Organic Reactant Patents (Class 438/789)
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Patent number: 8263502Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.Type: GrantFiled: August 11, 2009Date of Patent: September 11, 2012Assignee: Synos Technology, Inc.Inventor: Sang In Lee
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Patent number: 8236708Abstract: Aspects of the disclosure pertain to methods of depositing dielectric layers on patterned substrates. In embodiments, dielectric layers are deposited by flowing BIS(DIETHYLAMINO)SILANE (BDEAS), ozone and molecular oxygen into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface. The deposition of dielectric layers grown according to embodiments may have a reduced dependence on pattern density while still being suitable for non-sacrificial applications.Type: GrantFiled: August 13, 2010Date of Patent: August 7, 2012Assignee: Applied Materials, Inc.Inventors: Sasha Kweskin, Paul Edward Gee, Shankar Venkataraman, Kedar Sapre
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Patent number: 8227358Abstract: Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazine group, wherein X1, X2, X3, and X4 may be the same or different from one another.Type: GrantFiled: March 28, 2011Date of Patent: July 24, 2012Assignee: Air Liquide Electronics U.S. LPInventors: Ziyun Wang, Ashutosh Misra, Ravi Laxman
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Patent number: 8178447Abstract: A method of forming a hydrophobic silicon dioxide layer is provided. A substrate is provided. Thereafter, a hydrophobic silicon dioxide layer is formed on the substrate by using a plasma chemical vapor deposition (CVD) system, in which tetraethyl orthosilicate (TEOS) and an oxygen-containing gas are introduced at a reactive temperature between 25° C. and 150° C. A method of forming an organic thin film transistor (OTFT) including the hydrophobic silicon dioxide layer as a gate insulating layer is also provided. In the present invention, the hydrophobic silicon dioxide layer can be directly formed at low temperature without using the conventional surface modification treatment. Accordingly, the process is simplified and the cost is reduced.Type: GrantFiled: January 14, 2011Date of Patent: May 15, 2012Assignee: National Taiwan University of Science and TechnologyInventors: Ching-Lin Fan, Ping-Cheng Chiu, Chang-Chih Lin
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Patent number: 8163659Abstract: In method and apparatus for oxide film formation, light in an ultraviolet light range is irradiated on a substrate, a starting gas of an organosilicon and an ozone gas are supplied to the substrate to form an oxide film on a surface of the substrate, and the ozone gas is mixed with the starting gas at room temperature and a mixture quantity of the ozone gas with the starting gas is set to be equal to a chemical equivalent or more necessary for totally oxidizing the starting gas.Type: GrantFiled: August 22, 2007Date of Patent: April 24, 2012Assignees: Meidensha Corporation, National Institute of Advanced Industrial Science and TechnologyInventors: Tetsuya Nishiguchi, Naoto Kameda, Shigeru Saitou, Hidehiko Nonaka, Shingo Ichimura
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Patent number: 8153538Abstract: A process is disclosed for annealing a single crystal silicon wafer having a front surface and a back surface, and an oxide layer disposed on the front surface of the wafer extending over substantially all of the radial width. The process includes annealing the wafer in an annealing chamber having an atmosphere comprising oxygen. The process also includes maintaining a partial pressure of water above a predetermined value such that the wafer maintains the oxide layer through the annealing process. The annealed front surface is substantially free of boron and phosphorus.Type: GrantFiled: December 9, 2010Date of Patent: April 10, 2012Assignee: MEMC Electronic Materials, Inc.Inventors: Larry Wayne Shive, Brian Lawrence Gilmore
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Patent number: 8119208Abstract: There is disclosed an apparatus and method for focused electric field enhanced plasma-based ion implantation. The apparatus includes an implantation chamber, a vacuum pump for maintaining the pressure in the implantation chamber at a desired level, a sample holder, means for applying a negative potential to the sample holder, and means for supplying a gaseous or vaporized implantation material. The supplying means takes the form of a feed conduit having an exit opening located in the implantation chamber above the sample holder, and when a negative potential is applied to the sample holder the exit opening of the feed conduit is maintained at a potential that is positive relative to the sample holder.Type: GrantFiled: April 18, 2008Date of Patent: February 21, 2012Assignee: City University of Hong KongInventors: Paul K. Chu, Liuhe Li
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Patent number: 8101531Abstract: Methods and hardware for depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method for forming a thin conformal film comprises, in a first phase, generating precursor radicals off of a surface of the substrate and adsorbing the precursor radicals to the surface to form surface active species; in a first purge phase, purging residual precursor from the process station; in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the surface active species and generate the thin conformal film; and in a second purge phase, purging residual reactant from the process station.Type: GrantFiled: September 23, 2010Date of Patent: January 24, 2012Assignee: Novellus Systems, Inc.Inventors: Ming Li, Hu Kang, Mandyam Sriram, Adrien LaVoie
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Patent number: 8097932Abstract: A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH4) derivatives having the molecular formula SiRR1R2R3, disiloxane derivatives having the molecular formula R4R5R6—Si—O—Si—R7R8R9, and trisiloxane derivatives having the molecular formula R10R11R12—Si—O—Si—R13R14—O—Si—R15R16R17 where R and R1-17 may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents. In addition to the method, the present application also provides SiCOH dielectrics made from the inventive method as well as electronic structures that contain the same.Type: GrantFiled: February 13, 2009Date of Patent: January 17, 2012Assignee: International Business Machines CorporationInventors: Son Van Nguyen, Stephen McConnell Gates, Deborah A. Neumayer, Alfred Grill
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Patent number: 8076251Abstract: Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an oxide, nitride, or oxynitride film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying and exhausting first and second source gases containing the element into and from the process vessel; and (b) changing the layer containing the element into an oxide, nitride, or oxynitride layer by supplying and exhausting reaction gas different from the first and second source gases into and from the process vessel; and unloading the substrate from the process vessel. The first source gas is more reactive than the second source gas, and an amount of the first source gas supplied into the process vessel is set to be less than that of the second source gas supplied into the process vessel.Type: GrantFiled: September 29, 2010Date of Patent: December 13, 2011Assignee: Hitachi Kokusai Electric, Inc.Inventors: Naonori Akae, Yoshiro Hirose, Yushin Takasawa, Yosuke Ota, Ryota Sasajima
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Patent number: 8043975Abstract: Embodiments disclosed herein pertain to silicon dioxide deposition methods using at least ozone and tetraethylorthosilicate (TEOS) as deposition precursors. In one embodiment, a silicon dioxide deposition method using at least ozone and TEOS as deposition precursors includes flowing precursors comprising ozone and TEOS to a substrate under subatmospheric pressure conditions effective to deposit silicon dioxide-comprising material having an outer surface onto the substrate. The outer surface is treated effective to one of add hydroxyl to or remove hydroxyl from the outer surface in comparison to any hydroxyl presence on the outer surface prior to said treating. After the treating, precursors comprising ozone and TEOS are flowed to the substrate under subatmospheric pressure conditions effective to deposit silicon dioxide-comprising material onto the treated outer surface of the substrate. Other embodiments are contemplated.Type: GrantFiled: July 1, 2010Date of Patent: October 25, 2011Assignee: Micron Technology, Inc.Inventors: John Smythe, Gurtej S. Sandhu
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Patent number: 8030219Abstract: A coated substrate product is described comprising a substrate and a dielectric coating material comprising carbon, hydrogen, silicon, and oxygen. According to the method, the substrate is processed by plasma cleaning the surface and then depositing a dielectric coating by a suitable plasma process. The coating may contain one or more layers. The substrate may be a rigid material or a thin film or foil. The coated products of this invention have superior dielectric material properties and utility as substrates for the manufacture of rolled or parallel plate capacitors with high energy densities.Type: GrantFiled: February 7, 2006Date of Patent: October 4, 2011Assignees: Morgan Advanced Ceramics, Inc., K Systems CorporationInventors: Fred M. Kimock, Steven J. Finke, Richard L. C. Wu
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Publication number: 20110201212Abstract: In a method for producing a semiconductor device, two or more kinds of organic siloxane compound materials each having a cyclic SiO structure as a main skeleton and having different structures are mixed and thereafter vaporized. Alternatively, those two or more kinds of organic siloxane compound materials are mixed and vaporized simultaneously to produce a vaporized gas. Then, the vaporized gas is transported to a reaction furnace together with a carrier gas. Then, in the reaction furnace, a porous insulating layer is formed by the plasma CVD method or the plasma polymerization method using the vaporized gas.Type: ApplicationFiled: February 17, 2011Publication date: August 18, 2011Applicant: RENESAS ELECTRONICS CORPORATIONInventors: Hironori YAMAMOTO, Jun KAWAHARA, Tomonori SAKAGUCHI, Yoshihiro HAYASHI
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Publication number: 20110195582Abstract: A method of producing silicon containing thin films by the thermal polymerization of a reactive gas mixture bisaminosilacyclobutane and source gas selected from a nitrogen providing gas, an oxygen providing gas and mixtures thereof. The films deposited may be silicon nitride, silicon carbonitride, silicon dioxide or carbon doped silicon dioxide. These films are useful as dielectrics, passivation coatings, barrier coatings, spacers, liners and/or stressors in semiconductor devices.Type: ApplicationFiled: August 11, 2009Publication date: August 11, 2011Inventor: Xiaobing Zhou
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Patent number: 7985188Abstract: Methods for processing a vessel, for example to provide a gas barrier or lubricity, are disclosed. First and second PECVD or other vessel processing stations or devices and a vessel holder comprising a vessel port are provided. An opening of the vessel can be seated on the vessel port. The interior surface of the seated vessel can be processed via the vessel port by the first and second processing stations or devices. Vessel barrier, lubricity and hydrophobic coatings and coated vessels, for example syringes and medical sample collection tubes are disclosed. A vessel processing system and vessel inspection apparatus and methods are also disclosed.Type: GrantFiled: May 12, 2010Date of Patent: July 26, 2011Assignee: CV Holdings LLCInventors: John T. Felts, Thomas E. Fisk, Robert S. Abrams, John Ferguson, Johathan R. Freedman, Robert J. Pangborn, Peter J. Sagona
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Patent number: 7943531Abstract: A method of depositing a silicon oxide layer over a substrate includes providing a substrate to a deposition chamber. A first silicon-containing precursor, a second silicon-containing precursor and a NH3 plasma are reacted to form a silicon oxide layer. The first silicon-containing precursor includes at least one of Si—H bond and Si—Si bond. The second silicon-containing precursor includes at least one Si—N bond. The deposited silicon oxide layer is annealed.Type: GrantFiled: October 22, 2007Date of Patent: May 17, 2011Assignee: Applied Materials, Inc.Inventors: Srinivas D. Nemani, Abhijit Basu Mallick, Ellie Y. Yieh
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Patent number: 7939442Abstract: Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.Type: GrantFiled: April 10, 2009Date of Patent: May 10, 2011Assignee: Micron Technology, Inc.Inventors: Bhaskar Srinivasan, Vassil Antonov, John Smythe
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Patent number: 7923384Abstract: In a formation method of a porous insulating film by supplying at least organosiloxane and an inert gas to a reaction chamber and forming an insulating film by a plasma vapor deposition method, a partial pressure of the organosiloxane in the reaction chamber is changed by varying a volume ratio of the organosiloxane and the inert gas to be supplied during deposition. Thus, the dielectric constant of the insulating film in the semiconductor device is reduced while the adhesion of the insulating film with other materials is improved. It is desirable that the organosiloxane be cyclic organosiloxane including at least silicon, oxygen, carbon, and hydrogen, and that the total pressure of the reaction chamber be constant during deposition.Type: GrantFiled: November 24, 2006Date of Patent: April 12, 2011Assignee: NEC CorporationInventors: Munehiro Tada, Naoya Furutake, Tsuneo Takeuchi, Yoshihiro Hayashi
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Patent number: 7923386Abstract: A method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided. The method includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer, treating the deposited layer with a plasma, and repeating the exposing and treating until a desired thickness of the layer is obtained. The plasma may be generated from an oxygen-containing gas.Type: GrantFiled: September 16, 2009Date of Patent: April 12, 2011Assignee: Applied Materials, Inc.Inventors: Mihaela Balseanu, Mei-yee Shek, Li-Qun Xia, Hichem M'Saad
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Patent number: 7923385Abstract: Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules with at least one carbon-carbon triple bond, or carbon-carbon double bond, or a combination of these groups and depositing the carbon doped oxide dielectric layer under conditions in which the resulting dielectric layer has a dielectric constant of not greater than about 2.7. Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precursor has carbon-carbon double or triple bonds. In other cases, one or both of the structure former precursor and porogen precursor has one or more bulky organic groups.Type: GrantFiled: June 5, 2009Date of Patent: April 12, 2011Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, Haiying Fu
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Patent number: 7923380Abstract: A substrate processing apparatus includes a processing chamber that processes a substrate, and a substrate placing base enclosed in the processing chamber, and a substrate transporting member that allows the substrate to wait temporarily on the substrate placing base, and exhaust holes provided so as to surround the substrate placing base, and a retracting space that allows the substrate transporting member to move in between lines each connecting the exhaust hole and an upper end of the substrate placing base and the substrate placing base.Type: GrantFiled: September 11, 2009Date of Patent: April 12, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Hidehiro Yanai, Masakazu Sakata, Akira Takahashi
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Patent number: 7915139Abstract: The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.Type: GrantFiled: July 23, 2009Date of Patent: March 29, 2011Assignee: Novellus Systems, Inc.Inventors: Chi-I Lang, Judy H. Huang, Michael Barnes, Sunil Shanker
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Patent number: 7915181Abstract: Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents.Type: GrantFiled: January 26, 2004Date of Patent: March 29, 2011Assignee: Honeywell International Inc.Inventors: Wenya Fan, Victor Lu, Michael Thomas, Brian Daniels, Tiffany Nguyen, De-Ling Zhou, Ananth Naman, Lei Jin, Anil Bhanap
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Patent number: 7915180Abstract: A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant.Type: GrantFiled: April 17, 2009Date of Patent: March 29, 2011Assignee: International Business Machines CorporationInventors: Stephen M. Gates, Alfred Grill, Robert D. Miller, Deborah A. Neumayer, Son Nguyen
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Patent number: 7902084Abstract: Embodiments disclosed herein pertain to silicon dioxide deposition methods using at least ozone and tetraethylorthosilicate (TEOS) as deposition precursors. In one embodiment, a silicon dioxide deposition method using at least ozone and TEOS as deposition precursors includes flowing precursors comprising ozone and TEOS to a substrate under subatmospheric pressure conditions effective to deposit silicon dioxide-comprising material having an outer surface onto the substrate. The outer surface is treated effective to one of add hydroxyl to or remove hydroxyl from the outer surface in comparison to any hydroxyl presence on the outer surface prior to said treating. After the treating, precursors comprising ozone and TEOS are flowed to the substrate under subatmospheric pressure conditions effective to deposit silicon dioxide-comprising material onto the treated outer surface of the substrate. Other embodiments are contemplated.Type: GrantFiled: July 5, 2007Date of Patent: March 8, 2011Assignee: Micron Technology, Inc.Inventors: John Smythe, Gurtej S. Sandhu
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Patent number: 7897521Abstract: Disclosed is a low dielectric constant plasma polymerized thin film using linear organic/inorganic precursors and a method of manufacturing the low dielectric constant plasma polymerized thin film through plasma enhanced chemical vapor deposition and annealing using an RTA apparatus. The low dielectric constant plasma polymerized thin film is effective for the preparation of multilayered metal thin films having a thin film structure with very high thermal stability, a low dielectric constant, and superior mechanical properties.Type: GrantFiled: August 14, 2008Date of Patent: March 1, 2011Assignee: Sungkyunkwan University Foundation For Corporate CollaborationInventors: Donggeun Jung, Sungwoo Lee, Jihyung Woo
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Patent number: 7892648Abstract: A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC?CH, C?CH2, C?C or a [S]n linkage, where n is a defined above.Type: GrantFiled: January 21, 2005Date of Patent: February 22, 2011Assignee: International Business Machines CorporationInventors: Daniel C. Edelstein, Stephen M. Gates, Alfred Grill, Michael Lane, Robert D. Miller, Deborah A. Neumayer, Son Van Nguyen
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Patent number: 7888233Abstract: Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.Type: GrantFiled: March 25, 2009Date of Patent: February 15, 2011Assignee: Novellus Systems, Inc.Inventors: Vishal Gauri, Raashina Humayun, Chi-I Lang, Judy H. Huang, Michael Barnes, Sunil Shanker
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Patent number: 7883986Abstract: This invention includes methods of forming trench isolation. In one implementation, isolation trenches are provided within a semiconductor substrate. A liquid is deposited and solidified within the isolation trenches to form a solidified dielectric within the isolation trenches. The dielectric comprises carbon and silicon, and can be considered as having an elevationally outer portion and an elevationally inner portion within the isolation trenches. At least one of carbon removal from and/or oxidation of the outer portion of the solidified dielectric occurs. After such, the dielectric outer portion is etched selective to and effective to expose the dielectric inner portion. After the etching, dielectric material is deposited over the dielectric inner portion to within the isolation trenches.Type: GrantFiled: October 1, 2009Date of Patent: February 8, 2011Assignee: Micron Technology, Inc.Inventor: Li Li
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Patent number: 7867922Abstract: The present invention is a film forming method for an SiOCH film, comprising a unit-film-forming step including: a deposition step of depositing an SiOCH film element by using an organic silicon compound as a raw material and by using a plasma CVD method; and a hydrogen plasma processing step of providing a hydrogen plasma process to the deposited SiOCH film element, wherein the unit-film-forming step is repeated several times so as to form an SiOCH film on a substrate.Type: GrantFiled: December 5, 2006Date of Patent: January 11, 2011Assignee: Tokyo Electron LimitedInventors: Shinji Ide, Yasuhiro Oshima, Yusaku Kashiwagi
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Patent number: 7863203Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.Type: GrantFiled: January 24, 2008Date of Patent: January 4, 2011Assignee: Advanced Technology Materials, Inc.Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum
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Patent number: 7855154Abstract: A cap layer that enables a photopatternable, spin-on material to be used in the formation of semiconductor device structures at wavelengths that were previously unusable. The photopatternable, spin-on material is applied as a layer to a semiconductor substrate. The cap layer and a photoresist layer are each formed over the photopatternable layer. The cap layer absorbs or reflects radiation and protects the photopatternable layer from a first wavelength of radiation used in patterning the photoresist layer. The photopatternable, spin-on material is convertible to a silicon dioxide-based material upon exposure to a second wavelength of radiation.Type: GrantFiled: March 29, 2006Date of Patent: December 21, 2010Assignee: Micron Technology, Inc.Inventors: Weimin Li, Gurtej S. Sandhu
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Patent number: 7851385Abstract: The present invention generally provides apparatus and method for processing a semiconductor substrate. Particularly, embodiments of the present invention relate to a method and apparatus for forming semiconductor devices having a conformal silicon oxide layer formed at low temperature. One embodiment of the present invention provides a method for forming a semiconductor gate structure. The method comprises forming a gate stack on a semiconductor substrate, forming a conformal silicon oxide layer on the semiconductor substrate using a low temperature cyclic method, and forming a spacer layer on the conformal silicon oxide layer.Type: GrantFiled: September 30, 2008Date of Patent: December 14, 2010Assignee: Applied Materials, Inc.Inventors: Matthew Spuller, Melody Agustin, Meiyee (Maggie Le) Shek, Li-Qun Xia, Reza Arghavani
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Publication number: 20100304566Abstract: Silicon oxide based low-k dielectric materials may receive superior hydrophobic surface characteristics on the basis of a plasma treatment using hydrogen and carbon containing radicals. For this purpose, the surface of the low-k dielectric material may be exposed to these radicals, at least in one in situ process in combination with another reactive plasma ambient, for instance used for patterning the low-k dielectric material. Consequently, superior surface characteristics may be established or re-established without significantly contributing to product cycle time.Type: ApplicationFiled: May 25, 2010Publication date: December 2, 2010Inventors: Daniel Fischer, Matthias Schaller
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Publication number: 20100283118Abstract: A method for manufacturing a SeOI substrate that includes a thin working layer made from one or more semiconductor material(s); a support layer; and a thin buried oxide layer between the working layer and the support layer. The method includes a manufacturing step of an intermediate SeOI substrate having a buried oxide layer with a thickness greater than a thickness desired for the thin buried oxide layer; and a dissolution step of the buried oxide layer in order to form therewith the thin buried oxide layer. After the dissolution step, an oxidation step of the substrate is conducted for creating an oxidized layer on the substrate, and an oxide migration step for diffusing at least a part of the oxide layer through the working layer in order to increase the electrical interface quality of the substrate and decrease its Dit value.Type: ApplicationFiled: February 20, 2008Publication date: November 11, 2010Applicant: S.O.I.TEC SILICON ON INSULATION TECHNOLOGIESInventors: Oleg Kononchuk, George K. Celler
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Patent number: 7825044Abstract: Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer filling a portion of a trench on the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may further include depositing additional silicon oxide over the cured silicon oxide to fill the trench. The methods may also include removing the acidic vapor from the semiconductor processing chamber.Type: GrantFiled: June 17, 2010Date of Patent: November 2, 2010Assignee: Applied Materials, Inc.Inventors: Abhijit Basu Mallick, Srinivas D. Nemani, Timothy W. Weidman
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Publication number: 20100255684Abstract: In method and apparatus for oxide film formation, light in an ultraviolet light range is irradiated on a substrate, a starting gas of an organosilicon and an ozone gas are supplied to the substrate to form an oxide film on a surface of the substrate, and the ozone gas is mixed with the starting gas at room temperature and a mixture quantity of the ozone gas with the starting gas is set to be equal to a chemical equivalent or more necessary for totally oxidizing the starting gas.Type: ApplicationFiled: August 22, 2007Publication date: October 7, 2010Inventors: Tetsuya Nishiguchi, Naoto Kameda, Shigeru Saitou, Hidehiko Nonaka, Shingo Ichimura
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Patent number: 7803721Abstract: A semiconductor device includes a deposited-type insulating film disposed on a substrate; a coating-type insulating film disposed on a surface of the deposited-type insulating film and having a film density which is lower than a film density of the deposited-type insulating film; and an intermediate insulating film disposed between the deposited-type insulating film and the coating-type insulating film and having a film density which is intermediate between the film density of the deposited-type insulating film and the film density of the coating-type insulating film.Type: GrantFiled: March 14, 2007Date of Patent: September 28, 2010Assignee: Kabushiki Kaisha ToshibaInventor: Kazuaki Iwasawa
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Patent number: 7799705Abstract: Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precursor has carbon-carbon double or triple bonds. In other cases, one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. In other cases, the structure former precursor has carbon-carbon double or triple bonds and one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. Once the precursor film is formed, the porogen is removed, leaving a porous low-k dielectric matrix with high mechanical strength. Different types of structure former precursors and porogen precursors are described. The resulting low stress low-k porous film may be used as a low-k dielectric film in integrated circuit manufacturing applications.Type: GrantFiled: January 5, 2009Date of Patent: September 21, 2010Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, Haiying Fu, David C. Smith, David Mordo
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Patent number: 7790634Abstract: Methods of making a silicon oxide layer on a substrate are described. The methods may include forming the silicon oxide layer on the substrate in a reaction chamber by reacting an atomic oxygen precursor and a silicon precursor and depositing reaction products on the substrate. The atomic oxygen precursor is generated outside the reaction chamber. The methods also include heating the silicon oxide layer at a temperature of about 600° C. or less, and exposing the silicon oxide layer to an induced coupled plasma. Additional methods are described where the deposited silicon oxide layer is cured by exposing the layer to ultra-violet light, and also exposing the layer to an induced coupled plasma.Type: GrantFiled: May 25, 2007Date of Patent: September 7, 2010Assignee: Applied Materials, IncInventors: Jeffrey C. Munro, Srinivas D. Nemani
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Patent number: 7781351Abstract: Methods of preparing a carbon doped oxide (CDO) layer of low dielectric constant and low residual stress involving, for instance, providing a substrate to a deposition chamber and exposing it to an organosilicon precursor containing unsaturated C—C bonds or to multiple organic precursors including at least one organosilicon and at least one unsaturated C—C bond are provided. The methods may also involve igniting and maintaining a plasma in a deposition chamber using radio frequency power having high and low frequency components with a high percentage of the low frequency component, and depositing the carbon doped dielectric layer under conditions in which the resulting dielectric layer has a residual stress of not greater than, e.g., about 50 MPa, and a dielectric constant not greater than about 3.Type: GrantFiled: April 7, 2004Date of Patent: August 24, 2010Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, Haiying Fu, Dong Niu, Ananda K. Bandyopadhyay, David Mordo
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Patent number: 7781352Abstract: A method of forming an inorganic silazane-based dielectric film includes: introducing a gas constituted by Si and H and a gas constituted by N and optionally H into a reaction chamber where an object is placed; controlling a temperature of the object at ?50° C. to 50° C.; and depositing by plasma reaction a film constituted by Si, N, and H containing inorganic silazane bonds.Type: GrantFiled: June 6, 2007Date of Patent: August 24, 2010Assignee: ASM Japan K.K.Inventors: Atsuki Fukazawa, Nobuo Matsuki, Jeongseok Ha
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Patent number: 7745352Abstract: Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer overlying at least a portion of the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods may also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may also include removing the acidic vapor from the semiconductor processing chamber. Systems to deposit a silicon oxide layer on a substrate are also described.Type: GrantFiled: August 27, 2007Date of Patent: June 29, 2010Assignee: Applied Materials, Inc.Inventors: Abhijit Basu Mallick, Srinivas D. Nemani, Timothy W. Weidman
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Patent number: 7732345Abstract: The present invention provides a method for manufacturing an integrated circuit. In one embodiment, the method includes etching one or more openings within a substrate using an etch tool, and subjecting the one or more openings to a post-etch clean, wherein a delay time exists between removing the substrate from the etch tool and the subjecting the one or more opening to the post-etch clean. This method may further include exposing the substrate having been subjected to the post-etch clean to a rinsing agent, wherein a resistivity of the rinsing agent is selected based upon the delay time.Type: GrantFiled: August 31, 2006Date of Patent: June 8, 2010Assignee: Texas Instruments IncorporatedInventors: Phillip Daniel Matz, Trace Hurd
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Patent number: 7709371Abstract: A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stable dielectric properties in these films. The method deters the formation of stress-induced voids in these films. An organosilicate glass dielectric film is patterned to form vias and trenches by subjecting it to an etchant or ashing reagent in such a way as to remove at least a portion of previously existing carbon containing moieties and reduce hydrophobicity of said organosilicate glass dielectric film. The vias and trenches are thereafter filled with a metal and subjected to an annealing treatment.Type: GrantFiled: September 15, 2004Date of Patent: May 4, 2010Assignee: Honeywell International Inc.Inventors: Anil S. Bhanap, Teresa A. Ramos, Nancy Iwamoto, Roger Y. Leung, Ananth Naman
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Patent number: 7709399Abstract: The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one ?-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates.Type: GrantFiled: July 29, 2008Date of Patent: May 4, 2010Assignee: Micron Technology, Inc.Inventor: Timothy A. Quick
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Patent number: 7695765Abstract: Methods of preparing a carbon doped oxide (CDO) layer with a low dielectric constant (<3.2) and low residual stress without sacrificing important integration properties such as refractive index and etch rate are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to TMSA, followed by igniting and maintaining a plasma in a deposition chamber using radio frequency power having high and low frequency components or one frequency component only, and depositing the carbon doped oxide film under conditions in which the resulting dielectric layer has a net tensile stress of less than about 40 MPa, a hardness of at least about 1 GPa, and a SiC:SiOx bond ratio of not greater than about 0.75.Type: GrantFiled: November 12, 2004Date of Patent: April 13, 2010Assignee: Novellus Systems, Inc.Inventors: Keith Fox, Carole Mars, Willis Kirkpatrick, Easwar Srinivasan
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Patent number: 7682977Abstract: This invention includes methods of forming trench isolation. In one implementation, isolation trenches are provided within a semiconductor substrate. A liquid is deposited and solidified within the isolation trenches to form a solidified dielectric within the isolation trenches. The dielectric comprises carbon and silicon, and can be considered as having an elevationally outer portion and an elevationally inner portion within the isolation trenches. At least one of carbon removal from and/or oxidation of the outer portion of the solidified dielectric occurs. After such, the dielectric outer portion is etched selective to and effective to expose the dielectric inner portion. After the etching, dielectric material is deposited over the dielectric inner portion to within the isolation trenches.Type: GrantFiled: May 11, 2006Date of Patent: March 23, 2010Assignee: Micron Technology, Inc.Inventor: Li Li
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Patent number: 7678665Abstract: A method for imparting stress to the channel region of a transistor is provided. In accordance with the method, a semiconductor layer (307) is provided which has a dielectric layer (305) disposed beneath it. A trench (319) is created which extends through the semiconductor layer and into the dielectric layer, and the trench is backfilled with a stressor material (320), thereby forming a trench isolation structure. A channel region (326) is defined in the semiconductor layer adjacent to the trench isolation structure.Type: GrantFiled: March 7, 2007Date of Patent: March 16, 2010Assignee: Freescale Semiconductor, Inc.Inventors: Michael D. Turner, Suresh Venkatesan, Kurt H. Junker
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Patent number: 7674721Abstract: A method of forming a multi-layered insulation film includes forming a first insulation layer using a first feed gas, the first insulation layer including methyl silsesquioxane (MSQ), forming a second insulation layer using a second feed gas, the second insulation layer including a polysiloxane compound having an Si—H group such that the second insulation layer is in contact with a top of the first insulation layer, and forming a third insulation layer including an inorganic material such that the third insulation layer is in contact with a top of the second insulation layer.Type: GrantFiled: May 2, 2007Date of Patent: March 9, 2010Assignee: NEC Electronics CorporationInventor: Tatsuya Usami