Abstract: After a hub supporting member is mounted on an end portion of a spindle, correction work is applied to a ring-shaped supporting surface which is an end face of the hub supporting member, whereby perpendicularity of the supporting surface relative to a rotational center axis of the spindle is improved. Thereafter, while the hub main body is made to rotate together with the spindle in such a state that the mounting surface abuts with the supporting surface, grinding finishing work is applied to a cylindrical surface portion (a portion on which inner rings are fitted) of the hub main body. As a result, the perpendicularity of the mounting surface relative to the geometric center axis of the cylindrical surface portion is improved.

Abstract: A method of polishing the double sides of a plurality of works simultaneously by rotating a plurality of carriers between upper and lower rotating surface plates, comprising the steps of forming the works (400) integrally with the carriers (500) on the outside of a polishing device main body (110), feeding the works (400) onto a rotating surface plate (111) on the underside of the polishing device main body (110) with the works formed integrally with the carriers (500), injecting liquid such as water from the upper side rotating surface plate when the upper side rotating surface plate is raised after the double sides are polished, holding the plurality of works (400) on the lower side rotating surface plate (111) after the double sides are polished, enabling the works (400) to be discharged automatically from the lower side rotating surface plate (111), providing a brush storage part (180) and a dresser storage part (190) near the polishing device main body (110), and frequently treating a polishing cloth ins

Abstract: A method of manufacturing a semiconductor wafer, including a step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by holding the semiconductor wafer in a wafer holding hole formed in a carrier plate, and simultaneously polishing a front and back surface of said semiconductor wafer by driving said carrier plate to make a circular motion associated with no rotation on its own axis within a plane parallel with a surface of said carrier plate between a pair of polishing members disposed to face to each other, by using an abrasive body with a semiconductor wafer sink rate different in polishing from that of an abrasive body for one of a polishing member on an upper surface plate and a polishing member on a lower surface plate so as to simultaneously polish both the front and rear surfaces of the semiconductor wafer, or differentiating by differentiating the rotating speed of the upper surface plate from that of the lower surface plate.

Abstract: An apparatus for the repair and resurfacing of compact discs using a motorized, abrasive surface.

Abstract: Methods and apparatus for providing a flushing system for flushing a top surface of an optical head. The flushing system includes a source of gas configured to provide a flow of gas, a delivery nozzle, a delivery line that connects the source of gas to the delivery nozzle, a vacuum source configured to provide a vacuum, a vacuum nozzle, and a vacuum line that connects the vacuum source to the vacuum nozzle. The source of gas and the delivery nozzle are configured to direct a flow of gas across the top surface of the optical head. The vacuum nozzle and vacuum sources are configured so that the flow if gas is laminar.

Abstract: A grinding machine for grinding a workpiece, including a chucking table having a chucking area and a grinder head. The grinder head includes a spinning disk rotating about a rotation axis and a plurality of grindstones, which are circularly arranged on a surface of the spinning disk, whereby a slit is created between the adjacent grindstones, wherein both of the adjacent grindstones is arranged to make contact with an edge of the workpiece while grinding the workpiece.

Abstract: Diamond clusters are used as a polishing material of free abrading particles, each being a combination of artificial diamond particles having primary particle diameters of 20 nm or less and impurities that are attached around these diamond particles. The density of non-diamond carbon contained in the impurities is in the range of 95% or more and 99% or less, and the density of chlorine contained in other than non-diamond carbon in the impurities is 0.5% or more and preferably 3.5% or less. The diameters of these diamond clusters are in the range of 30 nm or more and 500 nm or less, and their average diameter is in the range of 30 nm or more and 200 nm or less.

Abstract: A wafer processing method for processing a wafer (20) having bumps (B) formed on a front surface (21) comprises the steps of: holding on a table (51), a bump region-conforming member (40) that has an outer shape conforming only to a bump region (25) where said bumps are formed in the wafer; forming a resin layer (29) by applying resin around the bump region-conforming member up to a thickness equal to or greater than that of the bump region-conforming member; grinding the bump region-conforming member along with the resin layer to a predetermined thickness; removing the bump region-conforming member from the table to form a concave part (45) in the resin layer; applying a film (11) on the front surface of the wafer; and disposing the wafer in the concave part of the resin layer and holding the wafer on the table so that a back surface (22) of said wafer faces upward. After that, the back surface of the wafer can also be ground.

Abstract: A semiconductor wafer is guided in a cutout in a carrier while a thickness of the semiconductor wafer is reduced to a target thickness by material removal from the front and back surfaces simultaneously. The semiconductor wafer is machined until it is thinner than a carrier body and thicker than an inlay used to line the cutout in the carrier to protect the semiconductor wafer. The carrier is distinguished by the fact that the carrier body and the inlay have different thicknesses throughout the entire duration of the machining of the semiconductor wafer, the carrier body being thicker than the inlay, by from 20 to 70 ?m. Themethod provides semiconductor wafers polished on both sides, having a front surface, a back surface and an edge, and a local flatness of the front surface, SFQRmax of less than 50 nm with an edge exclusion of R-2 mm and less than nm with an edge exclusion of R-1 mm, based on a site area of 26 by 8 mm.

Abstract: The present invention related to a multiple fluid supplying apparatus for carrier of semiconductor wafer polishing system which comprises a rotary union at a driving side and a rotary union at a following side. The rotary union at a driving side comprises a central rotation axle; a fluid supplying tube body being disposed coaxially with the central rotation axle, being fixedly supported, and being formed with a plurality of fluid paths at an inside thereof; a sealing housing being disposed coaxially on an outer circumference of the fluid supplying tube body so as to be rotatably supported; and a sealing unit for maintaining air-tightness between the fluid supplying tube body and the sealing housing.

Abstract: A method of processing a wafer having a device area in which a plurality of devise are formed and a peripheral excess area surrounding the device area on the front surface, comprising an annular groove forming step for forming an annular groove having a predetermined depth and a predetermined width at the boundary between the device area and the peripheral excess area in the rear surface of the wafer by positioning a cutting blade at the boundary; and a reinforcement forming step for grinding an area corresponding to the device area on the rear surface of the wafer in which the annular groove has been formed, to reduce the thickness of the device area to a predetermined thickness and allowing an area corresponding to the peripheral excess area on the rear surface of the wafer to be left behind to form an annular reinforcement.

Abstract: This invention provides a method for eliminating the surface stress of a silicon wafer comprising forming one or more anti-stress groove(s) on the surface of the silicon wafer. These anti-stress grooves can reduce or eliminate the surface stress of silicon wafer effectively to avoid the formation of slip lines and dislocation arrangements, which may induce the p-n junction to conduct or the leakage current to increase. The process is highly efficient and low in cost. It is simple to manage and does not require additional equipment beyond that already used for processing of silicon wafers.

Abstract: According to an aspect of an embodiment, a method for manufacturing a storage medium includes providing a medium plate member for forming the storage medium and a guide member; and aligning the medium plate member and the guide member so that the medium plate member and the guide member are placed adjacently and the surfaces of the medium plate member and the guide member form a substantially common plane. The method further includes guiding a burnishing member for burnishing the medium plate member onto the surface of the guide member; and sliding the burnishing member on the guide member onto the medium plate member so as to burnish the surface of the medium plate member.

Abstract: A polishing apparatus according to the present invention is suitable for use in polishing a periphery of a substrate such as a semiconductor wafer. The polishing apparatus includes a holding section configured to hold the workpiece, a polishing head configured to bring the polishing tape into contact with the workpiece, a supply reel configured to supply the polishing tape to the polishing head, a rewind reel configured to rewind the polishing tape that has contacted the workpiece, and a swinging mechanism configured to cause the polishing head to perform a swinging motion with its pivot lying on a predetermined point.

Abstract: A wafer grinding method is disclosed, in which only a region, corresponding to a device formation region, of the back side of a wafer is ground in rough grinding conducted first, while the part surrounding the region thus ground is left unground as an annular projected part, to prevent the outer peripheral edge of the wafer from becoming knife edge-like in shape. In the subsequent finish grinding, the annular projected part is ground and, further, the whole area of the back side of the wafer is ground to be flat. Chippings of the outer peripheral edge may be generated only during the finish grinding, whereby the chippings are prevented from occurring or limited to minute ones.

Abstract: This invention comprises methods, devices, and systems for buffing, to repair and restore all types of compact discs. The restoration is essentially accomplished by interaction of rotating buffers with a compact disc on a rotating platform. For added effectiveness certain chemicals are added to the rotating buffers. The portable system is fully automatic such that an operator can perform other functions. The device also includes plurality of timers and indicators as well as a convenient carrying handle. The CD Buffing Unit allows the restoration and maintenance of all known CD Media, DVDs, single or double sided, including 3-inch discs with the use of a 3-inch adapter.

Abstract: The present embodiments provide methods, systems and apparatuses for use in grinding work pieces, such as wafers. Some embodiments provide methods that position a grind spindle to contact a first grinding spindle to a face of a work piece, remove a portion of the face, and control the removing of the portion of the face according to a control algorithm. This control algorithm can comprise determining a force applied to the work piece during the removing of the portion of the face, adjusting a feed rate of the first grind spindle when the force applied to the work piece has a predefined relationship with a first threshold level; and dressing a portion of the first grinding portion when the force applied to the work piece has a predefined relationship with a second threshold level that is greater than the first threshold.

Abstract: A window polishing pad having a reduced stress pad window formed therein for performing optical end point detection are provided, wherein the window polishing pad comprises a pad window and a pressure relief channel, wherein the pressure relief channel extends to an outer periphery of the window polishing pad from a cavity formed behind the pad window when the window polishing pad is interfaced with a platen and wherein a membrane is provided over at least one of an inlet and an outlet of the pressure relief channel. Also disclosed are methods of making and of using the window polishing pads to polish a semiconductor wafer.

Abstract: A polishing state monitoring apparatus measures characteristic values of a surface, being polished, of a workpiece to determine the timing of a polishing end point. The polishing state monitoring apparatus includes a light-emitting unit for applying light from a light source to a surface of a workpiece being polished, a light-receiving unit for receiving reflected light from the surface of the workpiece, a spectroscope unit for dividing the reflected light received by the light-receiving unit into a plurality of light rays having respective wavelengths, and light-receiving elements for accumulating the detected light rays as electrical information.

Abstract: The present invention provides an initial position setting method of grinding wheels, before starting a grinding operation, in a vertical double disc surface grinding machine for surface grinding the upper and lower grinding surfaces of a work-piece simultaneously by rotation-driving a pair of grinding wheels by a grinding wheel rotation drive motor and moving the grinding wheels up and down by a grinding wheel vertical drive motor.

Abstract: A method and apparatus for ultra thin wafer backside processing are disclosed. The apparatus includes an outer ring holding a high temperature grinding and/or dicing tape to form a support structure. An ultra thin wafer or diced wafer is adhered to the tape within the ring for wafer backside processing. The wafer backside processing includes ion implantation, annealing, etching, sputtering and evaporation while the wafer is in the support structure. Alternative uses of the support structure are also disclosed including the fabrication of dies having metalized side walls.

Abstract: A method and apparatus for grinding a brake pad forms inclined faces at both ends of the brake pad through a single route of movement and no grinding limit quantity is involved whether boundary lines are parallel with each other or not. The apparatus includes: a fixing portion 11 for fixing a brake pad 3; a rotary whetstone 21 having a rotation axis parallel to a friction face 3a of the brake pad 3, a grinding face of which a distance to the rotation axis increases gradually or in a plurality of steps in one direction of the rotation axis, and another grinding face of which a distance to the rotation axis decreases gradually or in a plurality of steps in the one direction of the rotation axis; and a transporter 10 for moving one of the brake pad and the rotary whetstone in relation to each other in a intersecting direction to the rotation axis.

Abstract: A process of grinding a surface of a workpiece, by a grinding tool rotated about its axis. The process includes a grinding step of grinding the workpiece surface, by pressing at least one of the grinding tool and the workpiece against the other of the grinding tool and the workpiece, such that a constant force is exerted on the other of the grinding tool and the workpiece by the at least one of the grinding tool and the workpiece. Also disclosed is a grinding apparatus including: a moving device operable to move at least one of the grinding tool and the workpiece relative to the other of the grinding tool and the workpiece, at least in an infeed direction that increases a depth of cut of the grinding tool into the workpiece; and a controller which controls the moving device, such that the at least one of the grinding tool and the workpiece is pressed against the other of the grinding tool and the workpiece, with a constant force.

Abstract: The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.

Abstract: A deglazing tool for use on motorcycle and ATV disc brake rotors. The tool is handheld and has abrasive pads that engage the rotor braking surface. The abrasive pads cut through the glaze on the braking surface of the rotor. Grip pressure on the handles maintains pad engagement with the rotor to assist the deglazing action. Compression springs below the deglazing heads or between the handles may be utilized to control the pressure between the rotor and pad. The surface glaze is removed and the surface is “roughened-up” and restored to the desired surface finish to improve overall braking performance and feel. The tool can be used with the rotor and brake caliper in place.

Abstract: Texturing slurry for texturing a substrate for a magnetic hard disk is obtained by dispersing abrading particles of a specified kind in a specified kind of dispersant. The abrading particles include diamond clusters formed with artificial diamond particles with primary particle diameter of 20 nm or less and surrounded by impurities containing chlorine at a certain ratio. The cluster diameter and the average cluster diameter of the diamond clusters are each within a specified range. For texturing a substrate surface, the substrate is rotated, texturing slurry of this invention is supplied to the surface and a texturing tape of a specified kind is pressed against the substrate surface while it is caused to run.

Abstract: The present invention provides a wafer double-side polishing apparatus comprising at least a carrier plate having wafer holding holes; upper and lower turn tables to which polishing pads are attached; and a slurry supply means; with wafers held in the wafer holding holes, the carrier plate being moved between the upper and lower turn tables while supplying slurry, to simultaneously polish both front and back surfaces of wafers, wherein a PCD of upper turn table load supporting points that is a diameter of a circle joining load supporting points of the upper turn table coincides with a PCD of centers of the wafer holding holes on the carrier plate that is a diameter of a circle joining each center of the wafer holding holes on the carrier plate.

Abstract: A burnishing head comprises at least two rails, each rail having an inner wall and an outer wall. The outer walls are at an angle relative to one another and relative to a central axis of the burnishing head. This angle permits the burnishing head to exhibit improved recovery time if it contacts a disk being burnished. The rail walls are vertical, and the corner between the rail walls and the top surface of the rails is sharp.

Abstract: A resilient pneumatic annular sealing bladder is coupled for fluid communication to a first pressurized pneumatic fluid to define a first pneumatic zone and is attached to a first surface of the wafer stop plate adjacent the retaining ring interior cylindrical surface to receive the wafer and to support the wafer at a peripheral edge. The resilient pneumatic annular sealing bladder defines a second pneumatic zone radially interior to the first pneumatic zone and extends between the first surface of the wafer stop plate and the wafer when the wafer is attached to the polishing head during a polishing operation and is coupled for fluid communication to a second pressurized pneumatic fluid. The wafer attachment stop plate is operative during non polishing periods to prevent the wafer from flexing excessively from an applied vacuum force used to hold the wafer to the polishing head during wafer loading and unloading operations.

Abstract: A terminal board having a plurality of terminals on which ball electrodes are formed can be prepared efficiently and economically without having any short-circuiting between terminals when its terminals formed in very close proximity to one another, as on an interposer (1), have their heads made uniform in height by causing the terminals (4) to project from a surface of a board (2) coated with a resist film, and applying a cutting tool (19) to the surface of the board (2) having the terminals project therefrom to carry out lathe turning for the heads of the terminals (4), while having the terminal board held by a rotatable chuck table (17) and rotating the chuck table (17).

Abstract: A polishing pad (20) for polishing a wafer (32) or other article, the pad having a groove network (60) configured to increase the residence time polishing medium (46) on the pad. The groove network has a first portion (72) that may extend substantially radially outwardly and an oscillating portion (74) that begins at a transition point (76) and is configured to slow the radially outward flow of the polishing medium.

Abstract: A chemical mechanical polishing process includes rotating at least one of a semiconductor substrate and polishing pad relative to the other. A chemical mechanical polishing slurry is provided intermediate the substrate and pad. The substrate is polished with the slurry and pad during the rotating. The chemical mechanical polishing slurry includes liquid and abrasive solid components. At least some of the abrasive solid component includes individually non-homogeneous abrasive particles.

Abstract: Finishing a seal assembly as a unit is proposed, which prevents alignment of the end gaps of the annular body and the annular ring of the seal assembly, provides the ability to manufacture the seal assembly to very low tolerances, and establishes virtually perfect parallelism between the upper and lower surfaces of the seal assembly. A finishing process is characterized by lapping a seal assembly as an assembled unit with a lapper using gritted oil as a polishing medium.

Abstract: An information-storage media is provided that includes: (a) a substrate disk 312 having first and second opposing surfaces; (b) a first interface layer 304 on the first surface, the first interface layer having a first thickness; (c) a second interface layer 308 on the second surface, the second interface layer having a second thickness, wherein the first and second interface layers have a different chemical composition than the substrate disk; and (d) an information-storage layer 412 adjacent to one or both of the interface layers. The first and second thicknesses are different to provide an unequal stress distribution across the cross-section of the media.

Abstract: On a principal surface of a glass disk substrate, a texture comprising a combination of an isotropic texture for stabilizing a flight of a magnetic head flying and traveling over a magnetic disk and an anisotropic texture for imparting a magnetic anisotropy to a magnetic layer of the magnetic disk is formed.

Abstract: Methods and apparatus for chemical mechanical polishing are described. In one embodiment, an apparatus includes a table top and a transfer station and multiple polishing stations are mounted on the table top. The apparatus further includes multiple washing stations, where each washing station is located between either two polishing stations or between a polishing station and a transfer station. Multiple carrier heads are supported by a support member that is rotatable about an axis. The transfer station and the multiple polishing stations are arranged at approximately equal angular intervals about the axis.

Abstract: A polishing apparatus comprises a first polishing table having a first polishing surface, a substrate carrier for holding a substrate and positioning the substrate so as to bring a surface of the substrate into contact with the first polishing surface, a pressing mechanism for pressing, against the first polishing surface, the surface of the substrate which has been brought into contact with the first polishing surface by the substrate carrier, a retainer ring mounted on the substrate carrier so as to surround the substrate which has been pressed against the first polishing surface by the pressing mechanism, and a retainer-ring-position-adjustment mechanism for adjustably positioning the retainer ring relative to the substrate, which has been pressed against the first polishing surface, in directions toward and away from the first polishing surface.

Abstract: A polishing apparatus comprises a polishing tool having a polishing surface, and a holder device (top ring) for holding a semiconductor wafer (a substrate). The polishing apparatus further comprises a color CCD camera for taking a color image of a region on the polishing surface; an image processor for determining whether or not any foreign matter exists on the polishing surface based on a condition of a color in color image data acquired by the color CCD camera; and an apparatus operation control section which in response to determination of the image processing section, stops relative movement between the semiconductor wafer and the polishing surface and separates the top ring and the polishing surface from each other.

Abstract: A magnetic polishing method capable of easily and satisfactorily polishing the inner peripheral end face of a circular hole (1) at the center part of a disk substrate (2) even if the diameter of the circular hole is reduced. By this method, a large quantity of disk substrates with stable quality can be supplied, thermal asperity trouble and head crush can be prevented from occurring on a magnetic disk, and the density of the information recording surface of the magnetic disk can be increased.

Abstract: A polishing agent for polishing a surface of a target object without unduly scratching it includes mother particles and very fine abrading particles which are supported on the surfaces of the mother particles and remain so supported during a polishing process, becoming reattached if removed. Such an agent is produced by adding the mother particles into the abrading particles and stirring them together. In a polishing process, a specified amount of such an agent is supplied onto a lapping plate and a lapping process is carried out while the plate is rotated at a specified rotational speed.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include an elongated, non-continuous polishing pad oriented at an angle relative to the horizontal to allow planarizing liquids and materials removed from the microelectronic substrate to flow off the polishing pad under the force of gravity. Two such polishing pads can be positioned opposite each other in a vertical orientation and can share either a common platen or a common substrate carrier. The polishing pads can be pre-attached to both a supply roll and a take-up roll to form a cartridge which can be easily removed from the apparatus and replaced with another cartridge.

Abstract: A method of machining a disk for a toroidal-type continuously variable transmission, has the steps of fixing a disk to a core bar having a pair of reference portions for rotation at both end thereof, clamping the reference portions by a first center and a second center opposing the first center, abutting a first flat surface portion formed on one side surface of the disk against a reference for axial abutment, machining a first traction surface formed on another side surface of the disk, inverting the disk with the disk fixed to the core bar, clamping the pair of reference portions by the first center and the second center, abutting a second flat surface portion formed on the other side surface of the disk against the reference for axial abutment and machining a second traction surface formed on the one side surface of the disk.

Abstract: A grinding assembly for shaping work pieces that includes one or more grind spindles. Each of the grind spindles include two independent grinding wheels driven by a single spindle drive. The grind spindles translate horizontally to perform both edge and face grinding with a single grind spindle. A non-contact position sensor in a work spindle measures work spindle displacement during grinding and provides feedback to the grind spindle to regulate the force imparted on the work piece by the grind spindle. In variations, an abrasive wheel disposed radially with respect to an axis of spindle rotation is utilized to perform edge grinding of the work piece. In other variations cleaning, polishing and grinding are carried out in a single grinding assembly. In yet other variations, a wheel dressing apparatus is utilized to dress the wheel when one or more forces to maintain productivity of the grind wheel exceed a threhold.

Abstract: An apparatus and method for re-surfacing compact discs. One method is a two-step method in which the disc to be re-surfaced is first placed on a shaft. A resilient pad supports an abrasive medium and is positioned so the abrasive medium overlaps only the protective layer of the CD. The disc and abrasive material are rotated in opposite directions at about the same speed to remove deeper blemishes in a wet operation. Subsequent polishing is accomplished in a similar manner using a polishing compound instead of an abrasive. The re-surfacing and polishing apparatus each have motor driven shafts which are parallel and spaced apart and support the CD and pad in a cabinet. A transparent cover extends across the top of the cabinet. In another embodiment, the resurfacing and polishing is accomplished in a one-step operation in which polishing fluid is applied to a non-abrasive medium is utilized and the fluid is continuously recycled.

Abstract: A chemical mechanical polishing method for polishing an oxide film and a protective film formed on a substrate having recesses comprises four steps. The first step planarizes the oxide film using a polishing pad and a polishing agent containing cerium oxide particles by causing relative rotational motion between the substrate and the polishing pad. The second step continues polishing the oxide film to maintain the planarized property of the oxide film. The third step polishes the oxide film until at least a portion of the protective film becomes exposed. The fourth step polishes the oxide film until the oxide film is substantially removed and the protective film is substantially exposed. During the four steps, torque values are measured on the substrate or the polishing pad, and changes in torque with time are calculated. This information is used to determine the status of each of the steps during the polishing run.

Abstract: A method of magnetic-abrasive machining of parts has the steps of supporting a part, generating a magnetic field by magnetic means located at one side of the part, placing a magnetic-abrasive powder on a surface located at another, opposite side of the part, so that the magnetic-abrasive powder is attracted by the magnetic means and pressed to the surface of the part, and providing a relative movement of the parts and the magnetic abrasive powder retained by the magnetic means relative to one another so as to machine the surface of the part which is therefore open for observation and supply of the magnetic abrasive powder; and an apparatus is proposed as well.

Abstract: A microelectronic substrate and method for removing conductive material from a microelectronic substrate. In one embodiment, the microelectronic substrate includes a conductive or semiconductive material with a recess having an initially sharp corner at the surface of the conductive material. The corner can be blunted or rounded, for example, by applying a voltage to an electrode in fluid communication with an electrolytic fluid disposed adjacent to the corner. Electrical current flowing through the corner from the electrode can oxidize the conductive material at the corner, and the oxidized material can be removed with a chemical etch process.

Abstract: A surface polishing method in which a workpiece having at least one surface for polishing is set into rotation and has said surface pressed against a polishing element that is driven with motion in rotation or in translation, wherein said surface of the workpiece presents points that are situated outside a circumference of center coinciding with the center of rotation of the workpiece and traveling, during one revolution of said workpiece, along a path comprising first and second portions, with the rate of polishing over said second portion being smaller than over said first portion, in such a manner as to compensate for an over-polishing effect that occurs on the edge of said workpiece over said first portion of the path.

Abstract: Various methods and apparatus for simultaneously texturing two single-sided hard memory disks is provided. The two disks are placed in a concentric contact merge orientation such that the outwardly facing surface of each disk may be simultaneously subjected to texturing by equipment designed to texture one double-sided disk.

Abstract: A method of processing an antifriction bearing unit for a wheel, the antifriction bearing unit including an outer race, an inner race, a plurality of rolling elements and a flange portion for directly or indirectly mounting a brake disk provided to one of the outer and inner races, the method includes: assembling the outer and inner races and the rolling element together; after assembling, placing the one of the outer and inner race in position incapably of circumferential rotation; grinding the flange portion by bring the flange portion into contact with a grindstone which is rotated while the other of the outer and inner race is left free.