Abstract: Methods for holding a workpiece with a hydrostatic pad are disclosed herein. The pad includes hydrostatic pockets formed in a face of the body directly opposed to the wafer. The pockets are adapted for receiving fluid through the body and into the pockets to provide a barrier between the body face and the workpiece while still applying pressure to hold the workpiece during grinding. The hydrostatic pads allow the wafer to rotate relative to the pads about their common axis. The pockets are oriented to reduce hydrostatic bending moments that are produced in the wafer when the grinding wheels shift or tilt relative to the hydrostatic pads, helping prevent nanotopology degradation of surfaces of the wafer commonly caused by shift and tilt of the grinding wheels.

Abstract: A double-side grinding apparatus is designed to be capable of minimizing thermal expansion of hydrostatic pad members and reducing nanotopography in performing wafer grinding. The double-side grinding apparatus is a double-side grinding apparatus for wafers that can simultaneously grind either surface of a wafer to be ground by pressing a grindstone against either surface of the wafer to be ground while hydrostatically supporting either surface of the wafer to be ground in a noncontact manner. Each hydrostatic supporting unit is formed with a hydrostatic pad member facing the wafer to be ground, and a base member placed on the back surface of the hydrostatic pad member. The hydrostatic pad member is made of a ceramic member, and the base member is made of a metal member.

Abstract: Optical polishing pitch formulations include synthetic polymers or other synthetic resins. As alternatives to traditional optical pitches, these materials offer improved stability in use, storage, and processing. In addition, these pitch compositions may be masterbatched and manufactured with precision to ensure superior reproducibility and quality control in polishing performance.

Abstract: The polishing method of a disk-shaped substrate for polishing an outer circumference 13 of a disk-shaped substrate using slurry is provided with in this sequence: a first polishing process for polishing the outer circumference 13 using an abrasive-grain inclusion brush 50 made of a resin in which polishing abrasive grains are included; and a second polishing process for polishing the outer circumference 13 using a resin brush 60 made of a resin in which the polishing abrasive grains are not included.

Abstract: A magnetic-recording-disk test-head. The magnetic-recording-disk test-head includes a slider, a test pad and a slider-surface-shape control mechanism. The slider includes a leading edge and a trailing edge. The test pad is disposed at a trailing-edge side of the slider and is configured to remove and to detect asperities on a magnetic-recording disk. The slider-surface-shape control mechanism is configured to change a shape of an air-bearing surface of the slider and is disposed at a leading-edge side of the slider.

Abstract: A patterned portion of a patterned semiconductor substrate is removed by abrasive mechanical planarization employing an abrasive pad but without employing any slurry. Preferably, water is supplied to enhance the removal rate during the mechanical planarization. The removal rate of material is substantially independent for common materials employed in back-end-of-line (BEOL) semiconductor materials, which enables non-selective removal of the material containing metallization structures. The removal rate of silicon is lower than the removal rate for the BEOL semiconductor materials, enabling a self-stopping planarization process.

Abstract: A method for producing a die for molding a ceramic honeycomb structure, which has molding grooves arranged in a lattice pattern and apertures communicating with the molding grooves for supplying a moldable material, wherein the formation of the lattice-patterned grooves by machining is conducted by a first machining operation for forming pluralities of first parallel grooves, and a second machining operation for forming second grooves crossing the first grooves; wherein the first and second machining operations are conducted by at least 2 passes of grinding or cutting using a rotating tool; and wherein the second machining operation is conducted by up-cutting in the second pass or later, and a method for producing a ceramic honeycomb structure using such a die.

Abstract: Correction of grinding spindle positions in double-side grinding machines for the simultaneous double-side machining of semiconductor wafers is achieved by torsionally coupling the two grinding spindles, each comprising a grinding disk flange for receiving a grinding disk, and providing a measuring unit with an inclinometer and two sensors for distance measurement, between the two grinding disk flanges such that the grinding spindles are essentially in the position they would have with mounted grinding disks during the grinding process, wherein the coupled grinding spindles are rotated while inclinometer and sensors determine radial and axial correction values of axial alignment to adjust the grinding spindles to a symmetrical orientation. The spindle positions may be corrected under the action of process forces.

Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 ?m/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.

Abstract: Semiconductor wafers are CMP polished by polishing the rear side of the semiconductor wafer by means of CMP with a material removal with a profile along the diameter of the wafer wherein material removal is higher at the center than at the edge of the rear side; and polishing the front side of the wafer by means of CMP with a material removal with a profile along the diameter of the wafer wherein material removal is lower in the center of the front side than in an edge region of the front side.

Abstract: A method is disclosed for maintaining a hard surface, the method comprising treating the surface with a flexible pad (1), in the presence of abrasive particles, bonded to the pad, on a contact surface between the pad (1) and the hard surface. The abrasive particles comprise diamond particles, and the treating is performed in the absence of an effective amount of crystallization agent on the contact surface. A tool for use in the method is also provided, as well as a floor surfacing machine comprising such a tool and a method for manufacturing such a tool.

Abstract: A brake disk mounting surface is ground by bringing it into contact with an annular grinding wheel, while an inner ring having the brake disk mounting surface is rotated around its center axis, in a state where a part of the annular grinding wheel overlaps with a recess over an entire region of the annular grinding wheel in a radial direction, and in a state where a grinding surface of the annular grinding wheel is inclined with respect to the brake disk mounting surface so that a distance between the brake disk mounting surface and the annular grinding wheel grows larger in a direction toward an outer edge of the brake disk mounting surface.

Abstract: A method for machining a face (1) of an optical object (6), includes providing a machine tool which itself includes a bed (1) for locating an object to be machined. The bed (1) has a receiving surface (3) that is angularly adjustable about an axis perpendicular to the receiving surface (3). A spindle (8) is suitable for rotating a machining tool (9) about an axis essentially parallel to the receiving surface (3) of the bed (1) and is suitable for moving the machining tool (9) translationally in a plane essentially parallel or perpendicular to the receiving surface (3) of the bed (1).

Abstract: An object of the present invention is to provide a treating method for brittle member capable of stably holding the brittle member when applying predetermined treatments such as transportation and grinding back surface of a brittle member such as a semi-conductor wafer and separating the brittle member without breakage after finishing required treatment to thereby attaining high thickness accuracy of the brittle member. A treating method for brittle member comprising: a step of removably fixing a brittle member on a flexible glass base plate, a step of treating said brittle member, a step of fixing said brittle member side by holding means, and a step of separating said flexible glass base plate from said brittle member by bending said flexible glass base plate.

Abstract: An inner peripheral edge of a toroidal glass substrate for a magnetic disk is subjected to mechanical polishing in such a manner that the surface roughness is no greater than 9 nm in terms of Rmax. Then, the inner peripheral edge is subjected to chemical polishing to remove at least 2 ?m of a surface layer. The inner peripheral edge has a non-conventional mirror-finished surface obtained by mechanical polishing. Thus, sufficient ring strength is obtained even when the chemical polishing depth is smaller than in the past. A polishing depth of less than 5 ?m is sufficient.

Abstract: A workpiece having a planar face the workpiece is rotated about a workpiece axis substantially perpendicular to the planar workpiece face, and a grinding disk centered on a disk axis is rotated about the disk axis. The disk has an annular planar disk face perpendicular to and centered on the disk axis and an annular frustoconical disk face extending from an edge of the planar disk face, centered on the disk axis, and angled inward from the planar disk face. A portion of the annular face is oriented perpendicular to the workpiece axis and pressed against the planar workpiece face to premachine most of the planar workpiece face. Thereafter the disk is pivoted and oriented parallel the planar workpiece face to finish machine the planar workpiece face with the planar disk face.

Abstract: In a wafer processing method, rough grinding using a first grinding stone is divided into first and second steps. In the first step, a wafer is processed into a concave shape at a first transfer rate with a reinforcing rib area slightly left. Thereafter, as primary rough grinding in the second step, the grinding stone is positioned slightly on the inner circumferential side and the wafer is further processed into the concave portion at a second transfer rate faster than the first transfer rate. Since the first transfer rate is suppressed to a rate not to cause a burst chipping, a burst chipping resulting from the second step fast in the processing rate to ensure productivity will occur at the stepped edge portion on the inside of the reinforcing rib area surface. Thus, the flatness of the reinforcing rib area can be ensured.

Abstract: A back grinding method for a wafer includes covering a face-side surface of the wafer with a resin film, and cutting the surface of the resin film to form a flat surface parallel to the face-side surface of the wafer. The wafer is held with the surface of the resin film in contact with a suction surface of a chuck table in a grinding apparatus, and the exposed back-side surface of the wafer is ground. Unevenness in thickness of the resin film is suppressed, whereby the thickness of the wafer subjected to back grinding is made to be uniform.

Abstract: In the method of precisely polishing a work, torque of a sun gear and an internal gear are kept constant and a load applied to a carrier is reduced and maintained. The method comprises the steps of: changing a rotational speed of at least one of the sun gear, the internal gear, an upper polishing plate and a lower polishing plate; measuring rotation torque of a driving motor of at least one of the sun gear and the internal gear; detecting the minimum rotation torque measured in the measuring step; and adjusting the rotational speed of at least one of the sun gear, the internal gear, the upper polishing plate and the lower polishing plate so as to make the rotation torque thereof equal to the minimum rotation torque or running rotation torque, the running rotation torque being greater by a prescribed value than the minimum rotation torque.

Abstract: Optical polishing pitch formulations include synthetic polymers or other synthetic resins. As alternatives to traditional optical pitches, these materials offer improved stability in use, storage, and processing. In addition, these pitch compositions may be masterbatched and manufactured with precision to ensure superior reproducibility and quality control in polishing performance.

Abstract: A polishing apparatus is provided for polishing wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer by applying a pressure between a polishing member (polishing pad) 201 and the wafer held by a holding member (top ring) 52 and moving the polishing member relative to the wafer. The polishing apparatus includes a top ring 52 for holding the wafer, a pressure adjusting mechanism for adjusting a supporting pressure with which the wafer is supported on a supporting surface by a retainer ring, and a control unit for controlling the pressure adjusting mechanism to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer. The top ring comprises an air bag 202 for pressing the wafer against the polishing pad, a retainer ring which surrounds the wafer, and an air bag for pressing the retainer ring.

Abstract: Spots generated on a glass substrate after a polishing step are reduced. The present invention relates to a method for polishing a glass substrate including injecting a silica abrasive and a high-boiling solvent in a final glass substrate polishing step. The high-boiling solvent is preferably a solvent having a molecular weight of 300 or lower and a boiling point of 150° C. or higher. As Examples of the high-boiling solvent having a molecular weight of 300 or lower and a boiling point of 150° C. or higher includes ethylene glycol, propylene glycol and glycerine.

Abstract: A method is provided for forming a plurality of regions of magnetic material in a substrate having a first approximately planar surface. The method comprises the steps of fabricating projections in the first surface of the substrate, depositing onto the first surface a magnetic material in such a way that the tops of the projections are covered with magnetic material, and depositing filler material atop the substrate so produced. The filler material may then be planarized, for example by chemical-mechanical polishing. In an alternative embodiment magnetic material is deposited on a substrate and portions of it are removed, leaving islands of material. Filler material is then deposited, which may be planarized.

Abstract: A method of processing a semiconductor wafer using a double side grinder of the type that holds the wafer in a plane with a pair of grinding wheels and a pair of hydrostatic pads. The method includes measuring a distance between the wafer and at least one sensor and determining wafer nanotopology using the measured distance. The determining includes using a processor to perform a finite element structural analysis of the wafer based on the measured distance.

Abstract: A method and a device for treating wafers on assembly carriers is disclosed. A wafer to be treated can be fixed on a liquid film that is located between the front side of the wafer and the assembly carrier by freezing of the film.

Abstract: A workpiece double-disc grinding apparatus including a holder that supports a thin-plate-like workpiece from an outer periphery along a radial direction and is rotatable; a pair of static pressure support members that support the holder from both sides along an axial direction of the rotation thereof in a contactless manner based on a static fluid pressure; and a pair of grinding stones that simultaneously grind both surfaces of a workpiece supported by the holder, in which an interval between the holder and the static pressure support member is not greater than 50 ?m, and the static pressure of the fluid that is not lower than 0.3 MPa. As a result, the workpiece double-disc grinding apparatus and a workpiece double-disc grinding method can stabilize a position of the holder, which can be a cause that degrades a nanotopography of the workpiece in the double-disc grinding for the workpiece.

Abstract: A backside grinding apparatus removes semiconductor material from a surface of a semiconductor wafer. The wafer is mounted to a backing plate. The backside surface undergoes a first grinding operation in a rotational motion to remove excess semiconductor material. The semiconductor wafer is then aligned such that edges of the die are oriented along a reference line. The backside surface undergoes a second grinding operation in a linear direction on a 45-diagonal with respect to the reference line to create linear grind marks which are diagonal to the edges of the die. The linear grind marks are formed by an abrasive surface having at least 4000 mesh count. The second grinding operation removes the radial grind marks produced by the first grinding operation. The linear grind marks oriented diagonal with respect to the reference line increases the strength of the die to resist cracking.

Abstract: The present invention is a static pressure pad for supporting both sides of a raw wafer without contact by a static pressure of a fluid supplied to the both sides of the raw wafer in a double-disc grinding machine for a semiconductor wafer, wherein in patterns of lands to be banks of surrounding pockets formed on a surface side of supporting the raw wafer of the static pressure pad, an outer circumferential land pattern required to support the raw wafer is a concentric circle with respect to a rotation center of the raw wafer, and a land pattern inside the outer circumferential land pattern is a non-concentric circle with respect to the rotation center of the raw wafer and asymmetrical with respect to all the straight lines which bisect the static pressure pad.

Abstract: The invention relates to a process for producing a semiconductor wafer by double-side grinding of the semiconductor wafer, in which the semiconductor wafer is simultaneously ground on both sides, first by rough-grinding and then by finish-grinding, using a grinding tool. The semiconductor wafer, between the rough-grinding and the finish-grinding, remains positioned in the grinding machine, and the grinding tool continues to apply a substantially constant load during the transition from rough-grinding to finish-grinding. The invention also relates to an apparatus for carrying out the process and to a semiconductor wafer having a local flatness value on a front surface of less than 16 nm in a measurement window of 2 mm×2 mm area and of less than 40 nm in a measurement window of 10 mm×10 mm area.

Abstract: A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer preferably has a weight average molecular weight of 6,000 to 4,000,000. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in preliminary polishing of the surfaces of such wafers.

Abstract: Diamond clusters are used as a polishing material of free abrading particles, each being a combination of artificial diamond particles having primary particle diameters of 20 nm or less and impurities that are attached around these diamond particles. The density of non-diamond carbon contained in the impurities is in the range of 95% or more and 99% or less, and the density of chlorine contained in other than non-diamond carbon in the impurities is 0.5% or more and preferably 3.5% or less. The diameters of these diamond clusters are in the range of 30 nm or more and 500 nm or less, and their average diameter is in the range of 30 nm or more and 200 nm or less. Such polishing material is produced first by an explosion shock method to obtain diamond clusters and then removing the impurities such that density of non-diamond carbon contained in the impurities and density of chlorine contained in other than non-diamond carbon in the impurities become adjusted.

Abstract: An information-storage media is provided that includes: (a) a substrate disk 312 having first and second opposing surfaces; (b) a first selected layer 304 on the first surface, the first selected layer having a first thickness; (c) a second selected layer 308 on the second surface, the second selected layer having a second thickness, wherein the first and second selected layers have a different chemical composition than the substrate disk; and (d) an information-storage layer 412 adjacent to one or both of the selected layers. The first and second thicknesses are different to provide an unequal stress distribution across the cross-section of the media.

Abstract: A semiconductor process includes polishing a substrate with a slurry in an enclosure. Polishing the substrate is stopped. First mist is injected into the enclosure, such that the first mist has at least about 80% of saturation of a liquid or gaseous solvent in a carrier within the enclosure.

Abstract: A method for the simultaneous double-side grinding of a plurality of semiconductor wafers, involves a process wherein each semiconductor wafer lies such that it is freely moveable in a cutout of one of a plurality of carriers caused to rotate by means of a rolling apparatus and is thereby moved on a cycloidal trajectory, wherein the semiconductor wafers are machined in material-removing fashion between two rotating working disks, wherein each working disk comprises a working layer containing bonded abrasive. The method according to the invention makes it possible, by means of specific kinematics, to produce extremely planar semiconductor wafers.

Abstract: A magnetic disk substrate manufacturing method of this invention includes a main surface polishing process that polishes disk-shaped glass substrates by the use of a polishing machine having a carrier pressed between a pair of polishing surface plates and adapted to make an orbital motion while rotating on its axis in a state of holding the disk-shaped glass substrates. In the polishing machine, the carrier is placed in a state where a plate-like member is disposed on one side of main surfaces of the disk-shaped glass substrate, so that only the other side of the main surfaces of the disk-shaped glass substrate is polished while allowing the one side of the main surfaces of the disk-shaped glass substrates to be a non-polishing main surface.

Abstract: A thinned wafer having stress dispersion parts that make the wafer resistant to warpage and a method for manufacturing a semiconductor package using the same is described. The wafer includes a wafer body having a semiconductor chip forming zone and a peripheral zone located around the semiconductor chip forming zone; and the stress dispersion parts are located in the peripheral zone so as to disperse stress induced in the peripheral zone and the semiconductor chip forming zone.

Abstract: A cylindrical grinder is disclosed that includes a support unit including an upper support device and a lower support device, in which an ingot of silicon single crystal is interposed in a direction of axis line between the upper support device and the lower support device and is clampingly held to be rotated around the axis line, and a grinding unit that relatively moves along the direction of axis line of the ingot to traverse grind an outer circumference of the ingot. The upper support device is placed at an upper position and the lower support device is placed at a lower position, so that the support unit clampingly holds the ingot in a state in which the direction of the axis line of the ingot is disposed along a vertical direction.

Abstract: A method for manufacturing a magnetic recording medium disk substrate is provided for achieving a magnetic disk having a suitable surface roughness, a high in-plane magnetic anisotropy and a high S/N. The manufacturing method has a texturing process wherein the magnetic recording medium disk substrate is rotated in the circumferential direction while a polishing tape is pressed against the rotating substrate. The polishing tape includes polyester fiber having a fiber diameter of 400 nm to 950 nm, on the surface coming into contact with the substrate. All the while, slurry including abrasive grains including a cluster diamond is supplied to the surfaces of the substrate. The present invention relates to a magnetic recording medium disk substrate produced by the manufacturing method; and a magnetic recording medium at least comprising a magnetic layer on the magnetic recording medium disk substrate and manufacturing method of the magnetic recording medium.

Abstract: Embodiments of the invention describe a method for reclaiming a substrate by removing surface films with media blasting. A substrate is provided having a surface film. Media blasting is performed on the substrate to remove the surface film from the surface. In one embodiment media blasting removes a film from the substrate top surface. In another embodiment media blasting removes a film from the substrate top surface and side surface.

Abstract: A device for removing an information-bearing layer of an optical disc comprises a housing defining a first chamber and a second chamber, a mount to selectively mount an optical disc having an information-bearing layer adjacent the first chamber, a cutter within the first chamber, a drive mechanism operatively connected to the cutter, and a passageway between the first and second chambers. The cutter causes the information-bearing layer of the disc to form particulate matter, and the particulate matter is caused to move through the passageway into the second chamber. The resulting particulate matter has a particle size less than about 326 microns to meet the standards of the Department of Defense and NIST for digital data destruction.

Abstract: The present invention provides a polishing head 1 comprising a carrier 3, a guide ring 4, a dress ring 5, and a head body 2, wherein the head body 2 is rotatable, and holds the carrier 3, the guide ring 4, and the dress ring 5; the head body 2 has a reversed-bowl shape and has a hollow 8; the dress ring, and at least the guide ring or the carrier are held by being coupled to a lower brim of the head body via a diaphragm 6; the hollow of the head body is sealed. During polishing, the pressure of the sealed hollow is adjusted with a pressure regulating mechanism 9 communicating with the hollow, thereby elastically deforming the diaphragm. As a result, a wafer W can be polished while the wafer and the dress ring are pressed with a given pressing force against a polishing pad 11 on a turn table 12 with rotating the wafer held by the carrier and the dress ring.

Abstract: In a semiconductor wafer processing method of forming a semiconductor wafer having a desired thickness by grinding a rear surface of the semiconductor wafer having a plurality of devices formed on a front surface thereof, the rear surface of the semiconductor wafer is ground so that the semiconductor wafer has a thickness of 10 ?m to 100 ?m, and a strain layer having a thickness of 0.05 ?m to 0.1 ?m is left on the rear surface of the semiconductor wafer by the grinding. The strain layer is left to provide the gettering effect, preventing a harmful influence exerted on the quality of the semiconductor devices. Degradation in transverse rupture strength can be prevented by the grinding.

Abstract: Semiconductor processing and equipment are disclosed. The semiconductor equipment and processing provide semiconductor wafers with reduced defects.

Abstract: A polishing pad used in a CMP step in the manufacture of a semiconductor integrated circuit device is relatively expensive; thus, it is necessary to avoid a wasteful exchange of the pad. Accordingly, it is important to measure the abrasion amount of this pad precisely. However, in ordinary measurement thereof through light, the presence of a slurry hinders the measurement. In measurement thereof with a contact type sensor, a problem that pollutants elute out is caused. In a CMP step in the invention, the height position of a dresser is measured while the dresser operates, thereby detecting the abrasion amount or the thickness of a polishing pad indirectly. In this way, the time for exchanging the polishing pad is made appropriate.

Abstract: A device grinding method comprising the steps of holding the undersurface of a protective member which supports a plurality of devices by affixing their front surfaces onto the top surface of the protective member, on the chuck table of a grinding machine and grinding the rear surfaces of the plurality of devices held on the chuck table through the protective member by a grinding means while the chuck table is rotated, to form the thicknesses of the plurality of the devices to have a predetermined value, wherein the metering portion of a non-contact thickness metering equipment is brought to a position right above the rotating rotation locus of a predetermined device out of the plurality of devices supported on the chuck table through the protective member, the rear surfaces of the plurality of devices are ground by the grinding means while the thickness of the rotating predetermined device is measured with the non-contact thickness metering equipment, and the grinding by the grinding means is terminated when

Abstract: A toroidal-type continuously variable transmission, has a first continuously variable transmission mechanism and a second continuously variable transmission mechanism: wherein the first and second continuously variable transmission mechanisms are disposed coaxially with each other; the first and second input disks are connected together so as to be rotated in synchronization with each other; the first and second output disks are formed as a unified type output disk including traction surfaces on the two side surfaces thereof; on the side portion at the outer-most outside diameter of the unified type output disk, there is formed a datum plane serving as a machining datum when the traction surfaces are processed; and, an operation for finishing the datum plane is carried out after the unified type output disk is heat treated.

Abstract: A method of machining a wafer is disclosed, in which the wafer is held by sucking its back-side surface directly onto a suction surface of a chuck table, and the tips of protruding electrodes and a resist layer are cut to make them flush with each other (appendant part cutting step). Next, the wafer is held by sucking the surface of the cut appendant part directly onto the suction surface of the chuck table, and the back-side surface of the wafer is ground (back-side surface grinding step), followed by removing the resist layer. The wafer is held onto the chuck table without using any protective tape but by directly holding the wafer, whereby the wafer can be ground to have a uniform thickness.

Abstract: In effecting two-sided surface grinding for surface-grinding the opposite surfaces of a workpiece simultaneously by a pair of oppositely disposed grinding wheels, infeed grinding is performed by oscillating the workpiece within the range where the surfaces to be ground of the workpiece do not protrude from the inner and outer peripheries of the grinding wheel surfaces of the grinding wheels, and then through-grinding is performed by feeding the workpiece to allow the surfaces to be ground to pass along the inner and outer peripheries of the grinding wheel surfaces. As an effect, worn wheel edges or the like can be prevented from being formed in the inner and outer peripheral edges, that grinding wheel surfaces can be maintained in proper shape for a prolonged time, that the grinding accuracy is better, and that dress interval can be prolonged, thus improving the life of grinding wheels.

Abstract: In one embodiment, a device to resurface a sealing surface of a fluid connector in a fluid delivery component is provided. The device may include a housing adapted to be reversibly coupled to the fluid connector. Included may be an arbor which is at least partially disposed in the housing, and both rotationally and axially movable within the housing. The arbor may have a first end proximal to the sealing surface and a second distal end adapted to receive rotational actuation. A resurfacing head may be positioned at the first end of the arbor, and may have a resurfacing face that includes a circular resurfacing groove adapted to fit a circular ridge on the sealing surface of the connector. Rotational contact between the groove and the ridge may cause the resurfacing of the sealing surface. The housing may keep the resurfacing head and the sealing surface aligned during the resurfacing.

Abstract: The object of the invention is to provide a method of polishing the end surfaces of a substrate for a recording medium, which is capable of efficiently polishing the inner peripheral end surface and/or the outer peripheral end surface of the substrate preventing the reliability of performance of the recording medium from being impaired by the adhesion of the residual polishing material. According to the invention, there is provided a method of polishing end surfaces of a substrate for a recording medium wherein an inner peripheral end surface or an outer peripheral end surface of a substrate for a disk-like recording medium having a circular hole at the central portion thereof is brought into contact with a polishing medium obtained by dispersing polishing grains in a viscoelastic resin carrier and the polishing medium flows, thereby to polish the inner peripheral end surface or the outer peripheral end surface.