Abstract: A method is provided for polishing a device wafer, which has projections and depressions formed on a surface thereof, with the use of an abrading plate. The method comprises polishing the device wafer while supplying a surface active agent and/or while dressing a surface of the abrading plate. This method for polishing the device wafer can always exhibit a self-stop function, without being restricted by the composition of the abrading plate, and without being restricted by the type of the substrate.

Abstract: A method for finishing the surface of a rolling contact component, such as a bearing roller element, a bearing ring or a traction drive rolling element, comprises the steps of: carrying out a cutting operation on the surface, subsequently calendering or burnishing the surface by means of a ball comprising a material harder than the bearing component material whereby the maximum calendering or burnishing pressure exerted on the surface is less than 7 Gpa.

Abstract: Methods and apparatus for planarizing a substrate surface having copper containing materials thereon is provided. In one aspect, the invention provides a system for processing substrates comprising a first platen adapted for polishing a substrate with a hard polishing pad disposed on the first platen, a second platen adapted for polishing a substrate with a hard polishing pad disposed on the second platen, and a third platen adapted for polishing a substrate with a hard polishing pad disposed on the third platen. In another aspect, the invention provides a method for planarizing a substrate surface by the system described above including substantially removing bulk copper containing materials on the first platen, removing residual copper containing materials on the second platen, and then removing a barrier layer on the third platen. A computer readable program may also be provided for performing the methods described herein.

Abstract: There is disclosed a scrub cleaning device which can reduce cleaning time and which requires no large-scaled device for transferring a substrate to the next cleaning process.

Abstract: A grinder for use with a tire uniformity machine and being selectially moved into and out of contact with a tire mounted in the tire uniformity machine and including a pair of rotatable grindstones for grinding the tire carried by a grinding head. The grindstones are moved radially toward and away from the tire and are driven by one or more motors mounted on the grinding bead for rotating the grindstones in opposite directions relative to each other.

Abstract: In a chemical mechanical polishing apparatus in accordance with the present invention, a material having a hardness defined by JIS standard K6301 (A type) of 10-40 and a thickness of 5-30 mm is used as an elastic member (16) arranged between a polishing pad (12) and a platen (36). Therefore, both flatness and uniformity of a wafer can be sufficiently improved.

Abstract: A machine for grinding coated sheets of glass has a supporting surface for a sheet of glass for grinding, and two grinding units located on opposite sides of the supporting surface; each grinding unit having at least one first grinding wheel for grinding a portion of a peripheral edge of the sheet of glass, and a second grinding wheel for removing a portion of the layer of material coating the sheet of glass.

Abstract: A polarization method that utilizes a chemical-mechanical polishing operation. In the polishing operation, slurry for polishing a metallic layer is first employed to remove a greater portion of the metallic layer. Next, slurry for polishing a dielectric layer and having properties very similar to the metal-polishing slurry is added and mixed together with the slurry for polishing a metallic layer so that the polishing rate for the dielectric layer is increased. Consequently, metallic residues remaining on the dielectric layer are removed and a planar dielectric layer is obtained at the same time.

Abstract: An orbital finishing sander for finishing coarsely sanded wood pieces includes a support frame and a conveyor belt movably mounted on the frame and extending generally horizontally thereon. An orbital sander support such as a plate is mounted on the frame and extends over and above the conveyor belt for supporting at least one orbital sander vertically movably mounted on the orbital sander support, the orbital sander being movable between a lowered engagement position and a raised non-engagement position. At least one orbital sander movement device such as a pneumatic ram would be operatively connected to each one orbital sander for moving the associated orbital sander between the lowered engagement position and the raised non-engagement position.

Abstract: A method of polishing a wafer in a carrier by a polishing pad, controlling a ratio of platen speed to carrier speed (PS to CS) within a specific range, or controlling a first polishing step with a PS to CS ratio in the range of about 150:1 to about 1:150 followed by a second polishing step with a platen speed of about 0 to 20 rpm while maintaining the carrier speed used in the first polishing step, which maximizes clearing of residual material removed from a patterned wafer surface by polishing.

Abstract: A system and method are disclosed for preparing platens to perform lapping operations. The system includes a platter that is rotatably mounted on a base and designed to receive the platen thereon. A main drive motor is provided for rotating the platter and the platen disposed thereon. A plurality of pressure arms are disposed on the base and configured to include a tool receiving portion that can be positioned in alignment with a lapping surface of the platen, and configured to softly touch a tool to a platen. A tool is attached to each tool receiving portion so that predetermined operations can be performed on the lapping surface of the platen. A monitor is provided to monitor predetermined parameters and maintain substantially constant conditions while preparing the platen.

Abstract: A method includes providing at least one wafer having a process layer formed thereon. A surface of the process layer is polished using a first polishing process that is comprised of a slurry and a first polishing pad. The slurry is removed from the surface of the process layer. The surface of the process layer is planarized using a substantially slurryless second polishing process that is comprised of a second polishing pad that is more abrasive than the first polishing pad. A system includes a polishing tool and a process controller. The polishing tool is adapted to receive at least one wafer having a process layer formed thereon. The polishing tool is a adapted to polish a surface of the process layer using a first polishing process that is comprised of a slurry and a first polishing pad and remove the slurry from the surface of the process layer.

Abstract: A CMP slurry for and method of polishing a semiconductor wafer during formation of metal interconnects are disclosed. The present invention utilizes a first slurry comprising a first oxidizer, preferably ferric nitrate, to remove the excess metal of the metal interconnect but which leaves the metal residues on the surface of the wafer. A second slurry comprising another oxidizer, preferably potassium iodate solution, having a greater affinity to both the metal residue and the liner material than the underlying dielectric is used to remove the metal residue and liner material with significantly reduced scratching of the underlying dielectric. The more robust metal interconnects formed utilizing the present invention is effective in lowering the overall resistance of a wafer, reducing the number of shorts, and provides greater protection of the underlying dielectric. Overpolishing of the wafer and its associated problems are avoided.

Abstract: A polishing method and apparatus can concurrently establish a stable removal rate, a small step height reduction rate, and reduction of detects on the polished surface for various kinds of polished subjects, while providing less environmental problems and requiring less processing costs. The method for polishing a surface of a semiconductor device wafer comprises first polishing a surface of the semiconductor wafer by a first fixed abrasive polishing method; and finish polishing the polished surface of the semiconductor wafer by a second fixed abrasive polishing method different from the first fixed abrasive polishing method.

Abstract: In one implementation, a chemical mechanical polishing method includes providing a workpiece having a dielectric region to be polished. A first chemical mechanical polishing of the dielectric region is conducted on the workpiece using a polishing pad and a first slurry. Then, a second chemical mechanical polishing is conducted of the dielectric region on the workpiece using the polishing pad and a second slurry different from the first slurry. In one implementation, a chemical mechanical polishing method includes providing a workpiece having a dielectric region to be polished. The dielectric region has a thickness ultimately desired to removed by polishing prior to moving the workpiece on to a subsequent nonpolishing processing step. A first chemical mechanical polishing of the dielectric region is conducted on the workpiece using a first slurry. Then, a second chemical mechanical polishing of the dielectric region is conducted on the workpiece using a second slurry different from the first slurry.

Abstract: The present invention is directed to a method of polishing wafers on a polishing tool comprised of first, second and third platens. The method comprises providing a wafer having a patterned layer of insulating material, a barrier metal layer, and a metal layer formed above the wafer, performing a first polishing operation on the wafer at the first platen to remove a majority of the metal layer above the barrier metal layer, and performing an endpoint polishing operation on the wafer at the second platen to remove at least some of the metal layer.

Abstract: Disclosed is a production method of an aluminum support for a lithographic printing plate, capable of stable and low-cost production of an aluminum support for a lithographic printing plate, the support being scarcely subject to generation of treatment unevenness called streaks or grainy unevenness ascribable to the different in the aluminum dissolving rate due to the difference in the orientation of the crystal grain. The aluminum support is produced by surface graining and then polishing an aluminum plate or by polishing an aluminum plate while etching it in an aqueous acid or alkali solution. The aluminum plate may be subjected to polishing and then to anodization or may be subjected to polishing, to surface graining, again to or not to polishing and then to anodization. A production method for producing a high-quality support for a lithographic printing plate, free of local unevenness is also disclosed.

Abstract: The present invention provides a chemical mechanical polishing device for polishing a wafer. The chemical mechanical polishing device comprises a platen, an outer polishing pad, an inner polishing pad, a slurry providing system, and a rotating carrier. The inner polishing pad is located on the platen. The outer polishing pad is mounted on the outer polishing pad and peeled off when abraded from overuse. The slurry providing system provides a slurry to the surface of the outer polishing pad. The rotating carrier holds the wafer and contacts the surface of the wafer with the slurry and the polishing pad to carry out the chemical mechanical polishing process.

Abstract: A method of surface-treating a reactor member for effectively removing a Cr-deficient layer and a work-hardened layer considered to be a cause of stress-corrosion cracking (SCC) under low-stress conditions. The method of surface-treating a reactor member which is worked by bending (step 1) and then processed by a heat treatment (step 2), in which a work-hardened layer is formed by the bending, and in which a Cr-deficient layer is formed due to an oxide film attached by the heat treatment, uses at least one of: acid wash; grinding; electrolytic polishing; electro-discharge machining; surface cutting; surface deoxidation and softening; wet blasting; laser machining; or surface plating (step 3) to remove the work-hardened layer and the Cr-deficient layer from the reactor member or to prevent contact of the work-hardened layer and the Cr-deficient layer of the reactor member with a primary coolant.

Abstract: A system and method are disclosed for preparing platens to perform lapping operations. The system includes a platter that is rotatably mounted on a base and designed to receive the platen thereon. A main drive motor is provided for rotating the platter and the platen disposed thereon. A plurality of pressure arms are disposed on the base and configured to include a tool receiving portion that can be positioned in alignment with a lapping surface of the platen. A tool is attached to each tool receiving portion so that predetermined operations can be performed on the lapping surface of the platen. A monitor is provided to monitor predetermined parameters and maintain substantially constant conditions while preparing the platen.

Abstract: A short CMP polish process is provided which removes minimal amounts of oxide and reduces defectivity at the surface of the wafer during short periods of rework by maintaining a high pH at the wafer surface in the presence of a high pH slurry. In one embodiment of the present inventions, the first platen of a multi-platen CMP machine is skipped for polishes of a short duration. In a second embodiment, a large amount of slurry is used to prime the second polish platen, thus displacing deionized water at the surface of the wafer which would ordinarily lower the initial pH of the process. Additionally, downforce may be minimized to reduce defectivity.

Abstract: In chemical mechanical polishing, a substrate is planarized with one or more fixed-abrasive polishing pads. Then the substrate is polished with a standard polishing pad to remove scratch defects created by the fixed-abrasive polishing pads.

Abstract: The present invention is directed, in general, to an improved material and method of planarizing a surface on a semiconductor wafer and, more specifically, to a method of altering the properties of polymers, preferably thermoplastic foam polymers, used in polishing applications. The chemical and mechanical properties thermoplastic foam substrates can be transformed by inorganic, inorganic-organic, and or organic—organic grafting techniques, such that the polymer foam is endowed with new set of properties that more desirable and suitable for polishing.

Abstract: The present invention provides a dual purpose workpiece handoff station for intermediately staging a semiconductor wafer, or other workpiece, being transferred between processing stations in, for example, a Chemical-Mechanical Planarization (CMP) machine. The handoff station includes a workpiece processing surface; such as a polishing pad or buffing pad, defining a plurality of apertures for applying fluids, including water, chemicals, slurry, or vacuum, to the surface of a workpiece. In operation, a workpiece carrier moves a polished wafer from a primary polishing surface to the handoff station, and polishes, buffs, or cleans the wafer in the handoff station by rotating the wafer and oscillating the wafer across the handoff station polishing surface while pressing the wafer thereon.

Abstract: A grinding apparatus for grinding a spline ball groove on a workpiece comprises a rod-shaped grindstone, having a distal end portion with a curved surface corresponding to the groove to be ground, and a spindle mechanism for rotating the grindstone. The spindle mechanism and the grindstone are supported by means of a supporter in a manner such that they are inclined at a given angle to an axis of the workpiece. A rotary dresser, which has a dress groove corresponding to the curved surface of the distal end portion of the grindstone, is disposed near the grinding apparatus. The grindstone can be reciprocated along the axis of the workpiece by a drive mechanism between the workpiece and the dresser without changing its angle of inclination.

Abstract: An apparatus for grinding a glass base material having a core and a clad comprising: a grinding wheel for grinding the clad; a measuring unit for measuring an eccentricity between a center position of the glass base material and a center position of the core at a plurality of positions along a longitudinal direction of the glass base material; a design unit for calculating target diameters substantially continuous throughout the longitudinal direction of the glass base material so that the eccentricity becomes substantially zero for each of the plurality of positions; and a control unit for controlling the grinding wheel to grind the clad so that a diameter of the glass base material to be the target diameter substantially continuous throughout the longitudinal direction of the glass base material based on the target diameters calculated by the design unit.

Abstract: A multi-platen chemical-mechanical polishing system is used to polish a wafer. The wafer is polished at a first station. During polishing, an endpoint is detected. The endpoint is detected by generating optical radiation by a first light source. The first optical radiation travels through a translucent area in a surface of a first platen and travels through a first polishing pad. After being reflected by the wafer, the optical radiation returns through the first polishing pad through the translucent window to a first optical radiation detector. The first polishing pad has a uniform surface in that no part of the surface of the first polishing pad includes transparent material through which non-scattered optical radiation originating from the first light source can pass and be detected by the first optical radiation detector. Optical radiation that travels through the first polishing pad and is detected by the first optical radiation detector is haze scattered by inclusions within the first polishing pad.

Abstract: A CMP method for polishing and flattening a film having a rugged surface and formed on a surface of semiconductor substrate by making use of an abrasive cloth while feeding an abrasive agent to the film, wherein the abrasive agent comprises abrasive grains having a surface potential adjusted to negative, and a surfactant formed of a water soluble polymer. Cerium oxide or silicon oxide can be employed as the abrasive grain. As for the surfactant, it is possible to employ ammonium polyacrylate or an organic amine salt.

Abstract: A system and method for chemically and mechanically polishing surfaces of semiconductor wafers utilizes multiple polishing pads having diameters that are smaller than the diameter of the wafers to simultaneously polish a given semiconductor wafer. The use of these smaller-sized polishing pads can significantly reduce the footprint of the system. Furthermore, the simultaneous polishing of the wafers by the multiple smaller-sized polishing pads can significantly increase the throughput for short period planarization. In addition, by independently controlling the lateral movement, the vertical movement and the rotational speed of each of the polishing pads during polishing, the system and method can more precisely control the amount of polishing at different regions of a wafer surface.

Abstract: The method of polishing a surface of a material composed of at least two components, each being present in or on the surface to be polished, includes polishing the surface with at least one of a polishing wheel and a suspension at a predetermined working temperature at which erosion of the at least two different components is compensated, because of different thermal expansion properties of the at least two different components and so that surface roughness of the surface is minimized at an application temperature of the material. When the erosion properties of the components are the same and the thermal expansion properties are different the working temperature corresponds to the later application temperature.

Abstract: There is disclosed a method for polishing a work wherein polishing liquid is supplied to a polishing pad, and a relative movement is carried out between the work and the polishing pad with pressing the work on the polishing pad, wherein the work of which press pressure was set to 0 to terminate polishing is released from the polishing pad within 45 seconds after the termination of polishing. When plural works are simultaneously polished, preferably only the work to which press pressure was set to 0 to terminate polishing is released from the polishing pad, and polishing of the other works is continued, which are released from the polishing pad after press pressure thereto is set 0 one by one.

Abstract: A surface of an electrolytically dissolvable material, e.g., an electrolytically dissolvable metal, is smoothed by a two-step electrochemical process wherein a the surface to be smoothed and a counterelectrode are contacted with an electrolyte and an electric current is passed between the substrate and counterelectrode, with the substrate as the anode. In a first step relatively large asperities on the substrate are reduced in height by maintaining a macroprofile regime by using a pulsed electric current with short pulses. In a second step, small asperities and the remainder of the large asperities are reduced or removed by maintaining a microprofile regime by using a pulsed current having longer pulses or a direct current.

Abstract: The method of preparing cold mill work rolls for forming a surface finish on a metal substrate includes the steps of placing a work roll on a grinder, truing the work roll, roughening the work roll, and performing at least one finishing pass on the work roll. The method may further include the step of sanding the work roll. The finished work roll may be inserted into a cold mill and the metal substrate cold rolled with the work rolls to achieve the desired surface finish.

Abstract: In one embodiment, the invention is directed toward inline lapping of magnetic tape. The lapping process is performed inline with one or more other magnetic tape manufacturing processes. In this manner, the number of times the magnetic tape is un-spooled and then re-spooled can be reduced. Consequently, the amount of handling of the individual tape pancakes can also be reduced, thus avoiding damage to the edge of the tape, or other damage associated with tape pancake handling.

Abstract: An arrangement for planarizing a surface of a semiconductor wafer. The arrangement includes a planarizing member having a planarizing surface configured to be (i) positioned in contact with and (ii) moved relative to the surface of the semiconductor wafer so as to remove material from the surface of the semiconductor wafer such that the surface of the semiconductor wafer is planarized. The arrangement also includes an adherence promoting ligand chemically bonded to the planarizing surface of the planarizing member. The arrangement further includes an abrasion particle chemically bonded to the adherence promoting ligand such that the abrasion particle is attached to the planarizing surface of the planarizing member. The arrangement also includes a conditioning bar having a conditioning portion positioned in contact with a wafer track defined on the planarizing member. The conditioning portion is configured so that the conditioning portion extends completely across the wafer track.

Abstract: The invention relates to a method and device for grinding fluted tools (10) that have an essentially circular envelope curve, in particular, for grinding spiral fluted tools. The device provided with a steady for guiding the tool to be ground comprises a guideway (8) with at least two inner lateral faces. The lateral faces each extend in planes in a manner that is essentially parallel to the longitudinal axis of the tool to be ground and they form an angle for accommodating the tool to be ground, whereby the tool to be ground rests each time with at least two circumferential points (a11, a12) of its essentially circular envelope curve at least on two of the inner lateral faces of the guideway. In order to carry out the inventive method, a tool to be ground is appropriately clamped and pressed into the guideway by means of at least one grinding wheel (41) while the flutes are ground.

Abstract: In a process for polishing the chamfered peripheral part of a wafer using a polishing cloth while supplying a polishing slurry in order to improve productivity of the process by reducing a polishing time, at least two steps of polishing processes are performed in sequence. The process comprises a first polishing process to polish a particular part, e.g. the part corresponding to the {110} plane of a peripheral part of the wafer and a second polishing process in which the whole part of a peripheral part of the wafer is polished for finishing by means of varying a hardness of the polishing clothes and/or a particle size of abrasives in the slurry such as the hardness of the polishing cloth in the second polishing process being softer than that of in the first polishing process and a particle size of abrasives in the slurry in the second polishing process being finer than that of in the first polishing process.

Abstract: A library of materials is screened for mechanical properties such as strength, tack or other properties. A library of materials is provided. A stimulus such as a stress or force is provided to each member of the library. A response (e.g., a strain) of each of the materials due to the stimulus is measured and the response, the stimulus or both are recorded and related to provide data. Thereafter, the data is analyzed to reach conclusions regarding properties of the material samples.

Abstract: A process for the surface polishing of a silicon wafer, includes the successive polishing of the silicon wafer on at least two different polishing plates covered with polishing cloth, with a continuous supply of alkaline polishing abrasive with SiO2 constituents, an amount of silicon removed during the polishing on a first polishing plate being significantly higher than on a second polishing plate, with the overall amount of silicon removed not exceeding 1.5 &mgr;m. A polishing abrasive (1a), then a mixture of a polishing abrasive (1b) and at least one alcohol, and finally ultrapure water (1c) are added to the first polishing plate, and a mixture of a polishing abrasive (2a) and at least one alcohol and then ultrapure water (2b) are added to the second plate.

Abstract: A method for the production of a glass substrate for magnetic recording mediums comprises the steps of sandwiching an abrasion board for correction between upper and lower surface tables of a both side-polishing device for polishing the glass substrate, while these upper and lower surface tables are fitted to the polishing device, rotating the upper and lower surface tables in the opposite directions while supplying cooling water to thus polish the surface of these tables to a flatness of the table surface on the order of not more than 30 &mgr;m; then adhering abrasion cloths to the upper and lower surface tables, respectively; thereafter repeatedly polishing the surface of the glass substrate for magnetic recording mediums. The production method permits the efficient production of an excellent glass substrate for magnetic recording mediums.

Abstract: The present invention relates to a front sheet of a microwave oven and a method for manufacturing the front sheet. The method for manufacturing the front sheet of the microwave oven according to the present invention comprises a first process including a chemical polishing process of removing foreign materials from and polishing a surface of an aluminum sheet so as to give a predetermined luster thereto; a process of forming a porous anodic oxide film onto the surface of the aluminum sheet; a process of dipping the aluminum sheet into a solution containing a dye and penetrating the dye into a porous film of the anodic oxide film; and a process of sealing the porous film into which the dye has been penetrated. The microwave oven according to the present invention includes a colored front sheet manufactured by anodizing and dyeing the surface of the aluminum sheet and attached to a front face of a door portion or a control panel portion of the microwave oven.

Abstract: Abrasive articles abrasive articles (e.g., abrasive wheels) comprised of abrasive agglomerate particles dispersed within cellular polymeric material, and methods of making and using the abrasive articles.

Abstract: A chemical mechanical polishing includes a first spindle operable to rotate with respect to a central axis of the first spindle. A first polishing pad is coupled with the first spindle, and the first polishing pad has a first surface extending along a plane generally perpendicular to the central axis of the first spindle. A wafer carrier is included that is adapted to receive a wafer with a second surface generally parallel to the first surface of the first polishing pad. The wafer carrier is operable to rotate with respect to a central axis of the wafer carrier. The first surface of the first polishing pad is moveable along the central axis of the first spindle from a first position, wherein the first surface is spaced from the second surface, and a second position, wherein the first surface generally contacts the second surface.

Abstract: A method of grinding a semiconductor using grinding machine having a chuck table for holding a semiconductor and a grinding means for grinding the top surface of a semiconductor placed on the chuck table, comprising the step of holding the ground semiconductor wafer carried out from the chuck table after grinding by means of a wafer holding tray.

Abstract: The present invention provides a method for producing a frosted glass product, where a sand blast processing using a powder class abrasive and a brush polishing treatment are performed and thereby appearance and touch feeling equal to those of a product worked by the chemical frost processing can be attained. In particular, the present invention provides a method for producing a frosted glass product, which is safe in the work and at the same time, mild to the environment. The invention is a method for producing a frosted glass product, which is a method for obtaining a glass product having a delustered surface such that the surface roughness Ra of the glass is from 0.4 to 1.2 &mgr;m, the method comprising a step of sand-blasting a glass surface using an abrasive having a grain size of less than #220, and a step of brush-polishing the sand-blasted surface.

Abstract: A system and a method of forming copper interconnect structures in a surface of a wafer is provided. The method includes a step of performing a planar electroplating process in an electrochemical mechanical deposition station for filling copper material into a plurality of cavities formed in the surface of the wafer. The electroplating continues until a planar layer of copper with a predetermined thickness is formed on the surface of the wafer. In a following chemical mechanical polishing step the planar layer is removed until the copper remains in the cavities, insulated from one another by exposed regions of the dielectric layer.

Abstract: A blade sharpening method and apparatus is characterized by sharpening the blade in a single station grinding assembly. The grinding assembly includes two opposed abrading wheels which interlock to form a nip for sharpening the blade. The wheels each include a first coarse portion for roughing an edge of the blade, a second fine portion for finishing the hone facet, and a third coarse portion for forming other facets adjacent to the hone facet. The wheels are specially contoured and have parallel axes tilted relative to the direction of travel of the blade. The striations formed on the facets of the blade by the abrading wheels extend at the same angle in both facets.

Abstract: A nonplanar substrate surface is substantially uniformly planarized by a chemical mechanical planarization (CMP) process. The CMP process uses multiple sources of slurry delivered in between a slurry distribution screen and a slurry membrane of the CMP apparatus. The multiple slurry sources have differing chemical and physical compositions, and are delivered to different locations along the membrane. The slurries bleed into each other during polish to form a radially-variable, slurry abrasiveness concentration gradient. As a result, there are areas with a greater abrasiveness concentration of slurry, and hence a greater frictional contact. The slurry flow rate and concentration is adjusted along the wafer surface according to the non-uniformly planar areas of the wafer. Consequently, uniform planarization is substantially achieved.

Abstract: A reliable, inexpensive “back side” thinning process, capable of globally thinning an integrated circuit die to a target thickness of 10 microns, and maintaining a yield of at least 80%, for chip repair and/or failure analysis of the packaged die. The flip-chip packaged die is exposed at its backside and mounted on a lapping machine with the backside exposed. The thickness of the die is measured at at least five locations on the die. The lapping machine grinds the exposed surface of the die to a thickness somewhat greater than the target thickness. The exposed surface of the die is polished. The thickness of the die is again measured optically with high accuracy. Based on the thickness data collected, appropriate machine operating parameters for further grinding and polishing of the exposed surface are determined. Further grinding and polishing are performed. These steps are repeated until the target thickness is reached.

Abstract: The invention generally provides methods and compositions for planarizing a substrate surface having underlying dielectric materials. Aspects of the invention provide compositions and methods using a combination of low polishing pressures, polishing compositions, various polishing speeds, selective polishing pads, and selective polishing temperatures, for removing barrier materials by a chemical mechanical polishing technique with minimal residues and minimal seam damage. Aspects of the invention are achieved by employing a strategic multi-step process including sequential CMP at low polishing pressure to remove the deposited barrier materials.