Abstract: Systems and methods for monitoring characteristics of a polishing pad used in polishing a micro-device workpiece are disclosed herein. In one embodiment, a method for monitoring a characteristic of a polishing pad includes applying ultrasonic energy to the polishing pad and determining a status of the characteristic based on a measurement of the ultrasonic energy applied to the polishing pad. In one aspect of this embodiment, applying ultrasonic energy includes applying ultrasonic energy from a transducer. The transducer can be carried by a conditioner, a fluid arm, a micro-device workpiece carrier, or a table. In another aspect of this embodiment, determining the status of the characteristic includes determining a thickness, density, surface contour, roughness, or texture of the polishing pad.

Abstract: Systems and methods for conditioning polishing pads are disclosed. A system in accordance with one embodiment of the invention includes a polishing support configured to carry a microfeature workpiece polishing pad, and a conditioner positioned at least proximate to the support to condition a polishing pad carried by the support. The conditioner can include a first portion (e.g., an abrasive portion) having a first hardness and being positioned to contact a polishing pad carried by the support, and a second portion (e.g., a brush portion) having a second hardness less than the first hardness and being positioned proximate to the first portion.

Abstract: A chemical mechanical polishing apparatus having a conditioning cleaning device capable of efficiently cleaning a diamond pad is disclosed. The conditioner cleaning device of the present invention is capable of increasing cleaning efficiency by uniformly spraying a cleaning solution on upper and side faces of a diamond disk. When the diamond disk is efficiently cleaned, the process reliability of a wafer is increased.

Abstract: Conditioning devices, systems and methods for conditioning a contact surface of a processing pad used in processing microelectronic workpieces. One embodiment of a conditioning device comprises an end-effector having a conditioning surface configured to engage the contact surface of the processing pad and a plurality of microstructures on the conditioning surface. The microstructures can be arranged in a pattern corresponding to a desired pattern of microfeatures on the contact surface of the processing pad. In several embodiments, the microstructures are raised elements projecting from the conditioning surface and/or depressions in the conditioning surface. The condition surface can also be smooth. The conditioning device can also include a heater coupled to the end-effector for heating the processing pad.

Abstract: An apparatus for polishing a wafer comprising a rotatable polishing pad having a center of rotation and a rinse delivery conduit positioned adjacent to the polishing pad and substantially in radial alignment with the center. The rinse delivery conduit includes a plurality of nozzles to dispense a rinsing liquid. In one embodiment, the plurality of nozzles are configured and positioned to generate a higher flow rate of the rinsing liquid at the end of the rinse delivery conduit proximate to the center than at the end of the rinse delivery conduit distal to the center. In another embodiment, the rinse delivery conduit has a proximal end which is substantially adjacent the center and the distal end which is approximately adjacent an outer periphery of the pad.

Abstract: The present invention is a system for controlling a pad conditioner in a CMP device. The system includes a roughness-sensing device mounted in proximity to a polishing pad. The roughness-sensing device generates an output responsive to a roughness of the polishing pad. A signal-processing unit then generates a roughness value of the polishing pad in response to the output from the roughness-sensing device, and generates a control signal in response to the generated roughness value. Finally, a control device controls motion of the pad conditioner in response to the control signal.

Abstract: Conditioning devices, systems and methods for conditioning a contact surface of a processing pad used in processing microelectronic workpieces. One embodiment of a conditioning device comprises an end-effector having a conditioning surface configured to engage the contact surface of the processing pad and a plurality of microstructures on the conditioning surface. The microstructures can be arranged in a pattern corresponding to a desired pattern of microfeatures on the contact surface of the processing pad. In several embodiments, the microstructures are raised elements projecting from the conditioning surface and/or depressions in the conditioning surface. The condition surface can also be smooth. The conditioning device can also include a heater coupled to the end-effector for heating the processing pad.

Abstract: The invention includes a method for conditioning a surface of a polishing pad after chemical-mechanical polishing of a semiconductor substrate with the pad surface. The method includes exposing the pad surface to steam, and the steam can comprise ammonium citrate. The invention also includes an apparatus for conditioning a surface of a polishing pad after chemical-mechanical polishing of a semiconductor substrate with the pad surface. The apparatus includes a conditioning stone, and a steam outlet port proximate the conditioning stone. The steam outlet port is configured to jet steam onto the pad surface during the conditioning of the pad surface.

Abstract: A method and a system are provided for cleaning a CMP pad. The method starts by applying chemicals onto the surface of the CMP pad. The chemicals are then allowed to react with a residue that may be on the pad to produce by-products. Next, the pad surface is rinsed to substantially remove the by-products. A mechanical conditioning operation is then performed on the surface of the pad. In one example, the wafer surface can be a metal, such as copper. Where the wafer surface is copper, the chemical is most preferably HCl, and a solution includes HCl and DI water. Where the wafer surface is oxide, the chemical is most preferably NH4OH, and the solution includes NH4OH and DI water. Generally, the CMP pad can be in the form of a linear belt, in the form of an round disk, or in any other mechanical or physical configuration.

Abstract: A slurry dispensing apparatus for use with a chemical mechanical polishing tool for planarizing semiconductor substrates having irregular topology. The apparatus includes a slurry dispensing manifold with a first end suspended over a polishing pad, and a second end for mounting to the chemical mechanical polishing tool. The slurry dispensing manifold has a linear array of nozzles positioned under the suspended manifold. Each nozzle provides an adjusted slurry mixture that is supplied from bifurcated supply lines. A first branch supplying a slurry, and a second branch supplying deionized water. Each nozzle is capable of providing a particular slurry concentration to either decrease or to increase polishing rate in specific zonal areas on a substrate according to its surface topology.

Abstract: An apparatus for conditioning a polishing pad of a CMP apparatus for making semiconductor wafers is provided which includes a control arm configured to extend at least partially over a polishing pad. The apparatus also includes at least one cylindrical conditioning piece coupled to the control arm where the control arm is configured to apply the at least one cylindrical conditioning piece to the polishing pad.

Abstract: An eyeglass lens processing apparatus for processing an eyeglass lens includes: a processing chamber inside which a lens grinding tool is disposed; a tank which stores grinding water; a drain hose connecting the processing chamber with the tank; a filter for eliminating bubbles attached to an outlet of the drain hose, which includes a large number of pores having a size such that permits passing of processing debris stemming from rough processing and inhibits passing of bubbles larger than the processing debris.

Abstract: A polishing apparatus for polishing a substrate comprises a turntable having a polishing surface, a substrate holder for holding a substrate and bringing the substrate into contact under pressure with the polishing surface, a dresser including a dresser tool adapted to be brought into contact under a pressure with the polishing surface to dress or condition the polishing surface and a pressure device connected to the dresser for moving the dresser between a raised position where the dresser is spaced away from the polishing surface and a dressing position where the dresser rests on the polishing surface such that the dresser tool is in contact with the polishing surface under a pressure exerted by the weight of the dresser itself, the dresser comprising a follow-up mechanism allowing each one of dressing element to move up and down relative to a flange portion so as to follow a contour of the polishing surface of the turntable.

Abstract: Apparatuses and methods for planarizing a microelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone.

Abstract: A polishing surface is conditioned by pressing a diamond dresser against the polishing surface to thinly shave a surface of the polishing surface. Foreign matter clogging concavities formed in the polishing surface is scraped by pressing a brush dresser against the polishing surface in a state such that a polishing liquid is not supplied to the polishing table. A liquid composed of a mixture of a liquid or inert gas with pure water or a chemical liquid is ejected onto the polishing surface to clean the polishing surface.

Abstract: A method and apparatus for cleaning a web-based chemical-mechanical planarization (CMP) system. Specifically, a fluid spray bar is coupled to a frame assembly which may be mounted on a CMP system. The fluid spray bar will move along the frame assembly. As the fluid spray bar traverses the length of the frame assembly, a cleaning fluid is sprayed onto the web in order to clean the web between planarization cycles.

Abstract: A method and apparatus for cleaning a web-based chemical-mechanical planarization (CMP) system. Specifically, a fluid spray bar is coupled to a frame assembly which may be mounted on a CMP system. The fluid spray bar will move along the frame assembly. As the fluid spray bar traverses the length of the frame assembly, a cleaning fluid is sprayed onto the web in order to clean the web between planarization cycles.

Abstract: An abrading plate has a self-stopping capability such that when an object, such as a semiconductor wafer having a device structure that includes raised regions and depressed regions fabricated on the surface, is being polished, the raised regions are removed and polishing stops automatically. The abrading plate, to produce a flat and mirror polished surface on the an object, has abrasive particles having a chemical purity of not less than 90% and a particle size of not more than two micrometers, a binder material, and a given volume of porosity. A ratio of the abrasive particles and the binder material is not less than 1:0.5 by volume, and proportions of abrasive particles, a binder material and porosity are, respectively, not less than 10%, not more than 60% and 10-40% by volume. A surface is polished for a given duration with a liquid not containing abrasive particles so as to eliminate the raised regions and to obtain a flat surface.

Abstract: A reciprocal blade lapping machine (20) is taught that is used for sharpening cutting and shearing blades. The lapping machine consists a convex lap plate (32) mounted on an enclosure (22) rotated by an electric motor (34) connected to a speed reducer (36). A lapping compound distribution system is positioned directly above the lap plate and disperses lapping compound (64) onto the convex upper surface (48) of the lap plate providing an abrasive media for removing parent material from a set of blades placed on the lap plate. A conditioning ring (66), including dead weigh within, is rotatably disposed on the lap plate impacting directly upon the rotating lap plate maintaining the convex contour. A pair of reciprocating work piece holders (74) slideably rest on the lap plate, and alternately slide work pieces (76) backward and forward in a straight line on the rotating lap plate upper surface.

Abstract: A system and method for chemical mechanical polishing of a substrate is disclosed in which a polishing pad is conditioned by directing a fluid jet to the surface of the polishing pad. Thus, the use of expensive consumables, like conditioning pads comprising diamonds, can be avoided. Furthermore, the risk of substrates being scratched by diamonds lost from the conditioning pad is avoided.

Abstract: A hand-held cleaning tool for foam buffing pads includes a paddled cleaning wheel mounted for rotation on a shaft attached to the end of a pistol grip handle. The paddle cleaning wheel grips the foam buffing pad. The cleaning tool is operated by holding the same in operative contact with the rotatably driven pad.

Abstract: A wafer grinding apparatus includes a wafer-transporting device for transporting a wafer, a first nozzle, and a second nozzle. The wafer-transporting device includes at least a suction pad having a first surface and a second surface that is flexible for sucking the wafer, and a transporting mechanism connected to the first surface of the suction pad for transporting the wafer. The first nozzle is used for ejecting a first liquid to the first surface of the suction pad for cleaning the first surface, and the second nozzle is used for ejecting a second liquid to the second surface of the suction pad and the wafer for cleaning the second surface and the wafer.

Abstract: An apparatus for polishing a wafer comprising a rotatable polishing pad having a center of rotation and a rinse delivery conduit positioned adjacent to the polishing pad and substantially in radial alignment with the center. The rinse delivery conduit includes a plurality of nozzles to dispense a rinsing liquid. In one embodiment, the plurality of nozzles are configured and positioned to generate a higher flow rate of the rinsing liquid at the end of the rinse delivery conduit proximate to the center than at the end of the rinse delivery conduit distal to the center. In another embodiment, the rinse delivery conduit has a proximal end which is substantially adjacent the center and the distal end which is approximately adjacent an outer periphery of the pad.

Abstract: A method and system for cleaning conditioning devices used in chemical mechanical polishing (CMP) systems is disclosed. The system includes a robotic arm for holding and transporting the conditioning device between the polish pad area of the machine and the conditioning device cleaning area. The cleaning area consists of an ultrasonic tank containing a liquid for the purpose of removing particles, residues and contaminants from the conditioning device and its mounting hardware. Removal of contaminants from the conditioning device leads to reduced defect levels in the CMP process.

Abstract: A polishing cloth mounted on a turntable is dressed by bringing a dresser in contact with the polishing cloth for restoring the polishing capability of the polishing cloth. The dressing is performed by measuring heights of a surface of the polishing cloth at radial positions of the polishing cloth in a radial direction thereof determining a rotational speed of the dresser with respect to a rotational speed of the turntable on the basis of the measured heights, and dressing the polishing cloth by pressing the dresser are rotating. The dresser has an annular diamond grain layer or an annular SiC layer.

Abstract: Chemical mechanical polishing (CMP) equipment for use in planarizing a semiconductor wafer prevents slurry from being deposited on the surfaces of respective components of the equipment. The CMP equipment includes a turntable, a polishing pad mounted to the table so as to rotate with the table, a slurry supply unit for dispensing slurry onto the polishing pad, a polishing head unit for pressing a wafer downward atop the polishing pad, a conditioning unit for scoring the pad to maintain the surface of the polishing pad uniform, and a cleaning fluid supply unit. The cleaning solution supply unit has at least one spray nozzle by which cleaning solution is sprayed onto the polishing pad and respective components of the CMP equipment.

Abstract: In a polishing apparatus, a polishing tool including abrasive particles and a binder for bonding together the abrasive particles is pressed against a substrate to polish the substrate. The polishing apparatus has a light source for irradiating a polishing surface with light rays for weakening a bond force of the binder for bonding together the abrasive particles, and a waste matter removing mechanism for forcefully removing waste matter produced by polishing or waste matter produced by irradiation. By irradiating the polishing surface with the light rays, dressing of the polishing surface is performed, and products resulting from dressing and the like are removed. The polishing apparatus supplies abrasive particles to the polishing surface stably by dressing and allows high-speed polishing of the substrate.

Abstract: A dressing apparatus dresses a polishing surface of a polishing table used for polishing a workpiece such as a semiconductor wafer in a polishing apparatus. The dressing apparatus comprises a dresser body (31) connected to a dresser drive shaft (23) which is vertically movable, a dresser plate (32) which is vertically movable with respect to the dresser body (31), and a dressing member (22) held by the dresser plate (32) for dressing the polishing surface (1a).

Abstract: A polishing pad conditioner for a chemical-mechanical polishing apparatus includes a conditioning plate having a first recess and a holder having a second recess. The first recess is formed on the upper face of the conditioning plate, and the second recess is formed on the bottom face of the holder. A first filling member having a specific gravity smaller than that of the conditioning plate fills up the first recess, and a second filling member having a specific gravity smaller than that of the holder fills up the second recess. Therefore, the weight of the polishing pad conditioner can be reduced, and the durability and service life of an air bladder that adjusts the height of the polishing pad conditioner can be improved.

Abstract: In a method for controlling byproduct build-up on a polishing pad, a chemistry is introduced onto the top surface of the polishing pad in the presence of a source of kinetic energy. When the source of kinetic energy is a pressurized gas, the chemistry is sprayed onto the top surface of the polishing pad. When the source of kinetic energy is a brush that applies a force against the top surface of the polishing pad, the brush is used to brush the top surface of the polishing pad while applying the chemistry onto the top surface of the polishing pad through the brush. A CMP system for implementing this method includes one or both of a mixing manifold and a brush.

Abstract: A chemical mechanical polishing (CMP) tool holds a conditioning disk that is used to remove impurities from a polishing disk used to planarize surfaces, such as a semiconductor surface. The tool uses an elastic disk that is positioned between a clamp and a gimbal hub that pivotally overlies a gimbal plate. The elastic disk is a polymer material, such as for example polytetrafluoroethylene (PTFE). The elastic disk has a central opening and is radially solid around the central opening. Alignment holes and drive mechanism holes pierce the elastic disk which functions to rotate the tool with minimal friction and provides a liquid seal from CMP fluids. Access holes in the gimbal plate permit easy installation and removal of the individual components. The PTFE disk is strong and durable enough to withstand high torque and provide lengthy operation without maintenance.

Abstract: A polishing apparatus (100) is provided for polishing a substrate (102) that has slurry distributor (125) which improves planarization uniformity. Generally, the apparatus (100) includes: (i) a platen (106) with a polishing surface (110); (ii) a head (116) adapted to hold the substrate (102) against the polishing surface; (iii) a mechanism to rotate the platen (106) during polishing; (iv) a dispenser (124) having nozzles (126, 128) to dispense slurry on the surface (110); and (v) a distributor (125) between the nozzles (126, 128) and the head (116). In one embodiment, the apparatus (100) further includes a wiper (180) between the head (116) and the distributor (125) to remove used slurry and polishing byproducts from the surface (110), thereby reducing agglomerations or deposits that can damage the substrate (102) and improving yield.

Abstract: Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces are disclosed herein. In one embodiment, an end effector for conditioning a polishing pad includes a member having a first surface and a plurality of contact elements projecting from the first surface. The member also includes a plurality of apertures configured to flow conditioning solution to the polishing pad. The apertures can extend from the first surface to a second surface opposite the first surface. The member can further include a manifold that is in fluid communication with the apertures. In another embodiment, a conditioner for conditioning the polishing pad includes an arm having at least one spray nozzle configured to spray conditioning solution onto the polishing pad and an end effector coupled to the arm. The end effector includes a first surface and a plurality of contact elements projecting from the first surface.

Abstract: A grinding water tank unit which enables reuse of grinding water that has been used for processing an eyeglass lens, includes: a tank in which the grinding water is stored; a filter, disposed in the tank, for filtering the grinding water to be separate from processing debris, the filter having a sealed hollow portion; a first water suction pump; and a first water suction passage which connects the hollow portion to the first pump, and through which the grinding water filtered by the filter is sucked by suction of the first pump.

Abstract: A method and system for cleaning conditioning devices used in chemical mechanical polishing (CMP) systems is disclosed. The system includes a robotic arm for holding and transporting the conditioning device between the polish pad area of the machine and the conditioning device cleaning area. The cleaning area consists of an ultrasonic tank containing a liquid for the purpose of removing particles, residues and contaminants from the conditioning device and its mounting hardware. Removal of contaminants from the conditioning device leads to reduced defect levels in the CMP process.

Abstract: Conditioning devices, systems and methods for conditioning a contact surface of a processing pad used in processing microelectronic workpieces. One embodiment of a conditioning device comprises an end-effector having a conditioning surface configured to engage the contact surface of the processing pad and a plurality of microstructures on the conditioning surface. The microstructures can be arranged in a pattern corresponding to a desired pattern of microfeatures on the contact surface of the processing pad. In several embodiments, the microstructures are raised elements projecting from the conditioning surface and/or depressions in the conditioning surface. The condition surface can also be smooth. The conditioning device can also include a heater coupled to the end-effector for heating the processing pad.

Abstract: A pedestal of a load-cup for supporting wafers loaded onto and being unloaded from a chemical mechanical polishing (CMP) apparatus includes a pedestal plate, and a pedestal film which extends over only a limited area at the upper surface of the pedestal plate. This area includes the regions directly around the fluid ports provided in the pedestal plate for vacuum-chucking the wafers and spraying deionized water. The pedestal plate may have a cross-shaped part, the entirety of which bears the fluid ports. The pedestal film may include annular members each extending around only a respective one of the fluid ports, or one or more members each extending radially around several of the fluid ports. By offering a rather limited contact area to the wafer supported on the pedestal, the pedestal film reduces the amount of contaminants which could be transferred to the wafer surface in contact therewith.

Abstract: An apparatus for polishing a wafer includes a polishing station having a platen on which a polishing pad is installed, a polishing head having a membrane that contacts a surface of the wafer, the membrane securing the wafer and pressuring the wafer against the polishing pad, wherein the polishing station includes a transfer stage for loading the wafer on or unloading the wafer from the polishing head, and wherein the transfer stage includes a pedestal on which the wafer is placed and a fluid supply part for supplying a fluid into a boundary region between the wafer and the membrane to reduce a surface tension between the wafer and the membrane. Preferably, the apparatus further includes a stopper for preventing the wafer placed on the pedestal from being lifted up along with the membrane when the wafer is unloaded from the polishing head onto the pedestal.

Abstract: A chemical mechanical polishing (CMP) tool holds a conditioning disk that is used to remove impurities from a polishing disk used to planarize surfaces, such as a semiconductor surface. The tool uses an elastic disk that is positioned between a clamp and a gimbal hub that pivotally overlies a gimbal plate. The elastic disk is a polymer material, such as for example polytetrafluoroethylene (PTFE). The elastic disk has a central opening and is radially solid around the central opening. Alignment holes and drive mechanism holes pierce the elastic disk which functions to rotate the tool with minimal friction and provides a liquid seal from CMP fluids. Access holes in the gimbal plate permit easy installation and removal of the individual components. The PTFE disk is strong and durable enough to withstand high torque and provide lengthy operation without maintenance.

Abstract: A polishing apparatus comprises a polishing table having a polishing surface thereon, a top ring for pressing a workpiece to be polished against the polishing surface, and a dresser for dressing the polishing surface on the polishing table. The dresser comprises a dressing element provided on a surface of the dresser for dressing the polishing surface by sliding contact with the polishing surface, and an ejection nozzle provided on the surface of the dresser for ejecting a fluid supplied from a fluid source toward the polishing surface.

Abstract: A polishing apparatus for polishing a substrate comprises a turntable having a polishing surface, a substrate holder for holding a substrate and bringing the substrate into contact under pressure with the polishing surface, a dresser including a dresser tool adapted to be brought into contact under a pressure with the polishing surface to dress or condition the polishing surface and a pressure device connected to the dresser for moving the dresser between a raised position where the dresser is spaced away from the polishing surface and a dressing position where the dresser rests on the polishing surface such that the dresser tool is in contact with the polishing surface under a pressure exerted by the weight of the dresser itself, the pressure device including a member for applying an upward force to the dresser to decrease the pressure.

Abstract: A slurry removal control mechanism for a CMP polisher is provided. After slurry dispense has been terminated, a high pressure fluid spray removes the slurry from the polishing pad, while the plated causes the pad to rotate at a high rpm rate, thus clearing the slurry from contact with the wafer. Additionally, there is provided a slurry dispense bar including high pressure spray nozzles for providing a high pressure spray upon slurry dispense termination.

Abstract: A pad of an embedding tool is received on a faceplate. The pad is supported on a support member. When the embedding tool is urged against the surface of the faceplate, the pad is allowed to change the attitude relative to the support member in response to undulation generated on the surface of the faceplate. The movement of the flat surface follows the undulation of the faceplate. When a relative movement is induced between the embedding tool and the surface of the faceplate, the surface of the faceplate thus reliably receives the uniform or constant contact of the flat surface. When grains are supplied between the flat surface of the pad and the surface of the faceplate, the grains are uniformly pushed into the surface of the faceplate. In this manner, the grains are uniformly and constantly embedded into the surface of the faceplate.

Abstract: A chemical mechanical polishing apparatus includes a polishing pad. A pad conditioner includes a static conditioner head having a surface area configured to contact and condition the pad. The surface area has a first end proximate to an axis of rotation of the pad and a second end remote from the axis of rotation of the pad. The first end defines a first arc length, and the second end defines a second arc length, where the first arc length and the second arc length are substantially identical.

Abstract: A chemical mechanical polishing apparatus includes a polishing pad. A pad conditioner includes a static conditioner head having a surface area configured to contact and condition the pad. The surface area has a first end proximate to an axis of rotation of the pad and a second end remote from the axis of rotation of the pad. The first end defines a first arc length, and the second end defines a second arc length, where the first arc length and the second arc length are substantially identical.

Abstract: A pad conditioner of wafer planarization equipment includes a linear driving device for moving a disk holder up and down using a magnetic force. The linear driving device has an electromagnet, a permanent magnet, and a controller. The controller controls the power supplied to the electromagnet such that the electromagnet and permanent magnet produce a force of attraction and/or repulsion used to move the disk holder relative to a polishing pad of the wafer planarization equipment.

Abstract: The present invention comprises a chemical mechanical polishing tool comprising a polishing platen and a removable, replaceable platen top mounted on a top surface of the platen. Preferably, the platen top comprises a material substantially impervious to the slurries used when planarizing an object. Most preferably, the platen top comprises aluminum alloy or glass. The platen top may be tailored to provide enhanced polishing conditions by acting as an insulator, a conductor or machined to be concave or convex. The invention may further include endpoint sensors attached to the platen top.

Abstract: An abrasive article includes a plurality of abrasive particles securely affixed to a substrate with a corrosion resistant matrix material. The matrix material includes a sintered corrosion resistant powder and a brazing alloy. The brazing alloy includes an element which reacts with and forms a chemical bond with the abrasive particles, thereby securely holding the abrasive particles in place. A method of forming the abrasive article includes arranging the abrasive particles in the matrix material, and applying sufficient heat and pressure to the mixture of abrasive particles and matrix material to cause the corrosion resistant powder to sinter, the brazing alloy to flow around, react with, and form chemical bonds with the abrasive particles, and allow the brazing alloy to flow through the interstices of the sintered corrosion resistant powder and form an inter-metallic compound therewith.

Abstract: A polishing apparatus comprises a polishing table having a polishing surface thereon, a top ring for pressing a workpiece to be polished against the polishing surface, and a dresser for dressing the polishing surface on the polishing table. The dresser comprises a dressing element provided on a surface of the dresser for dressing the polishing surface by sliding contact with the polishing surface, and an ejection nozzle provided on the surface of the dresser for ejecting a fluid supplied from a fluid source toward the polishing surface.

Abstract: A method and apparatus for conditioning and monitoring a planarizing medium used for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a conditioning body having a conditioning surface that engages a planarizing surface of the planarizing medium and is movable relative to the planarizing medium. A force sensor is coupled to the conditioning body to detect a frictional force imparted to the conditioning body by the planarizing medium when the conditioning body and the planarizing medium are moved relative to each other. The apparatus can further include a feedback device that controls the motion, position, or force between the conditioning body and the planarizing medium to control the conditioning of the planarizing medium.