Abstract: The operation of a polishing pad conditioner for a CMP apparatus is monitored. The polishing pad conditioner includes a housing, a first drive pulley disposed in the housing and connected to a motor at a first side of the housing, a conditioning head having a diamond disk for conditioning the polishing pad and mounted to a second side of the housing, a second pulley coupled to the conditioning head for transferring the driving force from the drive pulley to the conditioning head, a timing belt engaged with the first and second pulleys, an air supply tube for supplying air under pressure to the conditoner head to force the head against a polishing pad of the CMP apparatus, and at least one sensor disposed in the housing for sensing the operation of the conditioning head.

Abstract: The invention provides a chemical mechanical polishing and pad dressing method based on differing the rotational of a pad dresser, head, and/or polishing pad to improve center removal slow profiling.

Abstract: A polishing pad conditioner for a chemical-mechanical polishing apparatus includes a conditioning plate having a first recess and a holder having a second recess. The first recess is formed on the upper face of the conditioning plate, and the second recess is formed on the bottom face of the holder. A first filling member having a specific gravity smaller than that of the conditioning plate fills up the first recess, and a second filling member having a specific gravity smaller than that of the holder fills up the second recess. Therefore, the weight of the polishing pad conditioner can be reduced, and the durability and service life of an air bladder that adjusts the height of the polishing pad conditioner can be improved.

Abstract: The polishing particle surface of the dresser of a chemical mechanical polishing apparatus used for a planarization process in manufacturing semiconductor devices is inclined. Moreover, the pressure to be applied onto the polishing surface of the dresser is linearly varied with a nonzero slope.

Abstract: A method and apparatus for qualifying a polishing pad used in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes at least one qualifying member including at least one collimated hole structure, wherein the collimated hole structure forms multiple channels within the qualifying member. The method includes providing at least one qualifying member formed with at least one capillary tube array, wherein the capillary tube array forms multiple channels within the qualifying member, pressing the qualifying member against the polishing pad, and moving the qualifying member along the polishing pad along a trajectory to simulate the polishing of a semiconductor wafer.

Abstract: The invention relates to disks for conditioning pads used in the chemical mechanical polishing of semiconductor wafers, and a method of fabricating the pads. In one embodiment, the conditioning pad includes multiple, pyramid-shaped, truncated protrusions which are cut or shaped in the surface of a typically stainless steel substrate. Each of the truncated protrusions includes a plateau in the top thereof. A seed layer, typically titanium nitride (TiN), is provided on the surface of the protrusions, and a contact layer such as diamond-like carbon (DLC) or other suitable film is provided over the seed layer. In another embodiment, each of the protrusions is pyramid-shaped and includes a pointed apex at the top thereof.

Abstract: A wafer processing module is provided. In one example, the wafer processing module includes a sub-aperture CMP processing system and a pad exchange system including a pad magazine for storing CMP processing pads and a pad exchange robot for transferring CMP processing pads between the sub-aperture CMP processing system and the pad magazine. The wafer processing module includes a module frame that integrates the sub-aperture CMP processing system including the pad exchange system, with a wafer scrubber unit and a wafer SRD unit.

Abstract: A abstract polishing apparatus has a substrate carrier a substrate and an abrasive member having a polishing surface. The surface is slidingly engaged with the substrate in order to effect polishing. The dressing device includes a light source when generating light rays for irradiating the polishing surface of the abrasive member, whereby dressing the polishing surface. A temperature control system control the temperature of the polishing surface of the abrasive member by sensing the temperature of the polishing surface with the temperature sensor. Mechanical dressing of the polishing surface, in addition to dressing by radiation of the polishing surface, may also be employed in order to flatten the entire polishing surface. The abrasive member preferably includes an abrasive particles, a binder and a photophilic for promoting the dressing of the polishing surface by light rays.

Abstract: Apparatuses and methods for planarizing a microelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone.

Abstract: A method includes supplying a signal to rotationally drive a conditioning wheel of a conditioning tool. A polishing pad of a polishing tool is conditioned using the rotationally driven conditioning wheel. Changes in the signal driving the conditioning wheel during the conditioning process are monitored. A conditioning effectiveness of the conditioning wheel is determined based on the changes observed in the monitored signal. A system includes a conditioning tool and a controller. The conditioning tool is adapted to condition a polishing pad of a polishing tool. The controller is coupled to at least one of the polishing tool or the conditioning tool. The controller is adapted to supply a signal to rotationally drive a conditioning wheel of the conditioning tool, monitor changes in the signal driving the conditioning wheel during a conditioning process, and determine a conditioning effectiveness of the conditioning wheel based on changes observed in the monitored signal.

Abstract: Apparatus of carrier in a chemical mechanical polishing equipment comprises a carrier module for holding a wafer face down. A retaining ring and conditioning module is coupled to the carrier module, which is used for protecting the wafer edge against contact with a polishing pad in a deformed shape and executing a conditioning of the polishing pad. A first support module is coupled to the retaining ring and conditioning module, which is used for rotating, pressing down, and supplying conditioning chemicals for the retaining ring and conditioning module.

Abstract: Generally, a method and apparatus for cleaning a backside of a web of polishing material. In one embodiment, the apparatus includes a platen having a support surface adapted to support the backside the web and a web cleaner disposed on the platen and adjacent the backside of the web. A method for cleaning a web of polishing material is also provided. In one embodiment, the method includes the steps of supporting a portion of the web of polishing media on a platen, advancing a portion of the web onto the platen, and cleaning the unrolled portion of the web.

Abstract: Apparatuses and methods for planarizing a microelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone.

Abstract: Apparatuses and methods for planarizing a microelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone.

Abstract: The present invention aims at make automatic real-time measurement of the removal rate in during polishing. For achieving the aim, a polishing system is provided with a sensor 1 for measuring a friction generated between a polishing pad and a workpiece during the polishing. The information processor of the polishing system evaluates the polishing efficiency of the polishing pad 5 on the basis of a fluctuation in the removal rate which is successively obtained from a friction successively detected by the sensor and a predetermined function. The result of the evaluation is used for the determination of the execution timing of a dressing process for the polishing pad, the calculation of the removal from the workpiece, and the like.

Abstract: Apparatuses and methods for planarizing a microelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone.

Abstract: A polishing pad conditioning apparatus in a chemical mechanical polishing apparatus, wherein the conditioning apparatus includes a conditioning plate which maintains a predetermined relative velocity with respect to the polishing pad, extends from a center region near a rotation center of the polishing pad to a peripheral region near an edge of the polishing pad, and has a polishing portion with polishing particles embedded into its bottom surface, a force generating portion for applying a force to the conditioning plate so that the conditioning plate presses against the polishing pad with pressure that varies according to position on the polishing pad, and conditions the polishing pad by relative linear velocity and pressure with respect to the polishing pad, and a supporting portion for supporting the force generating portion. Therefore, fast and uniform conditioning of a polishing pad can be achieved.

Abstract: A method and apparatus for conditioning a polishing pad are described. The method includes steps of providing a chemical mechanical polishing apparatus having a polishing region and a conditioning region; cycling a polishing member through the apparatus; contacting the polishing member in the conditioning region with a conditioning member; and conditioning the polishing member. The apparatus includes an end effector adapted to receive a conditioning member, the end effector being attached to an arm that can be moved horizontally and vertically, and a strain gauge that monitors the force applied to a polishing member.

Abstract: A retainer for retaining an abrasive pad on a lens making machine and an abrasive pad adapted to such retention comprises a retainer nestable with a lap of a lens making machine wherein when such retainer is nested, a pad placed upon said lap before nesting will be trapped in the desired position. The pad of the invention includes radially outwardly extending members beyond the working area of the pad whose purpose is to be trapped by the retainer. The invention enables automatic loading and unloading of pads on the lens making machine.

Abstract: A statistically uniform micro-texture on a polishing pad surface improves break-in preconditioning time, and is measured by: Land Surface Roughness, Ra, from about 0.01 &mgr;m to about 25 &mgr;m; Average Peak to Valley Roughness, Rtm, from about 2 &mgr;m to about 40 &mgr;m; Core roughness depth, Rk, from about 1 to about 10; Reduced Peak Height, Rpk, from about 0.1 to about 5; Reduced Valley Height, Rvk, from about 0.1 to about 10; and Peak density expressed as a surface area ratio, RSA, ([Surf.Area/(Area−1)]), 0.001 to 2.0.

Abstract: Apparatuses and methods for planarizing a mnicroelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone.

Abstract: A method for cleaning a polishing tool capable of reliably removing deposited solidified abrasive and impurities and thereby capable of suppressing scratching of a polished object and reducing residual particles on the polished face of the polished object, comprising the steps of arranging with respect to the polishing tool a cleaning member provided with facing surfaces for forming clearances with cleaned surfaces of the polishing tool feeding a cleaning solution to clearances formed between the facing surfaces and the cleaned surfaces to form cleaning solution films, and cleaning the cleaned surfaces by rotating the polishing tool, the cleaning solution being fed to clearances between the cleaned surfaces and the facing surfaces through feed ports formed in the cleaning member and opened in the facing surfaces, and a polishing method and polishing apparatus using the same.

Abstract: A conditioning apparatus and method for conditioning a polish pad. The conditioning apparatus has a movable conditioning arm with a disk mounting apparatus, a plurality of interchangeable conditioning disks, a disk housing or multiple disk stations capable of holding the plurality of interchangeable conditioning disks and a controller for directing and controlling the movement of said conditioning arm.

Abstract: A method is provided for polishing a device wafer, which has projections and depressions formed on a surface thereof, with the use of an abrading plate. The method comprises polishing the device wafer while supplying a surface active agent and/or while dressing a surface of the abrading plate. This method for polishing the device wafer can always exhibit a self-stop function, without being restricted by the composition of the abrading plate, and without being restricted by the type of the substrate.

Abstract: A polishing material for chemical mechanical polishing has a mesh of fibers and a binder material holding the fibers in the mesh. The binder material coalesced among the fibers to leave pores in the interstices between the fibers of the mesh. The fibers and binder material provide the polishing material with a brittle texture. The fibers can be cellulose, and the binder material can be a phenolic resin.

Abstract: A dresser 44 of a wafer polishing apparatus according to this invention includes a grinding wheel head 444 that is idly supported in such a manner as to be capable of moving up and down relative to a dresser main body 441, and an air bag 449 interposed between the dresser main body and the grinding wheel head. The air pressure inside the air bag can be regulated so that the force pushing the grinding wheel head to the polishing cloth can be regulated. A washing tank 46 for washing the grinding wheel head of the dresser is disposed adjacent to the platen 41, and a brush table 463 having a brush 462 implanted thereto is detachably provided to the bottom part of the washing tank 46.

Abstract: An apparatus for performing semiconductor planarizing operations is disclosed. In an exemplary embodiment, the apparatus includes a carrier assembly for maintaining a workpiece therein in a face up orientation. A roller assembly includes a first cylindrical roller and a cylindrical second roller, the first and second rollers being linked to one another through a pair of arms. Each of the first and second rollers may be independently positioned with respect to a horizontal plane, the horizontal plane being substantially parallel to a top surface of the workpiece.

Abstract: Methods and apparatus are provided for combining the manufacturing of a fixed-abrasive substrate and the chemical mechanical planarization of semiconductor wafers using a single process path.

Abstract: A polishing apparatus for polishing a substrate comprises a turntable having a polishing surface, a substrate holder for holding a substrate and bringing the substrate into contact under pressure with the polishing surface, a dresser including a dresser tool adapted to be brought into contact under a pressure with the polishing surface to dress or condition the polishing surface and a pressure device connected to the dresser for moving the dresser between a raised position where the dresser is spaced away from the polishing surface and a dressing position where the dresser rests on the polishing surface such that the dresser tool is in contact with the polishing surface under a pressure exerted by the weight of the dresser itself, the dresser comprising a follow-up mechanism allowing each one of dressing element to move up and down relative to a flange portion so as to follow a contour of the polishing surface of the turntable.

Abstract: A method for fabricating a semiconductor device includes grindstone surface activation treatment by means of a brush or ultrasonic wave carried out when a concave/convex pattern of a semiconductor wafer is planarized by polishing a semiconductor wafer held by a wafer holder by using a grindstone constituted of abrasive grains and material for holding the abrasive grains onto which the semiconductor wafer is pressed with relative motion. The semiconductor wafer is processed with high removal rate and the polishing thickness is controlled accurately.

Abstract: Apparatuses and methods for planarizing a microelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone.

Abstract: A dressing apparatus is used for dressing a polishing surface of a polishing table used for polishing a workpiece such as a semiconductor wafer. The dressing apparatus for dressing apparatus comprises a dresser having a dressing surface for dressing the polishing surface, and the dressing surface has an area which covers an entire area of the polishing surface.

Abstract: A dresser unit including a dresser 20 and a driving shaft 21 for rotationally driving the dresser 20 is operatively mounted to a dresser supporting mechanism so that the dresser unit can be moved up and down freely with respect to the dresser supporting mechanism, wherein a piston-cylinder mechanism 40 is installed between the dresser unit and the dresser supporting mechanism for pushing up the dresser unit by an upward force of fluid pressure, and a fluid at a predetermined pressure level is supplied to the piston-cylinder mechanism 40 from a compressed air source 67 via a pressure control unit 65, the compression force applied to a turntable 10 by the dresser is precisely controlled and adjusted based on a balance between the own weight of the dresser unit and the upward force exerted by the piston-cylinder mechanism 40.

Abstract: A dressing apparatus dresses a polishing surface of a polishing table used for polishing a workpiece such as a semiconductor wafer in a polishing apparatus. The dressing apparatus comprises a dresser having an elongate dressing surface for dressing the polishing surface, and the dressing surface has a flat surface which contacts the polishing surface. The dressing surface also has one of a tapered surface extending from the flat surface and inclined so as to be directed away from the polishing surface and a curved surface extending from the flat surface and curved so as to be directed away from the polishing surface.

Abstract: Specific embodiments of the present invention provide a chemical-mechanical planarization apparatus for planarizing an object comprising a platen assembly for holding an object having a target surface to be planarized. A polishing pad is configured to contact the object during planarization with a contact portion over a contact area which is smaller in area than the target surface. The polishing pad has a noncontact portion which is not in contact with the object during planarization. The polishing pad is movable relative to the object to move the noncontact portion in contact with the object and move the contact portion out of contact with the object. A conditioner is configured to condition the noncontact portion of the polishing pad. The noncontact portion of the polishing pad may be conditioned continuously during planarization of the object by the polishing pad. An abrasive may be delivered to the contact area between the polishing pad and the target surface of the object.

Abstract: A method and apparatus for releasably attaching a planarizing medium, such as a polishing pad, to the platen of a chemical-mechanical planarization machine. In one embodiment, the apparatus can include several apertures in the upper surface of the platen that are coupled to a vacuum source. When a vacuum is drawn through the apertures in the platen, the polishing pad is drawn tightly against the platen and may therefore be less likely to wrinkle when a semiconductor substrate is engaged with the polishing pad during planarization. When the vacuum is released, the polishing pad can be easily separated from the platen. The apparatus can further include a liquid trap to separate liquid from the fluid drawn by the vacuum source through the apertures, and can also include a releasable stop to prevent the polishing pad from separating from the platen should the vacuum source be deactivated while the platen is in motion.

Abstract: Disclosed is a dressing apparatus wherein a polishing surface can be regenerated stably over a long period without any danger of an object to be polished being scratched. A dressing surface 50a of a dresser 48 is caused to slide on a polishing surface 30a of a polishing table 22 while the dressing surface is urged against the polishing surface. The dressing surface is formed from a grindstone 50.

Abstract: A method includes providing at least one wafer having a process layer formed thereon. A surface of the process layer is polished using a first polishing process that is comprised of a slurry and a first polishing pad. The slurry is removed from the surface of the process layer. The surface of the process layer is planarized using a substantially slurryless second polishing process that is comprised of a second polishing pad that is more abrasive than the first polishing pad. A system includes a polishing tool and a process controller. The polishing tool is adapted to receive at least one wafer having a process layer formed thereon. The polishing tool is a adapted to polish a surface of the process layer using a first polishing process that is comprised of a slurry and a first polishing pad and remove the slurry from the surface of the process layer.

Abstract: A polishing surface is conditioned by pressing a diamond dresser against the polishing surface to thinly shave a surface of the polishing surface. Foreign matter clogging concavities formed in the polishing surface is scraped by pressing a brush dresser against the polishing surface in a state such that a polishing liquid is not supplied to the polishing table. A liquid composed of a mixture of a liquid or inert gas with pure water or a chemical liquid is ejected onto the polishing surface to clean the polishing surface.

Abstract: A conditioner for polishing pad and a method for manufacturing the same are disclosed. The conditioner includes a substrate having formed with a plurality of geometrical protrusions of an uniformed height on at least one of its sides, and a cutting portion having a diamond layer of an uniformed thickness formed substantially on a whole surface of the side of the substrate having the geometrical protrusions. The geometrical protrusions have a flat upper surface or the upper surface may comprise a plurality of smaller geometrical protrusions formed by recessed grooves. The substrate is made from ceramic or cemented carbide materials and has a shape of a disk, a plate having multiple corner, a cup, a segment, or a doughnut with flattened upper and lower surfaces. The conditioner may further include a body portion being fixedly attached to the substrate at a side opposite to the side having formed with geometrical protrusions for linking the cutting portion to conditioning equipment.

Abstract: A method for smoothing a surface of a polishing pad previously used in planarizing a surface of a substrate in a chemical mechanical planarization (CMP) system is provided. The method starts by conditioning the surface of the polishing pad so as to create a post-conditioned surface having a plurality of asperities. The post-conditioned surface of the polishing pad is then ironed, thus compressing the plurality of asperities onto the post-conditioned surface of the polishing pad such that the plurality of asperities lay substantially flat against the post-conditioned surface of the polishing pad.

Abstract: A polishing apparatus is used for polishing a surface of a workpiece such as a semiconductor wafer or a glass substrate. The polishing apparatus comprises a polishing table having a polishing surface thereon, a plurality of workpiece holders each for holding a workpiece and pressing the workpiece against the polishing surface, and a controller for controlling the workpiece holders individually so that polishing operations of the workpiece holders are controlled independently of each other.

Abstract: A chemical mechanical polishing apparatus comprises a platen having a polishing pad thereon, a wafer carrier holding a wafer on the polishing pad, a washer having a cleaning device; and a dresser. The dresser comprises a bottom disk contacting the polishing pad. The dresser can move between the polishing pad and the washer. When the dresser moves into the washer, a diamond zone on the bottom disk cleans the polishing pad, and the cleaning device cleans the diamond zone.

Abstract: A polishing method is provided which simultaneously supplies both a polishing fluid and a conditioning fluid to a polishing pad, while a substrate is in moving contact with the polishing pad.

Abstract: A pad conditioning assembly includes a conditioner head with an end effector movable into contact with a polishing pad,a plurality of downwardly-projecting movable conditioning elements disposed at a bottom of the end effector; and a compliant backing member disposed above and adjacent the conditioning elements, wherein forces applied by the compliant backing member are transferred to the movable conditioning elements to move the conditioning elements. In one aspect, a pressurization circuit applies a pressure from a pressure source to the compliant backing member to flex the compliant backing member against the movable conditioning elements.

Abstract: An apparatus for conditioning the polishing pads of a chemical-mechanical polishing system includes a tool having a cutting tip and positioned almost perpendicular to the surface of the polishing pad arranged on a rotary surface table of the system. The apparatus also has a horizontal moving unit for moving the tool in a direction almost parallel to the surface of the polishing pad, a base unit positioned at a side of the rotary surface table and supporting the horizontal moving unit, and a vertical moving unit for adjusting a vertical position of the tool relative to the surface of the polishing pad. The conditioning apparatus precisely determines a target depth of cut in a polishing pad by moving the tool in a vertical direction, thus allowing the tool to precisely flatten the surface of the polishing pad during a conditioning process.

Abstract: Apparatuses and methods for planarizing a microelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone.

Abstract: A method and apparatus for conditioning a polishing pad is described, wherein the polishing pad has a polishing surface for polishing the semiconductor wafer, and a back surface opposed to the polishing surface. The method includes positioning a sonic energy generator adjacent to the back surface of the polishing pad, and generating sonic energy through the back surface of the polishing pad. The apparatus includes a sonic energy generator adapted to be positioned adjacent the back surface, the sonic energy generator including a transducer connected to a contact member, wherein the sonic energy generator is adapted to transmit sonic energy in a direction through the back surface and to the polishing surface of the polishing belt.

Abstract: An end effector is provided for conditioning a polishing pad. The end effector comprises a backing plate, a matrix material adhered to a first surface of the backing plate, and a plurality of crystals embedded in the matrix material an amount sufficient to prevent the plurality of crystals from becoming dislodged from the matrix material during pad conditioning. The plurality of crystals have an absolute crystal height distribution that is skewed toward zero. Methods are also provided for forming the above-described end effector.

Abstract: An apparatus for multiple component slurry distribution during semiconductor wafer polishing operations. Concurrent polishing pad conditioning is obtained by means of a novel polishing pad design where polishing pads are mounted in a cylindrical configuration as opposed to the conventional flat surface configuration. A polishing pad conditioner is provided to refurbish the polishing pad.