Abstract: A solid-state imaging device includes: an optical filter in which a filter layer is formed on a transparent substrate; a solid-state imaging component that is arranged to be opposed to the optical filter and in which plural pixels that receive light made incident via the filter layer are arrayed in a pixel area of a semiconductor substrate; and a bonding layer that is provided between the optical filter and the solid-state imaging component and sticks the optical filter and the solid-state imaging component together.

Abstract: A photovoltaic module comprising a photovoltaic layer (2) with one or more photovoltaic cells and an encapsulation comprising a top foil (6). The photovoltaic layer (2) is provided with a texture layer (3), e.g. a front side metallization. The encapsulation further comprises a planarization layer (4) directly in contact with the photovoltaic layer (2) and texture layer (3). The planarization layer (4) levels all texture, enabling a top foil (6) being laminated with an adhesive to finalize the photovoltaic module.

Abstract: A wafer-level array camera includes (i) an image sensor wafer including an image sensor array, (ii) a spacer disposed on the image sensor wafer, and (iii) a lens wafer disposed on the spacer, wherein the lens wafer includes a lens array. A method for fabricating a plurality of wafer-level array cameras includes (i) disposing a lens wafer, including a plurality of lens arrays, on an image sensor wafer, including a plurality of image sensor arrays, to form a composite wafer and (ii) dicing the composite wafer to form the plurality of wafer-level array cameras, wherein each of the plurality of wafer-level array cameras includes a respective one of the plurality of lens arrays and a respective one of the plurality of image sensor arrays.

Abstract: A method includes bonding a Backside Illumination (BSI) image sensor chip to a device chip, forming a first via in the BSI image sensor chip to connect to a first integrated circuit device in the BSI image sensor chip, forming a second via penetrating through the BSI image sensor chip to connect to a second integrated circuit device in the device chip, and forming a metal pad to connect the first via to the second via.

Abstract: A silicon photonic photodetector structure, a method for fabricating the silicon photonic photodetector structure and a method for operating a silicon photonic photodetector device that results from the photonic photodetector structure each use a strip waveguide optically coupled with a polysilicon material photodetector layer that may be contiguous with a semiconductor material slab to which is located and formed a pair of electrical contacts separated by the polysilicon material photodetector layer. Within the foregoing silicon photonic photodetector structure and related methods the polysilicon material photodetector layer includes defect states suitable for absorbing an optical signal from the strip waveguide and generating an electrical output signal using at least one of the electrical contacts when the optical signal includes a photon energy less than a band gap energy of a polysilicon material from which is comprised the polysilicon material photodetector layer.

Abstract: A method of manufacturing an image pickup device includes a step of forming a filling member such that the filling member covers a light guiding part and a peripheral part provided in a film. The light guiding part is positioned on an image pickup region of the image pickup device and has openings that correspond to respective photoelectric conversion portions. The peripheral part is positioned on a peripheral region of the image pickup device. The filling member fills in the openings. The method includes a step of processing the filling member. The method includes a step of forming light guiding members, which is performed after the step of processing filling member has been performed, by a polishing process performed on the filling member so that the light guiding part is exposed. The light guiding members are part of the filling member and disposed in the openings.

Abstract: An image sensor includes a color filter, an over-coating layer formed on the color filter, and a medium layer formed on the over-coating layer, wherein the medium layer is configured with at least two medium layers of which refractive indices are different from each other.

Abstract: A photovoltaic cell and method of making are disclosed. The photovoltaic cell includes a substrate having a surface at least partially covered in wrinkles and folds, the folds dividing the surface into a plurality of domains. A photoactive layer is formed on the substrate. At least one transparent electrode is coupled to the photoactive layer and configured to allow transmission of light into the photoactive layer. The domains may have a wrinkle periodicity of less than 2 ?m. The folds may have a fold density of less than 0.25. The transport layer may comprise PEDOT:PSS. The photoactive layer may comprise P3HT:PCBM. The photoactive layer may comprise a bulk heterojunction.

Abstract: Disclosed is a method of fabricating an image sensor device, such as a BSI image sensor, and more particularly, a method of forming a dielectric film in a radiation-absorption region without using a conventional plasma etching causing roughness on the surface and non-uniformity within a die and a wafer. The method includes providing layers comprising a substrate having radiation sensors adjacent its front surface, an anti-reflective layer formed over the back surface of the substrate, a sacrificial dielectric layer formed over the anti-reflective layer, and a conductive layer formed over the sacrificial dielectric layer in a radiation-blocking region. The method further includes removing the sacrificial dielectric layer in the radiation-absorption region completely by a highly selective etching process and forming a dielectric film on the anti-reflective layer by deposition such as CVD or PVD while precisely controlling the thickness.

Abstract: A sensor package includes host substrate assembly includes a first substrate, circuit layers in the first substrate, and first contact pads electrically coupled to the circuit layers. A sensor chip includes a second substrate with opposing first and second surfaces, sensor(s) formed on or under the first surface of the second substrate, a plurality of second contact pads formed at the first surface of the second substrate and which are electrically coupled to the sensor(s), a plurality of holes each formed into the second surface of the second substrate and extends through the second substrate to one of the second contact pads, and conductive leads each extending from one of the second contact pads, through one of the plurality of holes, and along the second surface of the second substrate. A plurality of electrical connectors each electrically connect one of the first contact pads and one of the conductive leads.

Abstract: The present disclosure provides an image sensor device and a method for manufacturing the image sensor device. An exemplary image sensor device includes a substrate having a front surface and a back surface, a plurality of sensor elements disposed at the front surface of the substrate. Each of the plurality of sensor elements is operable to sense radiation projected towards the back surface of the substrate. The image sensor also includes a high-k dielectric grid disposed over the back surface of the substrate. The high-k dielectric grid has a high-k dielectric trench and sidewalls. The image sensor also includes a color filter and a microlens disposed over the high-k dielectric grid.

Abstract: A multi-channel optical device and method of making the same are disclosed. The optical device includes a plurality of detectors on a detector mounting substrate, and a corresponding plurality of lenses on an interior surface of the optical device. Each detector detects light having a unique center wavelength. Each center wavelength corresponds to a channel of the optical device. Each lens focuses light towards a corresponding detector. Each detector has a location corresponding to a focal point of the light focused by a corresponding lens. The method of making the optical device includes placing lenses on a surface of the optical device housing, transmitting light having a plurality of center wavelengths through the lenses, determining locations on a detector mounting substrate where each light beam is focused by a lens, and placing a detector at each location.

Abstract: Methods and structures of barrier detectors are described. The structure may include an absorber that is at least partially reticulated. The at least partially reticulated absorber may also include an integrated electricity conductivity structure. The structure may include at least two contact regions isolated from one another. The structure may further include a barrier layer disposed between the absorber and at least two contact regions.

Abstract: A hermetic package comprising a substrate (110) having a surface with a MEMS structure (101) of a first height (102), the substrate hermetically sealed to a cap (120) forming a cavity over the MEMS structure; the cap attached to the substrate surface by a vertical stack (130) of metal layers adhering to the substrate surface and to the cap, the stack having a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance (140); the stack having a bottom metal seed film (131) adhering to the substrate with a first width (131a), and further a top metal seed film (132) adhering to the cap with a second width (132a) smaller than the first width, the top metal seed film tied to a layer (135) including gold-indium intermetallic compounds, layer (135) having a height greater than the first height.

Abstract: Certain example embodiments relate to techniques for creating improved photovoltaic (PV) modules. In certain example embodiments and first and second glass substrate are provided. A PV array is provided between the first and second glass substrates. The first and second substrates are laminated together with the PV array between the glass substrates. In certain example embodiments the PV module is dimensioned to be similar to an existing roof system (e.g., a sunroof) in a vehicle. In certain example embodiments, holes are provided in a PV module sandwiched between two substrates, the holes being shaped and arranged within the PV module so as to allow light transmission into the vehicle at desired level while still being substantially filled by the laminate or adhesive material used to secure the PV module to the two surrounding substrates.

Abstract: An electronic module comprises: a multilayer circuit board having a bifurcated area along one edge and a plurality of electronic components mounted on at least one surface; a plurality of electrode pads functionally connected to the electronic components and positioned on the inner surfaces of the bifurcated area so that when the two legs of the bifurcated area are spread apart by about 180° the electrode pads align with respective contacts on a motherboard, and are connectable thereto, so that a secure connection may be created between the circuit board and the motherboard; and, two metal, heat spreading covers lockably enclosing the circuit board, one on either side, the covers further providing mating surfaces upon which a mechanical clamping device can engage and secure the module to a motherboard.

Abstract: A method of manufacturing a semiconductor device includes: forming, on a cover glass, a film having a predetermined specific gravity and configured to shield an alpha ray that arises from the cover glass; and bonding the cover glass on which the film is formed and an image pickup device, by filling a transparent resin between the cover glass and the image pickup device.

Abstract: A method for manufacturing a spectroscopic sensor 1 comprises a first step of forming a cavity layer 21 by etching a surface layer disposed on a handle substrate, a second step of forming a first mirror layer 22 on the cavity layer 21 after the first step, a third step of joining a light-transmitting substrate 3 onto the first mirror layer 22 after the second step, a fourth step of removing the handle substrate from the cavity layer 21 after the third step, a fifth step of forming a second mirror layer 23 on the cavity layer 21 devoid of the handle substrate after the fourth step, and a sixth step of joining a light-detecting substrate 4 onto the second mirror layer after the fifth step.

Abstract: The present invention discloses a wafer level image sensor packaging structure and a manufacturing method of the same. The manufacturing method includes the following steps: providing a silicon wafer, dicing the silicon wafer, providing a plurality of transparent lids, fabricating a plurality of semi-finished products, performing a packaging process, mounting solder balls, and cutting an encapsulant between the semi-finished products. The manufacturing method of the invention has the advantage of being straightforward, uncomplicated, and cost-saving. Thus, the wafer level image sensor package structure is lightweight, thin, and compact. To prevent the image sensor chip from cracking on impact during handling, the encapsulant will be arranged on the lateral sides of the semi-finished products during the packaging process.

Abstract: A semiconductor package includes a wiring board, an electronic component mounted on the wiring board, and an enclosing frame arranged on an upper surface of the electronic component. The enclosing frame includes a basal portion, which has the form of a closed frame and extends along the upper surface of the electronic component, and an adhesion portion, which is wider than the basal portion and is arranged on the upper surface of the basal portion. A cap is adhered to an upper surface of the adhesion portion. A molding resin contacts a lower surface of the adhesion portion and seals the electronic component and the wiring board that are exposed from the enclosing frame.

Abstract: An image sensor package, and method of making same, that includes a printed circuit board having a first substrate with an aperture extending therethrough, one or more circuit layers, and a plurality of first contact pads electrically coupled to the one or more circuit layers. A sensor chip mounted to the printed circuit board and disposed at least partially in the aperture. The sensor chip includes a second substrate, a plurality of photo detectors formed on or in the second substrate, and a plurality of second contact pads formed at the surface of the second substrate which are electrically coupled to the photo detectors. Electrical connectors each electrically connect one of the first contact pads and one of the second contact pads. A lens module is mounted to the printed circuit board and has one or more lenses disposed for focusing light onto the photo detectors.

Abstract: A wafer-level bonding method for fabricating wafer level camera lenses is disclosed. The method includes: providing a lens wafer including lenses arranged in an array and a sensor wafer including sensors arranged in an array; measuring and analyzing an FFL of each lens to obtain a corresponding FFL compensation value for each lens; forming a thin transparent film (TTF) on each sensor of the sensor wafer, and the thickness of TTF is determined by the FFL compensation value of the corresponding lens; aligning and bonding the lens wafer with the sensor wafer having TTFs formed thereon. Since the focal length of each lens is adjusted to compensate the FFL of the lens by adding a TTF of transparent optical material with an index of refraction that is similar to the index of refraction of the sensor cover glass, the FFL variation of each camera lens can be reduced.

Abstract: A method for producing a radiation-emitting or radiation-receiving semiconductor component is specified. In a method step, a carrier body having a mounting surface is provided. In a further method step, a barrier frame is formed on the mounting surface, in such a way that the barrier frame laterally encloses a mounting region of the mounting surface. In a further method step, a radiation-emitting or radiation-receiving semiconductor chip is mounted within the mounting region on the mounting surface. The semiconductor chip is potted with a liquid lens material, wherein the lens material is applied to the mounting surface within the mounting region. The lens material is cured. The mounting surface, the barrier frame and the lens material are adapted to one another.

Abstract: A method for producing a concentrating solar cell module having the steps of: preparing a base portion having a plurality of mounting regions for mounting solar cells and a plurality of lead electrodes for electrically connecting the solar cells with external electrodes, and a support composed of a thermosetting resin, the support surrounding each of the mounting regions of the base portion; mounting the solar cells on the mounting regions; molding a condensing lens above the mounting regions so as to encapsulate the solar cells, plating a surface of the mounting regions of the prepared base portion after the preparing step and before the mounting step; and joining the support to the base portion after the mounting step and before the molding step, wherein in the molding step, the condensing lens is molded with a transparent thermosetting silicone resin.

Abstract: Arrayed imaging systems include an array of detectors formed with a common base and a first array of layered optical elements, each one of the layered optical elements being optically connected with a detector in the array of detectors.

Abstract: A solar cell module has a multiple reflection cavity formed by two parallel solar cell layers. A dye sensitized solar cell layer fills the multiple reflection cavity. The mechanism helps improve the photoelectric conversion efficiency. The fabricating method of the same is also described.

Abstract: An optical component is fixed precisely on a sensor chip. After a sensor chip including a front surface having a sensor plane with a plurality of light receiving elements is mounted face-up over a wiring substrate, an adhesive is disposed on the front surface of the sensor chip at a plurality of positions, and a plurality of spacers having adherence is formed by curing this adhesive. Then, an adhesive paste is disposed on the front surface of the sensor chip. Then, an optical component held by a bonding tool is disposed on the front surface via the spacer and the adhesive. After that, the bonding tool is separated from the optical component and the optical component is fixed by curing the adhesive in a state in which a load is not applied to the optical component.

Abstract: Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor.

Abstract: Luminescent materials and methods of forming such materials are described herein. A method of forming a luminescent material includes: (1) providing a source of A and X, wherein A is selected from at least one of elements of Group 1, and X is selected from at least one of elements of Group 17; (2) providing a source of B, wherein B is selected from at least one of elements of Group 14; (3) subjecting the source of A and X and the source of B to vacuum deposition to form a precursor layer over a substrate; (4) forming an encapsulation layer over the precursor layer to form an assembly of layers; and (5) heating the assembly of layers to a temperature Theat to form a luminescent material within the precursor layer.

Abstract: Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.

Abstract: The invention described here is a variable optical density solar collector optimized to be used in a nominally vertical orientation and in synergy with an adjacent, complementary solar concentrator.

Abstract: Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a BSI sensor device with an application specific integrated circuit (ASIC) are disclosed. A bond pad array may be formed in a bond pad area of a BSI sensor where the bond pad array comprises a plurality of bond pads electrically interconnected, wherein each bond pad of the bond pad array is of a small size which can reduce the dishing effect of a big bond pad. The plurality of bond pads of a bond pad array may be interconnected at the same layer of the pad or at a different metal layer. The BSI sensor may be bonded to an ASIC in a face-to-face fashion where the bond pad arrays are aligned and bonded together.

Abstract: A wafer-level packaging method of BSI image sensors includes the following steps: S1: providing a wafer package body comprising a silicon base, an interconnect layer, a hollow wall and a substrate; S2: cutting the wafer package body via a first blade in a first cutting process to separate the interconnect layer of adjacent BSI image sensors; and S3: cutting the wafer package body via a second blade in a second cutting process to obtain independent BSI image sensors. As a result, damage of the interconnect layer and the substrate may be decreased to improve performance and reliability of the BSI image sensor.

Abstract: Method for the linear structuring of a coated substrate for producing thin-film solar cell modules in which tracks are introduced in an upper structure plane so as to be adapted to the path of existing tracks in a lower structure plane in that a structuring tool is controlled in y direction by means of a control quantity which is derived from image recordings of the existing tracks, and the substrate is moved back and forth under the structuring tool. The image recordings for acquiring existing tracks are carried out only during the forward passes. The generation of tracks takes place during the forward passes and backward passes.

Abstract: A solid-state image pickup apparatus includes a photoelectric converter, a wiring portion, a micro lens, and an adjustment film. The photoelectric converter is formed on a light incident side in a substrate. The wiring portion is formed on a side of the substrate that is opposite to the light incident side. The micro lens is formed on a light incident side of the photoelectric converter. The adjustment film adjusts variation of a light reception sensitivity in the photoelectric converter with respect to a wavelength of light that enters the photoelectric converter through the micro lens, and the adjustment film is formed between the photoelectric converter and the micro lens.

Abstract: A method for manufacturing solid-state imaging device for collectively manufacturing a multiplicity of solid-state imaging devices at a wafer level, the method including: a step of reducing the thickness of a cover glass wafer (10) after providing a mask material (12) to the cover glass wafer (10) including frame-shaped spacers (5); a step of releasing the mask material (12) and laminating a first support wafer (14) through a lamination member (16); a step of positioning and bonding a silicon wafer (18) and the cover glass wafer (10), the silicon wafer (18) including a second support wafer (22) laminated on the back side through a lamination member (24); a step of dicing the cover glass wafer (10) into cover glasses (4) by a whetstone (26); and a step of dicing the silicon wafer (18) by a whetstone (28).

Abstract: An image sensor device may include an interconnect layer, an image sensor IC adjacent the interconnect layer and having an image sensing surface, and a dielectric layer adjacent the image sensor IC and having an opening therein aligned with the image sensing surface. The image sensor device may also include an IR filter adjacent and aligned with the image sensing surface, and an encapsulation material adjacent the dielectric layer and laterally surrounding the IR filter.

Abstract: Mounting procedure of a high-concentration photovoltaic solar module and module thus obtained, defined to carry out a simple final mounting based on a set of elements arriving from the factory in optimum packaging to facilitate the logistics, three being the main mounting sequences: Sequence 1: optoelectronic system assembly Sequence 2: mounting of the optoelectronic system at the base of the module, interconnecting and tests Sequence 3: final assembly of the module, and wherein the module thus mounted comprises: a series of equal optoelectronic systems placed in a matrix configuration and each one of them formed by secondary optics (1), a photovoltaic receiver (2), a thermal adhesive (3), a heat sink (4) and a fastening piece of the secondary optics composed by a body and a washer, the structure of the module, and the upper lens (9).

Abstract: The present invention provides a concentrating solar cell module comprising: a base portion having a plurality of mounting regions for mounting solar cells and a plurality of lead electrodes for electrically connecting the solar cells with external electrodes; a support molded with a thermosetting resin such that each of the mounting regions of the base portion is surrounded; the solar cells mounted on the mounting regions; and a condensing lens molded above the mounting regions so as to encapsulate the solar cells, wherein a surface of the mounting regions of the base portion is plated and the condensing lens is molded with a transparent thermosetting silicone resin. The concentrating solar cell module has high heat dissipation properties and a high photoelectric conversion efficiency.

Abstract: A solid-state imaging device includes a semiconductor substrate having a photodiode formed therein, and a lamination structure of an insulating film and a wiring. The solid-state imaging device includes a partition wall formed on a wiring layer, constituted by an inorganic material and formed in a portion corresponding to a portion provided between the adjacent photodiodes, and a color filter constituted by an organic material and formed between the adjacent partition walls. The solid-state imaging device includes an adhesion layer constituted by an organic material and formed between a side surface of the partition wall and the color filter. An adhesive property of the adhesion layer to the color filter is higher than that of the partition wall to the color filter, and an adhesive property of the adhesion layer to the partition wall is higher than an adhesive property of the color filter to the partition wall.

Abstract: An energy conversion device includes a holographic lens arranged between a glass slab and the first solar cell. The holographic lens is configured to concentrate a portion of a first component of impinging electromagnetic radiation onto the first solar cell and direct a portion of a second component of the electromagnetic radiation away from the first solar cell. The first solar cell is a back contact solar cell configured to convert the first component of the electromagnetic radiation into electrical energy.

Abstract: A solar cell receiver for use in a concentrating solar system which concentrates the solar energy onto a solar cell for converting solar energy to electricity. The solar cell receiver may include a solar cell mounted on a support and with one or more III-V compound semiconductor layers. An optical element may be positioned over the solar cell and have an optical channel with an inlet that faces away from the solar cell and an outlet that faces towards the solar cell. A frame may be positioned over the support and extend around the solar cell with the frame having an inner side that extends above the support and faces towards the optical element. An encapsulant may be positioned over the support and contained between the optical element and the frame. The encapsulant may have enlarged heights at contact points with the optical element and the frame and a reduced height between the contact points away from the optical element and the frame. The solar cell receiver may be used in a solar cell module.

Abstract: An image sensor device includes a substrate including a light sensing region therein and a reflective structure on a first surface of the substrate over the light sensing region. An interconnection structure having a lower reflectivity than the reflective structure is provided on the first surface of the substrate adjacent to the reflective structure. A microlens is provided on a second surface of the substrate opposite the first surface. The microlens is configured to direct incident light to the light sensing region, and the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. Related devices and fabrication methods are also discussed.

Abstract: A solid-state imaging device includes: a plurality of pixel cells; and column signal lines. Each of the pixel cells includes: a photoelectric conversion film, a pixel electrode, a transparent electrode, an amplifier transistor, a reset transistor, and an address transistor. The solid-state imaging device further includes: a lower-refractive-index transparent layer formed above the transparent electrode; and higher-refractive-index transparent parts embedded in the lower-refractive-index transparent layer and each having a refractive index higher than a refractive index of the lower-refractive-index transparent layer. Each of the higher-refractive-index transparent parts separates light passing through the higher-refractive-index transparent part into zero-order diffracted light, first-order diffracted light, and negative-first-order diffracted light which exit the higher-refractive-index transparent part and travel toward the photoelectric conversion film.

Abstract: A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a region of a silicon oxide surface that is left uncovered, while deposition is inhibited in another region by a contact shadow mask. The Al2O3 layer is an antireflection coating. In addition, the Al2O3 layer can also provide a chemically resistant separation layer between the silicon oxide surface and additional antireflection coating layers. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar antireflection properties and chemical protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.

Abstract: Fabricating optical devices can include mounting a plurality of singulated lens systems over a substrate, adjusting a thickness of the substrate below at least some of the lens systems to provide respective focal length corrections for the lens systems, and subsequently separating the substrate into a plurality of optical modules, each of which includes one of the lens systems mounted over a portion of the substrate. Adjusting a thickness of the substrate can include, for example, micro-machining the substrate to form respective holes below at least some of the lens systems or adding one or more layers below at least some of the lens systems so as to correct for variations in the focal lengths of the lens systems.

Abstract: A image sensor packaging method includes the steps of: a) installing an image sensor chip in a circuit substrate and then covering a light transmissive cover on the image sensor chip over a sensing zone of the image sensor chip and then covering a passivation layer on the light transmissive cover, b) using a plurality of lead wires to connect respective conducting contacts of the circuit substrate to respective conducting contacts of the image sensor chip, c) molding an encapsulation on the circuit substrate and the image sensor chip to wrap the lead wires, and d) removing the passivation layer. Thus, the light transmissive cover and the passivation layer protect the sensing zone of the image sensor chip and the light transmissive cover against contamination and damage, and therefore, this image sensor chip packaging method has high-yield performance.

Abstract: A sensor chip protective image sensor packaging method includes the steps of a) installing an image sensor chip in a circuit substrate and then covering a passivation layer on a sensing zone of the image sensor chip, b) using a plurality of lead wires to connect respective conducting contacts of the circuit substrate to respective conducting contacts of the image sensor chip, c) molding an encapsulation on the circuit substrate and the image sensor chip to wrap the lead wires, d) removing the passivation layer, and e) mounting a light transmissive cover in the encapsulation over the sensing zone of the image sensor chip. Thus, the passivation layer protects the sensing zone of the image sensor chip against contamination and damage prior before having been protected by the cover, and therefore, this image sensor chip packaging method has high-yield performance.

Abstract: Image sensors, electronic apparatuses, and methods of manufacturing an image sensor are provided. More particularly, an image sensor having a plurality of photoelectric conversion elements included in a laminated body is provided. At least one of the photoelectric conversion elements includes organic photoelectric conversion elements. In addition, at least a first surface of the laminated body includes a curved light incident surface, which further includes a concave surface. The plurality of photoelectric conversion elements receive light through the concave light incident surface. The laminated body can be connected to a support structure.

Abstract: The invention provides an optical system, in particular, a multi-channel parallel optical transceiver system and methods of forming the same. The multi-channel parallel optical system includes a first substrate with at least one optical component mounted on its first side, a second substrate with optical fibers affixed in fiber fixing structures (grooves), the second substrate being mounted on the first side of the first substrate perpendicular to the first side of the first substrate so that the optical signal can be transmitted and received between the optical fibers and the mounted optical components with minimum loss. Passive alignment assembly is realized by using a series of alignment pins and holes and/or grooves pre-fabricated on the substrates. The optical systems may additionally include other structures to provide additional functionalities, in-line monitor photodetectors, and mechanical support or substrate elevation.