Abstract: The present invention relates to methods and apparatus for improving productivity of chemical mechanical polishing (CMP) processes and lowering operating costs of CMP systems. Embodiments of the present invention provide a method for improving the ratio of the layer thickness of composite polishing pads for improved removal rates. Embodiments of the present also provide specific polishing pad identification for monitoring and controlling processes developed for the specific pad to improve overall productivity and reduce downtime of the CMP system.

Abstract: A diluted slurry supplying apparatus utilized in a polishing apparatus for finishing a semiconductor wafer with a slurry containing colloidal silica and water-soluble polymer is provided. The polishing method comprises: a slurry supplier capable of supplying the slurry containing the colloidal silica and the water-soluble polymer; a diluent supplier capable of supplying a diluent containing an aggregation preventing agent to dilute the slurry; a mixer capable of receiving the slurry and the diluent having been supplied from the slurry supplier and the diluent supplier, respectively, the mixer forming a diluted slurry with a pH value of at least 9; and an ultrasonic vibrator capable of applying an ultrasonic vibration to the diluted slurry staying in the mixer or being fed out from the mixer. Here, the diluent supplying apparatus can change a dilution proportion of the diluted slurry.

Abstract: A surface treating apparatus treats a substrate surface by rotating a cylindrical polishing member in a state where the polishing member makes contact with the substrate surface. A polishing liquid is supplied to a polishing liquid passage that is provided in a central portion of the polishing member, and the polishing liquid is supplied to the substrate surface by rotating the polishing member while filtering the polishing liquid by a foam member provided on an outer periphery of the polishing liquid passage. Aperture diameters of the foam member are larger on the side of the polishing liquid passage than on the outside of the polishing member.

Abstract: A holding mode is selectively switched, in accordance with the content of processing of a substrate, among three holding modes: (a) a first holding mode in which while first support pins F1 through F12 abut on the back surface of a substrate W and support the substrate W, the substrate W is held because of nitrogen gas which is supplied to the front surface of the substrate W; (b) a second holding mode in which while second support pins S1 through S12 abut on the edge surface of the substrate W as the substrate W moves along the horizontal direction, thereby restricting horizontal movement of the substrate W, and abut on the back surface of the substrate W, thereby supporting the substrate W, the substrate W is held because of nitrogen gas which is supplied to the back surface of the substrate W; and (c) a third holding mode in which while the first and the second support pins F1 through F12 and support pins S1 through S12 abut on the back surface of the substrate W, the substrate W is held because of nitroge

Abstract: A dresser supply device of a grinding tool which supplies powdery dresser to a grinding tool having an abrasive grain layer on cutting blade tips, the dresser supply device comprising: an air supply source which supplies air; a dresser supply air pipe including a base end which is connected to the air supply source; a dresser tank which holds the dresser; a dresser supply pipe which connects the dresser tank and the dresser supply air pipe to each other, is smaller in diameter than the dresser supply air pipe at a connecting portion with the dresser supply air pipe, has a first tip inserted and projecting into the dresser supply air pipe, and is located at a space from an inner peripheral surface of the dresser supply air pipe; and an opening-and-closing valve which is provided in the dresser supply air pipe between the connecting portion and the air supply source side.

Abstract: A pedestal pad (workpiece supporting table pad) is arranged on the top of a pedestal (workpiece supporting table) for temporarily placing and holding a pre-polished or post-polished wafer (workpiece). This pedestal pad is formed of resin, and at least a surface of the pedestal pad which comes into contact with the wafer is non-absorbable to a fluid. The tissue of the pedestal pad is dense and smooth, and does not have any cavity, such as fine holes, which holds the fluid.

Abstract: An abrasive supply system may, for example, be used to supply abrasive particles such as garnet to a cutting nozzle of an abrasive jet cutter. According to an embodiment, the abrasive is propelled by a substantially constant flow rate gas source. According to an embodiment, the system may be supplied with abrasive from an atmospheric pressure abrasive hopper. According to an embodiment, a controller automatically actuates refilling of an abrasive tank from the abrasive hopper, and then automatically closes an abrasive supply valve and restarts abrasive propulsion. According to an embodiment, the controller may include or consist of pneumatic logic.

Abstract: A method of planarizing a semiconductor structure comprises moving a conditioning element on a surface of a polishing member, rotating the semiconductor structure relative to the polishing member against the surface of the polishing member, and rinsing the surface of the polishing member and the semiconductor structure. While the conditioning element is moved over the surface of the polishing member and the semiconductor structure is rotated against the surface of the polishing member, slurry is directed onto the polishing member. The step of rinsing comprises contacting the conditioning element to the surface of the polishing member.

Abstract: A substrate polishing apparatus includes a substrate holding mechanism having a head for holding a substrate to be polished, and a polishing mechanism including a polishing table with a polishing pad mounted thereon. The substrate held by the head is pressed against the polishing pad on the polishing table to polish the substrate by relative movement of the substrate and the polishing pad. The substrate polishing apparatus also includes a substrate transfer mechanism for delivering the substrate to be polished to the head and receiving the polished substrate. The substrate transfer mechanism includes a substrate to-be-polished receiver for receiving the substrate to be polished, and a polished substrate receiver for receiving the substrate which has been polished.

Abstract: A coolant nozzle is used in a machine tool having a rotating bit. The nozzle includes a through-aperture for accommodating the bit. The nozzle has a coolant inlet and a number of coolant outlets at more than one angular position about the through-aperture. Internal surface portions define one or more passageways between the inlet and the outlets.

Abstract: In a coolant supply apparatus for a grinding machine, a wheel imbalance prevention device is operated within the period from the switching to the closed state of a shut-off valve which is provided on a conduit connecting a coolant supply to a coolant nozzle, until the stop of rotation of the grinding wheel and prevents the coolant remaining in a part of the conduit on the downstream side of the shut-off valve and in the coolant nozzle from dropping on the grinding surface of the grinding wheel during the stop in rotation of the grinding wheel. Thus, the occurrence of coolant which otherwise penetrates the grinding wheel to put the same out of balance is prevented.

Abstract: Semiconductor wafers have a front surface, a back surface, a notch, and an edge. A method of polishing a wafer includes polishing at least one of the surfaces and the notch of the wafer using a polishing pad and slurry. At least one surface of the wafer is cleaned of residual slurry. The cleaned surface is grasped by applying a vacuum to the cleaned surface of the wafer using a vacuum chuck. Edge of the wafer is polished using a pad and slurry while the wafer is grasped by the vacuum chuck.

Abstract: A rough-polishing method for conducting a rough polishing before mirror-finish polishing on a semiconductor wafer (W) using a polishing apparatus (1) includes a first polishing step for polishing the semiconductor wafer using slurry containing colloidal silica supplied by a slurry supplying unit (4) and a second polishing step for polishing the semiconductor wafer using alkali solution provided by mixing deionized water supplied from a deionized-water supplying unit (5) and alkali concentrate solution supplied by an alkali-concentrate-solution supplying unit (6). The pH value of the alkali solution and polishing time in the second polishing step are determined based on the load current value of the polishing table (2) in the first polishing step.

Abstract: A heatless slurry system for use with a glass removal apparatus for restoring a glass surface. The system comprises a slurry container and a pump mounted externally relative to the container to prevent heating of the slurry as the system is operated. Vacuum pressure is created by activation of the pump to promote circulation of the slurry within the tool, thereby allowing the latter to be worked against the surface.

Abstract: The present invention relates to a polishing apparatus for removing surface roughness produced at a peripheral portion of a substrate, or for removing a film formed on a peripheral portion of a substrate. The polishing apparatus includes a housing (3) for forming a polishing chamber (2) therein, a rotational table (1) for holding and rotating a substrate (W), a polishing tape supply mechanism (6) for supplying a polishing tape (5) into the polishing chamber (2) and supplied to the polishing chamber (2), a polishing head (35) for pressing the polishing tape (5) against a bevel portion of the substrate (W), a liquid supply (50) for supplying a liquid to a front surface and a rear surface of the substrate (W), and a regulation mechanism (16) for making an internal pressure of the polishing chamber (2) being set to be lower than an external pressure of the polishing chamber (2).

Abstract: Combinatorial processing including rotation and movement within a region is described, including defining multiple regions of at least one substrate, processing the multiple regions of the at least one substrate in a combinatorial manner, rotating a head in one of the multiple regions to perform the processing, and repositioning the head relative to the one of the multiple regions while rotating the head during the processing.

Abstract: A rough-polishing method for conducting a rough polishing before mirror-finish polishing on a semiconductor wafer using a polishing apparatus includes a first polishing step for polishing the semiconductor wafer using slurry containing colloidal silica supplied by a slurry supplying unit and a second polishing step for polishing the semiconductor wafer using alkali solution provided by mixing deionized water supplied from a deionized-water supplying unit and alkali concentrate solution supplied by an alkali-concentrate-solution supplying unit. The pH value of the alkali solution and polishing time in the second polishing step are determined based on the load current value of the polishing table in the first polishing step.

Abstract: This invention provides a method for increasing the cutting performance of a wire saw, in cutting a substrate, by increasing the association of the abrasive particles in the cutting slurry and the cutting wire, the enhancement being caused by the use of thickening agents in the cutting slurry or by increasing the attraction of the abrasive particles to the cutting wire.

Abstract: The double face polishing apparatus is capable of controlling an amount of supplying slurry to a lower polishing plate. The double face polishing apparatus comprises: a lower polishing plate and an upper polishing plate; a carrier provided between the polishing plates, the carrier having a through-hole for holding a workpiece; a plate driving unit for rotating the polishing plates; a carrier driving unit for rotating the carrier; ring-shaped ducts coaxially provided to the upper polishing plate; a slurry supply source supplying slurry to the ring-shaped ducts; and supply pipes for supplying the slurry to the lower polishing plate. The slurry is supplied to each of coaxial polishing zones of the lower polishing plate via the corresponding ring-shaped ducts and the supply pipes.

Abstract: A first supply unit sprays and supplies abrasive slurry containing abrasive grains into a mixing unit. A second supply unit sprays and supplies additive into the mixing unit. A third supply unit sprays and supplies pure water into the mixing unit. The mixing unit mixes the mist of abrasive slurry, the mist of additive and the mist of pure water to prepare polishing solution, and supplies the polishing solution onto the major surface of a polishing stage.

Abstract: A first supply unit sprays and supplies abrasive slurry containing abrasive grains into a mixing unit. A second supply unit sprays and supplies additive into the mixing unit. A third supply unit sprays and supplies pure water into the mixing unit. The mixing unit mixes the mist of abrasive slurry, the mist of additive and the mist of pure water to prepare polishing solution, and supplies the polishing solution onto the major surface of a polishing stage.

Abstract: A polishing pad cleaner of a chemical mechanical polishing apparatus throughly and efficiently cleans the polishing pad of the apparatus. The head of the polishing pad cleaner includes a nozzle support plate, a plurality of nozzles mounted to the nozzle support plate, and extending from the bottom of the nozzle support plate, and partitions interposed between the nozzles. The head is placed over the polishing pad. Subsequently, the polishing pad is roated relative to the nozzles, and cleaning agent is ejected from the nozzles. The partitions help maintain the pressure of the cleaning agent as the agent flows from the nozzles to the polishing pad. Also, different types of cleaning agents can be simultaneously ejected from the nozzles, respectively, onto the polishing pad. Specifically, a high pressure gas and a cleaning solution can be directed onto the same region of the pad one after the other.

Abstract: A rotating disk 20 that rotates in the horizontal direction is provided inside an abrasive tank 10, with a gap 3 being capable to rotate the rotating disk 20, being formed at one end 11a of a mixed fluid flow path 11 arranged on one surface of the rotating disk 20, and at one end 12a of a gas flow path 12 arranged facing other surface of the rotating disk 20 via the rotating disk 20 at one end of the mixed fluid flow path 11. Hole sections 21 are provided in the rotating disk 20 on a rotation locus passing through the gap 3, equally spaced and passing through in a thickness direction of the rotating disk 20, with stirrer blades 22 protruding from the upper surface of the rotating disk 20, and the rotating disk 20 being immersed in abrasive stored inside the abrasive tank 10, except for a part positioned in the gap 3.

Abstract: A polishing pad includes a guide plate, a porous slurry distribution layer and a flexible under-layer. Polishing elements are interdigitated with one another through the slurry distribution layer and the guide plate. The polishing elements may be affixed to the compressible under-layer and pass through corresponding holes in the guide plate so as to be maintained in a substantially vertical orientation with respect to the compressible under-layer but be translatable in a vertical direction with respect to the guide plate. Optionally, a membrane may be positioned between the guide plate and the slurry distribution layer. The polishing pad may also include wear sensors to assist in determinations of pad wear and end-of-life.

Abstract: A slurry supply unit for a CMP apparatus is disclosed. The slurry supply unit includes a slurry flow sensor in a slurry injection pipe to measure the flow of the injected slurry, an auxiliary pump engaged with a slurry distribution line to discharge the slurry at a predetermined flow, and a slurry flow control section regulating the flow of the discharged slurry by controlling the auxiliary pump if the flow of the slurry as measured by the slurry flow sensor deviates from a preset reference. Here, the slurry supply unit may be used in a CMP apparatus including a slurry supply tank; a slurry circulation line connected to the slurry supply tank; a main pump circulating the slurry in the slurry circulation line; a CMP unit; and a slurry distribution line from the slurry circulation line to the slurry injection pipe of the CMP unit. If a planarization process of a semiconductor wafer is performed using the slurry supply unit, the amount of the slurry supplied to the apparatus can be controlled more precisely.

Abstract: Methods and apparatus are provided for concurrently chemically and mechanically polishing a substrate edge. The invention includes a substrate support adapted to rotate a substrate; a polishing head adapted to contact an edge of the substrate, the polishing head including a first channel adapted to apply a first fluid to the edge of the substrate; a second channel adapted to direct a second fluid onto a major surface of the rotating substrate; and a third channel adapted to direct a third fluid at the major surface of the substrate and to prevent the second fluid from diluting the first fluid. Numerous other aspects are provided.

Abstract: According to one embodiment of the invention, a chemical mechanical polishing monitoring system includes a pump delivering a slurry to a polishing pad and a rotation sensing device coupled to the pump. The rotation sensing device senses a rotation of the pump and generates a signal indicative of the rotation of the pump.

Abstract: The present invention related to a multiple fluid supplying apparatus for carrier of semiconductor wafer polishing system which comprises a rotary union at a driving side and a rotary union at a following side. The rotary union at a driving side comprises a central rotation axle; a fluid supplying tube body being disposed coaxially with the central rotation axle, being fixedly supported, and being formed with a plurality of fluid paths at an inside thereof; a sealing housing being disposed coaxially on an outer circumference of the fluid supplying tube body so as to be rotatably supported; and a sealing unit for maintaining air-tightness between the fluid supplying tube body and the sealing housing.

Abstract: Method of processing a workpiece comprising (a) providing a tool and a workpiece, wherein the workpiece has an initial shape; (b) placing the workpiece and the tool in contact to form an interface, applying force to the tool and/or the workpiece, and moving the tool and/or the workpiece to effect a change in the initial shape of the workpiece; (c) applying a lubricant to any area on a surface of the tool and/or to any area on a surface of the workpiece while the workpiece and the tool are in contact; and (d) applying a cryogenic fluid to any area on the surface of the tool and/or to any area on the surface of the workpiece while the workpiece and the tool are in contact.

Abstract: An object of the present invention is to provide a polishing method and a polishing apparatus that can secure an even polished shape and can remove slurry that has contributed to polishing and contains polishing by-product to the outside of a pad efficiently to reduce scratches due to the polishing by-product, and can suppress consumption of slurry to the minimum to realize cost reduction during running for mass production.

Abstract: A slurry delivery system, a chemical mechanical polishing (CMP) apparatus, and method for using the same are provided. An apparatus for supplying slurry to a polishing unit may include a first feed line through which an abrasive may be supplied at a first velocity. A velocity-changing member may be connected to the first feed line, and/or a velocity of the abrasive may be changed from the first velocity to. the second velocity different from the first velocity by the velocity-changing member. A second feed line may be connected to the velocity-changing member and/or an additive may be supplied through the second feed line. A supply line may be connected to the velocity-changing member. A slurry, which may be a mixture of the abrasive and/or the additive, may be supplied to a polishing unit through the supply line. Accordingly, the slurry may be more uniformly mixed and/or supplied to a polishing unit.

Abstract: A method and apparatus for ‘through-the-pad’ delivery of slurry polishing agents directly to the land areas of a polishing pad is disclosed. The present invention further provides for improved control of the chemical composition of the slurry to address loss of chemical reactivity of the slurry during the polishing cycle. Additionally, various groove modifications to the polishing surface of the pad are also disclosed for improved slurry retention over substantially the entire surface of the polishing pad and reduction of the slow band effect. The present invention thus provides for a higher degree of planarization and uniformity of material removed from the surface of a processed workpiece in order to eliminate, or otherwise reduce, small-scale roughness and large-scale topographic differentials as well as to reduce the Cost-of-Ownership associated with slurry costs.

Abstract: A multi-wire saw according to the present invention cuts a workpiece while supplying a slurry containing an alkali or mixed acid to a cutting interface between the workpiece and a wire, and includes: a storage tank with a heating mechanism for storing and heating the slurry; a thermal insulating pipe for transporting the slurry sent with a pump from the storage tank with a heating mechanism to a position before a position where the wire is incorporated into the workpiece, while keeping the slurry at a predetermined temperature; a thermostat for keeping a temperature in a vicinity of the workpiece fixed to a stage at the predetermined temperature; and a wire heating mechanism for heating the wire to the predetermined temperature. Consequently, the cutting resistance decreases during cutting machining of a silicon ingot, and the variation in the cutting resistance also decreases, whereby a high-quality wafer can be obtained at a high efficiency and a low cost.

Abstract: A conditioner including abrasive elements for conditioning a polishing pad to be used in abrasive semiconductor substrate treatment processes, such as chemical-mechanical polishing or chemical-mechanical planarization processes. The abrasive elements are formed from a material that may be degraded or dissolved by at least one chemical that will not substantially degrade or dissolve a material of the polishing pad. The abrasive elements of the conditioner may be degraded or dissolved in at least one chemical that will not substantially degrade or dissolve a material of the polishing pad. Any residue or particles of, or from, the abrasive elements that stick to or become embedded in the polishing pad are removed therefrom by exposing the polishing pad to the at least one chemical so as to degrade or dissolve the residue or particles without substantially degrading or dissolving a material of the polishing pad.

Abstract: A first supply unit sprays and supplies abrasive slurry containing abrasive grains into a mixing unit. A second supply unit sprays and supplies additive into the mixing unit. A third supply unit sprays and supplies pure water into the mixing unit. The mixing unit mixes the mist of abrasive slurry, the mist of additive and the mist of pure water to prepare polishing solution, and supplies the polishing solution onto the major surface of a polishing stage.

Abstract: A substrate polishing apparatus and method are described. A base includes at least one movable platen to engage a polishing pad. At least one carrier head assembly presses a substrate against the polishing pad substantially within a polishing area during a polishing operation. A polishing solution dispenser applies a polishing solution to the polishing pad substantially within the polishing area during the polishing operation. A polishing solution retaining mechanism is attached to one of the base or the carrier head assembly. The retaining mechanism engages a top surface of the polishing pad and retains the polishing solution substantially within the polishing area during the polishing operation. Some implementations may reduce polishing solution consumption and allow for increased angular velocity.

Abstract: A slurry dispensing apparatus for use with a chemical mechanical polishing tool for planarizing semiconductor substrates having irregular topology. The apparatus includes a slurry dispensing manifold with a first end suspended over a polishing pad, and a second end for mounting to the chemical mechanical polishing tool. The slurry dispensing manifold has a linear array of nozzles positioned under the suspended manifold. Each nozzle provides an adjusted slurry mixture that is supplied from bifurcated supply lines. A first branch supplying a slurry, and a second branch supplying deionized water. Each nozzle is capable of providing a particular slurry concentration to either decrease or to increase polishing rate in specific zonal areas on a substrate according to its surface topology.

Abstract: A system for removing scratches from glass windows, windshields and the like utilizing a compound applied to a powered polishing disk/pad which effectively “scrubs” away the scratches. Liquid needs to be applied during the process. To enable the operator to use both hands to maneuver the tool while also controlling the liquid application procedure, a hand piece is mounted to the tool which functions both as a second handle for the operator and also places a finger/thumb actuated liquid spray control accessible to the operator. A nozzle connected to the control and receiving liquid from the control is mounted for directing spray onto the glass surface outboard of the periphery of the pad.

Abstract: A grinding method is provided which can grind a processing surface of a workpiece by a blast processing without use of specific abrasives to obtain a glossy surface such as a mirror surface. Abrasives together with compresses fluid are injected to the processing surface of the workpiece with an incident angle ? to meet the condition shown in the following equation: 0<V·sin ??½·VEquation 1; V=speed of the abrasive in an injection direction ?=incident angle of the abrasive to the processing surface of the workpiece.

Abstract: A planarization method includes providing a Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a fixed abrasive article in the presence of a planarization composition, wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.

Abstract: A method and apparatus for making and using slurries for planarizing microelectronic-device substrate assemblies in mechanical and/or chemical-mechanical planarization processes. In one aspect of the invention, a bi-modal slurry is fabricated by removing a first type of selected abrasive particles from a first abrasive particle solution to form a treated flow of the first solution. The treated flow of the first solution is then combined with a flow of a second solution having a plurality of second abrasive particles. The abrasive particles of the first type are accordingly removed from the first solution separately from the second solution such that the second abrasive particles in the second solution do not affect the removal of the abrasive particles of the first type from the first solution. In another aspect of the invention, a second type of selected abrasive particles are removed from the second solution prior to mixing with the first solution.

Abstract: The present invention relates to a polishing method for polishing a workpiece by pressing the workpiece, to be polished, against a fixed abrasive and bringing the workpiece into sliding contact with the fixed abrasive. The polishing method includes a first step of polishing the workpiece while supplying a polishing liquid which contains an anionic surface-active agent and does not contain abrasive particles, and a second step of polishing the workpiece while supplying a polishing liquid which contains a cationic surface-active agent and does not contain abrasive particles.

Abstract: A moisturizing process for slurry delivery tubes in chemical mechanical polishing is disclosed. A mist of deionized water is dispensed directly into the tubes each time a high pressure spray bar automatically cycles. The tips of the tubes are kept wet enough to prevent the slurry from drying in and clogging the tubes. A fan-type spray nozzle is located in the bar and, when pressurized, dispenses a fine mist. A direction of the nozzle is modified to avoid overspraying the tool. Only the tips of the delivery tubes and part of the polishing pad receive the misted spray. The slurry is moisturized and never dries at the point of use as the mist is dispensed with each cycle of a pad rinse feature.

Abstract: A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.

Abstract: The fabrication of integrated circuits entails the repeated application of many basic processing steps, for instance, planarization—the process of making a surface flat, or planar. One specific technique for making surfaces flat is chemical-mechanical planarization, which typically entails applying slurry onto a surface of an integrated circuit and polishing the surface with a rotating polishing head. The head includes several holes, known as slurry dispensers, through which slurry is applied to the surface. After completion of a polishing operation, gas is forced through the slurry dispensers to separate the surface from the rotating head. Unfortunately, the gas dries slurry remaining on the surface, causing slurry particles to stick to the polished surface, which ultimately cause defects in integrated circuits.

Abstract: A chemical-mechanical polishing (CMP) method includes applying a solid abrasive material to a substrate, polishing the substrate, flocculating at least a portion of the abrasive material, and removing at least a majority portion of the flocculated portion from the substrate. Applying solid abrasive material can include applying a CMP slurry or a polishing pad comprising abrasive material. Such a method can further include applying a surfactant comprising material to the substrate to assist in effectuating flocculation of the abrasive material. Such surfactant comprising material may be cationic which includes, for example, a quaternary ammonium substituted salt. Also, for example, the surfactant comprising material may be applied during polishing, brush scrubbing, pressure spraying, or buffing.

Abstract: The invention provides a method of polishing a substrate, which method comprises the steps of (i) providing a polishing composition, (ii) providing a substrate comprising at least one metal layer, and (iii) abrading at least a portion of the metal layer with the polishing composition to polish the substrate. The polishing composition comprises an abrasive and a liquid carrier, wherein the abrasive comprises metal oxide particles having a surface with a silane compound adhered to a portion thereof and a polymer adhered to the silane compound and wherein the polymer is selected from the group consisting of water-soluble polymers and water-emulsifiable polymers. The invention also provides a polishing composition as described above, wherein the total amount of abrasive particles present in the polishing composition is no greater than about 20% by weight of the polishing composition, and the metal oxide particles do not comprise zirconia.

Abstract: Methods for removing material from microfeature workpieces are disclosed. A method in accordance with one embodiment of the invention includes disposing a surfactant-bearing polishing liquid between a doped silicon material of the microfeature workpiece and a polishing pad material. At least one of the workpiece and the polishing pad material is moved relative to the other to simultaneously and uniformly remove at least some of the doped silicon material from portions of the workpiece having different crystalinities and/or different doping characteristics. The surfactant can include a generally non-ionic surfactant having a relatively low concentration in the polishing liquid, for example, from about 0.001% to about 1.0% by weight.

Abstract: An apparatus for polishing a wafer comprising a rotatable polishing pad having a center of rotation and a rinse delivery conduit positioned adjacent to the polishing pad and substantially in radial alignment with the center. The rinse delivery conduit includes a plurality of nozzles to dispense a rinsing liquid. In one embodiment, the plurality of nozzles are configured and positioned to generate a higher flow rate of the rinsing liquid at the end of the rinse delivery conduit proximate to the center than at the end of the rinse delivery conduit distal to the center. In another embodiment, the rinse delivery conduit has a proximal end which is substantially adjacent the center and the distal end which is approximately adjacent an outer periphery of the pad.

Abstract: An apparatus and method for minimizing the size of agglomerated particles in a polishing fluid is provided. The method includes positioning a polishing pad between a sacrificial member and a support member such that the sacrificial member is in communication with the polishing pad, thereby causing the agglomerated particles to separate. The apparatus includes a polishing pad and a polishing fluid condition. The polishing fluid conditioner includes a sacrificial member and a support member, wherein the sacrificial member is in communication with the polishing pad so as to cause the agglomerated particles to separate.