Abstract: A multispindle pedestal grinder includes: a head block, an indexable head rotatably supported by the head block, three spindles rotatably supported by the indexable head, the axes of rotation of the spindles being parallel to one another and to the axis of rotation of the indexable head, a source of rotating power such as an electric motor; and a belt drive selectively coupling only: a first one of the spindles to the source of rotating power when the indexable head is in a first index position; a second one of the spindles to the source of rotating power when the indexable head is in a second index position; and a third one of the spindles to the source of rotating power when the indexable head is in a third index position.

Abstract: Methods and compositions are provided for planarizing a substrate surface with reduced or minimal topographical defect formation during a polishing process for dielectric materials. In one aspect a method is provided for polishing a substrate containing two or more dielectric layers, such as silicon oxide, silicon nitride, silicon oxynitride, with at least one processing step using a fixed-abrasive polishing article as a polishing article. The processing steps may be used to remove all, substantially all, or a portion of the one or more dielectric layers, which may include removal of the topography, the bulk dielectric, or residual dielectric material of a dielectric layer in two or more steps.

Abstract: The present invention is directed to a method of modifying a wafer surface comprising providing a first abrasive article comprising a first three-dimensional fixed abrasive element and a first subpad generally coextensive with the first fixed abrasive element, contacting a surface of the first three-dimensional fixed abrasive element with a wafer surface, and relatively moving the first abrasive article and the wafer. The method additionally provides providing a second abrasive article comprising a second three-dimensional fixed abrasive element and a second subpad generally coextensive with the second fixed abrasive element, contacting a surface of the second three-dimensional fixed abrasive element with the wafer surface, and relatively moving the second abrasive article and the wafer. Wherein the first subpad has a deflection less than the deflection of the second subpad when measured 1.5 cm from the edge of a 1 kg weight, the weight having a contact area of 1.9 cm diameter.

Abstract: The present invention provides an abrasive article formed of a binder, abrasive particles associated with the binder, and a lubricating particulate additive comprising polytetrafluoroethylene associated with the binder. The abrasive article of the invention is useful in the polishing of fiber optic connectors because the lubricating particulate additive allows the polishing rate of the softer glass fiber material to be slower than the polishing rate of the harder ceramic ferrule material. Methods of manufacture and methods of polishing a fiber optic connector is also provided.

Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.

Abstract: There is provided a method of polishing a glass substrate for information recording media which enables polishing to be carried out such that the product quality is improved, without the productivity dropping, and without the processing cost increasing. A precision polishing step has a first polishing step and a second polishing step carried out in this order, in which, after carrying out rough polishing on major surfaces of a glass substrate, precision polishing is carried out on the major surfaces by feeding abrasive grains onto the major surfaces, pushing polishing members against the major surfaces, and rotating the major surfaces and the polishing members relative to one another. At least one of the first polishing step and the second polishing step has a preceding polishing step and a succeeding polishing step carried out in this order.

Abstract: The invention relates to a method for re-profiling the running surface of a rail, preferably the convex portion of the rail head cross-profile of a rail, especially a railway rail, by peripheral milling. The aim of the invention is to obtain a profile that meets the requirements and has few corrugations. To this end, for producing the profile in a single peripheral grinding step, more than five, preferably nine milling tracks are produced that are oriented in parallel to the longitudinal direction of the rail. Optionally, the running surface, preferably the convex portion of the rail head cross-profile including the running surface is ground afterwards.

Abstract: In one illustrative embodiment, the method comprises providing a plurality of wafer lots, each of the lots comprising a plurality of wafers, performing at least one process operation on at least some of the wafers in each of the plurality of lots, identifying processed wafers having similar characteristics, re-allocating the wafers to lots based upon the identified characteristics, and performing additional processing operations on the identified wafers having similar characteristics in the re-allocated lots. In one illustrative embodiment, the system comprises a first processing tool for performing processing operations on each of a plurality of wafers in each of a plurality of wafer lots, a controller for identifying processed wafers having similar characteristics and re-allocating the wafers to lots based upon the identified characteristics, and a second processing tool adapted to perform additional processing operations on the identified wafers having similar characteristics in the re-allocated lot.

Abstract: A portable precision flange grinder grinds a flange on a duct. The flange has an axis, a radius, and a periphery. A mount mounts the grinder within the duct. The mount attaches to openings at ends of the duct. A grinding wheel grinds a flange on a duct and arranged to rotate along a periphery of the flange. A first linkage translates the grinding wheel along an axis of the flange to bring the grinding wheel laterally in grinding contact with the flange. The first linkage engages with the mount along an axis of the flange. A second linkage translates the grinding wheel along a radius of the flange bringing the grinding wheel radially in grinding contact with the flange. The second linkage attaches to the first linkage. A bearing assembly rotates the grinding wheel about the periphery of the flange. The bearing assembly is attached to the first linkage.

Abstract: Methods and apparatus for chemical mechanical planarization of an article such as a semiconductor wafer use polishing slurries including a carbon dioxide solvent or a carbon dioxide-philic composition. A carbon dioxide cleaning solvent step and apparatus may also be employed.

Abstract: A grinding pin (53) for grinding notches in the edges of disc workpieces, such as semi-conductor wafers, comprises a metal spindle (132) for mounting in a grinding machine, and an adjoining cylindrical region having axially spaced sections of fine grit (160) and rough grit (162), the latter being axially nearer the spindle (132). In use on a grinding machine having a rotatable forming wheel, similar profiled notch-grinding grooves (140) and (142) are formed by the wheel in the grinding sections (162) and (160) respectively.

Abstract: In an apparatus in which when a photothermographic material is produced, a photosensitive layer liquid coating composition including a silver component and a non-photosensitive protective layer liquid coating composition are applied onto a web employing a slot coater, a coating apparatus for producing a photothermographic material wherein the slot coater is constituted so that the center-line surface roughness Ra of the lip plane, which comes into contact with at least the photosensitive layer liquid coating composition, is equal to or less than 0.5 &mgr;m.

Abstract: A method for preventing or reducing corrosion of copper containing features included in a semiconductor wafer in a chemical mechanical polishing (CMP) process including providing a semiconductor wafer polishing surface including copper filled anisotropically etched features; polishing the semiconductor wafer polishing surface according to a first CMP process including applying at least one polishing slurry to contact the semiconductor wafer polishing surface for removing an uppermost layer of the semiconductor wafer polishing surface; and, alternately applying a copper corrosion inhibitor solution for a period of time and the at least one polishing slurry for a period of time to contact the semiconductor wafer polishing surface to comprise a polishing cycle said polishing cycle performed at least once during at least a second CMP process.

Abstract: A finishing grindstone member (20) is fixed to a spindle (10) by a bolt. In the spindle (10), there is formed a tool mounting portion (25) into which a rough grindstone member can be mounted. Into the tool mounting portion (25), there can be mounted not only the rough grindstone member but also a cover member (36). After a silicone wafer is roughly ground using the rough grindstone member, when finish grinding the silicone wafer using the finishing grindstone member (20), the cover member (36) is mounted onto the tool mounting portion (25) to thereby prevent the tool mounting portion (25) from being soiled.

Abstract: A dresser is used which makes it possible to simultaneously dress and condition the surface of a polishing pad deteriorated by polishing a semiconductor wafer in the CMP process. The dresser is a dresser comprised of a ceramic such as dressing SiC, SiN, alumina or silica. Use of this dresser enables to shorten the time of dressing/conditioning the deteriorated polishing pad.

Abstract: A device is disclosed for edge-machining an optical lens, clampable between two aligned holding shafts rotatable about the rotational axis of a workpiece, having a Z slide, which is guided longitudinally displaceably on a base frame in a Z direction parallel to the rotational axis of the workpiece, and an X slide bearing a tool post with an edge-machining tool, which is guided longitudinally displaceably on the Z slide in an X direction perpendicular to the Z direction in such a way that the edge-machining tool may be brought into machining engagement with the optical lens. For industrial use, the base frame is of substantially O-shaped construction and surrounds the Z slide, wherein the Z slide is likewise of substantially O-shaped construction and surrounds the X slide.

Abstract: A solution for rinsing a surface that has been planarized using a chemical-mechanical planarization (“CMP”) technique. The solution may be a surfactant solution introduced following the use of a polishing solution in the CMP technique. The surfactant solution acts to clear undesirable particles from the planarized surface and also can terminate “latent” effects from the polishing solution. A cleaning solution is generally injected after the rinsing solution for additional cleaning effects. A plate covered with a textured material such a fabric is usually applied to the surface during the polishing, rinsing, or cleaning steps.

Abstract: A method and composition for planarizing a substrate surface having a barrier layer disposed thereon. In one aspect, the invention provides for planarizing a substrate surface having a barrier layer and a copper containing material disposed thereon including chemical mechanical polishing the substrate to selectively remove excess copper containing material, chemical mechanical polishing the substrate to selectively remove residual copper containing material and a portion of the barrier layer, and chemical mechanical polishing the substrate to selectively remove residual barrier layer.

Abstract: To provide a method of and an apparatus for grinding a brake pad in which inclined faces at both ends of the brake pad can be ground along a single route and no grinding limit quantity is generated whether the boundary lines are parallel with each other or not. The apparatus according to the present invention comprises: a fixing portion 11 for fixing a brake pad 3; a rotary whetstone 21 having a rotation axis parallel to a friction face 3a of the brake pad 3, a grinding face of which distance to the rotation axis increases gradually or in plurality of steps in one direction of the rotation axis, and another grinding face of which distance to the rotation axis decreases gradually or in plurality of steps in the one direction of the rotation axis; and a transporter 10 for moving one of the brake pad and the rotary whetstone in relation to each other in a intersecting direction to the rotation axis.

Abstract: In manufacturing a magnetic tape, a long web of non-magnetic base material is coated with a magnetic layer and, thereafter, subjected to a smoothing process, wherein the surface of the magnetic layer is abraded, ground, and then wiped out. For grinding, sapphire blades are kept in contact with the surface of the magnetic layer with their edges oriented in a transverse direction to the magnetic tape, and are moved back and forth in the transverse direction to the magnetic tape, while the magnetic tape is being conveyed in a lengthwise direction of the magnetic tape. Of the sapphire blades, adjacent two are moved in opposite directions to each other.

Abstract: The invention relates to a method for grinding convex running surfaces and exact outside diameters on undulated workpieces. In a clamping, a first convex running surface is ground on a discoid partial section of an undulated workpiece during a first grinding operation while using a first grinding wheel that comprises at least one concave lateral surface. A second grinding wheel is used to grind a desired outside diameter on the discoid partial section as well as on other partial sections of the undulated workpiece during a second grinding operation.

Abstract: A processing tool is used to carry out a fixed-abrasive grinding process on a surface of a silicon work-piece. The processing tool includes abrasive grains made up silica grains. A primary average grain size of the silica grains is desirably 0.8 nm to 10 &mgr;m.

Abstract: A grinding machine is disclosed comprising a main frame, a wheelhead, a worktable (16), a headstock (12) and tailstock (14) carried by the worktable (16). A computer is supplied with data indicative of at least one operational parameter of the grinding proces, and the wheelfeed is under the control of signals generated by the computer. Two small diameter grinding wheels (22, 24) are mounted on two parallel spindels mounted on a support member (32) and are independently driven by two motors (28, 30) mounted at the other ends of the spindles. The support member (32) is pivotally joined to the wheelhead. The headstock (12) includes a workpiece drive (20) for rotating the workpiece during a grinding, and its speed of rotation is also controlled by signals generated by the computer. The length of the spindles positions each of the motors (28, 30) axially clear of the tailstock assembly when the wheels (22, 24) are aligned to engaged regions of a workpiece nearest to the headstock (22).

Abstract: A method for characterizing planarizing properties of a selected expendable material combination in a chemical-mechanical polishing process includes steps of: providing a combination of expendable materials including a softcloth and a polishing agent; providing test substrates with test patterns with different feature densities; performing a polishing process for each of the test substrates while the respective combination of the values for the processing parameters (pressure and velocity) is maintained until saturation is achieved; determining a characteristic quantity for the global grade level from the test substrates that have been polished; and determining expendable material parameters that characterize the planarizing properties for the selected expendable material combination from a functional relationship between the characteristic quantity for the global grade level to a quotient of the relative velocity and the pressure for each one of the test substrates.

Abstract: A reliable, inexpensive “back side” thinning process, capable of globally as well as locally thinning an integrated circuit die to a target thickness of 10 microns, and maintaining a yield of at least 80%, for chip repair and/or failure analysis of the packaged die. The flip-chip or wire-bond packaged die is mounted on a thinning/polishing tool with the backside accessible. The thinning/polishing tool can be a lapping machine used for global thinning, or a mini milling machine, laser, FIB, or E-beam machine for local thinning. The thickness of the die is measured at at least five locations on the die before thinning. The thinning tool removes silicon on the exposed surface of the die to a thickness somewhat greater than the target thickness. The exposed surface of the die is polished. The thickness of the die is again measured optically with high accuracy.

Abstract: A semiconductor wafer dividing method for dividing a semiconductor wafer, in which a plurality of rectangular regions are demarcated by streets arranged in a lattice pattern on the face of the semiconductor wafer, and a semiconductor circuit is disposed in each of the rectangular regions, into the individual rectangular regions. This method includes a groove cutting step of cutting the face of the semiconductor wafer along the streets to form grooves along the streets on the face of the semiconductor wafer, and a back grinding step of grinding the back of the semiconductor wafer to reduce the thickness of the semiconductor wafer to not more than the depth of the grooves, thereby dividing the semiconductor wafer along the streets. This method further includes, before the back grinding step, a groove depth measuring step of measuring the depth of the grooves.

Abstract: A planatizing equipment has solid abrasive particles suspended in a liquid suspension. The solid abrasive particles have on their outer surfaces tiny, hard but brittle working edges and points. The liquid suspension medium and the solid abrasive particles have nearly the same density to prevent the brittle working edges and paints from sufficiently contacting and damaging each other. This significantly lengthens the useful life of the solid abrasive particles.

Abstract: A chemical mechanical polishing method for polishing an oxide film and a protective film formed on a substrate having recesses comprises four steps. The first step planarizes the oxide film using a polishing pad and a polishing agent containing cerium oxide particles by causing relative rotational motion between the substrate and the polishing pad. The second step continues polishing the oxide film to maintain the planarized property of the oxide film. The third step polishes the oxide film until at least a portion of the protective film becomes exposed. The fourth step polishes the oxide film until the oxide film is substantially removed and the protective film is substantially exposed. During the four steps, torque values are measured on the substrate or the polishing pad, and changes in torque with time are calculated. This information is used to determine the status of each of the steps during the polishing run.

Abstract: A reliable, inexpensive “back side” thinning process, capable of globally thinning an integrated circuit die to a target thickness of 10 microns, and maintaining a yield of at least 80%, for chip repair and/or failure analysis of the packaged die. The flip-chip packaged die is exposed at its backside and mounted on a lapping machine with the backside exposed. The thickness of the die is measured at at least five locations on the die. The lapping machine grinds the exposed surface of the die to a thickness somewhat greater than the target thickness. The exposed surface of the die is polished. The thickness of the die is again measured optically with high accuracy. Based on the thickness data collected, appropriate machine operating parameters for further grinding and polishing of the exposed surface are determined. Further grinding and polishing are performed. These steps are repeated until the target thickness is reached.

Abstract: A working robot is used in space for inspecting the state of a structure of a house module in space or for replacing M/D shields. A robot body is provided with four multifunctional arms (or two moving arms and two multifunctional arms), which are equipped with manipulation tools at their leading ends. The robot is moved by the manipulation tools of each of the multifunctional arms gripping a working socket or the head of a bolt of an M/D shield and by the arms extending/contracting themselves. The M/D shield is fixed and lifted by the multifunctional arms 10 by inserting the manipulation tool into a T-handle socket. The bolts are removed by the manipulation tool of the multifunctional arms.

Abstract: An invention is provided for removing a top wafer layer during a CMP process. Time series data is collected based on a reflected wavelength from a top layer of a wafer. A Fourier Transform is applied to the time series data, and a frequency of peak intensities in the Fourier Transform of the time series data is analyzed to determine a peak magnitude in the frequency. A first removal rate of the top layer is determined based on the peak magnitude in the frequency, and a current thickness of top layer is calculated based on the first removal rate. The CMP process is discontinued when the current thickness of the top layer is equal to or less than a target thickness, and a separate polishing process is performed to remove an additional portion of the top layer. In one aspect, the separate polishing process can be based on a soft endpoint detection process having second removal rate that is lower than the first removal rate.

Abstract: A single-sided finishing apparatus is provided having a plurality of finishing stations with rotating transfer stations positioned therebetween. A hold down system presents the edge of the workpiece to the finishing head. The rotating transfer station includes a clamp for grasping a leading corner of a workpiece while rollers continue to drive the workpiece forward, thereby rotating the workpiece 90°.

Abstract: An improved chemical mechanical polishing apparatus for planarizing semiconductor surface materials. The single rotating polishing platen with an attached pad of conventional CMP processes is replaced with two controlled independently driven, concentric and coplanar, polishing platens. The two co-planar polishing platens allows for separate adjustable options to the CMP polishing process. The options are provided by having pads of different material compositions and hardness. Moreover, an annular space is provided between the platens to introduce the usage of two slurry formulations, one to each pad, on the same CMP tool. The annular space between platens forming a drain path for catching and containing slurry waste.

Abstract: A half toroidal CVT disk having an inner surface portion, an outer surface portion and a toroidal surface having a given machining allowance is centered with said inner surface portion worked prior to the heat treatment of said half toroidal CVT disk as the standard thereof, and then is chucked by a chuck mechanism. The toroidal surface of the chucked half toroidal CVT disk is ground by a grinding mechanism with the grinding wheel for grinding the half toroidal CVT disk in a state that one of said half toroidal CVT disk and said tool is inclined at a given angle with respect to the other.

Abstract: At the conclusion of chemical mechanical polishing (CMP) there is found to be a topography difference at the periphery of the wafer. For example, for a 200 mm wafer, the oxide surface in a peripheral region up to 20 mm wide, may end up about 1,000 Å above or below the central portion of the surface. This problem has been overcome by varying the type of polishing pad and retainer ring from one CMP operation to the next. Thus, if the equipment that is used to effect a given CMP step results in a post CMP surface in which the periphery of the wafer is higher than the center, CMP equipment for the next layer is selected that, operating alone, would result in a surface in which the periphery of the wafer is lower than the center. The two CMP operations thus cancel each other and a uniformly flat final surface results. The conditions required to produce either surface topography are described and discussed.

Abstract: A method of cleaning a probe card with probe pins contaminated by testing residue. A cleaning wafer is provided and the uneven surface and the grooves thereon are used to polish surfaces of the probe pins. Two kinds of cleaning operations, which utilize smaller and larger accelerations driving the cleaning wafer, are performed. The cleaning operations utilizing the smaller acceleration are used to polish the surfaces of the probe pins and the cleaning operations utilizing the larger acceleration are used to smooth the uneven surfaces of the probe pins after the former polishing operations. In addition, the cleaning wafer is rotated by various rotation angles to obtain superior cleaning.

Abstract: An improved polishing pad (22) for use in a chemical mechanical polishing (CMP) operation as part of a semiconductor device fabrication process. The polishing pad is formed of a plurality of particles of abrasive material (24) disposed in a matrix material (26). The abrasive particles may be a stiff inorganic material coated with a coupling agent, and the matrix material may be a polymeric material such as polyurethane. As the polishing pad wears through repeated polishing operations, the newly exposed polishing surface will contain fresh abrasive particles and will exhibit the same polishing properties as the original surface, thereby providing consistent polishing performance throughout the life of the pad without the need for conditioning operations. In one embodiment the distribution of particles of abrasive material per unit volume of matrix material may vary from one portion (23) of the pad to another (25).

Abstract: Deposited Cu is initially removed by CMP with fixed abrasive polishing pads stopping on the barrier layer, e.g., Ta or TaN. Buffing is then conducted selectively with respect to Cu: Ta or TaN and Cu: silicon oxide to remove the barrier layer and control dishing to no greater than 100 Å.

Abstract: Methods and apparatuses for planarizing a microelectronic substrate. In one embodiment, a planarizing pad for mechanical or chemical-mechanical planarization includes a base section and a plurality of embedded sections. The base section has a planarizing surface, and the base section is composed of a first material. The embedded sections are arranged in a desired pattern of voids, and each embedded section has a top surface below the planarizing surface to define a plurality of voids in the base section. The embedded sections are composed of a second material that is selectively removable from the first material. A planarizing pad in accordance with an embodiment of the invention can be made by constructing the embedded sections in the base section and then removing a portion of the embedded sections from the base section. By removing only a portion of the embedded sections, this procedure creates the plurality of voids in the base section and leaves the remaining portions of the embedded sections.

Abstract: A polishing apparatus has a turntable with a polishing cloth attached thereto and a top ring for holding and pressing a workpiece to be polished against the polishing cloth under a certain pressure. The polishing apparatus also has a first dressing unit having a contact-type dresser for dressing the polishing cloth by bringing the contact-type dresser in contact with the polishing cloth, and a second dressing unit having a noncontact-type dresser for dressing the polishing cloth with a fluid jet applied therefrom to the polishing cloth. The contact-type dresser comprises a diamond dresser or an SiC dresser.

Abstract: A fluid delivery system is provided for delivering a fluid to a polishing surface of a chemical mechanical polishing tool. The system includes a platen, manifold and slurry delivery conduit. The platen has a plurality of conduits for allowing a fluid to pass to the polishing surface. The manifold, through the use of a plurality of channels, controls the fluid distribution to the conduits in the platen. The channel cross-sectional area at substantially every point is greater than, preferably 1.5 to 2 times, the combined cross-sectional area of all the conduits being serviced by the channel. This results in the conduits being the most restrictive feature and a uniform pressure within the manifold. However, the volume of the channels should also be reduced as this reduces the time necessary for a fluid change over. The slurry delivery conduit communicates fluid from a fluid source to the channels in the manifold.

Abstract: A method of improving uniformity control in chemical mechanical polishing (CMP). A CMP apparatus is provided with at least a platen, a polishing pad disposed on the platen and at least a polishing carrier installed over the platen. The platen rotates in a first rotating direction, and the polishing carrier is used to press a wafer on the polishing pad and drive the wafer to rotate. First, in a first-CMP step, the polishing carrier rotates in a second rotating direction. Then, in a second-CMP step, the polishing carrier rotates in a third rotating direction different from the second rotating direction.

Abstract: A system and method are provided that maintains a high pH at the wafer surface through the entire polish process and then lowers the pH only when necessary in a controlled fashion after CMP and during the post-polish clean. A fluid having a high pH chemistry and, optionally, surfactants is used instead of deionized water to keep the wafer and polisher components wet and to clean the slurry residue from the polishing pad.

Abstract: An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.

Abstract: In chemical mechanical polishing, a substrate is planarized with one or more fixed-abrasive polishing pads. Then the substrate is polished with a standard polishing pad to remove scratch defects created by the fixed-abrasive polishing pads.

Abstract: A fiber optic ferrule polishing devise comprising a disk having an outer periphery and a center. Rings having a polishing surface coated with varying degrees of abrasive and attached to the disk such that the courseness of abrasive on the rings decreases from the outer periphery to the center. A ferrule holder having a ferrule holding recess adjacent to the polishing surface, a water injecting recess and an attachment arm pivotally attached to the ferrule holder such that the arm is positioned adjacent to the ferrule holding recess. A holding plate having a ferrule end face receiving recess having a smaller diameter than the ferrule holding recess and positioned adjacent to the ferrule holding recess and polishing surface. A mounting plate for mounting the ferrule holder a predetermined distance from the polishing surface. The arm biases a ferrule toward the polishing surface when a ferrule is received in the ferrule holding recess.

Abstract: The present invention is directed to a method of controlling polishing processes based upon x-ray fluorescence measurements. In one illustrative embodiment, the method comprises providing a wafer comprised of a layer of insulating material having a barrier metal layer formed thereabove and a layer of copper formed above the barrier metal layer, performing a chemical mechanical polishing operation to remove the barrier metal layer, irradiating at least one area of the wafer with x-rays, and analyzing x-rays leaving the irradiated area to determine the presence of material comprising the barrier metal layer.

Abstract: An apparatus for grinding wafers includes a grind chuck, formed of a soft material having a high elastic modulus, formed on a grind table. A grind unit grinds the wafer held by the grind chuck. Deionized water is supplied onto the wafer by a supply duct. A dam is formed on the grind table to surround the grind chuck, so that the wafer and the grind unit are submerged during grinding of the wafer. Also, an exhaust hole is formed through the grind table within an area surrounded by the dam, to exhaust the deionized water from the area surrounded by the dam.

Abstract: A flatness of a substrate is determined to achieve a desired flatness of a mask blank by predicting the variation in flatness resulting from a film stress of a thin film formed on the substrate. The flatness is adjusted by measuring the flatness of the substrate as a measured flatness, selecting a load type with reference to the measured flatness, and polishing the substrate under pressure distribution specified by the load type. A principal surface of the substrate has a flatness greater than 0 &mgr;m and not greater than 0.25 &mgr;m. A polishing apparatus includes a rotatable surface table, a polishing pad formed thereon, abrasive supplying means for supplying an abrasive to the polishing pad, substrate holding means, and substrate pressing means for pressing the substrate. The substrate pressing means has a plurality of pressing members for individually and desirably pressing a plurality of divided regions of the substrate surface.

Abstract: 9 In accordance with certain aspects of the invention, an exemplary claim can define the steps of providing a rotating mount for the initially cast prosthesis in association with a numerically or computer controlled grinding machine. The grinding wheel is rotatably supported so that the wheel can translate vertically and axially relative to the axis of the workpiece, and can pivot in a plane generally parallel to the axis of the workpiece. In one step, the stem of the workpiece is rotated as the grinding wheel is held in position substantially perpendicular to the axis of the stem. The grinding wheel is then retracted and repositioned along the length of the stem through a series of successive positions. At each position, the grinding wheel is rotated in contact with the rotating workpiece. Once the grinding wheel is positioned at the transition region, the workpiece is preferably rotated through 180° on both sides of the transition region.