Abstract: A method for manufacturing a mirror surface tube for a photosensitive drum of a copying machine or the like, by which an external surface of an aluminium or aluminium alloy tube can be mirror-processed with high accuracy without surface defects, and in such a way that good quality required for a photosensitive drum is ensured and dimension accuracy, such as roundness, and production yield is improved involves a first step in which an aluminium or aluminium alloy tube, finished in a predetermined shape and dimension with surface roughness of 10 microns or less, is processed by a centerless grinding process. Then, in a second step, a grinding process is performed using an electrolytic integrated polishing apparatus including a tool electrode mechanism having an elastic grindstone so as to make a mirror surface tube having the surface roughness of 2.0 microns or less. Further, preferably, in a third stage, a roller burnishing process is performed to finish the tube to a surface roughness of 0.5 microns or less.

Abstract: The present invention for a method and apparatus for detection of chemical mechanical planarization endpoint and device planarity comprises imparting at least one variation of an atomic mass of at least one material within the layer. The variation of the atomic mass within the layer is indicative of the layer thickness. The removal of the layer is monitored by detecting the variation in the atomic mass, and/or a change in concentration of the at least one material, during removal of the layer. Once the concentration of the material reaches a minimum threshold, or an atomic mass is detected at a minimum intensity, within a predetermined time duration, the removal of the layer is terminated. The variation in atomic mass, and/or concentration of materials within the layer is used to measure a planarity of the device.

Abstract: A substrate polishing system includes a delivery arm having a nozzle configured to combine a rinse fluid and a gas into an atomized spray, and to direct the atomized spray toward a polishing pad. The atomization process causes droplets of the rinse agent in the atomized spray to become negatively charged. The negative charge causes in the rinse agent to adhere to waste particles and slurry, which facilitates removal thereof from the polishing pad.

Abstract: A polishing apparatus that can effectively and efficiently remove potassium and other alkaline metals comprises integrally a polishing unit for polishing an object by means of a polishing agent and a cleaning unit for cleaning the polished object. The polishing unit and the cleaning unit have means for isolating the internal atmosphere from the external atmosphere and the cleaning unit has a means for cleaning the polished object by bringing hot pure water or steam of pure water into contact with the polished object. With a cleaning method hot pure water is brought into contact with the polished object without drying it after having been polished by such a polishing apparatus.

Abstract: A method of backgrinding wafers wherein backgrinding tape or a pad is applied to the chuck and not to the wafers. The backgrinding tape or pad is left on the chuck as each wafer is sequentially placed on the tape or pad, background, rinsed on the backside, removed from the tape and then cleaned on the front side and backside. A tool for applying tape to a chuck, as described herein, facilitates this method.

Abstract: A method of manufacturing a magnetic recording medium having a disc-shaped flexible slave medium accommodated in a case, onto which servo signals are effectively recorded by a magnetic transfer method with high quality. The method includes a slitting step for cutting an original sheet into discrete webs; a punching step for obtaining a disc-shaped slave medium; a thermo step for removing distortion; a burnishing step for smoothing a surface of the slave medium; a center core attachment step; a magnetic transfer step for performing a magnetic transfer while a master medium is allowed to be brought into close contact with one of the web and the slave medium; an assembly step for incorporating slave medium into the case; a cleaning step for cleaning a surface of the slave medium; a verifying step for checking the servo signals; and a packing step.

Abstract: An apparatus and method for refurbishing fixed-abrasive polishing pads. In one embodiment, a refurbishing device has an arm positionable over the planarizing surface of the polishing pad, a refurbishing element attached to one end of the arm, and an actuator connected to the other end of the arm. The refurbishing element has a non-abrasive contact medium engageable with the planarizing surface of the polishing pad that does not abrade or otherwise damage raised features on the fixed-abrasive pad under desired conditioning down forces. The actuator moves the arm downwardly and upwardly with respect to the planarizing surface to engage and disengage the non-abrasive contact medium with the planarizing surface of the polishing pad. The refurbishing device may also have a conditioning solution dispenser positionable proximate to the planarizing surface of the polishing pad to dispense a liquid conditioning solution onto the planarizing surface.

Abstract: A new method and sequence is provided for the polishing of the surface of a layer of metal containing copper. The invention provides for an improved method of residue removal. The invention improves the removal of slurry as part of the step of applying DIW by, during the step of applying DIW, raising the wafer carrier, thus allowing uninhibited removal of the slurry from the surface that is being polished.

Abstract: The method for making an optical lens according to the present invention is characterized in comprising: a optical lens preform fabrication step of fabricating a optical lens preform which comprises a first curved portion which serves as an optically functioning part and which is on one side, a flat surface portion which is formed on the opposite side to the first curved portion, and paired beveling surfaces which are formed on the both sides of the flat surface portion; a drawing step of drawing a optical lens preform 40 until the optical lens preform 40 has obtained a desired outer diameter; and an optical lens fabrication step of cutting thus drawn optical lens preform and accordingly fabricating an optical lens. With this making method, since there are paired beveling surfaces disposed, it is possible to suppress a drawing-induced distortion.

Abstract: To provide a gear having high strength and high dimension precision. A cut material is heated in an anti-oxidation atmosphere. Then, a form including gear teeth and having a nearly completed shape is formed from the upset material at one time by hot forging. The form undergoes gear grinding, whereby a finished product is obtained. The form has a curved surface previously formed at a corner along a tooth trace of a tooth flank.

Abstract: A method for cleaning residue of alignment marks on a CMP polished wafer. The method includes application of a strong acid or oxygen plasma to the wafer to remove the residue.

Abstract: An optical system is disclosed for the inspection of wafers during polishing which also includes a measurement system for measuring the thickness of the wafers top layer. The optical system views the wafer through a window and includes a gripping system, which places the wafer in a predetermined viewing location while maintaining the patterned surface completely under water. The optical system also includes a pull-down unit for pulling the measurement system slightly below the horizontal prior to the measurement and returns the measuring system to the horizontal afterwards.

Abstract: In the planarization apparatus, an etching stage is installed in a body where a rough grinding stage and a finishing grinding stage are disposed, and the rough grinding, finishing grinding, and etching of a wafer are performed in the same planarization apparatus. A chuck for holding the wafer is moved in an order through the rough grinding stage, the finishing grinding stage and the etching stage while keeping holding the wafer. When the chuck is positioned at the etching stage, the chuck is moved up toward an etching vessel and the wafer that is held by the chuck is housed in the etching vessel. In this state, etching solution is projected on the wafer from a nozzle and the wafer is etched.

Abstract: Disclosed herein is a holding device, which includes a volumetrically controllable material and a volume controller in operable communication with that material. The volume controller is configured to subject the material to a condition that causes a physical change in volume of the material without a change in mass of the material. The volumetric change causes the holding power. Further disclosed herein is a method for creating a lower than atmospheric pressure between a volumetrically controllable fixed mass material and a separate object. The method includes introducing to the material an increase condition calculated to volumetrically increase the material without changing the mass of the material. The separate object is then brought to contact the material following which a decrease condition calculated to volumetrically decrease the material without changing the mass of the material is introduced to the material.

Abstract: In one illustrative embodiment, the method comprises providing a plurality of wafer lots, each of the lots comprising a plurality of wafers, performing at least one process operation on at least some of the wafers in each of the plurality of lots, identifying processed wafers having similar characteristics, re-allocating the wafers to lots based upon the identified characteristics, and performing additional processing operations on the identified wafers having similar characteristics in the re-allocated lots. In one illustrative embodiment, the system comprises a first processing tool for performing processing operations on each of a plurality of wafers in each of a plurality of wafer lots, a controller for identifying processed wafers having similar characteristics and re-allocating the wafers to lots based upon the identified characteristics, and a second processing tool adapted to perform additional processing operations on the identified wafers having similar characteristics in the re-allocated lot.

Abstract: Waste water generated by processing a semiconductor is filtered to be cleaned. Removable matters trapped by a first filter film are used as a second filter film. Filtering capciity is maintained by applying an external force such as bubbles to the second filter film. When removable matters are mixed with the filtered water, the filtered water is recirculated again to the tank in which the waste water is stored, and after it is checked that a desired inclusion rate has been reached filtration is started again.

Abstract: The present invention relates to a method for determining rapidly and accurately the polishing time of a chemical mechanical polishing process for polishing target wafers to avoid any problems of under-polishing or over-polishing. An aspect of the present invention is directed to a method for determining a chemical mechanical polishing time for removing a target polishing thickness H from an uneven surface of a target wafer. The method comprises polishing a control wafer by a chemical mechanical polishing to obtain a progressive relationship of polishing thickness and respective polishing time therefor. A first polishing time T1 is determined for removing a first thickness H1 from the target wafer, in which the first thickness H1 with substantially the uneven surface removed is smaller than the target polishing thickness H of the target wafer to be removed.

Abstract: The invention includes a semiconductive processing method of electrochemical-mechanical removing at least some of a conductive material from over a surface of a semiconductor substrate. A cathode is provided at a first location of the wafer, and an anode is provided at a second location of the wafer. The conductive material is polished with the polishing pad polishing surface. The polishing occurs at a region of the conductive material and not at another region. The region where the polishing occurs is defined as a polishing operation location. The polishing operation location is displaced across the surface of the substrate from said second location of the substrate toward said first location of the substrate. The polishing operation location is not displaced from said first location toward said second location when the polishing operation location is between the first and second locations.

Abstract: A tool for abrading a workpiece to smooth the surface thereof. In one embodiment, the tool is an ultrasonic tip (12) having plural grooves (16) formed in a smooth surface (14) thereof. Each groove (16) includes an abrasive material (24) coating the depression thereof. Rough surface areas of a workpiece projecting into the groove (16) are abraded to thereby result in a smooth workpiece surface. Once the surface roughness of the workpiece has been removed, the smooth areas (14) of the ultrasonic tip (12) are engaged, thereby preventing further abrasion of the workpiece.

Abstract: A system and method are described for manufacturing a lapping plate. In one example, the lapping plate is made by covering a Tin-Antimony plate with photoresist and exposing the resulting photoresist layer with UV light through a wire mesh mask. After development, the non-etch areas can serve as land areas for diamond charging. Such a method may lead to fewer artifacts on the lapping plate and smaller diamond particle dimensions resulting in better processing of read/write heads, especially GMR heads.

Abstract: An abrasive article backup plate assembly and grinder system having an abrasive article backup plate assembly is disclosed. The abrasive article backup plate assembly includes an abrasive article having an abrasive surface that includes a viewing window within the abrasive surface. A support member is provided including a first major surface which supports the abrasive article. At least a portion of the support member is made of materials sufficiently clear to collectively see through the support member and the viewing window. A method of abrading a surface using a grinder system including the abrasive article backup plate assembly is also disclosed.

Abstract: Embodiments of the invention include methods and apparatus for electrodialytic polishing of various layers formed on semiconductor substrates. In certain embodiments the use of electrodialytic processes in conjunction with chemical mechanical forces to achieve a copper interconnect with a desired level of planarity and process performance. In certain embodiments electrodialytic polishing uses an electrodialytic polish pad, which is an active pad which has copper binding groups provided in its core structure and has an added capability of allowing electrical conductivity. An electrodialytic polish pad allows transfer of cations or anions through a membrane in the presence of an electric field and into a cathodic electrolyte. Under the influence of an electric field the electrodialytic polish pad and/or electrodialytic pads are continuously refreshed to bind cations.

Abstract: A method of manufacturing a perforated metal cover (1) includes steps of: step (60), successively punching holes in a piece of metal sheet at a plurality of workstations and cutting the metal sheet into a plurality of metal bases; step (62), stamping the metal bases into three dimensions; step (64), grinding the metal bases; and step (66), anodizing the metal bases to produce the finished covers. Each workstation includes at least one punch, and each punch includes a die having a plurality of punch heads, which number and arrangement are predetermined according to the holes (3) to be formed in the perforated cover. Different arrays of holes are punched in the metal sheet in different punches.

Abstract: A half toroidal CVT disk having an inner surface portion, an outer surface portion and a toroidal surface having a given machining allowance is centered with said inner surface portion worked prior to the heat treatment of said half toroidal CVT disk as the standard thereof, and then is chucked by a chuck mechanism. The toroidal surface of the chucked half toroidal CVT disk is ground by a grinding mechanism with the grinding wheel for grinding the half toroidal CVT disk in a state that one of said half toroidal CVT disk and said tool is inclined at a given angle with respect to the other.

Abstract: A method of removing the damaged surface layer beneath a coating on a component. The method includes evaluating the component to assess the depth of the damaged substrate layer, followed by sensing a plurality of points over the outer surface of the component to determine a three-dimensional outer surface profile thereof. A three-dimensional grinding profile beneath the outer surface profile is then established based on the depth of the damaged substrate layer beneath the outer surface profile. The component is then ground along the grinding profile such that the damaged substrate layer is substantially removed without significantly removing an undamaged region of the substrate beneath the damaged substrate layer.

Abstract: A semiconductor device washing apparatus washes a surface of a semiconductor wafer after a chemical mechanical polishing process is performed for the surface. A roll brush is placed on the surface of the semiconductor wafer so as to contact with the surface. A first chemical liquid tank contains first chemical liquid. A first exhaust nozzle sprays the first chemical liquid onto the surface of the semiconductor wafer. A second chemical liquid tank contains second chemical liquid. A second exhaust nozzle sprays the second chemical liquid onto the surface of the semiconductor wafer. The first chemical liquid and the second chemical liquid are splayed onto the surface of the semiconductor wafer on the condition that the roll brush and the semiconductor wafer are rotated.

Abstract: The present invention provides for a new and improved method of aqueous and cryogenic enhanced (ACE) cleaning for semiconductor surfaces as well as the surfaces of metals, dielectric films particularly hydrophobic low k dielectric films, and CMP etch stop films to remove post-CMP contaminants. It is particularly useful for removing contaminants which are 0.3 &mgr;m in size or smaller. The ACE cleaning process is applied to a surface which has undergone chemical-mechanical polishing (CMP). It includes the steps of cleaning the surface with an aqueous-based cleaning process, at least partially drying the surface, and, shortly thereafter, cleaning the surface with a CO2 cryogenic cleaning process. This process removes such contaminants from surfaces which are hydrophobic and hence difficult to clean with aqueous-based cleaning techniques alone.

Abstract: In a wafer surface protection method, a protective film is formed on a front surface of a wafer before the wafer performs a potentially wafer process. The protective film is a non-adhesive layer. An adhesive tape is adhered onto the protective film before conducting the polluting process. After the polluting process is completed, the adhesive tape is removed along with the protective film. As a result, no adhesive residues remain on the surface of the wafer.

Abstract: A silicon base optical waveguide manufacturing method including the steps of preparing a silicon wafer having a plurality of embedded optical waveguides, performing first-stage dicing of the silicon wafer to form a cut groove by using a first resin diamond blade having a thickness t1, and performing second-stage dicing of the silicon wafer along the cut groove to polish an end face of each optical waveguide by using a second resin diamond blade having a thickness t2 greater than the thickness t1. The second resin diamond blade includes diamond abrasive grains having a grain diameter of 2 &mgr;m or less, and the relation between the thicknesses t1 and t2 is set to t1+0.01 mm≦t2≦t1+0.05 mm.

Abstract: In a wafer polishing apparatus which polishes a wafer surface or in a wafer cleaner, there are provided a transfer and cleaning chamber which shuts off a wafer from the outside air and an inert gas supply device which fills an inert gas into the transfer and cleaning chamber. Thus, there are provided a polishing apparatus, a cleaner, a cleaning method and a wafer evacuation program which can prevent the oxidation and modification of a wafer surface in each step, such as the polishing step of a wafer, the transfer step after polishing, the cleaning step after polishing, the drying step after polishing, the inspection step after polishing, and the storage step after polishing.

Abstract: A half toroidal CVT disk having an inner surface portion, an outer surface portion and a toroidal surface having a given machining allowance is centered with said inner surface portion worked prior to the heat treatment of said half toroidal CVT disk as the standard thereof, and then is chucked by a chuck mechanism. The toroidal surface of the chucked half toroidal CVT disk is ground by a grinding mechanism with the grinding wheel for grinding the half toroidal CVT disk in a state that one of said half toroidal CVT disk and said tool is inclined at a given angle with respect to the other.

Abstract: A grinding method, in which the grinding operation is performed on a plurality of workpieces having different thicknesses with an end surface in the thickness direction of each workpiece being a surface to be ground, includes the steps of holding the workpieces with a holder such that the surfaces to be ground of the individual workpieces are aligned in the same plane, and grinding the surfaces to be ground of the workpieces while the workpieces are held by the holder. An electronic component provided with an element ground by the grinding method, and a variable capacitor provided with an element ground by the grinding method are also disclosed.

Abstract: A method for cutting thin film filter work pieces has two embodiments. In a first embodiment, an intermediate layer (13) binds an augmenting substrate (14) to a glass substrate (12) of the work piece (16) prior to cutting of the work piece. In a second embodiment, the work piece (23) comprises a glass substrate (22) which is thicker than a final desired thickness. After the work piece is cut, a surplus portion (222) of the glass substrate is removed. Both embodiments of the method increase the effective thickness of the work piece, which reduces the residual stress in the final thin film filter product, and reduces the risk of a film stack (11, 21) of the work piece peeling from the glass substrate during the cutting process.

Abstract: A method for preventing copper corrosion on a wafer during a chemical mechanical polishing process when the process is temporarily halted due to equipment malfunction and an apparatus for carrying out such method are disclosed. In the method, after the chemical mechanical polishing process is stopped for correcting equipment malfunction or any other processing problems, a cleaning solvent is sprayed toward the wafer surface to remove substantially all slurry solution from the surface to prevent corrosion of the copper layer, or other metal layer, by the slurry solution. The cleaning solvent may be sprayed from spray nozzles mounted around and juxtaposed to the polishing table onto which the polishing pad is mounted as long as the spray nozzles do not interfere with the rotation of the polishing pad.

Abstract: Surface processing of metal, such as CMP, is enhanced and defects reduced by pretreatment to remove a surface layer exhibiting properties different from the bulk metal, such as a baked on oxide layer. Embodiments of the present invention include acid soaking a non-magnetic substrate having an Al, Ni or Ni—P surface with a baked oxide film thereon, thereby removing the oxide film and rendering the reduced surface amenable to CMP with reduced defects, reduced surface roughness and increased production throughput.

Abstract: A substrate cleaning apparatus is provided which comprises a box in which a substrate is cleaned with a cleaning liquid, and an exhaust system for exhausting the box, wherein the box is provided in its upper wall with an air intake opening and the exhaust system is fluidly connected to the box at a lower wall of the box so that air is introduced into the box through the air intake opening, flows down in the box passing around the substrate and finally exits the box through the exhaust system. A door is provided to close the air intake opening when an inside air pressure in the box becomes greater than an outside air pressure outside the box.

Abstract: An integrated process tool for chemical mechanical processing, cleaning and drying a semiconductor workpiece is provided. The integrated process tool includes a CMP module and a cleaning and drying module. After being processed, the workpiece is transported from the CMP module to the cleaning and drying module using a movable housing. In the cleaning and drying module, a cleaning mechanism is used to clean the workpiece while the workpiece is rotated and held by a support stucture of the movable housing. A drying mechanism of the cleaning and drying module picks up the workpiece from the moveable housing and spin dries it. Throughout the CMP process, cleaning and drying, the processed surface of the wafer faces down.

Abstract: A liquid crystal display device, a liquid crystal display device cutting method, and a liquid crystal display device cutting apparatus that prevents damaging attached flexible conductive lines by providing a rounded water jet cut edge of a glass liquid crystal panel. The liquid crystal display device cutting apparatus includes a pump for increasing the pressure of a liquid, a nozzle with a throat that receives the pressurized liquid, a movable nozzle support that is movable at least in a plane parallel to the liquid crystal display, and a conveyor supporting the liquid crystal display device.

Abstract: A method for polishing a surface of metal on a semiconductor substrate by using a polishing pad and hydrogen peroxide, and removing particles of metal from the semiconductor substrate by polishing, and dissolving the particles in the quantity of hydrogen peroxide.

Abstract: Disclosed is a production method of an aluminum support for a lithographic printing plate, capable of stable and low-cost production of an aluminum support for a lithographic printing plate, the support being scarcely subject to generation of treatment unevenness called streaks or grainy unevenness ascribable to the different in the aluminum dissolving rate due to the difference in the orientation of the crystal grain. The aluminum support is produced by surface graining and then polishing an aluminum plate or by polishing an aluminum plate while etching it in an aqueous acid or alkali solution. The aluminum plate may be subjected to polishing and then to anodization or may be subjected to polishing, to surface graining, again to or not to polishing and then to anodization. A production method for producing a high-quality support for a lithographic printing plate, free of local unevenness is also disclosed.

Abstract: A method of backgrinding wafers wherein backgrinding tape or a pad is applied to the chuck and not to the wafers. The backgrinding tape or pad is left on the chuck as each wafer is sequentially placed on the tape or pad, background, and then removed from the tape. A tool for applying tape to a chuck, as described herein, facilitates this method.

Abstract: A method for polishing a metal layer (e.g. copper) on a workpiece is provided wherein relative motion is produced between the metal layer and a polishing surface and wherein the metal layer has a polish resistant film thereon. The metal layer is first pre-treated to substantially remove the polish resistant film. Next, the metal layer is polished at low pressure between the metal layer and the polishing surface in the presence of a polishing solution. The pretreating may be accomplished by, for example, sputtering, polishing the polish-resistant film in the presence of abrasive polishing solution, polishing the polish-resistant film at higher pressures between the film and the polishing surface and/or maintaining the temperature of the pretreating step to be substantially between 10 degrees Centigrade and 30 degrees Centigrade.

Abstract: Disclosed is a wafer edge polishing system which improves the throughput and reduces the average processing cost. The system incorporates a wafer inspection unit. A wafer is polished in a wafer edge polishing unit and carried by a carrier unit to the wafer inspection unit where the polished surfaces of the wafer is inspected, and if it is judged as poorly polished, it is re-carried to the wafer edge polishing unit by the carrier unit.

Abstract: A method and a composition is disclosed comprising polishing the substrate using a slurry and introducing solution onto a metallized layer that comprises an acid.

Abstract: An apparatus and method of reclaiming a disk substrate. The cost of reclaiming a disk substrate can be lower, and the quality higher, than making a new one from a blank. A layer of a data storage disk is stripped, e.g., by acid/oxidizing bath immersion. The stripped disk is polished in a carrier between polishing pads, with the relative velocity of the polishing pads as seen by the disk being precisely controlled so that an equal amount of stock is removed from each side. Preferably, several stripped disks are sorted into groups based on disk thickness, and disks from one of the groups are simultaneously polished in the carrier. Sorting improves stock removal uniformity from disk to disk. The polished disks are cleaned and, preferably, ordered in a cassette for stacking in a storage device based on disk thickness to more easily meet a mean center specification.

Abstract: There are provided a substrate for information recording media and a manufacturing method thereof, according to which the projection height of minute undulations formed on the substrate surfaces can be made more uniform, and variation in the projection density can be suppressed. First, chemical strengthening treatment is carried out on a glass substrate that has been prepared by processing a sheet-shaped starting material glass plate into a predetermined shape. Then, precision polishing is carried out on the glass substrate that has been subjected to the chemical strengthening treatment, such that a polishing amount in a thickness direction of the glass substrate is within a predetermined range. Finally, surface washing is carried out on the glass substrate that has been subjected to said precision polishing.

Abstract: A silicon base optical waveguide manufacturing method including the steps of preparing a silicon wafer having a plurality of embedded optical waveguides, performing first-stage dicing of the silicon wafer to form a cut groove by using a first resin diamond blade having a thickness t1, and performing second-stage dicing of the silicon wafer along the cut groove to polish an end face of each optical waveguide by using a second resin diamond blade having a thickness t2 greater than the thickness t1. The second resin diamond blade includes diamond abrasive grains having a grain diameter of 2 &mgr;m or less, and the relation between the thicknesses t1 and t2 is set to t1+0.01 mm≦t2≦t1+0.05 mm.

Abstract: A method of removing the damaged surface layer beneath a coating on a component. The method includes evaluating the component to assess the depth of the damaged substrate layer, followed by sensing a plurality of points over the outer surface of the component to determine a three-dimensional outer surface profile thereof. A three-dimensional grinding profile beneath the outer surface profile is then established based on the depth of the damaged substrate layer beneath the outer surface profile. The component is then ground along the grinding profile such that the damaged substrate layer is substantially removed without significantly removing an undamaged region of the substrate beneath the damaged substrate layer.

Abstract: A method for monitoring consumable performance in a processing tool comprises storing a performance model of the processing tool; receiving a consumable item characteristic of a consumable item in the processing tool; determining a predicted processing rate for the processing tool based on the consumable item characteristic and the performance model; determining an actual processing rate of the processing tool; and determining a replacement interval for the consumable item based on at least the actual processing rate. A processing system includes a processing tool and an automatic process controller. The processing tool is adapted to process wafers and includes a consumable item.

Abstract: A plurality of disks include a first disk and a second disk stacked upon the first disk. The first disk and the second disk are each formed from glass or glass-ceramic. A powder is disposed between the first disk and the second disk. The powder is selected from the group including calcium carbonate, calcium magnesium carbonate, calcium phosphate, magnesium carbonate, magnesium borate, magnesium oxide, magnesium phosphate, and clay.