Abstract: A microwaviness reducing agent for polishing a substrate for a precision part, containing either a surfactant having two or more ionic hydrophilic groups, or a polycarboxylic acid compound having 2 to 15 total carbon atoms and having either OH group or groups or SH group or groups, or a salt thereof; a polishing composition for a substrate for a precision part, containing the microwaviness reducing agent, an abrasive and water; a polishing composition comprising water, an abrasive, an organic acid or a salt thereof, and a surfactant, wherein the organic acid is a polycarboxylic acid compound having 2 to 15 total carbon atoms and having either OH group or groups or SH group or groups, and wherein the surfactant has two or more ionic hydrophilic groups in its molecule and has a molecular weight of 300 or more; a method of reducing microwaviness of a substrate for a precision part; and a method for manufacturing a substrate for a precision part.

Abstract: Abrasive articles have an adhesive layer in contact with a liner having protrusions that contact the adhesive layer.

Abstract: The invention provides a chemical-mechanical polishing slurry comprising a liquid, cerium ions as an oxidizer, an abrasive, and a pH increasing substance. The cerium ions are in the liquid in a quantity equal to the inclusion of at least 0.02 molar ammonium cerium nitrate in the liquid. The abrasive is also included in the liquid. The liquid, the cerium ions and the abrasive jointly have a first pH value. The pH increasing substance increases the first pH value to a second pH value above 1.5.

Abstract: A composition is described that comprises an abrasive, and a hydrocarbon containing component that is coupled to the abrasive. Such a composition may be included in a slurry that is used to polish a substrate, when forming a semiconductor device. Also described is a method for modifying a surface of an abrasive that comprises coupling a hydrocarbon containing component to the surface of the abrasive.

Abstract: The object of the present invention is to provide a powder cerium-based abrasive which enables the preparation of a cerium-based abrasive slurry, in which the dispersed state of the abrasive particles is maintained for a long period of time, simply by blending it with a dispersion medium such as water and which makes easier the after-treatment of the abrasive slurry having been used. The cerium-based abrasive of this invention is a cerium-based abrasive including chlorine-containing compounds in which chlorine (element) is contained in amounts, in terms of total mass, equivalent to 0.05% to 5.0% of the mass of the total rare earth oxide contained therein. An abrasive slurry including the abrasive of this invention as a solid content is superior in dispersion maintaining properties of its abrasive particles. Accordingly, an abrasive slurry having a stable concentration of the solid content can be supplied continuously.

Abstract: Abrasive particles and methods of making abrasive particles are disclosed. The abrasive particles may be incorporated into a variety of abrasive articles, including bonded abrasives, coated abrasives, nonwoven abrasives, and abrasive brushes.

Abstract: The present invention provides the colloidal silica slurry which does not have a bad influence, such as corrosion, to a silicon wafer and wiring material on a silicon wafer and inhibits growth of microbes, and whereof preserving stability is high because stability of particle diameters of a colloidal particle is superior and using for a long period continuously is possible. For providing the above, the colloidal silica slurry wherein hydrogen peroxide from 5 to 100 ppm is added.

Abstract: A composition is described that comprises an abrasive, and a hydrocarbon containing component that is coupled to the abrasive. Such a composition may be included in a slurry that is used to polish a substrate, when forming a semiconductor device. Also described is a method for modifying a surface of an abrasive that comprises coupling a hydrocarbon containing component to the surface of the abrasive.

Abstract: A tantalum-based liner for copper metallurgy is selectively removed by chemical-mechanical planarization (CMP) in an acidic slurry of an oxidizer such as hydrogen peroxide, deionized water, a corrosion inhibitor such as BTA, and a surfactant such as Duponol SP, resulting in a high removal rate of the liner without appreciable removal of the exposed copper and with minimal dishing.

Abstract: Gel-free colloidal abrasive polishing compositions and associated methods for polishing (e.g., chemical mechanical polishing) are described. These abrasive polishing compositions are comprised of a surface-modified colloidal abrasive that has been modified with a boron-containing compound(s), such as boron surface-modified colloidal ceria or silica. These compositions are useful in chemical mechanical planarization (CMP) applications as well as in substrate polishing applications. These abrasive compositions are most often negatively-charged colloids, which remain as stable negatively-charged colloids even in acidic media.

Abstract: Nonwoven abrasive articles comprise a porous reinforcing material, a fiber web affixed to the porous reinforcing material, abrasive particles, and a non-elastomeric binder. Methods of making and using nonwoven abrasive articles are also disclosed.

Abstract: A polishing composition for reducing the haze level of the surface of silicon wafers contains hydroxyethyl cellulose, polyethylene oxide, an alkaline compound, water, and silicon dioxide.

Abstract: The present invention provides an abrasive which can prevent any change in its quality, and which can also grind a work piece in a short time in a manner that achieves high quality and high yields, as well as improves a blast effect and productivity in a blast step. This invention also provides an abrasive manufacturing method and device capable of preventing the existence of agglomerated particles and improving the blast effect and the productivity in the blast step. Molten metal M contained in a tundish 100, which comprises an ejecting nozzle 110, is heated by a heating coil 120 and is then caused to eject from the ejecting nozzle 110.

Abstract: A planarizing pad for planarizing a microelectronic substrate, and a method and apparatus for forming the planarizing pad. In one embodiment, planarizing pad material is mixed with compressed gas to form a plurality of discrete elements that are distributed on a support material. At least a portion of the discrete elements are spaced apart from each other on the support material to form a textured surface for engaging a microelectronic substrate and removing material from the microelectronic substrate. The discrete elements can be uniformly or randomly distributed on the support material, and the discrete elements can be directly affixed to the support material or affixed to the support material with an adhesive.

Abstract: The invention pertains to a liquid polish for metals, glass, plastics and their derivatives: the novel liquid polish reduces application and buffing time significantly compared to prior art polishes using animal fat, glycerides, oils, wetting agents or tallow and uses unique compounds for increasing contact between the abrasive oxides within said liquid polish and surface contaminants of polished materials.

Abstract: The present invention can provide an abrasive composition for polishing a semiconductor device which composition contains water, microparticles of an abrasive, and a chelating agent, wherein the abrasive is cerium oxide; the microparticles of cerium oxide have an average particle size of 0.01-1.0 &mgr;m and which composition is used for suitably forming a shallow trench isolation structure in a well-controlled manner during planarization of a semiconductor device including element-isolated structure. The invention also provides a method for producing the semiconductor device by use of the abrasive composition.

Abstract: A polishing composition comprising an abrasive, an acid and/or a salt thereof, and water, wherein copper (Cu) is contained in an amount of 1 mg or less per kg of the polishing composition; a process for reducing a surface defect of a substrate comprising applying to a substrate or a polishing pad a polishing composition comprising an abrasive, an acid and/or a salt thereof, and water, wherein copper (Cu) is contained in an amount of 1 mg or less per kg of the polishing composition fed to the substrate or the polishing pad; and a process for manufacturing a substrate comprising a polishing step comprising applying to a substrate or a polishing pad the above polishing composition.

Abstract: The present invention relates to a structure and manufacturing method of an abrasive article. In this method, a base layer is first formed to affix abrasive particles on a substrate. Gaps between the abrasive particles are then filled with corrosion-resistant particles and a fixation layer is formed to affix the corrosion particles on the base layer. Further, a binding layer is formed on the base layer. Finally, the substrate, the base layer and the fixation layer are removed to expose the abrasive particles, and the binding layer is the bottom of the abrasive article formed thereby. An abrasive surface formed by the abrasive particles is at about the same level. The binding layer surrounding the abrasive particles form a concave surface and increase adhesion.

Abstract: The invention provides a polishing system that comprises a liquid carrier, an alkali metal ion, hydroxide ions, and a polishing pad and/or an abrasive. The abrasive can be dispersed in the liquid carrier of the polishing system or bound to the polishing pad. The alkali metal ion can be any univalent group I metal ion and is present in the polishing system at a concentration of about 0.05 M or more. Hydroxide ions are present in a sufficient amount to provide the system with a pH of about 9 or more. The liquid carrier of the polishing system can be any suitable polar solvent, such as water. The invention further provides a polishing method that involves polishing a portion of a substrate with the polishing system beginning about 6 hours or less after the polishing system is prepared.

Abstract: A film formed on a surface of a wafer on which an integrated circuit is to be constructed can be planarized by using a fixed abrasive tool regardless of the width of elements of a pattern underlying the film. The fixed abrasive tool is liable to form scratches in the surface of the film. A planarizing process of the present invention employs a fixed abrasive tool containing substances harder than the film to be planarized in a content of 10 ppm or below and having a mean pore diameter of 0.2 &mgr;m or below.

Abstract: A non-woven abrasive article of interlaced fibers and abrasive particles and a binder which is preformed into a predetermined three dimensional shape and a method for manufacturing the same. The abrasive article is preformed by a thermal setting the abrasive article while it is maintained in a predetermined three dimensional shape or by heating the article to its glass transition temperature and then cooling the article below the glass transition temperature while it is maintained in a predetermined three dimensional shape. This method allows the manufacture of preformed abrasive articles in various three dimensional shapes, including, for example, a bull nosed shape suitable for finishing a concavely curved surface.

Abstract: An aqueous metal oxide sol slurry has been developed for removal of low dielectric constant materials. The slurry is formed directly in solution utilizing non-dehydrated chemically active metal oxide sols which are formed in a colloidal suspension or dispersion. The oxide sols have not undergone any subsequent drying and the particles are believed to be substantially spherical in structure, dimensionally stable and do not change shape over time. The sol particles are mechanically soft and heavily hydrated which reduces surface damage even in the case where soft polymer or porous dielectric films are polished. The sol particles are formed of a chemically active metal oxide material, or combinations thereof, or can be coated on chemically inactive oxide material such as silicon dioxide or can be coformed therewith. The oxide sols can include a bi-modal particle distribution. The slurry can be utilized in CMP processes, with or without conditioning.

Abstract: An apparatus and method for forming an endless spiral wound abrasive article and the resulting article. The apparatus includes first and second spaced-apart hubs, configured so that a portion of first and second webs passing between the first hub and the second hub is oriented substantially in a plane which remains stationery even if a position of a hub is changed. The apparatus further includes winders and a web joiner. The method includes providing a second web which includes an adhesive disposed on a first surface and a liner releasably affixed to the adhesive. The method includes removing the liner from the second web before positioning the second web adjacent the first web. The first and second webs are wound about the first and second hubs to form a spiral wound article having a desired circumference.

Abstract: A homogeneous fixed abrasive polishing article, or pad, including a matrix of a cured resin coated soft filler material having at least one working surface and an abrasive uniformly distributed throughout the filler material. A method for manufacturing the polishing pad includes the steps of mixing a binder, solvent and filler material together; drying the resin coated filler material; grinding the resin coated filler material; sieving the resin coated filler material; mixing an abrasive material with the resin coated filler material; sieving the abrasive material and the resin coated filler material thereby creating a powder material; transferring the powder material to a mold to form a working surface for the polishing pad; compressing the powder material; and curing the powder material. Alternatively, the abrasive may be mixed with the binder, solvent and filler material in the first step instead of later in the process.

Abstract: For aluminum disks and glass-made hard disks, those disks having a mean waviness of less than 3 Å are being desired in order to increase the density of memory capacity. The present invention provides polishing compositions that can give smoothly polished surfaces for the disks. The polishing compositions are polishing compositions for aluminum disks or substrates having silica on the surface thereof, which contain colloidal silica particle groups having different particle size distributions and have a SiO2 concentration of 0.5 to 50% by weight.

Abstract: A method for chemical mechanical polishing of semiconductor substrates containing a metal layer requiring removal and metal interconnects utilizing a composition containing engineered copolymer molecules comprising hydrophilic functional groups and relatively less hydrophilic functional groups; the engineered copolymer molecules enabling contact-mediated reactions between the polishing pad surface and the substrate surface during CMP resulting in minimal dishing of the metal interconnects in the substrate.

Abstract: Polishing rate selectivity is increased by providing a polyelectrolyte in the polishing slurry. The polishing selectivity of silicon oxide to silicon nitride is enhanced by using an anionic polyelectrolyte. The polishing selectivity of metals to silicon oxide, silicon nitride and/or silicon oxynitride is increased by using a cationic polyelectrolyte.

Abstract: A method is provided for producing a plurality of polycrystalline ultra-hard abrasive grit. The method includes the steps of providing a mass of ultra-hard abrasive particles or a mass of a combination of a precursor for such particles and a suitable solvent/catalyst, forming the mass into a plurality of green state granules, placing the granules with a separating medium between adjacent granules in the reaction zone of a high pressure/high temperature apparatus, subjecting the contents of the reaction zone to elevated temperature and pressure conditions which the ultra-hard abrasive particle is crystallographically stable, recovering the thus sintered material from the reaction zone and removing the separating medium in the sintered material to produce a plurality of crystalline abrasive grit. The ultra-hard abrasive is generally diamond or cubic boron nitride.

Abstract: A method and apparatus for planarizing a microelectronic substrate. The apparatus can include a planarizing medium having a relatively hard polishing pad and a planarizing liquid disposed on a generally non-porous planarizing surface of the polishing pad. The planarizing liquid can include a colloidal suspension of colloidal particles having generally smooth external surfaces. The colloidal particles can have a variety of shapes, including a spherical shape, a cylindrical shape, a cubic shape, and a hexagonal shape, among others. The colloidal particles can be formed from a variety of materials, including silicon dioxide, manganese oxide, and cerium oxide.

Abstract: Fused abrasive particles comprising eutectic material comprising Al2O3—MgO—Y2O3 eutectic. The fused abrasive particles can be incorporated into abrasive products such as coated abrasives, bonded abrasives, non-woven abrasives, and abrasive brushes.

Abstract: The present invention provides a vitrified-bonded abrasive tool wherein the abrasive grit portion comprises a thermally sensitive abrasive grain, such as sintered sol gel microcrystalline alpha alumina abrasive grain or superabrasive grain, and wherein the vitrified bond may be matured by firing at a temperature of about 700 to 1,100 ° C. The invention preferably is carried out with sintered sol gel microcrystalline alpha alumina abrasive grain and a phosphorous oxide-containing, alkaliborosilicate vitrified bond composition. In one embodiment, during firing at about 700 to 1,100 ° C., the vitrified bond of the invention comprises at least two immiscible, amorphous phases.

Abstract: A polishing composition comprising an aqueous medium and abrasive particles, wherein the abrasive particles comprise abrasive particles having a particle size of 2 to 200 nm in an amount of 50% by volume or more, the abrasive particles having a particle size of 2 to 200 nm comprising (i) 40 to 75% by volume of small size particles having a particle size of 2 nm or more and less than 58 nm; (ii) 0 to 50% by volume of intermediate size particles having a particle size of 58 nm or more and less than 75 nm; and (iii) 10 to 60% by volume of large size particles having a particle size of 75 nm or more and 200 nm or less; a polishing composition comprising an aqueous medium and abrasive particles, wherein the abrasive particles comprise abrasive particles (A) having an average particle size of 2 to 50 nm; and abrasive particles (B) having an average particle size of 52 to 200 nm, wherein a weight ratio of A to B (A/B) is from 0.5/1 to 4.

Abstract: An abrasive grain according to the present invention consists of porous particle material in which a large number of fine particles for cutting blade form gaps partly among them and bond loosely each other. The particles for cutting blade are produced by growing primary particles in secondary particles, which are formed by condensing a large number of primary particles, with heat treatment at a temperature of forming necks at bonding points among the primary particles. Therefore, it is possible to have stable processing for many hours with maintaining excellent quality very effectively.

Abstract: An abrasive solid is composed of an organic high polymer matrix and an abrasive material dispersed in the matrix to form a solid mass, whose cutting resistance is from 2 kgf (19.6 N) to 15 kgf (147 N) so that the abrasive solid is severable into two with use of a knife, cutter or the like tool and highly effective to remove rust from any target article. Two or more of such abrasive solids each having these properties are consolidated to form an integral piece that can be trimmed into any desired shape so as to perform both the rough and smooth abrasion works for removal of rust, without using and changing any ordinary abrasive tools one after another.

Abstract: A method for preparing an abrasive article of the present invention comprises coating a conductive binder resin on one surface of a cylinder paper or greige cloth, coating abrasive particles on one side of a PET or nylon film, and combining the coated surface of the cylinder paper or greige cloth with the other side of the PET or nylon film.

Abstract: The present invention provides a composition for chemical-mechanical polishing which comprises an oxidizing agent, an abrasive, and a Fenton's reagent. The oxidizing agent comprises a per compound, such as periodic acid, a peroxide, or a persulfate. The abrasive comprises a metal oxide, such as colloidal silica, alumina, or spinel. The Fenton's reagent comprises a metal selected from a group consisting of metals in Group 1(b) and Group 8, such as iron, copper and silver. The composition is believed to be effective by virtue of the interaction between the oxidizing agent and the Fenton's reagent that is at least partially linked to the surface of the abrasive. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced this method.

Abstract: An abrasive product which comprises a polycrystalline mass of self-bonded abrasive particles of irregular shape, the product being substantially free of a second phase and containing substantial plastic deformation of the abrasive particles. The abrasive particles are preferably diamond or cubic boron nitride and the plastic deformation of the particles is preferably at least 0.3 percent. The abrasive product may be made by subjecting a mass of the particles to elevated temperature and pressure conditions.

Abstract: A polishing composition comprising an abrasive, water and an organic acid or a salt thereof, wherein the composition has a specified viscosity of from 1.0 to 2.0 mPa·s at a shearing rate of 1500 s−1 and 25° C.; a roll-off reducing agent comprising a Brönsted acid or a salt thereof, having an action of lowering viscosity so that the amount of viscosity lowered is 0.

Abstract: A chemical mechanical polishing composition comprising a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.

Abstract: Abrasive articles have an adhesive layer in contact with a liner having protrusions that contact the adhesive layer.

Abstract: A slurry for polishing copper-based metal containing a silica polishing material, an oxidizing agent, an amino acid, a triazole-based compound and water, wherein a content ratio of amino acid to triazole-based compound (amino acid/triazole-based compound (weight ratio)) is 5 to 8.

Abstract: Polishing slurry has abrading particles dispersed in a liquid dispersant. The abrading particles are composite particles each having a first particle and a plurality of second particles smaller than the first particles attached to the surface of the first particle through a metal oxide membrane. The first particles have average diameter of 0.1-20 &mgr;m and the second particles have average diameter of 0.001-0.5 &mgr;m. Elastic particles may be used as the first particles such as polymer particles.

Abstract: An abrasive article including from about 40 to about 80 volume percent interconnected porosity, the article being useful as a segment for a segmented grinding wheel, and a method for fabricating the same. The method includes blending a mixture of abrasive grain, bond material and dispersoid particles, the mixture including from about 40 to about 80 volume percent dispersoid particles. In one embodiment the mixture includes from about 50 to about 80 volume percent dispersoid particles. In another embodiment the mixture includes an organic bond material and from about 40 to about 80 volume percent dispersoid particles. The powder mixture is then pressed into an abrasive laden composite and thermally processed. After cooling the composite is immersed into a solvent, which dissolves substantially all of the dispersoid particles, leaving a highly porous, bonded abrasive article.

Abstract: A polishing composition for polishing a semiconductor wafer includes comprises water, an abrasive that is preferably colloidal silica, water-soluble cellulose having a molecular weight of at least about 1,000,000 and an alkaline compound that is preferably ammonia. Tetra methyl ammonium hydroxide may also be added to the polishing composition.

Abstract: A binder for abrasive products, coated abrasive articles and a method of making the same comprising a urea formaldehyde resin precursor cured in the presence of a sole catalyst which consists essentially of at least one salt of an acid with a diamine of the formula H2N—R—NH2 wherein R is an alkylene group of 3 to 10 carbon atoms, and the acid is selected from the group consisting of hydrochloric, citric, nitric, sulphuric, acetic, phosphoric and combinations thereof.

Abstract: The invention provides a polishing composition comprising (a) a silica abrasive, (b) methanol, and (c) a liquid carrier, wherein the polishing composition has a pH of about 1 to about 6, and the polishing composition is colloidally stable. The invention also provides a method for polishing a substrate comprising a silicon-based dielectric layer using the polishing composition. The invention further provides a method of stabilizing a silica abrasive in a polishing composition by contacting the abrasive with methanol.

Abstract: A polishing composition comprising an abrasive having an average primary particle size of 200 nm or less, an oxidizing agent, an acid having a pK1 of 2 or less and/or a salt thereof, and water, wherein the acid value (Y) of the polishing composition is 20 mg KOH/g or less and 0.2 mg KOH/g or more; a process for reducing fine scratches of a substrate, comprising polishing a substrate to be polished with the above-mentioned polishing composition; and a method for manufacturing a substrate, comprising polishing a substrate to be polished with the above-mentioned polishing composition. The polishing composition can be suitably used for final polishing memory hard disk substrates and polishing semiconductor elements.

Abstract: A polishing composition comprising the following components (a) to (g): (a) at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide and titanium oxide, (b) an aliphatic carboxylic acid, (c) at least one basic compound selected from the group consisting of an ammonium salt, an alkali metal salt, an alkaline earth metal salt, an organic amine compound and a quaternary ammonium salt, (d) at least one polishing accelerating compound selected from the group consisting of citric acid, oxalic acid, tartaric acid, glycine, &agr;-alanine and histidine, (e) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole and tolyltriazole, (f) hydrogen peroxide, and (g) water.

Abstract: A polishing composition for polishing a semiconductor substrate has a pH of under 5.0 and comprises (a) a carboxylic acid polymer comprising polymerized unsaturated carboxylic acid monomers having a number average molecular weight of about 20,000 to 1,500,000 or blends of high and low number average molecular weight polymers of polymerized unsaturated carboxylic acid monomers, (b) 1 to 15% by weight of an oxidizing agent, (c) up to 3.0% by weight of abrasive particles, (d) 50-5,000 ppm (parts per million) of an inhibitor, (e) up to 3.0% by weight of a complexing agent, such as, malic acid, and (f) 0.1 to 5.0% by weight of a surfactant.

Abstract: The present invention provides a composition for chemical-mechanical polishing which comprises at least one abrasive particle having a surface at least partially coated by a activator. The activator comprises a metal other than a metal of Group 4(b), Group 5(b) or Group 6(b). The composition further comprises at least one oxidizing agent. The composition is believed to be effective by virtue of the interaction between the activator coated on the surface of the abrasive particles and the oxidizing agent, at the activator surface, to form free radicals. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced this method.