a plurality of semiconductor lasers, consistent with the present invention, as well as additional optical elements, all provided on a single substrate.

Abstract: An image sensor having micro-lenses is disclosed. The image sensor comprises a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element. A micro-lens is formed over each of the light sensitive elements. Finally, a raised ridge structure surrounds each of the micro-lenses.

Abstract: An optical semiconductor device, includes: a plurality of first diffraction grating layers disposed at a spacing from each other along first direction above first semiconductor layer, length of a lower surface of each of a plurality of first diffraction gratings along first direction being longer than a length of an upper surface of first diffraction grating; second diffraction grating layer disposed along first direction above first semiconductor layer, first and second diffraction grating layers being alternately disposed at a spacing from each other, a length of an upper surface of second diffraction grating layer along first direction being longer than the length of a lower surface of second diffraction layer; a diffraction grating including first and second diffraction grating layers; a second semiconductor layer disposed between first and second diffraction grating layers and under second diffraction grating layer; and third semiconductor layer disposed on first and second diffraction grating layers.

Abstract: A semiconductor laser that includes: a substrate; a first semiconductor multilayer reflector of a first conductive type formed on the substrate; an active region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector of a second conductive type formed on the active region; and an intermediate semiconductor layer of a first conductive type or a second conductive type formed under the first semiconductor multilayer reflector or above the second semiconductor multilayer reflector.

Abstract: Methods of manufacturing a lasing device are provided by some embodiments, the methods including: creating a silicon micro ring with a predetermined radius and a predetermined first cross-sectional dimension; creating a silicon waveguide with a predetermined second cross-sectional dimension, the silicon waveguide spaced from the silicon micro ring by a predetermined distance; and wherein the predetermined distance, the predetermined radius, the predetermined first cross-sectional dimension, and the predetermined second cross-sectional dimension are determined so that at least one first whispering gallery mode resonant frequency of the silicon micro ring and at least one second whispering gallery mode resonant frequency of the silicon micro ring are separated by an optical phonon frequency of silicon.

Abstract: There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an InX1Ga1?X1N (0<X1<1) layer on a gallium nitride-based semiconductor region in a reactor; after taking out a substrate product including the InX1Ga1?X1N layer from the reactor, forming a plurality of openings for a two-dimensional diffraction grating of the two-dimensional photonic crystal in the InX1Ga1?X1N layer to form a patterned InX1Ga1?X1N layer; and growing an AlX2Ga1?X2N (0?X2?1) layer on a top surface of the patterned InX1Ga1?X1N layer to form voids associated with the openings.

Abstract: A process using the nanoimprint technique to form the diffraction grating for the DFB-LD is disclosed. The process includes (a) coating a resist for the EB exposure on a dummy substrate, (b) irradiating the resist as varying the acceleration voltage, (c) forming a resist pattern by developing the irradiated resist, (d) coating the SOG film on the patterned resist, (e) attaching the silica substrate on the cured SOG film, and (f) removing the dummy substrate with the resist from the SOG film and the silica substrate. Using the mold thus formed, the diffraction grating for the DFB-LD is formed by the nanoimprint technique.

Abstract: The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devise light emitting diodes (LEDs) emitting in the infrared IR where light emission results from a radiative recombination of electron and holes on semiconducting single walled carbon nanotubes (SWNTs-LED). We will also show how it is possible to implement these SWNTs-LED in order to build up a laser source based on the emission properties of SWNTs. A description of the manufacturing process of such devices is also given.

Abstract: Provided is a method for producing a Group III nitride-based compound semiconductor light-emitting device, wherein a contact electrode is formed on an N-polar surface of an n-type layer through annealing at 350° C. or lower. In the case where, in a Group III nitride-based compound semiconductor device produced by the laser lift-off process, a contact electrode is formed, through annealing at 350° C. or lower, on a micro embossment surface (i.e., a processed N-polar surface) of an n-type layer from vanadium, chromium, tungsten, nickel, platinum, niobium, or iron, when a pseudo-silicon-heavily-doped layer is formed on the micro embossment surface (i.e., N-polar surface) of the n-type layer through treatment with a plasma of a silicon-containing compound gas, and treatment with a fluoride-ion-containing chemical is not carried out, ohmic contact is obtained, and low resistance is attained.

Abstract: A semiconductor element and a manufacturing method of the semiconductor element are provided. A ridge waveguide type semiconductor integrated element includes: an electrode of an EA portion and an electrode of an LD portion which are arranged so as to be away from each other; a contact layer of the EA portion and a contact layer of the LD portion which are arranged so as to be away from each other and in each of which the electrode is formed on an upper surface and an edge of at least a part of the upper surface is set to the same electric potential as that of the electrode; a passivation film as an insulative concave/convex structure extending from an edge of one of the two contact layers to an edge of the other contact layer; and a polyimide resin for embedding the passivation film.

Abstract: A vertical cavity surface emitting laser (VCSEL) (100) has a substrate (104), on which are disposed first and second distributed Bragg reflectors (DBRs) (106, 112), each DBR comprising a stack of layers of alternating refractive index, an active layer (108) disposed between the DBRs, and an aperture layer (110) disposed either between the DBRs or within one of the DBRs. The aperture layer (110) has a border (116) having an internal boundary with a plurality of indented portions defining one or more apertures. Such a VCSEL is easily manufacturable and provides a narrow bandwidth output, as well as mitigating at least some of the problems of prior art VCSELs. Mesa (102) may be etched to be non-circular and subsequent selective oxidation of aperture layer (110) results in a non-circular current confinement aperture (114) promoting higher-order lateral modes (LP21).

Abstract: The method of the invention consists of implanting ions into the surface of multilayer optical waveguides, in the highly doped layer, in a defined pattern so as to modify the refractive index of this layer.

Abstract: Provided is a nitride semiconductor light emitting diode and a method of manufacturing the same. The method includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate, in-situ depositing a mask layer on a region of the surface of the second semiconductor layer, and selectively growing a third semiconductor layer formed in a textured structure on the second semiconductor layer by depositing a semiconductor material on the second semiconductor layer and the mask layer.

Abstract: A method and system for assembling a quasicrystalline heterostructure. A plurality of particles is provided with desirable predetermined character. The particles are suspended in a medium, and holographic optical traps are used to position the particles in a way to achieve an arrangement which provides a desired property.

Abstract: A method for manufacturing a semiconductor optical device having an optical grating, includes the steps of: forming a semiconductor layer, an insulating layer and a first resin layer not containing silicon (Si); forming a second resin layer containing silicon (Si) on the first resin layer wherein the second resin layer has a pattern corresponding to the optical grating; etching the first resin layer using the second resin layer as a mask by a reactive ion etching that uses a mixed gas of oxygen and nitrogen where the first resin layer is cooled downto a first temperature during etching to form a protective layer on a side face of the etched first resin layer; increasing the temperature of the first resin layer upto a second temperature higher than the first temperature; etching the insulating layer using the patterned first resin layer as a mask; and forming the optical grating on the semiconductor layer by etching the semiconductor layer using the patterned insulating layer as a mask.

Abstract: In a method of manufacturing a photoelectric device, a transparent conductive layer is formed on a substrate, and the transparent conductive layer is partially etched using an etching solution including hydrofluoric acid. Thus, a transparent electrode having a concavo-convex pattern on its surface is formed. When the transparent conductive layer is partially etched, a haze of the transparent electrode may be controlled by adjusting an etching time of the transparent conductive layer. Also, since the etching solution is sprayed to the transparent conductive layer to etch the transparent conductive layer, the concavo-convex pattern on the surface of the transparent electrode may be easily formed even though the size of the substrate increases.