Having Additional Optical Element (e.g., Optical Fiber, Etc.) Patents (Class 438/65)
  • Patent number: 10515991
    Abstract: A semiconductor structure includes a substrate including a first side and a second side disposed opposite to the first side and configured to receive an electromagnetic radiation, a barrier layer disposed over the second side of the substrate, a color filter disposed over the barrier layer, and a grid surrounding the color filter and disposed over the barrier layer, wherein the barrier layer is configured to absorb or reflect non-visible light in the electromagnetic radiation, and the barrier layer is disposed between the grid and the substrate.
    Type: Grant
    Filed: April 17, 2015
    Date of Patent: December 24, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Zen-Fong Huang, Volume Chien, Su-Hua Chang
  • Patent number: 10498943
    Abstract: Optoelectronic modules include overmolds that support an optical assembly and, in some case, protect wiring providing electrical connections between an image sensor and a printed circuit board (PCB) or other substrate. The disclosure also describes wafer-level fabrication methods for making the modules.
    Type: Grant
    Filed: June 29, 2016
    Date of Patent: December 3, 2019
    Assignee: AMS SENSORS SINGAPORE PTE. LTD.
    Inventors: Sai Mun Chan, Hartmut Rudmann, Tae Yong Ahn, Kyu Won Hwang
  • Patent number: 10269857
    Abstract: Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.
    Type: Grant
    Filed: July 3, 2017
    Date of Patent: April 23, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei Chuang Wu, Jhy-Jyi Sze, Yu-Jen Wang, Yen-Chang Chu, Shyh-Fann Ting, Ching-Chun Wang
  • Patent number: 9397129
    Abstract: Among other things, one or more image sensors and techniques for forming such image sensors are provided. An image sensor comprises a photodiode array configured to detect light. The image sensor comprises a calibration region configured to detect a color level for image reproduction, such as a black calibration region configured to detect a black level for an image detected by the photodiode array. The image sensor comprises a dielectric film that is formed over the photodiode array and the calibration region. The dielectric film is configured to balance stress between the photodiode and the calibration region in order to improve accuracy of the calibration region.
    Type: Grant
    Filed: March 21, 2014
    Date of Patent: July 19, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Volume Chien, Che-Min Lin, Shiu-Ko JangJian, Chi-Cherng Jeng, Chih-Mu Huang
  • Patent number: 9293495
    Abstract: An image sensor wafer may be stacked on top of a digital signal processor (DSP) wafer. The image sensor wafer may include multiple image sensor dies, whereas the DSP wafer may include multiple DSP dies. The stacked wafers may be cut along scribe line regions to dice the wafers into individual components. Each image sensor die may include through-oxide vias (TOVs) that extend at least partially into a corresponding DSP die. Scribe line support structures may be formed surrounding the scribe line regions. The scribe line support structures and the TOVs may be formed during the same processing step. The TOVs can also be formed through deep trench isolation structures.
    Type: Grant
    Filed: May 5, 2014
    Date of Patent: March 22, 2016
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Swarnal Borthakur, Marc Sulfridge, Mitchell J. Mooney
  • Patent number: 9274289
    Abstract: Embodiments provide a horizontally movable stage, with an opening, of a flip-chip bonder, a substrate including at least one flexible portion and a waveguide, the waveguide exposed at one end edge of the substrate positioned upon the stage with the end edge over the opening, a vertically upwardly movable clamp sized to penetrate the stage opening and positioned underneath the stage, a vertically downwardly movable bond head above the stage opening, an optical component positioned in the head, a glue dispenser positioned to provide glue to either a mating surface of the substrate exposed end edge or a mating surface of the optical component, and a controller connected to the stage, clamp, head and dispenser, including a control circuit for positioning the substrate waveguide exposed end edge underneath the optical component while dispensing glue for fixably bonding the mating surfaces of the optical component and the substrate exposed end edge.
    Type: Grant
    Filed: November 14, 2012
    Date of Patent: March 1, 2016
    Assignee: International Business Machines Corporation
    Inventors: Stefano Sergio Oggioni, Jonas R. Weiss, Bert Jan Offrein
  • Patent number: 9231017
    Abstract: An optical component is fixed precisely on a sensor chip. After a sensor chip including a front surface having a sensor plane with a plurality of light receiving elements is mounted face-up over a wiring substrate, an adhesive is disposed on the front surface of the sensor chip at a plurality of positions, and a plurality of spacers having adherence is formed by curing this adhesive. Then, an adhesive paste is disposed on the front surface of the sensor chip. Then, an optical component held by a bonding tool is disposed on the front surface via the spacer and the adhesive. After that, the bonding tool is separated from the optical component and the optical component is fixed by curing the adhesive in a state in which a load is not applied to the optical component.
    Type: Grant
    Filed: April 1, 2014
    Date of Patent: January 5, 2016
    Assignee: Renesas Electronics Corporation
    Inventor: Eiji Wada
  • Patent number: 9224778
    Abstract: There is provided a solid-state image sensor including a semiconductor substrate in which a plurality of pixels are arranged, and a wiring layer stacked on the semiconductor substrate and formed in such a manner that a plurality of conductor layers having a plurality of wirings are buried in an insulation film. In the wiring layer, wirings connected to the pixels are formed of two conductor layers.
    Type: Grant
    Filed: September 27, 2012
    Date of Patent: December 29, 2015
    Assignee: SONY CORPORATION
    Inventor: Toshifumi Wakano
  • Patent number: 9184206
    Abstract: A method for manufacturing a backside illuminated color image sensor includes (a) modifying the frontside of an image sensor wafer, having pixel arrays, to produce electrical connections to the pixel arrays, wherein the electrical connections extend depth-wise into the image sensor wafer from the frontside, and (b) modifying the backside of the image sensor wafer to expose the electrical connections.
    Type: Grant
    Filed: May 5, 2014
    Date of Patent: November 10, 2015
    Assignee: OmniVision Technologies, Inc.
    Inventors: Wei Zheng, Dyson Hsin-Chih Tai, Vincent Venezia
  • Patent number: 9184331
    Abstract: A method for reducing the tilt of an optical unit during manufacture of an image sensor includes the steps of: providing a semimanufacture of the image sensor, carrying out a preheating process, carrying out an adhesive application process, carrying out an optical unit mounting process, and carrying out a packaging process. Due to the preheating process, the semimanufacture will be subjected to a stabilized process environment during the adhesive application process and the optical unit mounting process, so as for the optical unit to remain highly flat once attached to the semimanufacture. The method reduces the chances of tilt and crack of the optical unit and thereby contributes to a high yield rate.
    Type: Grant
    Filed: February 13, 2013
    Date of Patent: November 10, 2015
    Assignee: Kingpak Technology Inc.
    Inventors: Chun-Hua Chuang, Chien-Wei Chang, Chen-Pin Peng, Chung-Hsien Hsin, Chun-Lung Huang, Hsiu-Wen Tu, Cheng-Chang Wu, Chung-Yu Yang, Rong-Chang Wang, Jo-Wei Yang
  • Patent number: 9172016
    Abstract: According to one embodiment, the optical layer has a larger planar size than the semiconductor layer. The optical layer is transmissive to emission light of the light emitting layer. The first insulating film is provided on a side surface of the semiconductor layer continued from the first surface. The metal film includes a first reflective part covering the side surface of the semiconductor layer via the first insulating film. The metal film includes a second reflective part opposed to the optical layer in a region around the side surface of the semiconductor layer and extending from the first reflective part toward a side opposite from the side surface of the semiconductor layer.
    Type: Grant
    Filed: January 13, 2014
    Date of Patent: October 27, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hideyuki Tomizawa, Akihiro Kojima, Miyoko Shimada, Yosuke Akimoto, Miyuki Shimojuku, Hideto Furuyama, Yoshiaki Sugizaki
  • Patent number: 9136244
    Abstract: Reliability is improved by improving adhesiveness, crack resistance, and moisture resistance of a metal member-resin jointed body by enhancing adhesiveness between the metal member and the resin. A jointed body of a metal member and a resin including: an intermediate layer and a silane coupling agent layer formed on the metal member at an interface between the metal member and the resin, wherein the silane coupling agent layer and the resin are contacted; the intermediate layer is any one of an oxide layer of the metal, a chelating agent layer, a composite layer made of the oxide layer and the chelating agent layer, and a mixed layer made of the oxide and the chelating agent; and the intermediate layer has an electrically non-insulating characteristic, and a method of manufacturing the same.
    Type: Grant
    Filed: December 19, 2012
    Date of Patent: September 15, 2015
    Assignee: Hitachi, Ltd.
    Inventors: Katsumi Mabuchi, Haruo Akahoshi, Shigehisa Motowaki
  • Publication number: 20150144191
    Abstract: The invention is directed to a polymer sheet and its use as part of a solar paneland glass element. The sheet comprises multiple coextruded polymer layers, wherein at least two or more layers of the polymer sheet comprise a luminescence downshifting compound for at least partially absorbing radiation having a certain wavelength and re-emitting radiation at a longer wavelength than the wavelength of the absorbed radiation, and wherein a luminescence downshifting compound in a first polymer layer can absorb more radiation at a lower wavelength than the luminescence downshifting compound present in a next layer.
    Type: Application
    Filed: May 15, 2013
    Publication date: May 28, 2015
    Inventors: Johan Willy Declerck, Koen Hasaers, Kristof Proost
  • Publication number: 20150140720
    Abstract: A process for manufacturing a photonic circuit comprises: manufacturing on a first wafer a first layer stack comprising an underclad oxide layer and a high refractive index waveguide layer; patterning the high refractive index waveguide layer to generate a passive photonic structures; planarizing the first layer stack with a planarizing oxide layer having a thickness below 300 nanometers above the high refractive index waveguide layer; annealing the patterned high refractive index waveguide layer before and/or after the planarizing oxide layer; manufacturing on a second wafer a second layer stack comprising a detachable mono-crystalline silicon waveguide layer; transferring and bonding the first layer stack and the second layer stack; manufacturing active photonic devices in the mono-crystalline silicon waveguide layer; and realizing evanescent coupling between the mono-crystalline silicon waveguide layer and the high refractive index waveguide layer.
    Type: Application
    Filed: January 13, 2015
    Publication date: May 21, 2015
    Inventor: Tom Collins
  • Publication number: 20150131089
    Abstract: An optical spectroscopy device includes a first cladding layer is positioned over a photodetector. An optical core region is over the first cladding layer where the optical core region is configured to receive a light beam. The optical core region includes a first grating having a first pitch where the first pitch is positioned to direct a first wavelength of the light beam to a first portion of the photodetector. The optical core region further includes a second grating having a second pitch where the second grating is positioned to direct a second wavelength of the light beam to a second portion of the photodetector. The first pitch is different from the second pitch, the first wavelength is different from the second wavelength, and the first portion of the photodetector is different from the second portion of the photodetector. Additionally, a second cladding layer is over the optical core region.
    Type: Application
    Filed: November 11, 2013
    Publication date: May 14, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jui Hsieh LAI, Ying-Hao KUO
  • Publication number: 20150132874
    Abstract: Solid-state radiation transducer (SSRT) devices and methods of manufacturing and using SSRT devices are disclosed herein. One embodiment of the SSRT device includes a radiation transducer (e.g., a light-emitting diode) and a transmissive support assembly including a transmissive support member, such as a transmissive support member including a converter material. A lead can be positioned at a back side of the transmissive support member. The radiation transducer can be flip-chip mounted to the transmissive support assembly. For example, a solder connection can be present between a contact of the radiation transducer and the lead of the transmissive support assembly.
    Type: Application
    Filed: January 22, 2015
    Publication date: May 14, 2015
    Inventor: Sameer S. Vadhavkar
  • Publication number: 20150131938
    Abstract: An approach is provided for forming a light coupling in a waveguide layer. The approach involves forming a waveguide layer overlaying an upper surface of a substrate. The approach also involves placing a chip package portion within the waveguide layer in a selected position. The approach further involves forming a molding compound layer overlaying the waveguide layer and the chip package portion. The approach additionally involves curing the molding compound layer to form a cured package. The approach also involves releasing the cured package from the substrate and inverting the cured package. The approach further involves forming a ridge waveguide structure in the waveguide layer by removing a portion of the lower surface of the cured package.
    Type: Application
    Filed: November 8, 2013
    Publication date: May 14, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY. LTD.
    Inventors: Chun-Hao TSENG, Ying-Hao KUO, Kuo-Chung YEE
  • Patent number: 9023695
    Abstract: The present disclosure provides a method of semiconductor device fabrication including forming a mandrel on a semiconductor substrate is provided. The method continues to include oxidizing a region the mandrel to form an oxidized region, wherein the oxidized region abuts a sidewall of the mandrel. The mandrel is then removed from the semiconductor substrate. After removing the mandrel, the oxidized region is used to pattern an underlying layer formed on the semiconductor substrate.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: May 5, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Chao Chiu, Nian-Fuh Cheng, Chen-Yu Chen, Ming-Feng Shieh, Chih-Ming Lai, Wen-Chun Huang, Ru-Gun Lin
  • Publication number: 20150118782
    Abstract: The first face of the pad is situated between the front-side face of the second semiconductor substrate and a hypothetical plane including and being parallel to the front-side face, and a second face of the pad that is a face on the opposite side of the first face is situated between the first face and the front-side face of the second semiconductor substrate, and wherein the second face is connected to the wiring structure so that the pad is electrically connected to the circuit arranged in the front-side face of the second semiconductor substrate via the wiring structure.
    Type: Application
    Filed: December 19, 2014
    Publication date: April 30, 2015
    Inventors: Masahiro Kobayashi, Mineo Shimotsusa
  • Publication number: 20150118783
    Abstract: A stacked body is obtained by stacking a glass plate, a transparent resin sheet, a solar cell, a colored resin sheet, and a first resin sheet in the order. The stacked body is pressed under heat to fabricate the solar cell module. The module includes the glass plate, a transparent sealing layer placed between the glass plate and the solar cell and formed of the transparent resin sheet, a colored sealing layer placed between the first resin sheet and the solar cell and formed of the colored resin sheet, and the first resin sheet. One of the transparent resin sheet and the colored resin sheet has a tan ? of 1 or higher at a temperature of the pressing, and the other one of the transparent resin sheet and the colored resin sheet has a tan ? of less than 1 at the temperature of the pressing.
    Type: Application
    Filed: December 22, 2014
    Publication date: April 30, 2015
    Inventors: Shintaro SAIKI, Atsushi SAITA
  • Patent number: 9018588
    Abstract: A radiation detection apparatus can have optical coupling material capable of absorbing wavelengths of light within approximately 75 nm of a wavelength of scintillating light of a scintillation member of the radiation detection apparatus. In an embodiment, the optical coupling material can be disposed between a photosensor of the radiation detection apparatus and the scintillation member. In a particular embodiment, the composition of the optical coupling material can include a dye. In an illustrative embodiment, the dye can have a corresponding a* coordinate, a corresponding b* coordinate, and an L* coordinate greater than 0. In another embodiment, the optical coupling material can be disposed along substantially all of a side of the photosensor.
    Type: Grant
    Filed: December 15, 2012
    Date of Patent: April 28, 2015
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventor: Peter R. Menge
  • Publication number: 20150108524
    Abstract: Embodiments of the present invention relate to a formulation for use in the fabrication of a light-emitting device, the formulation including a population of semiconductor nanoparticles incorporated into a plurality of discrete microbeads comprising an optically transparent medium, the nanoparticle-containing medium being embedded in a host light-emitting diode encapsulation medium. A method of preparing such a formulation is described. There is further provided a light-emitting device including a primary light source in optical communication with such a formulation and a method of fabricating the same.
    Type: Application
    Filed: December 29, 2014
    Publication date: April 23, 2015
    Inventors: Nigel Pickett, James Harris
  • Patent number: 9013017
    Abstract: A method of making image sensor devices may include forming a sensor layer including image sensor ICs in an encapsulation material, bonding a spacer layer to the sensor layer, the spacer layer having openings therein and aligned with the image sensor ICs, and bonding a lens layer to the spacer layer, the lens layer including lens in an encapsulation material and aligned with the openings and the image sensor ICs. The method may also include dicing the bonded-together sensor, spacer and lens layers to provide the image sensor devices. Helpfully, the method may use WLP to enhance production.
    Type: Grant
    Filed: October 15, 2012
    Date of Patent: April 21, 2015
    Assignee: STMicroelectronics Pte Ltd
    Inventors: Yonggang Jin, Laurent Herard, WeeChinJudy Lim
  • Publication number: 20150102374
    Abstract: An optoelectronic component is specified. According to at least one embodiment of the invention, the optoelectronic component comprises a housing (20) and a radiation-emitting or radiation-receiving semiconductor chip (10) arranged in the housing (20). Furthermore, the component comprises an optical element (50), which contains a polymer material comprising a silicone. The silicone contains at least 40% by weight of cyclic siloxanes, and at least 40% of the silicon atoms of the cyclic siloxanes are crosslinked with a further silicon atom of the silicon via alkylene and/or alkylarylene groups.
    Type: Application
    Filed: May 17, 2013
    Publication date: April 16, 2015
    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Kathy Schmidtke, Michael Kruppa, Bert Braune
  • Publication number: 20150096613
    Abstract: The invention provides a photovoltaic device and method of manufacturing the same. The photovoltaic device of the invention includes a semiconductor structure assembly and a protection layer. The semiconductor structure assembly has a plurality of side surfaces, and includes a p-n junction, an n-p junction, a p-i-n junction, an n-i-p junction, a tandem junction or a multi-junction. In particular, the protection layer is formed to overlay the sides of the semiconductor structure assembly. Thereby, the protection layer can effectively inhibit the potential-induced degradation effect of the photovoltaic device of the invention.
    Type: Application
    Filed: December 12, 2014
    Publication date: April 9, 2015
    Inventors: BUDI TJAHJONO, MING-JUI YANG, CHUAN-WEN TING, WEN SHENG WU, KUO-WEI SHEN, CHIEN HONG LIU
  • Publication number: 20150099323
    Abstract: A stack is obtained by stacking a glass plate, a first transparent resin sheet, a solar cell, a second transparent resin sheet, a colored resin sheet, and a first resin sheet. The stack is pressed under heat to fabricate a module including the glass plate, a first transparent bonding layer placed between the glass plate and the solar cell and formed of the first transparent resin sheet, a second transparent bonding layer placed between the first resin sheet and the solar cell and formed of the second transparent resin sheet, a colored bonding layer placed between the second transparent bonding layer and the first resin sheet and formed of the colored resin sheet, and the first resin sheet. A loss modulus of the colored resin sheet at a temperature of the pressing is higher than a loss modulus of the first transparent resin sheet at the temperature of the pressing.
    Type: Application
    Filed: December 16, 2014
    Publication date: April 9, 2015
    Inventor: Masanori MAEDA
  • Patent number: 8999770
    Abstract: A semiconductor structure includes a module with a plurality of die regions, a plurality of light-emitting devices disposed upon the substrate so that each of the die regions includes one of the light-emitting devices, and a lens board over the module and adhered to the substrate with glue. The lens board includes a plurality of microlenses each corresponding to one of the die regions, and at each one of the die regions the glue provides an air-tight encapsulation of one of the light-emitting devices by a respective one of the microlenses. Further, phosphor is included as a part of the lens board.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: April 7, 2015
    Assignee: TSMC Solid State Lighting Ltd.
    Inventors: Tien-Ming Lin, Chih-Hsuan Sun, Wei-Yu Yeh
  • Publication number: 20150091117
    Abstract: This invention relates to an X-ray sensor having flexible properties and to a method of manufacturing the same. This X-ray sensor includes an array substrate including a semiconductor layer having a light-receiving element; a scintillator panel bonded to the array substrate and including a scintillator layer; a first polymer layer attached to an outer surface of the array substrate by a first adhesive layer; a second polymer layer attached to an outer surface of the scintillator panel by a second adhesive layer; and a third adhesive layer disposed between the array substrate and the scintillator panel so as to attach the array substrate and the scintillator panel to each other.
    Type: Application
    Filed: October 2, 2014
    Publication date: April 2, 2015
    Inventors: Sung Kyn HEO, Ho Seok LEE
  • Publication number: 20150087102
    Abstract: A method comprises implanting ions in a substrate to form a plurality of photo diodes, forming an interconnect layer over a first side of the substrate and applying a first halogen treatment process to a second side of the substrate and forming a first silicon-halogen compound layer over the second side of the substrate as a result of applying the first halogen treatment process.
    Type: Application
    Filed: November 19, 2014
    Publication date: March 26, 2015
    Inventors: Shiu-Ko JangJian, Chin-Nan Wu, Chun Che Lin
  • Publication number: 20150087101
    Abstract: A method for forming a semiconductor device includes providing a wafer having a plurality of chip regions, in which each chip region includes a sensing array on a front side of the wafer. A plurality of through silicon vias is formed in the wafer from a back side of the wafer, in which the plurality of through silicon vias is electrically connected to the plurality of sensing arrays. A filter layer is formed on the plurality of sensing arrays after the plurality of through silicon vias is formed. A cover plate is attached to the front side of the wafer to cover the filter layer.
    Type: Application
    Filed: June 3, 2014
    Publication date: March 26, 2015
    Applicant: Silicon Optronics, Inc.
    Inventor: Pai-Chun ZUNG
  • Publication number: 20150087092
    Abstract: Technologies are generally described for manufacturing an optical device by attaching a light-emitting element to an optical element through a resin. In various examples, a method is described, where a substrate is provided to have a through-hole at a position in the substrate where an optical element is to be mounted. A resin in liquid state may be injected into the through-hole in the substrate. Further, an optical element having a light-emitting portion may be mounted on the substrate such that a center of the tight-emitting portion is self-aligned with a center of the through-hole due to a surface tension of the resin in liquid state. The resin may be cured such that the optical element is fixed to the substrate.
    Type: Application
    Filed: April 22, 2013
    Publication date: March 26, 2015
    Inventor: Hiroshi Goto
  • Publication number: 20150083192
    Abstract: This solar cell has: a substrate having a board-like base, and a first conductive line and a second conductive line, which are disposed on the board-like base; a plurality of multi-junction solar cells, each of which has a lower electrode bonded on and electrically connected to the first conductive line, a cell laminate, which is disposed on the lower electrode, and which includes a bottom cell layer and a top cell layer, a transparent electrode disposed on the upper surface of the top cell layer, and a conductor that connects the transparent electrode to the second conductive line; a glass plate, which has upper portions of the transparent electrodes of the multi-junction solar cells bonded to one surface thereof using an adhesive; and collecting lens, which is disposed on the other glass plate surface with a transparent adhesive therebetween.
    Type: Application
    Filed: April 24, 2013
    Publication date: March 26, 2015
    Inventor: Kazuhiro Nobori
  • Publication number: 20150084145
    Abstract: A disclosed optical semiconductor element includes: a semiconductor substrate having a first main surface and a second main surface in which a plurality of first grooves are formed; a first optical waveguide defined by portions of the semiconductor substrate between the first grooves and having side faces defined by the first grooves; and a photoelectric converter configured to transmit or receive an optical signal propagating through the first optical waveguide. Moreover, the first grooves define part of a guide hole.
    Type: Application
    Filed: September 19, 2014
    Publication date: March 26, 2015
    Inventor: Masahiro Iwama
  • Patent number: 8987035
    Abstract: A method for producing an infrared light detector (1) has the steps of: providing a plurality of connection pins (11, 12), which are kept parallel to one another and arranged with one of the longitudinal ends (17, 18) thereof in a horizontal plane, and a printed circuit board (6) with a planar underside (8), in which a recess (15, 16) of the same form in each case is provided for each of the connection pins (11, 12); filling the recesses (15, 16) with a solder paste, so that in each of the recesses (15, 16) there is a solder paste body (21) with the same amount of solder paste; positioning the printed circuit board (6) over the connection pins (11, 12), so that each of the connection pins (11, 12) extends with its longitudinal end (17, 18) in the recess (15, 16) assigned to it and dips in the solder paste body (21) located in the respective recess (15, 16); liquefying the solder paste bodies (21), so that electrically conducting connections are formed between the connection pins (11, 12) and the solder paste
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: March 24, 2015
    Assignee: Pyreos, Ltd.
    Inventors: Ron Laird, Scott Freeborn, Archie Shaw Stewart
  • Patent number: 8981514
    Abstract: A semiconductor package includes a light transmissive cover having a conductive pattern, a substrate having a cavity, a semiconductor chip in the cavity of the substrate and electrically connected to the conductive pattern arranged on the light transmissive cover, and a blocking pattern between the light transmissive cover and the substrate.
    Type: Grant
    Filed: September 12, 2012
    Date of Patent: March 17, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Han-Sung Ryu, Byoung-Rim Seo, In-Won O
  • Patent number: 8980675
    Abstract: A method for manufacturing a spectroscopic sensor 1 comprises a first step of forming a cavity layer 21 by etching a surface layer disposed on a handle substrate, a second step of forming a first mirror layer 22 on the cavity layer 21 after the first step, a third step of joining a light-transmitting substrate 3 onto the first mirror layer 22 after the second step, a fourth step of removing the handle substrate from the cavity layer 21 after the third step, a fifth step of forming a second mirror layer 23 on the cavity layer 21 devoid of the handle substrate after the fourth step, and a sixth step of joining a light-detecting substrate 4 onto the second mirror layer after the fifth step.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: March 17, 2015
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Katsumi Shibayama, Takashi Kasahara
  • Patent number: 8981413
    Abstract: An optical communication module includes an optical semiconductor element. The element includes an optical functional region having a light receiving function or a light emitting function, a first transmission layer transmissive to light emitted from the optical functional region or light received by the optical functional region, and a wiring layer stacked on the first transmission layer and constituting a conduction path to the optical functional region. The communication module also includes a second transmission layer transmissive to the light and disposed to cover the optical semiconductor element, and a first resin member stacked on the second transmission layer. The communication module is formed with a fixing hole for fixing an optical fiber. The fixing hole includes a bottom face provided by the second transmission layer, and an opening formed in an outer surface of the first resin member.
    Type: Grant
    Filed: February 24, 2014
    Date of Patent: March 17, 2015
    Assignee: Rohm Co., Ltd.
    Inventor: Akira Obika
  • Publication number: 20150068583
    Abstract: Solar module structures 210 and 270 and methods for assembling solar module structures. The solar module structures 210 and 270 comprise three-dimensional thin-film solar cells 110 arranged in solar module structures 210 and 270. The three-dimensional thin-film solar cell comprises a three-dimensional thin-film solar cell substrate (124 and 122, respectively) with emitter junction regions 1352 and doped base regions 1360. The three-dimensional thin-film solar cell further includes emitter metallization regions and base metallization regions. The 3-D TFSC substrate comprises a plurality of single-aperture or dual-aperture unit cells. The solar module structures 270 using three-dimensional thin-film solar cells comprising three-dimensional thin-film solar cell substrates with a plurality of dual-aperture unit cells may be used in solar glass applications.
    Type: Application
    Filed: June 2, 2014
    Publication date: March 12, 2015
    Inventor: Mehrdad M. Moslehi
  • Publication number: 20150072462
    Abstract: An energy conversion device comprises at least two thin film photovoltaic cells fabricated separately and joined by wafer bonding. The cells are arranged in a hierarchical stack of decreasing order of their energy bandgap from top to bottom. Each of the thin film cells has a thickness in the range from about 0.5 ?m to about 10 ?m. The photovoltaic cell stack is mounted upon a thick substrate composed of a material selected from silicon, glass, quartz, silica, alumina, ceramic, metal, graphite, and plastic. Each of the interfaces between the cells comprises a structure selected from a tunnel junction, a heterojunction, a transparent conducting oxide, and an alloying metal grid; and the top surface and/or the lower surface of the energy conversion device may contain light-trapping means.
    Type: Application
    Filed: November 19, 2014
    Publication date: March 12, 2015
    Inventor: Harold J. Hovel
  • Patent number: 8975694
    Abstract: A semiconductor device includes a semiconductor substrate with doped regions of a first type and doped regions of a second type. A first metallization layer connects to the doped regions of the first type through conductive paths, such that current is able to flow within the metallization layer along a plurality of linear axes. A second metallization layer connects to the doped regions of the second type through conductive paths, such that that current is able to flow within the metallization layer along a plurality of linear axes. Contacts on an exterior surface of the semiconductor device can be arranged concentrically.
    Type: Grant
    Filed: March 7, 2013
    Date of Patent: March 10, 2015
    Assignee: VLT, Inc.
    Inventors: Patrizio Vinciarelli, Sergey Luzanov
  • Publication number: 20150064832
    Abstract: A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.
    Type: Application
    Filed: November 3, 2014
    Publication date: March 5, 2015
    Inventors: Meng-Hsun Wan, Yi-Shin Chu, Szu-Ying Chen, Pao-Tung Chen, Jen-Cheng Liu, Dun-Nian Yaung
  • Publication number: 20150064833
    Abstract: A connector of connecting a light sensor and a substrate is utilized for rotating the light sensor so that the light-receiving direction of the light sensor is parallel with the substrate. When the connector is utilized in an optical touch system, the light sensor can be disposed on the substrate of the optical touch system by means of general manufacturing facilities of flat display panels. Meanwhile, the light-receiving direction of the light sensor is parallel with the substrate of the optical touch system.
    Type: Application
    Filed: November 6, 2014
    Publication date: March 5, 2015
    Inventor: Wei-Chung Wang
  • Publication number: 20150056738
    Abstract: A method of manufacturing an image sensor is provided. The method includes forming a photodiode in a pixel area in a first substrate and forming an insulating layer and a metal wire; forming a color filter layer and a microlens on the insulating layer; attaching a cover glass for the microlens to the insulating layer; back-grinding the first substrate to decrease its thickness; forming a via in the first substrate electrically coupled to the metal wire; forming a first microbump on the via; and forming a second microbump on a logic area of a second substrate; and coupling the first and the second microbumps to electrically couple the pixel area to the logic area.
    Type: Application
    Filed: April 10, 2014
    Publication date: February 26, 2015
    Applicant: DONGBU HITEK CO., LTD.
    Inventor: Joon HWANG
  • Publication number: 20150056739
    Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a substrate. The image sensor device includes a first pixel and a second pixel disposed in the substrate. The first and second pixels are neighboring pixels. The image sensor device includes an isolation structure disposed in the substrate and between the first and second pixels. The image sensor device includes a doped isolation device disposed in the substrate and between the first and second pixels. The doped isolation device surrounds the isolation structure in a conformal manner.
    Type: Application
    Filed: October 7, 2014
    Publication date: February 26, 2015
    Inventors: CHIH-YU LAI, Yeur-Luen Tu, Chih-Hui Huang, Cheng-Ta Wu, Chia-Shiung Tsai, Luan C. Tran
  • Publication number: 20150054112
    Abstract: A solid-state imaging device includes a dielectric substrate, a solid-state imaging element disposed on the dielectric substrate, and including a photosensitive unit at a portion of a front surface thereof, an adhesive between the dielectric substrate and the solid-state imaging element, connection conductors, a sealant, and an upper package part. The solid-state imaging element includes a photosensitive unit at a portion of a front surface thereof, and is bonded to the dielectric substrate by the adhesive such that the adhesive is in contact with a portion of a rear surface of the solid-state imaging element so as to permit air flow along other portions of the rear surface of the solid-state image element. The connection conductors electrically connect the solid-state imaging element and the dielectric substrate. The upper package part is provided on the front surface of the solid-state imaging element so as to hermetically seal the photosensitive unit.
    Type: Application
    Filed: February 26, 2014
    Publication date: February 26, 2015
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Mitsuhiro IWAMA, Yasuhiro KOSHIO
  • Publication number: 20150055041
    Abstract: A display panel and an encapsulation method thereof, and a liquid crystal display device are provided. The display panel comprises an array substrate and a color filter substrate, the array substrate and the color filter substrate are connected together via a sealant component, the array substrate comprises a display region and a peripheral region surrounding the display region, the sealant component comprises insulating sealant and conductive sealant and is disposed in the peripheral region of the array substrate, a gate electrode driving GOA circuit is disposed in the peripheral region of the array substrate, and the gate electrode driving GOA circuit and the conductive sealant are not located on the same side of the peripheral region of the display region.
    Type: Application
    Filed: December 10, 2013
    Publication date: February 26, 2015
    Inventors: Qinghua Jiang, Feng Qin, Xiaohe Li, Yong Liu, Xianjie Shao
  • Patent number: 8962370
    Abstract: A radiation detector includes a sensor substrate and a scintillator layer. The sensor substrate is configured to be capable of performing photoelectric conversion. The scintillator layer includes a first area and a second area, the first area including an activator, the second area including the activator with a concentration lower than the concentration of the activator in the first area, the scintillator layer being provided on the sensor substrate so that the first area and the second area are arranged in a thickness direction of the scintillator layer and the first area is arranged from an end portion on a side of the sensor substrate in the scintillator layer in the thickness direction.
    Type: Grant
    Filed: June 17, 2013
    Date of Patent: February 24, 2015
    Assignee: Sony Corporation
    Inventors: Mitsuhiro Kawanishi, Ikumi Kusayama, Takahiro Igarashi
  • Patent number: 8963269
    Abstract: A light-transmissive member has a first principal face, a second principal face, and side faces. The first principal face has a first portion including a center of the first principal face and a second portion between the first portion and the side face sides. The member includes a plurality of altered portions formed between the first principal face and the second principal face so that the plurality of altered portions do not appear on the first principal face, the second principal face, and the side faces. Orthogonal projections of the plurality of altered portions onto the first principal face are included in the second portion.
    Type: Grant
    Filed: August 23, 2012
    Date of Patent: February 24, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventor: Takashi Miyake
  • Patent number: 8963271
    Abstract: In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.
    Type: Grant
    Filed: September 20, 2011
    Date of Patent: February 24, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kazuo Yamazaki, Tetsuya Itano, Nobuyuki Endo, Kyouhei Watanabe
  • Publication number: 20150048470
    Abstract: The invention refers to an electromagnetic radiation sensor micro device for detecting electromagnetic radiation, which device comprises a substrate and a cover at least in part consisting of an electromagnetic radiation transparent material, and comprising a reflection reducing coating and providing a hermetic sealed cavity and an electromagnetic radiation detecting unit arranged within the cavity. The reflection reducing coating is arranged in form of a multi-layer thin film stack, which comprises a first layer and a second layer arranged one upon the other. The first layer has a first refractive index and the second layer has a second refractive index different from the one of said first layer. First and second layer are of such layer thickness that for a certain wavelength there is destructive interference. The invention also refers to a wafer element as well as method for manufacturing such a device.
    Type: Application
    Filed: March 23, 2012
    Publication date: February 19, 2015
    Applicant: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
    Inventor: Wolfgang Reinert