Abstract: The present invention provides a thermoelectric conversion material having a low thermal conductivity and having an improved figure of merit, and a method for producing it. The thermoelectric conversion material has, as formed on a substrate having a nano-level microporous nanostructure, a thermoelectric semiconductor layer prepared by forming a thermoelectric semiconductor material into a film, wherein the substrate is a block copolymer substrate formed of a block copolymer that comprises a polymethyl methacrylate unit and a polyhedral oligomeric silsesquioxane-containing polymethacrylate unit, and the thermoelectric semiconductor material is a p-type bismuth telluride or an n-type bismuth telluride. The production method comprises a substrate formation step of forming the nanostructure-having block copolymer substrate, and a film formation step of forming a p-type bismuth telluride or an n-type bismuth telluride into a film to thereby provide a thermoelectric semiconductor layer.

Abstract: A thread has an extent and at least partly includes a thermoelectric material. A method for producing a component for a thermoelectric module includes at least providing at least one thread having an extent, providing a tubular receptacle having an outer circumferential surface and winding the at least one thread around the tubular receptacle in such a way that at least one annular component for a thermoelectric module is formed on the outer circumferential surface. A tubular thermoelectric module is also provided.

Abstract: According to an embodiment, a thermoelectric conversion material made of a polycrystalline material represented by a composition formula (1) shown below and having an MgAgAs type crystal structure is provided. An insulating coat is provided on at least one surface of the polycrystalline material. General formula: (Aa1Tib1)xDyX100-x-y??Composition formula (1) In the composition formula (1) shown above, 0.2?a1?0.7, 0.3?b1?0.8, a1+b1=1, 30?x?35, and 30?y?35 hold. A is at least one element selected from the group consisting of Zr and Hf, D is at least one element selected from the group consisting of of Ni, Co, and Fe, and X is at least one element selected from the group consisting of Sn and Sb.

Abstract: A thermoelectric material and methods of manufacturing thereof are disclosed. In general, the thermoelectric material comprises a Group V-VI host, or matrix, material and Group III-V or Group IV-VI nanoinclusions within the Group V-VI host material. By incorporating the Group III-V or Group IV-VI nanoinclusions into the Group V-VI host material, the performance of the thermoelectric material can be improved.

Abstract: An IR sensor includes a suspended micro-platform having a support layer and a device layer disposed thereon. IR absorbers are disposed in or on the device layer. IR radiation received by the IR absorbers heats an on-platform junction of each of a plurality of series-connected thermoelectric devices operating in a Seebeck mode, the devices producing a voltage indicative of the received IR. Other thermoelectric devices are used to cool the platform, and a pressure sensing arrangement is used to detect loss of vacuum or pressure leaks.

Abstract: A method is disclosed of constructing a composite material structure, comprised of an aerogel precursor foundation, which is then overlaid throughout its interior with an even and continuous thin layer film of doped thermoelectric semiconductor such that electrical current is transmitted as a quantum surface phenomena, while the cross-section for thermal conductivity is kept low, with the aerogel itself dissipating that thermal conductivity. In one preferred embodiment this is achieved using a modified successive ionic layer adsorption and reaction in the liquid phase.

Abstract: In one aspect, optoelectronic devices are described herein. In some embodiments, an optoelectronic device comprises a fiber core, a radiation transmissive first electrode surrounding the fiber core, at least one photosensitive inorganic layer surrounding the first electrode and electrically connected to the first electrode, and a second electrode surrounding the inorganic layer and electrically connected to the inorganic layer. In some embodiments, the device comprises a photovoltaic cell.

Abstract: An infrared sensor array with interconnection type, comprises a substrate, a plurality of circuit units, and a plurality of infrared sensing modules. The substrate defines several sensing segments. Each sensing segment has a base portion, a connecting portion, and a testing portion. The connecting portion is arranged between the base portion and the testing portion. The circuit units are respectively formed on the sensing segments. Each circuit unit has a base circuit, a connecting circuit, and a testing circuit. The connecting circuit electrically connects to the base circuit and the testing circuit. Each base circuit is formed on each base portion, each connecting circuit is formed on each connecting portion, and each testing circuit is formed on each testing portion. The infrared sensing modules are respectively disposed on the base portions and electrically connected to the base circuits.

Abstract: Significant phonon migration restraint is achieved within a relatively homogeneous polycrystalline doped semiconductor bulk by purposely creating in the crystal lattice of the semiconductor hydrocarbon bonds with the semiconductor, typically Si or Ge, constituting effective organic group substituents of semiconductor atoms in the crystalline domains. An important enhancement of the factor of merit Z of such a modified electrically conductive doped semiconductor is obtained without resorting to nanometric cross sectional dimensions in order to rely on surface scattering eventually enhanced by making the surface highly irregular and/or creating nanocavities within the bulk of the conductive material. A determinant scattering of phonons migrating under the influence and in the direction of a temperature gradient in the homogeneous semiconductor takes place at the organic groups substituents in the crystalline doped semiconductor bulk.

Abstract: A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a first doping region arranged at a main surface of the semiconductor substrate, an emitter layer arranged at a back side surface of the semiconductor substrate, at least one first conductivity type area separated from the first doping region by a second doping region of the semiconductor substrate and at least one temperature-stabilizing resistance area. The first doping region has a first conductivity type and the emitter layer has at least mainly a second conductivity type. The second doping region has the second conductivity type and the at least one first conductivity type area has the first conductivity type. The at least one temperature-stabilizing resistance area is located within the second doping region and adjacent to the at least one first conductivity type area.

Abstract: The present invention provides a thermoelectric conversion material having a reduced thermal conductivity and having an improved figure of merit, and a method for producing the material. The thermoelectric conversion material has, as formed on a resin substrate having recesses, a thermoelectric semiconductor layer formed of a thermoelectric semiconductor material, wherein the resin substrate comprises one formed by curing a resin layer of a curable resin composition. The production method for the thermoelectric conversion material comprises a resin substrate formation step of transcribing a protruding structure from an original plate having the protruding structure onto a resin layer of a curable resin composition and curing the layer, and a film formation step of forming a thermoelectric semiconductor layer of a thermoelectric semiconductor material on the resin substrate.

Abstract: An infrared ray sensor includes a thermopile. The thermopile includes a first semiconductor material part and a second semiconductor material part, the first semiconductor material part and the second semiconductor material part are laminated, and a dielectric film is provided between the first semiconductor material part and the second semiconductor material part.

Abstract: An image sensor includes a substrate having a first conductivity type. A first well in the substrate has an opposite conductivity type and is doped with opposite conductivity type dopant. A second well in the first well has the opposite conductivity type and is doped with opposite conductivity type dopant. A first region in the second well has the opposite conductivity type and is doped with opposite conductivity type dopant. A second region in the first region has the first conductivity type and is doped with first conductivity type dopant. A third region in the second well adjacent the first region is of the opposite conductivity type and is doped with opposite conductivity type dopant. A temperature sensor is disposed between, and is connected to each of, the second region and the third region.

Abstract: A method includes preparing a thermoelectric material including p-type or n-type material and first and second caps including transition metal(s). A powder precursor of the first cap can be loaded into a sintering die, punches assembled thereto, and a pre-load applied to form a first pre-pressed structure including a first flat surface. A punch can be removed, a powder precursor of the p-type or n-type material loaded onto that surface, the punch assembled to the die, and a second pre-load applied to form a second pre-pressed structure including a second substantially flat surface. The punch can be removed, a powder precursor of the second cap loaded onto that surface, the first punch assembled to the die, and a third pre-load applied to form a third pre-pressed structure. The third pre-pressed structure can be sintered to form the thermoelectric material; the first or second cap can be coupled to an electrical connector.

Abstract: The present invention provides a thermoelectric conversion material excellent in thermoelectric performance and flexibility and capable of being produced in a simplified manner and at a low cost, and a method for producing the material. The thermoelectric conversion material has, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles and a conductive polymer, and the method for producing a thermoelectric conversion material includes a step of applying the thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles and a conductive polymer onto the support and drying it to forma thin film thereon.

Abstract: The invention relates to a method for producing a thermoelectric component or at least a semifinished version thereof, in which at least one thermoelectric active material in dry powder form is introduced into at least some of the holes of a perforated template. It addresses the problem of specifying a method which can be conducted in a particularly economically viable manner. The problem is solved by virtue of the active material remaining in the holes of the template, and the template filled with active material becoming a constituent of the thermoelectric component produced.

Abstract: Solid state thermoelectric energy conversion devices can provide electrical energy from heat flow, creating energy, or inversely, provide cooling through applying energy. Thick film methods are applied to fabricate thermoelectric device structures using microstructures formed through deposition and subsequent thermal processing conditions. An advantageous coincidence of material properties makes possible a wide variety of unique microstructures that are easily applied for the fabrication of device structures in general. As an example, a direct bond process is applied to fabricate thermoelectric semiconductor thick films on substrates by printing and subsequent thermal processing to form unique microstructures which can be densified. Bismuth and antimony are directly bonded to flexible nickel substrates.

Abstract: An electronic device may include a temperature sensing semiconductor substrate, that may include a thermal sensor at an upper surface thereof, and a cooling semiconductor substrate having an upper surface coupled to a lower surface of the temperature sensing semiconductor substrate. The cooling semiconductor substrate may include a Peltier cooler. At least one of the temperature sensing semiconductor substrate and the cooling semiconductor substrate may have a cavity therein beneath the thermopile and aligned therewith.

Abstract: A thermoelectric element having high thermal resistance and requiring less semiconductor material than a conventional thermoelectric element with comparable performance comprises a substrate having a substrate front side and a substrate rear side opposite the substrate front side, a first contact, applied as a layer to the substrate front side, a second contact, applied as a layer to the substrate front side, a cut-off between the first and second contact which thermally and electrically separates the first and second contact from one another, and a thermoelectrically active layer having a top side and a bottom side, which are connected to one another by lateral delimiting surfaces, wherein the thermoelectrically active layer is arranged in the cut-off in such a way that the bottom side is on the substrate front side, and one of the lateral delimiting surfaces is against the first contact and one of the lateral delimiting surfaces is against the second contact.

Abstract: A MEMS sensor for detecting electromagnetic waves in a particular frequency range is provided. In a preferred embodiment, the MEMS sensor comprises a bottom substrate layer; a first electrode layer over the substrate layer; a pyroelectric layer over the first electrode layer; and a second electrode layer over the pyroelectric layer; wherein a top electrode layer is patterned with a periodic structure that has a periodicity less than or equal to target infrared wavelength.

Abstract: P-type semiconductor sheets and n-type semiconductor sheets formed by mixing a powder of semiconductor material, a binder resin, a plasticizer, and a surfactant are prepared. In addition, separator sheets formed by mixing a resin such as PMMA and a plasticizer are prepared. Through holes are formed in each of the separator sheets and then filled with a conductive material. Thereafter, the p-type semiconductor sheet, the separator sheet, the n-type semiconductor sheet and the separator sheet are stacked. The resultant laminated body is cut into a predetermined size and then subjected to a baking process.

Abstract: A thermoelectric device and method based on creating a structure of nanoclusters in a composite metal and insulator material by co-depositing the metal and insulator material and irradiating the composite material to create nanoclusters of metal within the composite material. In one variation, the composite material may be continuously deposited and concurrently irradiated. A further variation based on a multilayer structure having alternate layers of metal/material mixture. The alternate layers have differing metal content. The layer structure is irradiated with ionizing radiation to produce nanoclusters in the layers. The differing metal content serves to quench the nanoclusters to isolate nanoclusters along the radiation track. The result is a thermoelectric device with a high figure of merit. In one embodiment, the multilayer structure is fabricated and then irradiated with high energy radiation penetrating the entire layer structure.

Abstract: Disclosed are methods of exfoliating a thermoelectric material, such as bismuth telluride or antimony telluride, using one or more ionic liquids. Also disclosed is the exfoliated thermoelectric material provided by the disclosed methods. Further disclosed are compositions comprising the exfoliated thermoelectric material and methods of making and using the compositions. Additionally disclosed are exfoliated transition metal dichalcogenide compositions, methods of making and using such compositions.

Abstract: Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 ??·cm2.

Abstract: An infrared (IR) detector may include a substrate, circuitry carried by the substrate, and a metal-black layer over the thermometric element. The circuitry may include a thermometric element with a measureable thermometric property. The IR detector may include a dielectric layer covering the metal-black layer, and the circuitry provides a value for IR radiation absorbed by the metal-black layer.

Abstract: A method for forming a thermoelectric element for use in a thermoelectric device comprises providing a mask adjacent to a substrate, the mask comprising a polymeric mixture, and bringing a template having a first pattern in contact with the mask to define a second pattern in the mask. The first pattern comprises one of holes and rods, and the second pattern comprises the other of holes and rods. Holes or rods of the second pattern expose portions of the substrate. Next, an etching layer is deposited adjacent to exposed portions of the substrate. The etching layer is configured to aid in etching the substrate. The substrate is subsequently etched with the aid of the etching layer.

Abstract: The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.

Abstract: A thermoelectric composition comprising tin (Sn), tellurium (Te) and at least one dopant that comprises a peak dimensionless figure of merit (ZT) of 1.1 and a Seebeck coefficient of at least 50 ?V/K and a method of manufacturing the thermoelectric composition. A plurality of components are disposed in a ball-milling vessel, wherein the plurality of components comprise tin (Sn), tellurium (Te), and at least one dopant such as indium (In). The components are subsequently mechanically and thermally processed, for example, by hot-pressing. In response to the mechanical-thermally processing, a thermoelectric composition is formed, wherein the thermoelectric composition comprises a dimensionless figure of merit (ZT) of the thermoelectric composition is at least 0.8, and wherein a Seebeck coefficient of the thermoelectric composition is at least 50 ?V/K at any temperature.

Abstract: The inventors demonstrate herein that homogeneous Ag-doped PbTe/Ag2Te composites exhibit high thermoelectric performance (˜50% over La-doped composites) associated with an inherent temperature induced gradient in the doping concentration caused by the temperature-dependent solubility of Ag in the PbTe matrix. This method provides a new mechanism to achieve a higher thermoelectric efficiency afforded by a given material system, and is generally applicable to other thermoelectric materials.

Abstract: The present invention is a photodiode or photodiode array having improved ruggedness for a shallow junction photodiode which is typically used in the detection of short wavelengths of light. In one embodiment, the photodiode has a relatively deep, lightly-doped P zone underneath a P+ layer. By moving the shallow junction to a deeper junction in a range of 2-5 ?m below the photodiode surface, the improved device has improved ruggedness, is less prone to degradation, and has an improved linear current.

Abstract: Silicon-based thermoelectric materials including isoelectronic impurities, thermoelectric devices based on such materials, and methods of making and using same are provided. According to one embodiment, a thermoelectric material includes silicon and one or more isoelectronic impurity atoms selected from the group consisting of carbon, tin, and lead disposed within the silicon in an amount sufficient to scatter thermal phonons propagating through the silicon and below a saturation limit of the one or more isoelectronic impurity atoms in the silicon. In one example, the thermoelectric material also includes germanium atoms disposed within the silicon in an amount sufficient to scatter thermal phonons propagating through the silicon and below a saturation limit of germanium in the silicon. Each of the one or more isoelectronic impurity atoms and the germanium atoms can independently substitute for a silicon atom or can be disposed within an interstice of the silicon.

Abstract: The present invention relates to a thermoelement for use in thermoelectric energy converters for power generation as well as cooling applications. The thermoelement includes a thermoelectric layer with a first side and a second side. Further, the thermoelement includes a first high power factor electrode and a second high power factor electrode. The first high power factor electrode is thermally and electrically attached to the first side of the thermoelectric layer and the second high power factor electrode is thermally and electrically attached to the second side of the thermoelectric layer. Furthermore, the thermoelement includes a plurality of metal layers. The plurality of metal layers are attached to the first high power factor electrode and the second high power factor electrode. In an embodiment of the present invention, a thermoelement comprises a plurality of micro thermoelements that are configured to reduce thermal density at the electrodes.

Abstract: This disclosure examines using lead telluride nanocrystals as well as other materials suitable for thermoelectric conversion, particularly materials with high Figure of Merit values, as coatings on flexible substrates.

Abstract: Thermoelectric modules and methods of making thermoelectric modules that include a plurality of row couples each comprising interconnected pairs of n-type and p-type thermoelectric material legs between a first bonding area and a second bonding area, a first connector bonded to each of the first bonding areas of the plurality of row couples, and a second connector bonded to each of the second bonding areas of the plurality of row couples, wherein the first and second connectors provide mechanical support for and electrical connection between the plurality of row couples. The first and second connectors may be connector members having a patterned conductive surface to define a circuit configuration for the module.

Abstract: Provided is a method of manufacturing a Pb—Te based thermoelectric material, the method comprising: forming a Pb—Te based by mixture mixing element lead, element tellurium and a dopant; melting and then quenching the mixture; and obtaining a thermoelectric sintered body by hot-pressing a molded body obtained after the quenching.

Abstract: A low power thermal imager is disclosed. In one embodiment, the thermal imager comprises a cross-bar architecture having a plurality of horizontal lines each arranged in a row, a plurality of vertical lines each arranged in a column, and a plurality of cross-points each formed at an intersection between one of the plurality of horizontal lines and one of the plurality of vertical lines; and a plurality of tunnel junction structures each located at one of the plurality cross-points, each tunnel junction structure including a first metal layer disposed over one of the plurality of vertical lines, an insulator layer disposed over the first metal layer, and a second metal layer disposed over the insulator layer and underneath one of the plurality of horizontal lines.

Abstract: A MEMS inertial sensor and a method for manufacturing the same are provided. The method includes: depositing a first carbon layer on a semiconductor substrate; patterning the first carbon layer to form a fixed anchor bolt, an inertial anchor bolt and a bottom sealing ring; forming a contact plug in the fixed anchor bolt and a contact plug in the inertial anchor bolt; forming a first fixed electrode, an inertial electrode and a connection electrode on the first carbon layer, where the first fixed electrode and the inertial electrode constitute a capacitor; forming a second carbon layer on the first fixed electrode and the inertial electrode; and forming a sealing cap layer on the second carbon layer and the top sealing ring. Under an inertial force, only the inertial electrode may move, the fixed electrode will almost not move or vibrate, which improves the accuracy of the MEMS inertial sensor.

Abstract: A pyroelectric detector includes a pyroelectric detection element, a support member, a fixing part and a first reducing gas barrier layer. A first side of the support member faces a cavity and the pyroelectric detection element is mounted and supported on a second side opposite from the first side. An opening part communicated with the cavity is formed on a periphery of the support member in plan view from the second side of the support member. The fixing part supports the support member. The first reducing gas barrier layer covers a first surface of the support member on the first side, a side surface of the support member facing the opening part, and a part of a second surface of the support member on the second side and the pyroelectric detection element exposed as viewed from the second side of the support member.

Abstract: In one embodiment, a method of forming a semiconductor device includes providing a substrate, forming a sacrificial layer above the substrate layer, forming a first trench in the sacrificial layer, forming a first sidewall layer with a thickness of less than about 50 nm on a first sidewall of the first trench using atomic layer deposition (ALD), and removing the sacrificial layer.

Abstract: A thermoelectric composite includes a plurality of particles comprising a crosslinked polymer having a heat deflection temperature greater than or equal to 200° F. and a segregated network comprising a first filler material which is disposed between the particles to produce a thermoelectric response in response to application of a voltage difference or temperature difference across the thermoelectric composite. The first filler material includes a carbon material, a metal, a metal disposed on a carbon material, or a combination thereof. A process for preparing a thermoelectric article includes combining a first filler material and a plurality of particles comprising a polymer to form a composition and molding the composition to form a thermoelectric article, wherein the thermoelectric article is configured to produce a thermoelectric response in response to application of a voltage difference or temperature difference across the article.

Abstract: A thermoelectric semiconductor includes a matrix element that forms a matrix, and a dopant element having an atomic radius that is at least 1.09 times as large as the atomic radius of the matrix element.

Abstract: A micron gap thermo-photo-voltaic device including a photovoltaic substrate, a heat source substrate, and a plurality of spacers separating the photovoltaic substrate from the heat source substrate by a submicron gap. Each spacer includes an elongated thin-walled structure disposed in a well formed in the heat source substrate and having a top surface less than a micron above the heat source substrate. Also disclosed are methods of making the spacers.

Abstract: Disclosed is a preparation method of manufacturing a thermoelectric nanowire having a core/shell structure. The preparation method of thermoelectric nanowire includes preparing a substrate provided with an oxide layer formed thereon, and forming a Bi thin film on the oxide layer, heat treating a structure produced during forming the Bi thin film to induce compressive stress due to differences in coefficients of thermal expansion between the substrate, the oxide layer and the Bi thin film, to grow a Bi single crystal nanowire on the Bi thin film, and cooling the substrate of a structure on which the nanowire is grown to a low temperature, and sputtering a thermoelectric material on the Bi single crystal nanowire in a cooled state to manufacture a thermoelectric nanowire having a core/shell structure of Bi/thermoelectric material.

Abstract: A thermoelectric conversion device includes a perovskite film over a substrate and formed with first and second electrodes on the perovskite film, wherein the perovskite film includes a domain having a crystal orientation different from a crystal orientation of a crystal that constitutes the perovskite film.

Abstract: A thermoelectric element module has P-type thermoelectric materials and N-type thermoelectric materials alternately joined between a pair of substrates. The thermoelectric materials include a thermoelectric mixture powder in which a thermoelectric material powder and a low-melting metal powder are mixed at a predetermined ratio. The thermoelectric mixture powder is thermally treated at a temperature lower than a melt point of the thermoelectric material, the thermoelectric mixture powder is formed as the low-melting metal is melted, and at the same time both ends of the thermoelectric materials are joined to the pair of substrates. A method for manufacturing such a thermoelectric material is also provided.

Abstract: Methods of manufacturing a thermoelectric generator via fiber drawing and corresponding or associated thermoelectric generator devices are provided.

Abstract: Disclosed is an electronic apparatus in which a thermoelectric conversion element and at least one of a photoelectric conversion element and a transistor or a diode are monolithically integrated, or which prevents interference between a p-type thermoelectric conversion unit and an n-type thermoelectric conversion unit. This electronic apparatus includes a thermoelectric conversion element (100) including a semiconductor layer of stacked heterostructure (38) which performs thermoelectric conversion using Seebeck effect and at least one of a photoelectric conversion element (102) in which at least a portion of the semiconductor layer of stacked heterostructure (38) performs photoelectric conversion and a transistor (104) or a diode having at least a portion of the semiconductor layer of stacked heterostructure (38) as an operating layer.

Abstract: Solid state thermoelectric energy conversion devices can provide electrical energy from heat flow, creating energy, or inversely, provide cooling through applying energy. Thick film methods are applied to fabricate thermoelectric device structures using microstructures formed through deposition and subsequent thermal processing conditions. An advantageous coincidence of material properties makes possible a wide variety of unique microstructures that are easily applied for the fabrication of device structures in general. As an example, a direct bond process is applied to fabricate thermoelectric semiconductor thick films on substrates by printing and subsequent thermal processing to form unique microstructures which can be densified. Bismuth and antimony are directly bonded to flexible nickel substrates.

Abstract: The object of the present invention is to provide a method of fabricating a thermoelectric material and a thermoelectric material fabricated thereby. According to the present invention, since carbon nanotubes with no surface treatment are dispersed in the alloy, electrical resistivity decreases and electrical conductivity increases in comparison to surface-treated carbon nanotubes and an amount of thermal conductivity decreased is the same as that in the case of using surface-treated carbon nanotubes, and thus, a ZT value, a thermoelectric figure of merit, is improved. A separate reducing agent is not used and an organic solvent having reducing powder is used to improve economic factors related to material costs and process steps, and carbon nanotubes may be dispersed in the thermoelectric material without mechanical milling.

Abstract: A multi-layer thermoelectric module and a fabricating method thereof are provided. The module includes two thermoelectric element sets and a metal electrode set, in which the thermoelectric element sets are corresponding to different operating temperature ranges. Each thermoelectric element set includes a thermoelectric unit, an interfacial adhesion layer, a diffusion barrier layer and a high melting-point metal layer. In the method, the thermoelectric unit, the interfacial adhesion layer, and the diffusion barrier layer are sequentially formed on the thermoelectric unit. Then, two high melting-point metal layers are formed respectively on the electrode layers of the metal electrode set.