Abstract: As one embodiment, the present invention provides a method for growing a ?-Ga2O3-based single crystal film by using HYPE method. The method includes a step of exposing a Ga2O3-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a ?-Ga2O3-based single crystal film on a principal surface of the Ga2O3-based substrate at a growth temperature of not lower than 900° C.

Abstract: A method includes forming a semiconductor structure. The structure includes a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form. The blocking material is disposed between the first material and the second material. At least the second material and the third material each comprise silicon and/or germanium. The structure is exposed to a temperature above a crystallization temperature of the third material and below a crystallization temperature of the second material. Semiconductor structures, memory devices, and systems are also disclosed.

Abstract: A III-V semiconductor layer is deposited using an apparatus comprising a process chamber, a susceptor for receiving one or more substrates to be coated, and a gas inlet element which comprises a plurality of process gas inlet zones. An etching gas inlet in the flow direction of the hydride and the MO compound opens into the process chamber downstream of the process gas inlet zones. A control device is adapted and the process gas inlet zones and the etching gas inlet are arranged such that the process gases cannot enter into the etching gas inlet during deposition of the semiconductor layer and the etching gas cannot enter into the process gas inlet zones during purification of the process chamber. The etching gas inlet is formed by an annular zone of the process chamber cover around the gas inlet element and by an annular fastening element for fastening a cover plate.

Abstract: A process for forming an antimony-doped silicon-containing layer includes: (a) depositing by chemical vapor deposition the antimony-doped silicon-containing layer above a semiconductor structure, using an antimony source gas and a silicon source gas or a combination of the silicon source gas and a germanium source gas; and (b) annealing the antimony-doped silicon-containing layer at a temperature of no greater than 800° C. The antimony source gas may include one or more of: trimethylantimony (TMSb) and triethylantimony (TESb). The silicon source gas comprises one or more of: silane, disilane, trichlorosilane, (TCS), dichlorosilane (DCS), monochlorosilane (MCS), methylsilane, and silicon tetrachloride. The germanium source gas comprises germane.

Abstract: A photodetector includes a substrate, at least one nanowire and a cladding layer. The at least one nanowire is disposed on the substrate and has a semiconductor core. The cladding layer is disposed on sidewalls of the semiconductor core and includes an epitaxial semiconductor film in contact with the sidewalls of the semiconductor core, a metal film disposed on the outside of the epitaxial semiconductor film and a high-k material layer disposed on the outside of metal film.

Abstract: The present disclosure discloses an organic light emitting diode package structure and its method of manufacturing, and a display device. The method of manufacturing includes: preparing an inorganic substrate comprising a hydroxyl group; preparing a first atomic transition layer on the inorganic substrate; coating a first organic layer on the first atomic transition layer, the first organic layer is formed by mixing two epoxy resin monomers; and curing the first organic layer so that the first organic layer is chemically bonded to the inorganic substrate through the first atomic transition layer. In the above manner, the present disclosure can increase the adhesion between the organic layer and the inorganic layer and prevent the display device from package failure caused by peeling between the package layers during bending or folding.

Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably selected to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layers after deposition by ALD. In preferred embodiments a silicon substrate is overlaid with an AIN nucleation layer and laser annealed. Thereafter a GaN device layers is applied over the AIN layer by an ALD process and then laser annealed. In a further example embodiment a transition layer is applied between the GaN device layer and the AIN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-x compound wherein the composition of the transition layer is continuously varied from AIN to GaN.

Abstract: A semiconductor device, in which, in a density distribution of first conductivity type impurities in the first conductivity type region measured along a thickness direction of the semiconductor substrate, a local maximum value N1, a local minimum value N2, a local maximum value N3, and a density N4 are formed in this order from front surface side, a relationship of N1>N3>N2>N4 is satisfied, a relationship of N3/10>N2 is satisfied, and a distance “a” from the surface to the depth having the local maximum value N1 is larger than twice a distance “b” from the depth having the local maximum value N1 to the depth having the local minimum N2.

Abstract: An annealing apparatus includes: a temperature-gradient preheating unit, configured for performing a gradient-preheating process for a substrate that is to be annealed by using a gradient temperature; a high temperature heating unit, configured for performing a high temperature heating process for the preheated substrate; and a shifting device, configured for transporting the substrate from the temperature-gradient preheating unit to the high temperature heating unit when and/or after the substrate is subjected to the gradient-preheating process. The annealing apparatus adopts a gradient heating method to perform a preheating treatment for the substrate, so the annealing efficiency is increased. An annealing process that uses the annealing apparatus is further provided.

Abstract: Disclosed is a method of manufacturing a thin film, the method including: growing an epitaxial layer on a surface of a wafer at a growth temperature, wherein the growing of the epitaxial layer comprises controlling a defect present on a surface of the wafer. Also, disclosed is a wafer including: a substrate; and an epitaxial layer located on the substrate, wherein a basal dislocation density of the epitaxial layer is equal to or less than 1/cm2.

Abstract: A layer of a silicon germanium alloy containing 30 atomic percent or greater germanium and containing substitutional carbon is grown on a surface of a semiconductor layer. The presence of the substitutional carbon in the layer of silicon germanium alloy compensates the strain of the silicon germanium alloy, and suppresses defect formation. Placeholder semiconductor fins are then formed to a desired dimension within the layer of silicon germanium alloy and the semiconductor layer. The placeholder semiconductor fins will relax for the most part, while maintaining strain in a lengthwise direction. An anneal is then performed which may either remove the substitutional carbon from each placeholder semiconductor fin or move the substitutional carbon into interstitial sites within the lattice of the silicon germanium alloy. Free-standing permanent semiconductor fins containing 30 atomic percent or greater germanium, and strain in the lengthwise direction are provided.

Abstract: The invention relates to a method for forming a graphene layer (105) on the surface of a substrate (100) including a silicon layer (101), the method comprising the consecutive steps of: forming (1) a silicon-carbide film (103) on a free surface of the silicon layer and gradually heating the substrate until the silicon of at least the first row of atoms of the silicon-carbide film is sublimated so as to form the graphene layer on the silicon-carbide film. According to the invention, a silicon layer, the free surface of which is stepped, is used.

Abstract: A technique for forming nanostructures including introducing a plurality of molecular-size scale and/or nanoscale building blocks to a region near a substrate and simultaneously scanning a pattern on the substrate with an energy beam, wherein the energy beam causes a change in at least one physical property of at least a portion of the building blocks, such that a probability of the portion of the building blocks adhering to the pattern scanned by the energy beam is increased, and wherein the building blocks adhere to the pattern to form the structure. The energy beam and at least a portion of the building blocks may interact by electrostatic interaction to form the structure.

Abstract: A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness.

Abstract: Bulk III-nitride semiconductor materials are deposited in an HPVE process using a metal trichloride precursor on a metal nitride template layer of a growth substrate. Deposition of the bulk III-nitride semiconductor material may be performed without ex situ formation of the template layer using a MOCVD process. In some embodiments, a nucleation template layer is formed ex situ using a non-MOCVD process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process. In additional embodiments, a nucleation template layer is formed in situ using an MOCVD process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process. In further embodiments, a nucleation template layer is formed in situ using an HVPE process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process.

Abstract: A layer is deposited onto a semiconductor wafer by CVD in a process chamber having upper and lower covers, wherein the wafer front side temperature is measured; the wafer is heated to deposition temperature; the temperature of the upper process chamber cover is controlled to a target temperature by measuring the temperature of the center of the outer surface of the upper cover as the value of a controlled variable of an upper cover temperature control loop; a gas flow rate of process gas for depositing the layer is set; and a layer is deposited on the heated wafer front side during control of the upper cover temperature to the target temperature. A process chamber suitable therefor has a sensor for measuring the upper cover outer surface center temperature and a controller for controlling this temperature to a predetermined value.

Abstract: Methods and structures for GaN on silicon-containing substrates are disclosed, comprising a texturing process to generate a rough surface containing (111) surface, which then can act as an underlayer for epitaxial GaN. LED devices are then fabricated on the GaN layer. Variations of the present invention include different orientations of silicon layer instead of (100), such as (110) or others; and other semiconductor materials instead of GaN, such as other semiconductor materials suitable for LED devices.

Abstract: A substrate with two SiGe regions having different Germanium concentrations and a method for making the same. The method includes: providing a substrate with at least two active regions; epitaxially depositing a first SiGe layer over each active regions; epitaxially depositing a Silicon layer over each SiGe layer; epitaxially depositing a second SiGe layer over each Silicon layer; forming a hard mask over the second SiGe layer of one of the active regions; removing the epitaxially deposited second SiGe layer of the unmasked active region, removing the hard mask, and thermally mixing the remaining Silicon and SiGe layers of the active regions to form a new SiGe layer with uniform Germanium concentration for each of the active regions, where the new SiGe layer with uniform Germanium concentration of one of the at least two active regions has a different concentration of Germanium than the new SiGe layer with uniform Germanium concentration of the other SiGe layer.

Abstract: A method can include: growing a Ge layer on a Si substrate; growing a low-temperature nucleation GaAs layer, a high-temperature GaAs layer, a semi-insulating InGaP layer and a GaAs cap layer sequentially on the Ge layer after a first annealing, forming a sample; polishing the sample's GaAs cap layer, and growing an nMOSFET structure after a second annealing on the sample; performing selective ICP etching on a surface of the nMOSFET structure to form a groove, and growing a SiO2 layer in the groove and the surface of the nMOSFET structure using PECVD; performing the ICP etching again to etch the SiO2 layer till the Ge layer, forming a trench; cleaning the sample and growing a Ge nucleation layer and a Ge top layer in the trench by UHVCVD; polishing the Ge top layer and removing a part of the SiO2 layer on the nMOSFET structure; performing a CMOS process.

Abstract: Embodiments of the present invention generally relate to methods for forming a SiGe layer. In one embodiment, a seed SiGe layer is first formed using plasma enhanced chemical vapor deposition (PECVD), and a bulk SiGe layer is formed directly on the PECVD seed layer also using PECVD. The processing temperature for both seed and bulk SiGe layers is less than 450 degrees Celsius.

Abstract: A layer of a silicon germanium alloy containing 30 atomic percent or greater germanium and containing substitutional carbon is grown on a surface of a semiconductor layer. The presence of the substitutional carbon in the layer of silicon germanium alloy compensates the strain of the silicon germanium alloy, and suppresses defect formation. Placeholder semiconductor fins are then formed to a desired dimension within the layer of silicon germanium alloy and the semiconductor layer. The placeholder semiconductor fins will relax for the most part, while maintaining strain in a lengthwise direction. An anneal is then performed which may either remove the substitutional carbon from each placeholder semiconductor fin or move the substitutional carbon into interstitial sites within the lattice of the silicon germanium alloy. Free-standing permanent semiconductor fins containing 30 atomic percent or greater germanium, and strain in the lengthwise direction are provided.

Abstract: A manufacturing apparatus and a manufacturing method for a quantum dot material. The manufacturing apparatus adds an optical device capable of generating an interference pattern in an existing epitaxial apparatus, so that a substrate applies an interference pattern on an epitaxial layer while performing epitaxial growth. By means of the interference pattern, a regularly distributed temperature field is formed on the epitaxial layer, so that on the epitaxial layer, an atom aggregation phenomenon is formed at dot positions with higher temperature, but no atoms are aggregated on areas having relatively lower temperature. Therefore, according to the temperature distribution on the surface of the epitaxial layer, positions where quantum dots generate can be controlled manually without introducing defects, thereby achieving a defect-free and long-range ordered quantum dot manufacturing.

Abstract: Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal.

Abstract: Methods for depositing a material, such as a metal or a transition metal oxide, using an ALD (atomic layer deposition) process and resulting structures are disclosed. Such methods include treating a surface of a semiconductor structure periodically throughout the ALD process to regenerate a blocking material or to coat a blocking material that enables selective deposition of the material on a surface of a substrate. The surface treatment may reactivate a surface of the substrate toward the blocking material, may restore the blocking material after degradation occurs during the ALD process, and/or may coat the blocking material to prevent further degradation during the ALD process. For example, the surface treatment may be applied after performing one or more ALD cycles. Accordingly, the presently disclosed methods enable in situ restoration of blocking materials in ALD process that are generally incompatible with the blocking material and also enables selective deposition in recessed structures.

Abstract: A technique for forming nanostructures including a definition of a charge pattern on a substrate and introduction of charged molecular scale sized building blocks (MSSBBs) to a region proximate the charge pattern so that the MSSBBs adhere to the charge pattern to form the feature.

Abstract: According to one embodiment, an impurity analysis method comprises performing vapor-phase decomposition on a silicon-containing film formed on a substrate, heating the substrate at a first temperature after vapor phase decomposition, heating the substrate at a second temperature higher than the first temperature after heating at the first temperature, to remove a silicon compound deposited on the surface of the silicon-containing film, dropping a recovery solution onto the substrate surface after heating at the second temperature and moving the substrate surface, to recover metal into the recovery solution, and drying the recovery solution, to perform X-ray fluorescence spectrometry on a dried mark.

Abstract: A patterned substrate is provided having at least two mesa surface portions, and a recessed surface located beneath and positioned between the at least two mesa surface portions. A Group III nitride material is grown atop the mesa surface portions of the patterned substrate and atop the recessed surface. Growth of the Group III nitride material is continued merging the Group III nitride material that is grown atop the mesa surface portions. When the Group III nitride material located atop the mesa surface portions merge, the Group III nitride material growth on the recessed surface ceases. The merged Group III nitride material forms a first Group III nitride material structure, and the Group III nitride material formed in the recessed surface forms a second material structure. The first and second material structures are disjoined from each other and are separated by an air gap.

Abstract: A semiconductor device manufacturing apparatus includes a chamber in which a wafer is loaded; a first gas supply unit for supplying a process gas into the chamber; a gas exhaust unit for exhausting a gas from the chamber; a wafer support member on which the wafer is placed; a ring on which the wafer support member is placed; a rotation drive control unit connected to the ring to rotate the wafer; a heater disposed in the ring and comprising a heater element for heating the wafer to a predetermined temperature and including an SiC layer on at least a surface, and a heater electrode portion molded integrally with a heater element and including an SiC layer on at least a surface; and a second gas supply unit for supplying an SiC source gas into the ring.

Abstract: A method of selectively forming a germanium structure within semiconductor manufacturing processes removes the native oxide from a nitride surface in a chemical oxide removal (COR) process and then exposes the heated nitride and oxide surface to a heated germanium containing gas to selectively form germanium only on the nitride surface but not the oxide surface.

Abstract: There is provided a semiconductor wafer including a base wafer whose surface is entirely or partially a silicon crystal plane, an inhibitor positioned on the base wafer to inhibit crystal growth and having an opening that reaches the silicon crystal plane, a first crystal layer made of SixGe1-x (0?x<1) and positioned on the silicon crystal plane that is exposed in the opening, a second crystal layer positioned on the first crystal layer and made of a III-V Group compound semiconductor that has a band gap width larger than a band gap width of the first crystal layer, and a pair of metal layers positioned on the inhibitor and the second crystal layer. The pair of the metal layers are each in contact with the first crystal layer and the second crystal layer.

Abstract: The embodiments of mechanisms for forming source/drain (S/D) regions of field effect transistors (FETs) descried enable forming an epitaxially grown silicon-containing material without using GeH4 in an etch gas mixture of an etch process for a cyclic deposition/etch (CDE) process. The etch process is performed at a temperature different form the deposition process to make the etch gas more efficient. As a result, the etch time is reduced and the throughput is increased.

Abstract: An object of the present invention is to perform temperature setting of a heating plate so that a wafer is uniformly heated in an actual heat processing time. The temperature of a wafer is measured during a heat processing period from immediately after a temperature measuring wafer is mounted on the heating plate to the time when the actual heat processing time elapses. Whether the uniformity in temperature within the wafer is allowable or not is determined from the temperature of the wafer in the heat processing period, and if the determination result is negative, a correction value for a temperature setting parameter of the heating plate is calculated using a correction value calculation model from the measurement result, and the temperature setting parameter is changed.

Abstract: In one aspect, methods of forming mixed metal thin films comprising at least two different metals are provided. In some embodiments, a mixed metal oxide thin film is formed by atomic layer deposition and subsequently reduced to a mixed metal thin film. Reduction may take place, for example, in a hydrogen atmosphere. The presence of two or more metals in the mixed metal oxide allows for reduction at a lower reduction temperature than the reduction temperature of the individual oxides of the metals in the mixed metal oxide film.

Abstract: A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25-0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency.

Abstract: A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25?0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency.

Abstract: A manufacturing apparatus and a manufacturing method for a quantum dot material. The manufacturing apparatus adds an optical device capable of generating an interference pattern in an existing epitaxial apparatus, so that a substrate applies an interference pattern on an epitaxial layer while performing epitaxial growth. By means of the interference pattern, a regularly distributed temperature field is formed on the epitaxial layer, so that on the epitaxial layer, an atom aggregation phenomenon is formed at dot positions with higher temperature, but no atoms are aggregated on areas having relatively lower temperature. Therefore, according to the temperature distribution on the surface of the epitaxial layer, positions where quantum dots generate can be controlled manually without introducing defects, thereby achieving a defect-free and long-range ordered quantum dot manufacturing.

Abstract: Disclosed is a method of manufacturing a thin film, the method including: growing an epitaxial layer on a surface of a wafer at a growth temperature, wherein the growing of the epitaxial layer comprises controlling a defect present on a surface of the wafer. Also, disclosed is a wafer including: a substrate; and an epitaxial layer located on the substrate, wherein a basal dislocation density of the epitaxial layer is equal to or less than 1/cm2.

Abstract: A manufacturing method of MIS (Metal Insulator Semiconductor)-type semiconductor device includes the steps of; forming a zirconium oxynitride (ZrON) layer; forming an electrode layer containing titanium nitride (TiN) on the zirconium oxynitride (ZrON) layer; and heating the electrode layer.

Abstract: A unique and cost-effective method for producing a multilayer ceramic structure by using a first green film that contains a ceramic material, and the multilayer ceramic structure produced thereby. The method including the steps of: (a) producing at least one porous region in the first green film, the at least one porous region extending from the surface of the first green film; (b) applying a first layer, in sections, to the surface of the first green film, wherein one section of the first layer is located above the at least one porous region produced in step (a); (c) positioning at least one additional green film on the surface of the first green film, to which the first layer has been applied; (d) laminating the first green film and the at least one additional green film to form a green film composite; and (e) sintering the green film composite.

Abstract: The invention relates to a device for depositing semiconductor layers, comprising a process chamber (1) arranged substantially rotationally symmetrically about a center (11), a susceptor (2), a process chamber ceiling (3), a gas inlet element (4) having gas inlet chambers (8, 9, 10) that are arranged vertically on top of each other, and a heater (27) arranged below the susceptor (2), wherein the topmost (8) of the gas inlet chambers is directly adjacent to the process chamber ceiling (3) and is connected to a feed line (14) for feeding a hydride together with a carrier gas into the process chamber (1), wherein the lowest (10) of the gas inlet chambers is directly adjacent to the susceptor (2) and is connected to a feed line (16) for feeding a hydride together with a carrier gas into the process chamber (1), wherein at least one center gas inlet chamber (9) arranged between the lowest (10) and the topmost (8) gas inlet chamber is connected to a feed line (15) for feeding an organometallic compound into the pro

Abstract: There are provided a process for producing a semiconductor device and a semiconductor device which allow conductivity distribution to be formed without making refractive index distributed even in a material system of a semiconductor difficult to be subjected to ion implantation. The process for producing a semiconductor device includes the steps of forming a semiconductor layer containing a dopant; forming a concave and convex structure on the semiconductor layer by partially removing the semiconductor layer; and forming a conductivity distribution reflecting the concave and convex structure in the semiconductor layer by performing heat treatment on the semiconductor layer in which the concave and convex structure has been formed at a temperature at which a material forming the semiconductor layer causes mass transport and filling up a hole of a concave portion of the concave and convex structure with the material forming the semiconductor layer.

Abstract: The invention provides a manufacturing method of a graphene-on-insulator substrate which is mass productive, of high quality, and yet is directly usable for manufacture of semiconductor devices at a low manufacturing cost. According to the manufacturing method of a graphene substrate of the invention, a metal layer and a carbide layer are heated with the metal layer in contact with the carbide layer so that carbon in the carbide layer is dissolved into the metal layer, and then the metal layer and the carbide layer are cooled so that the carbon in the metal layer is segregated as graphene on the surface of the carbide layer.

Abstract: In the frame of manufacturing a photovoltaic cell a layer (3) of silicon compound is deposited on a structure (1). The yet uncovered surface (3a) is treated in a predetermined oxygen (O2) containing atmosphere which additionally contains a dopant (D). Thereby, the silicon compound layer is oxidized and doped in a thin surface area (5).

Abstract: This invention relates to a method for depositing silicon carbide material onto a substrate such that the resulting substrate has a carrier lifetime of 0.5-1000 microseconds, the method comprising a. introducing a gas mixture comprising a chlorosilane gas, a carbon-containing gas, and hydrogen gas into a reaction chamber containing a substrate; and b. heating the substrate to a temperature of greater than 1000° C. but less than 2000° C.; with the proviso that the pressure within the reaction chamber is maintained in the range of 0.1 to 760 torr. This invention also relates to a method for depositing silicon carbide material onto a substrate such that the resulting substrate has a carrier lifetime of 0.5-1000 microseconds, the method comprising a. introducing a gas mixture comprising a non-chlorinated silicon-containing gas, hydrogen chloride, a carbon-containing gas, and hydrogen gas into a reaction chamber containing a substrate; and b. heating the substrate to a temperature of greater than 1000° C.

Abstract: A method of making a colloidal solution of high confinement semiconductor nanocrystals includes: forming a first solution by combining a solvent, growth ligands, and at most one semiconductor precursor; heating the first solution to the nucleation temperature; and adding to the first solution, a second solution having a solvent, growth ligands, and at least one additional and different precursor than that in the first solution to form a crude solution of nanocrystals having a compact homogenous semiconductor region. The method further includes: waiting 0.5 to 20 seconds and adding to the crude solution a third solution having a solvent, growth ligands, and at least one additional and different precursor than those in the first and second solutions; and lowering the growth temperature to enable the formation of a gradient alloy region around the compact homogenous semiconductor region, resulting in the formation of a colloidal solution of high confinement semiconductor nanocrystals.

Abstract: A method for manufacturing a Group III nitride semiconductor of the present invention includes a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga element-containing target are disposed, wherein said sputtering step includes respective substeps of: a first sputtering step of performing a film formation of the Group III nitride semiconductor while setting the temperature of the substrate to a temperature T1; and a second sputtering step of continuing the film formation of the Group III nitride semiconductor while lowering the temperature of the substrate to a temperature T2 which is lower than the temperature T1.

Abstract: A method for fabricating an integrated circuit (IC) includes initial oxidizing of a semiconductor surface of a substrate. The substrate is heated after the initial oxidizing using a plurality of furnace processing steps which each include a peak processing temperature between 800° C. and 1300° C. The furnace processing steps include at least one accelerated processing step having an accelerated ramp portion in a temperature range between 800° C. and 1250° C. providing an accelerated ramp-up rate and/or an |accelerated ramp-down rate| of at least (?) 5.5° C./min.

Abstract: The present invention provides a silicon carbide semiconductor device having an ohmic electrode improved in adhesion of a wire thereto by preventing deposition of carbon so as not to form a Schottky contact, as well as a method for manufacturing such a silicon carbide semiconductor device. In the SiC semiconductor device, upon forming the ohmic electrode, a first metal layer made of one first metallic element is formed on one main surface of a SiC layer. Further, a Si layer made of Si is formed on an opposite surface of the first metal layer to its surface facing the SiC layer. The stacked structure thus formed is subjected to thermal treatment. In this way, there can be obtained a silicon carbide semiconductor device having an ohmic electrode adhered well to a wire by preventing deposition of carbon atoms on the surface layer of the electrode and formation of a Schottky contact resulting from Si and SiC.

Abstract: A semiconductor device comprises a substrate comprising a major surface; a p-type Field Effect Transistor (pFET) comprising: a P-gate stack over the major surface, a P-strained region in the substrate adjacent to one side of the P-gate stack, wherein a lattice constant of the P-strained region is different from a lattice constant of the substrate, wherein the P-strained region has a first top surface higher than the major surface; and a P-silicide region on the P-strained region; and an n-type Field Effect Transistor (nFET) comprising: an N-gate stack over the major surface, an N-strained region in the substrate adjacent to one side of the N-gate stack, wherein a lattice constant of the N-strained region is different from a lattice constant of the substrate, wherein the N-strained region has a second top surface lower than the major surface and a N-silicide region on the N-strained region.

Abstract: Techniques for crack-free growth of GaN, and related, films on larger-size substrates via spatially confined epitaxy are described.