Having Reflective Or Antireflective Component Patents (Class 438/72)
  • Patent number: 10680122
    Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a substrate, an emitter layer at a front surface of the substrate, a first anti-reflection layer on the emitter layer, a back surface field layer at a back surface of the substrate, and a second anti-reflection layer on the back surface field layer. The first anti-reflection layer and the second anti-reflection layer overlap may each other.
    Type: Grant
    Filed: January 10, 2011
    Date of Patent: June 9, 2020
    Assignee: LG Electronics Inc.
    Inventors: Philwon Yoon, Changseo Park, Yoonsil Jin, Jinsung Kim, Goohwan Shim, Youngho Choe, Jaewon Chang
  • Patent number: 10593818
    Abstract: A multijunction solar cell includes a base substrate comprising a Group IV semiconductor and a dopant of a first carrier type. A patterned emitter is formed at a first surface of the base substrate. The patterned emitter comprises a plurality of well regions doped with a dopant of a second carrier type in the Group IV semiconductor. The base substrate including the patterned emitter form a first solar subcell. The multijunction solar cell further comprises an upper structure comprising one or more additional solar subcells over the first solar subcell. Methods of making a multijunction solar cell are also described.
    Type: Grant
    Filed: December 9, 2016
    Date of Patent: March 17, 2020
    Assignee: THE BOEING COMPANY
    Inventors: Christopher M. Fetzer, Peter Hebert
  • Patent number: 10343945
    Abstract: In a process for obtaining a transparent substrate including a refractive index modulation pattern, a transparent substrate is irradiated with a laser radiation focused on the substrate in the form of at least one laser line, where the substrate at least partially absorbs the laser radiation, a relative movement is generated between the substrate and the laser line focused on the substrate, in a direction (X) transverse to the longitudinal direction (Y) of the laser line, and, in the course of this relative movement, the power of the laser line is temporally modulated as a function of the speed of the relative movement and as a function of the dimensions of the pattern in the direction (X) of the relative movement.
    Type: Grant
    Filed: May 21, 2014
    Date of Patent: July 9, 2019
    Assignee: SAINT-GOBAIN GLASS FRANCE
    Inventors: Emmanuel Mimoun, Brice Dubost
  • Patent number: 10297752
    Abstract: A rectifier is provided for converting an oscillating electromagnetic field into a direct current and comprises an electrically conductive antenna layer configured to absorb electromagnetic radiation, an electrically conductive mirror layer configured to provide an electromagnetic mirror charge of the antenna layer, an electrically insulating tunnel barrier layer positioned between the antenna layer and the mirror layer, and an electronic circuit electrically connected between the conductive mirror layer and the conductive antenna layer. The rectifier employs a metamaterial configuration for room temperature rectification of radiation in regions of the electromagnetic spectrum comprising the MWIR and LWIR regions. Methods for use of the rectifier in rectifying and detecting radiation are described.
    Type: Grant
    Filed: August 5, 2017
    Date of Patent: May 21, 2019
    Assignee: NANOHMICS, INC.
    Inventors: Chris W. Mann, Kyle W. Hoover, Gennady Shvets
  • Patent number: 10176982
    Abstract: The present invention proposes a method to form a gradient thin film using a spray pyrolysis technique. The method comprises providing a base substrate, preparing a spray aqueous solution by mixing at least two precursor compounds comprising at least two different elements and spraying the spray aqueous solution onto the base substrate. According to the present invention, the ratio of the concentration of the at least two different elements within the spray aqueous solution is varied while performing the method. In this way, a thin film having a gradient of elemental composition over its layer thickness may be formed.
    Type: Grant
    Filed: December 15, 2015
    Date of Patent: January 8, 2019
    Assignees: CHINA TRIUMPH INTERNATIONAL ENGINEERING CO., LTD., CTF SOLAR GMBH
    Inventors: Velappan Krishnakumar, Harr Michael
  • Patent number: 10090428
    Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell may include a substrate, an emitter layer positioned at a first surface of the substrate, a first anti-reflection layer that is positioned on a surface of the emitter layer and may include a plurality of first contact lines exposing a portion of the emitter layer, a first electrode that is electrically connected to the emitter layer exposed through the plurality of first contact lines and may include a plating layer directly contacting the emitter layer, and a second electrode positioned on a second surface of the substrate.
    Type: Grant
    Filed: January 2, 2014
    Date of Patent: October 2, 2018
    Assignee: LG ELECTRONICS INC.
    Inventors: Goohwan Shim, Changseo Park, Philwon Yoon, Yoonsil Jin, Jinsung Kim, Youngho Choe, Jaewon Chang
  • Patent number: 10062797
    Abstract: A simple manufacturing method is provided for the fabrication of the IV-VI group of semiconductor films on inexpensive substrates for highly efficient tandem or multi junction solar cells and a variety of other electronic devices such as transistors and LEDs. Specifically, the method includes depositing a textured oxide buffer on a substrate; depositing a metal-inorganic film from a eutectic alloy on the buffer layer, the metal being a component of a IV-VI compound; and forming a layer on the metal-inorganic film on which an additional element from the IV-VI compound is added, forming a IV-VI layer on a semiconductor device. The films comprising tin sulfides—SnS (tin sulphide), SnS2, and SnS3—are grown on inexpensive substrates, such as glass or flexible plastic, at low temperature, allowing for R2R (roll-to-roll) processing.
    Type: Grant
    Filed: July 19, 2016
    Date of Patent: August 28, 2018
    Assignee: Solar-Tectic LLC
    Inventor: Ashok Chaudhari
  • Patent number: 10025191
    Abstract: There is provided a polymer-containing coating liquid which is applied to a resist pattern and which is used in place of a conventional rinsing liquid. A coating liquid that is applied to a resist pattern comprising a polymer having a structural unit of Formula (1): (wherein R1 is a C1-12 organic group, and X is an organic group of Formula (2): (wherein R2 and R3 are each independently a linear or branched alkylene group having a carbon atom number of 1 to 3, R2 is bonded to an oxygen atom in Formula (1), R4 is a C1-4 alkoxy group, an allyloxy group, or a hydroxy group, and p is 0, 1, or 2)), and a solvent containing water and/or alcohols.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: July 17, 2018
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Shuhei Shigaki, Yasushi Sakaida, Rikimaru Sakamoto
  • Patent number: 10002892
    Abstract: The present invention relates to a solid-state imaging device. In a pixel array section in the solid-state imaging device, a vertical signal line is provided right under power supply wiring apart from a floating diffusion region in order to reduce load capacitance of the vertical signal line. Furthermore, the power supply wiring is wired to make a cover rate of each vertical signal line with respect to the power supply wiring nearly uniform. As a result, it is possible to suppress variation of load capacitance of the vertical signal line for each pixel. It becomes possible to suppress deviation in a black level, variation of charge transfer, and variation of settling. It becomes possible to obtain an image with higher quality.
    Type: Grant
    Filed: September 27, 2016
    Date of Patent: June 19, 2018
    Assignee: Sony Corporation
    Inventors: Yusuke Uesaka, Atsuhiko Yamamoto
  • Patent number: 9985119
    Abstract: An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer disposed above the photodiode, a dielectric region disposed above the antireflection layer, an optical filter disposed above the dielectric region, and a diffraction grating disposed in the antireflection layer. The diffraction grating includes an array of pads.
    Type: Grant
    Filed: April 17, 2017
    Date of Patent: May 29, 2018
    Assignees: STMICROELECTRONICS S.A., STMICROELECTRONICS (Crolles 2) SAS
    Inventors: Axel Crocherie, Michel Marty, Jean-Luc Huguenin, Sébastien Jouan
  • Patent number: 9923116
    Abstract: A method for producing a solar cell is described, in which a plurality of doped regions are to be etched-back selectively or over their entire surface. Once a semiconductor substrate (1) has been provided, various doped regions (3, 5) are formed in partial regions of a surface of the semiconductor substrate, the various doped regions (3, 5) differing as regards their doping concentration and/or their doping polarity. The various doped regions (3, 5) are then purposively etched-back in order to achieve desired doping profiles, and finally electrical contacts (21) are formed at least at some of the doped regions (3, 5). The etching-back of the various doped regions takes place in a common etching operation in an etching medium.
    Type: Grant
    Filed: March 11, 2015
    Date of Patent: March 20, 2018
    Assignee: UNIVERSITÄT KONSTANZ
    Inventors: Josh Engelhardt, Alexander Frey, Yvonne Schiele, Barbara Terheiden
  • Patent number: 9773668
    Abstract: Provided is a method of forming a transition metal chalcogenide thin-film and the method includes preparing a first substrate having formed thereon a transition metal-containing precursor thin-film; displacing a second substrate separately with a constant distance from the first substrate by using a bridge unit while the second substrate is facing the first substrate, thereby securing a gas flowing path between the first substrate and the second substrate; heating the first and second substrates to a reaction temperature; and introducing a chalcogen-containing gas from an end of a reactor, such that the chalcogen-containing gas flows via the path.
    Type: Grant
    Filed: July 8, 2016
    Date of Patent: September 26, 2017
    Assignee: UNIVERSITY-INDUSTRY FOUNDATION (UIF), YONSEI UNIVERSITY
    Inventors: Gwan Hyoung Lee, So Jung Kang, Seung Min Lee, Yong Soo Cho
  • Patent number: 9548404
    Abstract: Provided is a method for fabricating anti-reflection film with anti-PID effect. The method comprises: vacuuming a furnace tube, holding the temperature in the furnace at 420° C. and the pressure as 80 mTorr for 4 minutes; pretreating silicon wafers at 420° C. with a nitrous oxide flux of 3.8-4.4 slm and pressure of 1700 mTorr for 3 minutes; testing pressure to keep a inner pressure of the furnace tube as a constant value of 50 mTorr for 0.2-0.5 minute; pre-depositing at 420° C., with a ammonia gas flux of 0.1-0.5 slm, a silane flux of 180 sccm-200 sccm, a nitrous oxide flux of 3.5-4.1 slm, pressure of 1000 mTorr and radio frequency power of 4300 w for 0.3-0.5 minute; depositing a film at 450° C., with a ammonia gas flux of 2000-2200 sccm, a silane flux of 7000-7500 sccm, a nitrous oxide flux of 2-2.4 slm, pressure of 1700 mTorr and radio frequency power of 4300 w for 3 minutes; blowing and cooling the film at 420° C. with a nitrogen gas flux of 6-10 slm, pressure of 10000 mTorr for 5-8 minutes.
    Type: Grant
    Filed: June 20, 2013
    Date of Patent: January 17, 2017
    Assignee: DONGFANG ELECTRIC (YIXING) MAGI SOLAR POWER TECHNOLOGY CO., LTD
    Inventors: Lun Huang, Chunhui Lu, Junqing Wu, Zerong Hou, Jinwei Wang
  • Patent number: 9502486
    Abstract: An organic light-emitting diode (OLED) display having thin film transistors (TFTs) is disclosed. In one aspect, TFTs of the OLED display include a substrate and a first semiconductor layer formed over the substrate and including first channel, source, and drain regions and a lightly doped region between the first channel region and the first source and drain regions. The OLED display also includes a second semiconductor layer formed over the substrate and including second channel, source, and drain regions. The OLED display further includes first and second gate electrodes formed over the first semiconductor layer and a third gate electrode formed over the second semiconductor layer. The width of the second gate electrode is less than that of the first gate electrode and the lightly doped region overlaps a portion of the first gate electrode and does not overlap the second gate electrode.
    Type: Grant
    Filed: February 11, 2016
    Date of Patent: November 22, 2016
    Assignee: Samsung Display Co., Ltd.
    Inventors: Wang Woo Lee, Moo Soon Ko, Min Woo Woo, Il Jeong Lee, Jeong Ho Lee
  • Patent number: 9472711
    Abstract: A back contact heterojunction photoelectric conversion device, that obtain junctions that are nearly ohmic contacts by integrally forming a transparent conductive film including an electrode directly on a p-type amorphous silicon film and a transparent conductive oxide directly on an n-type amorphous silicon film. A method of manufacturing the device includes: integrally forming an oxide electrode layer on the n-type amorphous silicon film and the p-type amorphous silicon film; and applying plasma, under a condition that a mask is disposed on the transparent conductive film covering either the n-type amorphous silicon film or the p-type amorphous silicon film, to exposed portions of transparent conductive film.
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: October 18, 2016
    Assignee: Mitsubishi Electric Corporation
    Inventors: Tsutomu Matsuura, Hiroya Yamarin, Hidetada Tokioka
  • Patent number: 9455294
    Abstract: An image sensor includes a substrate having a front side and a back side, an insulating structure containing circuits on the front side of the substrate, contact holes extending through the substrate to the circuits, respectively, and a plurality of pads disposed on the backside of the substrate, electrically connected to the circuits along conductive paths extending through the contact holes, and located directly over the circuits, respectively. The image sensor is fabricated by a process in which a conductive layer is formed on the back side of the substrate and patterned to form the pads directly over the circuits.
    Type: Grant
    Filed: December 8, 2014
    Date of Patent: September 27, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-Ho Kim, Young-Hoon Park
  • Patent number: 9388114
    Abstract: Compositions comprising an alkyl 3-hydroxybutyrate and one or more additional components are provided. The compositions of the present invention may include at least one alkyl 3-hydroxybutyrate having at least 3 and not more than 5 carbon atoms, along with one or more additional components including, for example, alkyl butyrates, alkyl acetates, alkyl alcohols, and dimers and/or trimers of the alkyl 3-hydroxybutyrate. Such compositions may be products of, for example, the hydrogenation of an acetoacetate-containing composition.
    Type: Grant
    Filed: August 2, 2013
    Date of Patent: July 12, 2016
    Assignee: Eastman Chemical Company
    Inventors: Garry Kenneth Weakley, Charles Everette Kelly, Therese T. Golob
  • Patent number: 9305966
    Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: April 5, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Keng-Yu Chou, Shuang-Ji Tsai, Min-Feng Kao
  • Patent number: 9246024
    Abstract: A photovoltaic device is provided that includes a semiconductor substrate including a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one on top of the other. A plurality of patterned antireflective coating layers is located on a p-type semiconductor surface of the semiconductor substrate, wherein at least one portion of the p-type semiconductor surface of the semiconductor substrate is exposed. Aluminum is located directly on the at least one portion of the p-type semiconductor surface of the semiconductor substrate that is exposed.
    Type: Grant
    Filed: July 14, 2011
    Date of Patent: January 26, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Kathryn C. Fisher, Qiang Huang, Satyavolu S. Papa Rao, Ming-Ling Yeh
  • Patent number: 9209342
    Abstract: Processes for making light to current converter devices are provided. The processes can be used to make light to current converter devices having P-N junctions located on only the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, located on the top surface and full inner surface of the via holes, or located on the top surface, full inner surface of the via holes, and a portion of the bottom surface of the cell. The processes may isolate the desired P-N junction by etching the emitter, forming a via hole after forming the emitter, using a barrier layer to protect portions of the emitter from etching, or using a barrier layer to prevent the emitter from being formed on portions of the substrate.
    Type: Grant
    Filed: October 17, 2014
    Date of Patent: December 8, 2015
    Assignee: CSI CELLS CO., LTD
    Inventors: Lingjun Zhang, Feng Zhang, Jian Wu, Xusheng Wang
  • Patent number: 9178086
    Abstract: A method for fabricating back-contact type solar cells is provided. The method comprises forming a plurality of n-type doped zones, a plurality of p-type doped zones, and a back anti-reflection layer on a back surface of a semiconductor substrate. The lead-containing conductive paste may pass through the back anti-reflection layer and connect to the n-type doped zones and the p-type doped zones thereby being regarded as n-type electrodes and p-type electrodes.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: November 3, 2015
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Yen-Cheng Hu, Jen-Chieh Chen, Zhen-Cheng Wu
  • Patent number: 9136406
    Abstract: A solar cell structure using either a dye-sensitized or organic absorber is provided with a diffraction grating on at least one side to enhance the travel of first order diffraction components through the photo sensitive material. A two-sided cell uses diffraction gratings both top and bottom wherein the periodic diffraction elements of one grating are shifted by one-quarter of the grating period relative to the other.
    Type: Grant
    Filed: July 7, 2010
    Date of Patent: September 15, 2015
    Assignee: Toyota Motor Engineering & Manufacturing North America, Inc.
    Inventors: Hideo Iizuka, Yasuhiko Takeda, Hisayoshi Fujikawa
  • Patent number: 9111659
    Abstract: Electrodes of a solar cell formed by an active solder and a method therefor are provided. The method includes steps of: providing a solar cell substrate; providing an active solder having at least one type of soldering alloy mixed with 6 wt % or less of at least one type of active component and 0.01-2.0 wt % of at least one type of rare earth element (Re); firstly melting the active solder at a temperature lower than 450° C.; then applying the molten active solder on the solar cell substrate (or firstly applying and then melting); and cooling to solidify the active solder, so as to form an electrode pattern.
    Type: Grant
    Filed: June 29, 2012
    Date of Patent: August 18, 2015
    Assignee: NATIONAL PINGTUNG UNIVERSITY OF SCIENCE & TECHNOLOGY
    Inventor: Lung-chuan Tsao
  • Patent number: 9105551
    Abstract: A method for making an imager device including the implementation of the steps of: making, through a layer of electric insulating material within which are made one or more pixels each including an antenna able to pick up an electromagnetic wave received at said pixel, of an aperture forming an access to a layer of sacrificial material provided between the layer of electric insulating material and a reflective layer able to reflect said electromagnetic wave; removing part of the layer of sacrificial material through the aperture, forming between the reflective layer and the layer of electric insulating material at least one optical cavity.
    Type: Grant
    Filed: February 12, 2014
    Date of Patent: August 11, 2015
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventor: Cecilia Dupre
  • Patent number: 9105546
    Abstract: An imaging system may include an image sensor having backside illuminated near infrared image sensor pixels. Each pixel may be formed in a graded epitaxial substrate layer such as a graded n-type epitaxial layer. Each pixel may be separated from an adjacent pixel by an isolation trench formed in the graded epitaxial layer. The isolation trench may be a continuous isolation trench or may be formed from a combined front side isolation trench and backside isolation trench that are separated by a wall structure. A buried front side reflector may be provided that reflects light such as infrared light that has passed through a pixel back into the pixel, thereby effectively doubling the silicon absorption depth of the pixels.
    Type: Grant
    Filed: July 30, 2013
    Date of Patent: August 11, 2015
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Sergey Velichko, Gennadiy Agranov
  • Patent number: 9099607
    Abstract: A solar cell is discussed. The solar cell according to an embodiment includes a substrate of a first conductive type, an emitter layer of a second conductive type opposite the first conductive type, which forms a p-n junction along with the substrate, a first anti-reflection layer on the emitter layer, a second anti-reflection layer on the first anti-reflection layer, a first electrode part connected to the emitter layer, and a second electrode part connected to the substrate. The first anti-reflection layer is formed of silicon nitride, and the second anti-reflection layer is formed of silicon oxide.
    Type: Grant
    Filed: February 24, 2011
    Date of Patent: August 4, 2015
    Assignee: LG ELECTRONICS INC.
    Inventors: Hyunho Lee, Junyong Ahn, Jiweon Jeong
  • Patent number: 9077880
    Abstract: An image capturing module includes an image sensing unit and an optical auxiliary unit. The image sensing unit includes a carrier substrate, an image sensing chip disposed on the carrier substrate and electrically connected to the carrier substrate, a microlens array substrate disposed on the image sensing chip, and a nonconductive photosensitive film layer disposed on the microlens array substrate for increasing the light absorption capability. The optical auxiliary unit includes a housing frame and a movable lens assembly. The housing frame is disposed on the carrier substrate to cover the image sensing chip, the microlens array substrate and the nonconductive photosensitive film layer, and the movable lens assembly is movably disposed in the housing frame.
    Type: Grant
    Filed: September 17, 2013
    Date of Patent: July 7, 2015
    Assignee: LITE-ON TECHNOLOGY CORPORATION
    Inventor: Charles Ian Daduya Ferraris
  • Publication number: 20150144197
    Abstract: A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.
    Type: Application
    Filed: February 4, 2015
    Publication date: May 28, 2015
    Inventors: Peter J. Cousins, David D. Smith, Seung Bum Rim
  • Publication number: 20150145082
    Abstract: A backside-illuminated photodetector structure comprising a first reflecting region, a second reflecting region and a semiconductor region. The semiconductor region is between the first reflecting region and the second reflecting region. The semiconductor region comprises a first doped region and a second doped region.
    Type: Application
    Filed: November 22, 2013
    Publication date: May 28, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company, ltd.
    Inventors: Wan-Yu LEE, Ying-Hao KUO
  • Publication number: 20150136215
    Abstract: A solar cell device and a method of fabricating the same is described. The solar cell includes a back contact, an absorber over the back contact, and a front contact over the absorber. The back contact includes a back electrode layer and a graphene layer.
    Type: Application
    Filed: November 21, 2013
    Publication date: May 21, 2015
    Applicant: TSMC SOLAR LTD.
    Inventors: Chia-Hung TSAI, Tzu-Huan CHENG
  • Publication number: 20150137300
    Abstract: An infrared sensor device includes a semiconductor substrate, at least one sensor element that is micromechanically formed in the semiconductor substrate, and at least one calibration element, which is micromechanically formed in the semiconductor substrate, for the sensor element. An absorber material is arranged on the semiconductor substrate in the area of the sensor element and the calibration element. One cavern each is formed in the semiconductor substrate substantially below the sensor element and substantially below the calibration element. The sensor element and the calibration element are thermally and electrically isolated from the rest of the semiconductor substrate by the caverns. The infrared sensor device has high sensitivity, calibration functionality for the sensor element, and a high signal-to-noise ratio.
    Type: Application
    Filed: April 19, 2013
    Publication date: May 21, 2015
    Inventors: Ingo Herrmann, Edda Sommer, Christoph Schelling, Christian Rettig, Mirko Hattass
  • Publication number: 20150136210
    Abstract: Solar devices with high resistance to light-induced degradation are described. A wide optical bandgap interface layer positioned between a p-doped semiconductor layer and an intrinsic semiconductor layer is made resistant to light-induced degradation through treatment with a hydrogen-containing plasma. In one embodiment, a p-i-n structure is formed with the interface layer at the p/i interface. Optionally, an additional interface layer treated with a hydrogen-containing plasma is formed between the intrinsic layer and the n-doped layer. Alternatively, a hydrogen-containing plasma is used to treat an upper portion of the intrinsic layer prior to deposition of the n-doped semiconductor layer. The interface layer is also applicable to-multi-junction solar cells with plural p-i-n structures. The p-doped and n-doped layers can optionally include sublayers of different compositions and different morphologies (e.g., microcrystalline or amorphous).
    Type: Application
    Filed: May 10, 2013
    Publication date: May 21, 2015
    Inventors: Xavier Multone, Daniel Borrello, Stefano Benagli, Johannes Meier, Ulrich Kroll, Marian Fecioru-Morariu
  • Publication number: 20150132883
    Abstract: The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.
    Type: Application
    Filed: January 20, 2015
    Publication date: May 14, 2015
    Applicant: FUDAN UNIVERSITY
    Inventors: Pengfei Wang, Xi Lin, Wei Wang, Xiaoyong Liu, Wei Zhang
  • Publication number: 20150129026
    Abstract: The present invention relates to an emitter wrap-through solar cell and a method for preparing the same. The solar cell according to the present invention has a structure that may minimize generation of leakage current and minimize energy conversion efficiency measurement error. And, the preparation method of a solar cell according to the present invention may easily confirm the alignment state of the electrode, and thus, provide more improved productivity.
    Type: Application
    Filed: May 14, 2013
    Publication date: May 14, 2015
    Applicant: Hanwha Chemical Corporation
    Inventors: Woo-Won Jung, Jae Eock Cho, Hong Gu Lee, Deoc Hwan Hyun, Yong Hwa Lee
  • Publication number: 20150132884
    Abstract: A method of forming an image sensor device where the method includes forming a first dielectric layer on a substrate. The method further includes patterning the first dielectric layer to define an area for a reflective shield, where the area defined for the reflective shield is above a photodiode. Additionally, the method includes forming the reflective shield on the substrate by filling the defined area with a high reflectivity material, and the high reflective material comprises a polymer.
    Type: Application
    Filed: January 22, 2015
    Publication date: May 14, 2015
    Inventors: Yu-Hao SHIH, Szu-Ying CHEN, Hsing-Lung CHEN, Jen-Cheng LIU, Dun-Nian YAUNG, Volume CHIEN
  • Patent number: 9029186
    Abstract: A method for forming an electrode of a solar battery on an electrode forming face of a semiconductor substrate, comprises: applying a resin containing a conductor material to be the electrode onto an electrode forming region of the electrode forming face; causing a pattern transfer member, on which a reverse pattern obtained by reversing a pattern of the electrode is formed, to face the electrode forming face, and registering the pattern transfer member on a position in which the electrode is to be formed in the electrode forming face; pressing the pattern transfer member against the electrode forming face to transfer the electrode pattern to the resin containing the conductor material; separating the pattern transfer member from the resin containing the conductor material; and baking the electrode pattern transferred to the resin containing the conductor material to form the electrode on the electrode forming face of the substrate.
    Type: Grant
    Filed: August 6, 2009
    Date of Patent: May 12, 2015
    Assignee: Mitsubishi Electric Coporation
    Inventor: Makoto Doi
  • Patent number: 9029970
    Abstract: Provided is a semiconductor light receiving device including: a semiconductor substrate; a semiconductor layer laminated on the semiconductor substrate and including an upper surface portion; a reflecting film formed to cover the upper surface portion of the semiconductor layer and including a principal reflecting region and an upper surface; and an upper electrode formed to cover at least one portion of the upper surface of the reflecting film, and including a junction portion extending through the reflecting file to be provided in contact with the upper surface portion of the semiconductor layer, the junction portion of the upper electrode surrounding a portion of a circumference of the principal reflecting region of the reflecting film, the principal reflecting region being connected to a region of the reflecting film located outside the junction portion, in which the semiconductor light receiving device detects light entering from another side of the semiconductor substrate.
    Type: Grant
    Filed: March 23, 2011
    Date of Patent: May 12, 2015
    Assignee: Oclaro Japan, Inc.
    Inventors: Ryu Washino, Yasushi Sakuma, Hiroshi Hamada
  • Patent number: 9024177
    Abstract: A solar cell includes a doped layer disposed on a first surface of a semiconductor substrate, a doped polysilicon layer disposed in a first region of a second surface of the semiconductor substrate, a doped area disposed in a second region of the second surface, and an insulating layer covering the doped polysilicon layer and the doped area. The insulating layer has openings exposing portions of the doped polysilicon layer and the doped layer, and the doped polysilicon layer and doped layer are respectively connected to a first electrode and a second electrode through the openings. The semiconductor substrate and the doped layer have a first doping type. One of the doped polysilicon layer and the doping area has a second doping type, and the other one of the doped polysilicon layer and the doping area has the first doping type which is opposite to the second doping type.
    Type: Grant
    Filed: April 10, 2013
    Date of Patent: May 5, 2015
    Assignee: AU Optronics Corp.
    Inventors: Peng Chen, Shuo-Wei Liang
  • Patent number: 9023681
    Abstract: The present invention discloses a method of fabricating a heterojunction battery, comprising the steps of: depositing a first amorphous silicon intrinsic layer on the front of an n-type silicon wafer, wherein the n-type silicon wafer may be a monocrystal or polycrystal silicon wafer; depositing an amorphous silicon p layer on the first amorphous silicon intrinsic layer; depositing a first boron doped zinc oxide thin film on the amorphous silicon p layer; forming a back electrode and an Al-back surface field on the back of the n-type silicon wafer; and forming a positive electrode on the front of the silicon wafer. In addition, the present invention further discloses a method of fabricating a double-sided heterojunction battery. In the present invention, the boron doped zinc oxide is used as an anti-reflection film in place of an ITO thin film; due to the special nature, especially the light trapping effect of the boron doped zinc oxide, the boron doped zinc oxide can achieve good anti-reflection.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: May 5, 2015
    Assignee: Chint Solar (Zhejiang) Co., Ltd.
    Inventors: Xinwei Niu, Cao Yu, Lan Ding, Junmei Rong, Shiyong Liu, Minghua Wang, Jinyan Hu, Weizhi Han, Yongmin Zhu, Hua Zhang, Tao Feng, Jianbo Jin, Zhanwei Qiu, Liyou Yang
  • Publication number: 20150114445
    Abstract: A solar cell device and a method of fabricating the same are described. The method of fabricating a solar cell includes forming a photovoltaic substructure including a substrate, back contact, absorber and buffer, forming a transparent cover separate from the photovoltaic substructure including a transparent layer and a plasmonic nanostructured layer in contact with the transparent layer, and adhering the transparent cover on top of the photovoltaic substructure. The plasmonic nanostructured layer can include metal nanoparticles.
    Type: Application
    Filed: October 25, 2013
    Publication date: April 30, 2015
    Applicant: TSMC SOLAR LTD.
    Inventors: Jyh-Lih WU, Wen-Tsai YEN, Wei-Lun XU
  • Publication number: 20150096609
    Abstract: A method of fabricating a photovoltaic device includes forming an absorber layer comprising an absorber material above a substrate, forming a buffer layer over the absorber layer, forming a front transparent layer over the buffer layer, and exposing the photovoltaic device to heat or radiation at a temperature from about 80° C. to about 500° C. for a period of time, subsequent to the step of forming a buffer layer over the absorber layer.
    Type: Application
    Filed: October 8, 2013
    Publication date: April 9, 2015
    Applicant: TSMC Solar Ltd.
    Inventor: Tzu-Huan CHENG
  • Patent number: 8999744
    Abstract: Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: April 7, 2015
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Mi-Ran Park, O-Kyun Kwon
  • Patent number: 8999813
    Abstract: A method of forming a focal plane array by: forming a first wafer having sensing material provided on a surface, which is covered by a sacrificial layer, the sensing material being a thermistor material defining at least one pixel; providing supporting legs for the pixel within the sacrificial layer, covering them with a further sacrificial layer and forming first conductive portions in the surface of the sacrificial layer that are in contact with the supporting legs; forming a second wafer having read-out integrated circuit (ROIC), the second wafer being covered by another sacrificial layer, into which is formed second conductive portions in contact with the ROIC; bringing the sacrificial oxide layers of the first wafer and second wafer together such that the first and second conductive portions are aligned and bonding them together such that the sensing material is transferred from the first wafer to the second wafer when a sacrificial bulk layer of the first wafer is removed; and removing the sacrificial l
    Type: Grant
    Filed: March 1, 2011
    Date of Patent: April 7, 2015
    Assignee: SensoNor AS
    Inventors: Adriana Lapadatu, Gjermund Kittilsland
  • Patent number: 8999740
    Abstract: A solar cell according to an embodiment of the invention includes a substrate configured to have a plurality of via holes and a first conductive type, an emitter layer placed in the substrate and configured to have a second conductive type opposite to the first conductive type, a plurality of first electrodes electrically coupled to the emitter layer, a plurality of current collectors electrically coupled to the first electrodes through the plurality of via holes, and a plurality of second electrodes electrically coupled to the substrate. The plurality of via holes includes at least two via holes having different angles.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: April 7, 2015
    Assignee: LG Electronics Inc.
    Inventors: Daehee Jang, Jihoon Ko, Juwan Kang, Jonghwan Kim
  • Publication number: 20150090331
    Abstract: Thin-layer photovoltaic cell structure with mirror layer. The invention relates to a photovoltaic cell structure intended for solar panel applications. The thin layer photovoltaic cell structure comprises at least one I-III-VI2 alloy layer (CIGS) with photovoltaic properties for the conversion of illuminating light into electricity. In particular, the structure comprises at least: one mirror layer (MR) comprising a surface reflecting (FR) a part of the illuminating light, where said reflecting surface (FR) is facing a first face (F1) of the I-III-VI2 alloy layer for receiving reflected illuminating light on said first face; and one or more first layers (CA, ENC) transparent to the illuminating light for receiving transmitted illuminating light on a second face (F2) of the I-III-VI2 alloy layer opposite to the first face (F1).
    Type: Application
    Filed: March 28, 2013
    Publication date: April 2, 2015
    Applicants: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE-CNRS, ELECTRICITE DE FRANCE
    Inventors: Negar Naghavi, Zacharie Jehl, Daniel Lincot, Jean-Francois Guillemoles
  • Patent number: 8993411
    Abstract: A method for forming a pad in a wafer with a three-dimensional stacking structure is disclosed. The method includes bonding a device wafer that includes an Si substrate and a handling wafer, thinning a back side of the Si substrate, depositing an anti-reflective layer on the thinned back side of the Si substrate, depositing a back side dielectric layer on the anti-reflective layer, defining a space for a pad in the back side dielectric layer and forming vias that pass through the back side dielectric layer and the anti-reflective layer and contact back sides of super contacts which are formed on the Si substrate, filling one or more metals in the vias and the defined space for the pad, and removing a remnant amount of the metal filled in the space for the pad through planarization by a CMP (chemical mechanical polishing) process.
    Type: Grant
    Filed: February 23, 2013
    Date of Patent: March 31, 2015
    Assignee: Siliconfile Technologies Inc.
    Inventors: Heui-Gyun Ahn, Se-Jung Oh, In-Gyun Jeon, Jun-Ho Won
  • Publication number: 20150087106
    Abstract: In various embodiments, photovoltaic devices incorporate discontinuous passivation layers (i) disposed between a thin-film absorber layer and a partner layer, (ii) disposed between the partner layer and a front contact layer, and/or (iii) disposed between a back contact layer and the thin-film absorber layer.
    Type: Application
    Filed: September 22, 2014
    Publication date: March 26, 2015
    Inventors: Markus Eberhard Beck, Timothy J. Nagle, Sourav Roger Basu
  • Publication number: 20150083209
    Abstract: The present invention aims to provide a coatable diffusing agent composition that can prevent the formation of precipitates, has a longer solution life than conventional PTG solutions free of water, and thus can be stably stored for a long period of time even when this PTG solution is produced in large quantities, and is highly cost effective. The coatable diffusing agent composition of the present invention includes a titanate, a phosphorus compound, water, and an organic solvent.
    Type: Application
    Filed: March 27, 2013
    Publication date: March 26, 2015
    Applicants: NAGASE CHEMTEX CORPORATION, SHARPP KABUSHIKI KAISHA
    Inventors: Yosuke Ooi, Daisuke Hironiwa, Takahiro Hashimoto, Yosuke Maruyama
  • Publication number: 20150087102
    Abstract: A method comprises implanting ions in a substrate to form a plurality of photo diodes, forming an interconnect layer over a first side of the substrate and applying a first halogen treatment process to a second side of the substrate and forming a first silicon-halogen compound layer over the second side of the substrate as a result of applying the first halogen treatment process.
    Type: Application
    Filed: November 19, 2014
    Publication date: March 26, 2015
    Inventors: Shiu-Ko JangJian, Chin-Nan Wu, Chun Che Lin
  • Patent number: 8987039
    Abstract: A process is provided for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a composition comprising a precursor selected from the group consisting of an organosilane, an aminosilane, and mixtures thereof, wherein the amorphous silicon carbide antireflective coating is a film represented by the formula SivCxNuHyFz, wherein v+x+u+y+z=100%, v is from 1 to 35 atomic %, x is from 5 to 80 atomic %, u is from 0 to 50 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %.
    Type: Grant
    Filed: October 2, 2008
    Date of Patent: March 24, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Patrick Timothy Hurley, Robert Gordon Ridgeway, Raymond Nicholas Vrtis, Mark Leonard O'Neill, Andrew David Johnson