Abstract: A ceramic polishing pad dresser and the method for fabricating the same are provided. Abrasive particles are adhered onto a ceramic substrate by heating a ceramic powder to be vitrified, thus forming a ceramic diamond disk. Meanwhile, a plastic base is mounted on the bottom of the ceramic diamond disk. As for heating the ceramic powder to be vitrified, the ceramic powder with low melting point is disposed on the ceramic substrate, and to be heated to form a vitrified adhering layer, so as to adhere the abrasive particles disposed thereon to the ceramic substrate. The plastic base mounted on the bottom of the ceramic diamond disk is provided for bearing the ceramic diamond disk and has corresponding screw holes and positioning holes formed thereon for fitting the chemical mechanical polishing table to be mounted and reducing the manufacturing cost.

Abstract: Disclosed are CMP conditioners which can suppress microscratching of the surface of a semiconductor substrate and can realize stable CMP conditioner properties. The CMP conditioner according to the first aspect of the present invention comprises a support member and a plurality of hard abrasive grains provided on a surface of the support member, wherein the plurality of hard abrasive grains are regularly arranged on the surface of the support member. The CMP conditioner according to the second aspect of the present invention comprises a support member and a plurality of hard abrasive grains provided on the surface of the support member, wherein the plurality of hard abrasive grains are arranged on the surface of the support member regularly and so as for the density of the hard abrasive grains to decrease from the inner side of the support member toward the outer side of the support member.

Abstract: A polishing apparatus for polishing a substrate comprises a polishing table having a polishing surface, and a substrate holding apparatus for holding a substrate to be polished and pressing the substrate against the polishing surface. The substrate holding apparatus comprises a vertically movable top ring body for holding a substrate, and a fluid supply source for supplying a fluid under a positive pressure or a negative pressure to a hermetically sealed chamber which is defined in the top ring body so as to control pressure under which the substrate is pressed against the polishing surface. The substrate holding apparatus further comprises a measuring device disposed in a fluid passage interconnecting the hermetically sealed chamber and the fluid supply source for measuring a flow rate of the fluid in the fluid passage.

Abstract: A method for cleaning a polishing pad is disclosed. In CMP and ECMP, a polishing pad must be conditioned to obtain good and predictable polishing results. During conditioning, debris is generated that must be removed to prevent processing defects. An effective method to clean a polishing pad is disclosed herein. In one embodiment, a washing fluid is directed at the pad to clean debris from the while a second fluid is utilized to remove the washing fluid. In another embodiment, the washing fluid is provided by a high pressure water jet while the second fluid is provided by an air knife.

Abstract: A method and apparatus for cleaning a web-based chemical-mechanical planarization (CMP) system. Specifically, a fluid spray bar is coupled to a frame assembly which may be mounted on a CMP system. The fluid spray bar will move along the frame assembly. As the fluid spray bar traverses the length of the frame assembly, a cleaning fluid is sprayed onto the web in order to clean the web between planarization cycles.

Abstract: An extremely precise computer controlled grinding machine having the capability to write its own computer programs for controlling the grinding machine to perform individual tasks, including both grinding and dressing to several millionths of an inch. A new device for dressing is included which is directly on the machine, alleviating the need for a separate dressing machine. The Windows-based computer program is easy to use, and includes numerous features for self-maintenance and reproducibility.

Abstract: This polishing apparatus includes a head that holds a semiconductor wafer, a polishing pad that polishes a surface to be polished of the semiconductor wafer held by the head, and a dresser that reconditions the polishing pad by cutting the polishing pad. The polishing apparatus polishes a surface to be polished of the semiconductor wafer while causing the head and the polishing pad to rotate and reconditions the polishing pad by use of the dresser before and after polishing the surface to be polished. The polishing apparatus of the present invention supports at least two said dressers so that the dressers can rotate on their own axes and further includes a dresser oscillator that causes the dressers to oscillate simultaneously on the polishing pad.

Abstract: A dresser adapted to a chemical mechanical polishing apparatus is used to perform dressing on a polishing pad for polishing a semiconductor wafer such that a circular-shaped support surface thereof is positioned opposite to and in contact with the polishing surface of the polishing pad. In the dresser, at least three polish retainers having band-like shapes are formed and elongated in radial directions from substantially the center of the support surface so as to form a plurality of sectorial regions. A plurality of parallel portions are formed in parallel with the polish retainer in each sectorial region. A plurality of band-shaped non-polish retainers are formed between the polish retainer and its parallel portion in each sectorial region. The dresser ensures adequate fuzziness of the polishing pad by way of dressing; hence, it is possible to maintain desired polishing performance of the polishing pad for a long time.

Abstract: A film feeder (FF1) feeds a film (1), a first drive (20) rotates a work (W), a second drive (30) moves the work (W) relative to the film (1), a shoe set handler (40) handles the shoe set (2) to press the film (1) against the work (W), and a deterioration delayer (C) is configured to delay an abrasivity deterioration of the film (1).

Abstract: A system and method are described for manufacturing a lapping plate. Diamond particles are premixed with a metal matrix. The diamond particles are electro-deposited onto the surface of a lapping plate. The lapping plate may have a substrate of hard metal with a soft metal coating. The metal matrix and the lapping plate may be the same metal. The metal matrix may be tin, copper, nickel, or silver. The metal matrix may be an alloy of tin, copper, nickel, or silver. The diamond particles may be between 0.1 and 0.25 microns in size. Multiple uniform layers of the diamond particles and metal matrix may be stacked on the lapping plate.

Abstract: The invention relates to a method for determining the number of active diamonds on a conditioning disk. In particular, the method comprises (a) contacting a diamond conditioner disk with a hard surface, wherein the diamond-containing side of the diamond conditioning disk is facing the hard surface, (b) moving the diamond conditioner disk under a load across the hard surface so as to cause any active diamonds present on the diamond-containing side of the diamond conditioner disk to leave a mark corresponding to each active diamond, and (c) counting the marks to determine the number of active diamonds on the diamond conditioner disk.

Abstract: A method and system for pad conditioning in an electrochemical mechanical planarization (eCMP) tool is disclosed. A polishing pad having a pad electrode is placed onto a platen of the eCMP tool. A conditioning disk, having a second electrode is placed on the polishing pad, such that the pad electrode and conditioning disk form an electrode pair. An electric potential is established between the conditioning disk and the pad electrode. This causes debris from the polishing pad to become ionized, and attracted to the conditioning disk. The conditioning disk is then removed from the eCMP tool, allowing the eCMP tool to resume operation on normal semiconductor wafers.

Abstract: An apparatus for breaking in new pad conditioning disks for use in a chemical mechanical polishing (CMP) system that polishes a semiconductor wafer by pressing the semiconductor wafer against a moving polishing pad. The apparatus comprises a break-in head that is removably attached to a drive shaft to which a polishing head that holds the semiconductor wafer is normally attached. The break-in head holds multiple pad conditioning disks and presses the plurality of pad conditioning disks against the moving polishing pad. The break-in head comprises a drive mechanism for rotating the multiple pad conditioning disks. The drive mechanism is coupled to the drive shaft and rotates the multiple pad conditioning disks by translating a rotating motion of the drive shaft into rotating motions of the multiple pad conditioning disks.

Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 ?m/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.

Abstract: A method of reducing a degree of compression of a CMP pad during conditioning of the CMP pad comprises engaging the CMP pad with at least one superhard cutting element, the cutting element including a cutting face, the cutting face being angled at 90 degrees or less relative to a finished surface of the CMP pad; and moving the CMP pad and the cutting element relative to one another in a direction resulting in removal of material from the CMP pad with the cutting face to thereby condition the CMP pad.

Abstract: A method of fabricating a semiconductor device includes a polishing process of a substrate, wherein the polishing process includes the steps of applying a chemical mechanical polishing process to the substrate on a polishing pad while using slurry, and conditions a surface of the polishing pad, the conditioning step including the step of grinding the surface of said polishing pad by at least first and second conditioning disks of respective, different surface states.

Abstract: To provide a CMP conditioner that prevents dissolution of metals in slurry, without the chipping of the abrasive grains and/or decreasing the cutting performance. The CMP apparatus has a polishing pad that faces and contacts conditioning surface of the conditioner body. On this conditioning surface, abrasive grains are distributed and fixed to form abrasive grain layer, thus forming the CMP conditioner. The conditioner body is made of ceramics, the abrasive grains in the abrasive grain layer are held by binding phase made of low temperature co-fired ceramics.

Abstract: A glass substrate for an information recording medium is manufactured by polishing the surface of a raw material glass plate. The polishing of the raw material glass plate is divided into a step for performing a first polishing process to roughly polish the surface of the raw material glass plate to be smooth and a step for performing a second polishing process to finely polish the surface of the roughly polished raw material glass plate to be smoother. The first polishing process uses a polishing pad made of a synthetic resin foam and slides the polishing pad on the raw material glass plate surface while supplying a polishing agent to roughly polish the surface. A pad dressing process is performed on the polishing pad before being used in the first polishing process. The pad dressing process polishes the surface of the polishing pad by sliding the polishing pad on a pad dresser including abrasive grains.

Abstract: An off-line tool for breaking in pad conditioning disks used in a chemical mechanical polishing (CMP) system. The off-line tool comprises a platen having a first surface for holding a polishing pad and a motor for rotating the polishing pad. The motor is coupled to the platen via a first drive shaft. The off-line tool further comprises a mechanical drive assembly for holding a second drive shaft in a position proximate the first surface of the platen and a first break-in head removably attached to the second drive shaft. The first break-in head receives a first pad conditioning disk and the second drive shaft moves the first break-in head toward the platen, thereby pressing the first pad conditioning disk against the polishing pad on the platen.

Abstract: A conditioner disk for use on a polish pad in chemical mechanical polishing process includes a base structure a plurality of curved blades supported by the base structure. The blades radiate outwardly from a center region of the base structure and curve in a common direction.

Abstract: The present invention relates to a composite material and the method of making same, which comprises a CVD diamond coating applied to a composite substrate of ceramic material and an unreacted carbide-forming material of various configurations and for a variety of applications. One example of the composite material is a composite of SiC and free silicon metal known as Reaction-Bonded Silicon Carbide. Several examples of applications of the invention include: 1) heads or disks for conditioning polishing pads, including pads used in Chemical-Mechanical-Planarization, 2) cutting and dressing tool inserts and tips, 3) heat spreaders for electronic devices, and 4) wear components including mechanical seals and pump seals.

Abstract: The present invention provides: a pad conditioner for dressing a surface of a polishing pad which is used in a polishing apparatus for polishing works, comprising a bending or deflecting or elastic member and a supporting section to support a base end of the bending or deflecting or elastic member, wherein upon contact of a vicinity of a tip end of the bending or deflecting or elastic member with the polishing pad, the bending or deflecting or elastic member elastically deforms, so that a pressure necessary to condition the pad is generated; a polishing apparatus using the pad conditioner; and a pad conditioning method using the same, in order to evenly condition a polishing pad of an elastic body by following a surface of the polishing pad.

Abstract: An object of the present invention is to provide a polishing method and a polishing apparatus that can secure an even polished shape and can remove slurry that has contributed to polishing and contains polishing by-product to the outside of a pad efficiently to reduce scratches due to the polishing by-product, and can suppress consumption of slurry to the minimum to realize cost reduction during running for mass production.

Abstract: A gear grinding machine, a method for dressing a threaded grinding wheel, and a method for grinding a work are disclosed. A dressing tool is rotated in a vertical plane, with its position being fixed. The position of a threaded grinding wheel is NC-controlled, whereby the dressing tool is brought into contact with the starting point of the thread of the threaded grinding wheel at a somewhat lower surface of the circumferential surface of the threaded grinding wheel and, in accordance with the rotation of the threaded grinding wheel, the position of contact of the dressing tool with the threaded grinding wheel is moved along the circumferential surface of the threaded grinding wheel.

Abstract: A method facilitates fabricating a coupling including a first annular coupling member and a second annular coupling member. The method comprises coupling the first coupling member to a machine assembly that includes a plurality of grinding wheels coupled to a tool storage member, machining a plurality of troughs in the first coupling member using at least one of the plurality of grinding wheels, such that at least one projection is defined between adjacent troughs, coupling the second coupling member to the machine assembly, and machining a plurality of troughs in the second coupling member using at least one of the plurality of grinding wheels, such that the second coupling member is configured to rotatably couple to the first coupling member.

Abstract: First and second end surface truing sections are formed by protruding cylindrical first and second base bodies from opposite end surfaces of a disc-like base of an opposite end surface truing tool in the axial direction thereof and by providing on the external surface of the first base body and the internal surface of the second base body first and second abrasive grain layers in which numerous diamond abrasive grains are adhered with bond material. The rotational axis of the opposite end surface truing tool is inclined relative to the rotational axis of the grinding wheel within almost the same plane at a predetermined inclination angle.

Abstract: A truing tool for a grindstone (1) is intended for attachment to a universal support (3) in the form of a cylindrical rod of a grinding machine in parallel with the rotation axis of the grindstone. It has—in a holder (12) therefore—a cutting tip (13) for truing engagement with the grindstone. The holder (12) is movably connected to a yoke (10)—to be attached to the universal support (3)—by a feeding rod (14), which is rotatably supported by the yoke (10) and is in engagement with a threaded bore in the holder (12), for its movement in relation to the yoke transversely of the grindstone (1).

Abstract: A method and apparatus for conditioning a conductive polishing material is described. In one embodiment, the pad dresser comprises a backing plate adapted to coupled to a conditioning head assembly, the backing plate comprising a rigid disk having a first side and an opposing second side, the second side having a perpendicular orientation to a centerline of the backing plate, and an annular member having a base portion adhered to the second side of the backing plate, wherein the annular member defines a conditioning surface opposite the second side that is radially sloped relative to a plane of the second side.

Abstract: The present invention provides: a pad conditioner for dressing a surface of a polishing pad which is used in a polishing apparatus for polishing works, comprising a bending or deflecting or elastic member and a supporting section to support a base end of the bending or deflecting or elastic member, wherein upon contact of a vicinity of a tip end of the bending or deflecting or elastic member with the polishing pad, the bending or deflecting or elastic member elastically deforms, so that a pressure necessary to condition the pad is generated; a polishing apparatus using the pad conditioner; and a pad conditioning method using the same, in order to evenly condition a polishing pad of an elastic body by following a surface of the polishing pad.

Abstract: A method of making and the resulting non-metallic CMP conditioning pad comprising a non-metallic substrate and a single layer of abrasive particles bonded to the substrate by a non-metallic bonding medium. Preferred substrates include aluminum oxide and graphite. A bonding system employing finely powdered aluminum oxide particles mixed with a suitable adhesive is employed to bond the abrasive layer to the aluminum oxide substrate. Silicon carbide particles mixed into a compatible adhesive carrier including a polymer composition is preferred for bonding the abrasive particle layer to a graphite or carbide substrate.

Abstract: Disclosed are various embodiments of an EDM electrode dressing template comprising a body made of an electrically conductive material. Bonded to the body is a pad with an electrically conductive material with hardness greater than the body. An electrode with an eroded end is positioned proximate the pad and a DC current pulses between the eroded end and the pad. After a period of time, the eroded end is shaped into a dressed tip. Since the pad is less susceptible to spark erosion than the body, the electrode is more consistently dressed and the template is replaced less frequently.

Abstract: In a first aspect, a first apparatus is provided for a chemical mechanical polishing (CMP) process. The first apparatus includes (1) a rotatable member; (2) an end effector adapted to receive and retain a conditioning disk; and (3) an elastic device disposed between the rotatable member and the end effector. The elastic device is (a) adapted to rotate the end effector via a torque from the rotatable member, and (b) flexibly extensible so as to impart a force to the end effector while permitting the end effector to deviate from a perpendicular alignment with the rotatable member in order for a conditioning surface of the conditioning disk to conform to an irregular polishing surface of a pad being conditioned. Numerous other aspects are provided, including methods and apparatus for using liquid or gas to deter polishing slurry or debris from entering the conditioning head.

Abstract: A chemical-mechanical polishing apparatus is provided with a downstream device for conditioning a web-shaped polishing pad. The device may be used to condition a glazed portion of the pad, and then the conditioned pad portion may be used again for polishing. The conditioning device is preferably arranged to apply different conditioning treatments to different portions of the glazed pad. The conditioning device may have roller segments that rotate at different speeds. Alternatively, the device may have non-cylindrical rollers that provide different rotational speeds at the pad surface, or the device may apply different pressures at different portions of the pad. The device may be arranged to provide uniform conditioning across the width of the pad. The invention is applicable to methods of planarizing semiconductor wafers. The invention may be used to condition circular pads in addition to web-shaped pads.

Abstract: A method and apparatus for measuring an abrasion amount and a friction force of a polishing pad using a thickness change of a slurry film in a chemical mechanical polishing operation are provided. In a preferred method, for example, a first displacement of a semiconductor wafer with respect to a polishing pad is measured during an initial stage and a first reference range of the thickness change of the slurry film is preferably set to determine a replacement time corresponding to the abrasion amount of the polishing pad. A conditioning condition of the polishing pad conditioning can also be set, and a second displacement of the semiconductor wafer with respect to the polishing pad can be measured when the surface of the semiconductor wafer is polished by the polishing pad. The first displacement is then preferably compared with the second displacement to calculate the thickness change of the slurry film formed between the polishing pad and the semiconductor wafer.

Abstract: A chemical-mechanical polishing apparatus is provided with a downstream device for conditioning a web-shaped polishing pad. The device may be used to condition a glazed portion of the pad, and then the conditioned pad portion may be used again for polishing. The conditioning device is preferably arranged to apply different conditioning treatments to different portions of the glazed pad. The conditioning device may have roller segments that rotate at different speeds. Alternatively, the device may have non-cylindrical rollers that provide different rotational speeds at the pad surface, or the device may apply different pressures at different portions of the pad. The device may be arranged to provide uniform conditioning across the width of the pad. The invention is applicable to methods of planarizing semiconductor wafers. The invention may be used to condition circular pads in addition to web-shaped pads.

Abstract: In one embodiment, a method for cleaning a chemical mechanical polishing (CMP) pad is provided. The CMP pad surface has a residue thereon. Chemicals are applied onto the surface of the CMP pad and the pad surface is rinsed so as to substantially remove by-product produced by the chemicals. A mechanical conditioning operation is performed on the surface of the pad. The wafer surface includes copper and oxide during the CMP operation.

Abstract: Apparatus and methods for conditioning a polishing pad include a base, an arm pivotally coupled to the base and adapted to support a conditioning disk, and an actuator coupled to the base and the arm. The actuator is adapted to cause the arm to press the conditioning disk against the polishing pad with a linearly variable amount of force. A first force is produced with the actuator. The first force is scaled by a linearly variable amount to a second force that is applied to the polishing pad by a conditioning disk. Numerous other aspects are disclosed.

Abstract: A conditioner including abrasive elements for conditioning a polishing pad to be used in abrasive semiconductor substrate treatment processes, such as chemical-mechanical polishing or chemical-mechanical planarization processes. The abrasive elements are formed from a material that may be degraded or dissolved by at least one chemical that will not substantially degrade or dissolve a material of the polishing pad. The abrasive elements of the conditioner may be degraded or dissolved in at least one chemical that will not substantially degrade or dissolve a material of the polishing pad. Any residue or particles of, or from, the abrasive elements that stick to or become embedded in the polishing pad are removed therefrom by exposing the polishing pad to the at least one chemical so as to degrade or dissolve the residue or particles without substantially degrading or dissolving a material of the polishing pad.

Abstract: A pad conditioner may include a surface having a first region including a portion having relatively irregular shaped and friable polishing particles, and a second region including a portion having relatively regular shaped and tough polishing particles. The relatively regular shaped and tough polishing particles may be provided on the edge portion of the surface and the relatively irregular shaped and friable polishing particles may be provided on the center portion of the surface.

Abstract: CMP pad dressers and their methods of manufacture are disclosed. One aspect of the present invention provides a CMP pad dresser having improved superabrasive grit retention in a resin layer. The CMP pad includes a resin layer, superabrasive grit held in the resin layer such that an exposed portion of each superabrasive grit protrudes from the resin layer, and a metal coating layer disposed between each superabrasive grit and the resin layer, where the exposed portions are substantially free of the metal coating layer. The metal coating layer acts to increase the retention of the superabrasive grit in the resin layer as compared to superabrasive grit absent the metal coating layer.

Abstract: A method and apparatus for conditioning polishing pads that utilize an apertured conditioning disk for introducing operation-specific slurries, without the need for additional tooling, platens, and materials handling. The method and apparatus utilize a vacuum capability to pull waste material out of the conditioning pad and through the apertured conditioning disk to evacuate the apparatus through an outlet port, the apparatus may also include self-contained flushing means and a piezo-electric device for vibrating the pad conditioning apparatus.

Abstract: The polishing apparatus is capable of precisely controlling polishing pressure, correctly positioning a press plate and uniformly polishing a workpiece. In the polishing apparatus, a holding head comprises: first pressing means for introducing a pressurized fluid into a first fluid chamber and pressing a main head section downward; second pressing means for introducing a pressurized fluid into a second fluid chamber and pressing a press plate downward; and third pressing means for introducing a pressurized fluid into a third fluid chamber and pressing the workpiece downward. With this structure, the workpiece is held on the lower side of an elastic sheet member, and the lower face of the workpiece can be polished by a polishing plate.

Abstract: The present invention relates to a conditioner device for polishing pad and a chemical mechanical polishing (CMP) apparatus having the same. The conditioner device of the present invention comprises a rotable support plate including a support plate surface comprising a center area located about the rotational axis of the support plate, a mid area surrounding the center area, and a peripheral area surrounding the mid area, a plurality of conditioning zones located within a portion of the mid area of the support plate surface. A plurality of hard particles which are densely arranged within the conditioning zones and are attached to the support plate surface. A plurality of passages defined by the conditioning zones within which a slurry flows, the passages occupying a portion of the mid area which is not occupied by the conditioning zones, the center area and the peripheral area.

Abstract: Monitoring the process of planarizing a workpiece, e.g., conditioning a CMP pad, can present some difficulties. Aspects of this invention provide methods and systems for monitoring and/or controlling such a planarization cycle. For example, a control system may monitor the proximity of a workpiece holder and an abrasion member by measuring the capacitance between a first sensor associated with the workpiece holder and a second sensor associated with the abrasion member. This exemplary control system may adjust a process parameter of the planarization cycle in response to a change in the measured capacitance. This can be useful in endpointing the planarization cycle, for example. In certain applications, the control system may define a pad profile based on multiple capacitance measurements and use the pad profile to achieve better planarity of the planarized surface.

Abstract: The invention concerns a blade sharpening machine that can be driven either by manual or automatic control. The blade sharpening machine possess two rotating grinding wheels and a mechanism for supporting the blade to be sharpened so that said blade can be sharpened in contact with the lateral surface of a rotating grinding wheel.

Abstract: A CMP conditioning apparatus enhanced end effector arm for improving the reliability of the apparatus and the quality of the conditioning and polishing operations includes a conditioner head with features that provide for simplified alignment/attachment of a conditioning disk to the arm, while also providing a “quick release” mechanism for maintenance operations. The enhanced arm also includes an improved actuator that provides for a static friction (“stiction”)-free movement of the arm and better control of the downforce applied by the conditioning disk to the polishing pad. A dual-drive pulley system is used within the enhanced end effector arm to minimize the tilting of the drive belts within the effector arm as the arm pivots to follow the contour of an “aging” polishing pad.

Abstract: Embodiments of a conditioning head for in-situ conditioning and/or cleaning a processing pad of a CMP, ECMP, or other processing system are provided. In one embodiment, the conditioning head includes a brush disposed in a central cavity. A cleaning fluid is provided through the central cavity of the conditioning head to a processing pad. The brush spins and moves laterally across the surface of the processing pad. The cleaning solution dispensed through the conditioning head dissolves by-products of the processing operation while the brush gently wipes the processing pad. A lip of the conditioning head retains the cleaning fluid and cleaning waste, thereby minimizing contamination of the area outside of the conditioning head. The cleaning waste is removed from the processing pad via passages formed near the outer periphery of the conditioning head.

Abstract: The present invention relates to a polishing apparatus for polishing a workpiece, such as a semiconductor wafer, to a flat mirror finish. The polishing apparatus comprises a polishing table having a polishing surface, and a top ring, and the workpiece is interposed between the polishing table and the top ring and pressed at a predetermined pressure to polish the workpiece. The polishing apparatus comprises at least two dressing units for dressing the polishing surface by being brought into contact with the polishing surface, which is a surface of a polishing cloth.

Abstract: A truing tool for truing an essentially cylindrical grinding worm that is arranged on the tool spindle of a machine suitable for the continuous generation grinding in the tangential- and diagonal process. The truing tool comprises an essentially cylindrical gear wheel (6) having an abrasive coating on the surface that is active during truing to profile the flanks of the grinding worm (3) and an essentially cylindrical roll (7) having an abrasive coating on its circumferential surface to adapt the diameter of the addendum circle of the grinding worm. The gear wheel (6) and the roll (7) can be connected axially and torsion-resistantly to the work piece spindle (1) of the machine.

Abstract: CMP pad dressers with increased pad dressing work loads on the centrally located abrasive particles during dressing of a CMP pad, and methods associated therewith are disclosed and described. The increase in work load on centralized particles improves pad dressing performance and also extends the service life of the pad dresser.