Projection Of Etchant Against A Moving Substrate Or Controlling The Angle Or Pattern Of Projected Etchant Patents (Class 438/748)
  • Patent number: 10283385
    Abstract: A wet chemical processing tool is provided, which includes an assembly of a container and at least three nozzles. The container includes a volume configured to contain at least one substrate therein. The wet chemical processing tool includes a flow controller configured to actuate and de-actuate flow of the liquid through each of the at least three nozzles. The flow controller can be operated by an automated program that includes a plurality of wet processing steps. At least two of the plurality of wet processing steps generate a respective unique processing-step vortex flow pattern by de-actuating flow of the liquid from a respective set of at least one deactivated nozzle selected from the at least three nozzles while actuating each of the at least three nozzles that does not belong to the set of at least one deactivated nozzle.
    Type: Grant
    Filed: March 21, 2017
    Date of Patent: May 7, 2019
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Takeshi Watanabe, Yoshihiro Nagura, Kouta Fujikawa, Hitoshi Suzuki
  • Patent number: 9780335
    Abstract: Lamination transfer films and methods for transferring a structured layer to a receptor substrate. The transfer films include a carrier substrate having a releasable surface, a sacrificial template layer applied to the releasable surface of the carrier substrate and having a non-planar structured surface, and a thermally stable backfill layer applied to the non-planar structured surface of the sacrificial template layer. The sacrificial template layer is capable of being removed from the backfill layer, such as via pyrolysis, while leaving the structured surface of the backfill layer substantially intact.
    Type: Grant
    Filed: July 20, 2012
    Date of Patent: October 3, 2017
    Assignee: 3M INNOVATIVE PROPERTIES COMPANY
    Inventors: Martin B. Wolk, Mieczyslaw H. Mazurek, Sergey Lamansky, Margaret M. Vogel-Martin, Vivian W. Jones, Olester Benson, Jr., Michael Benton Free, Evan L. Schwartz, Randy S. Bay, Graham M. Clarke
  • Patent number: 9659794
    Abstract: An apparatus includes a susceptor, a first piping, a second piping, a liquid source, a third piping and a gas source. The susceptor is suitable for placing a wafer, and the first piping is configured to dispense a chemical to the wafer on the susceptor. The second piping communicates with the first piping. The liquid source is configured to deliver a cleaning liquid to the first piping through the second piping to wash a portion of the first piping. The third piping communicates with the first piping. The gas source is configured to flow a purge gas to the first piping through the third piping to purge the portion of the first piping.
    Type: Grant
    Filed: August 8, 2014
    Date of Patent: May 23, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Sung Hung, Yu-Kuei Lee, Cheng-Nan Kao, Hung-Hsin Liang
  • Publication number: 20150147888
    Abstract: A liquid processing apparatus of the present disclosure holds and rotate a substrate in a substrate holding unit, ejects an etching liquid while moving a main nozzle of a main nozzle unit between a first position where the etching liquid reaches a center of the substrate and a second position closer to a peripheral side of the substrate than the first position, and then, ejects the etching liquid to the substrate from a sub nozzle provided at a third position closer to the peripheral side of the substrate than the first position at an ejection flow rate higher than that from the main nozzle.
    Type: Application
    Filed: November 20, 2014
    Publication date: May 28, 2015
    Inventors: Jun Nonaka, Shogo Mizota, Tatsuya Nagamatsu, Daisuke Saiki, Kazuhiro Teraoka, Takashi Yabuta
  • Patent number: 9040431
    Abstract: A method for processing a silicon wafer is provided. The method includes allowing an etchant to flow along a surface of the silicon wafer to form a line in which a plurality of apertures are arranged in a flow direction of the etchant from an upstream side to a downstream side. The apertures arranged in the line include a first aperture formed on the most upstream side and a second aperture formed downstream of the first aperture in the flow direction of the etchant. The first aperture and the second aperture are subjected to different processes after being formed.
    Type: Grant
    Filed: June 24, 2013
    Date of Patent: May 26, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hirohisa Fujita, Shuji Koyama, Keiji Matsumoto, Kenta Furusawa
  • Publication number: 20150140817
    Abstract: A method for removing material from surfaces of at least a portion of at least one recess or at least one aperture extending into a surface of a substrate includes pressurizing fluid so as to cause the fluid to flow into the at least one recess or the at least one aperture. The fluid may be pressurized by generating a pressure differential across the substrate, which causes the fluid to flow into or through the at least one aperture or recess. Apparatus for pressurizing fluid so as to cause it to flow into or through recesses or apertures in a substrate are also disclosed.
    Type: Application
    Filed: January 28, 2015
    Publication date: May 21, 2015
    Inventor: Ross S. Dando
  • Publication number: 20150093906
    Abstract: A substrate treatment apparatus which can more efficiently regenerate phosphoric acid which is able to be returned to etching treatment along with such etching treatment as much as possible without using a large facility, that is a substrate treatment apparatus which treats a silicon substrate W on which a nitride film is formed by a liquid etchant which contains phosphoric acid, which comprises an etching treatment unit (the spin treatment unit 30) which gives a suitable quantity of liquid, etchant to each substrate which is fed one at a time so as to etch the substrate and remove the nitride film, a phosphoric acid regenerating unit (the spin treatment unit 30) which mixes liquid etchant used for treatment of one substrate and a suitable quantity of liquid hydrofluoric acid for the amount of the used liquid etchant under a predetermined temperature environment to regenerate the phosphoric acid, and a phosphoric acid recovery unit (the pump 38, phosphoric acid recovery tank 50, and pump 52) which returns the
    Type: Application
    Filed: September 19, 2014
    Publication date: April 2, 2015
    Applicant: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Nobuo KOBAYASHI, Koichi HAMADA, Yoshiaki KUROKAWA, Masaaki FURUYA, Hideki MORI, Yasushi WATANABE, Yoshinori HAYASHI
  • Patent number: 8981345
    Abstract: Provided is a graphene nanoribbon sensor. The sensor includes a substrate, a graphene layer formed on the substrate in a first direction, and an upper dielectric layer on the graphene layer. Here, the graphene layer may have a plurality of electrode regions respectively separated in the first direction and a channel between the plurality of electrode regions.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: March 17, 2015
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Young-Jun Yu, Choon Gi Choi
  • Publication number: 20150028455
    Abstract: A device includes sidewalls formed in a wafer surface, where the sidewalls descend to a recessed surface. The recessed surface generally promotes resist coverage on the wafer surface, including corners (e.g., junctions between the wafer surface and various surface topographies, such as cavities, the recessed surface, and so forth) on the wafer. In one or more implementations, a wet etching procedure is used to form the sidewalls and recessed surface. A resist material (e.g., a photoresist material) is deposited onto the wafer surface, where the photoresist fully covers one or more of the top corners of the wafer surface. In one or more implementations, the recessed surface is positioned adjacent a trench formed in the wafer to promote resist coverage on the top surface of the wafer.
    Type: Application
    Filed: December 27, 2013
    Publication date: January 29, 2015
    Applicant: Maxim Integrated Products, Inc.
    Inventors: Xuejun Ying, Li Li, Amit S. Kelkar, Brian S. Poarch
  • Patent number: 8932962
    Abstract: A method and apparatus for dispensing a liquid etchant onto a wafer dispenses the liquid etchant onto a wafer using a scanning dispensing nozzle while controlling the dispensing temperature of the etchant in real time as a function of the radial position of the dispensing nozzle over the wafer. The dispensing temperature of the etchant is controlled to enhance the effectiveness of the etchant and thus compensate for the lower etching rate zones in the wafer.
    Type: Grant
    Filed: April 9, 2012
    Date of Patent: January 13, 2015
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Weibo Yu, Kuo Bin Huang, Chao-Cheng Chen, Syun-Ming Jang
  • Publication number: 20140349489
    Abstract: An apparatus for treating a wafer-shaped article, comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, a liquid dispenser for dispensing a treatment liquid onto a downwardly facing surface of a wafer-shaped article when positioned on the spin chuck, and a gas dispenser for dispensing a gas within a gap defined between the downwardly-facing surface of the wafer-shaped article and an upper surface of the spin chuck.
    Type: Application
    Filed: August 8, 2014
    Publication date: November 27, 2014
    Applicant: LAM RESEARCH AG
    Inventors: Kei KINOSHITA, Keisuke SATO
  • Patent number: 8796157
    Abstract: Method of selectively etching a first material on a substrate with a high selectivity towards a second material by flowing a liquid etchant across a substrate surface at a flow sufficiently fast to generate a minimum mean velocity parallel to the substrate's surface, wherein the first material is selected from a group including materials with semiconducting properties based on at least two different chemical elements.
    Type: Grant
    Filed: September 1, 2005
    Date of Patent: August 5, 2014
    Assignee: Lam Research AG
    Inventor: Gerald Wagner
  • Publication number: 20140206195
    Abstract: A method of removing carbon materials, preferably amorphous carbon, from a substrate includes dispensing a liquid sulfuric acid composition including sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the carbon material coated substrate. The liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. In preferred embodiments, amorphous carbon is selectively removed as compared to a silicon oxide (e.g., silicon dioxide) and/or silicon nitride.
    Type: Application
    Filed: March 15, 2013
    Publication date: July 24, 2014
    Applicant: TEL FSI, Inc.
    Inventor: Jeffrey M. Lauerhaas
  • Patent number: 8778802
    Abstract: A polishing method includes causing a polishing pad arranged on a turn table to rotate together with the turn table, and polishing a surface of a substrate by using the rotating polishing pad while supplying a chemical fluid to a surface of the polishing pad on a fore side of the substrate from an oblique direction with respect to the surface of the polishing pad.
    Type: Grant
    Filed: May 23, 2007
    Date of Patent: July 15, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Dai Fukushima, Gaku Minamihaba, Hiroyuki Yano
  • Patent number: 8759229
    Abstract: A method for manufacturing an epitaxial wafer that can reduce occurrence of a surface defect or a slip formed on an epitaxial layer is provided. The manufacturing method is characterized by comprising: a smoothing step of controlling application of an etchant to a wafer surface in accordance with a surface shape of a silicon wafer to smooth the wafer surface; and an epitaxial layer forming step of forming an epitaxial layer formed of a silicon single crystal on the surface of the wafer based on epitaxial growth.
    Type: Grant
    Filed: January 24, 2007
    Date of Patent: June 24, 2014
    Assignee: Sumco Corporation
    Inventors: Sakae Koyata, Kazushige Takaishi, Tomohiro Hashii, Katsuhiko Murayama, Takeo Katoh
  • Patent number: 8741070
    Abstract: Disclosed are a liquid processing method, a liquid processing apparatus, and a recording medium that can prevent convex portions of a target substrate from collapsing when a rinsing liquid is dried. A base surface of a target substrate is hydrophilized and the surfaces of convex portions become water-repellent by surface-processing the target substrate which includes a main body, a plurality of convex portions protruding from the main body, and a base surface formed between the convex portions on the substrate main body. Next, a rinsing liquid is supplied to the target substrate which has been subjected to the surface processing. Thereafter, the rinsing liquid is removed from the target substrate.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: June 3, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Nobutaka Mizutani, Tsutae Omori, Takehiko Orii, Akira Fujita
  • Publication number: 20140080312
    Abstract: A wafer is held horizontally and rotated by a substrate holding mechanism. An aqueous alkaline solution is supplied to a wafer by a nozzle and caused to flow from a central portion to a peripheral edge portion of the wafer, thereby etching the wafer. An amount of oxygen, which is equal to or more than the amount of oxygen in atmospheric air involved in the aqueous alkaline solution flowing on the wafer, is previously dissolved in the aqueous alkaline solution.
    Type: Application
    Filed: June 5, 2013
    Publication date: March 20, 2014
    Inventors: Hayato IWAMOTO, Yoshiya HAGIMOTO, Tomoki TETSUKA, Shinichiro SHIMOMURA, Teruomi MINAMI, Hiroki SAKURAI, Hirotaka MARUYAMA, Yosuke KAWABUCHI, Hiroshi TANAKA
  • Publication number: 20140051258
    Abstract: It is an object to carry out a chemical treatment for a peripheral edge part of a substrate while suppressing an amount of consumption of a processing liquid and a time required for processing. In order to achieve the object, a substrate processing device injects heating steam to a peripheral edge part of a substrate to heat the peripheral edge part when carrying out a chemical treatment for the peripheral edge part of the substrate while rotating the substrate in a substantially horizontal posture. Moreover, the substrate processing device injects a gas from above the substrate toward a predetermined injection target region defined within a range surrounded by a rotating track of the peripheral edge part of the substrate in an upper surface of the substrate, thereby generating, on the substrate, a gas flow which flows from the injection target region toward the peripheral edge part of the substrate.
    Type: Application
    Filed: July 30, 2013
    Publication date: February 20, 2014
    Applicant: DAINIPPON SCREEN MFG. CO., LTD.
    Inventors: Kenji IZUMOTO, Nobuyuki SHIBAYAMA
  • Publication number: 20140051259
    Abstract: It is an object to reduce a chemical treating width in a peripheral edge part of a substrate while suppressing deterioration in each of uniformity of the chemical treating width and processing efficiency. In order to achieve the object, a substrate processing device for carrying out a chemical treatment for a substrate using a processing liquid having a reaction rate increased with a rise in temperature includes a substrate holding portion, a rotating portion for rotating the substrate held in the substrate holding portion in a substantially horizontal plane, a heating portion for injecting heating steam to a central part of a lower surface of the substrate to entirely heat the substrate, and a peripheral edge processing portion for supplying the processing liquid from above to a peripheral edge part of the substrate heated by the heating portion, thereby carrying out a chemical treatment for the peripheral edge part.
    Type: Application
    Filed: July 30, 2013
    Publication date: February 20, 2014
    Applicant: DAINIPPON SCREEN MFG. CO., LTD.
    Inventor: Nobuyuki SHIBAYAMA
  • Patent number: 8636915
    Abstract: To provide a liquid processing apparatus capable of processing substrates with a high throughput with the lesser number of nozzles for chemical-liquid, when the substrates that are horizontally held in cup bodies are liquid-processed by supplying a chemical liquid to the substrates. Taking a developing process as an example of a liquid process, two-types of developing nozzles are prepared for two types of developing methods. The developing nozzle, which is used in the method in which the nozzle is engaged with the process for a longer period of time, is individually disposed on each of a first processing module 1 and a second processing module 2. On the other hand, the developing nozzle, which is used in the method in which the nozzle is engaged with the process for a shorter period of time, is used in common in the first liquid processing module 1 and the second liquid processing module 2. The common developing nozzle is configured to wait on an intermediate position between the modules 1 and 2.
    Type: Grant
    Filed: July 12, 2011
    Date of Patent: January 28, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Yasushi Takiguchi, Taro Yamamoto, Tsutomu Yamahata, Akihiro Fujimoto, Kouji Fujimura
  • Patent number: 8618001
    Abstract: A lifting-off method and a manufacturing method for a thin film transistor (TFT) array substrate using the same are provided. A lifting-off method comprises forming a cavitation jet flow by using a lifting-off solution, and impacting a to-be-lifted-off surface of a substrate by means of the cavitation jet flow to remove a photoresist and a film deposited on the photoresist over the to-be-lifted-off surface. The disclosure may be applied to manufacturing processes for semiconductor devices or TFT array substrate.
    Type: Grant
    Filed: November 29, 2011
    Date of Patent: December 31, 2013
    Assignees: Boe Technology Group Co., Ltd., Beijing Boe Display Technology Co., Ltd.
    Inventors: Yongzhi Song, Zhaohui Hao, Xu Wang, Huiyue Luo, Guojing Ma
  • Patent number: 8596623
    Abstract: A spin chuck in an apparatus for single wafer wet processing has structures at its periphery that, in combination with a supported wafer, form a series of annular nozzles that direct flowing gas from a chuck-facing surface of the wafer, around the edge of the wafer, and exhaust the gas away from the non-chuck-facing surface of the wafer, thereby preventing treatment fluid applied to the non-chuck-facing surface from contacting the edge region of the wafer. Retaining pins with enlarged heads engage the wafer edge and prevent it from being displaced upwardly when a high flow rate of gas is utilized.
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: December 3, 2013
    Assignee: Lam Research AG
    Inventors: Dieter Frank, Michael Puggl
  • Publication number: 20130309874
    Abstract: An apparatus for treating a wafer-shaped article, comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, a liquid dispenser for dispensing a treatment liquid onto a downwardly facing surface of a wafer-shaped article when positioned on the spin chuck, and a gas dispenser for dispensing a gas within a gap defined between the downwardly-facing surface of the wafer-shaped article and an upper surface of the spin chuck.
    Type: Application
    Filed: May 15, 2012
    Publication date: November 21, 2013
    Applicant: LAM RESEARCH AG
    Inventors: Kei KINOSHITA, Keisuke SATO
  • Publication number: 20130267099
    Abstract: A method and apparatus for dispensing a liquid etchant onto a wafer dispenses the liquid etchant onto a wafer using a scanning dispensing nozzle while controlling the dispensing temperature of the etchant in real time as a function of the radial position of the dispensing nozzle over the wafer. The dispensing temperature of the etchant is controlled to enhance the effectiveness of the etchant and thus compensate for the lower etching rate zones in the wafer.
    Type: Application
    Filed: April 9, 2012
    Publication date: October 10, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Weibo YU, Kuo Bin HUANG, Chao-Cheng CHEN, Syun-Ming JANG
  • Patent number: 8529707
    Abstract: Provided is a liquid processing apparatus in which a target substrate is horizontally held on a substrate holding unit and rotated around a vertical shaft, and the chemicals are supplied from a chemical supplying unit to the bottom surface of the target substrate that is rotating. In particular, the liquid processing apparatus performs a first step in which the chemicals are supplied to the target substrate while rotating the target substrate at a first rotation speed, a second step in which the supply of the chemicals is halted and the chemicals are thrown off by rotating the target substrate at a second rotation speed higher than the first rotation speed, and a third step in which the rinse liquid is supplied to the target substrate while rotating the target substrate at a third rotation speed equal to or lower than the first rotation speed.
    Type: Grant
    Filed: June 13, 2011
    Date of Patent: September 10, 2013
    Assignee: Tokyo Electron Limited
    Inventor: Hiromitsu Namba
  • Patent number: 8530359
    Abstract: An apparatus for wet etching metal from a semiconductor wafer comprises a wafer holder for rotating a wafer and a plurality of nozzles for applying separate flow patterns of etching liquid to the surface of the wafer. The flow patterns impact the wafer in distinct band-like impact zones. The flow pattern of etching liquid from at least one nozzle is modulated during a total etching time control the cumulative etching rate in one local etch region relative to the cumulative etching rate in one or more other local etch regions. Some embodiments include a lower etch chamber and an upper rinse chamber separated by a horizontal splash shield. Some embodiments include a retractable vertical splash shield used to prevent splashing of etching liquid onto the inside walls of a treatment container. An etch-liquid delivery system includes a plurality of nozzle flow paths having corresponding nozzle flow resistances, and a plurality of drain flow paths having corresponding drain flow resistances.
    Type: Grant
    Filed: August 4, 2009
    Date of Patent: September 10, 2013
    Assignee: Novellus Systems, Inc.
    Inventors: Steven T. Mayer, David W. Porter
  • Patent number: 8507387
    Abstract: Some embodiments include methods of removing noble metal-containing particles from over a substrate. The substrate is exposed to a composition that reduces adhesion between the noble metal-containing particles and the substrate, and simultaneously the substrate is spun to sweep at least some of the noble metal-containing particles off from the substrate. Some embodiments include methods in which tunnel dielectric material is formed across a semiconductor wafer. Metallic nanoparticles are formed across the tunnel dielectric material. A stack of two or more different materials is formed over the metallic nanoparticles. A portion of the stack is covered with a protective mask while another portion of the stack is left unprotected. The unprotected portion of the stack is removed to expose some of the metallic nanoparticles. The semiconductor wafer to is subjected to etchant suitable to undercut at least some of the exposed metallic nanoparticles, and simultaneously the semiconductor wafer is spun.
    Type: Grant
    Filed: May 14, 2012
    Date of Patent: August 13, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Fatma Arzum Simsek-Ege, Brian Dolan
  • Publication number: 20130203262
    Abstract: A method for selectively removing silicon nitride is described. In particular, the method includes providing a substrate having a surface with silicon nitride exposed on at least one portion of the surface and SiGex (x is greater than or equal to zero) exposed on at least another portion of the surface, and dispensing an oxidizing agent onto the surface of the substrate to oxidize the exposed SiGex. Thereafter, the method includes dispensing a silicon nitride etching agent as a liquid stream onto the surface of the substrate to remove at least a portion of the silicon nitride.
    Type: Application
    Filed: March 15, 2013
    Publication date: August 8, 2013
    Applicant: TEL FSI, INC.
    Inventor: TEL FSI, INC.
  • Publication number: 20130171831
    Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.
    Type: Application
    Filed: December 27, 2012
    Publication date: July 4, 2013
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Tokyo Electron Limited
  • Patent number: 8466071
    Abstract: An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed.
    Type: Grant
    Filed: January 24, 2007
    Date of Patent: June 18, 2013
    Assignee: Sumco Corporation
    Inventors: Sakae Koyata, Tomohiro Hashii, Katsuhiko Murayama, Kazushige Takaishi, Takeo Katoh
  • Publication number: 20130102158
    Abstract: A liquid composition for wet etching has improved selectivity for polysilicon over silicon dioxide, even when the polysilicon is heavily doped and/or the silicon dioxide is a low temperature oxide. The composition comprises 0.05-0.4 percent by weight hydrofluoric acid, 15-40 percent by weight nitric acid, 55-85 percent by weight sulfuric acid and 2-20 percent by weight water. A method and apparatus for wet etching using the composition are also disclosed.
    Type: Application
    Filed: October 19, 2011
    Publication date: April 25, 2013
    Applicant: LAM RESEARCH AG
    Inventor: Stefan DETTERBECK
  • Patent number: 8420550
    Abstract: A method for manufacturing semiconductor substrates. The method includes providing a semiconductor wafer, which has an upper surface, a backside surface, and an edge region around a periphery of the semiconductor wafer. In a preferred embodiment, the upper surface is often for the manufacture of the integrated circuit device elements themselves. The method includes subjecting the semiconductor wafer to one or more process steps to form one or more films of materials on the backside surface. The method mounts the semiconductor wafer to expose the backside surface. The method rotates the semiconductor wafer in a circular manner. In a specific embodiment, the method includes supplying an acid solution containing fluorine bearing species, a nitric acid species, a surfactant species, and an organic acid species, on at least the backside surface as the semiconductor wafer rotates.
    Type: Grant
    Filed: December 15, 2006
    Date of Patent: April 16, 2013
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Yan Wu Chang, Tek Sing Lim
  • Patent number: 8419964
    Abstract: Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.
    Type: Grant
    Filed: August 27, 2008
    Date of Patent: April 16, 2013
    Assignee: Novellus Systems, Inc.
    Inventors: Kousik Ganesan, Shanthinath Ghongadi, Tariq Majid, Aaron Labrie, Steven T. Mayer
  • Patent number: 8394721
    Abstract: A method for obtaining a layout design for an existing integrated circuit, in which, an integrated circuit die is polished with a tilt angle to form an inclined polished surface and one or more images of the inclined polished surface are obtained. The images may be overlapped directly, or the image or the images may be utilized to provide information to obtain a layout design comprising at least one repeating unit structure of the layout structure.
    Type: Grant
    Filed: May 11, 2011
    Date of Patent: March 12, 2013
    Assignee: Nanya Technology Corp.
    Inventors: Ming-Teng Hsieh, Yi-Nan Chen, Hsien-Wen Liu
  • Patent number: 8384225
    Abstract: A semiconductor device includes a substrate having a top surface and a bottom surface, and a through-silicon via (TSV) extending from the top surface of the substrate to the bottom surface of the substrate, the TSV having a height and a side profile extending along a longitudinal axis, wherein the side profile has an upper segment forming a first angle relative to the longitudinal axis, and a lower segment forming a second angle relative to the longitudinal axis, the second angle being different from the first angle, and wherein the lower segment has a height that is less than 20% of the height of the TSV.
    Type: Grant
    Filed: November 12, 2010
    Date of Patent: February 26, 2013
    Assignee: Xilinx, Inc.
    Inventors: Arifur Rahman, Bahareh Banijamali
  • Publication number: 20130045606
    Abstract: A method includes providing a wafer and providing a first spray bar spaced a distance from the wafer. A first spray is dispensed from the first spray bar onto a first portion (e.g., half) of the wafer. Thereafter, the wafer is rotated. A second spray is dispensed from the first spray bar onto a second portion (e.g., half) of the rotated wafer. In embodiments, a plurality of spray bars are positioned above the wafer. One or more of the spray bars may be tunable in separation distance and/or angle of dispensing.
    Type: Application
    Filed: August 16, 2011
    Publication date: February 21, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd. ("TSMC")
    Inventors: Ming-Hsi Yeh, Kuo-Sheng Chuang, Ying-Hsueh Chang Chien, Chi-Ming Yang, Chin-Hsiang Lin
  • Patent number: 8318607
    Abstract: A method of performing a single step/single solvent edge bead removal (EBR) process on a photolithography layer stack including a photoresist layer and a top coat layer using propylene glycol monomethyl ether acetate (PGMEA) or a mixture of PGMEA and gamma-butyrolactone (GBL) is disclosed. The single step/single solvent EBR process is compatible with organic and inorganic BARC layers.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: November 27, 2012
    Assignee: Texas Instruments Incorporated
    Inventors: Benjamen Michael Rathsack, Mark Howell Somervell
  • Patent number: 8303723
    Abstract: In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.
    Type: Grant
    Filed: December 10, 2009
    Date of Patent: November 6, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Teruomi Minami, Fumihiro Kamimura, Kazuki Kosai, Takashi Yabuta, Kenji Yokomizo, Shogo Mizota
  • Publication number: 20120276749
    Abstract: In a method for processing monocrystalline silicon wafers, which are transported while lying flat along a horizontal transport path, etching solution for texturing the surface is applied from above by means of nozzles or the like. The etching solution is applied from above several times in succession onto the upper side of the silicon substrates, remains there and reacts with the silicon substrate.
    Type: Application
    Filed: December 23, 2010
    Publication date: November 1, 2012
    Applicant: Gebr Schmid GmbH
    Inventors: Dirk Habermann, Martin Schoch, Maher Izaaryene, Friedhelm Stein
  • Patent number: 8283199
    Abstract: Embodiments of the present invention generally provide methods for forming conductive structures on the surfaces of a solar cell. In one embodiment, conductive structures are formed on the front surface of a solar cell by depositing a sacrificial polymer layer, forming patterned lines in the sacrificial polymer via a fluid jet, depositing metal layers over the front surface of the solar cell, and performing lift off of the metal layers deposited over the sacrificial polymer by dissolving the sacrificial polymer with a water based solvent.
    Type: Grant
    Filed: November 24, 2009
    Date of Patent: October 9, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Virendra V. S. Rana, Chris Eberspacher, Karl J. Armstrong, Nety M. Krishna
  • Publication number: 20120225562
    Abstract: Some embodiments include methods of removing noble metal-containing particles from over a substrate. The substrate is exposed to a composition that reduces adhesion between the noble metal-containing particles and the substrate, and simultaneously the substrate is spun to sweep at least some of the noble metal-containing particles off from the substrate. Some embodiments include methods in which tunnel dielectric material is formed across a semiconductor wafer. Metallic nanoparticles are formed across the tunnel dielectric material. A stack of two or more different materials is formed over the metallic nanoparticles. A portion of the stack is covered with a protective mask while another portion of the stack is left unprotected. The unprotected portion of the stack is removed to expose some of the metallic nanoparticles. The semiconductor wafer to is subjected to etchant suitable to undercut at least some of the exposed metallic nanoparticles, and simultaneously the semiconductor wafer is spun.
    Type: Application
    Filed: May 14, 2012
    Publication date: September 6, 2012
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Fatma Arzum Simsek-Ege, Brian Dolan
  • Patent number: 8257605
    Abstract: An apparatus and a method for removing a coating film capable of stable treatment for removing unnecessary coating film at a substrate edge are provided. A substrate is clamped by approach stages from front and rear directions on a chuck, and fixed when accurate registration thereof is achieved. Then, the substrate edge is moved back and forth together with the chuck and the approach stage, so that the edge of the substrate is introduced in a space between an upper piece and a lower piece of a fixed arm portion. While the substrate is being moved, a solvent is fed from a nozzle portion onto a surface thereof and a purge gas is fed through a purge gas feeding pipe, so as to remove the coating film from the surface of the substrate by sucking and discharging the solvent and dissolved coating film through a discharge pipe.
    Type: Grant
    Filed: November 17, 2009
    Date of Patent: September 4, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Shinji Kobayashi, Norihisa Koga
  • Patent number: 8252638
    Abstract: A method for forming an empty area under a layer of a given material, including forming on a substrate a stacking of a photosensitive layer and of a layer of the given material; insolating a portion of the photosensitive layer or its complement according to whether the photosensitive layer is positive or negative with an electron beam crossing the layer of the given material; and removing the portion of the photosensitive layer.
    Type: Grant
    Filed: February 28, 2007
    Date of Patent: August 28, 2012
    Assignee: STMicroelectronics S.A.
    Inventors: Philippe Coronel, Yves Laplanche, Laurent Pain
  • Patent number: 8148271
    Abstract: A substrate processing apparatus comprises a processing chamber for storing a boat supporting multiple substrates and for processing the multiple substrates, a heater unit installed around the processing chamber for heating the substrates, and a coolant gas supply nozzle including a pipe section extending perpendicular to a main surface of the substrate supported in the boat stored in the processing chamber, and a spray hole formed on the pipe section for spraying coolant gas to at least two of the multiple substrates, wherein the coolant gas supply nozzle is formed so that the cross sectional area of the pipe section in the area where the spray hole is formed is larger than the total opening area of the spray hole.
    Type: Grant
    Filed: July 19, 2006
    Date of Patent: April 3, 2012
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Masaaki Ueno, Akira Hayashida, Masakazu Shimada, Takenori Oka
  • Publication number: 20120077348
    Abstract: There is provided a substrate treatment method for performing treatment by feeding a chemical liquid to a surface of a substrate, in which, before feeding the chemical liquid to a predetermined area of the substrate, a liquid substance having a resistivity lower than that of the chemical liquid is fed to the surface of the substrate so that the liquid substance wets at least the predetermined area, and then, the chemical liquid is fed to the predetermined area so that the treatment is performed on the substrate with the chemical liquid fed to the surface of the substrate.
    Type: Application
    Filed: December 6, 2011
    Publication date: March 29, 2012
    Applicant: Sony Corporation
    Inventors: Yoshimichi Shiki, Seiji Oda, Hayato Iwamoto, Yoshiya Hagimoto
  • Publication number: 20120061806
    Abstract: A method of drying a surface of a substrate is provided. The method includes supporting a substrate; rotating the substrate about a rotational center point; applying a liquid to the substrate via a liquid dispenser; applying a drying fluid to the substrate via a drying fluid dispenser; moving the drying fluid dispenser and the liquid dispenser in a direction toward an edge region of the substrate, the drying fluid being applied closer to the rotational center point than the fluid; upon the liquid being applied to the edge region of the substrate, discontinuing application of the liquid while continuing the manipulation of the drying fluid dispenser; and upon the drying fluid being applied to the edge region of the substrate, continuing to apply the drying fluid for a predetermined period of time.
    Type: Application
    Filed: November 15, 2011
    Publication date: March 15, 2012
    Inventors: Zhi (Lewis) Liu, Ismail Kashkoush, Hanjoo Lee
  • Patent number: 8026175
    Abstract: After a liquid chemical treatment is finished, in parallel with a washing away treatment and/or a drying treatment, by spraying from a nozzle for a cleaning liquid supplied by a cleaning line to an outer surface of a nozzle for a liquid chemical, crystals and the like of components of the liquid chemical adhered on the outer surface of the nozzle are removed. In the cleaning treatment, a spraying time of the cleaning liquid is five seconds to ten seconds. In addition, the components of the cleaning liquid is not specifically limited, however, since ammonium phosphate tends to be solved in purified water, if a liquid chemical containing ammonium phosphate is used, it is preferable to use purified water as the cleaning liquid. Depending on the components and the like of the liquid chemical, a solution that can solve the crystals and the like may be used in stead.
    Type: Grant
    Filed: June 28, 2006
    Date of Patent: September 27, 2011
    Assignee: Fujitsu Semiconductor Limited
    Inventor: Tadashi Oshima
  • Patent number: 8007594
    Abstract: A method for manufacturing a semiconductor device includes the step of conducting a cleaning process for a wafer formed with copper wiring lines to remove contaminations produced on a back surface of the wafer. The cleaning process is conducted by injecting onto the back surface of the wafer an etchant for removing contaminations and simultaneously injecting onto a front surface of the wafer a reductant containing hydrogen.
    Type: Grant
    Filed: July 12, 2010
    Date of Patent: August 30, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Young Bang Lee, Kwang Kee Chae, Ok Min Moon
  • Patent number: 7998876
    Abstract: A method of producing a semiconductor element includes the steps of forming a wiring portion layer on a substrate; forming an interlayer insulation layer over the substrate and the wiring portion layer, in which a third insulation film, a second insulation film, and a first insulation film are laminated in this order from the substrate; forming a mask pattern on the first insulation film; removing a contact hole forming area of the first insulation film through a wet etching process; removing a contact hole forming area of the second insulation film through an etching process; removing a contact hole forming area of the third insulation film through an etching process; and a contact hole forming step of forming a contact hole in the interlayer insulation layer so that a surface of the wiring portion layer is exposed.
    Type: Grant
    Filed: March 11, 2010
    Date of Patent: August 16, 2011
    Assignee: Oki Semiconductor Co., Ltd.
    Inventor: Toshiyuki Orita
  • Patent number: 7972969
    Abstract: A method is provided for controlling substrate thickness. At least one etchant is dispensed from at least one dispenser to a plurality of different locations on a surface of a spinning substrate to perform etching. A thickness of the spinning substrate is monitored at the plurality of locations, so that the thickness of the substrate is monitored at each individual location while dispensing the etchant at that location. A respective amount of etching performed at each individual location is controlled, based on the respective monitored thickness at that location.
    Type: Grant
    Filed: March 6, 2008
    Date of Patent: July 5, 2011
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ku-Feng Yang, Wen-Chih Chiou, Weng-Jin Wu, Kewei Zuo