Abstract: A chemical mechanical polishing apparatus includes a rotatable platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature control system including a source of heated or coolant fluid and a plenum having a plurality of openings positioned over the platen and separated from the polishing pad for delivering the fluid onto the polishing pad, wherein at least some of the openings are each configured to deliver a different amount of the fluid onto the polishing pad.

Abstract: A chemical mechanical polishing (CMP) apparatus includes a polishing pad on a polishing platen, a polishing head on the polishing pad, the polishing head having a membrane to hold a wafer on the polishing pad, and a polishing slurry feeding line to feed a polishing slurry, and a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainer ring including a polishing slurry feeding inlet connected to the polishing slurry feeding line to feed the polishing slurry onto the polishing pad.

Abstract: An object of the present invention is to provide a polishing table capable of preventing peeling or detachment of a coating of the polishing table, thereby to enable an operation for replacement of a polishing pad to be easily conducted. One embodiment of the present invention provides a polishing table having a support surface configured to support a polishing pad, the polishing pad being adapted to be used for polishing a substrate, the polishing table comprising: a stacked body comprising a stack of a porous layer and a non-porous layer, the porous layer including open pores formed in a surface thereof disposed to face a polishing pad; and a resin-based coating material disposed in the open pores so as to form at least a part of the support surface of the polishing table.

Abstract: A water discharge system for a substrate processing apparatus comprising a substrate processor that processes a substrate using liquid, includes: at least two water discharge lines capable of discharging the liquid used in the substrate processor; a switching device configured to switch a water discharge line to which the liquid used in the substrate processor is to be discharged among the at least two water discharge lines; a measurement device configured to generate water discharge information by measuring the liquid used in the substrate processor; and a control mechanism configured to control the switching device in accordance with the water discharge information.

Abstract: A method of manufacturing a semiconductor structure, comprising: providing a preliminary structure having a first region and a second region and comprising a plurality of first trenches in the first region; forming a metal layer filling the first trenches covering on the preliminary structure, wherein the metal layer comprises a concave portion in the second region and the concave portion defines an opening; forming a metal nitride layer on the metal layer by an nitride treatment; and performing a planarization process to remove the metal nitride layer and a portion of the metal layer to expose the preliminary structure.

Abstract: The present invention provides a polishing solution distribution apparatus capable of reducing distribution deviation of polishing solution even when leveling for installation is insufficient or inclination of an installation location varies and a polishing apparatus having the same. The polishing solution distribution apparatus includes a cone-shaped branch body in which a solution pan to store supplied polishing solution is formed and in which plural flow passages radially connected to a side face of the solution pan respectively and having a delivery port to supply polishing solution to a position lower than the connected position are formed, a support portion to support the branch body, and a universal joint mechanism to support the branch body via the support portion at a position being higher than the gravity center of the branch body.

Abstract: Wet abrasive systems typically have a combination of equipment, controls, and piping systems that allow various fluid flows to be controlled in order to provide the various operations. A fluid control circuit is used to provide fluid to the correct locations for each operation. A fluid control circuit has a multiport selector valve. The selector valve allows selective fluid communication between the fluid inlet and either a first fluid outlet or a second fluid outlet. A first piping system is in fluid communication with the first fluid outlet and a second piping system is in fluid communication with the second fluid outlet. The fluid control circuit may also have jumper piping system between the first piping system and the second piping system. The combination of a multiport selector and the piping systems provide a convenient blast system to operate.

Abstract: Various embodiments of a semiconductor processing fluid delivery system and a method delivering a semiconductor processing fluid are provided. In aspect, a system for delivering a liquid for performing a process is provided that includes a first flow controller that has a first fluid input coupled to a first source of fluid and a second flow controller that has a second fluid input coupled to a second source of fluid. A controller is provided for generating an output signal to and thereby controlling discharges from the first and second flow controllers. A variable resistor is coupled between an output of the controller and an input of the second flow controller whereby the output signal of the controller and the resistance of the variable resistor may be selected to selectively control discharge of fluid from the first and second flow controllers.

Abstract: A wafer polishing apparatus is provided. The wafer polishing apparatus includes a first polishing roller disposed on a wafer, the first polishing roller extending in a direction in which the wafer extends and a second polishing roller disposed under the wafer, the second polishing roller extending in the direction in which the wafer extends. The wafer polishing apparatus uses the roller to polish the wafer. Thus, the wafer polishing apparatus may easily polish a wafer having a large area.

Abstract: A supplying system of adding gas into the polishing slurry and method thereof are described. The supplying system includes a slurry container, a gas-mixed container, an adjusting device, a first flow controller, and a second flow controller. The supplying system utilizes the adjusting device to mix the polishing slurry with gas for forming the gas-mixed polishing slurry. The supplying system of adding the gas into the polishing slurry and method thereof are capable of increasing the material removal rate of the surface of the substrate in order to improve the processing quality of the substrate.

Abstract: A polishing apparatus used in chemical mechanical polishing device is provided. The polishing apparatus includes a polishing plate for holding a wafer to be polished; a polishing pad arm, one end of the polishing pad arm being fixed, another end of the polishing pad arm holding a polishing pad, and the polishing pad arm driving the polishing pad for moving relatively to the wafer; the polishing pad moving relatively to the wafer with drive from the polishing pad arm, and the polishing pad arm ensuring the polishing pad contacting the wafer during movement; and a slurry supply route for supplying polishing slurry between the polishing pad and the wafer during polishing. The present invention also provides a chemical mechanical polishing device. It makes for realizing miniaturization of a chemical mechanical polishing device, saving polishing slurry and improving utilization rate of the polishing pad in the chemical mechanical polishing device to apply the present invention.

Abstract: The invention provides a polishing composition containing a pyrrolidone polymer, an aminophosphonic acid, a tetraalkylammonium salt, and water, wherein the composition has a pH of about 7 to about 11.7. The invention further provides a method of using such a polishing composition to polish a substrate, especially a substrate containing silicon.

Abstract: A gas-liquid separator includes: a gas-liquid separation tank; a gas-liquid introduction pipe configured to introduce a gas-liquid two-phase flow into the gas-liquid separation tank, the gas-liquid introduction pipe extending in the gas-liquid separation tank; a spray nozzle configured to spray pure water toward a liquid that has been collected on a bottom of the gas-liquid separation tank; a drain pipe communicating with a liquid discharge outlet provided in the bottom of the gas-liquid separation tank; and an exhaust pipe communicating with a gas discharge outlet provided in a side wall of the gas-liquid separation tank. The gas discharge outlet is located above a lower end of the gas-liquid introduction pipe.

Abstract: Embodiments of the present invention pertain to reducing agglomeration of particles while manufacturing a lapping plate using an oil-based slurry. According to one embodiment, an oil-based slurry with particles of a known size is applied to a lapping plate. The oil-based slurry is ultrasonically mixed while applying the oil-based slurry to the lapping plate in order to reduce agglomeration of the particles.

Abstract: The blasting material includes abrasives, and water in the range of 5 to 30 mass % both inclusive relative to a mass of the abrasives, the abrasives being prepared in advance such that all of the abrasives are uniformly wet.

Abstract: A device for polishing metallic workpiece surfaces. The device includes a tool holder which can be exchangeably fitted into a rotationally driven working spindle of a program-controlled milling machine, and a polishing tool, which is fastened in the tool holder. The device also includes a tool shank and a polishing head at the free end thereof, and is coupled to a polishing agent supply, which arrives at the effective surface of the polishing head. The tool shank contains a chamber, which can admit a pressure medium and is at least partially filled with the polishing agent, wherein this chamber is in connection with the polishing head by way of a channel and wherein the polishing head has polishing agent permeable material or it contains passages for the polishing agent that is forced out of the chamber.

Abstract: Prepping a surface entails entraining a coating particle into a fluid stream, directing the fluid stream containing the coating particle at the surface to be prepped to thereby prep the surface using the coating particle. The prepped surface can then be coated using the same or substantially similar coating particle. This technique can be used with a continuous airjet, a forced pulsed airjet, a continuous waterjet or a forced pulsed waterjet as the carrier stream. This invention solves the problem of foreign blasting particles becoming embedded in the atomic matrix of the surface to be prepped, which can result in unpredictable behavior of the surface properties and even catastrophic failure.

Abstract: A sand blaster is provided that includes an engine carried by an engine mounting plate. A frame is included and an engine support isolator engages the frame and carries the engine mounting plate. The engine support isolator has a stud that extends through a first coil and a stud guide that has a tapered inner surface. The stud extends through the stud guide. In other arrangements an air regulator that is adjustable is provided, and a nozzle that features reduced wear is provided.

Abstract: A chemical mechanical polishing (CMP) system includes a wafer polishing unit producing a used slurry; a slurry treatment system for receiving and treating the used slurry to thereby produce an extracted basic solution; and a post-CMP cleaning unit utilizing the extracted basic solution to wash a polished wafer surface. The post-CMP cleaning unit includes a plurality of rollers for supporting and rotating a wafer, a brush for scrubbing the wafer, and a spray bar disposed in proximity to the brush for spraying the extracted basic solution onto the polished wafer surface.

Abstract: An abrasive jet cutting system may include a differential pressure measurement apparatus configured to measure a differential pressure between points in an abrasive supply system. The differential pressure may be used to determine one or more conditions of the jet and the abrasive delivery. The measured differential pressure may be used in a feedback control system, feed forward control system, and/or an alarm or safety system.

Abstract: In a certain embodiment, the invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising an injector the leading edge of which possess bays, depressions or notches that capture spent slurry and hold it long enough for it to transfer heat from the polishing reaction to the pad or through the injector to the new slurry before the said spent slurry is thrown from the polishing pad. The effect is to considerably improve the removal rate, reduce slurry consumption and reduce operating time.

Abstract: A system and a method of operating a chemical mechanical polishing (CMP) system comprises a slurry delivering unit configured for locally varying the supply of slurry while polishing the substrate. To this end, the slurry delivering unit may comprise at least one slurry outlet over a polishing pad of the CMP system, wherein the at least one slurry outlet is controllably movable to distribute slurry over the polishing pad.

Abstract: In a method for producing a water jet (45) that contains abrasive and emerges under high pressure from a nozzle (44), uninterrupted operation with, at the same time, greater working performance and lower costs is made possible in that, in a first step, an abrasive suspension (34) containing abrasive and water is provided at normal pressure, in a second step the provided abrasive suspension (34) is brought to a working pressure that is greatly above normal pressure, and in a third step a water jet (45) containing abrasive is produced, with a nozzle (44), from the abrasive suspension (34) that is under the working pressure.

Abstract: A pad conditioning disk, a pre-conditioning unit, and a CMP apparatus having the same are provided. The pad conditioning disk includes a base in which mountain-type tips and valley-type grooves are repeatedly connected to each other, and a cutting layer formed on the base layer. The cutting layer including conditioning particles deposited on surfaces of the tips and grooves. A surfaces roughness of conditioning particles deposited on the surfaces of the tips is less than a surface roughness of conditioning particles deposited on the surfaces of the grooves.

Abstract: The Food Grade USDA Abrasive Media System is an aqueous slurry Food Grade USDA abrasive media or FDA Approved aqueous slurry toothpaste formula system, or differential pressurized variable control regulation closed-type Food Grade USDA abrasive media or FDA Approved toothpaste formula system. The aqueous slurry type system pumps aqueous slurry media from an aqueous slurry pump. The differential pressurized variable control regulation closed-type system utilizes negative pressurized air or drawing the media from a control valve. The hallmark of The Food Grade USDA Abrasive Media System is light and easy to operate opening the door to whole new market of customers to safely perform paint stripping and cleaning tasks. Efficiency of operation is acquired by way of diffusion, equal particle distribution, and the effective Food Grade USDA Abrasive Media System can compete against harmful paint thinners, petroleum distillates, and chemical cleaners.

Abstract: A method includes: charging a polishing material into a polishing apparatus that polishes a surface of a cylindrical film including a resin; alternately and repeatedly performing a surface-roughening operation of causing the polishing material to collide with the surface of the cylindrical film, thereby roughening the surface, and a cylindrical film replacing operation of replacing the cylindrical film on which roughening of the surface has been completed with another cylindrical film on which roughening of the surface has not been completed; replacing the polishing material by partially discharging the polishing material, and charging a new polishing material so that the percentage of the new polishing material with respect to the total amount of the polishing material after the new polishing material is charged becomes 30% by weight or more; and alternately and repeatedly performing the surface-roughening operation and the cylindrical film replacing operation again.

Abstract: Embodiments of the invention provide a slurry delivery and rinse system for a chemical mechanical polishing (CMP) apparatus which is capable of self-cleaning, and which can adjustably deliver the slurry agent and rinse agent over a polishing pad. In one embodiment, the fluid delivery system has a distributed slurry delivery arm (DSDA) which contains at least one manifold, usually two or more manifolds attached to the lower surface of the delivery arm. Each DSDA manifold contains a plurality of slurry nozzles disposed along the length of the manifold. The delivery arm also contains a plurality of high pressure rinse nozzles extending from the lower surface of the delivery arm and disposed along the length of the delivery arm, parallel to each DSDA manifold. In one example, the delivery arm contains two DSDA manifolds disposed parallel to each other and a plurality of high pressure rinse nozzles disposed between the manifolds.

Abstract: Disclosed is a device for supplying slurry for semiconductor in a polishing process when the semiconductor is manufactured. The slurry supply apparatus includes: a storage tank in which the slurry is stored; a plurality of pressure vessels connected to the storage tank, respectively, for receiving the slurry from the storage tank and discharging the slurry to the outside; an aspiration unit connected to the pressure vessels, for generating a vacuum pressure in the pressure vessels; and a centrifugal separation unit installed in a connection line of the aspiration unit between the pressure vessels and the aspiration unit, for separating foreign substances contained in the introduced compressed air from the compressed air by using a centrifugal force.

Abstract: A chemical mechanical polishing aqueous dispersion including (A) silica particles, and (B1) an organic acid, the sodium content, the potassium content, and the ammonium ion content of the silica particles (A) determined by ICP atomic emission spectrometry, ICP mass spectrometry, or ammonium ion quantitative analysis using ion chromatography having a relationship in which the sodium content is 5 to 500 ppm and at least one of the potassium content and the ammonium ion content is 100 to 20,000 ppm.

Abstract: Systems for recycling slurry materials during polishing processes are provided. One system includes a polisher having an inlet and drain outlet, and a slurry storage tank to supply a slurry including a preselected material to the polisher inlet, and a recycling assembly including a cross flow filter including an inlet to receive a waste slurry including the preselected material from the polisher drain outlet, where the cross flow filter is configured to concentrate the preselected material in an outlet slurry, a density meter configured to measure a concentration of the preselected material in the filter outlet slurry, a valve coupled to the filter outlet and configured to supply the slurry storage tank, and a controller coupled to the density meter and valve, where the controller is configured to open the valve when the concentration of the preselected material reaches a first concentration threshold.

Abstract: The present disclosure relates to a slurry distribution system having a distribution tube connected between a mixing tank and a CMP tool. The mixing tank is configured to generate a polishing mixture comprising a diluted slurry having abrasive particles that enable mechanical polishing of a workpiece. The polishing mixture is transported between the mixing tank and a CMP tool by way of a transport piping. An energy source, in communication with the transport piping, transfers energy to the abrasive particles within the polishing mixture, thereby preventing accumulation of the abrasive particles within the transport piping.

Abstract: A glass polishing system includes a lower unit capable of rotating a glass placed at a fixed position, an upper unit contacting with the glass and capable of being passively rotated due to the rotation of the glass, a moving unit for moving the upper unit in a horizontal or vertical direction, and a polishing slurry supply unit for supplying a polishing slurry to the glass through the upper unit.

Abstract: A processing apparatus is provided to process a workpiece. The processing apparatus can have a low-profile nozzle system capable of navigating through spaces in order to process target regions with relatively small clearances. A fluid jet outputted from the nozzle system is used to cut, mill, or otherwise process the target region of the workpiece.

Abstract: A wire saw apparatus having: a wire wound around grooved rollers and axially travels in a reciprocating direction; a nozzle for supplying a slurry; and a work-feeding mechanism feeding a work toward the wire, and slicing into wafers by pressing and feeding the work against the wire traveling in a reciprocating direction while a slurry is supplied to the wire through the nozzle. A work-holding portion holds the work through a pad plate adhered to the work and a work plate, plate-shaped or block-shaped slurry-splash-blocking members are arranged in the direction of a right angle to a row of the wire wound around the grooved rollers below the work-holding portion and on both the wire cut-in side and a wire cut-out side.

Abstract: A system and a method for removing a coating from a substrate. The system provides a compressed air source, a heated water source, a particulate cleaning medium source, and a mixing valve including an air input, a water input, and a particulate cleaning medium input. The inputs are positioned on the valve so that the water input is positioned downstream of the compressed air input, and the particulate cleaning medium input is positioned downstream of both the compressed air and water inputs. The method of mixing the air, water, and particulate cleaning medium provides a coating removal mixture having a volumetric ratio of air to water of at least 100:1 and a volumetric ratio of air to particulate cleaning medium of at least 70:1.

Abstract: A machine has a head with a nozzle, a pipe for supplying water under pressure to the nozzle, and a duct for supplying an abrasive agent, and adding it to the jet of water under pressure. The duct has a first duct portion, fixed with respect to the head in the movements of rotation about a main axis, and a second duct portion, which is fixed with respect to the movements of rotation. A rotating distributor connects the first rotating portion with the second fixed portion of the duct for supplying the abrasive agent. The distributor's stator and rotor are rotatably mounted on one another without the interposition of seal rings and define between them an internal chamber that is substantially at atmospheric pressure and from which the abrasive agent drops by gravity to a duct outlet that converges into the pipe for supplying water under pressure.

Abstract: The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids; a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms; a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and an N-substituted imidazole (E) represented by the following general formula (1). (In the formula (1), Ra, Rb, and Rc represent H or an alkyl group of 1 to 4 carbon atoms, and Rd represents a group selected from the group consisting of a benzyl group, a vinyl group, an alkyl group of 1 to 4 carbon atoms, and a group in which a portion of H of these groups has been substituted with OH or NH2.

Abstract: An elongated liquid polish dispenser is described that can be secured to and released from a bracket that stays on a hand-held rotary buffer such that a switch on the polisher is in a convenient position for an operator to press while gripping the polisher. A portion of the dispenser can be inserted through a hole in the bracket, and the entire dispenser can be rotated so that tabs securely attach the dispenser to the bracket and tool. The switch activates an electric pump which pumps liquid polish through a nozzle and onto a work surface.

Abstract: A slurry supply system with multiple supply modules and a flushing module concurrently coupled to the multiple supply modules is provided. Each supply module includes a slurry reservoir and at least one delivery line connecting to the slurry reservoir, wherein each delivery line is oriented toward a chemical mechanical polishing apparatus. The flushing module includes a flushing liquid reservoir and multiple flushing lines connecting to the flushing liquid reservoir, wherein each flushing line is coupled to each delivery line thereby the flush module can selectively flush one of the delivery lines.

Abstract: A polishing apparatus can perform more precise control of a polishing profile without carrying out many polishing tests in advance. The polishing apparatus includes: a polishing table 22 having a polishing surface 52a; a top ring 24 for holding a polishing object W and pressing the polishing object W against the polishing surface 52a; a polishing liquid supply nozzle 26 for supplying a polishing liquid to the polishing surface 52a; a movement mechanism 70 for moving a polishing liquid supply position 26a of the polishing liquid supply nozzle 26 approximately along the radial direction of the polishing surface 52a; a controller 66 for controlling the movement mechanism 70; and a simulator 72 for predicting the relationship between the polishing liquid supply position 26a of the polishing liquid supply nozzle 26 and a polishing profile, performing a simulation and outputting data to the controller 66.

Abstract: An automatic loader of abrasive sand into a storage and supply tank (T) of a machine tool that uses the abrasive sand, and in particular of a cutting machine, includes a loading chamber (1) for loading the abrasive sand arranged above the supply opening of the tank (T) and having a suction inlet, connected through an air suction pipe (6) to a vacuum pump (2), and a sand inlet, in a lower position, connected through a sand suction pipe (7) to a supply container (S) for abrasive sand. A filter (F) is arranged inside the loading chamber (1), between the suction inlet and the sand inlet, and the loading chamber (1) is closed below by a butterfly valve (9) provided with spring element apt to retain the valve in the closed position when there is no sand inside the loading chamber (1).

Abstract: An optical disk restoration apparatus and optical disk restoration method are provided, which are capable of achieving a high level of capability of restoring a scratched optical disk, without consuming the time and labor of an operator, while reducing the production cost of the apparatus. During a polishing process, an appropriate amount of a polishing agent is dropped onto the readout surface of the optical disk by a polishing agent supply pump to continuously supply the polishing agent to the interface between the optical disk and polishing pads, while a polishing water supply pump is operated to replenish the polishing agent with moisture evaporated by the polishing heat. By this mechanism, the amount and physical properties of the polishing agent at the interface between the optical disk and the polishing pads are appropriately maintained for a long period of time, so that the restoration capability is maintained at high levels.

Abstract: A dispenser for a chemical-mechanical polishing (CMP) apparatus, includes a delivery arm disposed over a polishing pad of a CMP apparatus, at least a slurry delivery groove formed in the delivery arm and extending along a length of the delivery arm, and a plurality of first openings connected to the slurry delivery groove.

Abstract: A CMP slurry mix and delivery system includes at least one container for holding a polishing agent; a pump connected to the container for pumping the polishing agent to a point of use; and a slurry dispersion unit installed between the pump and the point of use, wherein slurry dispersion unit provides megasonic energy that is capable of dispersing the polishing agent flowing through the slurry dispersion unit.

Abstract: A waterjet system selectively produces fluid jets for water jet cutting or abrasive jets for abrasive-waterjet-cutting. The abrasive materials in the abrasive jet are determined based on the properties of the workpiece. The waterjet system includes an abrasive delivery system that is capable of delivering either a single abrasive or a plurality of abrasives as an abrasive blend, to a cutting head assembly. The cutting head assembly entrains the abrasive into a fluid jet to form an abrasive jet.

Abstract: Particle-delivery devices, abrasive jet systems, and associated devices, systems, and methods are disclosed herein. In certain aspects, the particle-delivery devices can include an elongated fluidizing chamber and a metering assembly. The metering assembly can include a particle flow path extending from the fluidizing chamber. The metering assembly can also include a carrier-gas passage extending to an injection orifice proximate the fluidizing chamber. The metering assembly can be configured to inject carrier gas into the fluidizing chamber to fluidize particles within the fluidizing chamber. Fluidizing the particles at different carrier-gas pressures and/or flow rates can change the rate of particle delivery. For example, the metering assembly can include a metering opening and a regulator configured to change a steady-state pressure and/or flow rate of carrier gas entering the fluidizing chamber.

Abstract: Systems and methods for fluidizing an abrasive particulate material for an abrasive water jet are disclosed herein. In one embodiment, the abrasive material is delivered to a metering orifice in a distributor. Pressurized pulses of air can be directed around a circumference of the distributor to at least partially fluidize the particulate material to facilitate the material passing through the metering orifice. From the metering orifice, the abrasive particulate material is entrained in a water jet for a cutting procedure or other suitable application.

Abstract: A chemical mechanical polishing method and apparatus provides a deformable, telescoping slurry dispenser arm coupled to a dispenser head that may be arcuate in shape and may also be a bendable telescoping member that can be adjusted to vary the number of slurry dispenser ports and the degree of curvature of the dispenser head. The dispenser arm may additionally include slurry dispenser ports therein. The dispenser arm may advantageously be formed of a plurality of nested tubes that are slidable with respect to one another. The adjustable dispenser arm may pivot about a pivot point and can be variously positioned to accommodate different sized polishing pads used to polish substrates of different dimensions and the bendable, telescoping slurry dispenser arm and dispenser head provide uniform slurry distribution to any of various wafer polishing locations, effective slurry usage and uniform polishing profiles in each case.

Abstract: Polishing systems, subsystems and pads adapted for use in conjunction with a polisher. A relatively incompressible backing pad is configured to be attached to a drive system of the polisher. The backing pad includes at least one substantially straight backing pad edge along a perimeter thereof. A relatively compressible polishing pad is configured to be attached to the backing pad, to be driven in contact with a surface to be polished. The polishing pad includes at least one substantially straight polishing pad edge along a perimeter thereof corresponding to the at least one substantially straight backing pad edge when the polishing pad is attached to the backing pad.

Abstract: A glass polishing system includes a lower unit capable of rotating a glass placed at a fixed position, an upper unit capable of contacting with the glass and being passively rotated due to the rotation of the glass, and a moving unit for moving the upper unit in a horizontal and/or vertical direction. The upper unit includes a platter installed to a spindle of the moving unit, a separative platter separatably installed to the platter and having a polishing pad contacting with the glass, and a vacuum chuck for fixing the separative platter with respect to the platter by means of vacuum.