Abstract: Conditioning devices, systems and methods for conditioning a contact surface of a processing pad used in processing microelectronic workpieces. One embodiment of a conditioning device comprises an end-effector having a conditioning surface configured to engage the contact surface of the processing pad and a plurality of microstructures on the conditioning surface. The microstructures can be arranged in a pattern corresponding to a desired pattern of microfeatures on the contact surface of the processing pad. In several embodiments, the microstructures are raised elements projecting from the conditioning surface and/or depressions in the conditioning surface. The condition surface can also be smooth. The conditioning device can also include a heater coupled to the end-effector for heating the processing pad.

Abstract: A CMP pad conditioner including: (a) a disk-shaped substrate having a working surface which is provided by one of its axially opposite end surfaces and which is to be brought into contact with the CMP pad; and (b) abrasive grains which are fixed to the working surface. The substrate includes a radially inner portion and a radially outer portion which is located radially outwardly of the radially inner portion. The working surface in the radially outer portion is inclined with respect to the working surface in the radially inner portion, such that a thickness of the radially outer portion as measured in an axial direction of the substrate is reduced as viewed in a direction away from an axis of the substrate toward a periphery of the substrate. A ratio of an outside diameter of the radially inner portion to an outside diameter of the substrate is 60–85%.

Abstract: A grinder designed to provide an automatic grinding operation for the manufacture of a semiconductor device wafer. The grinder includes a base, a rotatable index table mounted to the base, and a grinding wheel assembly including a grinding wheel for grinding a flat surface on the wafer. The index table includes a wafer holder for receiving and holding the wafer and a dressing element for dressing the grinding wheel. The index table is selectively rotatable between a grinding position where the wafer is ground by the grinding wheel and a dressing position where the grinding wheel is dressed by the dressing element.

Abstract: Monitoring the process of planarizing a workpiece, e.g., conditioning a CMP pad, can present some difficulties. Aspects of this invention provide methods and systems for monitoring and/or controlling such a planarization cycle. For example, a control system may monitor the proximity of a workpiece holder and an abrasion member by measuring the capacitance between a first sensor associated with the workpiece holder and a second sensor associated with the abrasion member. This exemplary control system may adjust a process parameter of the planarization cycle in response to a change in the measured capacitance. This can be useful in endpointing the planarization cycle, for example. In certain applications, the control system may define a pad profile based on multiple capacitance measurements and use the pad profile to achieve better planarity of the planarized surface.

Abstract: According to an example embodiment, the present invention is directed to a CMP apparatus having a polishing table, a wafer carrier adapted to carry a wafer on a pad, and a conditioning wheel. If the pad is being polished in a center-fast or center-slow manner, the conditioning wheel is used to condition the pad and to improve the center-fast or center-slow condition. Benefits of using this embodiment include improved wafer quality, improved pad life, a reduction in defective wafers, and faster production.

Abstract: A chemical mechanical polishing equipment has a polishing pad, a holder, a slurry supply and a conditioner. The holder is disposed above the polishing pad and carries a wafer for polishing the surface of wafer. The slurry supply is disposed above the polishing pad for supplying slurry onto the polishing surface. The conditioner is disposed near the polishing pad for removing the residual particles over the polishing pad. By disposing a plurality of block on the conditioner, the conditioner can provide with flexibility so that the conditioner can sufficiently contact with the polishing surface for increasing the removal rate of residual particles.

Abstract: A conditioning apparatus for use in a CMP system is provided along with an associated method of operation. The conditioning apparatus includes rotation mechanics and oscillation mechanics. The rotation mechanics are capable of rotating a shaft which causes a holder and a conditioning substrate to be rotated. The oscillation mechanics are capable of moving a position of the shaft within a region defined by a peripheral boundary that is less than and within an outer periphery of the conditioning substrate. A conditioning substrate backing is also included in the conditioning apparatus. The conditioning substrate backing defines a differential pressure distribution that is capable of being applied to the conditioning substrate.

Abstract: The invention provides a chemical mechanical polishing and pad dressing method based on differing the rotational of a pad dresser, head, and/or polishing pad to improve center removal slow profiling.

Abstract: Conditioning devices, systems and methods for conditioning a contact surface of a processing pad used in processing microelectronic workpieces. One embodiment of a conditioning device comprises an end-effector having a conditioning surface configured to engage the contact surface of the processing pad and a plurality of microstructures on the conditioning surface. The microstructures can be arranged in a pattern corresponding to a desired pattern of microfeatures on the contact surface of the processing pad. In several embodiments, the microstructures are raised elements projecting from the conditioning surface and/or depressions in the conditioning surface. The condition surface can also be smooth. The conditioning device can also include a heater coupled to the end-effector for heating the processing pad.

Abstract: The invention includes a method for conditioning a surface of a polishing pad after chemical-mechanical polishing of a semiconductor substrate with the pad surface. The method includes exposing the pad surface to steam, and the steam can comprise ammonium citrate. The invention also includes an apparatus for conditioning a surface of a polishing pad after chemical-mechanical polishing of a semiconductor substrate with the pad surface. The apparatus includes a conditioning stone, and a steam outlet port proximate the conditioning stone. The steam outlet port is configured to jet steam onto the pad surface during the conditioning of the pad surface.

Abstract: A method and a system are provided for cleaning a CMP pad. The method starts by applying chemicals onto the surface of the CMP pad. The chemicals are then allowed to react with a residue that may be on the pad to produce by-products. Next, the pad surface is rinsed to substantially remove the by-products. A mechanical conditioning operation is then performed on the surface of the pad. In one example, the wafer surface can be a metal, such as copper. Where the wafer surface is copper, the chemical is most preferably HCl, and a solution includes HCl and DI water. Where the wafer surface is oxide, the chemical is most preferably NH4OH, and the solution includes NH4OH and DI water. Generally, the CMP pad can be in the form of a linear belt, in the form of an round disk, or in any other mechanical or physical configuration.

Abstract: An apparatus for conditioning a polishing pad of a CMP apparatus for making semiconductor wafers is provided which includes a control arm configured to extend at least partially over a polishing pad. The apparatus also includes at least one cylindrical conditioning piece coupled to the control arm where the control arm is configured to apply the at least one cylindrical conditioning piece to the polishing pad.

Abstract: A polishing apparatus for polishing a substrate comprises a turntable having a polishing surface, a substrate holder for holding a substrate and bringing the substrate into contact under pressure with the polishing surface, a dresser including a dresser tool adapted to be brought into contact under a pressure with the polishing surface to dress or condition the polishing surface and a pressure device connected to the dresser for moving the dresser between a raised position where the dresser is spaced away from the polishing surface and a dressing position where the dresser rests on the polishing surface such that the dresser tool is in contact with the polishing surface under a pressure exerted by the weight of the dresser itself, the dresser comprising a follow-up mechanism allowing each one of dressing element to move up and down relative to a flange portion so as to follow a contour of the polishing surface of the turntable.

Abstract: Planarizing machines for accurately planarizing microelectronic workpieces. Several embodiments of the planarizing machines produce a planar surface at a desired endpoint in the microelectronic workpieces by (a) quickly reducing variances on the surface of the workpiece using a planarizing medium that removes topographical features but has a low polishing rate on planar surfaces; and (b) subsequently planarizing the wafer on a planarizing medium that has a higher polishing rate on planar surfaces than the first polishing medium.

Abstract: A pad conditioning system for conditioning a polishing pad in conjunction with polishing of a workpiece includes a pad conditioning head coupled with a positioning unit. The pad conditioning head includes a conditioning surface that is configured to be moved into contact with a polishing pad to condition the polishing pad. The pad conditioning system also includes a polishing liquid supply port disposed in the conditioning surface. The polishing liquid supply port is configured to selectively discharge polishing liquid during the conditioning operation. The discharged polishing liquid is worked into the polishing pad by the pad conditioning head during the conditioning operation. A workpiece, such as a semiconductor wafer, that is also moved into contact with the polishing pad is polished using the discharged polishing liquid.

Abstract: Apparatuses and methods for planarizing a microelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone.

Abstract: A pad conditioner of wafer planarization equipment includes a linear driving device for moving a disk holder up and down using a magnetic force. The linear driving device has an electromagnet, a permanent magnet, and a controller. The controller controls the power supplied to the electromagnet such that the electromagnet and permanent magnet produce a force of attraction and/or repulsion used to move the disk holder relative to a polishing pad of the wafer planarization equipment.

Abstract: A pad conditioning system for conditioning a polishing pad in conjunction with a workpiece polishing operation includes a pad conditioning head coupled with a positioning unit. The pad conditioning head includes a plurality of abrasive particles protruding from a surface of the pad conditioning head. The positioning unit is configured to move the surface into contact with a polishing pad. The pad conditioning system also includes a liquid supply nozzle. The liquid supply nozzle is configured to selectively discharge liquid proximate to the abrasive particles that are in contact with the polishing pad to minimize frictional wear of the abrasive particles.

Abstract: Methods and apparatus are provided for conditioning of polishing surfaces utilized during CMP processing. The method comprises contacting the polishing surface and a conditioning surface with a first force, one of the surfaces coupled to a support member that has an axis. The polishing surface and/or the conditioning surface is moved at a constant velocity. Torque exerted by the support member about the axis to effect a relative position between the conditioning surface and the polishing surface is measured and used to obtain a process variable. The process variable is compared to a setpoint value for the relative position of the conditioning surface and the polishing surface. A second force is calculated and the polishing surface and the conditioning surface then are contacted with the second force, if the process variable differs from the setpoint value by more than an allowed tolerance.

Abstract: A polishing surface is conditioned by pressing a diamond dresser against the polishing surface to thinly shave a surface of the polishing surface. Foreign matter clogging concavities formed in the polishing surface is scraped by pressing a brush dresser against the polishing surface in a state such that a polishing liquid is not supplied to the polishing table. A liquid composed of a mixture of a liquid or inert gas with pure water or a chemical liquid is ejected onto the polishing surface to clean the polishing surface.

Abstract: A pad conditioner having an abrasive disk and an undulating disk and methods for using the same. The undulating disk has at least one raised portion and at least one recessed portion. The abrasive disk is releasably affixed to at least a portion of the recessed portion to form an undulated abrasive surface. The undulating disk allows the pad conditioner to be modified for use with multiple processes and for a variety of workpieces.

Abstract: A method and apparatus for cleaning a web-based chemical-mechanical planarization (CMP) system. Specifically, a fluid spray bar is coupled to a frame assembly which may be mounted on a CMP system. The fluid spray bar will move along the frame assembly. As the fluid spray bar traverses the length of the frame assembly, a cleaning fluid is sprayed onto the web in order to clean the web between planarization cycles.

Abstract: A chemical mechanical planarization (CMP) conditioning apparatus is provided. The CMP conditioning apparatus is designed to connect to a positioning arm which is capable of applying the conditioning apparatus to a processing surface. Embodiments of the CMP conditioning apparatus include a housing configured to connect to the positioning arm, and one side of the housing having a concave gimbal surface. A puck holder that a convex gimbal surface configured to mate with the concave gimbal surface of the housing is further provided. Thee puck holder receives a conditioning puck that has an attach surface and an active surface. The concave gimbal surface and the convex gimbal surface define a projected gimbal point at about a plane defined at about the active surface of the conditioning puck.

Abstract: Embodiments of the present invention are directed to polishing an object with polishing pad conditioning. In one embodiment, a method for polishing an object comprises placing a contact portion of a polishing pad in contact with a target surface of the object to be planarized over a contact area which is smaller in area than the target surface; conditioning a noncontact portion of the polishing pad which is not in contact with the target surface of the object; and moving the polishing pad relative to the target surface of the object to move the noncontact portion in contact with the target surface of the object and move the contact portion out of contact with the target surface of the object.

Abstract: A recycled polishing pad conditioner comprises a base plate and a reversed abrasive disc that is flipped over from its original configuration. The reversed disc comprises an exposed abrasive face having an unused abrasive face comprising abrasive particles. A bond face of the disc is affixed to the base plate, the bond face comprising a used abrasive face that was previously used to condition polishing pads. Also described is a pad conditioner having an abrasive face comprising exposed portions of abrasive particles, with at least about 60% of the abrasive particles having a crystalline structure with substantially the same crystal symmetry.

Abstract: An abrading plate has a self-stopping capability such that when an object, such as a semiconductor wafer having a device structure that includes raised regions and depressed regions fabricated on the surface, is being polished, the raised regions are removed and polishing stops automatically. The abrading plate, to produce a flat and mirror polished surface on the an object, has abrasive particles having a chemical purity of not less than 90% and a particle size of not more than two micrometers, a binder material, and a given volume of porosity. A ratio of the abrasive particles and the binder material is not less than 1:0.5 by volume, and proportions of abrasive particles, a binder material and porosity are, respectively, not less than 10%, not more than 60% and 10-40% by volume. A surface is polished for a given duration with a liquid not containing abrasive particles so as to eliminate the raised regions and to obtain a flat surface.

Abstract: The present invention relates to a polishing apparatus for polishing a workpiece, such as a semiconductor wafer, to a flat mirror finish. The polishing apparatus comprises a polishing table having a polishing surface, and a top ring, and the workpiece is interposed between the polishing table and the top ring, and pressed at a predetermined pressure to polish the workpiece. The polishing apparatus comprises at least two dressing units for dressing the polishing surface by being brought into contact with the ppolishing surface, which is a surface of a polishing cloth.

Abstract: A multiple-conditioning member device for chemical mechanical planarization conditioning is described. The multiple conditioning members may be used in a chemical mechanical planarization apparatus which further includes a movably mounted polishing member, a wafer holder, and a slurry dispenser. The multiple conditioning members may be independently movable with respect to one another and configured to contact the polishing member. Specifically, a conditioning member may be independently movable with respect to another conditioning member based on x-axis control, y-axis control, z-axis control, alignment, speed of rotation, direction of rotation, amount of pressure of conditioning member on polishing member.

Abstract: A reciprocal blade lapping machine (20) is taught that is used for sharpening cutting and shearing blades. The lapping machine consists a convex lap plate (32) mounted on an enclosure (22) rotated by an electric motor (34) connected to a speed reducer (36). A lapping compound distribution system is positioned directly above the lap plate and disperses lapping compound (64) onto the convex upper surface (48) of the lap plate providing an abrasive media for removing parent material from a set of blades placed on the lap plate. A conditioning ring (66), including dead weigh within, is rotatably disposed on the lap plate impacting directly upon the rotating lap plate maintaining the convex contour. A pair of reciprocating work piece holders (74) slideably rest on the lap plate, and alternately slide work pieces (76) backward and forward in a straight line on the rotating lap plate upper surface.

Abstract: A system and method for chemical mechanical polishing of a substrate is disclosed in which a polishing pad is conditioned by directing a fluid jet to the surface of the polishing pad. Thus, the use of expensive consumables, like conditioning pads comprising diamonds, can be avoided. Furthermore, the risk of substrates being scratched by diamonds lost from the conditioning pad is avoided.

Abstract: The invention features a self-contained, portable apparatus for performing precision grinding operations on metal disks of up to, e.g., 54 inches in diameter. The apparatus can be attached to the surface of the disk to be refinished and is leveled using special precision leveling adjusters. During operation, the adjusters are turned in precision increments to set the depth of cut. The grinder is then rotated on an arm about the center of the disk, by the use of a hydraulically driven speed reducer, rotor, bearing assembly. In a further aspect, the invention includes a dressing assembly for performing dressing-truing on a vitreous wheel when the wheel is in grinding position. The in position dressing assembly dresses a grinding wheel at up to 0.00125-inch increments.

Abstract: A hand-held cleaning tool for foam buffing pads includes a paddled cleaning wheel mounted for rotation on a shaft attached to the end of a pistol grip handle. The paddle cleaning wheel grips the foam buffing pad. The cleaning tool is operated by holding the same in operative contact with the rotatably driven pad.

Abstract: Provided are materials and methods for the chemical mechanical planarization of material layers such as oxide or metal formed on semiconductor substrates during the manufacture of semiconductor devices using a fixed abrasive planarization pad having an open cell foam structure from which free abrasive particles are produced by conditioning and combined with a carrier liquid to form an in situ slurry on the polishing surface of the planarization pad that, in combination with relative motion between the semiconductor substrate and the planarization pad, tends to remove the material layer from the surface of the semiconductor substrate. Depending on the composition of the material layer, the rate of material removal from the semiconductor substrate may be controlled by manipulating the pH or the oxidizer content of the carrier liquid.

Abstract: A polishing cloth mounted on a turntable is dressed by bringing a dresser in contact with the polishing cloth for restoring the polishing capability of the polishing cloth. The dressing is performed by measuring heights of a surface of the polishing cloth at radial positions of the polishing cloth in a radial direction thereof determining a rotational speed of the dresser with respect to a rotational speed of the turntable on the basis of the measured heights, and dressing the polishing cloth by pressing the dresser are rotating. The dresser has an annular diamond grain layer or an annular SiC layer.

Abstract: The invention includes a method for conditioning a surface of a polishing pad after chemical-mechanical polishing of a semiconductor substrate with the pad surface. The method includes exposing the pad surface to steam, and the steam can comprise ammonium citrate. The invention also includes an apparatus for conditioning a surface of a polishing pad after chemical-mechanical polishing of a semiconductor substrate with the pad surface. The apparatus includes a conditioning stone, and a steam outlet port proximate the conditioning stone. The steam outlet port is configured to jet steam onto the pad surface during the conditioning of the pad surface.

Abstract: In a polishing apparatus, a polishing tool including abrasive particles and a binder for bonding together the abrasive particles is pressed against a substrate to polish the substrate. The polishing apparatus has a light source for irradiating a polishing surface with light rays for weakening a bond force of the binder for bonding together the abrasive particles, and a waste matter removing mechanism for forcefully removing waste matter produced by polishing or waste matter produced by irradiation. By irradiating the polishing surface with the light rays, dressing of the polishing surface is performed, and products resulting from dressing and the like are removed. The polishing apparatus supplies abrasive particles to the polishing surface stably by dressing and allows high-speed polishing of the substrate.

Abstract: Chemical mechanical polishing (CMP) equipment for use in planarizing a semiconductor wafer prevents slurry from being deposited on the surfaces of respective components of the equipment. The CMP equipment includes a turntable, a polishing pad mounted to the table so as to rotate with the table, a slurry supply unit for dispensing slurry onto the polishing pad, a polishing head unit for pressing a wafer downward atop the polishing pad, a conditioning unit for scoring the pad to maintain the surface of the polishing pad uniform, and a cleaning fluid supply unit. The cleaning solution supply unit has at least one spray nozzle by which cleaning solution is sprayed onto the polishing pad and respective components of the CMP equipment.

Abstract: A dressing apparatus dresses a polishing surface of a polishing table used for polishing a workpiece such as a semiconductor wafer in a polishing apparatus. The dressing apparatus comprises a dresser body (31) connected to a dresser drive shaft (23) which is vertically movable, a dresser plate (32) which is vertically movable with respect to the dresser body (31), and a dressing member (22) held by the dresser plate (32) for dressing the polishing surface (1a).

Abstract: An ironing assembly for use in chemical mechanical planarization (CMP) is provided. The ironing assembly is designed for use over a linear polishing pad which has a plurality of asperities and applied slurry. The ironing assembly includes an ironing disk having a contact surface. The ironing disk is oriented over the linear polishing pad such that the contact surface of the ironing disk can be applied over the surface of the linear polishing pad to at least partially flatten the plurality of asperities before planarizing a semiconductor wafer surface over the linear polishing pad.

Abstract: A polishing pad conditioner for a chemical-mechanical polishing apparatus includes a conditioning plate having a first recess and a holder having a second recess. The first recess is formed on the upper face of the conditioning plate, and the second recess is formed on the bottom face of the holder. A first filling member having a specific gravity smaller than that of the conditioning plate fills up the first recess, and a second filling member having a specific gravity smaller than that of the holder fills up the second recess. Therefore, the weight of the polishing pad conditioner can be reduced, and the durability and service life of an air bladder that adjusts the height of the polishing pad conditioner can be improved.

Abstract: A chemical mechanical polishing (CMP) tool holds a conditioning disk that is used to remove impurities from a polishing disk used to planarize surfaces, such as a semiconductor surface. The tool uses an elastic disk that is positioned between a clamp and a gimbal hub that pivotally overlies a gimbal plate. The elastic disk is a polymer material, such as for example polytetrafluoroethylene (PTFE). The elastic disk has a central opening and is radially solid around the central opening. Alignment holes and drive mechanism holes pierce the elastic disk which functions to rotate the tool with minimal friction and provides a liquid seal from CMP fluids. Access holes in the gimbal plate permit easy installation and removal of the individual components. The PTFE disk is strong and durable enough to withstand high torque and provide lengthy operation without maintenance.

Abstract: Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces are disclosed herein. In one embodiment, an end effector for conditioning a polishing pad includes a member having a first surface and a plurality of contact elements projecting from the first surface. The member also includes a plurality of apertures configured to flow conditioning solution to the polishing pad. The apertures can extend from the first surface to a second surface opposite the first surface. The member can further include a manifold that is in fluid communication with the apertures. In another embodiment, a conditioner for conditioning the polishing pad includes an arm having at least one spray nozzle configured to spray conditioning solution onto the polishing pad and an end effector coupled to the arm. The end effector includes a first surface and a plurality of contact elements projecting from the first surface.

Abstract: The present invention discloses a CMP pad dresser which has a plurality of uniformly spaced abrasive particles protruding therefrom. The abrasive particles are super hard materials, and are typically diamond, polycrystalline diamond (PCD), cubic boron nitride (cBN), or polycrystalline cubic boron nitride(PcBN). The abrasive particles are brazed to a substrate which may be then coated with an additional anti-corrosive layer. The anti-corrosive layer is usually a diamond or diamond-like carbon which is coated over the surface of the disk to prevent erosion of the brazing alloy by the chemical slurry used in conjunction with the CMP pad. This immunity to chemical attack allows the CMP pad dresser to dress the pad while it is polishing a workpiece. In addition to even spacing on the substrate, the abrasive particles extend for a uniform distance away from the substrate, allowing for even grooming or dressing of a CMP pad both in vertical and horizontal directions.

Abstract: A method and apparatus for conditioning a polishing pad is described, wherein the polishing pad has a polishing surface for polishing the semiconductor wafer. The method includes positioning a sonic energy generator above the polishing surface of the polishing pad, and applying sonic energy to the polishing surface of the polishing pad. The apparatus a sonic energy generator adapted to be positioned above the polishing surface, the sonic energy generator including a transducer, and a liquid carrier in flow communication with the transducer, wherein the transducer transmits sonic energy into the liquid carrier and the liquid carrier is applied to the polishing surface of the polishing belt.

Abstract: The invention relates to disks for conditioning pads used in the chemical mechanical polishing of semiconductor wafers, and a method of fabricating the pads. In one embodiment, the conditioning pad includes multiple, pyramid-shaped, truncated protrusions which are cut or shaped in the surface of a typically stainless steel substrate. Each of the truncated protrusions includes a plateau in the top thereof. A seed layer, typically titanium nitride (TiN), is provided on the surface of the protrusions, and a contact layer such as diamond-like carbon (DLC) or other suitable film is provided over the seed layer. In another embodiment, each of the protrusions is pyramid-shaped and includes a pointed apex at the top thereof.

Abstract: Conditioning devices, systems and methods for conditioning a contact surface of a processing pad used in processing microelectronic workpieces. One embodiment of a conditioning device comprises an end-effector having a conditioning surface configured to engage the contact surface of the processing pad and a plurality of microstructures on the conditioning surface. The microstructures can be arranged in a pattern corresponding to a desired pattern of microfeatures on the contact surface of the processing pad. In several embodiments, the microstructures are raised elements projecting from the conditioning surface and/or depressions in the conditioning surface. The condition surface can also be smooth. The conditioning device can also include a heater coupled to the end-effector for heating the processing pad.

Abstract: An apparatus and a method for off-line pre-conditioning a conditioning disc that is used in a chemical mechanical polishing process are provided. In the apparatus, an upper platform for mounting a conditioning disc thereto and a lower platform for mounting a polishing pad thereto are engaged together under a pre-set pressure and rotated in opposite directions for a pre-set length of time. The apparatus is effective in removing loose particles from the surface of the conditioning disc such that the possibility of any such particles causing scratches on a wafer surface during a subsequently conducted chemical mechanical polishing process is eliminated. The present invention novel apparatus can be used off-line for pre-conditioning a conditioning disc such that valuable machine time of a chemical mechanical polishing apparatus is not wasted.

Abstract: An improved burr for sharpening the grinding surface of a pulpstone includes a novel tooth configuration for better wear of the burr and enhanced grinding properties of the pulpstone. The profile configuration of the burr teeth has a truncated tip portion in the form of a rounded tip portion, a flat tip portion, or an obtusely angled tip portion to avoid a sharply pointed tip. The tip portion connects opposite sides of the tooth, with the sides forming either a symmetrical or an asymmetrical tooth profile using linear, convex involute, and concave involute side configurations. The present invention comprises a further improvement to a pulpstone sharpening burr, wherein the lead angle of the burr teeth changes periodically over the axial length of the burr to provide the pulpstone with a wave-like groove pattern.

Abstract: End effectors, apparatuses including end effectors for conditioning planarizing pads, and methods for manufacturing end effectors with contact elements to condition planarizing pads used in polishing micro-device workpieces are disclosed herein. In one embodiment, an end effector includes a member having a first surface and a plurality of generally uniformly shaped contact elements attached to the first surface. The uniformly shaped contact elements project generally transversely from the first surface. In a further aspect of this embodiment, the uniformly shaped contact elements can be conical, frusto-conical, cylindrical, or other suitable configurations. The contact elements can also have a wear-resistant, carbon-like-diamond, silicon, and/or silicon carbide layer. Furthermore, the contact elements can have generally rounded tips.

Abstract: A CMP machine dresser. The dresser includes a substrate, a first conductive layer and a second conductive layer respectively disposed and isolated in the substrate, a plurality of diamonds mounted in the first conductive layer and the second conductive layer, and a bonding layer disposed on the substrate for attaching the diamonds. The first conductive layer and the second conductive layer detect the conductive materials penetrating the original position of the diamonds when any of the diamonds dislodges, so as to determine the diamonds dislodgement.