Abstract: An aqueous chemical mechanical polishing slurry useful for polishing the polysilicon layer of a semiconductor wafer comprising an aqueous solution of at least one abrasive, and at least one alcoholamine. The slurry preferably has a pH of from about 9.0 to about 10.5 and it includes an optional buffering agent.

Abstract: A method for preparing an abrasive article of the present invention comprises coating a conductive binder resin on one surface of a cylinder paper or greige cloth, coating abrasive particles on one side of a PET or nylon film, and combining the coated surface of the cylinder paper or greige cloth with the other side of the PET or nylon film.

Abstract: Provided are slurry compositions suitable for use in a chemical-mechanical planarization process and methods for making same. The compositions include: (a) abrasive particles dispersed in a suspension medium; (b) a peroxygen compound; and (c) a stabilizing agent. The stabilizing agent includes a phosphoric acid, a salt of a phosphoric acid or combinations thereof. The invention has particular applicability to the semiconductor manufacturing industry.

Abstract: A process for the surface polishing of a silicon wafer, includes the successive polishing of the silicon wafer on at least two different polishing plates covered with polishing cloth, with a continuous supply of alkaline polishing abrasive with SiO2 constituents, an amount of silicon removed during the polishing on a first polishing plate being significantly higher than on a second polishing plate, with the overall amount of silicon removed not exceeding 1.5 &mgr;m. A polishing abrasive (1a), then a mixture of a polishing abrasive (1b) and at least one alcohol, and finally ultrapure water (1c) are added to the first polishing plate, and a mixture of a polishing abrasive (2a) and at least one alcohol and then ultrapure water (2b) are added to the second plate.

Abstract: This invention provides a chemical mechanical polishing slurry for polishing a metal film formed on an insulating film with a concave on a substrate wherein the slurry contains a thickener without an ionic group with an opposite sign to a charge on a polishing material surface to 0.001 wt % or more and less than 0.05 wt % to the total amount of the slurry and has a slurry viscosity of 1 mPa·s to 5 mPa·s both inclusive. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing or erosion.

Abstract: Ceramic forming polymers are used to form a tailorable bonding matrix for abrasive grit such as diamond, diamond-like carbon, cubic boron nitride, boron carbide and/or silicon carbide. The ceramic forming polymer is unique in that it can be heated to convert it to a ceramic material at a low enough temperature to prevent damage to the abrasive grits. The ceramic forming polymer may also contain controlled amounts of silicon, carbon, oxygen, and other elements to optimize the properties of the abrasive. A toughening media such as additional ceramic forming polymer, metal and/or polymer resin can be infused into a model of the abrasive tool to permit further tailoring of the abrasive tool to meet widely varying demands of machining both very hard materials as well as softer but more abrasive materials.

Abstract: A composition and a method for planarizing or polishing a surface with the composition are provided. The composition comprises a liquid carrier, a chemical accelerator, and solids comprising about 5-90 wt. % of fumed metal oxide, and about 10-95 wt. % of abrasive particles, wherein about 90% or more of the abrasive particles (by number) have a particle size no greater than 100 nm. The composition of the present invention is useful in planarizing or polishing a surface with high polishing efficiency, uniformity, and removal rate, with minimal defectivity, such as field loss of underlying structures and topography.

Abstract: There is provided an aqueous dispersion for CMP with an excellent balance between chemical etching and mechanical polishing performance. The aqueous dispersion for CMP of the invention is characterized by comprising an abrasive, water and a heteropolyacid. Another aqueous dispersion for CMP according to the invention is characterized by comprising an abrasive, water, a heteropolyacid and an organic acid. Yet another aqueous dispersion for CMP according to the invention is characterized by comprising colloidal silica with a primary particle size of 5-100 nm, water and a heteropolyacid. Preferred for the heteropolyacid is at least one type selected from among silicomolybdic acid, phosphorotungstic acid, silicotungstic acid, phosphoromolybdic acid and silicotungstomolybdic acid. Preferred for the organic acid is at least one selected from among oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, maleic acid, fumaric acid, phthalic acid, malic acid, tartaric acid and citric acid.

Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.

Abstract: A polishing fluid for polishing a metal includes, submicron particles, water, and a nonoxidizing reagent for removal of the metal, the nonoxidizing reagent being a hard base anion species of a Lewis base having a chemical bonding affinity for the metal to deter formation of a passivation oxide on the metal, which hard base anion is present in a concentration that maximizes removal of the metal in the absence of the passivation oxide.

Abstract: A method for making abrasive agglomerate particles from a composition comprising at least a radiation curable binder and solid particulates. The method comprises the steps of forcing the composition through a perforated substrate to form agglomerate precursor particles which then separate from the perforated substrate. Then, the particles are irradiated to form soldified, handleable agglomerate particles before being collected.

Abstract: A process for the preparation of precipitated silica is disclosed. The precipitated silica has a refractive index from about 1.440 to about 1.450, among other properties. The silica is prepared by a method including; a first step of using an initial feedstock of water, an electrolytic salt and a fraction of the total amount of silicate employed; a second step including preneutralizing the feedstock with the acidifying agent until about 50 to 85% of the amount of M2O present has been neutralized; a third step including introducing into the preneutralized feedstock the remaining fraction of alkali metal silicate in aqueous solution and the acidifying agent, under conditions such that the pH of the reaction medium remains substantially constant and from about 8.6 to about 9.

Abstract: To provide a polishing composition which enables maintenance of excellent properties and high quality of the surface of a hard disk without lowering polishing rate during polishing of the surface, and which can provide a polished surface in which the amount of dub-off is considerably reduced as compared with that of a conventional level, a polishing composition containing water, a polishing material (particularly alumina), a polishing accelerator, and at least one of hydroxypropyl cellulose and hydroxyalkyl alkyl cellulose is provided.

Abstract: Granular molding materials for fabricating abrasive articles, such as, for example, grinding wheels, are produced by mixing heated abrasive grains with a resin blend including two phenol-novolac resins. Preferably, the resin blend is added to the abrasive grains in the mixer apparatus of the invention, which can be a bowl type mixer. The mixer can be preheated by directing a heated gas, such as air, across the mixer. The granular molding material can also include a curing agent, fillers and other materials generally employed in fabricating abrasive articles.

Abstract: Method of making abrasive compositions comprised of water-insoluble abrasive polishing agents suspended in an aqueous medium in combination, which avoids the need and associated cost of dry milling the abrasive particle content, and products thereof. In particular, the abrasive compositions made by the method contain appropriately sized abrasive particles provided without the need for drying or dry milling, while also providing an abrasive composition which is rheologically stable, settling-resistant, and re-agglomeration resistant, even during and after transport and/or storage before end-use, such as incorporation into dentifrice formulations or other oral cleaning compositions.

Abstract: A nitride CMP slurry having selectivity to nitride over oxide. The slurry increases the polishing speed of a nitride film by varying the pH of the slurry, and polishes the nitride film faster than an oxide film by decreasing the polishing speed of the oxide film. As a result, the slurry provides a CMP process for manufacturing a high density and highly integrated semiconductor device and a structural development of new concept device.

Abstract: The present invention relates to non-selective slurries for chemical-mechanical polishing of a metal layer and a method for manufacturing thereof, and further to a method for forming a plug in an insulating layer on a wafer using such a slurry. More particularly, a slurry is provided for polishing chemically and mechanically simultaneously a metal layer, a barrier layer and an insulating layer used in a semiconductor integrated circuit, which maintains a pH in the range of weak acidity to weak alkalinity by including a first oxidizing agent to reduce a second oxidizing agent, the second oxidizing agent originally being reduced by oxidizing a metal layer. The second oxidizing agent is recycled by recovering the oxidizing power of the first oxidizing agent. An additive increases a polishing rate of the barrier layer and an abrasive is provided to the slurry in an aqueous medium.

Abstract: The retention of metal-coated superabrasive particles in a resin bond matrix is improved by incorporating a silane coupling agent into a mixture of metal-coated superabrasive particles and resin bond matrix. The silane can incorporated by providing a metal-coated superabrasive particle treated with a silane coupling agent for adding to the resin bond matrix. Alternatively, the silane can reacted into the resin bond matrix and then the metal-coated superabrasive particles added. Both diamond and cubic boron nitride are useful in the invention.

Abstract: An aqueous metal oxide sol slurry has been developed for removal of low dielectric constant materials. The slurry is formed directly in solution utilizing non-dehydrated chemically active metal oxide sols which are formed in a colloidal suspension or dispersion. The oxide sols have not undergone any subsequent drying and the particles are believed to be substantially spherical in structure, dimensionally stable and do not change shape over time. The sol particles are mechanically soft and heavily hydrated which reduces surface damage even in the case where soft polymer or porous dielectric films are polished. The sol particles are formed of a chemically active metal oxide material, or combinations thereof, or can be coated on chemically inactive oxide material such as silicon dioxide or can be coformed therewith. The oxide sols can include a bi-modal particle distribution. The slurry can be utilized in CMP processes, with or without conditioning.

Abstract: A method for production of high purity silica sols comprising the steps: (a) adding a phosphonic acid-based complexing agent to the silicic acid-containing solution forming complexes with metal cations present in said solution; (b) forming in said silicic acid-containing solution a precipitation containing phosphonic acid-based complexing agent and metal cations; (c) removing the precipitation from the solution; and, (d) polymerising the silicic acid in the solution to obtain a silica sol. The invention also relates to silica sols containing at least one phosphonic acid-based complexing agent.

Abstract: The present invention relates to a lapping oil composition which is advantageously used in finish-grinding of a material to provide a high-quality grinding surface, without selective grinding, which is generally caused during lapping and polishing processes of the composite material. The lapping oil composition contains at least one acetylene glycol compound and preferably further contains at least one at least one phosphoric ester compound.

Abstract: A polishing composition comprising an abrasive, an oxidizing agent, a polishing accelerator, and water, wherein the polishing accelerator comprises an organic phosphonic acid; a method for manufacturing a substrate, comprising polishing a substrate to be polished with the above polishing composition; a method for polishing a substrate comprising polishing a substrate to be polished with the above polishing composition; a process for reducing fine scratches of a substrate, comprising polishing a substrate to be polished with the above polishing composition; and a process for accelerating polishing of a magnetic disk substrate, comprising applying the above polishing composition to a magnetic disk substrate to be polished. The polishing composition is highly suitable for polishing a magnetic disk substrate requiring high surface quality to be used in memory hard disk drives.

Abstract: There is provided a polishing compound for sheet metal coating comprising an polishing material and a surfactant in which a RB ceramics and/or CRB ceramics powder is used at least as a part of the polishing material, thereby shortening a stain removing process of a coated surface in reparative sheet metal coating work of cars, etc. without conducting a washing process thereafter.

Abstract: The present invention relates to a polishing composition comprising 30 to 99 wt % of deionized water, 0.1 to 50 wt % of powder of metallic oxide and 0.01 to 20 wt % of cyclic amine. This polishing composition can be used in a chemical mechanical polishing of thin films in integrated circuit manufacturing and has an effect of minimizing the occurrence of microscratches on the thin film after polishing. Thereby it can be applied to the manufacturing process of highly integrated circuits such as Shallow Trench Isolation.

Abstract: To provide a polishing composition which enables maintenance of excellent properties and high quality of the surface of a hard disk without lowering polishing rate during polishing of the surface, and which can provide a polished surface in which the amount of dub-off is considerably reduced as compared with that of a conventional level, a polishing composition containing water, a polishing material (particularly alumina), a polishing accelerator, and at least one of hydroxypropyl cellulose and hydroxyalkyl alkyl cellulose is provided.

Abstract: There is provided a polishing compound for sheet metal coating comprising an polishing material and a surfactant in which a RB ceramics and/or CRB ceramics powder is used at least as a part of the polishing material, thereby shortening a stain removing process of a coated surface in reparative sheet metal coating work of cars, etc. without conducting a washing process thereafter.

Abstract: A polishing slurry for chemical-mechanical polishing, containing 5 to 50% by weight of a colloidal silica abrasive, and from about 0.1 to about 10% by weight of a quaternary ammonium salt which is represented by the formula R4N+X−, where R may be identical or different and is selected from the group consisting of alkyl, alkenyl, alkylaryl, arylalkyl and an ester group, and X is hydroxyl or halogen, is distinguished by a high polishing rate.

Abstract: A method for making an abrasive product comprising forming a structure of a sinterable retaining matrix having at least one first region containing a plurality of abrasive particles embedded therein and at least one second region containing substantially less or no abrasive particles adjacent the first region, at least one of the regions substantially surrounding the other of the regions, sintering the structure to form a unitary structure, wherein the first and second regions are integrated along a border between the regions, and extracting at least the first region from the unitary structure to form an abrasive product.

Abstract: By using a polishing slurry which comprises, at least, a polishing grain, an oxidizing agent and a higher-mono-primary amine, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.

Abstract: Silica particles for incorporation into a dentifrice composition, preferably as a thickening agent, have a polyether glycol such as polyethylene glycol applied thereto in order to enhance dentifrice cohesion

Abstract: A method for making an abrasive material comprising a plurality of hard particles providing the abrasive quality distributed in a retaining matrix for holding the particles in place, the method comprising the steps of placing a mask having openings therein against a carrier capable of supporting a plurality of the particles, providing an affixing capability to an outer side of the mask remote from the carrier to which hard particles will adhere, applying a plurality of hard particles to the outer side of the mask so that a portion of the particles pass through the openings of the mask and form a pattern of the particles on the carrier corresponding to the openings of the mask and another portion of the particles adhere to the mask, separating the mask containing the hard particles adhered to it from the carrier leaving the pattern of the particles on the carrier, at least partially surrounding the particles on the carrier with a retaining matrix material, and heating the retaining matrix material to cause the

Abstract: A grinding stone using a metal material as the main material of a bonding material, which comprises: (A) abrasive grains of at least one member selected from the group consisting of diamond, cubic boron nitride, silicon carbide and aluminum oxide, (B) a bonding material made of at least one metal member selected from the group consisting of cobalt, nickel and copper, or a bonding material made of an alloy comprising at least one member selected from the group consisting of cobalt, nickel and copper, and at least one member selected from the group consisting of iron, silver, tin, zinc and tungsten, and (C) amorphous carbon as an adjuvant, wherein the abrasive grains (A) and the amorphous carbon (C) are distributed in the bonding material (B) in a sea-island structure.

Abstract: The present invention provides an abrasive composition for polishing magnetic recording disk substrates that results in a low surface roughness of the magnetic recording disk, allows the attaining of high-density recording without the occurrence of protrusions or polishing scratches, and enables polishing to be performed at an economical speed. The present invention discloses an abrasive composition for polishing magnetic recording disk substrates comprising water, silicon dioxide, antigelling agent, aluminum nitrate and hydrogen peroxide.

Abstract: Abrasive composition for the manufacture of tools for the execution of surface treatments on stone and ceramic materials, comprising a superabrasive and a binder comprising a frit approximately melting between 450° C. and 650° C. and a refractory material. The composition also comprises a chemically inert abrasive material for thermally and mechanically protecting the superabrasive.

Abstract: A blasting medium which has an average grain size of at most 20 &mgr;m and contains at least 90 mass % of a water-soluble inorganic salt, wherein the content of grains having grain sizes of at least 50 &mgr;m is at most 5 mass %.

Abstract: Provided are methods for making a slurry composition, suitable for use in a chemical-mechanical planarization process. Also provided are compositions made by such methods. The methods comprise combining: (a) abrasive particles; (b) a suspension medium; (c) a peroxygen compound; (d) an etching agent; and (e) an alkyl ammonium hydroxide. The methods and compositions of the present invention are particularly applicable to the semiconductor manufacturing industry.

Abstract: An aqueous metal oxide sol slurry has been developed for removal of low dielectric constant materials. The slurry is formed directly in solution utilizing non-dehydrated chemically active metal oxide sols which are formed in a colloidal suspension or dispersion. The oxide sols have not undergone any subsequent drying and the particles are believed to be substantially spherical in structure, dimensionally stable and do not change shape over time. The sol particles are mechanically soft and heavily hydrated which reduces surface damage even in the case where soft polymer or porous dielectric films are polished. The sol particles are formed of a chemically active metal oxide material, or combinations thereof, or can be coated on chemically inactive oxide material such as silicon dioxide or can be conformed therewith. The oxide sols can include a bi-modal particle distribution. The slurry can be utilized in CMP processes, with or without conditioning.

Abstract: A method of making a slurry, by mixing a quantity of water with dissolvable constituents of an aqueous slurry used for polishing, with the dissolvable constituents being apportioned according to their desired per cent concentrations thereof in the aqueous slurry, and drying the mixture to obtain a reconstitutable slurry having solids of the dissolvable constituents.

Abstract: A polishing composition comprising the following components (a) to (g):

Abstract: A pyrogenic process is used to prepare alkali-doped silica particles. Particles produced by this process exhibit homogeneous doping, reduced agglomeration, greater stability and higher removal rates. Aqueous dispersions containing alkali-doped pyrogenic silica with average particle size less than 100 nm are used for polishing surfaces (CMP).

Abstract: A polishing composition comprising silica particles, water, and Fe salt and/or Al salt of a polyaminocarboxylic acid; a polishing process comprising applying the polishing composition; a process for manufacturing a magnetic disk substrate, comprising the step of polishing a substrate with the polishing composition; a magnetic disk substrate manufactured by applying the polishing composition.

Abstract: A process for chemical mechanical polishing of a working film on a wafer, which entails conducting the chemical mechanical polishing with an aqueous dispersion containing water and composite particles, the composite particles containing polymer particles having at least one of a silicon compound portion or section and a metal compound portion or section formed directly or indirectly on the polymer particles.

Abstract: By providing an abrasive having a ratio of volume-cumulative (95%) average particle size (D95) to volume-cumulative (50%) average particle size (D50) (D95/D50) falling within a range of 1.2 to 3.0 or an abrasive having a volume-cumulative (95%) average particle size (D95) falling within a range of 0.1-1.5 &mgr;m and containing coarse particles having a size more than 10 times the volume-cumulative (50%) average particle size (D50) in an amount, based on the total mass of all the particles, of 1 mass % or less, there can be provided an abrasive, an abrasive slurry, a method for producing an abrasive, and a polishing method which attain, during accurate polishing of substrates such as electronics substrates, a high removal rate and a high-quality surface; i.e., a surface having a high flatness, low surface roughness, and substantially no microscratches or micropits.

Abstract: An acidic polishing slurry for chemical-mechanical polishing, containing 0.1 to 5% by weight of a colloidal silica abrasive and 0.5 to 10% by weight of a fluoride salt, is distinguished by a higher polishing selectivity with regard to the rate at which silica is removed compared to the rate at which silicon nitride is removed compared to a conventional polishing slurry containing pyrogenic silica.

Abstract: A method and apparatus for planarizing a microelectronic substrate. The apparatus can include a planarizing medium having a relatively hard polishing pad and a planarizing liquid disposed on a generally non-porous planarizing surface of the polishing pad. The planarizing liquid can include a colloidal suspension of colloidal particles having generally smooth external surfaces. The colloidal particles can have a variety of shapes, including a spherical shape, a cylindrical shape, a cubic shape, and a hexagonal shape, among others. The colloidal particles can be formed from a variety of materials, including silicon dioxide, manganese oxide, and cerium oxide.

Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.

Abstract: This invention relates to a CMP slurry system for use in semiconductor manufacturing. The slurry system comprises two parts. The first part is a generic dispersion that only contains an abrasive and, optionally, a surfactant and a stabilizing agent. The generic dispersion can be used for polishing metals as well as interlayer dielectrics (ILD). The second part is a novel activator solution comprising at least two components selected from the group consisting of: an oxidizer, acids, amines, chelating agents, fluorine-containing compounds, corrosion inhibitors, buffering agents, surfactants, biological agents and mixtures thereof.

Abstract: A slurry for use in chemical-mechanical polishing of a metal layer comprising particles dispersed in an aqueous medium. The slurry particles will tend to agglomerate when the slurry is at rest and will de-agglomerate with simple stirring. Such metastable slurry systems have been found to be particularly advantageous for metal polishing, particularly the polishing of metal layers during the manufacture of semiconductor devices.

Abstract: The polishing agent of the invention has polishing grains suspended in a solution. The polishing grains consist essentially of a first substance with a glass transition temperature TG, and the polishing grains contain a dopant. The concentration of the dopant is set so that the glass transition temperature TG′ of the doped substance is lower than the glass transition temperature TG of the undoped first substance. The polishing agent is advantageously used for the microscratch-free planarization of a semiconductor substrate or of layers applied on it.

Abstract: An aqueous based ceria slurry system and method for chemical mechanical polishing of semiconductor wafers, the slurry comprising less than 5 wt % abrasive cerium oxide particles and up to about the critical micelle concentration of a cationic surfactant, absent other abrasives, in a neutral to alkaline pH solution is disclosed. Also disclosed is slurry comprising a blend of surfactants including a pre-existing amount of anionic surfactant and an added amount of cationic and/or non-ionic surfactant.