Abstract: An energy conversion device comprises at least two thin film photovoltaic cells fabricated separately and joined by wafer bonding. The cells are arranged in a hierarchical stack of decreasing order of their energy bandgap from top to bottom. Each of the thin film cells has a thickness in the range from about 0.5 ?m to about 10 ?m. The photovoltaic cell stack is mounted upon a thick substrate composed of a material selected from silicon, glass, quartz, silica, alumina, ceramic, metal, graphite, and plastic. Each of the interfaces between the cells comprises a structure selected from a tunnel junction, a heterojunction, a transparent conducting oxide, and an alloying metal grid; and the top surface and/or the lower surface of the energy conversion device may contain light-trapping means.

Abstract: Solar module structures 210 and 270 and methods for assembling solar module structures. The solar module structures 210 and 270 comprise three-dimensional thin-film solar cells 110 arranged in solar module structures 210 and 270. The three-dimensional thin-film solar cell comprises a three-dimensional thin-film solar cell substrate (124 and 122, respectively) with emitter junction regions 1352 and doped base regions 1360. The three-dimensional thin-film solar cell further includes emitter metallization regions and base metallization regions. The 3-D TFSC substrate comprises a plurality of single-aperture or dual-aperture unit cells. The solar module structures 270 using three-dimensional thin-film solar cells comprising three-dimensional thin-film solar cell substrates with a plurality of dual-aperture unit cells may be used in solar glass applications.

Abstract: A semiconductor device includes a semiconductor substrate with doped regions of a first type and doped regions of a second type. A first metallization layer connects to the doped regions of the first type through conductive paths, such that current is able to flow within the metallization layer along a plurality of linear axes. A second metallization layer connects to the doped regions of the second type through conductive paths, such that that current is able to flow within the metallization layer along a plurality of linear axes. Contacts on an exterior surface of the semiconductor device can be arranged concentrically.

Abstract: A connector of connecting a light sensor and a substrate is utilized for rotating the light sensor so that the light-receiving direction of the light sensor is parallel with the substrate. When the connector is utilized in an optical touch system, the light sensor can be disposed on the substrate of the optical touch system by means of general manufacturing facilities of flat display panels. Meanwhile, the light-receiving direction of the light sensor is parallel with the substrate of the optical touch system.

Abstract: A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.

Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a substrate. The image sensor device includes a first pixel and a second pixel disposed in the substrate. The first and second pixels are neighboring pixels. The image sensor device includes an isolation structure disposed in the substrate and between the first and second pixels. The image sensor device includes a doped isolation device disposed in the substrate and between the first and second pixels. The doped isolation device surrounds the isolation structure in a conformal manner.

Abstract: A solid-state imaging device includes a dielectric substrate, a solid-state imaging element disposed on the dielectric substrate, and including a photosensitive unit at a portion of a front surface thereof, an adhesive between the dielectric substrate and the solid-state imaging element, connection conductors, a sealant, and an upper package part. The solid-state imaging element includes a photosensitive unit at a portion of a front surface thereof, and is bonded to the dielectric substrate by the adhesive such that the adhesive is in contact with a portion of a rear surface of the solid-state imaging element so as to permit air flow along other portions of the rear surface of the solid-state image element. The connection conductors electrically connect the solid-state imaging element and the dielectric substrate. The upper package part is provided on the front surface of the solid-state imaging element so as to hermetically seal the photosensitive unit.

Abstract: A method of manufacturing an image sensor is provided. The method includes forming a photodiode in a pixel area in a first substrate and forming an insulating layer and a metal wire; forming a color filter layer and a microlens on the insulating layer; attaching a cover glass for the microlens to the insulating layer; back-grinding the first substrate to decrease its thickness; forming a via in the first substrate electrically coupled to the metal wire; forming a first microbump on the via; and forming a second microbump on a logic area of a second substrate; and coupling the first and the second microbumps to electrically couple the pixel area to the logic area.

Abstract: A display panel and an encapsulation method thereof, and a liquid crystal display device are provided. The display panel comprises an array substrate and a color filter substrate, the array substrate and the color filter substrate are connected together via a sealant component, the array substrate comprises a display region and a peripheral region surrounding the display region, the sealant component comprises insulating sealant and conductive sealant and is disposed in the peripheral region of the array substrate, a gate electrode driving GOA circuit is disposed in the peripheral region of the array substrate, and the gate electrode driving GOA circuit and the conductive sealant are not located on the same side of the peripheral region of the display region.

Abstract: A radiation detector includes a sensor substrate and a scintillator layer. The sensor substrate is configured to be capable of performing photoelectric conversion. The scintillator layer includes a first area and a second area, the first area including an activator, the second area including the activator with a concentration lower than the concentration of the activator in the first area, the scintillator layer being provided on the sensor substrate so that the first area and the second area are arranged in a thickness direction of the scintillator layer and the first area is arranged from an end portion on a side of the sensor substrate in the scintillator layer in the thickness direction.

Abstract: A light-transmissive member has a first principal face, a second principal face, and side faces. The first principal face has a first portion including a center of the first principal face and a second portion between the first portion and the side face sides. The member includes a plurality of altered portions formed between the first principal face and the second principal face so that the plurality of altered portions do not appear on the first principal face, the second principal face, and the side faces. Orthogonal projections of the plurality of altered portions onto the first principal face are included in the second portion.

Abstract: In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.

Abstract: The invention refers to an electromagnetic radiation sensor micro device for detecting electromagnetic radiation, which device comprises a substrate and a cover at least in part consisting of an electromagnetic radiation transparent material, and comprising a reflection reducing coating and providing a hermetic sealed cavity and an electromagnetic radiation detecting unit arranged within the cavity. The reflection reducing coating is arranged in form of a multi-layer thin film stack, which comprises a first layer and a second layer arranged one upon the other. The first layer has a first refractive index and the second layer has a second refractive index different from the one of said first layer. First and second layer are of such layer thickness that for a certain wavelength there is destructive interference. The invention also refers to a wafer element as well as method for manufacturing such a device.

Abstract: Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor.

Abstract: Disclosed herein is a method for manufacturing a solid-state imaging element, the method including forming lenses that are each provided corresponding to a light receiving part of a respective one of a plurality of pixels arranged in an imaging area over a semiconductor substrate and collect light onto the light receiving parts; forming a light blocking layer by performing film deposition on the lenses by using a material having light blocking capability; and forming a light blocker composed of the material having light blocking capability at a boundary part between the lenses adjacent to each other by etching the light blocking layer in such a manner that the material having light blocking capability is left at the boundary part between the lenses.

Abstract: A photovoltaic module including a plate transparent to the incident electromagnetic radiation, a photovoltaic cell including an active face arranged facing said transparent plate, a spectral conversion element including a luminescent material formed by at least a first spectral conversion area arranged facing a lateral face of the photovoltaic cell, a direct transmission area separating the transparent plate from the photovoltaic cell, the spectral conversion element including a second spectral conversion area extending the first spectral conversion area, the second spectral conversion area being positioned on the peripheral edge of the active face of the photovoltaic cell, so that the part of the active face of the photovoltaic cell directly receiving the incident electromagnetic radiation represents between 40% and 90% of the total surface of the active face of the photovoltaic cell.

Abstract: An image sensor device may include a mounting substrate having an IC-receiving cavity therein and a filter-receiving opening aligned with the IC-receiving cavity, an image sensor integrated circuit (IC) within the IC-receiving cavity and having an image sensing area aligned with the filter-receiving opening, and an adhesive bead on the image sensor IC surrounding the image sensing area. Furthermore, an infrared (IR) filter may be within the filter-receiving opening and have peripheral portions contacting the adhesive bead.

Abstract: An electronic device may include a substrate, an image sensor IC over the substrate, and a lens assembly above the substrate. The lens assembly may include a spacer above the substrate, a first adhesive layer over the spacer, a lens aligned with the image sensor IC and over the first adhesive layer, a second adhesive layer surrounding a peripheral surface of the lens and the first adhesive layer, and a baffle over the lens and the second adhesive layer.

Abstract: A solar cell includes a photoelectric conversion body including one principal surface provided with a p-type surface and an n-type surface, a p-side electrode disposed on the p-type surface, an n-side electrode disposed on the n-type surface, and an insulating layer disposed between the p-side electrode and the n-side electrode and including a convex shaped surface.

Abstract: There is provided a solid state imaging apparatus, including: an optical film layer on which a solid state image sensor is mounted; a multifunctional chip laminated at a periphery of the solid state image sensor in the optical film layer being electrically contacted with the optical film layer via a metal body; a sealing resin layer for sealing the periphery where the multifunctional chip is laminated on the optical film layer; and a concave structure for blocking a flow of the sealing resin in a liquid state when the sealing resin layer is formed at the periphery of the sealing resin layer. Also, a method of producing the solid state imaging apparatus is also provided.

Abstract: An image sensor assembly includes an image sensor die attached adjacent to a cavity and a lower surface in a preformed package having substantially vertical surfaces extending from the lower surface to an upper surface of the package. The image sensor die provides the light receiving surface for capturing the image. A light absorbing layer is applied to a cover such that the light absorbing layer prevents light from falling on the substantially vertical surfaces of the preformed package without preventing the passage of light that falls on the light receiving surface of the image sensor die. The light absorbing layer includes openings that provide a line-of-sight view of two opposing corners of at least one of the light receiving surface and the image sensor die to facilitate placing the cover over the upper surface of the package in registry with the image sensor die.

Abstract: A converter plate adapted to be attached to a radiation-emitting semiconductor chip, the converter plate containing a base material made of glass in which a plurality of openings is arranged, in each of which a converter material is installed.

Abstract: The present invention relates to a silicon solar cell module comprising electrodes formed from conductive paste. In the invention, front electrode finger lines and front electrode bus bars are separately formed. The front electrode finger lines are formed by printing a silver paste and calcining the printed silver paste at high temperature, and rear electrode bus bars and front electrode bus bars are formed from an inexpensive lower-temperature conductive paste including a buffer and a curing agent having reducing power, whereby the expensive silver paste is replaced with the inexpensive low-temperature conductive paste, thereby reducing the production cost.

Abstract: The light concentrator having a primary optical element which has an optical axis and a core comprising a rigid body which is co-linear with the optical axis and configured to support the primary optical element.

Abstract: A flexible solar module strand manufactured by a method including providing a first conveyor track for applying flexible solar cells; guiding the first conveyor track around two or more deflecting means; providing individual flexible solar cells; applying the individual solar cells to the first conveyor track; deflecting the first conveyor track by guiding the first conveyor track over a first one of the deflecting means; separating the first conveyor track from the at least one deflected solar cell strip in such a manner that the solar cells are released, with their respective first or second sides facing the first conveyor track, from the first conveyor track; and applying the at least one deflected solar cell strip to a first film web in such a manner that the solar cells are oriented, with their respective first or second sides separated from the first conveyor track, away from the first film web.

Abstract: A method of manufacturing a radiation detection apparatus, includes a bonding step of bonding, on a support substrate, a sensor substrate including a photoelectric converter in which a plurality of photoelectric conversion elements are arranged, by using a bonding layer including a passage which exhausts a gas between the support substrate and the sensor substrate, and a formation step of forming a scintillator layer on the photoelectric converter after the bonding step. The bonding layer has a heat resistance by which bonding between the support substrate and the sensor substrate by the bonding layer is maintained in the formation step.

Abstract: Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities.

Abstract: Light receiving elements of a back connection type including first and second electrodes on their back sides are connected by an inter-element connecting body including a tabular main body section and an inter-element connecting section to form a light receiving element module. The main body section is selectively directly connected to the first electrode and arranged on the second electrode via an insulating layer. The main body section covers substantially the entire back side of each of the light receiving elements excluding a part of the second electrode. The second electrode is connected to the inter-element connecting section of an adjacent light receiving element. The main body section forms a reflecting section between the main body section and the light receiving element to enable reflected light to be made incident on the light receiving element from a gap between the first and second electrodes.

Abstract: A method of manufacturing a photoelectric conversion device includes: forming a first electrode on a first surface side of a substrate that has two opposing surfaces; forming an electrode section on a second surface side of the substrate, the electrode section being used for external connection; and after forming the first electrode and the electrode section, forming an organic photoelectric conversion layer and a second electrode on the first electrode.

Abstract: An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary method of fabricating an electronic device comprises: depositing one or more first conductors; and depositing a plurality of diodes suspended in a mixture of a first solvent and a viscosity modifier. Various exemplary diodes have a lateral dimension between about 10 to 50 microns and about 5 to 25 microns in height. Other embodiments may also include a plurality of substantially chemically inert particles having a range of sizes between about 10 to about 50 microns.

Abstract: A stacked wafer structure includes a CIS wafer, an ISP wafer, a lamination layer, a through silicon via and a pixel device. The CIS wafer bonds to the ISP wafer through the lamination layer. The pixel device is disposed on the CIS wafer. The through silicon via penetrates either the CIS wafer or the ISP wafer to connect devices in CIS wafer to the devices in ISP wafer electrically.

Abstract: A photodetector with a bandwidth-tuned cell structure is provided. The photodetector is fabricated from a semiconductor substrate that is heavily doped with a first dopant. A plurality of adjoining cavities is formed in the semiconductor substrate having shared cell walls. A semiconductor well is formed in each cavity, moderately doped with a second dopant opposite in polarity to the first dopant. A layer of oxide is grown overlying the semiconductor wells and an annealing process is performed. Then, metal pillars are formed that extend into each semiconductor well having a central axis aligned with an optical path. A first electrode is connected to the metal pillar of each cell, and a second electrode connected to the semiconductor substrate. The capacitance between the first and second electrodes decreases in response to forming an increased number of semiconductor wells with a reduced diameter, and forming metal pillars with a reduced diameter.

Abstract: A photovoltaic power module including a reflector, and methods for manufacturing the reflector. The photovoltaic power module includes a plurality of photovoltaic cells arranged in an array, including a photon source facing surface having a plurality of active areas that convert photons to electrical energy and a plurality of inactive areas that do not convert photons to electrical energy. The reflector covers at least one inactive area of a photon source facing surface, for reflecting photons that would otherwise have fallen on the inactive area onto an active area. The output of the photovoltaic power module may therefore be increased.

Abstract: A packaged sensor assembly and method of forming that includes a first substrate having opposing first and second surfaces and a plurality of conductive elements each extending between the first and second surfaces. A second substrate comprises opposing front and back surfaces, one or more detectors formed on or in the front surface, and a plurality of contact pads formed at the front surface which are electrically coupled to the one or more detectors. A third substrate is mounted to the front surface to define a cavity between the third substrate and the front surface, wherein the third substrate includes a first opening extending from the cavity through the third substrate. The back surface is mounted to the first surface. A plurality of wires each extend between and electrically connecting one of the contact pads and one of the conductive elements.

Abstract: A method of assembling an optical element on top of an active component in a substrate, by providing a substrate with active component and an optical element with a base and lateral base walls, fixating a bottom surface of a frame holder with opening and lateral frame walls arranged in a polygonal structure to the substrate so that the opening is positioned over the active component, and mounting the optical element in the opening so the lateral frame walls apply lateral confining mechanical force on the lateral base walls.

Abstract: Embodiments of the invention relate to a camera assembly including a rear-facing camera and a front-facing camera operatively coupled together (e.g., bonded, stacked on a common substrate). In some embodiments of the invention, a system having an array of frontside illuminated (FSI) imaging pixels is bonded to a system having an array of backside illuminated (BSI) imaging pixels, creating a camera assembly with a minimal size (e.g., a reduced thickness compared to prior art solutions). An FSI image sensor wafer may be used as a handle wafer for a BSI image sensor wafer when it is thinned, thereby decreasing the thickness of the overall camera module. According to other embodiments of the invention, two package dies, one a BSI image sensor, the other an FSI image sensor, are stacked on a common substrate such as a printed circuit board, and are operatively coupled together via redistribution layers.

Abstract: An embodiment of the invention discloses a manufacture method of a sensor comprising: preparing gate scanning lines on a substrate; depositing a gate insulating layer on the gate scanning lines; sequentially depositing a gate insulation thin film, an active layer thin film, an ohmic contact layer thin film, a first conducting layer thin film and a photoelectric conversion layer thin film, and after the depositing, processing a lamination structure of the thin films with a gray-tone mask plate to obtain switch devices and photoelectric sensing devices; and then sequentially preparing a first passivation layer, bias lines and a second passivation layer.

Abstract: A solar cell module includes a solar cell, a light-receiving surface member arranged on a light-receiving surface side of the solar cell, a rear surface member arranged on a rear surface side of the solar cell, a transparent filler layer arranged between the solar cell and the light-receiving surface member, and a colored filler layer arranged between the solar cell and the rear surface member. The colored filler layer exists on at least part of a portion of the light receiving surface of the solar cell, the portion located over a non-power generation region.

Abstract: A solid-state imaging device includes: a pixel section including, in a semiconductor substrate, plural photoelectric conversion sections that photoelectrically convert incident light to generate signal charges; metal wirings formed, on a first insulating film formed on the semiconductor substrate, above regions among the photoelectric conversion sections and above the periphery of the pixel section; a second insulating film formed on the first insulating film to cover the metal wirings; a first light shielding film formed on the second insulating film and having an opening above the pixel section; and a second light shielding film formed above the metal wirings above the pixel section and having thickness smaller than that of the first light shielding film.

Abstract: An image sensor package includes an image sensor chip and crystalline handler. The image sensor chip includes a substrate, and a plurality of photo detectors and contact pads at the front surface of the substrate. The crystalline handler includes opposing first and second surfaces, and a cavity formed into the first surface. A compliant dielectric material is disposed in the cavity. The image sensor front surface is attached to the crystalline substrate handler second surface. A plurality of electrical interconnects each include a hole aligned with one of the contact pads, with a first portion extending from the second surface to the cavity and a second portion extending through the compliant dielectric material, a layer of insulation material formed along a sidewall of the first portion of the hole, and conductive material extending through the first and second portions of the hole and electrically coupled to the one contact pad.

Abstract: A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.

Abstract: The optical device comprises a first substrate (SI) comprising at least one optical structure (1) comprising a main portion (2) and a surrounding portion (3) at least partially surrounding said main portion. The device furthermore comprises non-transparent material (5, 5a, 5b) applied onto said surrounding portion. The opto-electronic module comprises a plurality of these optical devices comprised in said first substrate. The method for manufacturing an optical device comprises the steps of a) providing a first substrate comprising at least one optical structure comprising a main portion and a surrounding portion at least partially surrounding said main portion; and b) applying a non-transparent material onto at least said surrounding portion. Said non-transparent material is present on at least said surrounding portion still in the finished optical device.

Abstract: A solar cell includes: a substrate having heat dissipating characteristics; a solar cell bonded to the substrate such that the solar cell is electrically connected on a first conductive line and a second conductive line, which are disposed on a surface of the substrate; a lens, which is bonded to a transparent electrode of the solar cell; a plurality of projections, which maintain a gap between the substrate and the lens; tapered hole sections in the substrate, each of said tapered hole sections having a tapered section of each of the protruding sections fitted therein; and a sealing resin applied to the gap.

Abstract: A glass-silicon wafer stacked platform.

Abstract: The present disclosure provides an image sensor device and a method for manufacturing the image sensor device. An exemplary image sensor device includes a substrate having a front surface and a back surface; a plurality of sensor elements disposed at the front surface of the substrate, each of the plurality of sensor elements being operable to sense radiation projected towards the back surface of the substrate; a radiation-shielding feature disposed over the back surface of the substrate and horizontally disposed between each of the plurality of sensor elements; a dielectric feature disposed between the back surface of the substrate and the radiation-shielding feature; and a metal layer disposed along sidewalls of the dielectric feature.

Abstract: In method of manufacturing a light emitting device, a substrate is provided, and metallization is established on an upper surface of the substrate. A light emitting element is mounted on top of the metallization, and the metallization and light emitting element are electrically connected. The surfaces of metallization and at least side surface of the light emitting element are continuously covered with insulating material. Light reflective resin is provided over the insulating material at a position surrounding the light emitting element to reflect light from the light emitting element.

Abstract: Planar lightwave circuits with a polymer coupling waveguide optically coupling a planar waveguide over a first region of a substrate to an optical component, such as a laser, affixed to a second region of the substrate. The coupling waveguide may be formed from a polymer layer applied over the planar waveguide and optical component such that any misalignment between the two may be accommodated by patterning the polymer into a waveguide having a first end aligned to an end of the planar waveguide and a second end aligned to an edge of the optical component. In embodiments, the polymer is photo-definable, such as a negative resist, and may be patterned through direct laser writing. In embodiments, the optical component is a thin film affixed to the substrate through micro-transfer printing. In other embodiments, the optical component is a semiconductor chip affixed to the substrate by flip-chip bonding.

Abstract: An apparatus for use in optoelectronics includes a first alignment element and a first wafer comprising a through optical via. The first alignment element is bonded to the first wafer, such that the through optical via is uncovered by the first alignment element. In addition, the first wafer further comprises a plurality of bond pads upon which an optoelectronic component having an optical element is to be attached, in which the first alignment element is to mate with a mating alignment element on an optical transmission medium, and wherein the optical transmission medium is to be passively aligned with the optical element through the through optical via when the first alignment element is mated with the mating alignment element on the optical transmission medium.

Abstract: An opto-electric device has a substrate comprised of metal or plastic. The substrate in an uncoated condition has an average surface roughness Rz of 150 nm to 1500 nm. A dielectric coating coats the substrate and a non-thermally curable coating is directly on the dielectric coating. An electrode is on the non-thermally curable coating. The dielectric coating and the non-thermally curable coating are between the electrode and the substrate.

Abstract: A radiation imager including: a reading block; a first substrate; a plurality of portions made from a first material with a first optical index between the first substrate and the reading block; a second material at a periphery of at least one of the portions, the second material having a second optical index lower than the first optical index; and areas made from a third material surrounding at least ends of the portions oriented on a same side as the reading block, the areas made from a third material obtained by applying a layer made from a third material to the reading block and penetration of the end of the at least one portion made from a first material in the layer made from a third material.