Implanting To Form Insulator Patents (Class 438/423)
  • Device isolation methods for a semiconductor device
    Patent number: 5807784
    Abstract: A method of forming a device isolation layer in a semiconductor device comprising the steps of implanting oxygen ions in a field region of a major surface of semiconductor substrate, and oxidizing the oxygen implanted region to form a field oxide layer having an upper portion of first thickness formed above the major surface of the semiconductor substrate, and a lower portion of second thickness formed in the semiconductor substrate, wherein the ratio of first thickness to second thickness is not less than 1 to 2.
    Type: Grant
    Filed: December 5, 1995
    Date of Patent: September 15, 1998
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Hyung-seob Kim
  • Radiation-hardening of SOI by ion implantation into the buried oxide layer
    Patent number: 5795813
    Abstract: The radiation hardness of a silicon-on-insulator structure is improved by planting dopant ions, such as Si, into the buried oxide layer. The dopant ions are implanted in the buried oxide layer, near, but not at, the active Si layer/buried oxide layer interface. This implantation creates electron traps/recombination centers in the buried oxide layer.
    Type: Grant
    Filed: May 31, 1996
    Date of Patent: August 18, 1998
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Harold Hughes, Patrick McMarr
  • Type silicon material with enhanced surface mobility
    Patent number: 5633174
    Abstract: A new-type silicon material is produced by hydrogen ion implantation and subsequent annealing, the annealing being preferably in two steps. The present invention raises surface mobility of a silicon wafer and produces a buried high-resistivity layer beneath a silicon surface layer. The resulting products are particularly useful for the improvement of yield and speed and radiation hardness of very large scale integrated circuits.
    Type: Grant
    Filed: November 20, 1992
    Date of Patent: May 27, 1997
    Assignee: Biota Corp.
    Inventor: Jianming Li