Abstract: A grinding apparatus that performs thickness measurement across an entire wafer surface without degradation of throughput of wafer grinding and grinds the wafer precisely to a target thickness. A grinding apparatus includes a rough grinding stage for roughly grinding a wafer and a fine grinding stage for finely grinding the wafer. A first thickness measuring means for measuring the thickness of the wafer while the wafer is being transferred is provided to a column so disposed as to span an index table. A control unit of the grinding apparatus corrects a target thickness after fine grinding and computes a target thickness after correction on the basis of an average thickness across the entire surface of the wafer before fine grinding obtained from measured values of the first thickness measuring means.

Abstract: An optical guidewire system employs an optical guidewire (10), an optical guidewire controller (12), a guide interface (13) and an optical connector (15). The optical guidewire (10) is for advancing a catheter (20) to a target region relative to a distal end of the optical guidewire (10), wherein the optical guidewire (10) includes one or more guidewire fiber cores (11) for generating an encoded optical signal (16) indicative of a shape of the optical guidewire (10). The optical guidewire controller (12) is responsive to the encoded optical signal (16) for reconstructing the shape of the optical guidewire (10). The guidewire interface (13) includes one or more interface fiber core(s) (14) optically coupled to the optical guidewire controller (12). The optical connector (15) facilitates a connection, disconnection and reconnection of the optical guidewire (10) to the guidewire interface (13) that enables a backloading the catheter (20) on the optical guidewire (10).

Abstract: An metallographic system comprising a programmable controller, a robotic arm, a specimen clamping or holding device, a sectioning saw, a mounting station, a polishing station, a specimen preparation station, and an analyzer for examining the specimen.

Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4?-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4?-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 60 to 90, a shear storage modulus (G?) at 65° C.

Abstract: A spectrometer module and a fabrication method thereof are provided. The fabrication method includes the steps of: providing at least one substrate; and forming at least one positioning side and at least one optical component of the spectrometer on the at least one substrate by a microelectromechanical systems (MEMS) process. The spectrometer module fabricated by the fabrication method includes a plurality of substrates and at least one optical component. At least one of the substrates has at least one positioning side, and the at least one optical component of the spectrometer is formed on at least one of the substrates. The positioning side and the optical component are fabricated by a MEMS process.

Abstract: A preferred embodiment biosensor is a multi-layer micro-porous thin film structure. Pores in a top layer of the micro-porous thin film structure are sized to accept a first molecule of interest. Pores in a second layer of the micro-porous thin film structure are smaller than the pores in the top layer and are sized to accept a second molecule of interest that is smaller than the first molecule of interest. The pores in the second layer are too small to accept the first molecule of interest. The pores in the top layer and the pores in the second layer are sized and arranged such that light reflected from the multi-layer micro-porous thin film structure produces multiple superimposed interference patterns that can be resolved. In preferred embodiments, the multi-layer micro-porous thin film structure is a porous silicon thin film multi-layer structure formed on a silicon substrate, such as a silicon wafer. Specific and nonspecific binding can be detected with biosensors of the invention.

Abstract: An encoding device includes a sensing unit having a signal transmitting element and a signal receiving element. The signal transmitting element and the signal receiving element are respectively disposed on different carrier members. Accordingly, when performing the rectification and alignment processes between the signal receiving element and the signal unit, the other components are prevented from hindering the rectification and alignment processes, whereby the rectification and alignment processes can be easily performed.

Abstract: An observation and photography apparatus that has a polishing mechanism attached thereto. The polishing mechanism is provided with a turntable with a perpendicular rotation shaft, a polishing cloth for polishing the surface of a sample attached to the bottom surface of the turntable, and a polishing-fluid spraying nozzle disposed below the polishing cloth for spraying polishing fluid containing polishing material upward to we the polishing cloth.

Abstract: A method for manufacturing a laminated polishing pad of the present invention, comprising the steps of: forming a polishing layer by providing a light transmitting region in an opening A of a polishing region; providing an adhesive member X on one side of the polishing layer, wherein the adhesive member X contains a hot-melt adhesive; providing a removable protective member on a part of the adhesive member X corresponding to the light transmitting region; bonding a support layer to the adhesive member X on which the removable protective member is provided; and removing a part of the support layer corresponding to the light transmitting region and also removing the removable protective member to form an opening B.

Abstract: A computer-implemented method of generating reference spectra includes polishing a first substrate in a polishing apparatus having a rotatable platen, measuring a sequence of spectra from the substrate during polishing with an in-situ monitoring system, associating each spectrum in the sequence of spectra with a index value equal to a number of platen rotations at which the each spectrum was measured, and storing the sequence of spectra as reference spectra.

Abstract: A polishing apparatus capable of eliminating a variation in film thickness along a circumferential direction of a substrate, such as a wafer, is disclosed. The polishing apparatus includes: a polishing head including an elastic membrane for pressing the substrate against the polishing surface and a retainer ring arranged so as to surround the substrate, the retainer ring being capable of contacting the polishing surface; a rotating mechanism configured to rotate the polishing head about its own axis; a rotation angle detector configured to detect a rotation angle of the polishing head; and a polishing controller configured to periodically change a polishing condition of the substrate in synchronization with the rotation angle of the polishing head.

Abstract: Disclosed herein is a wafer processing method for dividing a wafer into a plurality of individual devices along a plurality of crossing division lines. The wafer is composed of a substrate and a functional layer formed on the front side of the substrate. The division lines are formed on the front side of the functional layer. A laser beam having a transmission wavelength to the substrate is applied to the wafer from the back side thereof to detect the height of an interface between the functional layer and the substrate in an area corresponding to each division line. The depth of cut by a cutting blade for cutting the substrate is next set according to the height detected above.

Abstract: The invention relates to a method of clamping a substrate on a surface of a substrate support structure. First, a liquid is applied on a surface of the substrate support structure. The surface is provided with a plurality of contact elements. The liquid is applied such that the contact elements are fully covered by a liquid layer. Then the substrate is provided and placed onto the liquid layer. Finally, liquid underneath the substrate is removed such that the substrate rests on the plurality of contact elements and is clamped by means of a capillary clamping force exerted by a capillary layer of the liquid between the substrate and the surface of the substrate support structure.

Abstract: A workpiece processing apparatus is provided. The apparatus includes a rotary turntable having one or more spindles thereon, the turntable being configured to rotate about a turntable axis. Each of the spindles is configured to receive and secure thereon a workpiece to be processed by the apparatus. Each of the spindles can rotate about their own independent axes. The apparatus includes one or more grind spindles that overlay the turntable and are configured to communicate with the workpieces. The apparatus processes the workpieces by transitioning between first and second operational states. The first operational state centers the spindles and the workpieces thereon under the grind spindle to condition an entire top surface of the workpieces. The second operational state offsets the spindles from the center of the grind spindle to condition a perimeter edge of the workpieces. A controller can govern the transition between first and second operational states.

Abstract: A method of controlling polishing includes polishing a metal layer of a substrate. The metal layer overlies an underlying layer structure. During polishing of the metal layer, a light beam is directed onto the first substrate. The metal layer is sufficiently thin that a portion of the light beam reflects from an exposed surface of the metal layer and a portion of the light beam passes through the metal layer and reflects from the underlying layer structure to generate a reflected light beam. The reflected light beam is monitored during polishing and a sequence of measured spectra is generated from the reflected light beam. At least one of a polishing endpoint or an adjustment for a polishing rate is determined from the sequence of measured spectra.

Abstract: A polishing apparatus includes a plurality of stations supported on a platform, the plurality of stations including at least two polishing stations and a transfer station, each polishing station including a platen to support a polishing pad, a plurality of carrier heads suspended from and movable along a track such that each polishing station is selectively positionable at the stations, and a controller configured to control motion of the carrier heads along the track such that during polishing at each polishing station only a single carrier head is positioned in the polishing station.

Abstract: An equipment for coating an airfoil of a turbine blade of a turbine engine in a coating block, including a base on which a molding block is positioned for flow of the coating metal, the molding block including a cavity defining a reference plane on the block for positioning the block in space, wherein the base also includes a cradle supporting the blade via six bearing points defining an orientation plane representative of an angular position of the airfoil relative to a root of the blade. The cradle is rotatably movable relative to the base about an axis oriented so as to be substantially parallel to a direction of a leading edge of the blade, to enable a modification in an angle formed between the reference and orientation planes.

Abstract: The present invention is directed to a double-side polishing method including interposing a wafer held by a carrier between upper and lower turn tables to which respective polishing pads are attached, and rotating and revolving the carrier while supplying a polishing agent to polish both surfaces of the wafer at the same time, the method including the steps of: first polishing at a high polishing rate; second polishing at a low polishing rate; measuring flatness of the polished wafer; and determining polishing conditions of the second polishing in a next polishing batch on a basis of the measured flatness. The method can stably improve the flatness of a wafer without being affected by variations in carrier thickness over time.

Abstract: The invention provides a polishing pad that contains at least one light-transmitting region and optionally a polishing pad body. The light-transmitting region is composed of a material comprising (a) a polymeric resin and (b) at least one light-absorbing compound, and the light-transmitting region has a total light transmittance of about 25% or more at one or more wavelengths in a range of 250 nm to 395 nm.

Abstract: Methods and devices are provided for controlling movement of a working end of a surgical device. In one embodiment, methods and devices are provided for moving an end effector on a distal end of a surgical fastening device. Movement can include rotational movement of the end effector about an axis of the shaft, articulation of the end effector relative to the shaft, and actuation of an end effector, e.g., closing, firing, and/or cutting. In other embodiments, a single cable actuator is provided and is movable between a first position, in which it is effective to rotate an end effector without actuating (i.e., closing and firing) the end effector, and a second position, in which it is effective to actuate the end effector without rotating the end effector. In other aspects, methods and devices are provided for moving a flexible neck formed on a distal end of an accessory channel for use with an endoscope.

Abstract: There is provided a polishing apparatus capable of detecting uneven wear occurring on a polishing pad and detecting an appropriate replacement timing of the polishing pad. The polishing apparatus detects, every predetermined time, a value of rotation speed or a value of rotation torque of a table drive shaft for rotationally driving a polishing table or a dresser drive shaft for driving a dresser, or a value of swing torque of a dresser swing shaft for driving the dresser; calculates a change quantity thereof based on the value of the detected rotation speed, the value of the detected rotation torque, or the value of the detected swing torque; determines whether or not the change quantity exceeds a predetermined value; and notifies a user of a warning when a determination is made that the change quantity exceeds the predetermined value.

Abstract: An object of the present invention is to provide a polishing pad which enables high accuracy optical end-point detection in a state where polishing is carrying out, and which can prevent slurry leakage from a polishing layer to a cushion layer even in the case of being used for a long period. Another object is to provide a method for producing a semiconductor device using the polishing pad. The present invention relates to a polishing pad in which a polishing layer having a polishing region and a light-transmitting region, and a cushion layer having a through hole are laminated via a double-sided adhesive sheet such that the light-transmitting region and the through hole are laid one upon another, wherein a transparent member is stuck on an adhesive layer of the double-sided adhesive sheet in the through hole.

Abstract: Various embodiments describe a method of quantifying bow in a wafer. In one embodiment, the method includes measuring a first plurality of distances from a first sensor to a first surface of the wafer to calculate the bow in the wafer. The first sensor is positioned outside of a set of process modules of the plasma processing system. A determination is made whether the calculated bow of the wafer is within a pre-determined range. If the calculated bow of the wafer is within the pre-determined range, the wafer is moved into a process module of the set of process modules for processing and a recipe for processing the wafer is adjusted based on the calculated bow of the wafer. If the calculated bow of the wafer is outside the pre-determined range, the wafer is removed from the plasma processing system. Other methods are described as well.

Abstract: A wafer polishing apparatus configured to polish simultaneously both surfaces of a wafer by pressing and rubbing the wafer, while holding the wafer with: a lower turn table having a flat polishing-upper-surface rotationally driven; an upper turn table having a flat polishing-lower-surface rotationally driven, the upper turn table being arranged with facing to the lower turn table; and a carrier having a wafer-holding hole for holding the wafer, wherein the polishing is performed while measuring a thickness of the wafer through a plurality of openings provided between a rotation center and an edge of the upper turn table or the lower turn table, and switching a polishing slurry with a polishing slurry having a different polishing rate during the polishing of the wafer. As a result, the wafer polishing apparatus can manufacture a wafer having a high flatness and a high smoothness at high productivity and high yield.

Abstract: A method of operating a polishing system includes polishing a substrate at a polishing station, the substrate held by a carrier head during polishing, transporting the substrate to an in-sequence optical metrology system positioned between the polishing station and another polishing station or a transfer station, measuring a plurality of spectra reflected from the substrate with a probe of the optical metrology system while moving the carrier head to cause the probe to traverse a path across the substrate and while the probe remains stationary, the path across the substrate comprising either a plurality of concentric circles or a plurality of substantially radially aligned arcuate segments, and adjusting a polishing endpoint or a polishing parameter of the polishing system based on one or more characterizing values generated based on at least some of the plurality of spectra.

Abstract: Polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.

Abstract: A CMP polishing pad comprising (a) a polishing layer having a polishing surface and a back surface opposite said polishing surface; said polishing layer having at least one cured opaque thermoset polyurethane region and at least one aperture region; said at least one cured opaque thermoset region has a porosity from about 10% to about 55% by volume; said at least one aperture region having (1) a top opening positioned below the polishing surface, (2) a bottom opening that is co-planar with said back surface and (3) straight line vertical sidewalls extending from said aperture top opening to said aperture bottom opening; said at least one aperture region filled with a cured plug of thermoset polyurethane local area transparency material that has a light transmission of less than 80% at a wavelength from 700 to 710 nanometers and is chemically bonded directly to a thermoset polyurethane opaque area; (b) an aperture-free removable release sheet covering at least a portion of said back surface of the polishing l

Abstract: An object of the present invention is to provide a polishing pad that is prevented from causing an end-point detection error due to a reduction in light transmittance from the early stage to the final stage of the process, and to provide a method of producing a semiconductor device with the polishing pad. The present invention is directed to a polishing pad, comprising a polishing layer comprising a polishing region and a light-transmitting region, wherein a polishing side surface of the light-transmitting region is subjected to a surface roughness treatment, and the light-transmitting region has a light transmittance of 40% to 60% at a wavelength of 600 nm before use.

Abstract: A method of controlling a polishing operation includes obtaining a sequence over time of measured spectra with an in-situ optical monitoring system during polishing. For each measured spectrum from the sequence an optical model is fit. The optical model includes dimensions of a repeating structure and the fitting includes calculating a output spectrum using diffraction effects of the repeating structure, and parameters of the optical model include an endpoint parameter and a parameter of the repeating structure. The fitting generates the sequence of fitted endpoint parameter values, and at least one of a polishing endpoint or an adjustment of a pressure to the substrate is determined from the sequence of fitted endpoint parameter values.

Abstract: A TSV wafer thinning controlling method and system is provided, which can improve the accuracy of the wafer thinning technique. The system includes a chuck table used for carrying a wafer and a grinding device used for thinning the wafer; and further includes: an infrared sensor equipped on the chuck table or grinding device, and a measurement feedback system connected with the infrared sensor and the grinding device; wherein, the infrared sensor comprises an infrared emitting and receiving circuit, signal amplifying and filtering circuit and a data processor.

Abstract: A method and apparatus for sanding a number of surface features on a surface of an object. A first type of operation may be performed on the number of surface features on the surface of the object using a first end effector. Feedback laser data may be generated about the number of surface features after the first type of operation has been performed using a laser device. A second type of operation may be performed on the number of surface features using a second end effector and the feedback laser data to rework the number of surface features until the number of surface features has been reworked to within selected tolerances.

Abstract: A method of controlling a polishing operation includes measuring a plurality of spectra at a plurality of different positions on a substrate to provide a plurality of measured spectra. For each measured spectrum of the plurality of measured spectra, a characterizing value is generated based on the measured spectrum. For each characterizing value, a goodness of fit of the measured spectrum to another spectrum used in generating the characterizing value is determined. A wafer-level characterizing value map is generated by applying a regression to the plurality of characterizing values with the plurality of goodnesses of fit used as weighting factors in the regression. A polishing endpoint or a polishing parameter of the polishing apparatus is adjusted based on the wafer-level characterizing map, and the substrate or a subsequent substrate is polished in the polishing apparatus with the adjusted polishing endpoint or polishing parameter.

Abstract: Polishing pads with apertures are described. Methods of fabricating polishing pads with apertures are also described.

Abstract: Manufacturing methods are provided. A component may be polished to remove defects thereon. An identifier may be added to the polishing material employed to polish the component. A detector may detect the identifier. For example, the identifier may be a fluroescing material that may illuminate in the presence of a fluorescent light. A determining apparatus may determine a status of the component based on the presence or absence of the identifier. For example, the determining apparatus may determine that the component needs to be re-cleaned based on presence of the identifier. Related systems and computer program products are also provided.

Abstract: There is disclosed a measuring method of a surface roughness of a polishing pad which can measure a surface roughness index of the polishing pad showing a strong relationship with polishing performance. A method for measuring a surface roughness of a polishing pad includes acquiring an image of a surface of a polishing pad by using a laser microscope, selecting only a region which has a height larger than an average height from the acquired image, and calculating a surface roughness from only the selected region.

Abstract: In the case of a method for the material-removing fine machining of a workpiece surface of a workpiece, in particular for the honing or finishing of workpiece portions having substantially rotationally symmetrically curved workpiece surfaces, at least one fine machining tool machines the workpiece surface and, by means of a measuring system, a measurement of the workpiece surface is performed. In this case, at at least one measuring position, radar radiation is directed onto the workpiece surface, and the radar radiation reflected from the workpiece surface is acquired and evaluated for the purpose of determining at least one surface measurement value.

Abstract: A polishing article has a polishing surface and an aperture, the aperture including a first section and a second section. The polishing article includes a projection extending inwardly into the aperture. The polishing article includes a lower portion on a side of the first surface farther from the polishing surface. A window has a first portion positioned in the first section of the aperture and a second portion extending into the second section of the aperture. The window has a second surface substantially parallel to the polishing surface. A first adhesive adheres the first surface of the projection to the second surface of the window to secure the window to the projection and a second adhesive of different material composition than the first adhesive. The second adhesive is positioned laterally between the second portion of the window and the lower portion of the polishing article.

Abstract: A method of controlling a polishing operation includes polishing a first layer of a substrate, during polishing, obtaining a sequence over time of measured spectra with an in-situ optical monitoring system, for each measured spectrum from the sequence of measured spectra, fitting an optical model to the measured spectrum, the fitting including finding parameters that provide a minimum difference between an output spectrum of the optical model and the measured spectrum, the parameters including an endpoint parameter and at least one non-endpoint parameter, the fitting generating a sequence of fitted endpoint parameter values, each endpoint parameter value of the sequence associated with one of the spectra of the sequence of measured spectra, and determining at least one of a polishing endpoint or an adjustment of a pressure to the substrate from the sequence of fitted endpoint parameter values.

Abstract: A wafer polishing apparatus configured to polish simultaneously both surfaces of a wafer by pressing and rubbing the wafer, while holding the wafer with: a lower turn table having a flat polishing-upper-surface rotationally driven; an upper turn table having a flat polishing-lower-surface rotationally driven, the upper turn table being arranged with facing to the lower turn table; and a carrier having a wafer-holding bole for holding the wafer, wherein the polishing is performed while measuring a thickness of the wafer through a plurality of openings provided between a rotation center and an edge of the upper turn table or the lower turn table, and switching a polishing slurry with a polishing slurry having a different polishing rate during the polishing of the wafer. As a result, the wafer polishing apparatus can manufacture a wafer having a high flatness and a high smoothness at high productivity and high yield.

Abstract: A method of controlling polishing includes polishing a substrate of a non-metallic layer undergoing polishing and a metal layer underlying the non-metallic layer; storing a metal reference spectrum, the metal reference spectrum being a spectrum of light reflected from a same metal material as the metal layer; measuring a sequence of raw spectra of light reflected from the substrate during polishing with an in-situ optical monitoring system; normalizing each raw spectrum in the sequence of spectra to generate a sequence of normalized spectra, of which normalizing includes a division operation where the measured spectrum is in the numerator and the metal reference spectrum is in the denominator; and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on at least one normalized predetermined spectrum from the sequence of normalized spectra.

Abstract: A film-thickness measuring apparatus and a film-thickness measuring method capable of improving an accuracy of the film-thickness measurement are disclosed. The film-thickness measuring apparatus includes a substrate stage configured to support a substrate horizontally, a rinsing water supply structure configured to supply rinsing water onto an entire surface of the substrate on the substrate stage, a film-thickness measuring head configured to transmit light to a measurement area of the surface of the substrate on the substrate stage, produce a spectrum of reflected light from the measurement area, and determine a film thickness of the substrate from the spectrum, and a fluid supply structure configured to form a flow of a gas on a path of the light and supply the flow of the gas onto the measurement area.

Abstract: A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a substrate holding apparatus configured to hold the substrate and to press the substrate against the polishing surface, and a controller. The substrate holding apparatus includes an elastic membrane configured to form a substrate holding surface which is brought into contact with the substrate, a carrier provided above the elastic membrane, at least one pressure chamber formed between the elastic membrane and the carrier, and an infrared light detector configured to measure thermal energy from the elastic membrane. The controller calculates an estimate value of a temperature of the elastic membrane using a measured value of the infrared light detector.

Abstract: A polishing apparatus includes a platen to hold a polishing pad having a plurality of optical apertures, a carrier head to hold a substrate against the polishing pad, a motor to generate relative motion between the carrier head and the platen, and an optical monitoring system. The optical monitoring system includes at least one light source, a common detector, and an optical assembly configured to direct light from the at least one light source to each of a plurality of separated positions in the platen, to direct light from each position of the plurality of separated positions to the substrate as the substrate passes over said each position, to receive reflected light from the substrate as the substrate passes over said each position, and to direct the reflected light from each of the plurality of separated positions to the common detector.

Abstract: A method of controlling polishing includes polishing a substrate having a second layer overlying a first layer, detecting exposure of the first layer with an in-situ monitoring system, receiving an identification of a selected spectral feature and a characteristic of the selected spectral feature to monitor during polishing, measuring a sequence of spectra of light from the substrate while the substrate is being polished, determining a first value for the characteristic of the feature at the time that the first in-situ monitoring technique detects exposure of the first layer, adding an offset to the first value to generate a second value, and monitoring the characteristic of the feature and halting polishing when the characteristic of the feature is determined to reach the second value.

Abstract: A method of manufacturing an optical lens, comprising: providing a lens member comprising a first surface and a first reference system identified by engraved markings on the first surface, providing surface data corresponding to a second surface of the optical lens to be manufactured, providing second markings on the lens member defining a second reference system, providing marking positioning error between the second markings and the engraved markings, providing an adhesive tape on the first surface of the lens member, and a manufacturing step during which the second surface of the optical lens is manufactured according to the surface data and the marking positioning error such that the relative position of the first and second surfaces is respected.

Abstract: A method of symmetrically chamfering a substrate includes repeating, at least a plurality of times, the steps of chamfering an edge of the substrate using a chamfering wheel, measuring an asymmetric chamfering deviation (y) of the edge of the substrate which is chamfered, and controlling a relative position of the chamfering wheel with respect to the substrate by a value of a function f(y) of the variable y. It is possible to constantly symmetrically chamfer the edge of the substrate via active response to a change in the chamfering environment without a hardware-based operation of the related art.

Abstract: The system delivers media blasting material to an interior surface of a large storage tank comprises a substantially upright support structure secured to the surface to be blasted. The upright support structure is preferably vertical. A frame extends across the upright support structure. An extendable arm is affixed to the frame at a section. The section is securely and pivotably attached to the section in such a way to enable the arm to rotate freely inside the large storage tank, so that the blaster secured at the end of the extendable arm can blast the entire interior surface of the large storage tank while the upright support structure remains in place. A robot blaster is positioned at the end of the extendable arm and performs the media blasting. A work station is located nearby the site of the large storage tank and controls the position of the extendable arm relative to the interior surface being blasted via a processor and the operation of the blasting delivery system.

Abstract: A method of controlling polishing includes storing a library having a plurality of reference spectra, polishing a substrate, measuring a sequence of spectra of light from the substrate during polishing, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum using a matching technique other than sum of squared differences to generate a sequence of best matching reference spectra, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the sequence of best matching reference spectra. Finding a best matching reference spectrum may include performing a cross-correlation of the measured spectrum with each of two or more of the plurality of reference spectra from the library and selecting a reference spectrum with the greatest correlation to the measured spectrum as a best matching reference spectrum.

Abstract: A method of controlling polishing includes polishing a substrate and receiving an identification of a selected spectral feature, a wavelength range having a width, and a characteristic of the selected spectral feature to monitor during polishing. A sequence of spectra of light from the substrate is measured while the substrate is being polished. A sequence of values of the characteristic of the selected spectral feature is generated from the sequence of spectra. For at least some spectra from the sequence of spectra, a modified wavelength range is generated based on a position of the spectral feature within a previous wavelength range used for a previous spectrum in the sequence of spectra, the modified wavelength range is searched for the selected spectral feature, and a value of a characteristic of the selected spectral feature is determined.

Abstract: A method of polishing a substrate is disclosed. The method includes irradiating the substrate with light; measuring intensity of the reflected light; producing spectral waveform representing relationship between relative reflectance and wavelength of the light; performing a Fourier transform process on the spectral waveform to determine a thickness of the film and a corresponding strength of frequency component; determining whether the determined thickness of the film is reliable or not by comparing the strength of frequency component with a threshold value; calculating a defective data rate representing a proportion of the number of unreliable measured values to the total number of measured values; and changing the threshold value based on the defective data rate.