Abstract: An array substrate and a display panel. The array substrate provided in the embodiments of the present application includes: a base including a flat portion and a recess portion so that the base includes a concave hole corresponding to the bending area; a semiconductor component layer provided on the base and including a plurality of interlayer insulation layers and a plurality of metal layers, the interlayer insulation layers being not aligned horizontally in the peripheral area and the wire switching area to form a stepped hole including a first hole and a second hole, wherein a third metal layer of the metal layers extends along a sidewall and a bottom of the stepped hole and is electrically connected to a first metal layer of the metal layers.

Abstract: A display device includes: multiple layers including a display element layer, the multiple layers including a sealing layer for covering the display element layer; and a polarization plate attached to a first layer and a second layer of the multiple layers with an adhesive layer. The multiple layers includes inorganic films and organic films. All of the inorganic films are disposed to avoid an edge area that is at least a part of a peripheral portion of the resin substrate. The polarization plate has an edge above the edge area of the resin substrate. The first layer is disposed to avoid the edge area of the resin substrate. The first layer at an edge has an upper surface sloping downward toward the edge area. The second layer has a portion in the edge area of the resin substrate and between the resin substrate and the adhesive layer.

Abstract: A display panel and a display device, the display panel includes an encapsulation cover plate and a glass substrate, a light emitting unit and a driving circuit layer are arranged between the encapsulation cover plate and the glass substrate, a conductive layer and an encapsulation material layer are overlaid and arranged between the encapsulation region of the encapsulation cover plate and the glass substrate, the conductive layer is provided with a plurality of openings arranged at intervals, and an orthographic projection of the opening on the encapsulation material layer is separated from a midline between an inner edge and an outer edge of the encapsulation material layer.

Abstract: The present invention relates to a method for producing a group III compound substrate, including: a base substrate forming step for forming a group III nitride base substrate by a vapor phase synthesis method; a seed substrate forming step for forming a seed substrate on the base substrate; and a group III compound crystal forming step for forming a group III compound crystal on the seed substrate by a hydride vapor phase epitaxy method. The group III compound substrate of the present invention is produced by the method for producing a group III compound substrate of the present invention. According to the present invention, a large-sized and high-quality group III compound substrate can be obtained at a low cost while taking advantage of the high film formation rate characteristic of the hydride vapor phase epitaxy method.

Abstract: A method of manufacturing a display device includes forming a first electrode on a substrate, forming a bank layer on the first electrode, wherein the bank layer includes an opening portion exposing at least a portion of the first electrode, forming a first bank layer and a second bank layer by baking the bank layer, wherein the second bank layer is on the first bank layer and has liquid repellency, forming a first layer on the first electrode, and forming a third bank layer and a fourth bank layer by baking the first bank layer and the second bank layer, wherein the fourth bank layer is on the third bank layer and has liquid repellency, wherein the fourth bank layer is thinner than the second bank layer.

Abstract: A display device includes a substrate includes a first emitter and a second emitter thereon. The first emitter includes a first lower active quantum well (QW) region that has a first emission spectrum spanning a first spectral range. The second emitter includes (i) an upper active QW region that has a second emission spectrum spanning a second spectral range that is distinct from the first spectral range, (ii) a second lower active QW region having the first emission spectrum and being located between the upper active QW region and the substrate, and (iii) a barrier layer between the second lower active QW region and the upper active QW region for suppressing emission of the second lower active QW region.

Abstract: An organic light-emitting display device includes a pixel area and a transmitting area adjacent to the pixel area. The organic light-emitting display device includes an organic light-emitting diode, a driving power wiring, and a heating pattern adjacent to the driving power wiring. The organic light-emitting diode includes a first electrode disposed in the pixel area, an organic light-emitting layer disposed on the first electrode and a second electrode disposed on the organic light-emitting layer. The driving power wiring is electrically connected to the second electrode. A portion of the organic light-emitting layer is disposed in the transmitting area. The organic light-emitting layer includes an opening area overlapping the heating pattern and at least a portion of the driving power wiring. The second electrode electrically contacts the driving power wiring through the opening area.

Abstract: A semiconductor light emitting device includes a substrate structure, first and second regions and a main region; a light emitting structure, first and second electrode layers, an interlayer insulating layer, and a pad electrode layer. The light emitting structure is provided on the third region. The first electrode layer is provided between the substrate structure and the light emitting structure, and has a first electrode extension that extends into the first region. The second electrode layer is provided between the first electrode layer and the light emitting structure, and has a second electrode extension that extends into the second region. The interlayer insulating layer is provided between the first and second electrode layers, and has an opening exposing a portion of the first electrode extension. The pad electrode layer is provided on the interlayer insulating layer, and is connected to the portion of the first electrode extension through the opening.

Abstract: The present disclosure provides a method for fabricating a displaying backplane, a displaying backplane and a displaying device, and relates to the technical field of displaying. The method includes forming a first active layer and a second active layer on a substrate base plate; forming a first grid insulating layer covering the first active layer and the second active layer; forming a first grid on the first grid insulating layer; performing ion implantation to the first no-channel regions, the second no-channel regions and the second channel region, to reduce oxygen-vacancy concentrations of the first no-channel regions, the second no-channel regions and the second channel region; and forming a second grid on the first grid insulating layer.

Abstract: Provided is an ultrasonic device including a substrate and a vibration plate provided on the substrate and having one or more vibrators configured to generate an ultrasonic wave by vibration. The vibration plate has a movable portion provided with the vibrator and configured to vibrate accompanying with the vibration of the vibrator, and a fixed portion fixed to the substrate. A vibration frequency of a reflected wave based on a wave transmitted from the movable portion and received by the movable portion is outside a vibration frequency band region of the vibrator.

Abstract: The organic electroluminescence display device of an embodiment of the present invention includes a substrate, a plurality of pixels formed on the substrate, and a sealing film that covers the plurality of pixels. The sealing film includes a first barrier layer, a base layer covering the top surface of the first barrier layer, an inter layer locally formed on the top surface of the base layer, and a second barrier layer covering the top surface of the base layer and the top surface of the inter layer. The inter layer is formed so as to cover a step on the top surface of the base layer.

Abstract: Proposed are a layered GaN compound, a nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by M1-xGayNz (M is at least one of Group II elements, and 0<x?1.0, 0.6?y?1.25, 0.75?z?1.5).

Abstract: A light emitting device module including a printed circuit board, upper and lower electrodes disposed on opposing surfaces of the printed circuit board, light emitting devices configured to emit light in a direction away from the printed circuit board, and a molding layer surrounding the light emitting devices, in which each light emitting device includes a light emitting structure, a substrate disposed on the light emitting structure, and bump electrodes disposed between the light emitting structure and the printed circuit board, the molding layer covers side surfaces of the substrates, a number of the lower electrodes is less than a number of the bump electrodes of the plurality of light emitting devices, and each of the light emitting devices is configured to be driven independently.

Abstract: A pixel structure includes: a pixel definition layer having a first side and a second side which are opposite to each other in a thickness direction of the pixel definition layer, the pixel definition layer including a pixel opening having sidewalls; an island-shaped portion disposed in the pixel opening of the pixel definition layer and spaced apart from the sidewalls of the pixel opening, the island-shaped portion having sidewalls, and the sidewalls of the pixel opening and the sidewalls of the island-shaped portion defining a ring-shaped pixel groove; and a light emitting unit, at least a part of which is disposed in the ring-shaped pixel groove.

Abstract: A display device including a flexible display module and provides a display surface on which an image is displayed. The flexible display module includes a display panel including a light-emitting device and a sensor unit disposed on the display panel. The sensor unit senses pressure applied to the flexible display module in a folded-in mode in which the flexible display module is folded such that a portion of the display surface faces another portion of the display surface.

Abstract: The present disclosure provides an OLED display device, a display panel and a manufacturing method of the OLED display device, and belongs to the field of display technology. The OLED display device includes a light-emitting layer, a material of the light-emitting layer includes a host light-emitting material and a carrier balance material doped in the host light-emitting material; and the carrier balance material is used for balancing an electron mobility and a hole mobility of the light-emitting layer.

Abstract: The present disclosure relates to display panels and display devices including the display panels, and more for example, to a display panel with excellent luminance and a display device including the display panel, by including an insulating film having an inclined portion with a high-inclined portion.

Abstract: The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.

Abstract: A display apparatus includes a substrate, a plurality of pixelated first electrodes disposed on the substrate, an uneven surface structure or a porous structure disposed between adjacent pixelated first electrodes, a plurality of OLED lighting elements disposed on the pixelated first electrodes and the uneven surface structure or the porous structure, a second electrode layer disposed on the OLED lighting elements. Equivalent transport distance of carriers along the uneven or porous surface increases accordingly, thereby resulting in reduced lateral leakage current between adjacent pixelated first electrodes.

Abstract: A system and method for growing a gallium nitride (GaN) structure that includes providing a template; and growing at least a first GaN layer on the template using a first sputtering process, wherein the first sputtering process includes: controlling a temperature of a sputtering target, and modulating between a gallium-rich condition and a gallium-lean condition, wherein the gallium-rich condition includes a gallium-to-nitrogen ratio having a first value that is greater than 1, and wherein the gallium-lean condition includes the gallium-to-nitrogen ratio having a second value that is less than the first value. Some embodiments include a load lock configured to load a substrate wafer into the system and remove the GaN structure from the system; and a plurality of deposition chambers, wherein the plurality of deposition chambers includes a GaN-deposition chamber configured to grow at least the first GaN layer on a template that includes the substrate wafer.

Abstract: Disclosed are a display substrate, a preparation method thereof, and a display apparatus. The display substrate includes: a driving substrate, a first electrode, an auxiliary electrode, a pixel definition layer and a hole injection layer. The driving substrate includes a driving circuit and a dielectric layer covering the driving circuit; the first electrode and the auxiliary electrode are on a side of the dielectric layer of the driving substrate away from the driving circuit; the auxiliary electrode at least partially surrounds the first electrode; the pixel definition layer is on a side of the first electrode and the auxiliary electrode away from the driving substrate; the pixel definition layer includes a pixel opening, and the first electrode is at least partially exposed through the pixel opening and is electrically connected to the driving circuit; and the hole injection layer is in the pixel opening and stacked with the first electrode.

Abstract: A group III-nitride laminated substrate includes a sapphire substrate, a first layer that is formed on the sapphire substrate and is made of aluminum nitride, a second layer that is formed on the first layer and serves as an n-type layer made of gallium nitride and doped with an n-type dopant, a third layer that is formed on the second layer and serves as a light-emitting layer made of a group III-nitride, and a fourth layer that is formed on the third layer and serves as a p-type layer made of a group III-nitride and doped with a p-type dopant. The second layer has a thickness of 7 ?m or less. A half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less.

Abstract: A method for manufacturing a semiconductor element includes: providing a wafer comprising first and second regions at an upper surface of the wafer, the second region being located at a periphery of the first region and being at a lower position than the first region; and forming a semiconductor layer made of a nitride semiconductor at the upper surface of the wafer. In a top-view, the first region comprises an extension portion at an end portion of the first region in a first direction that passes through the center of the wafer parallel to an m-axis of the semiconductor layer, the extension portion extending in a direction from a center of the wafer toward an edge of the wafer or in a direction from an edge of the wafer toward a center of the wafer.

Abstract: A semiconductor optical element includes a first cladding layer; a second cladding layer formed in a ridge shape; and optical confinement layer interposed between the first cladding layer and the second cladding layer to propagate light, wherein the second cladding layer is configured with a ridge bottom layer; a ridge intermediate layer; and a ridge top layer in this order from the optical confinement layer, and the ridge intermediate layer is formed wider in cross section perpendicular to the optical axis—the light propagating direction in optical confinement layer—than the ridge bottom layer and the ridge top layer.

Abstract: An organic light-emitting device and an apparatus including the same are disclosed. The organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode. The organic layer includes an emission layer, the emission layer includes a first compound, a second compound, a third compound, and a fourth compound, the first compound is represented by Formula 1, the second compound is represented by Formula 2, the third compound is represented by Formula 3, the fourth compound is represented by any one of Formulae 4-1 to 4-3, each as respectively described in the detailed description.

Abstract: Methods for activating a p-type dopant in a group III-Nitride semiconductor are provided. In embodiments, such a method comprises annealing, in situ, a film of a group III-Nitride semiconductor comprising a p-type dopant formed via metalorganic chemical vapor deposition (MOCVD) at a first temperature for a first period of time under an atmosphere comprising NH3 and N2; and cooling, in situ, the film of the group III-Nitride semiconductor to a second temperature that is lower than the first temperature under an atmosphere comprising N2 in the absence of NH3, to form an activated p-type group III-Nitride semiconductor film.

Abstract: A transparent display device includes a display panel including first areas which are emission areas and second areas which are transmission areas, the display panel includes a first substrate and a second substrate facing each other, the first substrate includes an insulating layer having an open hole that is prepared by removing the insulating layer by at least a partial thickness in the second area, and the second substrate includes a transparent spacer located in the second area and pulled into the open hole.

Abstract: An organic light-emitting device and an apparatus including the same are disclosed. The organic light-emitting device includes: a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode. The organic layer includes an emission layer, the emission layer includes a first compound, a second compound, a third compound, and a fourth compound, the first compound is represented by Formula 1, the second compound is represented by Formula 2A or Formula 2B, the third compound is represented by Formula 3, the fourth compound is represented by Formula 4, each as respectively described in the detailed description.

Abstract: A method includes: introducing a gas including gallium, an ammonia gas, and a gas including a p-type impurity to a reactor and forming a first p-type nitride semiconductor layer on a first light-emitting layer in a state in which the reactor has been heated to a first temperature; lowering a temperature of the reactor from the first temperature to a second temperature; introducing an ammonia gas with a first flow rate to the reactor and increasing the temperature of the reactor from the second temperature to a third temperature; and introducing a gas including gallium, an ammonia gas with a second flow rate, and a gas including an n-type impurity to the reactor, and forming a second n-type nitride semiconductor layer on the first p-type nitride semiconductor layer in a state in which the reactor has been heated to the third temperature.

Abstract: A method for the production of a diode laser having a laser bar, wherein a metal layer having raised areas is used which is located between the n-side of the laser bar and the cover. The metal layer can be plastically deformed during installation without volume compression in the solid physical state. As a result the laser module can be reliably installed and a slight deviation (smile value) of the emitters from a centre line is achieved.

Abstract: A lift-off method includes a relocation substrate joining step of joining a relocation substrate to a surface of an optical device layer of an optical device wafer with a joining member interposed therebetween, thereby forming a composite substrate, a buffer layer breaking step of applying a pulsed laser beam having a wavelength transmittable through an epitaxy substrate and absorbable by a buffer layer to the buffer layer from a reverse side of the epitaxy substrate of the optical device wafer of the composite substrate, thereby breaking the buffer layer, and an optical device layer relocating step of peeling off the epitaxy substrate from the optical device layer, thereby relocating the optical device layer to the relocation substrate. In the buffer layer breaking step, irradiating conditions of the pulsed la-ser beam are changed for respective ring-shaped areas of the buffer layer, and the pulsed laser beam is applied to the optical device wafer under the changed irradiating conditions.

Abstract: Highly thermal and photo-stable inorganic-organic hybrid phosphor compounds, in which a copper (I) halide module is coordinated with a multi-dentate organic ligand. Also disclosed are semiconductor and light emitting devices comprising these materials, including light emitting diodes, and methods of preparing these materials and devices.

Abstract: A display panel and method of manufacturing the same are provided. The method of manufacturing the display panel includes the steps of providing a substrate, forming a gate on the substrate, forming a gate insulating layer on the gate and the substrate, forming a polysilicon layer on the gate insulating layer, performing a first gray-scale mask process on the polysilicon layer to form a source region, a drain region and an active region located between the source region and the drain region by the polysilicon layer, forming an interlayer dielectric layer on the gate insulating layer and the polysilicon layer, forming a first electrode layer on the interlayer dielectric layer, performing a second gray-scale mask process on the first electrode layer and the interlayer dielectric layer.

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).

Abstract: Solid state light emitting micropixels array structures having hydrogen barrier layers to minimize or eliminate undesirable passivation of doped GaN structures due to hydrogen diffusion.

Abstract: A display apparatus having improved reliability and preventing or reducing damage to an organic light-emitting diode (OLED), and a method of manufacturing the display apparatus by arranging a protective layer on an opposite electrode during a photo-patterning process, are provided. The display apparatus includes: a substrate; a pixel electrode on the substrate; a pixel defining layer on the pixel electrode, the pixel defining layer having a first opening that exposes a center of the pixel electrode; an auxiliary electrode on the pixel defining layer; an intermediate layer on the pixel electrode; an opposite electrode facing the pixel electrode with the intermediate layer therebetween; a first protective layer on the opposite electrode; and a contact electrode on the first protective layer, the contact electrode electrically contacting the auxiliary electrode and the opposite electrode.

Abstract: The present specification relates to a coating composition comprising a compound represented by Chemical Formula 1; and an ionic compound comprising an anion group represented by Chemical Formula 10, an organic light emitting device using the same, and a method for manufacturing the same.

Abstract: Embodiments provide a high aspect ratio via for coupling a top electrode of a vertically oriented component to the substrate, where the top electrode of the component is coupled to the via by a conductive bridge, and where the bottom electrode of the component is coupled to substrate. Some embodiments provide for mounting the component by a component wafer and separating the components while mounted to the substrate. Some embodiments provide for mounting individual components to the substrate.

Abstract: Disclosed are a unit pixel of a microdisplay and a method of manufacturing the same. In the unit pixel, each of the sub-pixels forming blue, green, and red light is vertically stacked on the growth substrate. As a result, the area of a unit pixel may be reduced, and transfer processes may be facilitated.

Abstract: Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a method includes performing p-side processing of a first component. The p-side processing is performed from a direction adjacent to a surface of a p-side semiconductor layer of the first component that is opposite to an active light emitting layer of the first component. The method also includes aligning first contacts of the first component with second contacts of the second component, and subsequently performing hybrid bonding of the first component to the second component by performing dielectric bonding of a first dielectric material of the first component with a second dielectric material of the second component at a first temperature, and subsequently performing metal bonding of the first contacts of the first component with the second contacts of the second component by annealing the first contacts and the second contacts at a second temperature.

Abstract: An electrical energy system includes fuel cells and a battery, as well as a DC converter arranged between the fuel cell and the high-voltage battery, wherein the DC converter is a buck-boost converter, having two series-connected semiconductor switches in one of its two current pathways, between which an inductance is connected, which joins the two current pathways of the DC converter. A related method for operating an electrical energy system for a motor vehicle is also provided.

Abstract: An organic light emitting diode (OLED) display panel and a method of manufacturing the same are provided. The OLED display panel includes a base substrate, a thin film transistor layer, an OLED device layer and a packaging layer sequentially disposed. The packaging layer includes a first inorganic packaging layer, a first organic layer and a second inorganic packaging layer sequentially disposed. The first inorganic packaging layer is formed with a first groove and the first organic packaging layer is formed with a second groove.

Abstract: A method of manufacturing an electroluminescent device includes forming a first patterned structure in a first pixel through a first opening of a first sacrificial layer; removing the first sacrificial layer; forming a second patterned structure in a second pixel through a second opening of a second sacrificial layer; removing the second sacrificial layer; and removing a first patterned protecting layer from the first patterned structure and a second patterned protecting layer from the second patterned structure to respectively form a first patterned light-emitting layer and a second patterned light-emitting layer.

Abstract: The array of gallium-nitride (GaN) nanocolumns have quantum wells in a polar c-plane or in a semi-polar plane to emit light directed to ends of the nanocolumns and an interstitial filler material with light emitted in the nanocolumns being guided to exit from an end of the nanocolumns.

Abstract: The present application relates to an organic light-emitting diode (OLED) encapsulation structure, a method of encapsulating an organic light-emitting diode (OLED), and an organic light-emitting diode (OLED) display device. The OLED encapsulation structure includes a substrate, a self-healing encapsulation layer, and at least two inorganic encapsulation layers, wherein a cavity is formed between two adjacent layers of the inorganic encapsulation layers, a layer of the self-healing encapsulation layer is provided in the cavity, and one of the inorganic encapsulation layers covers the OLED device. The self-healing encapsulation layer 13 is used to achieve self-healing of cracks at room temperature to prevent water and oxygen from entering the interior of the OLED panel through cracks.

Abstract: A method of making a semiconductor device, comprising: forming a plurality of semiconductor seeds of a first III-nitride material through a mask provided over a substrate; growing a second III-nitride semiconductor material; planarizing the grown second semiconductor material to form a plurality of discrete base elements having a substantially planar upper surface. Preferably the step of planarizing involves performing atomic distribution of III type atoms of the grown second semiconductor material under heating to form the planar upper surface, and without supply of III type atoms is carried out during the step of planarization.

Abstract: Some embodiments of the present disclosure provide a light-emitting diode package. The light-emitting diode package includes a transparent substrate. The light-emitting diode package also includes a first light-emitting diode which is disposed on the transparent substrate and has a first multiple quantum well structure. The light-emitting diode package further includes a second light-emitting diode which is disposed on the transparent substrate and has a second multiple quantum well structure. The first multiple quantum well structure and the second multiple quantum well structure are disposed to emit lights with different wavelengths.

Abstract: A micro light-emitting diode includes a first micro light-emitting diode including a first light-emitting layer and emitting light at a first wavelength, and a second micro light-emitting diode including the first light-emitting layer and a second light-emitting layer emitting light at a second wavelength longer than the first wavelength, in which the second light-emitting layer is a nitride semiconductor layer doped with a second rare earth element, and a nitride semiconductor of the first micro light-emitting diode and the nitride semiconductor of the second micro light-emitting diode are separated from each other.

Abstract: A nanofluid contact potential difference cell comprises a cathode with a lower work function and an anode with a higher work function separated by a nanometer-scale spaced inter-electrode gap containing a nanofluid with intermediate work function nanoparticle clusters. The cathode comprises a refractory layer and a thin film of electrosprayed dipole nanoparticle clusters partially covering a surface of the refractory layer. A thermal power source, placed in good thermal contact with the cathode, drives an electrical current through an electrical circuit connecting the cathode and anode with an external electrical load in between. A switch is configured to intermittently connect the anode and the cathode to maintain non-equilibrium between a first current from the cathode to the anode and a second current from the anode to the cathode.

Abstract: A composition of matter comprising at least one nanostructure grown epitaxially on an optionally doped ?-Ga2O3 substrate, wherein said nanostructure comprises at least one group III-V compound.