Abstract: A method of processing an antifriction bearing unit for a wheel, the antifriction bearing unit including an outer race, an inner race, a plurality of rolling elements and a flange portion for directly or indirectly mounting a brake disk provided to one of the outer and inner races, the method includes: assembling the outer and inner races and the rolling element together; after assembling, placing the one of the outer and inner race in position incapably of circumferential rotation; grinding the flange portion by bring the flange portion into contact with a grindstone which is rotated while the other of the outer and inner race is left free.

Abstract: Various methods and apparatus for simultaneously texturing two single-sided hard memory disks is provided. The two disks are placed in a concentric contact merge orientation such that the outwardly facing surface of each disk may be simultaneously subjected to texturing by equipment designed to texture one double-sided disk.

Abstract: Systems and methods for beveling microfeature workpiece edges are disclosed. A system in accordance with one embodiment is configured to remove material from a microfeature workpiece having a first face, a second face facing opposite from the first face, an edge surface between the first and second faces, and an edge at a juncture between the edge surface and one of the first and second faces. The system can include a carrier positioned to carry the workpiece with the first and second faces generally normal to an axis, and a first polishing pad having a support surface and a polishing surface facing generally away from the support surface. The polishing surface can have a first shape with at least one portion oriented at an acute angle relative to the axis and the support surface to remove material from the edge of the workpiece.

Abstract: A method of backgrinding wafers wherein backgrinding tape or a pad is applied to the chuck and not to the wafers. The backgrinding tape or pad is left on the chuck as each wafer is sequentially placed on the tape or pad, background, rinsed on the backside, removed from the tape and then cleaned on the front side and backside. A tool for applying tape to a chuck, as described herein, facilitates this method.

Abstract: A polish apparatus for planarizing wafers and films over wafers comprising the following. A substrate chuck for holding a substrate with a surface to be polished thereof being directed about vertically. A first drive means for rotating the substrate chuck. A polishing head having a polishing surface which is adjacent to the substrate during the polishing of the substrate. The polishing surface of the polishing head is smaller than the surface of the substrate. A polishing solution supply means for supplying a polishing solution through the polishing head to the substrate held by the substrate chuck. A reciprocating means for reciprocally moving the polishing head on the surface to be polished. A pressing means for pressing the polishing pad against a substrate held by the substrate chuck by way of the polishing head. The polish head is preferably comprised of one piece of molded polymer. No polish pad is used.

Abstract: A system and method for treating (e.g. polishing to remove defects) the surface of a media, such as a magnetic hard disk, while in operation, such as during dynamic electrical testing is disclosed. Further, a method for manufacturing a head for treating the surface of a media is disclosed.

Abstract: Planarizing machines, carrier heads for planarizing machines and methods for planarizing microelectronic-device substrate assemblies in mechanical or chemical-mechanical planarizing processes. In one embodiment of the invention, a carrier head includes a backing plate, a bladder attached to the backing plate, and a retaining ring extending around the backing plate. The backing plate has a perimeter edge, a first surface, and a second surface opposite the first surface. The second surface of the backing plate can have a perimeter region extending inwardly from the perimeter edge and an interior region extending inwardly from the perimeter region. The perimeter region, for example, can have a curved section extending inwardly from the perimeter edge of the backing plate or from a flat rim at the perimeter edge. The curved section can curve toward and/or away from the first surface to influence the edge pressure exerted against the substrate assembly during planarization.

Abstract: The invention provides structure and method for achieving a uniformly polished or planarized substrate such as a semiconductor wafer including achieving substantially uniform polishing between the center of the semiconductor wafer and the edge of the wafer. In one aspect the invention provides a polishing apparatus including a housing, a carrier for mounting a substrate to be polished, a retaining ring circumscribing the carrier for retaining the substrate, a first coupling attaching the retaining ring to the carrier such that the retaining ring may move relative to the carrier, a second coupling attaching the carrier to the housing such that the carrier may move relative to the housing, the housing and the first coupling defining a first pressure chamber to exert a pressure force against the retaining ring, and the housing and the second coupling defining a second pressure chamber to exert a pressure force against the subcarrier. In one embodiment, the couplings are diaphragms.

Abstract: A glass substrate for use in an information recording medium is manufactured by polishing a surface of a disc-shaped glass substrate and then performing texture processing on the surface. The texture processing includes the steps of forming lines of texture on the surface of the glass substrate extending along a circumferential direction of the glass substrate by performing a mechanical texture formation method in which the surface of the glass substrate is supplied with an abrasive slurry while an abrasive member slidably contacts the surface, and correcting the shape of the texture by removing burrs formed on the texture during the formation of the texture. The correction of the shape of the texture is performed by using a correcting pad made of foam of a synthetic resin having a 100% modulus of 3 to 40 MPa and scrubbing the surface of the glass substrate with the correcting pad in a direction intersecting the direction in which the texture extends.

Abstract: Methods for removing material from microfeature workpieces are disclosed. A method in accordance with one embodiment of the invention includes disposing a surfactant-bearing polishing liquid between a doped silicon material of the microfeature workpiece and a polishing pad material. At least one of the workpiece and the polishing pad material is moved relative to the other to simultaneously and uniformly remove at least some of the doped silicon material from portions of the workpiece having different crystalinities and/or different doping characteristics. The surfactant can include a generally non-ionic surfactant having a relatively low concentration in the polishing liquid, for example, from about 0.001% to about 1.0% by weight.

Abstract: Provided is a multifunctional whetstone comprising a handle comprising a rear cutter, top slits of different width, and a bottom magnet; a head comprising an open mouth including a curved recess for gripping a sheet of paper and a bottom opening with two concealed abrasive blades anchored in both sides; and a yoke-shaped guide fastened at the cavity and both eyes and comprising two wings. In one operation blunt cutting edges of a blade of a knife are placed in the opening and are adapted to rub against either abrasive blade to-and-fro repeatedly. In another operation a piece of glass is cut along a predetermined line by manipulating the cutter, a portion of the glass is inserted into one conformed slit with the predetermined line aligned with an opening of the slit, and the handle is adapted to pivot to break the glass into two parts.

Abstract: A wafer polishing method which can prevent polishing swarfs from entering the gap between the periphery of a wafer and a protective tape when the back surface of the wafer is dry polished with a polishing pad after the protective tape is affixed onto the front surface of the wafer, the method comprising the steps of cutting an arcuate chamfered portion formed at the periphery of the wafer to form a precipice at the periphery of the wafer; affixing the protective tape onto the surface to be held on the chuck table of a polishing machine, of the wafer; and placing the wafer on the chuck table in such a manner that the side of the protective tape comes into contact with the chuck table to dry polish the surface of the wafer with a polishing means.

Abstract: A wafer carrier for use in polishing disks. The wafer carrier includes a main body and an integral visual inspection wear indicator. The main body has at least one opening formed therein adapted to receive a disk. The visual inspection wear indicator provides a visual indication of when the main body has reached the end of its useful life. The inspection wear indicator may have several portions to incrementally identify the approximate wear stage, that is, the approximate remaining useful life.

Abstract: The invention provides a chemical mechanical polishing and pad dressing method based on differing the rotational of a pad dresser, head, and/or polishing pad to improve center removal slow profiling.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a membrane with an exterior grooved surface for improved chemical mechanical polishing. The exterior grooved surface provides a path for the flow of air from the portion between the membrane and a substrate.

Abstract: A wafer polishing solution and method for polishing a wafer comprising an amino acid and calcium ions or barium ions. The wafer polishing solution can be adjusted to control cut rate and selectivity for modifying semiconductor wafers using a fixed abrasive CMP process.

Abstract: One or more high angle grinding units are supported by a carriage mountable on the underside of a rail grinding vehicle. Each grinding unit is attached to the carriage in a manner enabling controllable movement of the grinding units laterally, vertically, and angularly, with respect to the rails, so that a grinding stone rotated by the grinding unit can be operated to grind between a railhead and a closely adjacent rail structure to reform the gauge side of the railhead and the field side of the closely adjacent structure.

Abstract: A CMP system accurately measures eccentric forces applied to carriers for wafer or polishing pad conditioning pucks. An initial coaxial relationship between wafer axis of rotation and a carrier axis is maintained during application of the eccentric force, such that a sensor may measure the eccentric forces. Such initial coaxial relationship is maintained by a linear bearing assembly mounted between the carrier and the sensor. The linear bearing assembly is provided as an array of separate linear bearing assemblies, and may be assembled with a retainer ring in conjunction with a motor for moving the ring relative to the wafer mounted on the carrier so that an exposed surface of the wafer and a surface of the retainer ring to be engaged by the polishing pad are coplanar during the polishing operation.

Abstract: A chemical mechanical polishing process includes rotating at least one of a semiconductor substrate and polishing pad relative to the other. A chemical mechanical polishing slurry is provided intermediate the substrate and pad. The substrate is polished with the slurry and pad during the rotating. The chemical mechanical polishing slurry includes liquid and abrasive solid components. At least some of the abrasive solid component includes individually non-homogeneous abrasive particles.

Abstract: A method of precisely controlling the amount of flatness or curvature in a lapping plate is disclosed. The lapping plate is formed from two layers of metal alloys, such as tin-antimony and steel. A bimetallic effect is exploited to induce a linear expansion in the plate so that the flatness or curvature of the plate is manipulated with thermal cycling. The plate is machined and charged under very specific and tightly controlled temperatures to produce a very robust, flat plate charge. As temperature cycling induces a linear expansion along a single plane across the plate, the resultant flatness change is scalar with temperature, and can be repeated and controlled. When the plate laps magnetic sliders, the plate can be thermally cycled to produce a conical surface and a high crown-to-camber ratio can be achieved.

Abstract: A disc repair system which is provided for the purpose of consumer-repairing of scratches on optically-read discs (e.g., digitally recorded discs, known commonly, as “CD” discs or “DVD” discs, etc., containing audio or video or other formats of data information), such that an optical reader, which uses a laser to read digital information stored on a compact disc, can read the digital information without the optical distortion caused by a scratch. The system utilizes diamond grit as an abrading compound to recondition the disc surface.

Abstract: An in-situ technique for the acoustic emission monitoring of burnish heads while they are cleaning or burnishing magnetic media is described. The burnishing process is monitored and controlled to identify interaction or contact between the head and media due to, for example, burnish head damage, substrate curvature problems, and lube pick-up problems. A piezoelectric sensor is mounted on the burnish arm that holds the burnish heads. When head-disk interaction occurs, stress waves travel through the head to the sensor and an amplified signal is gathered in a tester database as an acoustic emission. Abnormal conditions will trigger an unusual emission that is detected to trigger an alert.

Abstract: An apparatus and method for chemical mechanical polishing are disclosed. An example apparatus for use with a chemical mechanical polishing (CMP) process includes a polishing part configured to perform a CMP process to a polishing endpoint for a polishing target deposited on a substrate, a cleaning part configured to clean the substrate, and a resistance measurement part configured to measure a sheet resistance of the substrate. The example apparatus also includes a CMP control part configured to determine based on the sheet resistance whether a residual target exists, to estimate re-polishing time, and to control the polishing part to perform a re-polishing process if the residual target exists.

Abstract: The invention features a self-contained, portable apparatus for performing precision grinding operations on metal disks of up to, e.g., 54 inches in diameter. The apparatus can be attached to the surface of the disk to be refinished and is leveled using special precision leveling adjusters. During operation, the adjusters are turned in precision increments to set the depth of cut. The grinder is then rotated on an arm about the center of the disk, by the use of a hydraulically driven speed reducer, rotor, bearing assembly. In a further aspect, the invention includes a dressing assembly for performing dressing-truing on a vitreous wheel when the wheel is in grinding position. The in position dressing assembly dresses a grinding wheel at up to 0.00125-inch increments.

Abstract: A chemical mechanical processing apparatus includes a polishing pad capable of polishing a substrate; a stepped retaining having an inner side, a bottom side, and an open region, the open region extending radially outward from the inner side and upward from the bottom side, the open region providing space for pad rebound, the open region further having a plurality of tips to hold a substrate in position during rotation of the substrate against the polishing pad, the stepped retaining ring capable of rotating the substrate against the polishing pad; and a dispenser capable of dispensing a slurry onto the pad.

Abstract: A semiconductor wafer has a top surface and an edge bevel surface, and a first material layer and a second material layer are respectively formed on the top surface and the edge bevel surface. A surface chemical mechanical polishing (surface CMP) process is performed to polish and remove portions of the first material layer down to a first thickness, and a rim CMP process is performed to completely remove the second material layer on the edge bevel surface down to the edge bevel surface thereafter to achieve a smooth surface of the edge bevel surface. Finally, a chemical cleaning process is performed to clean the edge bevel surface and the top surface, and the semiconductor wafer is dried thereafter.

Abstract: An apparatus for smoothing a surface of a rotatably supported substrate includes a base plate, a block having an extending arm structure and being attached to the base plate so as to be movable along the surface of the base plate, a roller attached to a tip portion of the arm structure in a direction perpendicular to the base plate, a mobile member attached to the arm structure so as to be movable perpendicularly to the axial direction of the roller, a tape-running device attached to the base plate for feeding and taking up a polishing tape through the roller so as to advance the tape around the mobile member, and a moving device attached to the arm structure of the block for moving the mobile member.

Abstract: Embodiments of a conditioning mechanism for a chemical mechanical polishing system have been provided. In one embodiment, a conditioning mechanism includes a rotor assembly and a conditioning element mounting assembly. A seal is disposed between the rotor assembly and conditioning element mounting assembly and bounds one surface of an expandable plenum defined between the rotor assembly and conditioning element mounting assembly. A spring is disposed between the rotor and conditioning element mounting assemblies and is adapted to bias a lower surface of the conditioning element mounting assembly towards the rotor assembly.

Abstract: Finishing a seal assembly as a unit is proposed, which prevents alignment of the end gaps of the annular body and the annular ring of the seal assembly, provides the ability to manufacture the seal assembly to very low tolerances, and establishes virtually perfect parallelism between the upper and lower surfaces of the seal assembly. A finishing process is characterized by lapping a seal assembly as an assembled unit with a lapper using gritted oil as a polishing medium.

Abstract: Embodiments of the invention as directed to supporting a polishing pad that can be easily replaced. In one embodiment, a method for polishing an object comprises coupling a polishing head to a substrate for holding a polishing pad which is smaller in area than the object; applying a resilient mechanical force to the perimeter of the substrate with the polishing head to hold the substrate in place during a polishing operation; placing the polishing pad in contact with the object; and rotating the polishing pad with the polishing head.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

Abstract: A double surface grinding method for a vertical type of double disc surface grinding machine in which upper and lower ground surfaces of a work like a disc brake are ground simultaneously. The entire vertical moving stroke of the grinding wheel includes an idle feed stroke in which the wheel moves at a specified idle feed speed from the waiting position to a detection start position before contacting with the ground surface; a detection stroke in which the wheel moves at a detection speed lower than the idle feed speed from the detection start position to a detection end position after contacting with the ground surface then the wheel detects a grinding start position; and a grinding stroke in which the wheel moves at a grinding speed from the grinding start position to a grinding end position.

Abstract: A polishing system such as a chemical mechanical belt polisher includes a hydrostatic fluid bearing that supports polishing pads and incorporates one or more of the following novel aspects. One aspect uses compliant surfaces surrounding fluid inlets in an array of inlets to extend areas of elevated support pressure around the inlets. Another aspect modulates or reverses fluid flow in the bearing to reduce deviations in the time averaged support pressure and to induce vibrations in the polishing pads to improve polishing performance. Another aspect provides a hydrostatic bearing with a cavity having a lateral extent greater than that of an object being polished. The depth and bottom contour of cavity can be adjusted to provide nearly uniform support pressure across an area that is surrounded by a retaining ring support. Changing fluid pressure to the retaining ring support adjusts the fluid film thickness of the bearing.

Abstract: Embodiments of methods and apparatus in accordance with the present invention provide a chemical mechanical planarization (CMP) process that provides single or multiple polishing pads to have a different rotational velocity, applied pressure and oscillation frequency on the surface of the substrate to address and compensate for the WIW (with-in-substrate) and WID (with-in-die) non-uniformities in planarization ability. The velocity of each polishing pad is adjustable providing a closer match to the substrate surface velocity over a particular zone to yield a linear velocity on the surface of the substrate.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

Abstract: A polishing cloth has a base material of a woven cloth formed by weaving in woven bundles of plastic fibers and its surface layer is formed by portions of these woven bundles which are cut and raised from a surface. When such a polishing cloth is used for texturing a target surface of a disk substrate, the target surface is rubbed by such a cloth while a liquid slurry containing free abrasive particles are supplied to the surface.

Abstract: A method of backgrinding wafers wherein backgrinding tape or a pad is applied to the chuck and not to the wafers. The backgrinding tape or pad is left on the chuck as each wafer is sequentially placed on the tape or pad, background, and then removed from the tape. A tool for applying tape to a chuck, as described herein, facilitates this method.

Abstract: The wafer planarization apparatus comprises a processing part which holds a wafer through a protective sheet adhering to the obverse of the wafer and processes the reverse of the wafer, an inspecting device which inspects the wafer having been processed by the processing part, a frame adhering part which adheres a frame through a sheet to the reverse of the wafer having been inspected by the inspecting device, a peeling part which peels the protective sheet from the wafer to which the frame has been adhered, and a transporting device which transports the wafer between the processing part, the inspecting device, the frame adhering part, and the peeling part, so that the series of processing for the wafer can be systematized in line.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

Abstract: A method and apparatus for automatically loading and unloading wafer crystals to and from a double-sided polishing machine of the type having an upper and a lower polishing plate, runner disks with reception openings for the wafer crystals, and a drive to move runner disks to a predetermined loading and unloading position. The position of the centers of the reception openings in a runner disk located in the loading position is measured and stored by means of an optical identification system. A gripping means of a robot arm is successively oriented towards the measured center positions of the reception openings, and the position of the centers of the individual openings is determined and stored by first and second optical identification systems. The individual wafer crystals are tilted while being inserted by the gripping means of the loading arm into the reception openings.

Abstract: A method for lapping which eliminates lapping damage includes a high-speed lapping operation at a high torque which is continuously performed after performing intermittently a low-speed lapping operation under low torque on a workpiece. Therefore, the excessive load during a first lapping stage due to the projection on the surface of the workpiece is greatly decreased. A continuous lapping is performed after the projection becomes smooth to some extent, and thus the lapping damage is prevented.

Abstract: A method of chemically modifying a wafer suited for fabrication of semiconductor devices includes a) contacting a surface of wafer with an article that includes a plurality of unit cells repeating across the surface of the article, the individual unit cells including at least a portion of a three-dimensional structure and being characterized by a unit cell parameter as follows: [[V1−Vs]/Aas]/Auc>5 where V1 is the volume defined by the area of the unit cell and the height of the structure of the unit cell, Vs is the volume of the structure of the unit cell, Aas is the apparent contact area of the structure of the unit cell, and Auc is the area of the unit cell, and b) moving at least one of the wafer and the article relative to each other in the presence of a polishing composition that is chemically reactive with a surface of the wafer and capable of either enhancing or inhibiting the rate of removal of at least a portion of the surface of the wafer.

Abstract: An end face polishing machine has a jig plate for supporting at least one workpiece. A polishing plate is mounted to undergo rotation and revolving movement. A polishing sheet is disposed over the polishing plate for rotation and revolving movement therewith. An elastic member having a hardness that varies with temperature is disposed between the polishing sheet and the polishing plate. A pressing unit presses the end face of the workpiece against a surface of the polishing sheet during rotation and revolving movement of the polishing plate to thereby polish the end face of the workpiece during a polishing operation. A temperature control unit controls the temperature of the elastic member during the polishing operation to thereby polish the end face of the workpiece into a spherical surface during the polishing operation.

Abstract: The process describes how transmission gears (6) can be manufactured in a highly economical and highly precise manner. In one single mounting, the complete hard fine-machining on all of the most important functional surfaces of the workpiece is conducted simultaneously. This multi-process is made possible through the combined use of a continuous generating grinding process for the machining of gearing, a known method for the machining of the boring and possibly of a frontal surface, and the fixing of workpieces (6) on form elements such as chamfers or plane surfaces by means of centering elements (9, 10) which are designed in such a way that they do not block the free access of the individual tools (5, 11, 28) to the surfaces (7, 8, 27) to be machined.

Abstract: Vending apparatus for optical disk restoration has a housing for receiving the disk form a customer; a disk inspection device to determine whether the disk is correctly positioned for polishing and providing a signal indicative of disk position, a disk perforation detecting device providing a signal indicative of any perforation in a reflective layer of the disk; and a device for ejecting a perforated disk from the housing. A user interface requests and receives payment from a customer in response to a signal by the detecting device that the reflective layer is imperforate and provides a signal indicating receipt of correct payment. Polishing wheels polish, with slurry, an exposed light receiving surface of a data carrying protective layer of the disk to ameliorate scratches in response to a signal from the user interface of correct payment and a device ejects a polished disk from the housing to a customer.

Abstract: An abrasive ground fabric which is a composite ground fabric comprising a fiber substrate and a elastic polymer filled in the fiber substrate, wherein (1) the fiber substrate is composed of bundles, each consisting of 20 to 3,000 fine fibers, and (2) the average diameter (D1) of fine fibers existent in a center portion from the center of the cross section perpendicular to a lengthwise direction of each bundle to ½ of the radius of each bundle is 0.3 to 10 &mgr;m, the average diameter (D2) of fine fibers existent in a peripheral portion from ½ of the radius to the end of each bundle is 0.05 to 1 &mgr;m, and the D1/D2 ratio is 1.5 or more. According to the present invention, the abrasive ground fabric is suitably used for the texturing of a substrate in the production of a magnetic recording medium, particularly a hard disk, enables high-accuracy surface finish and has excellent strength.

Abstract: Layers of material deposited exhibit both a local and a global pattern. The local pattern is a function of the underlying wafer surface, but the global pattern is a function of the equipment in which the layer was deposited. Accurate reconstruction of the surface topology of a layer on a product wafer is achieved despite the local pattern by determining the surface topology of a blanket layer on a blank wafer, measuring the thickness of the layer at a few selected locations on a product wafer, calculating scaling coefficients representing deviations of the measured thickness from the blanket layer topology, and then multiplying the blanket layer topology by the scaling coefficients. The surface reconstruction results from modifying the surface topology of the blanket layer so that it has the same thickness at the measured locations as does the product wafer layer.

Abstract: A method for manufacturing a disk-like glass substrate that is used as an information recording medium. The glass substrate is acid resistant. When an index of acid resistance is the maximum depth at which components other than silica dissolve from the glass substrate during immersion of the glass substrate in 1 percentage of weight of sulfuric acid, the acid resistance of the glass substrate is represented by the maximum depth of 0.5 nm to 10 nm. A linear texture is formed by pressing a tape against the glass substrate in a circumferential direction of the glass substrate while feeding abrasion slurry to the surface of the glass substrate. Acid treatment is performed on the glass substrate on which the texture is formed.

Abstract: A method and composition for planarizing a substrate. The composition includes a pressure sensitive solution and one or more chemical agents for complexing with a metal or oxidized metal. The method for removal of a copper containing layer from a substrate surface, comprising applying a composition to a polishing media, the composition comprising a pressure sensitive solution, and one or more chemical agents for complexing with a metal or oxidized metal, and polishing the substrate surface with the polishing media.

Abstract: The present invention for a method and apparatus for detection of chemical mechanical planarization endpoint and device planarity comprises imparting at least one variation of an atomic mass of at least one material within the layer. The variation of the atomic mass within the layer is indicative of the layer thickness. The removal of the layer is monitored by detecting the variation in the atomic mass, and/or a change in concentration of the at least one material, during removal of the layer. Once the concentration of the material reaches a minimum threshold, or an atomic mass is detected at a minimum intensity, within a predetermined time duration, the removal of the layer is terminated. The variation in atomic mass, and/or concentration of materials within the layer is used to measure a planarity of the device.