Abstract: A method and associated system provides automated abrasive paint repair using automated abrasive paint repair devices that selectively sand, buff, and polish a substrate in response to received instructions generated by a controller. The controller receives coordinates of each identified defect in the substrate along with parameters describing characteristics of each defect, selects a sanding process, a buffing process, and/or a polishing process based on empirically derived rules established by skilled/expert human operators and the received parameters. The controller outputs instructions to cause the automated abrasive paint repair devices to execute the selected sanding process, buffing process, and/or polishing process using the received parameters. The empirically derived rules and parameters may be stored in a lookup table and/or updated by a machine learning module.

Abstract: A method for automating a die fabrication process includes obtaining, by one or more controllers, die sensor data from one or more die sensors and image data from one or more image sensors, generating, by the one or more controllers, a command to perform one or more machining tool operations based on the die sensor data and the image data, and controlling, by the one or more controllers, a machining tool to perform the one or more machining tool operations. The method includes selectively adjusting, by the one or more controllers, a position of a robotic arm based on the one or more machining tool operations and training an artificial intelligence system to autonomously perform the die fabrication process based on the one or more machining tool operations, the position of the robotic arm, the image data, the die sensor data, or a combination thereof.

Abstract: A chemical mechanical polishing system includes a support to hold a polishing pad, a carrier head to hold a substrate against the polishing pad during a polishing process, an in-situ monitoring system configured to generate a signal indicative of an amount of material on the substrate, a temperature control system to control a temperature of the polishing process, and a controller coupled to the in-situ monitoring system and the temperature control system. The controller is configured to cause the temperature control system to vary the temperature of the polishing process in response to the signal.

Abstract: Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.

Abstract: A method for coordinating an identification of a defect in the surface coating of a workpiece and processing same via grinding and/or polishing using at least one grinding or polishing tool that is moveable over the defect in an automatic and computer-controlled manner based a stored program is provided. The surface coating of the workpiece is automatically optically scanned and the scanned position data is detected in a database. The defect is identified by comparing the detected position data with stored target data of the workpiece. Possible movements of the grinding or polishing tool are simulated to process the defect. The setting data for the grinding or polishing tool determined in the simulation is forwarded to a master computer. The determined processing data for processing the defect is transferred to the grinding or polishing tool. The defect is processed using the grinding or polishing tool.

Abstract: A polishing method capable of accurately determining a polishing end point of a substrate is disclosed. The method is a film-thickness measuring method for a substrate W using a film-thickness measuring device, at least a part of which being mounted in a polishing table configured to support the polishing pad. The method includes measuring film thicknesses of the substrate W, while rotating the substrate W on a polishing surface of the polishing pad by a polishing head and controlling a position of the film-thickness measuring device relative to the polishing head.

Abstract: An organic light-emitting diode (OLED) deposition system has a workpiece transport system configured to position a workpiece within the OLED deposition system under vacuum conditions, a deposition chamber configured to deposit a first layer of organic material onto the workpiece, a metrology system having one or more sensors measure of the workpiece after deposition in the deposition chamber, and a control system to control a deposition of the layer of organic material onto the workpiece. The metrology system includes a digital holographic microscope positioned to receive light from the workpiece and generate a thickness profile measurement of a layer on the workpiece. The control system is configured to adjust processing of a subsequent workpiece at the deposition chamber or adjust processing of the workpiece at a subsequent deposition chamber based on the thickness profile.

Abstract: Described herein are multi-layered windows for use in chemical-mechanical planarization (CMP) systems and CMP processes. The multi-layered windows of the present disclosure include a transparent structural layer and a hydrophilic surfactant applied to at least a portion of at least one surface of the transparent structural layer. Such multi-layered windows may be in the polishing pad, the platen, or both.

Abstract: A method for autonomously grinding a workpiece includes: accessing a virtual model defining a geometry of the workpiece; identifying a grinding region on the workpiece; and projecting a target grinding profile onto the grinding region on the workpiece. The method also includes: based a geometry of the workpiece and the target grinding profile, generating a tool path for removal of material from the grinding region to the target grinding profile; and assigning a target force to the target region. The method also includes, during a processing cycle: accessing a sequence of force values output by a force sensor coupled to a grinding head; navigating the grinding head across the grinding region according to the tool path; and, based on the sequence of force values, deviating the grinding head from the tool path to maintain forces of the grinding head on the grinding region proximal the target force.

Abstract: A device for polishing of a multi-surface workpiece is described. The device includes a base and a vertical motion platform that moves along two support rods, which carries a motor that drives a rotating shaft. The support rods extend from said base. A polishing tool is attached to the motor shaft. The workpiece being polished is placed on a linear motion stage during the polishing process.

Abstract: A cutting machine includes a monitoring unit that monitors a cutting edge of a cutting blade. The monitoring unit includes an imaging unit that images the cutting edge of the cutting blade, a pulse light source that emits a pulse light to illuminate an imaging zone imaged by the imaging unit, and a camera that captures an image outputted from the imaging unit. The imaging unit includes a first imaging unit that images one side surface of the cutting edge of the cutting blade, a second imaging unit that images an opposite side surface of the cutting edge, and a third imaging unit that images an outer peripheral edge portion of the cutting edge.

Abstract: A device includes a rotator assembly configured to control a rotational kinetic energy of a wafer-platen based on an electrical energy input. The device further includes a controller configured to control the rotational kinetic energy of the wafer-platen, wherein a rotational velocity of the wafer-platen is either increased or decreased. The device further includes a converter configured to generate an electrical energy output of the rotator assembly based on decreased rotational kinetic energy of the wafer-platen. The device further includes an energy storage device configured to store the electrical energy outputted by the rotator assembly based on the decreased rotational kinetic energy of the wafer-platen.

Abstract: A polishing apparatus capable of acquiring accurate film thickness distribution information is disclosed. The polishing apparatus includes a polishing table, a plurality of film thickness sensors, and a controller. The controller analyzes film thickness distribution information of a substrate while identifying a notch position of the substrate based on the measured film thickness information, and outputs visualization information of the film thickness distribution with the notch position as a reference position.

Abstract: A method of using a polishing pad includes applying a slurry to a first location on the polishing pad. The method further includes rotating the polishing pad. The method further includes spreading the slurry across a first region of the polishing pad at a first rate, wherein the first region includes a plurality of first grooves. The method further includes spreading the slurry across a second region, surrounding the first region of the polishing pad at a second rate different from the first rate, wherein the second region includes a plurality of second grooves. The method further includes spreading the slurry across a third region, surrounding the second region of the polishing pad at a third rate less than the first rate and the second rate, wherein the third region includes a plurality of third grooves.

Abstract: A method of polishing a substrate includes polishing a conductive layer on the substrate at a polishing station, monitoring the layer with an in-situ eddy current monitoring system to generate a plurality of measured signals values for a plurality of different locations on the layer, generating thickness measurements the locations, and detecting a polishing endpoint or modifying a polishing parameter based on the thickness measurements. The conductive layer is formed of a first material having a first conductivity. Generating includes calculating initial thickness values based on the plurality of measured signals values and processing the initial thickness values through a neural network that was trained using training data acquired by measuring calibration substrates having a conductive layer formed of a second material having a second conductivity that is lower than the first conductivity to generated adjusted thickness values.

Abstract: A local polishing system comprises: a particle estimation unit (30) for estimating the film thickness distribution of a wafer; a local polishing region setting unit (11) for setting a local polishing region on the wafer based on the film thickness distribution; a polishing head selection unit (12) for selecting a polishing head based on the size of the local polishing region; a model storage (20) holding a recipe generating model that defines the relation between an input node and an output node, the input node being an attribute of the local polishing region, the output node comprising a recipe for a polishing process; a polishing recipe generator (13) that puts an attribute of the local polishing region set by the local polishing region setting unit (11) into the input node of the recipe generating model and determines a polishing recipe for polishing the local polishing region; and a polishing recipe transmitter (15) for transmitting data of the polishing recipe to a local polishing module (200) that perfo

Abstract: A workpiece surface is polished by a polishing pad surface by keeping a point on an outer circumferential edge of the workpiece surface at predetermined coordinates, i.e., first coordinates, in a plane parallel to the workpiece surface but out of contact with the polishing pad surface, and keeping a point on the outer circumferential edge of the polishing pad surface at other coordinates, i.e., third coordinates, in the coordinate plane in contact with an outer circumferential edge of the workpiece surface. In this manner, the workpiece surface is polished in its entirety, and a region of the polishing pad surface in the vicinity of the outer circumferential edge thereof can be worn to the same degree as a region that is located inwardly of the above region. The polishing pad surface is thus prevented from developing a stepped profile due to the polishing of the workpiece surface.

Abstract: A fuel oxygen reduction unit for an engine is provided. The fuel oxygen reduction unit includes a contactor including a fuel inlet that receives an inlet fuel flow and a stripping gas inlet that receives an inlet stripping gas flow, the contactor configured to form a fuel/gas mixture; a separator that receives the fuel/gas mixture, the fuel oxygen reduction unit defining a circulation gas flowpath from the separator to the contactor; and a level control device that controls a level of the fuel/gas mixture inside the separator by regulating the inlet fuel flow to the contactor.

Abstract: Provided is a method for manufacturing an optical connector. The optical connector includes: an optical fiber including a glass fiber and a resin coating; and a ferrule including a through hole. The method for manufacturing includes: coating an inner wall of the through hole with a thermosetting resin; inserting the glass fiber exposed from the resin coating into the through hole; adjusting a mutual positional relationship between the optical fiber and the ferrule so that a distance between end surfaces of a tip of the glass fiber and a tip of the ferrule is equal to or less than 1 mm; rotationally aligning the glass fiber with respect to the ferrule; curing the thermosetting resin; and polishing the tip of the glass fiber and the tip of the ferrule.

Abstract: Chemical mechanical polishing (CMP) apparatus and methods for manufacturing CMP apparatus are provided herein. CMP apparatus may include polishing pads, polishing head retaining rings, and polishing head membranes, among others, and the CMP apparatus may be manufactured via additive manufacturing processes, such as three dimensional (3D) printing processes. The CMP apparatus may include wireless communication apparatus components integrated therein. Methods of manufacturing CMP apparatus include 3D printing wireless communication apparatus into a polishing pad and printing a polishing pad with a recess configured to receive a preformed wireless communication apparatus.

Abstract: The present disclosure provides a chemical mechanical polishing system having a unitary platen. The platen includes one or more recesses within the platen to house various components for the polishing/planarization process. In one embodiment, the platen includes a first recess and a second recess. The first recess is located under the second recess. An end point detector is placed in the first recess and a detector cover may be placed in the second recess. A sealing mean is provided in a space between the end point detector and the detector cover to prevent any external or foreign materials from coming in contact with the end point detector. A fastener used for fastening the detector cover to the platen also provides addition protection to prevent foreign materials from coming in contact with components received in the recesses.

Abstract: Controlling a polishing system includes receiving from an in-situ monitoring system, for each region of a plurality of regions on a substrate being processed by the polishing system, a sequence of characterizing values for the region. For each region, a polishing rate is determined for the region, and an adjustment is calculated for at least one processing parameter. For each of a plurality of parameter update times, an adjustment is calculated for at least one processing parameter, wherein calculation of the adjustment for a particular parameter update time from the plurality of parameter update times includes calculation of expected future parameter changes for one or more future parameter update times subsequent to the particular parameter update time.

Abstract: An optical system may include a light source to provide a beam of light. The optical system may include a reflector to receive and redirect the beam of light. The optical system may include a light gate having an opening to permit the beam of light, from the reflector, to travel through the opening. The optical system may include a light sensor to receive a portion of the beam of light after the beam of light travels through the opening, and convert the portion of the beam of light to a signal. The optical system may include a processing device to determine whether a notch of a wafer is in an allowable position based on the signal.

Abstract: The invention relates to a sawing device for forming saw-cuts into a semiconductor product, including: a carrier for holding the semiconductor product, a saw blade, a first position sensor for determining the position of the semiconductor product held by the carrier, a second position sensor for determining the position of the saw blade, and a control unit configured for controlling the relative movement of the saw blade and the carrier, wherein the sawing device further includes a reference for linking the position of the first position sensor to the position of the second position sensor, wherein the control unit is configured to process, with aid of the reference, the positions determined by the reference sensors into a position of the point on the free surface of the semiconductor product relative to the point on the cutting edge of the saw blade, and, based on this positional information, control the relative movement of the saw blade and the carrier.

Abstract: A cutting apparatus includes a management unit having a measuring unit for measuring an amount of light emitted from a light emitter and received by a light receiver while a cutting blade is positioned between the light emitter and the light receiver, a measured waveform forming section for forming a measured waveform representing the configuration of an outer circumferential region of the cutting blade, and an ideal waveform recognizing section for recognizing one of the comparative waveforms that has the greatest number of waveform regions similar to the measured waveform as an ideal waveform, a difference calculating section for calculating the area of a region where there is a difference between the measured waveform and the ideal waveform.

Abstract: The present invention relates to a method of cleaning an optical film-thickness measuring system used for measuring a film thickness of a substrate, such as a wafer, while polishing the substrate. The method includes: cleaning an optical sensor head (7) by supplying a rinsing liquid into a through-hole (51) formed in a polishing pad (2) on a polishing table (3) before or after polishing of a substrate (W) with use of slurry, the optical sensor head (7) being located below the through-hole (51); and discharging the rinsing liquid from the through-hole (51) through a drain line (54).

Abstract: Controlling a polishing system includes receiving from an in-situ monitoring system, for each region of a plurality of regions on a substrate being processed by the polishing system, a sequence of characterizing values for the region. For each region, a polishing rate is determined for the region, and an adjustment is calculated for at least one processing parameter. Calculation of the adjustment includes minimizing a cost function that includes, for each region, a difference between a current characterizing value or an expected characterizing value at an expected endpoint time and a target characterizing value for the region, and optimization of the cost function is subject to at least one constraint.

Abstract: Accuracy of detection of a fly out of a substrate from a polishing head is improved. A substrate processing apparatus includes a polishing table 350 to which a polishing pad 352 for polishing the substrate is attachable, a polishing head 302 for holding and pressing the substrate against the polishing pad 352, a retainer member disposed surrounding the polishing head 302, a retainer member pressurization chamber disposed adjacent to the retainer member, an arm 360 for holding and turning the polishing head 302, and a slip out detector 910 for detecting a fly out of the substrate from the polishing head 302 based on a turning torque of the arm 360 or based on a flow rate of a fluid supplied to the retainer member pressurization chamber.

Abstract: A blade sharpening and blade sharpness detection system for permitting blade sharpening and a determination of blade sharpness without mechanical contact with the blade cutting edge. An optical inspection unit inspects blade sharpness optically, and a blade positioning and guidance mechanism positions and guides the blade in relation to the optical inspection unit. An output display provides visual output of blade sharpness. The optical inspection unit, which can be a reflective optical sensor, and the blade positioning and guidance mechanism are retained by a pivotable support structure. The positioning and guidance mechanism can comprise first and second pairs of rotatable spheres, each such pair disposed in immediate juxtaposition to act as rolling supports for the blade. The entry of ambient light into the sharpness sensing volume can be prevented by resiliently deflectable light-blocking bodies retained to first and second sides of a sharpness inspection slot within the housing.

Abstract: Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.

Abstract: A semiconductor manufacturing device including a polishing head that is capable of retaining a semiconductor substrate; a polishing pad having a processing surface to be abutted to the semiconductor substrate retained by the polishing head, the processing surface including a groove; a platen that is capable of rotating about a rotary shaft running along a direction intersecting the processing surface, in a state in which the polishing pad is retained by the platen; a measuring section that outputs a measurement value indicating a height of the processing surface at a predetermined location along a circumference of a circle centered about the rotary shaft of the platen; and a derivation section that derives a depth of the groove from the measurement value of the measuring section.

Abstract: An accuracy of detecting a slip out of a substrate from a top ring is improved. A polishing unit 300 includes a polishing table 350, a top ring 302, a light emitting member 371, a slip-out detector 370, and an elimination mechanism 380. A polishing pad 352 that polishes a substrate WF is attached to the polishing table 350. The top ring 302 holds the substrate WF to press the substrate WF against the polishing pad 352. The light emitting member 371 emits a light to a detection area 372 on the polishing pad 352. The slip-out detector 370 detects a slip out of the substrate WF from the top ring 302 based on the light reflected from the detection area 372. The elimination mechanism 380 eliminates a polishing liquid flowing into the detection area 372.

Abstract: During polishing of a stack of adjacent layers, a plurality of instances of a profile control algorithm are executed on a controller with different instances having different values for a control parameter. A first instance receives a sequence of characterizing values from an in-situ monitoring system during an initial time period to control a polishing parameter, and a second instance receives the sequence of characterizing values during the initial time period and a subsequent time period to control the polishing parameter. Exposure of the underlying layer is detected based on the sequence of characterizing values from the in-situ monitoring system.

Abstract: There is provided a grinding apparatus including a chuck table configured to hold a workpiece, a grinding unit configured to grind the workpiece held by the chuck table by grinding stones fixed to a grinding wheel, a grinding feed mechanism configured to raise or lower the grinding unit, a reading unit configured to read a thickness of a base which thickness is recorded on a recording medium on which the thickness of the base of the grinding wheel is recorded, a base thickness storage section configured to store the thickness of the base which thickness is read by the reading unit, and a detecting unit configured to make the grinding unit perform processing by the grinding feed mechanism, and detect a fitting surface of a mount and the lower surface of a grinding stone of the grinding wheel fitted to the mount.

Abstract: A polishing layer is provided. The polishing layer have a surface pattern, a cross section of the surface pattern along a direction has a plurality of grooves and a plurality of polishing portions, each of the grooves is disposed between every two adjacent polishing portions, and the polishing layer comprises a body layer and a surface layer. The surface layer is disposed on a surface of the body layer, and a top of at least one of the polishing portions has at least one flattened region exposing the body layer.

Abstract: A method of controlling polishing includes polishing a stack of adjacent conductive layers on a substrate, measuring with an in-situ eddy current monitoring system a sequence of characterizing values for the substrate during polishing, calculating a polishing rate from the sequence of characterizing values repeatedly during polishing, calculating one or more adjustments for one or more polishing parameters based on a current polishing rate using a first control algorithm for an initial time period, detecting a change in the polishing rate that indicates exposure of the underlying conductive layer, and calculating one or more adjustments for one or more polishing parameters based on the polishing rate using a different second control algorithm for a subsequent time period after detecting the change in the polishing rate.

Abstract: A shot peening efficiency system for separating reusable abrasive media from non-reusable media includes a housing having an opening configured to receive an abrasive media inlet valve; and a separator assembly disposed within the housing, the separator assembly comprising at least one mesh screen and at least one vibratory motor. The housing includes a main channel having a first channel for reusable abrasive media and a second channel for non-reusable abrasive media. The separator assembly is configured to separate reusable abrasive media from non-reusable abrasive media by passing the reusable abrasive media via the first channel and by passing the non-reusable abrasive media via the second channel. The first channel terminates at a reusable abrasive media outlet valve connected to at least one first abrasive media hopper; the second channel terminates at an abrasive media discard outlet valve connected to at least one second abrasive media hopper.

Abstract: A method of chemical mechanical polishing includes bringing a conductive layer of a substrate into contact with a polishing pad, supplying a polishing liquid to the polishing pad, generating relative motion between the substrate and the polishing pad, monitoring the substrate with an in-situ electromagnetic induction monitoring system as the conductive layer is polished to generate a sequence of signal values that depend on a thickness of the conductive layer, and determining a sequence of thickness values for the conductive layer based on the sequence of signal values. Determining the sequence of thickness values includes at least partially compensating for a contribution of the polishing liquid to the signal values.

Abstract: A milling machine processing system with an intelligently follow-up cutting fluid nozzle and a working method thereof including a workpiece stage, a milling machine box arranged above the workpiece stage, a milling cutter mechanism mounted on the milling machine box for processing workpieces on the workpiece stage, a rotating mechanism mounted on an end surface of the milling machine box located at a side of a milling cutter, the rotating mechanism is connected with a two-axis linkage mechanism and drives the two-axis linkage mechanism to rotate about a center line where the milling cutter is located, the two-axis linkage system is connected with a nozzle through an angle adjusting mechanism and is used for adjusting a position and an angle of the nozzle, and the milling machine processing system has an infrared temperature detection module for collecting the temperature of a processing region.

Abstract: The robotic maintenance vehicle (RMV) has a propulsion system, a control system, an electrical power source, a maintenance module, a multi-axis robot, an optical system, and a location translator. The maintenance module is configured to hold different kinds of road maintenance materials. The multi-axis robot is configured to convey the road maintenance material from either the maintenance module to the road, the road to the maintenance module, or both. The optical system and the location translator are configured to be controlled by the control system and operate in conjunction to instruct the multi-axis robot where to pick up and/or place the road maintenance material. The multi-axis robot is configured to be selectively coupled to a distal arm tool.

Abstract: A method of chemical mechanical polishing includes bringing a substrate having a conductive layer disposed over a semiconductor wafer into contact with a polishing pad, generating relative motion between the substrate and the polishing pad, monitoring the substrate with an in-situ electromagnetic induction monitoring system as the conductive layer is polished to generate a sequence of signal values that depend on a thickness of the conductive layer, determining a sequence of thickness values for the conductive layer based on the sequence of signal values, and at least partially compensating for a contribution of conductivity of the semiconductor wafer to the signal values.

Abstract: A chemical mechanical polishing apparatus includes a platen having a top surface to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature monitoring system. The temperature monitoring system includes a non-contact thermal sensor positioned above the platen that has a field of view of a portion of the polishing pad on the platen. The sensor is rotatable by the motor around an axis of rotation so as to move the field of view across the polishing pad.

Abstract: The present disclosure describes a method and an apparatus that can enhance the slurry oxidizability for a chemical mechanical polishing (CMP) process. The method can include securing a substrate onto a carrier of a polishing system. The method can further include dispensing, via a feeder of the polishing system, a first slurry towards a polishing pad of the polishing system. The method can further include forming a second slurry by enhancing an oxidizability of the first slurry, and performing a polishing process, with the second slurry, on the substrate.

Abstract: An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a pad conditioner to press an abrasive body against the polishing surface, an in-situ polishing pad monitoring system including an imager disposed above the platen to capture an image of the polishing pad, and a controller configured to receive the image from the monitoring system and generate a measure of polishing pad surface roughness based on the image. The controller can use machine-learning based image processing to generate the measure of surface roughness.

Abstract: A metrology technique for analyzing a substrate includes storing data indicating a boundary of an area in a 2-dimensional color space having a pair of color channels including a first color channel and a second color channel as axes of the color space, receiving color data of a substrate from a camera, generating a color image of the substrate from the color data, performing a comparison of a pair of color values for the pair of color channels for the pixel to the boundary of the area in the 2-dimensional color space for each pixel of a plurality of pixels of the color image to determine whether the pair of color values meet thresholds provided by the boundary, and generating a signal to an operator based on results of the comparison for the plurality of pixels.

Abstract: A method of using a polishing pad includes applying a slurry to a first location on the polishing pad. The method further includes rotating the polishing pad. The method further includes spreading the slurry across a first region of the polishing pad at a first rate, wherein the first region includes a plurality of first grooves, a first material property of the first region varies in a thickness direction of the polishing pad, each of the plurality of first grooves extends through at least two variations in the first material property, and the first material property comprises porosity, specific gravity or absorbance. The method further includes spreading the slurry across a second region of the polishing pad at a second rate different from the first rate, wherein the second region comprises a plurality of second grooves.

Abstract: A robotic system includes a robotic manipulator having one or more contact pads. The contact pads have features therein that are detectable to determine or measure a degree to which they have worn down. Such features may include fluorescent materials, colorful materials, and/or RFID tags. A robotic environment may include one or more sensors to detect such features, and may be configured to generate a signal indicating that one or more contact pads are in need of maintenance.

Abstract: A polishing table holds a polishing pad. A top ring holds a semiconductor wafer. A swing arm holds the top ring. The swing arm swings around a swing center on the swing arm during polishing. An optical sensor is disposed on the polishing table and measures an optical characteristic changeable in accordance with a variation in film thickness of the semiconductor wafer. A fluid supply control apparatus determines a distance from an axis of rotation to the optical sensor when the semiconductor wafer is rotated by the top ring. An end point detection section detects a polishing end point indicating an end of polishing based on the optical characteristic measured by the optical sensor and the determined distance.

Abstract: In an automatic polishing system configured such that under control of a polishing robot and/or a polishing tool by a polishing controller, the polishing tool provides a polishing action on a polishing subject face, a color intensity measurement instrument is provided for measuring an intensity of a specified color in the polishing subject face. Based on the intensity of the specified color measured by this color intensity measurement instrument, the polishing controller controls the polishing robot and/or the polishing tool, so that an amount of polishing work by the polishing tool onto the polishing subject face is adjusted according to the intensity of the specified color.

Abstract: A method of polishing a substrate includes polishing a conductive layer on the substrate at a polishing station, monitoring the layer with an in-situ eddy current monitoring system to generate a plurality of measured signals values for a plurality of different locations on the layer, generating thickness measurements the locations, and detecting a polishing endpoint or modifying a polishing parameter based on the thickness measurements. The conductive layer is formed of a first material having a first conductivity. Generating includes calculating initial thickness values based on the plurality of measured signals values and processing the initial thickness values through a neural network that was trained using training data acquired by measuring calibration substrates having a conductive layer formed of a second material having a second conductivity that is lower than the first conductivity to generated adjusted thickness values.