Abstract: Method for manufacturing a semiconductor device includes the steps of forming a lower electrode pattern on a substrate, forming a first interlayer insulating layer on the lower electrode pattern, forming an upper electrode pattern on the first interlayer insulating layer, forming a second interlayer insulating layer on the upper electrode pattern, forming an etch blocking layer on a side of the upper electrode pattern, wherein the etch blocking layer passes through the first interlayer insulating layer, forming a cavity which exposes the side of the etch blocking layer by etching the second interlayer insulating layer, and forming a contact ball in the cavity.

Abstract: A method of avoiding stiction during vapor hydrofluoride (VHF) release of a microelectromechanical system (MEMS) or nanoelectromechanical system (NEMS) composed of a mechanical device and a substrate is described. A silicon nitride layer is provided between the substrate and a sacrificial oxide layer and/or between a device layer and the sacrificial oxide layer, and/or on a side of the device layer facing away from the sacrificial oxide layer, and converted to thicker ammonium hexafluorosilicate with VHF while simultaneously removing a portion of the sacrificial oxide. The ammonium hexafluorosilicate acts as a temporary support, shim, wedge, or tether which limits device movement during fabrication and is later removed by sublimation under heat and/or reduced pressure.

Abstract: A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface of the first substrate is connected to the top surface of the second substrate by an anchor, such that the anchor does not extend through either the bottom surface of the first substrate or the top surface of the second substrate. The MEMS structure may include a bonding layer in contact with the bottom surface of the first substrate, and shaped to at least partially envelop the anchor.

Abstract: A process for producing a metamaterial excellent in productivity is provided. The present invention relates to a process for producing a metamaterial including an electromagnetic wave resonator resonating with an electromagnetic wave, the process including: vapor-depositing a material which can form the electromagnetic wave resonator to a support having a shape corresponding to a shape of the electromagnetic wave resonator to thereby arrange the electromagnetic wave resonator on the support.

Abstract: Interconnects for semiconductors formed of materials that exhibit crystallographic anisotropy of the resistivity size effect such that line resistivity in one crystallographic orientation becomes lower than the resistivity in the other directions and methods of fabrication and use thereof are described. A wire having a dimension that results in an increase in the electrical resistivity of the wire can be formed of a material with a conductive anisotropy due to crystallographic orientation relative to the direction of current flow that minimizes the increase in the electrical resistivity as compared to the other orientations at that dimension.

Abstract: A radio circuit includes an adjustable RF front-end module on an IC die, a liquid MEMS component on a board, and a processing module on the IC die. The adjustable RF front-end module adjusts processing of an inbound or an outbound RF signal based on a compensation control signal. The liquid MEMS component changes an operational characteristic as temperature of the radio circuit varies. The processing module generates the compensation signal based on the changing of the operational characteristic of the liquid MEMS component. The liquid MEMS component includes a channel within the board, a liquid droplet contained within the channel, and one or more conductive elements proximal to the channel.

Abstract: A MEMS device, such as an accelerometer or gyroscope, fabricated in interconnect metallization compatible with a CMOS microelectronic device. In embodiments, a proof mass has a first body region utilizing a thick metal layer that is separated from a thin metal layer. The thick metal layer has a film thickness that is significantly greater than that of the thin metal layer for increased mass. The proof mass further includes a first sensing structure comprising the thin metal layer, but lacking the thick metal layer for small feature sizes and increased capacitive coupling to a surrounding fame that includes a second sensing structure comprising the thin metal layer, but also lacking the thick metal layer. In further embodiments, the frame is released and includes regions with the thick metal layer to better match film stress-induced static deflection of the proof mass.

Abstract: A manufacturing method for a cap, for a hybrid vertically integrated component having a MEMS component a relatively large cavern volume having a low cavern internal pressure, and a reliable overload protection for the micromechanical structure of the MEMS component. A cap structure is produced in a flat cap substrate in a multistep anisotropic etching, and includes at least one mounting frame having at least one mounting surface and a stop structure, on the cap inner side, having at least one stop surface, the surface of the cap substrate being masked for the multistep anisotropic etching with at least two masking layers made of different materials, and the layouts of the masking layers and the number and duration of the etching steps being selected so that the mounting surface, the stop surface, and the cap inner side are situated at different surface levels of the cap structure.

Abstract: A semiconductor sensor device has a pressure sensing die and at least one other die mounted on a substrate, and electrical interconnections that interconnect the pressure sensing die and the at least one other die. An active region of the pressure sensing die is covered with a pressure sensitive gel material, and a cap having a cavity is mounted over the pressure sensing die such that the pressure sensing die is positioned within the cavity. The cap has a side vent hole that exposes the gel covered active region of the pressure sensing die to ambient atmospheric pressure outside the sensor device. Molding compound on an upper surface of the substrate encapsulates the at least one other die and at least a portion of the cap.

Abstract: A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the polysilicon layer is exposed to a pressure level of the first cavity. A cap wafer is bonded to a second surface of the MEMS wafer opposite the first surface of the MEMS wafer. The bonding the cap wafer creates a second cavity comprising the second portion of the polysilicon layer and a third cavity. A second surface of the first portion of the polysilicon layer is exposed to a pressure level of the third cavity. The first cavity or the third cavity is exposed to an ambient environment.

Abstract: A nanoprinthead including an array of nanotip cantilevers, where each nanotip cantilever includes a nanotip at an end of a cantilever, and a method for forming the nanoprinthead. Each nanotip may be individually addressable through use of an array of piezoelectric actuators. Embodiments for forming a nanoprinthead including an array of nanotip cantilevers can include an etching process from a material such as a silicon wafer, or the formation of a metal or dielectric nanotip cantilever over a substrate. The nanoprinthead may operate to provide uses for technologies such as dip-pen nanolithography, nanomachining, and nanoscratching, among others.

Abstract: A micromechanical component is described having a substrate which has at least one stator electrode fixedly mounted with respect to the substrate, a movable mass having at least one actuator electrode fixedly mounted with respect to the movable mass, and at least one spring via which the movable mass is displaceable. The movable mass is structured from the substrate with the aid of at least one separating trench, at least one outer stator electrode spans at least one section of the at least one separating trench and/or of the movable mass, the at least one actuator electrode protrudes between the at least one outer stator electrode and the substrate, and at least one inner stator electrode protrudes between the at least one actuator electrode and the substrate. A related manufacturing method is also described for a micromechanical component.

Abstract: A method is described for manufacturing a micromechanical structure, in which a structured surface is created in a substrate by an etching method in a first method step, and residues are at least partially removed from the structured surface in a second method step. In the second method step, an ambient pressure for the substrate which is lower than 60 Pa is set and a substrate temperature which is higher than 150° C. is set.

Abstract: Provided are a capacitive transducer that can make a sealing film thickness necessary to seal a gap smaller and can enhance performance such as a wider bandwidth, and a method of manufacturing the capacitive transducer. The capacitive transducer including cells each including a vibration film including a second electrode that is provided with a gap from a first electrode can be manufactured in the following manufacturing method. A convex part is formed on the first electrode, a sacrifice layer having a thickness larger than the thickness of the convex part is formed on the first electrode and the convex part, and a membrane is formed on the sacrifice layer. Further, an etching hole is formed in the membrane at a position above the convex part, the sacrifice layer is etched through the etching hole, and the etching hole is sealed by a sealing layer.

Abstract: A method entails providing a substrate with a structural layer having a thickness. A partial etch process is performed at locations on the structural layer so that a portion of the structural layer remains at the locations. An oxidation process is performed at the locations which consumes the remaining portion of the structural layer and forms an oxide having a thickness that is similar to the thickness of the structural layer. The oxide electrically isolates microstructures in the structural layer, thus producing a structure. A device substrate is coupled to the structure such that a cavity is formed between them. An active region is formed in the device substrate. A short etch process can be performed to expose the microstructures from an overlying oxide layer.

Abstract: An embodiment of the invention provides a chip package, which includes: a substrate having an upper surface and a lower surface; a passivation layer located overlying the upper surface of the substrate; a plurality of conducting pad structures disposed overlying the upper surface of the substrate, wherein at least portions of upper surfaces of the conducting pad structures are exposed; a plurality of openings extending from the upper surface towards the lower surface of the substrate; and a plurality of movable bulks located between the openings and connected with the substrate, respectively, wherein each of the movable bulks is electrically connected to one of the conducting pad structures.

Abstract: In a method for producing a micro-electromechanical device in a material substrate, a component element defining the position of an electronic component and/or required for the function of the electronic component is selectively formed on the material substrate from an etching stop material acting as an etching stop in case of etching of the material substrate and/or in case of etching of a material layer disposed on the material substrate. When the component element of the electronic component is implemented, a bounding region is also formed on the material substrate along at least a partial section of an edge of the surface structure, wherein the bounding region bounds the partial section. The material substrate thus implemented is selectively etched for forming the surface structure, in that the edge of the bounding region defines the position of the surface structure to be implemented on the material substrate.

Abstract: The present disclosure relates to a method of forming a plurality of MEMs device having a plurality of cavities with different pressures on a wafer package system, and an associated apparatus. In some embodiments, the method is performed by providing a work-piece having a plurality of microelectromechanical system (MEMs) devices. A cap wafer is bonded onto the work-piece in a first ambient environment having a first pressure. The bonding forms a plurality of cavities abutting the plurality of MEMs devices, which are held at the first pressure. One or more openings are formed in one or more of the plurality of cavities leading to a gas flow path that could be held at a pressure level different from the first pressure. The one or more openings in the one or more of the plurality of cavities are then sealed in a different ambient environment having a different pressure, thereby causing the one or more of the plurality of cavities to be held at the different pressure.

Abstract: Disclosed herein are a microelectromechanical systems (MEMS) microphone with a dual-back plate, and a method of manufacturing the same. The MEMS microphone according to an exemplary embodiment of the present invention includes: a substrate having a first back plate formed at a central portion thereof; a membrane plate disposed on first support parts formed at both sides on the substrate and vibrated depending on external sound pressure; and a second back plate disposed on second support parts formed at both sides of the membrane plate.

Abstract: A method for producing a device including plural cavities defined between a substrate in at least one given semiconductor material and a membrane resting on a top of insulating posts projecting from the substrate, the method allowing a height of the cavity or cavities to be adapted independently of a height of the insulating posts and allowing cavities of different heights to be formed.

Abstract: A method for manufacturing a micromechanical sensor unit, the micromechanical sensor unit including a substrate and a sealing cap, in the first method step the substrate and the sealing cap being configured and joined in such a way that, as a result of bonding the sealing cap and the substrate, a first cavity, which has a first pressure and in which a first sensor element is situated, and a second cavity, which has a second pressure and in which a second sensor element is situated, are manufactured, in a second method step a sealable channel leading into the first cavity being created, in a third method step the first pressure in the first cavity being established via the sealable channel.

Abstract: An electrode system for a micromechanical component, including: at least one first functional layer including electrodes formed therein, at least one second functional layer, and at least one third functional layer, the third functional layer being usable as an electrical printed conductor, the third functional layer being at least sectionally completely free of oxide material.

Abstract: A method of fabricating a sensor device includes forming a plurality of sensor structures on a wafer, covering the plurality of sensor structures with a polymer layer, and dicing the wafer into a plurality of die while each sensor structure remains covered by the polymer layer.

Abstract: A process for encapsulating a microelectronic device, comprising the following steps: make the microelectronic device on a first substrate; make one portion of a first material not permeable to the ambient atmosphere and permeable to a noble gas in a second substrate comprising a second material not permeable to the ambient atmosphere and the noble gas; secure the second substrate to the first substrate, forming at least one cavity inside which the microelectronic device is encapsulated such that said portion of the first material forms part of a wall of the cavity; inject the noble gas into the cavity through the portion of the first material; hermetically seal the cavity towards the ambient atmosphere and the noble gas.

Abstract: A tactile sensing matrix includes a substrate, a first plurality of elongated electrode structures, a plurality of vertically aligned piezoelectric members, an insulating layer infused into the piezoelectric members and a second plurality of elongated electrode structures. The first plurality of elongated electrode structures is disposed on the substrate along a first orientation. The vertically aligned piezoelectric members is disposed on the first plurality of elongated electrode structures and form a matrix having columns of piezoelectric members disposed along the first orientation and rows of piezoelectric members disposed along a second orientation that is transverse to the first orientation. The second plurality of elongated electrode structures is disposed on the insulating layer along the second orientation. The elongated electrode structures form a Schottky contact with the piezoelectric members. When pressure is applied to the piezoelectric members, current flow therethrough is modulated.

Abstract: According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.

Abstract: A transparent force sensor for use in touch panel displays (touch screens) and method for fabricating the same are disclosed. The transparent force sensor is capable of detecting touch by measuring local pressure applied by a touch input to a display area of the touch screen.

Abstract: Embodiments of the present disclosure are related to MEMS devices having a suspended membrane that are secured to and spaced apart from a substrate with a sealed cavity therebetween. The membrane includes openings with sidewalls that are closed by a dielectric material. In various embodiments, the cavity between the membrane and the substrate is formed by removing a sacrificial layer through the openings. In one or more embodiments, the openings in the membrane are closed by depositing the dielectric material on the sidewalls of the openings and the upper surface of the membrane.

Abstract: Methods for forming an enclosed liquid metal (LM) drop inside a sealed cavity by formation of LM components as solid LM component layers and reaction of the solid LM component layers to form the LM drop. In some embodiments, the cavity has boundaries defined by layers or features of a microelectronics (e.g. VLSI-CMOS) or MEMS technology. In such embodiments, the methods comprise implementing an initial microelectronics or MEMS process to form the layers or features and the cavity, sequential or side by side formation of solid LM component layers in the cavity, sealing of the cavity to provide a closed space and reaction of the solid LM components to form a LM alloy in the general shape of a drop. In some embodiments, nanometric reaction barriers may be inserted between the solid LM component layers to lower the LM eutectic formation temperature.

Abstract: The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by depositing a gettering material on a roughened substrate surface, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having residual gases. One or more cavities are formed in the substrate at locations between bonding areas on a top surface of the substrate. Respective cavities have roughened interior surfaces that vary in a plurality of directions. A getter layer is deposited into the one or more cavities. The roughened interior surfaces of the one or more cavities enable the substrate to more effectively absorb the residual gases, thereby increasing the efficiency of the gettering process.

Abstract: A device (20) includes sensors (30, 32, 34) that sense different physical stimuli. Fabrication (90) entails forming (92) a device structure (22) to include the sensors and coupling (150) a cap structure (24) with the device structure so that the sensors are interposed between the cap structure and a substrate layer (28) of the device structure. Fabrication (90) further entails forming ports (38, 40) in the substrate layer (28) such that one port (38) exposes a sense element (44) of the sensor (30) to an external environment (72), and another port (40) temporarily exposes the sensor (34) to the external environment. A seal structure (26) is attached to the substrate layer (28) such that one port (40) is hermetically sealed by the seal structure and an external port (46) of the seal structure is aligned with the port (38).

Abstract: Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device.

Abstract: This document refers to apparatus and methods for a device layer of a microelectromechanical system (MEMS) sensor having vias with reduced shunt capacitance. In an example, a device layer can include a substrate having a pair of trenches separated in a horizontal direction by a portion of the substrate, wherein each trench of the pair of trenches includes first and second vertical layers including dielectric, the first and second vertical layers separated by a third vertical layer including polysilicon.

Abstract: A method of manufacturing a liquid crystal display having a touch sensor, the method including forming a plurality of thin film transistors on a first substrate, forming a plurality of pixel electrodes each coupled to a corresponding one of the thin film transistors, forming an insulating layer on the pixel electrodes, and forming, on the insulating layer, a plurality of first touch electrodes each having openings formed therein and a plurality of driving lines coupled to the first touch electrodes.

Abstract: A MEMS (microelectromechanical systems) structure comprises a MEMS wafer. A MEMS wafer includes a cap with cavities bonded to a structural layer through a dielectric layer disposed between the cap and the structural layer. Unique configurations of MEMS devices and methods of providing such are set forth which provide for, in part, creating rounded, scalloped or chamfered MEMS profiles by shaping the etch mask photoresist reflow, by using a multi-step deep reactive ion etch (DRIE) with different etch characteristics, or by etching after DRIE.

Abstract: There are many inventions described and illustrated herein. In one aspect, present invention is directed to a thin film encapsulated MEMS, and technique of fabricating or manufacturing a thin film encapsulated MEMS including an integrated getter area and/or an increased chamber volume, which causes little to no increase in overall dimension(s) from the perspective of the mechanical structure and chamber. The integrated getter area is disposed within the chamber and is capable of (i) “capturing” impurities, atoms and/or molecules that are out-gassed from surrounding materials and/or (ii) reducing and/or minimizing the adverse impact of such impurities, atoms and/or molecules (for example, reducing the probability of adding mass to a resonator which would thereby change the resonator's frequency).

Abstract: A method for producing an optical window device for a MEMS device, including applying a layer made of a transparent material onto a substrate having a recess, and deforming the layer so that it is folded and the deformed area of the layer forms an optical window.

Abstract: An organic semiconductor device includes a carrier, a source, a drain, an organic semiconductor single-crystalline channel layer, an organic insulation layer and a gate. The source and the drain are disposed on an upper surface of the carrier. The source and the drain are disposed in parallel and a portion of the carrier is exposed between the source and the drain. The organic semiconductor single-crystalline channel layer is disposed on the upper surface of the carrier and covers a portion of the source, a portion of the drain and the portion of the carrier exposed by the source and the drain. The organic insulation layer covers the carrier, the source, the drain and the organic semiconductor single-crystalline channel layer. The gate is disposed on the organic insulation layer and corresponds to a position of the portion of the carrier exposed by the source and the drain.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer is removed.

Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience while also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer.

Abstract: A MEMS device includes a first chip and a MEMS chip. The first chip has a mounting surface and includes at least an integrated circuit. The MEMS chip has a main surface on which a first set of contact pads for contacting the MEMS device and a second set of contact pads for contacting the first chip are arranged. The first chip is mechanically attached and electrically connected to the second set of contact pads via the mounting surface facing the main surface. The mounting surface of the first chip is at least 25% smaller than the main surface of the MEMS chip.

Abstract: An integrated MEMS pressure sensor is provided, including, a CMOS substrate layer, an N+ implant doped silicon layer, a field oxide (FOX) layer, a plurality of implant doped silicon areas forming CMOS wells, a two-tier polysilicon layer with selective ion implantation forming a membrane, including an implant doped polysilicon layer and a non-doped polysilicon layer, a second non-doped polysilicon layer, a plurality of implant doped silicon areas forming CMOS source/drain, a gate poly layer made of polysilicon forming CMOS transistor gates, said CMOS wells, CMOS transistor sources/drains and CMOS gates forming CMOS transistors, an oxide layer embedded with an interconnect contact layer, a plurality of metal layers interleaved with a plurality of via hole layers, a Nitride deposition layer, an under bump metal (UBM) layer and a plurality of solder spheres. N+ implant doped silicon layer and implant doped/un-doped composition polysilicon layer forming a sealed vacuum chamber.

Abstract: A method of testing a device includes setting a potential of a cap terminal of the device to a first voltage, setting a potential of a self test plate of the device to a testing voltage, and detecting a first displacement of a proof mass of the device when the cap terminal is set to the first voltage and the self test plate is set to the testing voltage. The method includes setting a potential of the cap terminal of the device to a second voltage, detecting a second displacement of the proof mass of the device when the cap terminal is set to the second voltage and the self test plate is set to the testing voltage, and comparing the first displacement and the second displacement to evaluate an electrical connection between the cap terminal and a cap of the device.

Abstract: An integrated circuit system that includes: providing a substrate including a first region and a second region; forming a first device over the first region and a resistance device over the second region; forming a first dielectric layer and a second dielectric layer over the substrate; removing a portion of the second dielectric layer; and annealing the integrated circuit system to remove dopant from the resistance device.

Abstract: A method of forming a light-emitting diode including determining a first level of tensile stress to be applied to a base substrate including a plurality of quantum well layers to adjust a band-gap of the base substrate to a predetermined band-gap. The first level of tensile stress is generated in the base substrate by forming a tensile-stressing layer on the base substrate.

Abstract: In a method for fabricating an electrostatic capacitance-type acceleration sensor having a capacitor which electrostatic capacitance between a movable electrode and a fixed electrode changes according to the displacement of the movable electrode, the method includes: a step of forming a groove on at least one of the surface of an insulative substrate and the surface of a semiconductor substrate; a step of forming a hole in the semiconductor substrate so as to penetrate the semiconductor substrate at a position communicating with a passage formed by the groove; and a step of forming an electrode extraction hole in the insulative substrate so as to penetrate the insulative substrate, at a position communicating with the passage formed by the groove.

Abstract: A capacitive micro-machined ultrasonic transducer (CMUT) and a method of singulating the same. Singulating CMUTs may include forming first trenches in regions of a device wafer defining a plurality of ultrasonic transducer structures, the device wafer including a plurality of the ultrasonic transducer structures, forming an ultrasonic transducer wafer having a plurality of ultrasonic transducers by bonding an electrode pad wafer supplying electricity to the plurality of ultrasonic transducers and the device wafer, and dicing the ultrasonic transducer wafer to form the plurality of ultrasonic transducers by cutting the plurality of ultrasonic transducer structures on the first trench and the electrode pad wafer below the first trench.

Abstract: A method for manufacturing a MEMS device includes providing a cavity within a layer adjacent to a sacrificial layer. The cavity extends to the sacrificial layer and includes a capillary slot protruding into the layer. The sacrificial layer is removed by exposing the sacrificial layer to an etching agent that is introduced through the cavity.

Abstract: A micromechanical sensor is provided which includes a substrate having a main plane of extension and a rocker structure which is connected to the substrate via a torsion means. The torsion means extends primarily along a torsion axis, and the torsion axis is situated essentially in parallel to the main plane of extension of the substrate. The rocker structure is pivotable about the torsion axis from a neutral position into a deflected position, and the rocker structure has a mass distribution which is asymmetrical with respect to the torsion axis. The mass distribution is designed in such a way that a torsional motion of the rocker structure about the torsion axis is effected as a function of an inertial force which is oriented along a Z direction which is essentially perpendicular to the main plane of extension of the substrate.

Abstract: The invention relates to measurement and control of mechanical values, in particular, to control of stress conditions of various structures and manufacturing sensors of resistant strain gauge type for measuring various mechanical values. It can be used in manufacturing sensors of deformation, force, pressure, movement, vibration etc. to increase accuracy in resistant strain gauge measuring at sensitivity preservation. The resistant strain gauge for deformation and pressure measuring represents a dielectric substrate with spread strain-sensing layer in state of polycrystalline film, which contains samarium sulfide, and metal contact pads. Pads are placed on the same side of a film and output signals are soldered to them. Strain-sensing layer comprises holes which connect the pads. According to the first option, strain-sensing layer has the following composition Sm1?xLnxS, where Ln is one from the elements: La, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Tm, Lu, Y, at 0<x<0.3.