Abstract: A method and apparatus of in situ monitoring and dispersing unwanted particles in slurry used during CMP polishing. The method includes providing a slurry path, applying to the slurry path a microcavitation field of a first level to detect particles of a predetermined size, applying to the slurry path a microcavitation field of a second level that is capable of dispersing said particles, and after the second applying step, feeding the slurry to a CMP polishing unit. Particle size may be detected and/or the microcavitation field strength may be set according to particle size. In addition, field strength may be calibrated according to levels determined by polystyrene control particles of a known size and/or concentration. A single or dual transducer may apply the microcavitation.

Abstract: The abrasive machine of the present invention is capable of changing pressure applied to a work piece and easily defining optimum abrading conditions. The abrasive machine comprises: a pressure vessel capable of increasing and reducing inner pressure; an abrasive plate provided in the pressure vessel; a pressing plate provided on the abrasive plate, the pressing plate pressing the work piece onto the abrasive plate; a driving unit relatively moving the abrasive plate with respect to the pressing plate so as to abrade the work piece; and a pressure source connected to the pressure vessel, the pressure source increasing or reducing the inner pressure of the pressure vessel.

Abstract: A semiconductor wafer is wetted with slurry by injecting the slurry into at least one channel which is provided in a wear ring, while the wear ring is holding the wafer and is pressed against a polishing pad. Preferably, the channel in the wear ring includes a plurality of outlets, and the outlets provide that the slurry can exit the wear ring and contact the polishing pad. Providing that the wear ring includes at least one channel and that slurry is injected into the channel during the polishing process provides that slurry is introduced between the wear ring and the polishing pad and this greatly increases the amount of slurry getting to the wafer.

Abstract: A low defectivity colloidal silica-based product slurry for use in chemical mechanical planarization (CMP) and an associated production method are described. The product slurry is produced using centrifugation of and optionally with addition of a surfactant to a starting colloidal silica (which can be a commercially available colloidal silica). The product slurry has substantially lower levels of soluble polymeric silicates than does the starting colloidal silica and affords lower defectivity levels when used in a slurry for CMP processing than does the starting colloidal silica.

Abstract: A liquid suspension for planarizing an outer surface of a material comprises a liquid suspension medium of a specific liquid density; and a plurality of solid, contact-sensitive abrasive particles of a constant solid density and suspended in the liquid suspension medium. The liquid and solid densities are approximately the same so that the abrasive particles freely and stably suspend in the liquid suspension medium, without gravitational separation by settling down or floating up. In this way, damaging contacts of the solid abrasive particles with one another are minimized.

Abstract: A pad conditioning system for conditioning a polishing pad in conjunction with polishing of a workpiece includes a pad conditioning head coupled with a positioning unit. The pad conditioning head includes a conditioning surface that is configured to be moved into contact with a polishing pad to condition the polishing pad. The pad conditioning system also includes a polishing liquid supply port disposed in the conditioning surface. The polishing liquid supply port is configured to selectively discharge polishing liquid during the conditioning operation. The discharged polishing liquid is worked into the polishing pad by the pad conditioning head during the conditioning operation. A workpiece, such as a semiconductor wafer, that is also moved into contact with the polishing pad is polished using the discharged polishing liquid.

Abstract: A pad conditioning system for conditioning a polishing pad in conjunction with a workpiece polishing operation includes a pad conditioning head coupled with a positioning unit. The pad conditioning head includes a plurality of abrasive particles protruding from a surface of the pad conditioning head. The positioning unit is configured to move the surface into contact with a polishing pad. The pad conditioning system also includes a liquid supply nozzle. The liquid supply nozzle is configured to selectively discharge liquid proximate to the abrasive particles that are in contact with the polishing pad to minimize frictional wear of the abrasive particles.

Abstract: Methods for dispensing slurry in a linear chemical mechanical planarization (CMP) system are provided. One method involves the use of a pulsing flow of slurry instead of a continuous flow of slurry. Another method involves spraying a mist of slurry onto the polishing pad. Yet another method involves controlling the gap between the nozzles from which the slurry is dispensed and the top surface of the polishing pad. Each of these methods reduces the amount of slurry used during a CMP operation.

Abstract: A method and apparatus for cleaning a web-based chemical-mechanical planarization (CMP) system. Specifically, a fluid spray bar is coupled to a frame assembly which may be mounted on a CMP system. The fluid spray bar will move along the frame assembly. As the fluid spray bar traverses the length of the frame assembly, a cleaning fluid is sprayed onto the web in order to clean the web between planarization cycles.

Abstract: A method and apparatus for controlling the coherence of a high-pressure fluid jet directed toward a selected surface. In one embodiment, the coherence is controlled by manipulating a turbulence level of the fluid forming the fluid jet. The turbulence level can be manipulated upstream or downstream of a nozzle orifice through which the fluid passes. For example, in one embodiment, the fluid is a first fluid and a secondary fluid is entrained with the first fluid. The resulting fluid jet, which includes both the primary and secondary fluids, can be directed toward the selected surface so as to cut, mill, roughen, peen, or otherwise treat the selected surface. The characteristics of the secondary fluid can be selected to either increase or decrease the coherence of the fluid jet. In other embodiments, turbulence generators, such as inverted conical channels, upstream orifices, protrusions and other devices can be positioned upstream of the nozzle orifice to control the coherence of the resulting fluid jet.

Abstract: An abrading plate has a self-stopping capability such that when an object, such as a semiconductor wafer having a device structure that includes raised regions and depressed regions fabricated on the surface, is being polished, the raised regions are removed and polishing stops automatically. The abrading plate, to produce a flat and mirror polished surface on the an object, has abrasive particles having a chemical purity of not less than 90% and a particle size of not more than two micrometers, a binder material, and a given volume of porosity. A ratio of the abrasive particles and the binder material is not less than 1:0.5 by volume, and proportions of abrasive particles, a binder material and porosity are, respectively, not less than 10%, not more than 60% and 10-40% by volume. A surface is polished for a given duration with a liquid not containing abrasive particles so as to eliminate the raised regions and to obtain a flat surface.

Abstract: A planarizing slurry for mechanical and/or chemical-mechanical polishing of microfeature workpieces. In one embodiment, the planarizing slurry comprises a liquid solution and a plurality of abrasive elements mixed in the liquid solution. The abrasive elements comprise a matrix material having a first hardness and a plurality of abrasive particles at least partially surrounded by the matrix material. The abrasive particles can have a second hardness independent of the first hardness of the matrix material. The second hardness, for example, can be greater than the first hardness. The matrix material can be formed into a core having an exterior surface and an interior. Because the abrasive particles are at least partially surrounded by the matrix material, the abrasive particles are at least partially embedded into the interior of the core.

Abstract: A polishing fluid delivery apparatus has been provided that in one embodiment includes a support member, a dispense arm, a polishing fluid delivery tube and a variable restricting device. The dispense arm extends from an upper portion of the support member and has an outlet of the delivery tube coupled thereto. The restricting device interfaces with the delivery tube and is adapted to provide a variable restriction to flow passing through the delivery tube. In another embodiment, the restricting device is a pinch valve and the tube in continuous from the outlet to beyond a portion that interfaces with the pinch valve. In yet another embodiment, the position of the delivery arm is controllable.

Abstract: A method for enhancing uniformity in the polishing profile of a substrate during chemical mechanical polishing. According to a first embodiment, the method is adapted for a rotary-type chemical mechanical polisher and includes dispensing the polishing slurry onto the rotating polishing pad of the CMP apparatus in a polishing area on the polishing pad that contacts the entire surface area of the substrate. This facilitates substantially equal polishing rates and a substantially uniform polishing profile from the center to the edge regions on the surface of the substrate. According to a second embodiment, the method of the present invention is adapted for a linear-type chemical mechanical polisher and includes increasing the number of nozzles that dispense the slurry onto the polishing pad across the diameter or width of the substrate.

Abstract: A slurry recycling method comprising the steps of: separating a spent slurry containing silicon dust resulting from slicing of a silicon ingot in the presence of a slurry composed of abrasive grains and a dispersion medium in which the abrasive grains are dispersed, into a dispersion mainly containing the abrasive grains and a dispersion mainly containing the silicon dust; recovering the dispersion medium by centrifuging and/or distilling the dispersion mainly containing the silicon dust; and reproducing a slurry using abrasive grains or the dispersion mainly containing abrasive grains, and the recovered dispersion medium.

Abstract: The present invention relates to methods and apparatus that allow for chemical mechanical polishing using a flexible pad and variable fluid flow for variable polishing.

Abstract: In the grinding process, grinding fluid is supplied toward the grinding point where a workpiece is ground with a grinding wheel. At the same time, a fluid jet is ejected across the air flow above the grinding point in the rotational direction of the grinding wheel. As a result, the air layers on both lateral sides of the grinding wheel are turned not to head for the grinding point above the same, whereby the grinding fluid is reliably led to the grinding point without being obstructed by the air layers following both lateral sides of the grinding wheel.

Abstract: A computer-controlled slurry supplying apparatus for providing abrasive slurry to a chemical mechanical polishing (CMP) machine in a semiconductor manufacturing process preferably comprises a storage portion for accepting and storing a quantity of undiluted slurry, a mixing portion for accepting undiluted slurry from the storage portion and mixing with a diluting solution to created a diluted slurry, a supply portion for holding the diluted slurry, and at least one point-of-use mixing unit for mixing at least one chemical additive to the diluted slurry at or near a dispensing nozzle at the point of application. Each of the above portions of the slurry supplying apparatus further includes a re-circulation means for keep solutions in a mixed and agitated state. A method for using the slurry supplying apparatus comprises steps of controllably operating various valves, pumps, and sensors to maintain a desired slurry composition and flow rate.

Abstract: An apparatus for polishing a wafer comprising a rotatable polishing pad having a center of rotation and a rinse delivery conduit positioned adjacent to the polishing pad and substantially in radial alignment with the center. The rinse delivery conduit includes a plurality of nozzles to dispense a rinsing liquid. In one embodiment, the plurality of nozzles are configured and positioned to generate a higher flow rate of the rinsing liquid at the end of the rinse delivery conduit proximate to the center than at the end of the rinse delivery conduit distal to the center. In another embodiment, the rinse delivery conduit has a proximal end which is substantially adjacent the center and the distal end which is approximately adjacent an outer periphery of the pad.

Abstract: Chemical mechanical polishing (CMP) equipment for use in planarizing a semiconductor wafer prevents slurry from being deposited on the surfaces of respective components of the equipment. The CMP equipment includes a turntable, a polishing pad mounted to the table so as to rotate with the table, a slurry supply unit for dispensing slurry onto the polishing pad, a polishing head unit for pressing a wafer downward atop the polishing pad, a conditioning unit for scoring the pad to maintain the surface of the polishing pad uniform, and a cleaning fluid supply unit. The cleaning solution supply unit has at least one spray nozzle by which cleaning solution is sprayed onto the polishing pad and respective components of the CMP equipment.

Abstract: A liquid dispense manifold having drip nozzles configured to form controlled droplets is provided for use in chemical-mechanical polisher (CMP) systems. The liquid dispense manifold includes a plurality of drip nozzles that are secured to the side of the liquid dispense manifold. Each of the plurality of drip nozzles has a passage defined between a first end and a second end. A bend is defined within the drip nozzle passage such that droplets are directed downward toward a polishing surface. The nozzles are configured with respect to the manifold to provide an even flow rate of substantially uniform drops onto the polishing surface.

Abstract: The invention provides a polishing composition comprising (i) an abrasive comprising (a) about 5 to about 45 wt. % of first abrasive particles having a Mohs' hardness of about 8 or more, (b) about 1 to about 45 wt. % of second abrasive particles having a three-dimensional structure comprising aggregates of smaller primary particles, and (c) about 10 to about 90 wt. % of third abrasive particles comprising silica, and (ii) a liquid carrier. The invention also provides a method of polishing a substrate, which method comprises the steps of (i) providing the above-described polishing composition, (ii) providing a substrate having a surface, and (iii) abrading at least a portion of the substrate surface with the polishing composition to polish the substrate.

Abstract: A polishing pad conditioner for a chemical-mechanical polishing apparatus includes a conditioning plate having a first recess and a holder having a second recess. The first recess is formed on the upper face of the conditioning plate, and the second recess is formed on the bottom face of the holder. A first filling member having a specific gravity smaller than that of the conditioning plate fills up the first recess, and a second filling member having a specific gravity smaller than that of the holder fills up the second recess. Therefore, the weight of the polishing pad conditioner can be reduced, and the durability and service life of an air bladder that adjusts the height of the polishing pad conditioner can be improved.

Abstract: A conductive polishing pad that includes one or more anodes and one or more cathodes formed at or near the polishing surface of a polishing pad. The anodes and cathodes are connected to a wiring network that is part of an electrical connector system that allows for a current source to be connected to the polishing pad and provide a current to the anodes and cathodes even if the polishing pad is moving relative to the current source. An electrolytic polishing fluid introduced between the polishing surface and the metal layer of a wafer forms an electrical circuit between the anode, cathode and the metal layer. The conductive polishing pad allows for electrochemical mechanical polishing (ECMP) to be performed on a conventional chemical mechanical polishing (CMP) tool.

Abstract: Various embodiments of a semiconductor processing fluid delivery system and a method delivering a semiconductor processing fluid are provided. In aspect, a system for delivering a liquid for performing a process is provided that includes a first flow controller that has a first fluid input coupled to a first source of fluid and a second flow controller that has a second fluid input coupled to a second source of fluid. A controller is provided for generating an output signal to and thereby controlling discharges from the first and second flow controllers. A variable resistor is coupled between an output of the controller and an input of the second flow controller whereby the output signal of the controller and the resistance of the variable resistor may be selected to selectively control discharge of fluid from the first and second flow controllers.

Abstract: A CMP slurry pumping system and method which uses the slurry pump inlet pressure as input to the pump controller, and the controller adjusts pump speed to account for variations in inlet pressure.

Abstract: A method and apparatus for controlling the coherence of a high-pressure fluid jet directed toward a selected surface. In one embodiment, the coherence is controlled by manipulating a turbulence level of the fluid forming the fluid jet. The turbulence level can be manipulated upstream or downstream of a nozzle orifice through which the fluid passes. For example, in one embodiment, the fluid is a first fluid and a secondary fluid is entrained with the first fluid. The resulting fluid jet, which includes both the primary and secondary fluids, can be directed toward the selected surface so as to cut, mill, roughen, peen, or otherwise treat the selected surface. The characteristics of the secondary fluid can be selected to either increase or decrease the coherence of the fluid jet. In other embodiments, turbulence generators, such as inverted conical channels, upstream orifices, protrusions and other devices can be positioned upstream of the nozzle orifice to control the coherence of the resulting fluid jet.

Abstract: In a first aspect of the invention, a polishing device is provided. The polishing device includes a platen adapted to support a polishing pad and also includes a source of polishing slurry. Also included in the polishing device is a slurry supply line adapted to supply the polishing slurry from the source of polishing slurry to the polishing pad. The polishing device includes a pressure transducer installed along the slurry supply line and adapted to detect a pressure inside the slurry supply line. Numerous other aspects are provided.

Abstract: A valve for a slurry outlet opening in an installation for chemical mechanical polishing, in particular of semiconductor wafers in DRAM production, includes an elastic diaphragm, which covers the slurry outlet opening and has at least one self-closing opening. It is possible for the opening to be moved into a feedthrough position for the slurry by flowing slurry and to be automatically moved into a blocking position for the slurry when the slurry is not flowing. A CMP installation having such a valve is also provided. This creates a simple way of preventing particle agglomerations in the region of the fluid outlet opening of a CMP installation.

Abstract: An apparatus for polishing a wafer includes a polishing station having a platen on which a polishing pad is installed, a polishing head having a membrane that contacts a surface of the wafer, the membrane securing the wafer and pressuring the wafer against the polishing pad, wherein the polishing station includes a transfer stage for loading the wafer on or unloading the wafer from the polishing head, and wherein the transfer stage includes a pedestal on which the wafer is placed and a fluid supply part for supplying a fluid into a boundary region between the wafer and the membrane to reduce a surface tension between the wafer and the membrane. Preferably, the apparatus further includes a stopper for preventing the wafer placed on the pedestal from being lifted up along with the membrane when the wafer is unloaded from the polishing head onto the pedestal.

Abstract: A chemical-mechanical polishing (CMP) system and method includes pumping polishing slurry from a CMP apparatus through a sampling tube to an endpoint detection apparatus during a polishing operation, and flushing the sampling tube while a polishing operation is not in progress. The flushing of the sampling tube is commenced in accordance with a control signal from the endpoint detection apparatus terminating the polishing operation; the flushing is terminated in accordance with a starting signal to the CMP apparatus. The pump, which pumps a sample of slurry into the endpoint detection apparatus, continuously pumps slurry and/or water. Clogging of the slurry sampling tube is thus eliminated, thereby ensuring robust operation of the CMP apparatus. Contamination of the sampling tube is also avoided, so that the system may reliably provide sensitive endpoint detection and process control, even when a film of low pattern density is polished.

Abstract: In a mechanochemical polishing apparatus, a SiC wafer is held on a wafer holding table. The surface of the wafer to be polished is pressed against a polishing cloth applied to a polishing platen with a predetermined processing pressure. The wafer holding table and polishing platen are then rotated to perform polishing with chemical liquid dropped on the polishing cloth. The chemical liquid includes chromium (III) oxide as abrasive grains and hydrogen peroxide water (oxidizing agent) for improving polishing efficiency.

Abstract: Machines with solution dispensers and methods of using such machines for chemical-mechanical planarization and/or electrochemical-mechanical planarization/deposition of microelectronic workpieces. One embodiment of such a machine includes a table having a support surface, a processing pad on the support surface, and a carrier assembly having a head configured to hold a microelectronic workpiece. The carrier assembly can further include a drive assembly that manipulates the head. The machine can also include a solution dispenser separate from the head. The solution dispenser can include a support extending over the pad and a fluid discharge unit or distributor carried by the support. The fluid discharge unit is configured to discharge a planarizing solution onto a plurality of separate locations across the pad.

Abstract: A lens-holding shaft 41 displaces a lens 1 towards a main rotating tool 50 for processing the peripheral portion of the lens 1. A long hole 115 penetrating a waterproof case 101 is formed in the waterproof case 101 along the locus of displacement of the lens-holding shaft 41 and the lens-holding shaft is inserted through the long hole 115. At the outside of the waterproof case 101 along the long hole 115, a flexible water-resistant sliding shutter 130 is disposed in a manner such that the sliding shutter 130 can be freely displaced. The sliding shutter 130 is connected with the lens-holding shaft 41. A guide member 150 containing the sliding shutter 130 is bent at a position before the main shaft 51.

Abstract: An apparatus and method for drawing a sample of a chemical-mechanical polishing slurry for analysis of at least one property, e.g., particle size distribution, is described.

Abstract: A CMP pad conditioning unit having a new and improved drive transmission for transmitting rotation from a drive motor to a conditioning disk on the pad conditioning unit. The drive transmission includes a rotatable transmission shaft that is drivingly engaged by the drive motor and drivingly engages the conditioning disk. In operation, rotation is transmitted from the drive motor to the conditioning disk through the transmission shaft. The drive transmission is characterized by reliability, longevity and enhanced efficiency in the conditioning of substrate polishing pads.

Abstract: A method and system is disclosed for reducing slurry usage in a chemical mechanical polishing operation utilizing at least one polishing pad thereof. Slurry can be intermittently supplied to a chemical mechanical polishing device. The slurry is generally flushed so that a portion of said slurry is trapped in a plurality of pores of at least one polishing pad associated with said chemical mechanical polishing device, wherein only a minimum amount of said slurry necessary is utilized to perform said chemical mechanical polishing operation, thereby reducing slurry usage and maintaining a consistent level of slurry removal rate performance and a decrease in particle defects thereof. The present invention thus discloses a method and system for intermittently delivering slurry to a chemical mechanical polishing device in a manner that significantly conserves slurry usage.

Abstract: The present invention is directed to an apparatus and method for flow regulation of planarization fluids to a semiconductor wafer planarization machine. In one embodiment, the regulating system includes a fluid storage tank with an acoustic fluid level sensor. The storage tank is connected to a fluid delivery line that delivers planarization fluid to the storage tank through a flow control valve and delivers a regulated flow of planarization fluid to a planarization machine through a flow sensor. A gas supply system is connected to the storage tank to provide system pressurization. Regulation of the fluid flow is achieved by a control system in which the flow sensor and the acoustic fluid level sensor comprise feedback elements in a closed feedback system to independently control the pressure in the storage tank and the fluid admitted by the control valve. In an alternate embodiment, the fluid level sensor is comprised of capacitive proximity sensors located outside the wall of the storage tank.

Abstract: A method and apparatus for controlling the coherence of a high-pressure fluid jet directed toward a selected surface. In one embodiment, the coherence is controlled by manipulating a turbulence level of the fluid forming the fluid jet. The turbulence level can be manipulated upstream or downstream of a nozzle orifice through which the fluid passes. For example, in one embodiment, the fluid is a first fluid and a secondary fluid is entrained with the first fluid. The resulting fluid jet, which includes both the primary and secondary fluids, can be directed toward the selected surface so as to cut, mill, roughen, peen, or otherwise treat the selected surface. The characteristics of the secondary fluid can be selected to either increase or decrease the coherence of the fluid jet. In other embodiments, turbulence generators, such as inverted conical channels, upstream orifices, protrusions and other devices can be positioned upstream of the nozzle orifice to control the coherence of the resulting fluid jet.

Abstract: A method and apparatus for controlling the coherence of a high-pressure fluid jet directed toward a selected surface. In one embodiment, the coherence is controlled by manipulating a turbulence level of the fluid forming the fluid jet. The turbulence level can be manipulated upstream or downstream of a nozzle orifice through which the fluid passes. For example, in one embodiment, the fluid is a first fluid and a secondary fluid is entrained with the first fluid. The resulting fluid jet, which includes both the primary and secondary fluids, can be directed toward the selected surface so as to cut, mill, roughen, peen, or otherwise treat the selected surface. The characteristics of the secondary fluid can be selected to either increase or decrease the coherence of the fluid jet. In other embodiments, turbulence generators, such as inverted conical channels, upstream orifices, protrusions and other devices can be positioned upstream of the nozzle orifice to control the coherence of the resulting fluid jet.

Abstract: In the cutting solution supplying and controlling apparatus for a dicing machine, a flow rate adjusting device is provided in addition to a regulator as the pressure adjusting device. The flow rate adjusting device has a flow rate controller, which controls a proportional solenoid valve according to a signal applied from a flow rate sensor as a feedback signal. Thus, even if the pressure of the water supplied from the water supply equipment of the factory changes, the flow rates of the cutting solution and the coolant are maintained. Moreover, the flow rates can be easily adjusted according to the type of work to be processed.

Abstract: An in-line oscillating device is essentially composed of an oscillating tank, an oscillating pipe, and an oscillating generator. The oscillating pipe is set in the oscillating tank and connects with a slurry pipe. The oscillating generator for generating ultrasonic waves is mounted on the oscillating tank. Furthermore, the oscillating tank is filled with a medium to transmit the ultrasonic waves generated by the oscillating generator to the oscillating pipe. The in-line oscillating device is suitable to be mounted on any location of the slurry pipe where oscillation is needed.

Abstract: According to one embodiment, a method of planarizing of a surface of a semiconductor substrate is provided. A copper layer is inlaid in a dielectric layer of the substrate. The semiconductor substrate is disposed opposite to a polishing pad and relative movement provided between the pad and the substrate. An electrolytic slurry containing abrasive particles is flowed over the substrate or the pad. A voltage is applied between the polishing pad and the substrate to perform electropolishing of the substrate. The rate of chemical mechanical polishing is controlled by the down force applied to a polishing head urging the substrate against the polishing pad.

Abstract: A method and system for monitoring the quality of a slurry utilized in a chemical mechanical polishing operation. A slurry is generally delivered through a tubular path during a chemical mechanical polishing operation. A laser light is generally transmitted from a laser light source, such that the laser light comes into contact with the slurry during the chemical mechanical polishing operation. The laser light can then be detected, after the laser light comes into contact with the slurry to thereby monitor the quality of the slurry utilized during the chemical mechanical polishing operation. The laser light that comes into contact with the slurry can be also be utilized to monitor a mixing ratio associated with the slurry.

Abstract: A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.

Abstract: An abrasive liquid feed apparatus comprises a supply tank for storing an abrasive liquid having a predetermined concentration, an abrasive liquid pipe for transferring the abrasive liquid from the tank to a polishing means and an additive feed means which feeds an additive having a predetermined concentration to the tank. It further comprises an additive concentration measurement means which measures a concentration of the additive in the abrasive liquid in the supply tank, a measurement means which measures an amount of the abrasive liquid in the tank and a control which calculates an amount of the additive to be supplemented to the tank, based on the concentration of the additive measured by the additive concentration measurement means and the amount of the abrasive liquid measured by the metering means. To maintain the concentration of aqueous hydrogen peroxide in the abrasive liquid.

Abstract: Disclosed is a polishing system used for polishing a surface to be polished of an object to be polished by a polishing pad, which is capable of improving uniformity of the surface to be polished of the object to be polished by positively, accurately adjusting a polishing pressure, and a polishing method using the polishing system. Concretely, the surface to be polished of a wafer as the object to be polished is polished by relatively moving, along a plane, a polishing surface of the rotating polishing pad and the surface to be polished of the wafer in slide-contact with each other, and adjusting a pressing force applied from the polishing pad to the wafer in accordance with a polishing pressure previously set depending on a relative-positional relationship between the polishing surface of the polishing pad and the surface to be polished of the wafer.

Abstract: A slurry homogenizer. A frame having an outlet is disposed on a driving means having a rotating shaft. A waterproof plate having a first opening is disposed in the frame and on the driving means. Part of the shaft penetrates the first opening. A filter is disposed in the frame and on the plate. A first grinding pad has a second opening and is fitted on the shaft through the second opening. The first grinding pad is disposed in the frame and above the plate. A knob is fitted on the top of the shaft. The knob fixes the first grinding pad on the shaft. A cover having a pipe is disposed on the frame. A second grinding pad having a third opening is fitted on the pipe and disposed in the frame. The second grinding pad and the first grinding pad are separated by a fixed distance.

Abstract: The present invention describes a chemical solution recycling apparatus in a spin etching and cleaning process chamber for manufacturing semiconductor devices. Modification of the exterior dimension and the main structure of the process chamber is not necessary. The recycling apparatus in accordance with the present invention may separate different chemical solutions into different vessels and recycle them thereafter. The recycling apparatus comprises a recycling ring moving up and down to collect the solution and a recycling circular tray for sorting the chemical solutions in different trenches and drains. Therefore, the chemical solutions may be collected by assigned vessels or may be recycled into the process chamber after necessary quality inspections.

Abstract: Apparatus for producing a polishing solution composed of pure water and abrasive grains, the apparatus including a preparation tank to prepare a polishing solution containing abrasive grains at a predetermined concentration, by mixing an abrasive grain-containing slurry and pure water, and a circulation device for circulating the thus prepared polishing solution to keep the solution in a suspended state. The circulation device includes a circulation conduit and a flow-controllable bypass conduit fluidly associated with the circulation conduit providing a constant flow rate and having a light-extinction type particle detector for monitoring the polishing solution so as to detect large abrasive grains having a particle size not less than a predetermined value and measure the number of the large abrasive grains.