Abstract: A method of forming a buried aperture in a nitride light emitting device is described. The method involves forming an aperture layer, typically an amorphous or polycrystalline material over an active layer that includes a nitride material. The aperture layer material typically also includes nitride. The aperture layer is etched to create an aperture which is then filled with a conducting material by epitaxial regrowth. The amorphous layer is crystallized forming an electrically resistive material during or before regrowth. The conducting aperture in the electrically resistive material is well suited for directing current into a light emitting region of the active layer.

Abstract: A semiconductor optical device includes a silicon substrate and a Group III-V semiconductor gain layer. The Group III-V semiconductor gain layer is formed on the silicon substrate. The silicon substrate or the Group III-V semiconductor gain layer has a dispersion Bragg grating formed therein. In a method of manufacturing a semiconductor optical device, a Group III-V semiconductor gain layer is formed on a silicon substrate. A dispersion Bragg grating is formed on the silicon substrate or the Group III-V semiconductor gain layer.

Abstract: A method for fabricating a distributed Bragg reflector waveguide is disclosed, which includes forming a first distributed Bragg reflector on a substrate; forming a sacrificial pattern on the first distributed Bragg reflector; forming a second distributed Bragg reflector on the sacrificial pattern and the first distributed Bragg reflector; and removing the sacrificial pattern. A distributed Bragg reflector waveguide is also disclosed.

Abstract: A method of manufacturing a nitride semiconductor light emitting element includes: forming a stacked layer body of a nitride semiconductor having a second conductive-type layer, a light emitting layer, and a first conductive-type layer stacked on a growth substrate in this order; forming a first Bragg reflector made of a dielectric multilayer film above the first conductive-type layer; forming a first electrode over the first Bragg reflector with the first electrode being electrically connected to the first conductive-type layer; bonding the stacked layer body to a supporting substrate via the first Bragg reflector and the first electrode; removing the growth substrate from the stacked layer body to expose the second conductive-type layer; and forming over the exposed second conductive-type layer a second electrode and a second Bragg reflector made of a dielectric multilayer film so that the second Bragg reflector faces the first Bragg reflector across the stacked layer body.

Abstract: A method of forming a diffraction grating according to the present invention includes a step of preparing a mold having projections and recesses for forming a diffraction grating, a step of bringing the projections and recesses of the mold into contact with a resin layer in a chamber at a first pressure less than atmospheric pressure, a step of setting a pressure in the chamber to a second pressure more than the first pressure while maintaining the contact, and a step of hardening the resin layer while maintaining the contact between the resin layer and the projections and recesses so as to form a pattern for the diffraction grating on the hardened resin layer. The recesses in the projections and recesses of the mold form a closed pattern in the plane of the mold including the projections and recesses.

Abstract: A method for manufacturing a semiconductor optical device includes: forming a laminated semiconductor structure of GaN-based materials on a semiconductor wafer, the laminated semiconductor structure forming a laser diode of GaN-based materials, including an active layer having a quantum well structure; cleaving the semiconductor wafer including the laminated semiconductor structure to expose a cleaved end face of the laminated semiconductor structure; and forming an SiO2 film on the cleaved end face and performing a heat treatment to cause Ga vacancy diffusion in the active layer to disorder the quantum well structure of the active layer.

Abstract: A production device and a production method for a grating-type optical component enabling formation of a variety types of FBGs using a single phase mask and an optical component made by the production method or production device for a grating-type optical component are provided. The method involves diffusing at least one of hydrogen or deuterium into an optical fiber and altering the refractive index of the optical fiber by irradiating the fiber with non-interfering UV lamp light.

Abstract: A method for manufacturing a surface-emitting semiconductor laser having a structure in which the single horizontal mode of high power is stably maintained is provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.

Abstract: An optical modulator is provided. The optical modulator includes a ridge-shaped active region comprising a plurality of alternating high and low index layers. The ridge-shaped active region is used to confine a selective optical mode for optical modulation. A plurality of oxidized layers positioned so as to confine the selective optical mode in the middle region of the ridge-shaped active region. The oxidized layers enable the optical modulator to withstand high operating voltages both in reverse and forward bias without concern of breakdown or carrier loss.

Abstract: An improved throughput can be presented, since an influence of the deterioration in crystallinity created in the epitaxial layer can be eliminated by a simple and easy method, and a semiconductor laser device having stabilized properties such as threshold current, slope efficiency, device life time and the like can be presented. A method for manufacturing a semiconductor laser device according to the present invention comprises: forming partially a diffraction grating on a surface of a semiconductor substrate or on a film on the surface of the semiconductor substrate; and forming a multiple-layered film by forming an epitaxial layer on a surface of the diffraction grating. The operation of forming the diffraction grating includes an operation of forming the diffraction grating so that a width of the diffraction grating in a direction that is orthogonal to a cavity direction of the semiconductor laser device is presented as a width equal to or longer than a sum of a mesa width and 30 ?m.

Abstract: A method of manufacturing semiconductor laser device capable of reducing ?L, with manufacturing restrictions satisfied, is provided. In a distributed-feedback or distributed-reflective semiconductor laser device, immediately before burying regrowth of a diffraction grating, halogen-based gas is introduced to a reactor, and etching is performed on the diffraction grating so that each side wall has at least two or more crystal faces and a ratio of length of an upper side in a waveguide direction to a bottom side parallel to a (100) surface is 0 to 0.3. And, a reactive product formed on side surfaces of the diffraction grating and in trench portions between stripes of the diffraction grating at an increase of temperature for regrowth is removed. Therefore, the diffraction grating with reduced height and a sine wave shape is obtained, thereby ?L of the device is reduced. Thus, an oscillation threshold and optical output efficiency can be improved.

Abstract: A semiconductor laser has first and second diffractive grating regions. The first diffractive grating region has segments, has a gain, and has first discrete peaks of a reflection spectrum. The second diffractive grating region has segments combined to each other, and has second discrete peaks of a reflection spectrum. Each segment has a diffractive grating and a space region. Pitches of the diffractive grating are substantially equal to each other. A wavelength interval of the second discrete peaks is different from that of the first discrete peaks. A part of a given peak of the first discrete peaks is overlapped with that of the second discrete peaks when a relationship between the given peaks of the first discrete peaks and the second discrete peaks changes.

Abstract: Provided is an apparatus for manufacturing an optical fiber Bragg grating.

Abstract: A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom surface of the recesses; filling the recesses with an Epi layer; then covering the protrusive portions and starting self bonding upwards the epitaxy to finish the Epi layer structure. Such a self bonding epitaxy growing technique can prevent cavity generation caused by parameter errors of the epitaxy and reduce defect density, and improve the quality of the Epi layer and increase internal quantum efficiency.

Abstract: A method of producing a thermally stable grating allows the grating to be placed in environments where temperatures reach 1000° C. and where the grating is relatively stable and has very low loss from scatter. These gratings have spectral characteristics that allow them to be concatenated so as to form a sensor array. The method requires a step of lowering the characteristic intensity threshold of a waveguide by at least 25%, followed by irradiating the waveguide with femtosecond pulses of light having a sufficient intensity and for a sufficient duration to write the grating so that at least 60% of the grating remains after exposures of at least 10 hours at a temperature of at least 1000° C.

Abstract: A technique is provided which enables formation of nitride semiconductor layers with excellent flatness and excellent crystallinity on a gallium nitride substrate (GaN substrate), while improving the producibility of the semiconductor device using the GaN substrate. A gallium nitride substrate is prepared which has an upper surface having an off-angle of not less than 0.1° nor more than 1.0° in a <1-100> direction, with respect to a (0001) plane. Then, a plurality of nitride semiconductor layers including an n-type semiconductor layer are stacked on the upper surface of the gallium nitride substrate to form a semiconductor device such as a semiconductor laser.

Abstract: A high efficiency, and possibly highly directional, light emitting diode (LED) with an optimized photonic crystal extractor. The LED is comprised of a substrate, a buffer layer grown on the substrate (if needed), an active layer including emitting species, one or more optical confinement layers that tailor the structure of the guided modes in the LED, and one or more diffraction gratings, wherein the diffraction gratings are two-dimensional photonic crystal extractors. The substrate may be removed and metal layers may be deposited on the buffer layer, photonic crystal and active layer, wherein the metal layers may function as a mirror, an electrical contact, and/or an efficient diffraction grating.

Abstract: A tunable laser source with integrated optical modulator. The tunable laser source is a widely tunable semiconductor laser that is comprised of an active region on top of a thick, low bandgap, waveguide layer, wherein both the waveguide layer and the active region are fabricated between a p-doped region and an n-doped region. An electro-absorption modulator is integrated into the semiconductor laser, wherein the electro-absorption modulator shares the waveguide layer with the semiconductor laser.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: A method of manufacturing a semiconductor optical element, includes successively stacking a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type; applying a resist to the second semiconductor layer and patterning the resist into stripes by photolithography; forming recesses in the second semiconductor layer and a waveguide ridge adjacent to the recesses by dry-etching the second semiconductor layer only partially through the second semiconductor layer, using the resist as a mask; forming an insulating film on the waveguide ridge and in the recesses while leaving the resist; removing the insulating film from the resist so that the resist is exposed while the insulating film in the recess is left; removing the resist exposed; and forming an electrode on the waveguide ridge after removing the resist.

Abstract: A semiconductor device comprises an active region (4), a cladding layer (5,7), and a saturable absorbing layer (6) disposed within the cladding layer. The saturable absorbing layer comprises at least one portion (11a) that is absorbing for light emitted by the active region and comprises at least portion (11b) that is not absorbing for light emitted by the active region. The fabrication method of the invention enables the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) to produced after the device structure has been fabricated. This allows the degree of overlap between the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) and the optical mode of the laser to be altered after the device has been grown.

Abstract: A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

Abstract: Embodiments of controlling a fabrication process using an iso-dense bias are generally described herein. Other embodiments may be described and claimed.

Abstract: The present invention includes forming an optical guide layer on a substrate, forming a cap layer on the optical guide layer, and forming openings in parts of the optical guide layer and the cap layer to form a diffraction grating from part of the optical guide layer. The substrate is heated to a temperature less than a growth temperature of the cap layer and equal to at least a temperature at which mass transport of the cap layer occurs to cover, with part of the cap layer, the lateral faces of the optical guide layer exposed by the openings. A burying layer burying the diffraction grating is formed on the substrate, after the mass transport.

Abstract: An mold having a sub-micron, or even nano, structure is fabricated. The mold is a porous aluminum oxide mold. With the mold, a sub-micron pattern is easily imprinted on a large surface of a substrate or a LED. No expensive equipment is necessary. The fabricating process is fast and cheap and thus meets the needs of producers.

Abstract: A micro-optic device including a complicate structure and a movable mirror is made to be manufactured in a reduced length of time. A silicon substrate and a single crystal silicon device layer with an intermediate layer of silicon dioxide interposed therebetween defines a substrate on which a layer of mask material is formed and is patterned to form a mask having the same pattern as the configuration of the intended optical device as viewed in plan view. A surface which is to be constricted as a mirror surface is chosen to be in a plane of the silicon crystal. Using the mask, the device layer is vertically etched by a reactive ion dry etching until the intermediate layer is exposed. Subsequently, using KOH solution, a wet etching which is anisotropic to the crystallographic orientation is performed with an etching rate which is on the order of 0.1 ?m/min for a time interval on the order of ten minutes is performed to convert the sidewall surface of the mirror into a smooth crystallographic surface.

Abstract: Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.

Abstract: A method of fabrication of a thermally stabilized Type I fiber Bragg grating-based temperature sensing device includes doping a fiber core material with germanium or germanium oxide for enhancing photosensitivity, co-doping the fiber core material with fluorine or chorine or for increasing a mean coordination number; and ultraviolet laser inscribing a periodic or quasiperiodic modulated refractive index structure in the fiber core using a laser energy operating at less than 1000 milliJoules per square centimeter per pulse. The resulting sensor is operable for more than 1000 hours at temperatures up to at least 550 degrees Celsius.

Abstract: Method for producing a modulated grating for an optimal reflection spectrum, which grating is a multiple wavelength reflector. The method includes the following steps: a) Determining wavelengths to be reflected b) Calculating a preliminary grating c) Comparing the reflection spectrum ro(f) with the characteristics of the wanted modulated grating d) Differences lead to a directional change of ro(f) e) Calculating a target function G(z) f) Changing the grating (zk) depending on the real and imaginary part of G(z) g) Repeating steps c) to f) until the grating reflects the predetermined wavelengths.

Abstract: A surface emitting laser device is disclosed that is able to selectively add a sufficiently large loss to a high order transverse mode so as to efficiently suppress a high order transverse mode oscillation and to oscillate at high output in a single fundamental transverse mode. The surface emitting laser device includes a first resonance region that includes an active layer and spacer layers, two distributed Bragg reflectors that sandwich the resonance region, and a current confinement structure that defines a current injection region for the active layer. At least one of the distributed Bragg reflectors includes a second resonance region arranged in the current injection region excluding a predetermined region surrounding a center of the current injection region.

Abstract: The present disclosure relates to increasing the external efficiency of light emitting diodes, and specifically to increasing the outcoupling of light from an organic light emitting diode utilizing a diffraction grating.

Abstract: A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the first layer, the active layer generating light. The second layer overlies the active layer, the second layer having a first surface in contact adjacent to the active layer and a second surface having a surface that includes features that scatter light striking the second surface. A layer of transparent electrically conducing material is adjacent to the second surface and covered by a first layer of a dielectric material that is transparent to the light generated by the active layer. A mirror layer that has a reflectivity greater than 90 percent is deposited on the first layer of dielectric material.

Abstract: A fiber (Bragg) laser comprising a fiber with a cladding and a core having a (Bragg) grating inscribed in the core forming a laser cavity.

Abstract: A SAG technique is used to grow the ridge structure in a photonic semiconductor device, such as an electroabsorption modulator integrated with a distributed feedback laser (EML) assembly. The adoption of this SAG technique to grow the ridge structure results in the formation of a self-assembled and self-aligned ridge structure that has a very precise configuration. The use of this process enables straight, bent and tilted ridge structures to be formed with high precision. In addition, because the ridge structure is self-assembled and self-aligned, a lesser number of processing steps are required to create the photonic device in comparison to the known approach that uses wet chemical etching techniques to form the ridge structure. The high precision of the ridge structure and the lesser number of processing steps needed to create the device increase manufacturing yield and allow overall cost of the device to be reduced.

Abstract: A light emitting diode (LED) is provided. The LED at least includes a substrate, a saw-toothed multilayer, a first type semiconductor layer, an active emitting layer and a second type semiconductor layer. In the LED, the saw-tooth multilayer is formed opposite the active emitting layer below the first type semiconductor layer by an auto-cloning photonic crystal process. Due to the presence of the saw-tooth multilayer on the substrate of the LED, the scattered light form a back of the active emitting layer can be reused by reflecting and recycling through the saw-tooth multilayer. Thus, all light is focused to radiate forward so as to improve the light extraction efficiency of the LED. Moreover, the saw-tooth multilayer does not peel off or be cracked after any high temperature process because the saw-tooth multilayer has the performance of releasing thermal stress and reducing elastic deformation between it and the substrate.

Abstract: The invention describes the method and apparatus for enhanced efficiency in a laterally-coupled distributed feedback (LC-DFB) laser. In a device featuring the effective ridge design, lateral confinement of the guided optical modes is provided by a surface etched grating, which also serves as a DFB element of the laser. Coupling and quantum efficiency of such a LC-DFB laser both improve with an increase of the lateral mode order. In accordance with this invention, a dramatic enhancement of the laser efficiency is achievable by designing it to operate in one of the higher order modes, notably the first order mode, while all the other lateral modes, including the zero order mode, are suppressed through gain-loss discrimination.

Abstract: A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged in a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.

Abstract: A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom surface of the recesses; filling the recesses with an Epi layer; then covering the protrusive portions and starting self bonding upwards the epitaxy to finish the Epi layer structure. Such a self bonding epitaxy growing technique can prevent cavity generation caused by parameter errors of the epitaxy and reduce defect density, and improve the quality of the Epi layer and increase internal quantum efficiency.

Abstract: To provide a photonic crystal semiconductor device which enables various kinds of optical devices having a photonic crystal structure which is readily formed using a semiconductor and a semiconductor manufacturing process, and a manufacturing method thereof. The object can be achieved by a photonic crystal structure, including a lower DBR layer 1, a core layer 2, an upper DBR layer 3, and a dielectric multilayer film 6 which are sequentially laminated from an n-InP substrate 11 side, a plurality of holes 9 formed in the direction of a film thickness in the core layer 2 and the upper DBR layer 3, and a line defect portion 10 with none of the plurality of holes formed therein and disposed between the plurality of holes 9, wherein the line defect portion 10 serves as an optical waveguide.

Abstract: A semiconductor light emitting device is provided with a GaAs substrate, a quantum dot active layer formed over the GaAs substrate, a GaAs layer formed above or below the quantum dot active layer, and a diffraction grating formed from InGaP or InGaAsP and periodically provided along an propagating direction of light in the GaAs layer.

Abstract: A method for producing a luminescence diode chip, in which provision is made of a semiconductor body is provided having an epitaxially grown semiconductor layer sequence having an active zone and a radiation coupling-out area, the active zone emitting an electromagnetic radiation during operation of the luminescence diode, a large part of said electromagnetic radiation being coupled out via the radiation coupling-out area. A luminescence conversion material is arranged downstream of the radiation coupling-out area in an emission direction of the semiconductor body. A radiation-transmissive covering body having a first main area, a second main area opposite to the first main area, and also side areas connecting the first and second main areas. The covering body is applied to the radiation coupling-out area of the semiconductor layer sequence in such a way that the first main area faces the radiation coupling-out area.

Abstract: A method for fabricating an optical identification element is provided, wherein a removable plate or substrate having photosensitive material fabricated thereon, one or more gratings are written on the photosensitive material, then lines are etched to create one or more separate optical identification elements. The one or more gratings may be written by exposing the photosensitive material to ultraviolet (UV) light. The lines may be etched to create the one or more separate optical identification elements by photolithography to define/create the same.

Abstract: A distributed Bragg reflector (DBR) includes a base substrate and a gain medium formed on the base substrate. A waveguide positioned above the base substrate in optical communication with the gain medium and defines a gap extending between the base substrate and the waveguide along a substantial portion of the length thereof. The waveguide may have a grating formed therein. A heating element is in thermal contact with the waveguide and electrically coupled to a controller configured to adjust optical properties of the waveguide by controlling power supplied to the heating element.

Abstract: A method of fiber core material band gap engineering for artificially modifying fiber material properties is provided. The method includes doping the fiber core material with one or more atoms for enhancing photosensitivity to the fiber material. The method also includes co-doping the fiber core material with one or more ions for enhancing an amorphous network crosslink mean coordination number. The method further includes thermally annealing the fiber core material for widening the band gap of the fiber core material.

Abstract: The invention relates to a saturable absorber structure (10) with multiple-layer epitaxial heterostructure absorbers. Typically the structure comprises first absorber layers of a quantum well semiconductor QW-material, which has a nonlinearly on radiation intensity dependent optical absorption; first contacting layers of a first optically transparent semiconductor material against a surface or surfaces of said first absorber layers; and a first Bragg-reflector (23). The first contacting layers have lattice fit or pseudomorphism with said first absorber layers. The absorber layer (13, 13a, 13b) of the QW-material has a thickness (S) of at maximum 60 nm.

Abstract: A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.

Abstract: A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.

Abstract: There is provided a thin film forming apparatus for precisely forming a film of an organic EL material made of a polymer without a positional deviation and at a high throughput. A pixel portion is divided into a plurality of pixel lines by banks, and a head portion of the thin film forming apparatus is moved along the pixel lines, so that a coating liquid (R), a coating liquid (G), and a coating liquid (B) can be applied respectively in a stripe shape at the same time. Then, luminescent layers emitting lights of respective colors of red, green and blue can be formed by heating these coating liquids.

Abstract: There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an InX1Ga1-X1N (0<X1<1) layer on a gallium nitride-based semiconductor region in a reactor; after taking out a substrate product including the InX1Ga1-X1N layer from the reactor, forming a plurality of openings for a two-dimensional diffraction grating of the two-dimensional photonic crystal in the InX1Ga1-X1N layer to form a patterned InX1Ga1-X1N layer; and growing an AlX2Ga1-X2N (0?X2?1) layer on a top surface of the patterned InX1Ga1-X1N layer to form voids associated with the openings.

Abstract: The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, a first electrode structure, and a second electrode structure. The substrate has an upper surface and a lower surface. The substrate therein includes at least one formed-through hole which is filled with a thermally conductive material. The multi-layer structure is formed on the upper surface of the substrate and includes a light-emitting region. The first electrode structure is formed on the multi-layer structure, and the second electrode structure is formed on the lower surface of the substrate. In particular, the heat generated during the operation of the semiconductor light-emitting device is conducted to the thermally conductive material and then is dissipated therefrom.