Abstract: A display panel and method of manufacturing the same are provided. The method of manufacturing the display panel includes the steps of providing a substrate, forming a gate on the substrate, forming a gate insulating layer on the gate and the substrate, forming a polysilicon layer on the gate insulating layer, performing a first gray-scale mask process on the polysilicon layer to form a source region, a drain region and an active region located between the source region and the drain region by the polysilicon layer, forming an interlayer dielectric layer on the gate insulating layer and the polysilicon layer, forming a first electrode layer on the interlayer dielectric layer, performing a second gray-scale mask process on the first electrode layer and the interlayer dielectric layer.

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).

Abstract: Solid state light emitting micropixels array structures having hydrogen barrier layers to minimize or eliminate undesirable passivation of doped GaN structures due to hydrogen diffusion.

Abstract: A display apparatus having improved reliability and preventing or reducing damage to an organic light-emitting diode (OLED), and a method of manufacturing the display apparatus by arranging a protective layer on an opposite electrode during a photo-patterning process, are provided. The display apparatus includes: a substrate; a pixel electrode on the substrate; a pixel defining layer on the pixel electrode, the pixel defining layer having a first opening that exposes a center of the pixel electrode; an auxiliary electrode on the pixel defining layer; an intermediate layer on the pixel electrode; an opposite electrode facing the pixel electrode with the intermediate layer therebetween; a first protective layer on the opposite electrode; and a contact electrode on the first protective layer, the contact electrode electrically contacting the auxiliary electrode and the opposite electrode.

Abstract: The present specification relates to a coating composition comprising a compound represented by Chemical Formula 1; and an ionic compound comprising an anion group represented by Chemical Formula 10, an organic light emitting device using the same, and a method for manufacturing the same.

Abstract: Embodiments provide a high aspect ratio via for coupling a top electrode of a vertically oriented component to the substrate, where the top electrode of the component is coupled to the via by a conductive bridge, and where the bottom electrode of the component is coupled to substrate. Some embodiments provide for mounting the component by a component wafer and separating the components while mounted to the substrate. Some embodiments provide for mounting individual components to the substrate.

Abstract: Disclosed are a unit pixel of a microdisplay and a method of manufacturing the same. In the unit pixel, each of the sub-pixels forming blue, green, and red light is vertically stacked on the growth substrate. As a result, the area of a unit pixel may be reduced, and transfer processes may be facilitated.

Abstract: Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a method includes performing p-side processing of a first component. The p-side processing is performed from a direction adjacent to a surface of a p-side semiconductor layer of the first component that is opposite to an active light emitting layer of the first component. The method also includes aligning first contacts of the first component with second contacts of the second component, and subsequently performing hybrid bonding of the first component to the second component by performing dielectric bonding of a first dielectric material of the first component with a second dielectric material of the second component at a first temperature, and subsequently performing metal bonding of the first contacts of the first component with the second contacts of the second component by annealing the first contacts and the second contacts at a second temperature.

Abstract: An electrical energy system includes fuel cells and a battery, as well as a DC converter arranged between the fuel cell and the high-voltage battery, wherein the DC converter is a buck-boost converter, having two series-connected semiconductor switches in one of its two current pathways, between which an inductance is connected, which joins the two current pathways of the DC converter. A related method for operating an electrical energy system for a motor vehicle is also provided.

Abstract: An organic light emitting diode (OLED) display panel and a method of manufacturing the same are provided. The OLED display panel includes a base substrate, a thin film transistor layer, an OLED device layer and a packaging layer sequentially disposed. The packaging layer includes a first inorganic packaging layer, a first organic layer and a second inorganic packaging layer sequentially disposed. The first inorganic packaging layer is formed with a first groove and the first organic packaging layer is formed with a second groove.

Abstract: A method of manufacturing an electroluminescent device includes forming a first patterned structure in a first pixel through a first opening of a first sacrificial layer; removing the first sacrificial layer; forming a second patterned structure in a second pixel through a second opening of a second sacrificial layer; removing the second sacrificial layer; and removing a first patterned protecting layer from the first patterned structure and a second patterned protecting layer from the second patterned structure to respectively form a first patterned light-emitting layer and a second patterned light-emitting layer.

Abstract: The array of gallium-nitride (GaN) nanocolumns have quantum wells in a polar c-plane or in a semi-polar plane to emit light directed to ends of the nanocolumns and an interstitial filler material with light emitted in the nanocolumns being guided to exit from an end of the nanocolumns.

Abstract: The present application relates to an organic light-emitting diode (OLED) encapsulation structure, a method of encapsulating an organic light-emitting diode (OLED), and an organic light-emitting diode (OLED) display device. The OLED encapsulation structure includes a substrate, a self-healing encapsulation layer, and at least two inorganic encapsulation layers, wherein a cavity is formed between two adjacent layers of the inorganic encapsulation layers, a layer of the self-healing encapsulation layer is provided in the cavity, and one of the inorganic encapsulation layers covers the OLED device. The self-healing encapsulation layer 13 is used to achieve self-healing of cracks at room temperature to prevent water and oxygen from entering the interior of the OLED panel through cracks.

Abstract: A method of making a semiconductor device, comprising: forming a plurality of semiconductor seeds of a first III-nitride material through a mask provided over a substrate; growing a second III-nitride semiconductor material; planarizing the grown second semiconductor material to form a plurality of discrete base elements having a substantially planar upper surface. Preferably the step of planarizing involves performing atomic distribution of III type atoms of the grown second semiconductor material under heating to form the planar upper surface, and without supply of III type atoms is carried out during the step of planarization.

Abstract: Some embodiments of the present disclosure provide a light-emitting diode package. The light-emitting diode package includes a transparent substrate. The light-emitting diode package also includes a first light-emitting diode which is disposed on the transparent substrate and has a first multiple quantum well structure. The light-emitting diode package further includes a second light-emitting diode which is disposed on the transparent substrate and has a second multiple quantum well structure. The first multiple quantum well structure and the second multiple quantum well structure are disposed to emit lights with different wavelengths.

Abstract: A micro light-emitting diode includes a first micro light-emitting diode including a first light-emitting layer and emitting light at a first wavelength, and a second micro light-emitting diode including the first light-emitting layer and a second light-emitting layer emitting light at a second wavelength longer than the first wavelength, in which the second light-emitting layer is a nitride semiconductor layer doped with a second rare earth element, and a nitride semiconductor of the first micro light-emitting diode and the nitride semiconductor of the second micro light-emitting diode are separated from each other.

Abstract: A nanofluid contact potential difference cell comprises a cathode with a lower work function and an anode with a higher work function separated by a nanometer-scale spaced inter-electrode gap containing a nanofluid with intermediate work function nanoparticle clusters. The cathode comprises a refractory layer and a thin film of electrosprayed dipole nanoparticle clusters partially covering a surface of the refractory layer. A thermal power source, placed in good thermal contact with the cathode, drives an electrical current through an electrical circuit connecting the cathode and anode with an external electrical load in between. A switch is configured to intermittently connect the anode and the cathode to maintain non-equilibrium between a first current from the cathode to the anode and a second current from the anode to the cathode.

Abstract: A composition of matter comprising at least one nanostructure grown epitaxially on an optionally doped ?-Ga2O3 substrate, wherein said nanostructure comprises at least one group III-V compound.

Abstract: A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.

Abstract: A semiconductor light-emitting element having an emission peak wavelength of 395 nm or more and 425 nm or less, comprises: a substrate including a first surface and a second surface, at least one surface selected from the group consisting of the first and second surfaces having an uneven region; a semiconductor layer on the first surface; and a multilayer reflective film on the second surface or the semiconductor layer, wherein the multilayer reflective film includes a structure having a plurality of first dielectric films and a plurality of second dielectric films, the first dielectric films and the second dielectric films being alternately stacked.

Abstract: Provided is a semiconductor light-emitting device which can mitigate a multipeak in an emission spectrum in a bonding-type semiconductor light-emitting device having an InP cladding layer. The semiconductor light-emitting device of the present disclosure includes a first conductive type InP cladding layer, a semiconductor light-emitting layer, and a second conductive type InP cladding layer provided sequentially over a conductive support substrate, the second conductive type InP cladding layer being on a light extraction side, and the semiconductor light-emitting device further includes a metal reflective layer, between the conductive support substrate and the first conductive type InP cladding layer, for reflecting light emitted from the semiconductor light-emitting layer; and a plurality of recesses provided in a surface of the second conductive type InP cladding layer.

Abstract: A condensed cyclic compound represented by Formula 1: wherein, in Formula 1, groups and variables are the same as described in the specification.

Abstract: Solid state light emitting micropixels array structures having hydrogen barrier layers to minimize or eliminate undesirable passivation of doped GaN structures due to hydrogen diffusion.

Abstract: An array substrate including a base substrate; a thin film transistor disposed on the base substrate, the thin film transistor including a gate electrode connected to a gate line; an active layer; a gate insulating layer insulating the gate electrode from the active layer; a first electrode connected to a data line; and a second electrode spaced apart from the first electrode; a micro light emitting diode disposed on a side of the gate insulating layer away from the base substrate, the micro light emitting diode including a first electrode, a light emitting layer and a second electrode; and a common electrode. The second electrode of the thin film transistor is connected to one of the first and second electrodes of the micro light emitting diode. The other of the first and second electrodes of the micro light emitting diode is connected to the common electrode.

Abstract: Provided is a technique for manufacturing a nitride semiconductor substrate with which it is possible to manufacture a nitride semiconductor substrate having sufficiently reduced dislocation density with a large area even if manufactured on an inexpensive substrate made of sapphire, etc. A nitride semiconductor substrate in which a nitride semiconductor layer formed on a substrate is formed by laminating an undoped nitride layer and a rare earth element-added nitride layer to which a rare earth element is added as a doping material, and the dislocation density is of the order of 106 cm?2 or less.

Abstract: A coated phosphors that include a shell comprising a first Mn4+ doped phosphor of formula I Ax[MFy]:Mn4+??I directly disposed on a core comprising a second phosphor. The second phosphor is a material other than a compound of formula I or formula II Ax[MFy]??II wherein A is, independently at each occurrence, Li, Na, K, Rb, Cs, or a combination thereof; M is, independently at each occurrence, Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7.

Abstract: A method of peeling a mother protective film from a mother display panel includes: laminating the mother display panel and the mother protective film, the mother display panel including a plurality of display cells each including a display area and a peripheral area around the plurality of display cell; forming a target area and a dummy area in the mother protective film by forming a cutting line in a closed loop shape enclosing the target area corresponding to each of the display cells and a first additional cutting line in a first direction near the cutting line; physically peeling off the dummy area from the mother display panel, including: primarily peeling off a portion of the mother protective film adjacent to the first additional cutting line; and secondarily peeling off rest of the mother protective film from the mother display panel along the cutting line.

Abstract: An organic EL display apparatus (100) has a plurality of pixels including red pixels (R), green pixels (G) and blue pixels (B), the apparatus (100) including: a substrate (1); a plurality of organic EL elements (10) supported on the substrate, with one organic EL element provided in each pixel; a generally lattice-shaped first bank (21) defining the pixels, the first bank including a plurality of first portions (21A) extending in a first direction and a plurality of second portions (21B) extending in a second direction that crosses the first direction; and a plurality of second banks (22) provided on a top portion (21t) of the first bank, wherein the second banks are not formed at intersections (cr) between the first portions and the second portions of the first bank, and the second banks are more liquid repellent than the first bank.

Abstract: A light-emitting device and a manufacturing method thereof are provided. The light-emitting device includes a substrate, an epitaxial blocking layer, and a light-emitting epitaxial structure. The substrate has a surface, in which the surface includes a plurality of protruding parts and a plurality of recess parts relative to the protruding parts. The epitaxial blocking layer disposed on the substrate covers the recess parts and exposes the protruding parts. The light-emitting epitaxial structure disposed on the substrate is connected to the protruding parts and is disposed above the recess parts. The light-emitting epitaxial structure is formed by using the protruding parts as a growth surface thereof so as to have a better crystalline quality.

Abstract: A group III nitride semiconductor light-emitting element comprises, in the following order: an n-type group III nitride semiconductor layer; a group III nitride semiconductor laminated body obtained by alternately laminating a barrier layer and a well layer narrower in bandgap than the barrier layer in the stated order so that the number of barrier layers and the number of well layers are both N, where N is an integer; an AlN guide layer; and a p-type group III nitride semiconductor layer. The AlN guide layer has a thickness of 0.7 nm or more and 1.7 nm or less. An Nth well layer in the group III nitride semiconductor laminated body and the AlN guide layer are in contact with each other, or a final barrier layer is further provided between the Nth well layer and the AlN guide layer.

Abstract: A new GaN single crystal is provided. A GaN single crystal according to the present embodiment comprises a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides each with a length of 2 mm or more, and, when the at least one square are is divided into a plurality of sub-areas each of which is a square of 100 ?m×100 ?m, pit-free areas account for 80% or more of the sub-areas.

Abstract: A group III nitride semiconductor light-emitting element comprises, in the following order: an n-type group III nitride semiconductor layer; a group III nitride semiconductor laminated body obtained by alternately laminating a barrier layer and a well layer narrower in bandgap than the barrier layer in the stated order so that the number of barrier layers and the number of well layers are both N, where N is an integer; an AlN guide layer; and a p-type group III nitride semiconductor layer. The AlN guide layer has a thickness of 0.7 nm or more and 1.7 nm or less. An Nth well layer in the group III nitride semiconductor laminated body and the AlN guide layer are in contact with each other, or a final barrier layer is further provided between the Nth well layer and the AlN guide layer.

Abstract: A composition having excellent dischargeability by an ink jet method and reduced clogging of an ink jet apparatus is provided. The composition contains a fluorinated alcohol A represented by the formula (1) and having a boiling point of 50° C. or more and less than 150° C., a fluorinated alcohol B represented by the formula (1) and having a boiling point of 150° C. or more and less than 300° C., and a charge transportable compound, in which the ratio rate of the fluorinated alcohol B with respect to 100 parts by mass of the sum of the fluorinated alcohol A and the fluorinated alcohol B is 10 parts by mass to 90 parts by mass: CnFH2nF+1-mFFnFOH ??(1) In formula (1), nF is an integer of 1 to 12 and mF is an integer of 1 to 25, provided that 2nF+1?mF.

Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

Abstract: A manufacturing method of a vertical GaN-based semiconductor device having: a GaN-based semiconductor substrate; a GaN-based semiconductor layer including a drift region having doping concentration of an n type impurity, which is lower than that of the GaN-based semiconductor substrate, and is provided on the GaN-based semiconductor substrate; and MIS structure having the GaN-based semiconductor layer, an insulating film contacting the GaN-based semiconductor layer, and a conductive portion contacting the insulating film, the method includes: implanting an n type dopant in a back surface of the GaN-based semiconductor substrate after forming of the MIS structure, and annealing the GaN-based semiconductor substrate after the implanting of the n type dopant.

Abstract: A method includes mixing a first fluoride phosphor powder that is doped with tetravalent manganese with a treatment solution for a designated period of time, stopping the mixing to allow the fluoride phosphor powder to settle, removing at least some liquid that has separated from the first fluoride phosphor powder, repeating (a) the mixing, (b) the stopping of the mixing, and (c) removing at least some of the liquid during one or more additional cycles, and obtaining a second fluoride phosphor powder following the repeating of the mixing, the stopping of the mixing, and the removing of at least some of the liquid. The second fluoride phosphor powder includes a reduced amount of the manganese relative to the first fluoride phosphor powder.

Abstract: A method of manufacturing a display apparatus according to some embodiments of the present disclosure includes preparing a display substrate in which at least one hole region is defined when viewed in a planar view, disposing a first adhesive film on the display substrate, etching the hole region of the display substrate by irradiating first light in the form of laser light, and peeling off the first adhesive film, wherein the first adhesive film transmits at least a portion of the first light.

Abstract: A light emitting device including a substrate, a first semiconductor layer, a mesa disposed thereon and including a second semiconductor layer and an active layer, a first contact electrode contacting the first semiconductor layer exposed around the mesa, a second contact electrode contacting the second semiconductor layer, a passivation layer covering the first contact electrode, the mesa, and the second contact electrode and having openings disposed on the first and second contact electrodes, and first and second bump electrodes electrically connected to the first and second contact electrodes through the openings, respectively, in which the mesa has indentations in plan view, the first contact electrode is spaced apart from the mesa by a predetermined distance, surrounds the mesa, and contacts the first semiconductor layer in the indentations, and each of the first and second bump electrodes covers one of the openings of the passivation layer and a portion thereof.

Abstract: Processes for producing stable Mn4+ doped phosphors include dispersing a compound of formula I in a solution comprising a compound of formula II to form a dispersion; applying pressure to the dispersion at a temperature less than 200° C. to form a phosphor product; and contacting the phosphor product with a fluorine-containing oxidizing agent in gaseous form at an elevated temperature; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7.

Abstract: An organic light-emitting diode (OLED) display panel and an OLED display device are provided. The OLED display panel comprises a first substrate; a first electrode layer disposed on the first substrate and including a plurality of first electrodes; a hole transport layer disposed on a surface of the first electrode layer far away from the first substrate, and formed by a first hole transport material and a second hole transport material having different carrier mobility; a plurality of light-emitting devices disposed on a surface of the hole transport layer far away from the first electrode layer and arranged in correspondence with the plurality of first electrodes respectively; an electron transport layer disposed on a surface of the plurality of light-emitting devices far away from the hole transport layer; and a second electrode layer disposed on a surface of the electron transport layer far away from the plurality of light-emitting devices.

Abstract: A light emitting chip package includes a light-emitting chip, a molding compound, and a redistribution wiring structure. The light-emitting chip includes an emission zone, a first electrode, and a second electrode. The molding compound covers at least a sidewall of the light-emitting chip and supports the light-emitting chip. The redistribution wring structure disposed in the molding compound includes a first interconnect wiring structure electrically connected to the first electrode and a second interconnect wiring structure electrically connected to the second electrode. The first interconnect wiring structure and the second interconnect wiring structure respectively include a first pad and a second pad, and the first pad and the second pad are located at the same side of the light emitting chip package.

Abstract: An organic EL display apparatus (100) has a plurality of pixels including red pixels (R), green pixels (G) and blue pixels (B), the apparatus (100) including: a substrate (1); a plurality of organic EL elements (10) supported on the substrate, with one organic EL element provided in each pixel; a generally lattice-shaped first bank (21) defining the pixels, the first bank including a plurality of first portions (21A) extending in a first direction and a plurality of second portions (21B) extending in a second direction that crosses the first direction; and a plurality of second banks (22) provided on a top portion (21t) of the first bank, wherein the second banks are not formed at intersections (cr) between the first portions and the second portions of the first bank, and the second banks are more liquid repellent than the first bank.

Abstract: An ultraviolet light-emitting device including a substrate, a first conductive type semiconductor layer disposed on the substrate, a mesa disposed on the first conductive type semiconductor layer and including a second conductive type semiconductor layer and an active layer disposed between the semiconductor layers, a first contact electrode contacting the exposed first conductive type semiconductor layer around the mesa, a second contact electrode contacting the second conductive type semiconductor layer on the mesa, a passivation layer covering the first contact electrode, the mesa, and the second contact electrode and having openings disposed above the first and second contact electrodes, and first and second bump electrodes electrically connected to the first and second contact electrodes through the openings of the passivation layer, in which the mesa has depressions in plan view, and the first and second bump electrodes cover the openings and a portion of the passivation layer.

Abstract: A group III nitride semiconductor light-emitting element having longer element life than conventional group III nitride semiconductor light-emitting elements and a method of manufacturing the same are provided. A group III nitride semiconductor light-emitting element 100 comprises, in the following order: an n-type group III nitride semiconductor layer 30; a group III nitride semiconductor laminated body 40 obtained by alternately laminating a barrier layer 40a and a well layer 40b narrower in bandgap than the barrier layer 40a in the stated order so that the number of barrier layers 40a and the number of well layers 40b are both N, where N is an integer; an AlN guide layer 60; and a p-type group III nitride semiconductor layer 70, wherein the AlN guide layer 60 has a thickness of 0.5 nm or more and 2.0 nm or less.

Abstract: Provided is a display apparatus. The display apparatus may include a monolithic device in which a light emitting element array, a transistor array, and a color control member are monolithically provided on one substrate. The display apparatus may include a first layered structure including the light emitting element array, a second layered structure including the transistor array, and a third layered structure including the color control member, wherein the second layered structure may be between the first layered structure and the third layered structure. The light emitting element array may include a plurality of light emitting elements comprising an inorganic material. The plurality of light emitting elements may have a vertical nanostructure.

Abstract: A method of forming a compound semiconductor substrate includes providing a crystalline base substrate having a first semiconductor material and a main surface, and forming a first semiconductor layer on the main surface and having a pair of tracks disposed on either side of active device regions. The first semiconductor layer is formed from a second semiconductor material having a different coefficient of thermal expansion than the first semiconductor material. The pair of tracks have a relatively weaker crystalline structure than the active device regions. The method further includes thermally cycling the base substrate and the first semiconductor layer such that the first semiconductor layer expands and contracts at a different rate than the base substrate. The pair of tracks physically decouple adjacent ones of the active device regions during the thermal cycling.

Abstract: A process of forming an epitaxial wafer is disclosed. The process includes steps of (a) growing an aluminum nitride (AlN) layer at a first temperature and a first flow rate of ammonia (NH3); and (b) growing a gallium nitride (GaN) layer on the AlN layer. The step (b) includes a first period and a second period. At least one of a temperature from the first temperature to a second temperature that is lower than the first temperature and a flow rate of NH3 from the first flow rate to a second flow rate different from the first flow rate is carried out during the first period. The second period grows the GaN layer at the second temperature and the second flow rate of NH3.

Abstract: An exemplary light emitting diode is provided to comprise: a first semiconductor layer; a mesa disposed on the first semiconductor layer and including an active layer and a second semiconductor layer disposed on the active layer; a ZnO transparent electrode disposed on the mesa; a first electrode disposed on the first semiconductor layer; and a second electrode disposed on the ZnO transparent electrode, and including a second electrode pad and at least one second electrode extending portion extending from the second electrode pad. The second electrode extending portion contacts the ZnO transparent electrode. The ZnO transparent electrode includes a first region and a second region. The first region protrudes from the top surface of the ZnO transparent electrode, includes a plurality of projecting portions arranged in a predetermined pattern, the thickness of the first region greater than the thickness of the second region.

Abstract: A diode laser bar assembly is formed to exhibit a relatively low thermal resistance, which also providing an increased range of conditions over which the internal stress conditions may be managed. In particular, the submount configuration of the prior art is replaced by a pair of platelets, disposed above and below the diode laser bar so as to form a “sandwich” structure. The bottom platelet is disposed between the heatsink (cooler) and the diode laser bar. Thus, the bottom platelet may be relatively thin, creating a low thermal resistance configuration. The combination of the top and bottom platelets provides the ability to create various configurations and designs that best accommodate stress conditions for a particular situation.

Abstract: Disclosed is an organic light emitting diode (OLED) display device including a substrate including a pixel region and a boundary region outside the pixel region. The pixel region comprises an area having a short side and a long side. The pixel region comprises an array of pixels to emit light. The OLED display device includes a substrate in the pixel region and in the boundary region The OLED display device further includes a first electrode of a light emitting device in the pixel region over the substrate, a first bank covering edges of the first electrode in the pixel region on the substrate in the boundary region, wherein a width of an edge of the first bank along the short side of the pixel region is different from a width of an edge of the first bank along the long side of the pixel region, and a second bank on a portion of the first bank in the boundary region.