Abstract: A device for regulating an amount of liquid fed to a hand-held tool for treating a constructional component and including a base body (1) connectable to the hand-held tool (38), an outlet channel (2) extending parallel to an axis of the base body and an outlet opening of which is located in a region of the connection of the base body with the tool, an inlet channel (7) extending relative to the outlet channel at an angle from 20° to 90°, and a valve member (12) arranged in the base body (1) for connecting the inlet channel (7) with the outlet channel (2) and having a manually adjustable adjustment member (15).

Abstract: Provided is a chemical mechanical polishing pad which as capable of draining used slurry from the polishing pad surface through the pad. Chemical mechanical polishing pads according to preferred embodiments of the present invention have slurry drain holes to drain slurry from the pad surface. In various preferred embodiments, the drain holes are combined with drain grooves in the pad surface and/or the pad/pad backing or pad/platen interface to provide a path for used slurry to exit the pad. The invention also provides a method of conducting CMP using through-pad slurry drainage.

Abstract: A wafer carrier structure for a chemical-mechanical polishing device. The wafer carrier structure includes a holder and a slurry supply pipeline. The slurry supply pipeline is attached to the side of the holder such that a portion of the supply pipeline near the outlet end is either parallel or perpendicular to the sidewall of the holder.

Abstract: The present invention relates to a novel supply system for chemicals which permits the preparation of solid-containing suspensions, which are required, inter alia, for polishing wafers or in semiconductor production, directly at the point of use.

Abstract: A slurry supply system disposed above the rotating platen of a chemical mechanical polishing apparatus. The slurry supply system includes a wafer carrier configured to hold a semiconductor wafer to be polished; a supporting arm to support the wafer carrier; a slurry supplier connected to the supporting arm and located on the front edge of the rotating direction of the rotating platen so that the slurry supplier is positioned opposite the wafer carrier; and a plurality of openings formed on the slurry supplier to feed chemical mechanical polishing fluids, each of the openings individually supplied with individual control of the chemical mechanical polishing fluids.

Abstract: A grinding water tank apparatus includes a tank for storing grinding water to be used for machining a peripheral edge of an eyeglass lens and recycles the grinding water stored in the tank by circulation. The apparatus further includes an air filter provided at a position in a space higher than the water surface of the grinding water in the tank, and a suction unit for drawing bubbles developing in the tank by way of the air filter.

Abstract: An abrading composition and a process for abrading factory pre-finished surface coverings, wherein the abrading composition comprises an effective amount of wear-resistant particles, a rheology modifier, and a solvent. This invention further relates to a process to abrade wood floor surfaces and factory pre-finished wood floor surfaces, as well as a process for refinishing a factory pre-finished wood floor using the abrading composition.

Abstract: The slurry used in a chemical-mechanical polisher is passed through a filter, and output at a constant flow rate throughout the lifetime of the filter by measuring the flow rate of the slurry, comparing the measured flow rate to a reference set point rate, and adjusting the pump speed of a slurry pump when the measured flow rate differs from the reference set point rate.

Abstract: The invention is a slurry distribution system for controlling the distribution of slurry across a top surface of a polishing pad. The polishing pad may be supported by a platen and be part of a polishing station in a chemical mechanical polishing tool. Two juxtaposed perforated manifolds below the polishing pads are used as the primary means of controlling the distribution of slurry. A motor is used to rotate at least one of the perforated manifolds until a desired pattern of aligned perforations below the polishing pad has been achieved. By initially creating the perforations in each manifold in a particular pattern, many different patterns of aligned perforations may be obtained. Patterns may advantageously be made possible that have concentrations of aligned perforations in the center, middle and/or periphery of the manifolds. The polishing pad will have a slurry distribution corresponding to the concentration of aligned perforations in the manifolds.

Abstract: A polishing device includes a polishing surface plate which is driven rotatively, a polishing cloth attached on a surface of the polishing surface plate, an abrasive feeding mechanism feeding abrasive on the polishing cloth, a wafer holding mechanism holding a semiconductor wafer, and a guide member arranged on the polishing cloth and having a groove to allow the abrasive to pass therethrough and guide the abrasive to an inward side of the polishing surface plate.

Abstract: A slurry distributor having a base section, a main body section, a distributing structure (sidewall section) and a connecting structure. The main body section is above the base section and the distributing structure is above the main body section. The distributing structure accommodates one or more types of slurry, mixes up the different slurry types and channels out the well-mixed slurry. The distributing structure also has a plurality of holes close to the main body section. The connecting structure is inside the base section for engaging with a chemical-mechanical polishing installation.

Abstract: There is disclosed a polishing cloth having an abrasive layer containing a polymer material which is a hydrolyzable with an aqueous medium and being capable of exhibiting a stable polishing performance for a relatively long period of time without necessitating a dressing treatment.

Abstract: A method and apparatus for delivering a polishing fluid to a chemical mechanical polishing surface is provided. In one embodiment, an apparatus for delivering a polishing fluid to a chemical mechanical polishing surface includes an arm having a plurality of holes formed in the arm for retaining a plurality of polishing fluid delivery tubes. Each of the tubes are disposed through one of the holes and coupled to the arm. The number of holes exceeds the number of tubes, thereby allowing the distribution of polishing fluid to a polishing surface and correspondingly the local polishing rates across a diameter of a substrate being polished to be controlled.

Abstract: Exemplary methods, systems and apparatus are provided for accomplishing mixing of chemistries, such as those used in polishing materials used in semiconductor manufacturing. A manifold is provided that combines chemistries with a mixing element, for example, so that the stability of the chemical solution can be maintained so as to facilitate polishing. The mixing element can be oriented in a stationary position, or alternatively, it can be agitated.

Abstract: A fluid delivery apparatus and method for use in a chemical mechanical polishing system is provided. The delivery rate of a fluid onto a pad is controlled to reduce the consumption of the fluid. In general, the fluid flow may be varied between a relatively lower flow rate and a relatively higher flow rate or, alternatively, the flow may be periodically terminated. Fluid flow may be controlled by any combination of pumps, controllers, valves, or other regulator/fluid flow control member.

Abstract: A waste diversion system for diverting the effluent from a manufacturing process, such as polishing the surfaces of silicon wafers, has an electrically controlled diverter valve for receiving the effluent and diverting it either to a “dirty” output for waste treatment, or to a “clean” output for recycling or other treatment. To determine whether the effluent is “dirty” or “clean”, parameter sensors are located to sense particular parameters such as turbidity, conductivity, ORP, pH, or ion content, as desired. One sensor is located to sense the parameters of effluent flowing into the diverter valve; and the other sensor is located to sense the parameters (typically, the same parameters) of the flow from the “dirty” or waste side of the diverter valve. Only when both of the sensors indicate that the effluent is “clean” is a signal provided to the diverter valve to switch it to the clean output.

Abstract: A method of abrading a portion of a silicon substrate includes fluidizing abrasive particulate material with a first gas within a storage container, combining the gas fluidized abrasive particulate material with a stream of a second gas to provide a stream of the gas fluidized abrasive particulate material, and directing the stream of the gas fluidized abrasive particulate material at the silicon substrate to abrade the portion of the silicon substrate.

Abstract: The invention provides a method and an apparatus that prevent the accumulation of copper ions during CMP of copper lines by performing the CMP process at low temperatures and by maintaining this low temperature during the CMP process by adding a slurry that functions as a corrosion inhibitor.

Abstract: The present invention provides a chemical mechanical polishing slurry for use in removing a first substance from a surface of an article in preference to silicon nitride by chemical mechanical polishing. The chemical mechanical polishing slurry according to the invention includes an abrasive, an aqueous medium, and an organic polyol that does not dissociate protons, said organic polyol including a compound having at least three hydroxyl groups that are not dissociable in the aqueous medium, or a polymer formed from at least one monomer having at least three hydroxyl groups that are not dissociable in the aqueous medium. In the preferred embodiment, ceria particles are used as the abrasive and the organic polyol is selected from the group consisting of mannitol, sorbitol, mannose, xylitol, sorbose, sucrose, and dextrin. The chemical mechanical polishing slurry can further optionally include acids or bases for adjusting the pH within an effective range of from about 2 to about 12.

Abstract: A fluid delivery system is provided for delivering a fluid to a polishing surface of a chemical mechanical polishing tool. The system includes a polishing pad having a plurality of apertures, a plurality of layers having a network of grooves and a platen having an aperture. A fluid may be communicated to the aperture in the platen, through the grooves in the plurality of layers and finally through the plurality of apertures in the polishing pad. The size, position and number of apertures in the platen and the polishing pad and the size, position and number of grooves in each of the layers may be varied to control the distribution of fluid across the top surface of the polishing pad. Preferably, the distance a fluid must travel from the platen aperture through the grooves to any of the apertures in the polishing pad is substantially the same.

Abstract: A CMP slurry pumping system and method which uses the slurry pump inlet pressure as input to the pump controller, and the controller adjusts pump speed to account for variations in inlet pressure.

Abstract: The method and apparatus are provided for preparing a slurry for a CMP apparatus with which mixing accuracy for a slurry is improved and accurate measurement is automatically accomplished for H2O2 as a small amount of additive. A slurry preparation apparatus for a CMP apparatus comprises a tank for preparing the slurry, a stock solution feeder for the slurry which feeds a stock solution for the slurry into the tank, and a concentration measurement instrument located outside the tank, which is capable of measuring an additive concentration in the slurry in the tank. The concentration measurement instrument measures the additive concentration in the slurry in the tank, and the amount of the stock solution for the slurry to be supplied is controlled according to the measurements.

Abstract: In method and apparatus for supplying a slurry for a chemical mechanical polishing (CMP) process, a slurry pre-treatment is provided for minimizing the size of abrasive particles in the slurry. In the slurry supplying method, after applying acoustic energy to the slurry to de-agglomerate agglomerated abrasive particles within the slurry, any remaining oversized abrasive particles having a diameter greater than a reference size are filtered out from the slurry. The acoustic energy application step and the filtering step are repeatedly performed for a predetermined time period while circulating the slurry.

Abstract: The invention relates to a device for feeding blasting shots into the central area of a centrifugal wheel (1) in a shot blasting system via a feed pipe (3), whereby a distributing bushing (7) comprising a distributing opening (8) is provided in the central region thereof. An impeller (9) comprising discharge openings (11) rotates in the distributing bushing (7) together with the centrifugal wheel (1), wherein the shots which are to be accelerated enter in an axial direction, the feed pipe (3) for the shots discharges into the impeller (9) and is provided with a ring-shaped tongue (10) which protrudes into the impeller (9) in the region of the distributing opening (8).

Abstract: The present invention includes a platen having a plurality of concentric fluid-tight plenums for receiving fluids. One or more fluid delivery systems may be used to control the flow rate and composition of fluids communicated to the plenums. The top surface of the platen may have holes for allowing the fluids, once inside the plenums, to travel to the top surface of a polishing pad. By controlling the flow rate and composition of fluids, the material removal rate on the front surface of the wafer may also be controlled. The polishing pad is preferably orbited during the planarization process. A metrology instrument may be used for measuring the front surface of the wafer. Data regarding the measurements may be used by a computer to determine if different flow rates and/or composition of fluids should be used to compensate for nonuniform polishing of the wafer.

Abstract: An in-line oscillating device is essentially composed of an oscillating tank, an oscillating pipe, and an oscillating generator. The oscillating pipe is set in the oscillating tank and connects with a slurry pipe. The oscillating generator for generating ultrasonic waves is mounted on the oscillating tank. Furthermore, the oscillating tank is filled with a medium to transmit the ultrasonic waves generated by the oscillating generator to the oscillating pipe. The in-line oscillating device is suitable to be mounted on any location of the slurry pipe where oscillation is needed.

Abstract: A polishing apparatus includes a table on which a polishing target member is placed, and at least one nozzle which sprays a polishing solution to a surface of the polishing target member so as to form, by polishing, the surface of the polishing target member. The nozzle and the polishing target member move relative to each other, and an angle of the nozzle is changeable.

Abstract: In order to resolve problems of an increase in cost of transportation and vessels for polishing solutions to polish metal films, and of aging change of the polishing solutions, apparatus for preparing and mixing solutions of polishing materials without including abrasive are installed at a site the same as a site of polishing apparatus, an abrasive free slurry is supplied to the polishing apparatus and a metal film on a wiring substrate is polished to thereby form embedded metal wirings by which the cost of polishing metal can significantly be reduced and stability of the polishing solution is promoted.

Abstract: The present invention provides a polishing slurry reclamation system. In one embodiment, the polishing slurry reclamation system comprises a polishing apparatus having a polishing platen and a fluid delivery system positioned to deliver a slurry or a rinse to the polishing platen, a recovery drain adjacent the polishing platen, and a fluid diverter associated with the platen and configured to deflect a selected one of a slurry or rinse emanating from the polishing platen to the recovery drain.

Abstract: On-site blending and distribution of oxide abrasives with other constituents as used in semiconductor applications. Constituent blending is accomplished through weighing components individually into a blending tank. Some components may be added by injection or weight. Alternatively blends can be made to varying concentrations by passing the blended oxide solution in a closed circulation loop through a calibrated encapsulated torroid coil to measure electrical conductivity. The resulting conductivity output may be used to add one or more component.

Abstract: An apparatus for multiple component slurry distribution during semiconductor wafer polishing operations. Concurrent polishing pad conditioning is obtained by means of a novel polishing pad design where polishing pads are mounted in a cylindrical configuration as opposed to the conventional flat surface configuration. A polishing pad conditioner is provided to refurbish the polishing pad.

Abstract: A carrier head of a chemical mechanical polishing apparatus to apply and distribute a polishing slurry to a polishing pad. The retaining ring includes a trough and one or more channels to channel the polishing slurry to the polishing pad.

Abstract: A CMP slurry is formulated with an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal thereby minimizing overetching. The slurry may further include abrasive particles, inhibitors, pH adjusting agents, and combinations thereof.

Abstract: A pure water reusing system recovers water discharged from apparatuses in which pure water is used, and regenerates the water to produce pure water. The pure water reusing system has a recovering and regenerating apparatus for recovering water discharged from the apparatuses and regenerating the water by removing impurities from the water to produce pure water, and a regenerated pure water supply line for supplying the regenerated pure water to at least one of the apparatuses. The same process is conducted in the apparatuses in which pure water is used.

Abstract: A self-cleaning apparatus for use in a chemical mechanical polishing tool. The apparatus includes a slurry-dispensing arm with a first end suspended over a polishing pad, and a second end for mounting to the chemical mechanical polishing tool. A slurry-dispensing nozzle is positioned under the first end for dispensing a polishing slurry against the polishing pad. The first end has a compound slanted top surface, a front face and adjoining side surfaces. The compound slanted top surface forms a longitudinal peak slanting from center to both sides and from the back end to the front face. The top surface of the first end has a liquid distribution manifold that is mounted distally from the front face and has a plurality of nozzles directed to spray deionized water to wash away slurry splatter from surfaces of the first end of the slurry dispensing arm during the water polishing cycle.

Abstract: A method for cutting a rare earth alloy according to the present invention includes the steps of: a) supplying slurry containing abrasive grains onto a wire; and b) machining the rare earth alloy with the abrasive grains, interposed between the wire and the rare earth alloy, by running and pressing the wire against the rare earth alloy. The slurry contains, as a main component, oil in which the abrasive grains are dispersed, and the viscosity of the slurry at 25° C. is in the range from 92 to 175 mPa·sec.

Abstract: A method for enhancing the material removal rate of an upper layer of a wafer in chemical mechanical planarization (CMP) systems is provided. The method includes applying radiation to an amount of slurry before the slurry is applied to the upper layer of the wafer. In one example, the method also includes providing a polishing pad and a carrier head configured to hold the wafer. The method further includes creating a mechanical polishing interface between the polishing pad, the upper layer of the wafer, and the radiation exposed slurry by bringing the polishing pad and the carrier head into contact.

Abstract: An apparatus and method for abrasive flow machining the orifice of a workpiece by using an abrasive media whereby the apparatus may accommodate abrasive media having a range of viscosities by modifying the diameters of pistons and cylinders in positive displacement pumps within the apparatus.

Abstract: A polishing apparatus includes a plurality of polishing fluid supply openings terminating in the polishing surface of a polishing table, and a plurality of grooves which are formed in the polishing surface and arranged so as not to be in direct communication with the polishing fluid supply openings. The polishing apparatus further includes a polishing fluid supply system for supplying a polishing fluid to the surface of the substrate through the openings. The grooves may extend at right angles so as to define a plurality of lands therebetween, and the polishing fluid supply openings are formed through the lands.

Abstract: A method for in-situ cleaning a polishing pad and a wafer surface simultaneously during copper chemical mechanical polishing and an apparatus for carrying out such method are disclosed. The method is carried out by dispensing an acid-containing solution onto a top surface of a polishing pad while the wafer is rotated against the polishing pad without any slurry solution being dispensed. The acid-containing solution may be advantageously formed by diluting an acid such as citric acid, HCOOH, CH3COOH, HNO3, H2SO4 and HF to a concentration of less than 10 wt. % acid, preferably less than 5 wt. % acid, and more preferably less than 1 wt. % acid. The acid-containing solution may be dispensed onto a top surface of the polishing pad for a time period between about 30 sec. and about 300 sec.

Abstract: Polishing compositions and tools for achieving polishing

Abstract: A chemical mechanical head includes a retaining ring to maintain a substrate beneath the mounting surface during polishing. The retaining ring has a lower portion with a bottom surface for contacting a polishing pad during polishing and made of a first material, such as plastic, and an upper portion made of a second, different material, such as metal.

Abstract: The electro-chemical machining apparatus of this invention is designed to smoothing a metal film by efficiently reducing initial rough surface and removing excessive metal film with reduced damages to the metal film. For this end, the electro-chemical machining apparatus performs electro-chemical machining of an object to be machined having a metal film on the surface to be machined. Such apparatus has a means for holding the object to be machined, a wiper for wiping the surface of the object to be machined, a means for supplying electrolytic solution onto the surface of the object to be machined, a first electrode disposed at a position opposed to the surface of the object to be machined, a second electrode disposed at a peripheral portion on the surface of the object to be machined, and a power supply for causing electrical current to flow between the second electrode on the surface of the object to be machined and the first electrode.

Abstract: A machine having a tool engages a workpiece to perform an operation includes a housing having an adapter secured thereto for supplying lubricating fluid. The adapter includes a split ring type mounting portion that engages the housing of the machine. The adapter further includes a lubrication conduit portion that is secured to or formed integrally with the mounting portion. The lubrication conduit portion has an inlet port formed therein that communicates with one or more outlet ports. When the mounting portion of the adapter is secured to the housing of the machine, the tool is located adjacent to the outlet ports of the adapter. A workpiece can then be engaged by the tool to perform the operation. A source of lubricating fluid is connected to the inlet port such that lubricating fluid can be sprayed from the outlet ports of the adapter directly into the region where the workpiece is engaged by the tool for reducing friction and heat during the operation.

Abstract: A method and apparatus for slurry distribution is provided. The apparatus for the distribution of slurry over a polishing pad surface used in chemical mechanical polishing includes a roller positioned over a polishing pad surface. The roller is connected with a gimbaling attachment to a positioning arm and is configured to apply a force against the polishing pad surface while maintaining a surface of the roller substantially parallel to the polishing pad surface. The gimbaled roller drives the slurry into and over the porous texture of the polishing pad surface and ensures a substantially even distribution of slurry. In another example, a double roller apparatus is also provided and is configured to combine slurry distribution and pad conditioning.

Abstract: A system and method for in-situ monitoring slurry flow rate during a chemical mechanical polishing process is provided. The present system comprises a chemical mechanical polishing apparatus with an impact pressure measuring device. The impact pressure measuring device serves in-situ monitoring of impact pressure generated by slurry at an outlet of slurry supply means. The flow rate of the slurry is controlled and adjusted in accordance with the measured impact pressure. The flow of the slurry is also ensured all through a chemical mechanical polishing process.

Abstract: A recirculation mechanism is used to force slurry toward the center of a platen used for chemical-mechanical polishing. The recirulator captures the slurry that would otherwise be flung from a rotating platen because of centrifugal force. The captured slurry is forced upwardly away from the surface of the platen and toward the center of the platen to recycle the slurry.

Abstract: A polishing method uses a dry particulate solids composition that is reconstituted into an aqueous composition for delivery to a polishing apparatus. In one aspect of the invention, the dry particulate solids composition is provided in a package size that is just substantially sufficient to make a reconstituted slurry for completing the polishing of a predetermined number of work pieces. The quantity of dry particulate solids delivered to a reconstitution apparatus can be an amount appropriate for polishing one work piece or a small number of work pieces, or the system can operate in larger batches or a continuous flow mode. The reconstituted aqueous polishing solution can be monitored for physical or chemical properties, filtered, blended with other chemical mixtures, or modified in other ways prior to being used in the polishing apparatus.

Abstract: A polishing pad platen that is equipped with a guard ring, or a slurry retaining collar, used in chemical mechanical polishing (CMP) for conserving usage of polishing slurry is described. A method for conserving slurry solution during a CMP process is further described. In the novel polishing pad platen, a guard ring is mounted to the platen by sealiningly engaging an outer periphery of the platen for preventing spilling out of slurry solution during a polishing operation. The guard ring is mounted to slidingly engage the platen in such a way that the ring may be lowered to be completely out of the way during a pad condition process in which the spinning out of a pad conditioning solution from a top surface of the polishing pad is necessary.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing section for polishing a surface of a workpiece, a cleaning section for cleaning the workpiece which has been polished, a first liquid leakage sensor provided in the polishing section for detecting a liquid leakage which occurs in the polishing section, and a second liquid leakage sensor provided in the cleaning section for detecting a liquid leakage which occurs in the cleaning section. The polishing apparatus further includes a controlling device for stopping the supply of liquid to the polishing section or the cleaning section in which the liquid leakage occurs when either one of the first and second liquid leakage sensors detects the liquid leakage.