Abstract: A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.

Abstract: A method for manufacturing a solar cell includes forming a first electrode on a substrate, removing a portion of the first electrode to form a first electrode opening, forming a light absorbing layer on the first electrode and in the first electrode opening, and applying a laser beam to the substrate to create an interface reaction between the first electrode and at least the light absorbing layer, thereby removing a portion of the light absorbing layer to form a light absorbing layer opening.

Abstract: Devices are described including a component comprising an alloy of AlN and AlSb. The component has an index of refraction substantially the same as that of a semiconductor in the optoelectronic device, and has high transparency at wavelengths of light used in the optoelectronic device. The component is in contact with the semiconductor in the optoelectronic device. The alloy comprises between 0% and 100% AlN by weight and between 0% and 100% AlSb by weight. The semiconductor can be a III-V semiconductor such as GaAs or AlGaInP. The component can be used as a transparent insulator. The alloy can also be doped to form either a p-type conductor or an n-type conductor, and the component can be used as a transparent conductor. Methods of making and devices utilizing the alloy are also disclosed.

Abstract: A semiconductor light-emitting device is provided that may include an electrode layer, a light-emitting structure including a compound semiconductor layer on the electrode layer, and an electrode on the light-emitting structure, wherein the electrode includes an ohmic contact layer that contacts the compound semiconductor layer, a first barrier layer on the ohmic contact layer, a conductive layer including copper on the first barrier layer, a second barrier layer on the conductive layer, and a bonding layer on the second barrier layer.

Abstract: A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.

Abstract: A backside illumination image sensor structure comprises an image sensor formed adjacent to a first side of a semiconductor substrate, wherein a first dielectric layer formed over the first side of the semiconductor substrate and an interconnect layer formed over the first dielectric layer. The image sensor structure further comprises a backside illumination film formed over a second side of the semiconductor substrate and a first silicon halogen compound layer formed between the second side of the semiconductor substrate and the backside illumination film.

Abstract: As the antireflection film of solar cells, a nitride film was used which was conventionally formed by reduced pressure plasma CVD. However, reducing solar cell production costs has been difficult due to high equipment costs and processing costs involved in reduced pressure treatment. By means of a plasma head comprising multiple plasma head unit members which, arranged in rows, apply an electric or magnetic field via a dielectric member and generate plasma, this CVD film production method forms a nitride film with atmospheric pressure plasma CVD using dielectric-barrier discharge. The dielectric discharge is capable of forming a glow discharge plasma stable even at atmospheric pressure, and, by generating and reacting different plasmas from neighboring plasma outlets, it is possible to form a nitride film in atmospheric pressure, making it possible to produce low-cost solar cells.

Abstract: The present invention relates to cost effective methods for metallization and or metallization and interconnection of high efficiency silicon based back-contacted back-junction solar panels and solar panels thereof having a multiplicity of alternating rectangular emitter- and base regions on the back-side of each cell, each with rectangular metallic electric finger conductor above and running in parallel with the corresponding emitter- and base region, a first insulation layer in-between the wafer and finger conductors, and a second insulation layer in between the finger conductors and cell interconnections.

Abstract: Embodiments of the invention include a solar cell and methods of forming a solar cell. Specifically, the methods may be used to form a passivation/anti-reflection layer having desired functional and optical properties on a solar cell substrate. In one embodiment, a method of forming an anti-reflection layer on a solar cell substrate, the method includes flowing a first processing gas mixture into a processing chamber, wherein the first processing gas mixture includes at least a silicon containing gas and a nitrogen containing gas, wherein a ratio by flow volume of the silicon containing gas to the nitrogen containing gas supplied to the first processing gas mixture is controlled at between about 2:1 to about 1:5, applying a source RF power to the processing chamber in the presence of the first processing gas mixture, controlling the process pressure under 100 mTorr, and forming a silicon nitride containing layer on the substrate.

Abstract: A light-absorbing device and method employ a series of photon-absorbing semiconductor substructures. A first semiconductor substructure provides first and second energy states. A difference between the first and second states being such as to cause an electron to be promoted from the first state to the second state upon absorption of a photon of a first energy. A second semiconductor substructure provides third and fourth energy states. The third state is arranged to receive the electron from the second state. A difference between the third and fourth states being such as to cause the electron to be promoted from the third state to the fourth state upon absorption of a subsequent photon of a second energy. The third state has a lower energy than the second state, such as to cause the electron to dissipate energy as it passes from the second state to the third state.

Abstract: An image sensor device includes a substrate including a light sensing region therein and a reflective structure on a first surface of the substrate over the light sensing region. An interconnection structure having a lower reflectivity than the reflective structure is provided on the first surface of the substrate adjacent to the reflective structure. A microlens is provided on a second surface of the substrate opposite the first surface. The microlens is configured to direct incident light to the light sensing region, and the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. Related devices and fabrication methods are also discussed.

Abstract: The present invention relates to a solar cell. The solar cell includes a substrate of a first conductive type, an emitter layer of a second conductive type opposite the first conductive type on the substrate, first and second anti-reflection layers that are sequentially positioned on the emitter layer, a first electrode electrically connected to the emitter layer, first to third passivation layers that are sequentially positioned on the substrate, each of the first to third passivation layers including a plurality of exposed portions, and a plurality of second electrodes electrically connected to portions of the substrate exposed by the plurality of exposed portions.

Abstract: A method of forming a photovoltaic device containing a buried emitter region and vertical metal contacts is provided. The method includes forming a plurality of metal nanoparticles on exposed portions of a single-crystalline silicon substrate that are not covered by patterned antireflective coatings (ARCs). A metal nanoparticle catalyzed etching process is then used to form trenches within the single-crystalline silicon substrate and thereafter the metal nanoparticles are removed from the trenches. An emitter region is then formed within exposed portions of the single-crystalline silicon substrate, and thereafter a metal contact is formed atop the emitter region.

Abstract: Disclosed herein is a solid-state image pickup element, including: a semiconductor substrate; a pixel portion which is formed on the semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion portion are arranged; an insulating layer formed on the semiconductor substrate so as to cover the photoelectric conversion portion; a hole portion formed in the insulating layer and above the photoelectric conversion portion; a silicon nitride layer formed so as to cover a bottom surface and a side surface of the hole portion; and a buried layer formed on the silicon nitride layer, wherein the silicon nitride layer is formed so as to contain a silicon nitride formed by utilizing an atomic layer deposition method.

Abstract: Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell. A layer of silicon is formed on the region of doped silicon nano-particles. At least a portion of the layer of silicon is mixed with at least a portion of the region of doped silicon nano-particles to form a doped polycrystalline silicon layer disposed on the dielectric layer.

Abstract: Methods for improving the efficiency of solar cells are disclosed. A solar cell consistent with the present disclosure includes a back contact metal layer disposed on a substrate. The solar cell also includes an electron reflector material(s) layer formed on the back contact metal layer and an absorber material(s) layer disposed on the electron reflector material(s) layer. In addition, the solar cell includes a buffer material(s) layer formed on the absorber material(s) layer wherein the electron reflector material(s) layer, absorber material(s) layer, and buffer material(s) layer form a pn junction within the solar cell. Furthermore, a TCO material(s) layer is formed on the buffer material(s) layer. In addition, the front contact layer is formed on the TCO material(s) layer.

Abstract: Disclosed is a method for manufacturing a photovoltaic device. The method includes: forming a first electrode on a substrate; forming a first unit cell on the first electrode; forming a portion of an intermediate reflector on the first unit cell in a first manufacturing system, the intermediate reflector including a plurality of first and second sub-layers alternately stacked; exposing to the air the substrate on which the portion of the intermediate reflector is formed; forming the rest of the intermediate reflector in a second manufacturing system, the intermediate reflector including the plurality of the first and second sub-layers alternately stacked; forming a second unit cell on the intermediate reflector; and forming a second electrode on the second unit cell.

Abstract: A manufacturing method of antireflection substrate structure includes: providing a silicon wafer having a first rough surface; forming an antireflection optical film on the silicon wafer, wherein the antireflection optical film conformally overlays the first rough surface; performing a surface treatment on the antireflection optical film so that the antireflection optical film has a hydrophilic surface, and the hydrophilic surface is relatively far away from the silicon wafer; dropping a colloidal solution on the hydrophilic surface of the antireflection optical film, wherein the colloidal solution includes a solution and multiple nano-balls and the nano-balls are adhered onto the hydrophilic surface; and performing an etching process on the hydrophilic surface of the antireflection optical film by taking the nano-balls as an etching mask so as to form a second rough surface, wherein the roughness of the second rough surface is different from the roughness of the first rough surface.

Abstract: A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a semiconductor substrate doped with a first conductive type impurity through which a via hole passing from a first surface of the semiconductor substrate to a second surface thereof facing the first surface is formed, wherein the first surface is a light receiving surface, upper and lower emitter layers respectively formed on upper and lower surfaces of the semiconductor substrate and doped with a second conductive type impurity that is different from the first conductive type impurity, current collecting layers formed on sidewalls of the via hole and doped with a higher concentration of the first conductive type impurity than that of the semiconductor substrate, a contact electrode extending from the first surface of the semiconductor substrate to the second surface thereof so as to fill the via hole, and upper and lower electrodes respectively contacting the upper and lower emitter layers.

Abstract: A method for manufacturing a semiconductor device includes providing a substrate and a back electrode disposed between the substrate and an active semiconductor layer. The back electrode has a reflective layer that is reflective to at least one wavelength of light and includes a reflective surface having an undulating profile that includes peaks and valleys. The method includes depositing a filler layer onto the reflective layer of the back electrode. The filler layer at least partially fills one or more of the valleys of the reflective surface. The filler layer is transmissive to the at least one wavelength of light such that the at least one wavelength of light can pass through the filler layer to the reflective layer. The method includes depositing the active semiconductor layer onto the filler layer such that the filler layer and the back electrode are disposed between the substrate and the active semiconductor layer.

Abstract: A method for fabricating a photovoltaic device includes forming a patterned layer on a doped emitter portion of the photovoltaic device, the patterned layer including openings that expose areas of the doped emitter portion and growing an epitaxial layer over the patterned layer such that a crystalline phase grows in contact with the doped emitter portion and a non-crystalline phase grows in contact with the patterned layer. The non-crystalline phase is removed from the patterned layer. Conductive contacts are formed on the epitaxial layer in the openings to form a contact area for the photovoltaic device.

Abstract: A first conductive film overlapping with an oxide semiconductor film is formed over a gate insulating film, a gate electrode is formed by selectively etching the first conductive film using a resist subjected to electron beam exposure, a first insulating film is formed over the gate insulating film and the gate electrode, removing a part of the first insulating film while the gate electrode is not exposed, an anti-reflective film is formed over the first insulating film, the anti-reflective film, the first insulating film and the gate insulating film are selectively etched using a resist subjected to electron beam exposure, and a source electrode in contact with one end of the oxide semiconductor film and one end of the first insulating film and a drain electrode in contact with the other end of the oxide semiconductor film and the other end of the first insulating film are formed.

Abstract: A coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A magnetic oxide layer is formed on the cobalt by annealing at temperatures on the order of 1000° K to provide a few monolayer thick layer. Where the gate is cobalt, the resulting magnetic oxide is Co3O4(111). Other magnetic materials and oxides may be employed. A few ML field of graphene is deposited on the cobalt (III) oxide by molecular beam epitaxy, and a source and drain are deposited of base material. The resulting device is scalable, provides high on/off rates, is stable and operable at room temperature and easily fabricated with existing technology.

Abstract: A method for producing a metal contact structure of a photovoltaic solar cell, including: applying an electrically non-conductive insulating layer to a semiconductor substrate, applying a metal contact layer to the insulating layer, and generating a plurality of local electrically conductive connections between the semiconductor substrate and the contact layer right through the insulating layer. The metal contact layer is formed using two pastes containing metal particles: the first paste containing metal particles is applied to local regions, and the second paste containing metal particles is applied covering at least the regions covered with the first paste and partial regions located therebetween.

Abstract: A photodiode structure includes a photodiode and a concave reflector disposed below the photodiode. The concave reflector is arranged to reflect incident light from above back toward the photodiode.

Abstract: The challenge for the present invention is to provide a film-forming method and for forming a passivation film which can sufficiently inhibit the loss of carriers due to their recombination; and a method for manufacturing a solar cell element with the use of the method or the device. The film-forming device comprises a mounting portion 22 for mounting a film-forming object, a high frequency power source 25, and a shower plate 23 which is provided to face the film-forming object S mounted on the mounting portion 22, which introduces a film-forming gas, and to which the high frequency power source is connected and a high frequency voltage is applied. A low frequency power source 26 for applying a low frequency voltage is connected to the shower plate or the mounting portion mounting a substrate. The film-forming method is performed using the film-forming device, and the film-forming method is carried out in forming a passivation film.

Abstract: A method and device is disclosed for reducing noise in CMOS image sensors. An improved CMOS image sensor includes a light sensing structure surrounded by a support feature section. An active section of the light sensing structure is covered by no more than optically transparent materials. A light blocking portion includes an opaque layer or a black light filter layer in conjunction with an opaque layer, covering the support feature section. The light blocking portion may also cover a peripheral portion of the light sensing structure. The method for forming the CMOS image sensors includes using film patterning and etching processes to selectively form the opaque layer and the black light filter layer where the light blocking portion is desired, but not over the active section. The method also provides for forming microlenses over the photosensors in the active section.

Abstract: This invention provides a method of making a photovoltaic cell. The method uses an etching composition comprising one or more onium salts selected from the group consisting of iodonium salts and sulfonium and an organic medium to etch the anti-reflection coating. Also provided is a photovoltaic cell made by this method.

Abstract: A method of manufacturing a solar cell comprises the steps of: forming a lower conductor layer on a front side of a substrate; firing the lower conductor layer at a first temperature to form a first portion embedded into a doped region of the substrate and a second portion; forming an anti-reflection coating (ARC) layer on the front side and the second portion, wherein the ARC layer covers the lower conductor layer such that the second portion is disposed in the ARC layer; forming an upper conductor layer, corresponding to the lower conductor layer and electrically connected to the lower conductor layer, on the ARC layer; and firing the upper conductor layer at a second temperature to form a first portion embedded into the ARC layer and a second portion, which is exposed out of the ARC layer.

Abstract: A method of manufacturing a photodetector structure is provided. The method includes forming a structural layer by making a trench in a bulk silicon substrate and filling the trench with a cladding material, forming a single-crystallized silicon layer on the structural layer, and forming a germanium layer on the single-crystallized silicon layer.

Abstract: A solar cell element and a method for forming an alumina film are disclosed. The method comprises: preparing a substrate; supplying sources of an aluminum source material that contains aluminum atoms and an oxygen source material that contains oxygen atoms comprising H2O and O3 to the substrate; and forming an alumina film on the substrate.

Abstract: A photoelectric converter is provided with a photoelectric conversion unit, a light-receiving-surface electrode provided on the light-receiving surface of the photoelectric conversion unit, and a rear-surface electrode provided on the rear surface of the photoelectric conversion unit. The rear-surface electrode includes a transparent conductive film layered on the rear surface of the photoelectric conversion unit, and a metallic film layered on substantially the entire surface of the transparent conductive film with the exception of an end edge region.

Abstract: An image sensor includes a semiconductor layer having first and second faces, and a wiring structure arranged on a side of the first face, wherein photoelectric converters are arranged in the semiconductor layer and light is incident on the second face. The wiring structure includes reflection portions having reflection regions and arranged for at least some of the photoelectric converters, absorbing portions arranged around the reflection regions, an insulator portion arranged to surround the absorbing portions, and an interlayer insulating film arranged between the first face and a group of the reflection portions, the light absorbing portions, and the insulator portion, and a reflectance of the light absorbing portions is smaller than a reflectance of the reflection regions, and a light transmittance of the light absorbing portions is smaller than a light transmittance of the insulator portion.

Abstract: A solar cell includes a substrate having an N-region and a P-region, a first anti-reflective layer disposed on the substrate, a metallic contact disposed on the first anti-reflective layer, a second anti-reflective layer disposed on the first anti-reflective layer and the metallic contact, and a region partially defined by the first anti-reflective layer and the second anti-reflective layer having diffused metallic contact material operative to form a conductive path to the substrate through the first anti-reflective layer, the metallic contact, and the second anti-reflective layer.

Abstract: A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.

Abstract: The present invention provides a method of manufacturing a crystalline silicon solar cell, comprising: —providing a crystalline silicon substrate having a front side and a back side; —forming a thin silicon oxide film on at least one of the front and the back side by soaking the crystalline silicon substrate in a chemical solution; —forming a dielectric coating film on the thin silicon oxide film on at least one of the front and the back side. The thin silicon oxide film may be formed with a thickness of 0.5-10 nm. By forming a oxide layer using a chemical solution, it is possible to form a thin oxide film for surface passivation wherein the relatively low temperature avoids deterioration of the semiconductor layers.

Abstract: The present invention discloses an image sensor device and a method for making an image sensor device. The image sensor device comprises an optical pixel and an electronic circuit, wherein the optical pixel includes: a substrate; an image sensor area formed in the substrate; a masking layer formed above the image sensor area, wherein the masking layer is formed during a process for forming the electronic circuit; and a light passage above the masking layer for increasing light sensing ability of the image sensor area.

Abstract: A method of creating a reflective shield for an image sensor device includes depositing a first dielectric layer on a substrate, wherein a photodiode is on the substrate. The method further includes removing surface topography by performing chemical mechanical polishing (CMP) on the first dielectric layer. The method further includes patterning the substrate to define an area on a surface of the first dielectric layer, wherein the area is directly above the photodiode. The method further includes depositing a layer of a material with high reflectivity on the substrate, wherein the material fills the area on the surface of the first dielectric layer. The method further includes removing excess material with high reflectivity, wherein the reflective shield is formed and is embedded in the first dielectric layer. The method further includes depositing a second dielectric material on the substrate, wherein the second dielectric material covers the reflective shield.

Abstract: Manufacture for an improved stacked-layered thin film solar cell. Solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.

Abstract: A photovoltaic cell such as a solar cell is disclosed. The cell comprises (a) a semiconductor substrate having a front surface, (b) one or more anti-reflection coating layers on the front surface of the semiconductor substrate, (c) a plurality of silver-containing fingers in contact with the one or more anti-reflection coating layers and in electrical contact with the semiconductor substrate; and (d) one or more base metal containing buss bars each in contact with the one or more anti-reflection coating layers and the silver-containing fingers. The base metal may be selected from one or more of copper, nickel, lead, tin, iron, indium, zinc, bismuth and cobalt. Methods for making protovoltaic cells with base metal containing buss bars are also disclosed.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell may include a substrate, an emitter layer positioned at a first surface of the substrate, a first anti-reflection layer that is positioned on a surface of the emitter layer and may include a plurality of first contact lines exposing a portion of the emitter layer, a first electrode that is electrically connected to the emitter layer exposed through the plurality of first contact lines and may include a plating layer directly contacting the emitter layer, and a second electrode positioned on a second surface of the substrate.

Abstract: A solar cell includes a doped layer disposed on a first surface of a semiconductor substrate, a doped polysilicon layer disposed in a first region of a second surface of the semiconductor substrate, a doped area disposed in a second region of the second surface, and an insulating layer covering the doped polysilicon layer and the doped area. The insulating layer has openings exposing portions of the doped polysilicon layer and the doped layer, and the doped polysilicon layer and doped layer are respectively connected to a first electrode and a second electrode through the openings. The semiconductor substrate and the doped layer have a first doping type. One of the doped polysilicon layer and the doping area has a second doping type, and the other one of the doped polysilicon layer and the doping area has the first doping type which is opposite to the second doping type.

Abstract: Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

Abstract: A crystalline-based silicon photoelectric conversion device comprises: an intrinsic silicon-based layer and a silicon-based layer of a first conductivity type, on one surface of a single-crystal silicon substrate of the first conductivity type; and an intrinsic silicon-based and a silicon-based layer of an opposite conductivity type, in this order on the other surface of the silicon substrate. At least one of forming the intrinsic silicon-based layer of the first conductivity type layer-side forming the intrinsic silicon-based layer of the opposite conductivity type layer-side includes: forming a first intrinsic silicon-based thin-film layer having a thickness of 1-10 nm on the silicon substrate; plasma-treating the silicon substrate in a gas containing mainly hydrogen; and forming a second intrinsic silicon-based thin-film layer on the first intrinsic silicon-based thin-film.

Abstract: A method of manufacturing an image sensor having a backside illumination (BSI) structure includes forming a wiring unit on a front side of a semiconductor substrate, forming an anti-reflective layer in an active pixel sensor (APS) region on a back side of the semiconductor substrate, a photodiode being between the back and front sides of the semiconductor substrate, forming an etch stopping layer on the anti-reflective layer, forming an interlayer insulating layer on the etch stopping layer, the interlayer insulating layer having an etch selectivity with respect to the etch stopping layer, and etching the interlayer insulating layer in the APS region using the etch stopping layer as an etch stopping point.

Abstract: A fluorocarbon coating comprises an amorphous structure with CF2 bonds present in an atomic percentage of at least about 15%, and having a refractive index of less than about 1.4. The fluorocarbon coating can be deposited on a substrate by placing the substrate in a process zone comprising a pair of process electrodes, introducing a deposition gas comprising a fluorocarbon gas into the process zone, and forming a capacitively coupled plasma of the deposition gas by coupling energy to the process electrodes.

Abstract: A method for manufacturing a micromechanical component is described, including the steps of: forming a first etch stop layer on a base substrate, the first etch stop layer being formed in such a way that it has a first pattern of through-cutouts; forming a first electrode-material layer on the first etch stop layer; forming a second etch stop layer on the first electrode-material layer, the second etch stop layer being formed in such a way that it has a second pattern of through-cutouts differing from the first pattern; forming a second electrode-material layer on the second etch stop layer; forming a patterned mask on the second electrode-material layer; and carrying out a first etching step in a first direction and a second etching step in a second direction counter to the first direction in order to etch at least one first electrode unit out of the first electrode-material layer and to etch at least one second electrode unit out of the second electrode-material layer.

Abstract: A fabrication method of an anti-reflection structure includes the steps of: forming a resin film having micro-particles dispersed therein on a surface of a substrate; forming a protrusion dummy pattern on the resin film by etching the resin film using the micro-particles in the resin film as a mask while gradually etching the micro-particles; and forming a protrusion pattern on the surface of the substrate by etching back the surface of the substrate together with the resin film having the protrusion dummy pattern formed thereon, and transferring a surface shape of the protrusion dummy pattern formed on a surface of the resin film to the surface of the substrate.

Abstract: A method for manufacturing a photovoltaic cell with a selective emitter, including the steps of: depositing an antireflection layer including n-type dopants on an n- or p-type silicon substrate, said deposition being, performed in the presence of a chemical compound that accelerates the diffusion of n-type dopant atoms in said substrate; overdoping at least one area of the substrate to form at least one n++ overdoped emitter by local diffusion of the n dopants of at least one area of the antireflection layer; depositing at least one n-type conductive material on the at least one n++ overdoped emitter; and at least one p-type conductive material on the surface of the substrate opposite to that including the antireflection layer; forming the n contacts and the p contacts simultaneously to the forming of an n+ emitter by an anneal capable of diffusing within the substrate n dopants from the antireflection layer.