Abstract: Glass-ceramics and methods of making the same. Embodiments of the invention include abrasive particles. The abrasive particles can be incorporated into a variety of abrasive articles, including bonded abrasives, coated abrasives, nonwoven abrasives, and abrasive brushes.

Abstract: A method for substantially simultaneously polishing a copper conductive structure of a semiconductor device structure and an adjacent barrier layer. The method includes use of a fixed-abrasive type polishing pad with a substantially abrasive-free slurry in which copper is removed at a rate that is substantially the same as or faster than a rate at which a material, such as tungsten, of the barrier layer is removed. The slurry is formulated so as to oxidize copper at substantially the same rate as or at a faster rate than a material of the barrier layer is oxidized. Thus, copper and the barrier layer material have substantially the same oxidation energies in the slurry or the oxidation energy of the barrier layer material in the slurry may be greater than that of copper. Systems for substantially polishing copper conductive structures and adjacent barrier structures on semiconductor device structures are also disclosed.

Abstract: An aqueous chemical mechanical polishing slurry useful for polishing the polysilicon layer of a semiconductor wafer comprising an aqueous solution of at least one abrasive, and at least one alcoholamine. The slurry preferably has a pH of from about 9.0 to about 10.5 and it includes an optional buffering agent.

Abstract: The present invention provides a chemical mechanical planarization (CMP) polishing composition that polishes metal layers at a good removal rate and that provides good planarization of metal layers in a process that can be readily controlled. The CMP polishing composition of the present composition includes a plurality of abrasive particles, a triazole or a triazole derivative, a ferricyanide salt oxidizing agent and water and has a pH of from about 1 to about 6. In addition, the present invention includes a method for removing at least a portion of a metallization layer by polishing a metallization layer using the CMP polishing composition of the invention.

Abstract: The present invention provides a novel polishing material with which silicon nitride ceramic and sialon ceramic can be polished at high efficiency through a tribochemical reaction, and a method for manufacturing thereof, said material is used for polishing a silicon nitride ceramic or sialon ceramic as a material being polished, through a tribochemical reaction, and consists of a ceramic sinter containing an element that causes the ceramic being polished to undergo a dissolution reaction at the grain boundary of the sinter, within the particles thereof, and/or in pores thereof.

Abstract: Fused abrasive particles comprising eutectic material comprising Al2O3—MgO-REO eutectic. The fused abrasive particles can be incorporated into abrasive products such as coated abrasives, bonded abrasives, non-woven abrasives, and abrasive brushes.

Abstract: An abrasive precipitated silica is provided that provides excellent abrasive performance and good viscosity build, but also has a relatively high degree of transmittance, and an index of refraction that is sufficiently low to allow it to be a component of a transparent toothpaste composition having a relatively high concentration of water. The amorphous precipitated silica composition has a refractive index of from about 1.439 to 1.450, a light transmittance of greater than about 60%, and a Brass Einlehner abrasion value of less than about 5 mg loss/100,000 rev.

Abstract: The present invention relates to compositions for the chemical mechanical planarization (“CMP”) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.

Abstract: Amorphous materials, glass-ceramics and methods of making the same. Embodiments of the invention include abrasive particles. The abrasive particles can be incorporated into a variety of abrasive articles, including bonded abrasives, coated abrasives, nonwoven abrasives, and abrasive brushes.

Abstract: Al2O3-rare earth oxide-ZrO2/HfO2 ceramics (including glasses, crystalline ceramics, and glass-ceramics) and methods of making the same. Ceramics according to the present invention can be made, formed as, or converted into glass beads, articles (e.g., plates), fibers, particles, and thin coatings. The particles and fibers are useful, for example, as thermal insulation, filler, or reinforcing material in composites (e.g., ceramic, metal, or polymeric matrix composites). The thin coatings can be useful, for example, as protective coatings in applications involving wear, as well as for thermal management. Certain ceramic particles according to the present invention can be are particularly useful as abrasive particles.

Abstract: A homogeneous fixed abrasive polishing article, or pad, including a matrix of a cured resin coated soft filler material having at least one working surface and an abrasive uniformly distributed throughout the filler material. A method for manufacturing the polishing pad includes the steps of mixing a binder, solvent and filler material together; drying the resin coated filler material; grinding the resin coated filler material; sieving the resin coated filler material; mixing an abrasive material with the resin coated filler material; sieving the abrasive material and the resin coated filler material thereby creating a powder material; transferring the powder material to a mold to form a working surface for the polishing pad; compressing the powder material; and curing the powder material. Alternatively, the abrasive may be mixed with the binder, solvent and filler material in the first step instead of later in the process.

Abstract: Alumina-zirconia materials and methods of making the same. Embodiments of the invention include abrasive particles. The abrasive particles can be incorporated into a variety of abrasive articles, including bonded abrasives, coated abrasives, nonwoven abrasives, and abrasive brushes.

Abstract: A method of bonding an abrasive solid mass to a desired member with an adhesive, wherein the abrasive solid mass has a porous abrasive structure in which a multiplicity of abrasive grains are held together by a bonding agent. The method includes a sealing-film forming step of forming a sealing film on a surface of the abrasive solid mass, for preventing the adhesive from penetrating into pores formed in the porous abrasive structure.

Abstract: A lapping medium comprising a supporting body and a lapping layer formed on the supporting body. The lapping layer includes an abrasive and a binder. The abrasive comprises silica grains, which are pretreated with at least one coupling agent selected from a group consisting of a silane coupling agent, a titanate coupling agent, and an aluminum-contained coupling agent, and a binder.

Abstract: The invention provides a flexible abrasive product comprising a flexible sheet-like substrate comprising a multiplicity of separated resilient bodies connected to each other in a generally planar array in a pattern which provides open spaces between adjacent connected bodies, each body having a first surface and an opposite second surface; and abrasive particles to cause at least the first surface to be an abrasive surface. A method of making the abrasive is provided by providing the substrate and providing abrasive particles to at least the first surface to provide an abrasive surface.

Abstract: A method for buffering a chemical mechanical polish chemical slurry is disclosed. Buffering the slurry reduces buildup of local acidic areas at the interface between the polished metal and the polishing pad. Reduction of the local acidic areas improves the uniformity of the polish and an endpoint signal used to determine when to finish the polish operation.

Abstract: By using a polishing slurry which contains, at least, a polishing grain, an oxidizing agent and a basic amino acid compound, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.

Abstract: A polishing composition comprising the following components (a) to (c):

Abstract: The present invention provides discrete particles and methods of preparing the discrete particles. The discrete particles include a plurality of abrasive grits and a polymeric material that includes a reaction product of components including (a) an epoxy-functional material, (b) at least one of a cyclic anhydride or a diacid derived therefrom, and optionally (c) a polyfunctional (meth)acrylate. The invention also provides articles made from the discrete particles and methods of making such articles. Preferably, the articles are abrasive articles.

Abstract: Al2O3—Y2O3—ZrO2/HfO2 ceramics (including glasses, crystalline ceramics, and glass-ceramics) and methods of making the same. Ceramics according to the present invention can be made, formed as, or converted into glass beads, articles (e.g., plates), fibers, particles, and thin coatings. The particles and fibers are useful, for example, as thermal insulation, filler, or reinforcing material in composites (e.g., ceramic, metal, or polymeric matrix composites). The thin coatings can be useful, for example, as protective coatings in applications involving wear, as well as for thermal management. Certain ceramic particles according to the present invention can be are particularly useful as abrasive particles.

Abstract: For aluminum disks and glass-made hard disks, those disks having a mean waviness of less than 3 Å are being desired in order to increase the density of memory capacity. The present invention provides polishing compositions that can give smoothly polished surfaces for the disks.

Abstract: A polishing composition comprising an abrasive having an average primary particle size of 200 nm or less, an oxidizing agent, an acid having a pK1 of 2 or less and/or a salt thereof, and water, wherein the acid value (Y) of the polishing composition is 20 mg KOH/g or less and 0.2 mg KOH/g or more; a process for reducing fine scratches of a substrate, comprising polishing a substrate to be polished with the above-mentioned polishing composition; and a method for manufacturing a substrate, comprising polishing a substrate to be polished with the above-mentioned polishing composition. The polishing composition can be suitably used for final polishing memory hard disk substrates and polishing semiconductor elements.

Abstract: Methods of making amorphous material and ceramic materials. Embodiments of the invention can be used to make abrasive particles. The abrasive particles can be incorporated into a variety of abrasive articles, including bonded abrasives, coated abrasives, nonwoven abrasives, and abrasive brushes.

Abstract: Abrasive particles and methods of making the same. Embodiments of the invention can be used to make abrasive particles. The abrasive particles can be incorporated into a variety of abrasive articles, including bonded abrasives, coated abrasives, nonwoven abrasives, and abrasive brushes.

Abstract: A polishing film is formed by treating silica particles with heat at 100-400° C. for 4-48 hours and a polishing layer with no internal holes and a thickness of 50 &mgr;m or greater, containing 50-85 weight % of such heat-treated silicon particles is formed by fixing these silica particles with a binder resin.

Abstract: Abrasive articles comprising abrasive particles and at least one of (a) a reaction product of components comprising a resole phenolic resin and a bisphenol/fornaldehyde resin, (b) a bond system is derived by curing a mixture of a resole phenolic resin and a bisphenol/formaldehyde resin, and/or (c) a bond system comprising polymeric material preparable by combining components comprising a resole phenolic resin and a bisphenol/formaldehyde resin.

Abstract: A polishing composition comprising a chelating compound or a salt thereof; a partially esterified product and/or partially etherified product of a polyhydric alcohol compound; and water; a polishing composition comprising water, an abrasive, an intermediate alumina, and a chelating compound or a salt thereof, wherein the content of the intermediate alumina is from 1 to 50 parts by weight, based on 100 parts by weight of the abrasive; and a polishing composition comprising water, an abrasive, an intermediate alumina, a chelating compound or a salt thereof, and a partially esterified product and/or partially etherified product of a polyhydric alcohol compound, wherein the content of the intermediate alumina is from 1 to 50 parts by weight, based on 100 parts by weight of the abrasive. By using the polishing composition, the polishing rate can be increased, and the surface roughness can be lowered, without causing defects such as scratches and pits on the surface of an object to be polished.

Abstract: A method for making a polymeric blast media, and a product of this method. The first step involves blending a melamine compound with a cellulosic material and compression molding said first blend to produce a compression molded first blend. This first blend is then cooled and then ground. In the next step of this method, a urea compound is blended with a nano-clay material to produce a second blend and compression molded. This compression molded second blend is then ground to produce a particulate second blend. The particulate first blend is then blended with the particulate second blend. A blast media product of this method is also disclosed.

Abstract: An object of the present invention is to provide a composition for polishing a magnetic disk substrate that is used as a storage device for a computer or the like, and is capable of producing a magnetic disk substrate polished with high precision suitable for use in combination with a magnetic head that floats at a low level. Another object of the present invention is to provide a method of producing the composition for polishing the magnetic disk substrate. A polishing composition includes alkali metal ions, abrasive grains, a carboxylic acid, an oxidizing agent, and an anti-gelling agent contained in an aqueous medium. In a method of the present invention for preparing a polishing composition, a pH value of an aqueous medium, in which abrasive grains, a carboxylic acid, an oxidizing agent, and an anti-gelling agent are contained, is adjusted to a range of about 1 to about 5 by the addition of alkali metal hydroxide to the aqueous medium.

Abstract: A method and apparatus for planarizing a microelectronic substrate. The apparatus can include a planarizing medium having a relatively hard polishing pad and a planarizing liquid disposed on a generally non-porous planarizing surface of the polishing pad. The planarizing liquid can include a colloidal suspension of colloidal particles having generally smooth external surfaces. The colloidal particles can have a variety of shapes, including a spherical shape, a cylindrical shape, a cubic shape, and a hexagonal shape, among others. The colloidal particles can be formed from a variety of materials, including silicon dioxide, manganese oxide, and cerium oxide.

Abstract: A polishing composition comprising: (a) colloidal silica having a positively charged surface, (b) colloidal silica having a negatively charged surface, (c) at least one acid selected from the group consisting of nitric acid, hydrochloric acid, sulfuric acid, lactic acid, acetic acid, oxalic acid, citric acid, malic acid, succinic acid, butyric acid and malonic acid, (d) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole, tolyltriazole and their derivatives, and (e) water.

Abstract: Silica particles for polishing to planarize a surface of a substrate without generating scratches, having the average particle diameter in the range from 5 to 300 nm, carbon content in the range from 0.5 to 5 weight %, and 10%-compressive elasticity modulus in the range from 500 to 3000 kgf/mm2. When the carbon content in the silica particles is less than 0.5 weight %, there is no residual alkoxy group and siloxane bonding proceeds, so that the obtained particles are hard. In that case, although the polishing rate is high, scratches remain or are generated anew after polishing, and planarity of the polished surface is insufficient. On the other hand, when the carbon content is over 5 weight %, many residual alkoxy group are contained in the particles, so that the particles are relatively soft and a sufficient polishing rate can not be achieved.

Abstract: A method for preparing a slurry for a chemical mechanical polishing process for a semiconductor device includes putting an organic matter in a solvent, preparing a solution by adding a dispersant to the solvent having the organic matter, hydrolyzing the solution, stirring the solution, and heating the solution. A slurry embodying the present invention has relatively small hydrate particles having a hardness lower than oxide particles, and the particles will remain dispersed in a solution for a longer period of time than background art slurries.

Abstract: A fluid abrasive suspension composition has an abrasive, suspending vehicle, and a water-swellable or water-soluble polymer. This composition is used to make a stable dentifrice formulation.

Abstract: A polishing composition for polishing a semiconductor device having at least a tungsten film and an insulating film, which comprises the following components (a) to (d):

Abstract: Glass produced on basis of a raw material in form of a mixture of mainly mineral-containing components comprising sludge from e.g. purification plants and waste products from the industry, and having a determined chemical composition adjusted on basis of knowledge of the chemical composition of the mineral-containing components forming part of the glass. The glass is produced from the raw material which after mineralization is pressed into briquettes that are hardened and subsequently melted in e.g. a blast furnace under oxygen supply, and where the melt is quenched and dried. Large amounts of waste products and waste substances that are normally deposited either treated or untreated can be reused and utilized at production of the glass.

Abstract: A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.

Abstract: A binder for abrasive products, coated abrasive articles and a method of making the same comprising a urea formaldehyde resin precursor cured in the presence of a sole catalyst which consists essentially of at least one salt of an acid with a diamine of the formula H2N—R—NH2 wherein R is an alkylene group of 3 to 10 carbon atoms, and the acid is selected from the group consisting of hydrochloric, citric, nitric, sulphuric, acetic, phosphoric and combinations thereof

Abstract: The present invention provides for the use of bis(perfluoroalkanesulfonyl)imide and its salts as surfactants or additives applications having an extreme environment.

Abstract: In a first aspect a slurry is provided for chemically mechanically polishing alumina and nickel iron to a common plane and in a second aspect a slurry is provided for additionally chemically mechanically polishing copper to a common plane. The slurry includes a first concentration of colloidal silica, a second concentration of potassium and/or sodium persulfate and a third concentration of ammonium persulfate. In the first aspect the first and second concentrations are tailored to chemically mechanically polish the alumina and the nickel iron at the same rate to a common plane and in the second aspect the slurry includes a third concentration of ammonium persulfate at a proper ratio to the potassium or sodium persulfate to chemically mechanically polish the copper at the same rate as the other materials to the same plane.

Abstract: There is disclosed a process for preparing a metal oxide CMP slurry suitable for semiconductor devices, wherein a mixture comprising 1 to 50 weight % of a metal oxide and 50 to 99 weight % of water is mixed in a pre-mixing tank, transferred to a dispersion chamber with the aid of a transfer pump, allowed to have a flow rate of not less than 100 m/sec by pressurization with a high pressure pump, and subjected to counter collision for dispersion through two orifices in the dispersion chamber. The slurry has particles which are narrow in particle size distribution, showing an ultrafine size ranging from 30 to 500 nm. Also, the slurry is not polluted at all during its preparation and shows no tailing phenomena, so that it is preventive of &mgr;-scratching. Therefore, it can be used in the planarization for shallow trench isolation, interlayer dielectrics and inter metal dielectrics through a CMP process.

Abstract: A polishing composition comprising an abrasive and water, wherein the abrasive has a particle size distribution such that (1) a ratio of D90 to D50 (D90/D50) is from 1.3 to 3.0, and (2) D50 is from 10 to 600 nm, wherein D90 is defined as a particle size at 90% counted from a smaller size side on a number base in a cumulative particle size distribution, and wherein D50 is defined as a particle size at 50% counted from a smaller size side on a number base in a cumulative particle size distribution.

Abstract: Spray drying methods for making agglomerate abrasive grains. The agglomerate abrasive grains are useful for making abrasive articles.

Abstract: The present invention provides an LSI device polishing composition containing water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-10.0 adjusted by an alkaline substance, the LSI device polishing composition being used for polishing a copper-containing metal wiring layer in which copper is deposited on an insulating film via barrier metal formed of Ta or TaN; and a method for producing LSI devices by use of the polishing composition. During polishing of a barrier metal such as Ta or TaN and a copper wiring layer, the rate of polishing Ta or TaN can be enhanced, to thereby prevent dishing and erosion.

Abstract: An abrasive is give a top coat layer consisting essentially of an inorganic, anti-loading agent selected from the group consisting of metal silicates, silicas, metal carbonates, and metal sulfates. The metal silicates can be selected from the group consisting of magnesium silicates, potassium aluminum silicates, aluminum silicates, and calcium silicates. In one embodiment, the magnesium silicates include talc, the potassium aluminum silicates include micas, the aluminum silicates include clays, and the calcium silicates include wollastonite. The silicas can be selected from the group consisting of fused silica, fumed silica, and precipitated amorphous silica. The metal carbonates can include calcium carbonate. The metal sulfates can include hydrous calcium sulfate or anhydrous calcium sulfate.

Abstract: A polishing compound containing cocoon-shaped silica particles and crystal silica particles, and water-soluble polymers including; at least one type selected from the groups including ammonium nitrate and ammonium acetate, and at least one type selected from methylcellulose, carboxymethylcellulose, hydroxyethylcellulose, and the group including carboxymethylcellulose.

Abstract: The invention provides an abrasive product having a sheet-like backing including a plurality of concavoconvex portions, the backing also having a first major surface including convex portions and an opposite second major surface including concave portions opposite said convex portions. A coating of a binder is applied over the first major surface and the convex portions. A single layer of a plurality of substantially erectly oriented abrasive particles is bonded to the backing by the binder coating. The abrasive product is made by providing the backing as defined, coating the first major surface with an uncured composition which will cure to provide the binder, applying abrasive particles to the uncured composition coating with an electrostatic sprayer and curing the uncured composition to provide the binder coating.

Abstract: There is provided a process for polishing monocrystalline semiconductor materials of silicon and germanium to a high degree of surface perfection comprising polishing the material with a modified colloidal silica sol having a pH between about 11 to 12.5 and composed of colloidal silica particles which are coated with chemically combined atoms of aluminum to give a surface coverage of about 1 to about 50 aluminum atoms on the surface per 100 silicon atoms on the surface of uncoated particles. The particles of the modified silica sol used in the process of the invention have a specific surface area of about 25 to about 600 square meters per gram with the silica concentration of the sol ranging from about 2 to about 50% by weight.

Abstract: A polishing composition comprising:

Abstract: A slurry composition for chemical mechanical polishing (CMP) is provided. The slurry has a component of abrasives, such as alumina, silica, ceria, etc, an aqueous ozone with determined concentration, and an additive. A pH value of the slurry composition is between 1 and 10.