Abstract: An integrated circuit, comprising a capacitive device having a thermally variable capacitive value and comprising a thermally deformable assembly disposed within an enclosure, and comprising an electrically-conducting fixed body and a beam held at least two different locations by at least two arms rigidly attached to edges of the enclosure, the beam and the arms being metal and disposed within the first metallization level. A part of the said thermally deformable assembly may form a first electrode of the capacitive device and a part of the said fixed body may form a second electrode of the capacitive device. The thermally deformable assembly has a plurality of configurations corresponding respectively to various temperatures of the said assembly and resulting in a plurality of distances separating the two electrodes and various capacitive values in the capacitive device corresponding to the plurality of distances.

Abstract: A semiconductor device includes a substrate, suspension structures extending from the upper surface of the substrate, and an absorber stack attached to the substrate by the suspension structures. The suspension structures suspend the absorber stack over the substrate such that a gap is defined between the absorber stack and the substrate. The absorber stack includes a plurality of metallization layers interleaved with a plurality of insulating layers. At least one of the metallization layers has a thickness of approximately 10 nm or less.

Abstract: Methods of fabricating a thermoelectric element with reduced yield loss include forming a solid body of thermoelectric material having first dimension of 150 mm or more and thickness dimension of 5 mm or less, and dicing the body into a plurality of thermoelectric legs, without cutting along the thickness dimension of the body. Further methods include providing a metal material over a surface of a thermoelectric material, and hot pressing the metal material and the thermoelectric material to form a solid body having a contact metal layer and a thermoelectric material layer.

Abstract: In a structure for joining thermoelectric devices and electrodes in a thermoelectric module, the thermoelectric module is configured such that multiple P-type thermoelectric devices and multiple N-type thermoelectric devices are alternately disposed so as to be electrically connected in series via electrode members. A connected portion of the electrode member to the P-type thermoelectric device and a connected portion of the electrode member to the N-type thermoelectric device are made of different materials. This can suppress a considerable reduction in connection reliability between the thermoelectric devices and the electrodes even at a high temperature and efficiently transmit a peripheral temperature to the thermoelectric devices.

Abstract: An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In one embodiment, the thermoelectric material is made by depositing a porous film onto a substrate, introducing a dopant into the porous film and annealing the porous film to activate the dopant. In other embodiments, additional amounts of dopant may be introduced via subsequent ion implantations of dopant into the deposited porous film.

Abstract: A simple and cost-effective form of implementing a semiconductor component having a micromechanical microphone structure, including an acoustically active diaphragm as a deflectable electrode of a microphone capacitor, a stationary, acoustically permeable counterelement as a counter electrode of the microphone capacitor, and means for applying a charging voltage between the deflectable electrode and the counter electrode of the microphone capacitor. In order to not impair the functionality of this semiconductor component, even during overload situations in which contact occurs between the diaphragm and the counter electrode, the deflectable electrode and the counter electrode of the microphone capacitor are counter-doped, at least in places, so that they form a diode in the event of contact. In addition, the polarity of the charging voltage between the deflectable electrode and the counter electrode is such that the diode is switched in the blocking direction.

Abstract: A thermoelectric device including: a thermoelectric material layer comprising a thermoelectric material; a transition layer on the thermoelectric material; and a diffusion prevention layer on the transition layer, wherein the thermoelectric material comprises a compound of Formula 1: (A1-aA?a)4-x(B1-bB?b)3-y-zCz??Formula 1 wherein A and A? are different from each other, A is a Group 13 element, and A? is at least one element of a Group 13 element, a Group 14 element, a rare-earth element, or a transition metal, B and B? are different from each other, B is a Group 16 element, and B? is at least one element of a Group 14 element, a Group 15 element, or a Group 16 element, C is at least one halogen atom, a complies with the inequality 0?a<1, b complies with the inequality 0?b<1, x complies with the inequality ?1<x<1, y complies with the inequality ?1<y<1, and z complies with 0?z<0.5.

Abstract: Provided is a method of enhancing thermoelectric performance by surrounding crystalline semiconductors with nanoparticles by contacting a bismuth telluride material with a silver salt under a substantially inert atmosphere and a temperature approximately near the silver salt decomposition temperature; and recovering a metallic bismuth decorated material comprising silver telluride crystal grains.

Abstract: An example embodiment relates to a semiconductor device including a semiconductor package in which a semiconductor chip is mounted on the package substrate. The semiconductor package may include a temperature measurement device and a temperature control circuit. The temperature measurement device may measure a temperature of the semiconductor package. The temperature control circuit may change an operation speed of the semiconductor package on the basis of the temperature of the semiconductor package measured by the temperature measurement device.

Abstract: A resistive memory device capable of suppressing disturbance between cells and a fabrication method thereof are provided. The resistive memory device includes a word line formed, in a first direction, on a semiconductor substrate, lower access structures, each having a pillar shape, formed on the word line, a first insulating layer formed around an outer circumference of each of the lower access structures, a heat-absorption layer formed on a surface of each of the to heat-absorption layers, a variable resistive material formed on the lower access structures, and an upper electrode formed on each variable resistive material.

Abstract: A device and a method of forming the same are disclosed. The device comprises a substrate and a thin film. The substrate is characterized by a first coefficient of thermal expansion. The thin film is attached to a surface of the substrate, and is characterized by a second coefficient of thermal expansion. The thin film includes first and second layers in states of compression, and a third layer in a state of tension, the third layer being positioned between the first and second layers. The thin film is in a net state of tension within a temperature range.

Abstract: Methods for fabricating a nanowire array epoxy composite with high structural integrity and low effective thermal conductivity to achieve a power conversion efficiency goal of approximately 20% and power density of about 104 W/m2 with a maximum temperature below about 380° C. Further, a method includes fabricating a self-supporting thick 3-D interconnected nanowire array with high structural integrity and low effective thermal conductivity to achieve a power conversion efficiency goal of 20% and power density of about 104 W/m2 with a maximum temperature of about 700° C., the nanowire array having substantially only air between nanowires.

Abstract: A vacuum-cavity-insulated flow sensor and related fabrication method are described. The sensor comprises a porous silicon wall with numerous vacuum-pores which is created in a silicon substrate, a porous silicon membrane with numerous vacuum-pores which is surrounded and supported by the porous silicon wall, and a cavity with a vacuum-space which is disposed beneath the porous silicon membrane and surrounded by the porous silicon wall. The fabrication method includes porous silicon formation and silicon polishing in HF solution.

Abstract: An electronic device may include a temperature sensing semiconductor substrate, that may include a thermal sensor at an upper surface thereof, and a cooling semiconductor substrate having an upper surface coupled to a lower surface of the temperature sensing semiconductor substrate. The cooling semiconductor substrate may include a Peltier cooler. At least one of the temperature sensing semiconductor substrate and the cooling semiconductor substrate may have a cavity therein beneath the thermopile and aligned therewith.

Abstract: The present invention provides an energy converting device, which includes: a base substrate; and a plurality of thermoelectric element structures which are sequentially stacked on the base substrate and electrically interconnected in parallel to one another.

Abstract: A current source and method of producing the current source are provided. The current source includes a metal source, a buffer layer, a filter and a collector. An electrical connection is provided to the metal layer and semiconductor layer and a magnetic field applier may be also provided. The source metal has localized states at a bottom of the conduction band and probability amplification. The interaction of the various layers produces a spontaneous current. The movement of charge across the current source produces a voltage, which rises until a balancing reverse current appears. If a load is connected to the current source, current flows through the load and power is dissipated. The energy for this comes from the thermal energy in the current source, and the device gets cooler.

Abstract: In one embodiment, a MEMS sensor includes a mirror and an absorber spaced apart from the mirror, the absorber including a plurality of spaced apart conductive legs defining a tortuous path across an area directly above the mirror.

Abstract: The invention relates to a thermoelectric module comprising a metal housing element and a ceramic layer that is applied to the metal housing element. The thermoelectric module further comprises an additional housing element arranged on the side of the metal housing element which is provided with the ceramic layer, the additional housing element and the metal housing element being joined to form a fluid-tight housing. The thermoelectric module finally comprises at least one thermoelectrically active material which is arranged inside the fluid-tight housing.

Abstract: Disclosed are a temperature sensor device using a thermopile, the total number n of thermocouples thereon can be increased without greatly increasing the internal resistance of the thermopile r, providing high output level and high S/N ratio, a highly sensitive radiation thermometer using the device, and production method of the device using organic material for thin films to form the thermopile. These provide a standardized inexpensive multi-layered thin film thermopile, a radiation thermometer with high sensitivity, and production method of these devices. The temperature sensor device is a device wherein a thermopile which is formed on a thin film thermally isolated from a substrate is place in a temperature sensing part, and the thin film is formed as a multi-layered thin film, a layered thermopile is formed on each layered thin film, the substrate functioning as a heat sink which is one junction of the reference temperature of the thermopile.

Abstract: A thermal detector manufacturing method includes: forming a sacrificial layer on a structure including an insulating layer; forming a support member on the sacrificial layer; forming on the support member a heat-detecting element; forming a first light-absorbing layer so as to cover the heat-detecting element, and planarizing the first light-absorbing layer; forming a contact hole in a portion of the first light-absorbing layer, subsequently forming a thermal transfer member having a connecting portion that connects to the heat-detecting element and a thermal collecting portion having a surface area greater than that of the connecting portion as seen in plan view; forming a second light-absorbing layer on the first light-absorbing layer; and removing the sacrificial layer to form a cavity between the support member and the structure including the insulating layer formed on the surface of the substrate.

Abstract: A resistive random access memory including, an insulating layer, a hard mask layer, a bottom electrode, a memory cell and a top electrode is provided. The insulating layer is disposed on the bottom electrode. The insulating layer has a contact hole having a first width. The hard mask layer has an opening. A portion of the memory cell is exposed from the opening and has a second width smaller than the first width. The top electrode is disposed on the insulating layer and is coupled with the memory cell.

Abstract: A quantum well thermoelectric component for use in a thermoelectric device based on the thermoelectric effect, comprising a stack of layers of two materials respectively made on the basis of silicon and silicon-germanium, the first of the two materials, made on the basis of silicon, defining a barrier semiconductor material and the second of the two materials, made on the basis of silicon-germanium, defining a conducting semiconductor material, the barrier semiconductor material having a band gap higher than the band gap of the conducting semiconductor material, wherein the conducting semiconductor material is an alloy comprising silicon, germanium and at least a lattice-matching element, the lattice-matching element(s) being present in order to control a lattice parameter mismatch between the barrier layer made of the barrier semiconductor material and the conducting layer made of the conducting semiconductor material.

Abstract: A three-dimensional thermoelectric energy harvester and a fabrication method thereof. Low-resistivity silicon is etched to form a plurality of grooves and silicon columns between the grooves, and an insulating layer is formed on a surface of the groove, and thermoelectric columns are fabricated by using a thin-film deposition technique, so that the thermoelectric column and a neighboring silicon column form a thermocouple pair; and then, a metal wiring is fabricated by processes such as etching and deposition, followed by thinning of the substrate and bonding of the supporting substrates, thereby completing fabrication of the three-dimensional thermoelectric energy harvester. Fabrication of the thermocouple pair structure by one thin-film deposition process simplifies the fabrication process. The thermocouple pair using silicon ensures a high Seebeck coefficient. The use of vertical thermocouple pairs having a column structure improves the mechanical stability of the thermoelectric energy harvester.

Abstract: An improved diode energy converter for chemical kinetic electron energy transfer is formed using nanostructures and includes identifiable regions associated with chemical reactions isolated chemically from other regions in the converter, a region associated with an area that forms energy barriers of the desired height, a region associated with tailoring the boundary between semiconductor material and metal materials so that the junction does not tear apart, and a region associated with removing heat from the semiconductor.

Abstract: A miniature thermoelectric energy harvester and a fabrication method thereof Annular grooves are fabricated on a low-resistivity silicon substrate to define silicon thermoelectric columns, an insulating layer is fabricated on the annular grooves, a thermoelectric material is filled in the annular grooves to form annular thermoelectric columns, and then metal wirings, passivation layers and supporting substrates are fabricated, thereby completing the fabrication process. The silicon thermoelectric column using a silicon base material simplifies the fabrication process. The fabrication of the thermocouple structure is one thin-film deposition process, which simplifies the process. The use of silicon as a component of the thermocouple has a high Seebeck coefficient. The use of vertical thermocouples improves the stability. Since the thermocouple structure is bonded to the upper supporting substrate and lower supporting substrate by wafer-level bonding, the fabrication efficiency is improved.

Abstract: The sensor is made on a semiconductor substrate covered with an electrically insulating layer. The electrically insulating layer separates a thermocouple from the substrate. It includes a first portion presenting a first value of capacitance per unit area and a second portion presenting a second value of capacitance per unit area, which is lower than the first value. The sensor includes first and second output terminals connected to the thermocouple. The first output terminal includes a first capacitor having a first electrode formed by a first leg made of an electrically conducting material. The second electrode of the capacitor is formed by a part of the substrate facing said first leg and separated from the first electrode by the first portion of the electrically insulating layer. The first leg connects the thermocouple while overlapping the second portion of the electrically insulating layer.

Abstract: In the present invention, one or more inventive designs and techniques allow formation of high speed complementary metal oxide semiconductor (CMOS) process compatible tunneling devices that are formed on low dielectric loss sheet-substrates (such as silicon or germanium for infrared or quartz and sapphire for visible or near infrared) having the first and the second smooth planar surfaces and an intermediate surface in the form of a hole, or slit, or a side edge, which extends between and connects the first and second surfaces, so that deposited from opposite sides of the sheet-substrate the first metal layer followed by its oxidation or nanometer thickness tunneling dielectric coating and the second metal layer have an overlapped coupled area within the intermediate surface, thus forming a non-planar metal-insulator-metal (MIM) tunneling junction of low capacitance and high cut-off frequency, which is capable to operate at room temperature at terahertz, infrared, and even optical frequencies.

Abstract: A method of forming a thermoelectric device may include forming a first electrically conductive trace, and bonding a thermoelectric element to the first electrically conductive trace. After bonding the thermoelectric element to the first electrically conductive trace, a metal post may be formed on the thermoelectric element so that the thermoelectric element is between the first electrically conductive trace and the metal post. After forming the metal post, the metal post may be bonded to a second electrically conductive trace so that the metal post is between the second electrically conductive trace and the thermoelectric element. Other related methods and structures are also discussed.

Abstract: The object of the present invention is to provide a method of fabricating a thermoelectric material and a thermoelectric material fabricated thereby. According to the present invention, since carbon nanotubes with no surface treatment are dispersed in the alloy, electrical resistivity decreases and electrical conductivity increases in comparison to surface-treated carbon nanotubes and an amount of thermal conductivity decreased is the same as that in the case of using surface-treated carbon nanotubes, and thus, a ZT value, a thermoelectric figure of merit, is improved. A separate reducing agent is not used and an organic solvent having reducing powder is used to improve economic factors related to material costs and process steps, and carbon nanotubes may be dispersed in the thermoelectric material without mechanical milling.

Abstract: A nonvolatile semiconductor memory device includes: a semiconductor member; a memory film provided on a surface of the semiconductor member and being capable of storing charge; and a plurality of control gate electrodes provided on the memory film, spaced from each other, and arranged along a direction parallel to the surface. Average dielectric constant of a material interposed between one of the control gate electrodes and a portion of the semiconductor member located immediately below the control gate electrode adjacent to the one control gate electrode is lower than average dielectric constant of a material interposed between the one control gate electrode and a portion of the semiconductor member located immediately below the one control gate electrode.

Abstract: Disclosed is a differential scanning nanocalorimeter device, methods of fabricating such a device, and methods of use thereof. The nanocalorimeter contains thermal equilibrium areas for sample and reference liquids, with thermometers, compensation heater, and electric trace elements fabricated on a free-standing polymer diaphragm membrane.

Abstract: An object of the invention is to provide a thermoelectric conversion material that can have a balance between flexibility and high thermoelectric conversion capacity, a thermoelectric conversion element using the material, and a device that uses waste heat of, for example, an electronic apparatus and a vehicle by using the element. Provided is a thermoelectric conversion element that includes a layer constituted by an organic material in which a fine particle of a carbon nanotube is dispersed and which has flexibility, preferably, a high glass transition temperature and low thermal conductivity, and in which a mass ratio of the carbon nanotube to the organic material is 50% by mass to 90% by mass, and a device in which the thermoelectric conversion element is installed to a heat release portion of an apparatus.

Abstract: An analytical system-on-a-chip can be used as an analytical imaging device, for example, for detecting the presence of a chemical compound. A layer of analytical material is formed on a transparent layer overlying a solid state image sensor. The analytical material can react in known ways with at least one reactant to block light or to allow light to pass through to the array. The underlying sensor array, in turn, can process the presence, absence or amount of light into a digitized signal output. The system-on-a-chip may also include software that can detect and analyze the output signals of the device.

Abstract: A thermistor includes a metal substrate, a semiconductor ceramic layer on the metal substrate, and a pair of split electrodes on the semiconductor layer. The semiconductor ceramic layer is formed by a solid-phase method. The metal substrate includes ceramic particles and is not interrupted in the direction of thickness by the ceramic particles or a pillar defined by a chain of the ceramic particles. Preferably, the metal substrate and the ceramic layer of the thermistor have a thickness of about 10 ?m to about 80 ?m and about 1 ?m to about 10 ?m, respectively.

Abstract: An energy harvesting integrated circuit (IC) includes electrical connectors, each having a portion of a first material and a portion of a second material. The first and the second materials have a thermoelectric potential. The IC includes a trace of the first material coupled to the first material of each electrical connector, and a trace of the second material coupled to the second material of each electrical connector and the first trace. A portion of the second trace extends away from a portion of the first trace. The IC has charge storing elements coupled to the first and/or second traces. The first material and the second material are heated to create an electron flow from a thermal gradient between a first zone of the heated first and second materials and a second zone of the first and the second materials away from the first zone.

Abstract: The present invention relates to a thermoelectric device using a bulk material of a nano type, a thermoelectric module having the thermoelectric device and a method of manufacturing thereof. According to the present invention, thin film of a nano thickness is formed on a bulk material formed as several nano types to be re-connected for prohibiting the phonon course.

Abstract: In one aspect, photovoltaic apparatus comprising electrical and thermal production capabilities are described herein. In some embodiments, an apparatus described herein comprises a conduit core comprising at least one radiation transmissive surface, a fluid disposed in the conduit core and a photoactive assembly at least partially surrounding the conduit core, the photoactive assembly comprising a radiation transmissive first electrode, at least one photosensitive layer electrically connected to the first electrode, and a second electrode electrically connected to the photosensitive layer.

Abstract: To provide a thermal electromagnetic wave detection element, a method for producing a thermal electromagnetic wave detection element, a thermal electromagnetic wave detection device, and an electrical apparatus, which are highly reliable and make it possible to prevent damage or deformation in the vicinity of the corner parts of a void, a thermal electromagnetic wave detection element includes: a semiconductor substrate; a support member provided on the semiconductor substrate; a detection unit that is provided on the support member and is able to extract from a pair of electrodes an electrical signal corresponding to a received amount of electromagnetic waves; and a pair of electrically conductive vias that perforate through the semiconductor substrate and are electrically connected to the pair of electrodes, a void that opens on the support member side being provided between the pair of vias of the semiconductor substrate.

Abstract: Provided is a compact thermal type flowmeter that can perform a partial thermal treatment on a sensor element portion without affecting other elements and can improve the reliability of a sensor element while improving the sensitivity of the sensor element. A thermal type flowmeter includes a hollow portion which is formed in a semiconductor substrate, a thin film portion which is formed by insulating films provided to cover the hollow portion and, a heating resistor body and a temperature-measuring resistor body which are formed between the insulating films. In a method for manufacturing the thermal type flowmeter, a thermal treatment is performed to grow a crystal grain size of the heating resistor body and a crystal grain size of the temperature-measuring resistor body by heating the thin film portion after forming the thin film portion.

Abstract: The invention relates to a method for manufacturing a thermoelectric device, comprising a first circuit (1), called hot circuit, through which a first fluid can flow, and a second circuit (2), called cold circuit, through which a second fluid can flow at a temperature lower than that of the first fluid, elements (3p, 3n), called thermoelectric elements, that can be used to generate an electric current in the presence of a temperature gradient, fins (5) in a heat exchange relationship with said hot circuit (1) and/or said cold circuit (2), the thermoelectric elements (3p, 3n) being in contact at least with said fins (5). According to the method according to the invention, said fins (5) are compressed in order to ensure that said thermoelectric elements (3p, 3n) are held against said fins (5).

Abstract: A Seebeck solar cell device is disclosed, combining both photovoltaic and thermoelectric techniques. The device may be formed using, for example, a conventional photovoltaic cell formed from a doped silicon wafer. The material used to form conductors to the front and rear regions of the cell are chosen for their thermoelectric characteristics, including the sign, or polarity, of their Seebeck coefficients. The distal portion of each conductor is insulated from the solar and waste heat and, in some embodiments, is also coupled to a cooling mechanism. Multiple such devices can be connected in series or parallel.

Abstract: The present invention relates to laminated solar concentration devices and to the production thereof from polymeric materials. The inventive solar concentration devices can be employed in photovoltaic systems or in solar thermal energy systems. The inventive solar concentration devices comprise Fresnel lenses and enable the efficient concentration of solar radiation onto objects such as solar cells or absorber units, irrespective of the geometry thereof. This relates, for example, to the area of a high-performance solar cell as used in concentrated photovoltaics (CPV), and equally to absorbers which are used in concentrated solar thermal energy systems (CSP). The invention in particular relates to the use of an UV- and weathering-stabilizer package for said laminated solar concentration devices, for improving optical lifetime and weathering resistance, and for preventing delamination.

Abstract: Methods of manufacturing a thermoelectric generator via fiber drawing and corresponding or associated thermoelectric generator devices are provided.

Abstract: Here, an apparatus is provided. The apparatus generally comprises a substrate and a thermopile. The thermopile includes a cavity that is etched into the substrate, a functional area that is formed over the substrate (where the cavity is generally coextensive with the functional area), and a metal ring formed over the substrate along the periphery of the functional area (where the metal ring is thermally coupled to the substrate).

Abstract: A device, method and process of fabricating an interdigitated multicell thermo-photo-voltaic component that is particularly efficient for generating electrical energy from photons in the red and near-infrared spectrum received from a heat source in the near field. Where the absorbing region is germanium, the device is capable of generating electrical energy by absorbing photon energy in the greater than 0.67 electron volt range corresponding to radiation in the infrared and near-infrared spectrum. Use of germanium semiconductor material provides a good match for converting energy from a low temperature heat source. The side that is opposite the photon receiving side of the device includes metal interconnections and dielectric material which provide an excellent back surface reflector for recycling below band photons back to the emitter. Multiple cells may be fabricated and interconnected as a monolithic large scale array for improved performance.

Abstract: A thermoelectric module extends in a longitudinal direction and includes an outer tube, an inner tube disposed within the outer tube and an interspace between the tubes. At least one first strip-shaped structure and one second strip-shaped structure are provided. The first strip-shaped structure extends from a first connection on the inner tube and the second strip-shaped structure extends from a second connection on the outer tube in opposite directions in at least one circumferential direction or in the longitudinal direction and at least partly form an overlap at least in the circumferential direction or in the longitudinal direction. At least one pair of semiconductor elements is disposed in the region of the overlap. A method for producing a thermoelectric module and a thermoelectric generator are also provided.

Abstract: A self-assembly apparatus for assembling a plurality of devices with a predetermined aspect ratio is provided. The self-assembly apparatus includes a guiding element, a vibration device, and a magnetic field inducing device. The guiding element has a mesh structure. The vibration device is coupled to the guiding element and configured to vibrate the guiding element. The magnetic field inducing device is disposed below the guiding element and configured to generate a time-varying magnetic field to rotate each of the devices. Through a collective effect of the vibration of the guiding element, the time-varying magnetic field, and the self-gravity of each of the devices, the devices are positioned on a plate between the guiding element and the magnetic field inducing device through the mesh structure.

Abstract: A pyroelectric detector includes a pyroelectric detection element, a support member, a fixing part and a first reducing gas barrier layer. A first side of the support member faces a cavity and the pyroelectric detection element is mounted and supported on a second side opposite from the first side. An opening part communicated with the cavity is formed on a periphery of the support member in plan view from the second side of the support member. The fixing part supports the support member. The first reducing gas barrier layer covers a first surface of the support member on the first side, a side surface of the support member facing the opening part, and a part of a second surface of the support member on the second side and the pyroelectric detection element exposed as viewed from the second side of the support member.

Abstract: A compact power supply and battery substitute has a cylindrical wall with combustion air and cooling air fans at opposite ends. Air and fuel vapor flows through a mixing tube and an Omega recuperator to a combustion chamber and heats IR emitters spaced from TPV cells. An emitter post array or a catalytic matched emitter are heated by combustion. Exhaust is conducted through the recuperator that heats secondary air and fuel vapors and air in a mixing tube. Cooling air flows over fins radially extending from the TPV cells and past the recuperator and, mixes with exhaust from the recuperators and flows out of the housing past the combustion air fan. Fans are self-powered, and resulting electric power replaces batteries.

Abstract: An RFID based thermal bubble type accelerometer includes a flexible substrate, an embedded system on chip (SOC) unit, an RFID antenna formed on the substrate and coupled to a modulation/demodulation module in the SOC unit, a cavity formed on the flexible substrate, and a plurality of sensing assemblies, including a heater and two temperature-sensing elements, disposed along the x-axis direction and suspended over the cavity. The two temperature-sensing elements, serially connected, are separately disposed at two opposite sides and at substantially equal distances from the heater. Two sets of sensing assemblies can be connected in differential Wheatstone bridge. The series-connecting points of the sensing assemblies are coupled to the SOC unit such that an x-axis acceleration can be obtained by a voltage difference between the connecting points. The x-axis acceleration can be sent by the RFID antenna to a reader after it is is modulated and encoded by the modulation/demodulation module.