Abstract: Slurries for chemical mechanical polishing (CMP) are provided including a high planarity slurry and high selectivity ratio slurry. A high planarity slurry includes at least one kind of metal oxide abrasive particle and an anionic polymer passivation agent having a first concentration. A high selectivity ratio slurry includes at least one kind of the metal oxide abrasive particle, the passivation agent in a second concentration that is less than the first concentration of the passivation agent for the high planarity slurry, one of a quaternary amine and the salt thereof, and a pH control agent. The high selectivity ratio slurry has a pH in a range of about over an isoelectric point of a polishing target layer and less than an isoelectric point of a polishing stopper. In addition, a CMP method using the CMP slurries having high planarity and high selectivity ratio is provided.

Abstract: Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces are disclosed herein. In one embodiment, an end effector for conditioning a polishing pad includes a member having a first surface and a plurality of contact elements projecting from the first surface. The member also includes a plurality of apertures configured to flow conditioning solution to the polishing pad. The apertures can extend from the first surface to a second surface opposite the first surface. The member can further include a manifold that is in fluid communication with the apertures. In another embodiment, a conditioner for conditioning the polishing pad includes an arm having at least one spray nozzle configured to spray conditioning solution onto the polishing pad and an end effector coupled to the arm. The end effector includes a first surface and a plurality of contact elements projecting from the first surface.

Abstract: In a process for polishing the chamfered peripheral part of a wafer using a polishing cloth while supplying a polishing slurry in order to improve productivity of the process by reducing a polishing time, at least two steps of polishing processes are performed in sequence. The process comprises a first polishing process to polish a particular part, e.g. the part corresponding to the {110} plane of a peripheral part of the wafer and a second polishing process in which the whole part of a peripheral part of the wafer is polished for finishing by means of varying a hardness of the polishing clothes and/or a particle size of abrasives in the slurry such as the hardness of the polishing cloth in the second polishing process being softer than that of in the first polishing process and a particle size of abrasives in the slurry in the second polishing process being finer than that of in the first polishing process.

Abstract: A grinding apparatus for grinding a spline ball groove on a workpiece comprises a rod-shaped grindstone, having a distal end portion with a curved surface corresponding to the groove to be ground, and a spindle mechanism for rotating the grindstone. The spindle mechanism and the grindstone are supported by means of a supporter in a manner such that they are inclined at a given angle to an axis of the workpiece. A rotary dresser, which has a dress groove corresponding to the curved surface of the distal end portion of the grindstones is disposed near the grinding apparatus. The grindstone can be reciprocated along the axis of the workpiece by a drive mechanism between the workpiece and the dresser without changing its angle of inclination.

Abstract: A sharpener for blades comprises a physical structure supporting at least one abrasive surface. A displaceable guiding plate having an integral linear structural feature of the support is disposed toward one side of the abrasive surface. The linear structural feature provides sliding contact with a face of the blade to establish the relative angle of the plane of the edge facet of the blade with the plane of the abrasive surface at the point of mutual contact as the facet is guided into contact with the abrasive surface.

Abstract: Method of grinding a concentrically clamped crankshaft, a crankshaft grinding machine for carrying out the method, and a crankshaft of high-alloy steel or cast material. The method provides for pin journals and main journals of the crankshaft to be ground in one set-up such that first, at least the main journals are rough-ground and then the pin journals are finish-ground and after that the main journals are finish-ground. The crankshaft grinding machine forms a machining center by means of which corresponding rough-grinding and finish-grinding is possible in a single set-up.

Abstract: The method comprises the steps of mounting a first wafer (13) on the mounting member (12) and securing the mounting member to the hub (16) by drawing a vacuum at a first vacuum pressure through the hub; rotating the hub about the hub axis (AH), rotating a polishing pad (34) mounted on the turntable (30) about the turntable axis (at), and bringing a surface of the wafer (13) and the polishing pad into contact with each other. The wafer (16) is demounted, and the shape of the polished wafer is determined. A second vacuum pressure is selected using the information obtained. A successive wafer is polished according to the same method as the first wafer except that the second vacuum pressure is substituted for the first vacuum pressure. The second vacuum pressure is sufficient to deform the mounting member (12) thereby deform the wafer to improve the flatness and parallelism of the surfaces of the successive wafer.

Abstract: An apparatus and method is provided for polishing work pieces such as semiconductor wafers. The apparatus includes a variable number of independent heads 20, platens 32 and polishing units 18. This polishing apparatus belongs to a group of polishing machines with wafers attached to the same heads 20 through all polishing steps without undesirable reloading from one head 20 to another between polishing steps. Each independent head 20 is automatically coupled to and decoupled from any of the polishing units 18 to optimize throughput and provide flexibility in accommodating different polishing processes. A head transfer subsystem 22 provides an independent means of transfer for each head 20, thus an infinite number of contemporaneous or overlapping polishing cycles can be completed on multiple wafers resulting in maximum processing throughput.

Abstract: In accordance with certain aspects of the invention, an exemplary claim can define the steps of providing a rotating mount for the initially cast prosthesis in association with a numerically or computer controlled grinding machine. The grinding wheel is rotatably supported so that the wheel can translate vertically and axially relative to the axis of the workpiece, and can pivot in a plane generally parallel to the axis of the workpiece. In one step, the stem of the workpiece is rotated as the grinding wheel is held in position substantially perpendicular to the axis of the stem. The grinding wheel is then retracted and repositioned along the length of the stem through a series of successive positions. At each position, the grinding wheel is rotated in contact with the rotating workpiece. Once the grinding wheel is positioned at the transition region, the workpiece is preferably rotated through 180° on both sides of the transition region.

Abstract: A system and method are provided that maintains a high pH at the wafer surface through the entire polish process and then lowers the pH only when necessary in a controlled fashion after CMP and during the post-polish clean. A fluid having a high pH chemistry and, optionally, surfactants is used instead of deionized water to keep the wafer and polisher components wet and to clean the slurry residue from the polishing pad.

Abstract: The apparatus for lapping a magnetic head slider includes a lapping plate to which a bar of the magnetic head slider makes a contact by a predetermined lapping pressure, a primary oscillating mechanism that makes a primary oscillating of the bar in a radial direction of the lapping plate, and a secondary oscillating mechanism that makes a secondary oscillating of the bar in a direction perpendicular to a direction of the primary oscillating. A coarse lapping of the bar is performed by a combined oscillating of the primary oscillating and the secondary oscillating, and upon completion of the coarse lapping, the apparatus switches to the primary oscillating to finish lapping of the bar.

Abstract: A lens surface shape is created by a near-finish surface forming rough-cutting step of creating a near-finish surface shape analogous to a lens surface shape based on a prescription of a spectacle lens from a spectacle lens base material 11 by numerically controlled cutting, and a finish-cutting step of creating the lens surface shape based on the prescription of the spectacle lens from the near-finish surface shape by numerically controlled cutting. According to this method of producing a spectacle lens, all kinds of spectacle lenses including an inner surface progressive power lens can be produced with high productivity. A complex curved surface can be mirror-polished by a polishing tool, which includes an elastic sheet 41 having a curved surface, wherein a workpiece is polished by applying a pressure to the inner surface side of the elastic sheet 41, to stretch the elastic sheet 41 and bring the outer surface side of the elastic sheet 41 into contact with the workpiece.

Abstract: Methods and compositions are provided for the chemical mechanical planarization of ruthenium. The method includes polishing the ruthenium layer using a low contact pressure and exposing the ruthenium layer to a planarization composition while polishing. The planarization composition comprises a dispersing medium and a plurality of abrasive particles. The method further includes removing the ruthenium of the ruthenium layer as a ruthenium hydroxide if the pH of the composition is in the range of from about 8 to about 12. The planarization composition may further comprise an oxidizing agent, with the ruthenium removed as a ruthenium hydroxide if the pH of the composition is in the range of from about 2 to about 14. The planarization composition may further comprise a complexing agent, with the ruthenium transformed into an ionic state and removed as a ruthenium complex if the pH of the composition is no greater than about 2.5.

Abstract: A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed-abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.

Abstract: A blade sharpening method and apparatus is characterized by sharpening the blade in a single station grinding assembly. The grinding assembly includes two opposed abrading wheels which interlock to form a nip for sharpening the blade. The wheels each include a first coarse portion for roughing an edge of the blade, a second fine portion for finishing the hone facet, and a third coarse portion for forming other facets adjacent to the hone facet. The wheels are specially contoured and have parallel axes tilted relative to the direction of travel of the blade. The striations formed on the facets of the blade by the abrading wheels extend at the same angle in both facets.

Abstract: Apparatus for removing a burr from an edge of a workpiece comprising a rotating shaft, an abrasive mechanism along a distal end portion of the shaft, and a non-abrasive collar provided along the abrasive mechanism. The non-abrasive collar protects the wall of the workpiece from unintentional abrasion while the rotating abrasive mechanism is advanced into position for deburring. A proximal end of the rotating shaft may be attached to a flexible coupling member for allowing the shaft to deflect when a lateral force is exerted on the apparatus by the wall of the workpiece. The cross-sectional shape of the abrasive mechanism may be curvilinear and/or polygonal, depending upon the shape of the edge to be deburred. Two or more different abrasive mechanisms and/or non-abrasive collars can be simultaneously attached to the shaft.

Abstract: The present invention provides a wafer carrier that includes an opening, which in one embodiment is a plurality of holes, disposed along the periphery of the wafer carrier. A gas emitted through the holes onto a peripheral back edge of the wafer assists in preventing the processing liquids and contaminants resulting therefrom from reaching the inner region of the base and the backside inner region of the wafer. In another embodiment, a plurality of concentric sealing members are used to prove a better seal, and the outer seal is preferably independently movable to allow cleaning of a peripheral backside of the wafer to occur while the wafer is still attached to the wafer carrier.

Abstract: Specific embodiments of the present invention are directed to a method of operating a modular chemical mechanical planarization process. The method comprises operating CMP apparatus comprising a docking station having at least one CMP module and at least one cleaning module to process one or more substrates therein. The plurality of modules are controllable separately by individual controllers associated separately with the modules. One of the modules is disengaged from the docking station, and is mechanically removed to free the module from the docking station, while the other modules are still operable to process the one or more substrates therein.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

Abstract: In chemical mechanical polishing, a substrate is planarized with one or more fixed-abrasive polishing pads. Then the substrate is polished with a standard polishing pad to remove scratch defects created by the fixed-abrasive polishing pads.

Abstract: A method and apparatus provide an integrated circuit package with improved heat dissipation and easier fabrication. The integrated circuit package includes a thinned semiconductor die attached to a heat spreader using a thermally conductive material. The thinned die reduces the thermal resistance of the die/heat spreader combination to improve heat extraction from the die as well as eliminating processing steps in fabrication. Additionally, the thinned die becomes more compliant as it takes on the thermal/mechanical properties of the heat spreader to reduce stress-induced cracking of the die.

Abstract: An improvement is disclosed in a brush cleaning apparatus for cleaning a major surface of a wafer and including wafer guide wheels for transporting the wafer. The improvement includes a polish pad material disposed on a circumference of the guide wheels. The polish pad material is a material used in chemical-mechanical polishing of the wafer. The polish pad material contacts an edge portion of the wafer during cleaning thereof, thereby removing contaminants from the edge portion of the wafer, so that edge cleaning is performed in situ in addition to the brush cleaning of the major surface of the wafer.

Abstract: An apparatus according to the principles of the present invention includes a rotatable platen, a rigid plate member with a top surface and a bottom surface, includes pin members coupled to the rigid plate member which can be inserted into guide openings positioned within the rotatable platen, and a vacuum channel formed within the platen that enables removable mounting the rigid plate member to a top surface of the rotatable platen. The vacuum channel includes a cavity in the top surface of the platen. The rigid plate member adhesively holds the polishing pad to form a rigid plate assembly. A vacuum source coupled to the vacuum channel can be activated to create a vacuum within the vacuum channel to attract the rigid plate member to the platen. The platen can then used to polish work pieces contacting the polishing pad on the top surface of the rigid plate member.

Abstract: A chemical mechanical polishing to polish a substrate having a layer to be polished thereon is described. A pre-polishing process is performed using a softer polishing pad to remove partially raised parts of the layer to be polished before conducting a polishing process using a harder polishing pad. Since the first polishing pad is flexible, porous and with low density, the first polishing pad can be deformed to increase contact areas between the first polishing pad and the raised part of the layer to be polished, and the abrasives are embedded easily in holes of the surface of the first polishing pad. Ultimately, the layer to be polished can be polished directly during the pre-polishing process. Therefore, the processing time is reduced, the consumption of the slurry is decreased and the process cost can be cut down substantially.

Abstract: In an apparatus, after completion of a CMP (i.e., chemical mechanical polishing) operation of a semiconductor wafer, the thus polished wafer is temporarily stored in a water tank before it is subjected to a post-CMP cleaning operation. During its storage period in the water tank, the wafer is prevented from being chemically attacked by an oxidizing agent contained in an abrasive used in the CMP operation. The apparatus includes: the water tank for storing the wafer therein; a pure water supply pipe for supplying pure water to the water tank; an anticorrosion agent supply pipe for supplying an anticorrosion agent to the pure water; a drain pipe connected with a lower portion of the water tank to discharge the water from the water tank; a return pipe for returning the discharged water to an upper portion of the water tank through a pump and a filter, the return pipe branching-off from the drain pipe; and, valves mounted on these pipes.

Abstract: A method of polishing a metal layer comprising the following steps. A structure having an upper patterned dielectric layer with an opening therein is provided. A barrier layer is formed over the patterned upper dielectric layer and lining the opening. A metal layer is formed over the barrier layer, filling the opening. A first polish step employing a first slurry composition is conducted to remove a portion of the overlying metal layer. A second polish step employing the first slurry composition is conducted to: polish the partially removed overlying metal layer; and to expose portions of the barrier layer overlying the patterned upper dielectric layer. A third polish step employing a second slurry composition is conducted to remove the exposed barrier layer portions and exposing underlying portions of the patterned upper dielectric layer. A fourth polish step employing the second slurry composition and BTA is conducted to buff the exposed upper dielectric layer portions.

Abstract: A wafer is pressed against a fixed abrasive and brought into sliding contact with the fixed abrasive. Thus, the wafer is polished. A surface of the fixed abrasive is dressed so as to generate free abrasive particles thereon. A liquid or a gas, composed of a mixture of liquid or inert gas and pure water or chemical liquid, is ejected onto the surface of the fixed abrasive during or after the dressing process.

Abstract: A polishing system controls the durations over which different layers on a substrate are sequentially polished. The polishing system polishes an upper layer using an endpoint detection technique and polishes a lower layer using a closed loop control technique. Once the lower layer is detected during the course of polishing the upper layer, the polishing system automatically enters the recipe for polishing the lower layer under a closed loop control mode.

Abstract: A method and apparatus of planarizing substrates is disclosed. A planarizing web medium is prepared for planarizing substrates to reduce defect generation. The planarizing web has a planarizing region and preparing region defined thereon, wherein at least one portion of the preparing region is outside the planarizing region. The web medium is advanced to move one portion of the web out of the planarizing region and another portion into the planarizing region.

Abstract: A chemical mechanical polishing to polish a substrate having a layer to be polished thereon is described. A pre-polishing process is performed using a softer polishing pad to remove partially raised parts of the layer to be polished before conducting a polishing process using a harder polishing pad. Since the first polishing pad is flexible, porous and with low density, the first polishing pad can be deformed to increase contact areas between the first polishing pad and the raised part of the layer to be polished, and the abrasives are embedded easily in holes of the surface of the first polishing pad. Ultimately, the layer to be polished can be polished directly during the pre-polishing process. Therefore, the processing time is reduced, the consumption of the slurry is decreased and the process cost can be cut down substantially.

Abstract: A material removal optimizing system for a wood surface treating apparatus with a plurality of individual work stations arranged serially along an endless conveyor. Each station includes a working abrasive head along with an elevation adjustment mechanism for adjustably positioning the contact surface of each abrasive head at a desired working distance from the opposed surface of the workpiece traveling along the endless conveyor. An incoming workpiece dimension indicator is positioned at the infeed end, and additional workpiece dimension indicators are positioned downstream from each work station, with each dimension indicator being positioned to measure the dimensional deviation of the workpiece from a datum plane after it has passed through its preceding individual work station.

Abstract: A chemical/mechanical polishing method for polishing an object to be polished with an irregular surface, having a substrate with convexities and concavities, a stopper layer formed on the convexities of the substrate, and an embedded insulating layer formed to cover the concavities of the substrate and the stopper layer, wherein the method is characterized comprising a first polishing step of flattening the embedded insulating layer using a slurry (A) which can maintain the polishing speed at 500 Å/min or less and a second polishing step of further polishing the embedded insulating layer to cause the stopper layer on the convexities to be exposed using a slurry (B) which can maintain the polishing speed at 600 Å/min or more. The method is useful for flattening wafers during shallow trench isolation (STI) in manufacturing semiconductor devices.

Abstract: The invention discloses a method for the chemical-mechanical polishing of layers composed of metals of the group of platinum metals, particularly iridium. In the CMP process, high erosion rates for iridium and a high selectivity relative to silicon oxide are achieved upon employment of a polishing fluid that contains 1 through 6% by weight abrasive particles, 2 through 20% by weight of at least one oxidation agent selected from the group comprising Ce(IV) salts, salts of chloric acid, salts of peroxodisulfuric acid, hydrogen peroxide and salts of hydrogen peroxide, and 74 through 97% by weight water. This enables the structuring of iridium layers with the assistance of an oxide mask and a CMP process.

Abstract: The present invention discloses a workshop unit for use as a grinding center that includes a support frame having a drive motor and a multi-station tool mounted thereto. Particularly, the grinding center may be used for operations including but not limited to grinding, buffing, polishing, sanding, and cleaning. The multi-station tool includes a plurality of rotary tools, a power transfer system, and a rotary tool selecting system. The power transfer system operates through a plurality of pulleys each in communication with at least one rotary tool and the drive motor through a plurality of transmission links. The rotary tool selecting system, which includes one or more control shafts and a clutch system, allows each tool to be selectively and independently operated.

Abstract: A method and apparatus for mechanically and/or chemical-mechanically planarizing and cleaning microelectronic substrates. In one embodiment, a processing medium for planarizing and finishing a microelectronic substrate has a planarizing section with a first body composed of a first material and a finishing section with a second body composed of a second material. The first body may have a relatively firm planarizing surface to engage the substrate, and the first body supports abrasive particles at the planarizing surface to remove material from the substrate during a planarizing cycle. The second body may have a relatively soft buffing or finishing surface clean the abrasive particles and other matter from the substrate during a finishing cycle. The planarizing and finishing sections may be fixedly attached to a backing film, or they may be attached to one another along abutting edges with or without the backing film.

Abstract: A process for machining a wafer-like workpiece between two plates, in which material is abraded from the workpiece under the influence of an auxiliary substance supplied and of a pressure acting on the workpiece. In this process, the pressure on the workpiece is significantly reduced and then increased again at least once during the machining of the workpiece, and the supply of the auxiliary substance is reduced as the pressure is increased.

Abstract: A method of polishing a surface of a glass, ceramic, or glass-ceramic substrate to minimize the waviness, waviness variation, and average surface roughness of the surface, whereby the substrate is usable for a magnetic or magneto-optical (MO) data/information storage retrieval medium, comprising sequential steps of: (a) performing a primary polishing of the substrate surface in a first polishing apparatus, utilizing a first polishing slurry containing particles of a first abrasive; (b) transferring the substrate to a second polishing apparatus; and (c) performing a final polishing of the substrate surface in the second polishing apparatus, utilizing a second polishing slurry containing particles of a second abrasive, the particles of the second abrasive being smaller than the particles of the first abrasive.

Abstract: A method of grinding cutting blades with a grinding wheel having first and second grinding edges. The method comprises rough grinding at least one surface of the cutting blade with the first grinding edge and finish grinding at least one surface of the cutting blade with the second grinding edge.

Abstract: A method is disclosed in which the component is rotated through only one revolution during a finish grinding step, and the depth of cut and the headstock (12) velocity are controlled during the signal rotation, so as to maintain a substantially constant load on the grinding wheel spindle drive motor (28, 30). Preferably the depth of cut is kept constant and the component speed of rotation is altered in order to maintain the constant power requirement, without exceeding the maximum power capability of the spindle motor. The component speed is altered from one point to another during each revolution so as to maintain the constant load. In another method, the headstock (12) velocity is linked to the power capabilities of the grinding wheel spindle drive (28, 30), and a significant grinding force is maintained between the wheel and the component up to the end of the grinding process including during finish grinding.

Abstract: A grinding machine (10) for double-sided grinding of tooth flanks, in particular hard-metal tipped circular saw blades (14) is described. The grinding machine comprises two grinding units (16, 18) each with a grinding body, a first drive to move at least one of the two grinding units (16, 18) along a first axis (x1, x2) running perpendicular to a plane containing the saw blade (14) and also a second drive (36) to move at least one of the two grinding units (16, 18) along a second axis (z) running parallel to axes of rotation of the grinding bodies. Furthermore a third drive (38) is provided to move at least one of the two grinding units (16, 18) along a third axis (y) running parallel to the first (x1, x2) and the second (y) axis. A control method according to the invention for the grinding machine (10) provides that a tangential clearance angle of a tooth is varied along a tooth flank during the grinding of the tooth.

Abstract: A method and apparatus of planarizing substrates is disclosed. A planarizing web medium is prepared for planarizing substrates to reduce defect generation. The planarizing web has a planarizing region and preparing region defined thereon, wherein at least one portion of the preparing region is outside the planarizing region. The web medium is advanced to move one portion of the web out of the planarizing region and another portion into the planarizing region.

Abstract: A process is for material-removing machining, on both sides simultaneously, of semiconductor wafers having a front surface and a back surface, the semiconductor wafers resting in carriers which are set in rotation by means of an annular outer drive ring and an annular inner drive ring and being moved between two oppositely rotating working disks in a manner which can be described by means of in each case one path curve relative to the upper working disk and one path curve relative to the lower working disk, wherein the two path curves after six loops around the center have the appearance of still being open, and at each point have a radius of curvature which is at least as great as the radius of the inner drive ring.

Abstract: An abrading machine is disclosed for abrasion of substantially plane items by use of rotating abrading discs, which are moved simultaneously forwards and backwards transverse to the item and which preferably has downward extending abrasive lamellae. The machine also preferably includes one, typically two, opposite rotating abrading cylinders fitted with elongated abrasive elements radially mounted on the abrading cylinder and has abrasive lamellae extending outwards from the cylinder. By moving the abrading discs in a reciprocatory movement transverse to the direction of feed of the items it is achieved that traces etc. from the different abrasive properties of the abrading discs are eliminated as well as all parts of milled out areas etc. are evenly abraded, particularly if the abrading device is designed for using abrading discs with abrasive means comprising abrasive lamellae made of abrasive cloth and which extend downwards from the face of the abrading disc.

Abstract: A dressing block for dressing or finishing a work surface has an abrasive surface with abrasive parallel ribs. The ribs of the dressing block are for slidingly engaging a work surface having a pattern of protuberances separated by intersecting recesses. The abrasive surface of the ribs and the grooves between the ribs slidingly engage the protuberances and the recesses to dress the work surface. The user slides the dressing block relative to the work surface in a first direction to engage a first set of the recesses. The user then slides the dressing block in a second direction to engage the second set of recesses.

Abstract: A method of lathing a lens, especially a contact lens, involves attaching the cylindrical blank of lens material to a first block of machineable plastic material, lathe cutting a desired first lens surface in the cylindrical blank, attaching the machined first lens surface of the blank to a second block, lathe cutting to remove the block of machineable plastic material, and lathe cutting a desired second lens surface in the blank. Both the first and second blocks may be adhered to the lens blank with an adhesive curable by ultraviolet radiation, and a two-piece block, composed of a head section and a body section, is disclosed.

Abstract: A grinding apparatus for grinding a spline ball groove on a workpiece comprises a rod-shaped grindstone, having a distal end portion with a curved surface corresponding to the groove to be ground, and a spindle mechanism for rotating the grindstone. The spindle mechanism and the grindstone are supported by means of a supporter in a manner such that they are inclined at a given angle to an axis of the workpiece. A rotary dresser, which has a dress groove corresponding to the curved surface of the distal end portion of the grindstone, is disposed near the grinding apparatus. The grindstone can be reciprocated along the axis of the workpiece by a drive mechanism between the workpiece and the dresser without changing its angle of inclination.

Abstract: A continuous CMP process for polishing multiple conductive and non-conductive layers on a semiconductor substrate. The continuous process comprises the steps of: (a) disposing a substrate on a platen; (b) polishing a first layer using both a mechanical means and a chemical means; and (c) polishing a second layer upon adjusting at least one parameter in either the mechanical means, chemical means, or both.

Abstract: A method and apparatus for endpointing a planarization process of a microelectronic substrate. In one embodiment, the apparatus may include a species analyzer that receives a slurry resulting from the planarization process and analyzes the slurry to determine the presence of an endpointing material implanted beneath the surface of the microelectronic substrate. The species analyzer may include a mass spectrometer or a spectrum analyzer. In another embodiment, the apparatus may include a radiation source that directs impinging radiation toward the microelectronic substrate, exciting atoms of the substrate, which in turn produce an emitted radiation. A radiation detector is positioned proximate to the substrate to receive the emitted radiation and determine the endpoint by determining the intensity of the radiation emitted by the endpointing material.

Abstract: When a device wafer is chucked and is rotated about an axis thereof, arc-shaped work faces of first and second inclined-face-polishing members are brought into line-contact with inclined faces disposed at front and rear faces, respectively, of the device wafer, the arc-shaped work face of a peripheral-face-polishing member is brought into line-contact with a peripheral face of the device wafer, and a disc-shaped work face of a peripheral-edge-polishing member is brought into planar contact with the front face of the device wafer at a peripheral edge thereof, whereby the inclined faces, the peripheral face, and the peripheral edge are polished simultaneously by the respective polishing members. Thus, an unnecessary part of a metallic film is removed from the periphery of the device wafer.

Abstract: In a polishing apparatus having a cover body with fluid pressing mechanism, during polishing, vibration and migration of sticking portion between a retainer and a membrane generated in downstream of rotation of a polishing platen is prevented by reducing sticking force between the retainer and the membrane to less than force needed to wafer polishing with rotation of the cover body.