Abstract: A method for producing a high purity silica sol is provided. This method has enabled use of water glass for the starting material, and the resulting silica sol has a reduced metal impurity Cu and Ni content compared to conventional methods. The method comprises (1) ultrafiltration of an aqueous solution of an alkali silicate; (2) ion exchange process for removal of at least a part of cationic components in the purified aqueous solution of an alkali silicate; (3) another ion exchange process using a chelating ion exchange resin to obtain high purity silicate solution; and (4) adjustment of a part of the high purity silicate solution (seed solution) to alkaline pH and mixing of this solution with another part of the solution (feed solution) to produce a high purity silica sol having a Cu concentration and a Ni concentration (in relation to the dry silica) of up to 50 ppb.

Abstract: An abrasive article includes a bonded abrasive body having abrasive particles contained within a bond material. The bonded abrasive body may include an abrasive particle-to-bond material interfacial modulus of elasticity (MOE) of at least about 225 GPa. The bonded abrasive body may be configured to grind a workpiece comprising metal at a speed of less than about 60 m/s.

Abstract: An abrasive article including a bonded abrasive body having abrasive particles contained within a bond material, the bond material including a vitreous material formed from a mixture having aluminum oxide (Al2O3), bismuth oxide (Bi2O3), and boron oxide (B2O3), and wherein the mixture includes an amount (wt %) of aluminum oxide less than an amount (wt %) of bismuth oxide and the amount (wt %) of aluminum oxide is less than an amount (wt %) of boron oxide.

Abstract: A polycrystalline diamond compact useful for wear, cutting, drilling, drawing and like applications is provided with a first diamond region remote from the working surface which has a metallic catalyzing material and a second diamond region adjacent to or including the working surface containing a non-metallic catalyst and the method of making such a compact is provided. This compact is particularly useful in high temperature operations, such as hard rock drilling because of the improved thermal stability at the working surface.

Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor which make use of this abrasive.

Abstract: The present invention relates to a conditioner for a chemical-mechanical planarization (CMP) pad, which is used in a CMP process that is part of a semiconductor element manufacturing process, and more particularly, to a conditioner for a soft pad, and a method of manufacturing the same, wherein the conditioner can be used under CMP conditions using a slurry having a small amount of polishing particles, and/or a porous pad having comparatively low hardness and very high porosity.

Abstract: A method for producing abrasive agents includes: adding a silica to a manganese compound; heat-treating the manganese compound to which the silica has been added; forming abrasive grains by milling the manganese compound to which the silica has been added and which has been heat-treated; and adding a solvent to the abrasive grains.

Abstract: There is provided an abrasive recovery device and an abrasive recovery method capable of recovering a slurry which is condensed until a concentration of its abrasive becomes high while suppressing an increase in pressure loss and a great decrease in a recovery ratio ascribable to membrane clogging. The abrasive recovery device is a device 1 which recovers an abrasive from a used polishing slurry which has been used in a CMP process, the device including a separation membrane 41 having a cylindrical hole passage to which the used polishing slurry is led, wherein an effective filtration part of the hole passage of the separation membrane 41 has a 0.8 m length or less, and the abrasive recovery device 1 condenses the used polishing slurry until a concentration of the abrasive becomes 10 mass % or more.

Abstract: A polycrystalline diamond material comprising a mass of diamond particles or grains exhibiting inter-granular bonding and a binder material comprises a non-metallic catalyst material for diamond, the non-metallic catalyst material for diamond comprising at least one nitrogen compound derived from an ammonium compound and/or at least one halide compound.

Abstract: An aqueous slicing fluid comprising (A) 0.01-20 wt % of a modified silicone is combined with abrasive grains to form an aqueous slicing slurry which has advantages of dispersion stability of abrasive grains, viscosity stability, and a higher machining accuracy.

Abstract: An uncoated abrasive or superabrasive grain having at least one grain face including three or more features projecting from the grain face wherein the height (h) and the lateral length (l) of each feature is greater than about 0.1 micron.

Abstract: Provided are a method for producing an alumina sintered compact satisfying the following (1) and (2), which comprises mixing and sintering an ilmenite powder and an alumina powder; the alumina sintered compact obtained according to the production method; and an abrasive grain and a grain stone. (1) The total amount of the TiO2-equivalent content of the titanium compound, the Fe2O3-equivalent content of the iron compound and the alumina content is at least 98% by mass; (2) The total amount of the TiO2-equivalent content of the titanium compound and the Fe2O3-equivalent content of the iron compound is from 5 to 13% by mass.

Abstract: In producing nodular silica sol, a polymerized silicic acid solution with viscosity of silicic acid from 0.9 to 100 mPa·s is prepared by aging a silicic acid solution with pH from 1.0 to 7.0 and silica concentration from 0.05 to 3.0% by weight at a temperature from 1 to 98° C. Then, a seed liquid is prepared by adding an alkali to the polymerized solution to adjust the pH from 10 to 12.5 and heating the resultant mixture solution at a temperature from 50 to 150° C. According to necessity, an alkali is added to the obtained seed liquid to adjust the pH in from 9 to 12.5. Finally, a silicic acid solution or a highly purified silicic acid solution is dropped to the seed liquid at a temperature from 20 to 98° C. continuously or intermittently for building up.

Abstract: The CMP slurry regeneration apparatus 200 for regenerating the CMP slurry used for a CMP process patterning metal conductive elements on a semiconductor circuit comprises a gravity separator 205 for precipitating solids in a diluted waste slurry used in the CMP process by gravity sedimentation; a concentrated slurry container 207 for reserving the solid through the gravity sedimentation in the gravity separator 205 as concentrated slurry 206; a solid-liquid separator 209 for catching components contained in the waste slurry as rinsed components through rinsing the waste slurry by remaining hydroxide corresponding to small amount metal ion while removing soluble and solid components formed by the CMP process; and a regenerated slurry container 211 for regenerating the small amount metal ion from the rinsed components.

Abstract: Provided is a method for producing a polishing composition capable of reducing scratches and particles of an object to be polished, after polishing. It is a method for producing a polishing composition including a step of filtering with a filtration filter a silica particle dispersion containing colloidal silica whose primary particles have an average particle diameter in a range of 1 to 100 nm, wherein the filtration filter includes diatomite cationized by use of a polyvalent amine compound having 9 to 200 cationic groups in the molecule.

Abstract: A ceramic abrasive grain product of a ceramic material composition, said ceramic abrasive grain product comprising at least fifty percent of abrasive grains having a uniform grain thickness of from 0.002 to 0.016 inches and a length such that the grain is self dressing when oriented such that the thickness of the grain is exposed to a workpiece, abrasive products made therefrom and method for manufacturing and using same.

Abstract: TiO2 based scrubbing granules, and methods of making and using such TiO2 based scrubbing granules are described. TiO2-based scrubbing granules include granulated TiO2 and about 0.5% to about 20% dry weight inorganic salt binder. Other TiO2 based scrubbing granules include unsintered granulated TiO2 and about 0.5% to about 20% dry weight inorganic salt binder. Inorganic salt binder include sodium aluminate. Methods of making TiO2 based scrubbing granules include i) combining TiO2 particles with inorganic salt binder to form TiO2-binder mixture comprising from about 0.5% to about 20% dry weight binder; ii) granulating the TiO2-binder mixture; and drying the granulated TiO2-binder mixture to form TiO2-based scrubbing granules.

Abstract: A chemical mechanical polishing slurry for polishing a copper layer without excessively or destructively polishing a barrier layer beneath the copper layer is disclosed and includes an acid, a surfactant, and a silica sol having silica polishing particles that are surface modified with a surface charge modifier and that have potassium ions attached thereto. A method for preparing the chemical mechanical polishing slurry and a chemical mechanical polishing method using the chemical mechanical polishing slurry are also disclosed.

Abstract: Producing and using very low packing density ceramic abrasive grits comprising various fused aluminum oxide materials with or without other oxide additives, fused aluminum oxide-zirconium oxide co-fusions with or without other oxide additives, or sintered sol gel aluminum oxide materials with or without other oxide additives where the ceramic abrasive grains are preferably made by crushing bubbles of the material.

Abstract: The present invention relates to a fused ceramic particle having the following chemical composition, as weight percentages based on the oxides, and for a total of 100%: ZrO2+HfO2: balance to 100%; 5.0%<SiO2<32.0%; 2.0%<La2O3<15.0%; 2.5%<Y2O3<11.0%; 0.5%<Al2O3<8.0%; and less than 1.0% of other oxides. Use in particular as a grinding agent, an agent for dispersion in a wet medium, a supporting agent, a heat-exchange agent, or for the treatment of surfaces.

Abstract: A chemical-mechanical planarization pad for semiconductor manufacturing is provided. The pad comprises synthetic fibers that are non-crimped fibers which are present in an amount of 1.0% by weight to 98.0% by weight in the mat and wherein the non-crimped fibers have a length of 0.1 cm to 127 cm and a diameter of 1.0 to 1000 micrometers.

Abstract: Process for the production of an aqueous dispersion of pyrogenically produced metal oxide and metalloid oxide powders with a BET surface area of between 5 and 600 m2/g, with a metal oxide or metalloid oxide content in the dispersion of between 5 and 25 wt. %, comprising the following steps: water, which is optionally adjusted to pH values of between 2 and 4 by adding acids, is circulated from a receiving vessel via a rotor/stator machine, and metal oxide or metalloid oxide powder is introduced, using a feed device, into the shear zone between the slots in the rotor teeth and the stator slots, continuously or discontinuously and with the rotor/stator machine running, in a quantity such that a predispersion with a solids content of between 20 and 40 wt.

Abstract: The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.

Abstract: A bonded abrasive article including a plurality of abrasive grains and an organic bond material, and a method for making said bonded abrasive article, are described herein. The abrasive article has a non-reinforced yield strength of at least about 28 MPa. An abrasive mix is also described herein, including abrasive grains, a bond material and an agglomeration inhibitor. The abrasive mix has a loose bond content that is less than approximately 9.9 %.

Abstract: Methods are provided for forming an abrasive coating on a surface of a backing. An abrasive slurry includes a continuous phase, a first discontinuous phase of abrasive particles dispersed in the continuous liquid phase, and a second discontinuous phase of binder precursor particles dispersed in the continuous liquid phase, so that the continuous liquid phase carries the first and second discontinuous phases. A coated abrasive article is formed by coating the abrasive slurry onto the surface of the backing, and then removing the continuous phase.

Abstract: The invention provides a polishing composition that contains (a) an abrasive comprising (i) first alpha alumina particles that have an average aspect ratio of 0.8:1 to 1.2:1, (ii) second alpha alumina that have an average aspect ratio of greater than 1.2:1, (iii) fumed alumina particles, and (iv) wet-process silica particles, and (b) water. The invention also provides a method of polishing a substrate, especially a nickel-phosphorous substrate, with the polishing composition.

Abstract: Provided herein are chemical mechanical polishing (CMP) slurries and methods for producing the same. Embodiments of the invention include CMP slurries that include (a) a metal oxide; (b) a pH-adjusting agent; (c) a fluorinated surfactant; and (d) a quaternary ammonium surfactant. In some embodiments, the fluorinated surfactant is a non-ionic perfluoroalkyl sulfonyl compound. Also provided herein are methods of polishing a polycrystalline silicon surface, including providing a slurry composition according to an embodiment of the invention to a polycrystalline silicon surface and performing a CMP process to polish the polycrystalline silicon surface.

Abstract: A polishing composition contains colloidal silica. The colloidal silica satisfies the expression A×D×E×F?350,000 where “A” denotes the average aspect ratio (dimensionless) of the colloidal silica, “D” denotes the average particle diameter (units: nm) of the colloidal silica, “E” denotes the standard deviation of the particle size (units: nm) of the colloidal silica, and “F” denotes the volume fraction (units: %) of particles having a diameter of 1 to 300 nm in the colloidal silica. The volume fraction of particles having a diameter of 1 to 300 nm in the colloidal silica is 90% or greater.

Abstract: A slurry for use in a chemical mechanical planarization process for a wafer comprises a chemical portion and a mechanical portion. The chemical portion comprises a surfactant that forms a layer over a metallic layer of the wafer to decreasing dishing to less than an average of 843 ? reduce the static etch rate of the metallic layer. The mechanical portion comprises an abrasive agent to assist in the planarization of the metallic layer of the wafer. In another embodiment, a slurry for polishing a copper layer formed over a first layer is disclosed. The slurry comprises an abrasive agent; and a surfactant comprising at least one non-ionic surfactant to reduce the static etch rate of the copper layer. The shelf life of the slurry exceeds 90 days.

Abstract: A polishing composition contains colloidal silica particles having protrusions on the surfaces thereof. The average of values respectively obtained by dividing the height of a protrusion on the surface of each particle belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles by the width of a base portion of the same protrusion is no less than 0.245. Preferably, the part of the colloidal silica particles that has larger particle diameter than the volume average particle diameter of the colloidal silica particles has an average aspect ratio of no less than 1.15. Preferably, the protrusions on the surfaces of particles belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles have an average height of no less than 3.5 nm.

Abstract: Disclosed are abrasive particles, a method for manufacturing the abrasive particles, and a method for manufacturing a Chemical Mechanical Polishing (CMP) slurry. The method for manufacturing abrasive particles for the CMP slurry includes preparing a raw material precursor, drying the raw material precursor, and calcining the dried raw material precursor using a calcination furnace where a gas atmosphere having relatively less oxygen in comparison with an air atmosphere is created.

Abstract: Provided is a process for producing a polishing liquid composition with which it is possible to give a polished work that has a reduced surface roughness and a reduced amount of particles. The process for producing a polishing liquid composition involves a step in which a raw silica dispersion containing colloidal silica having an average primary-particle diameter of 1-100 nm is filtered through a filter including a filter aid, the filter aid having an average pore diameter, as measured by the mercury intrusion method, of 0.1-3.5 ?m.

Abstract: A method of forming an abrasive article includes providing a green body having abrasive particles including microcrystalline alumina, and heating the green body via microwave radiation to form a bonded abrasive body including the abrasive particles and a bond material comprising a vitreous phase.

Abstract: Silica composite particles include silicon oxide and titanium in an amount of from 0.001% by weight to 10% by weight, wherein the silica composite particles have an average particle diameter of from 30 nm to 500 nm, a particle size distribution index of from 1.1 to 1.5, and an average degree of circularity of primary particles of from 0.5 to 0.85.

Abstract: The present invention relates to a polishing agent for polishing a surface to be polished of an object to be polished, the polishing agent including: first silicon oxide fine particles having an average primary particle size of 5 to 20 nm; second silicon oxide fine particles having an average primary particle size of 40 to 110 nm; and water, in which a ratio of the first silicon oxide fine particles to a total amount of the first silicon oxide fine particles and the second silicon oxide fine particles is from 0.7 to 30% by mass.

Abstract: A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): wherein A is selected from N and P; wherein each R8 is independently selected from hydrogen, a saturated or unsaturated C1-15 alkyl group, C6-15 aryl group, C6-15 aralkyl group, C6-15 alkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).

Abstract: A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; a water soluble cellulose; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a C1-5 alkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive.

Abstract: A method of forming an abrasive article includes forming a mixture comprising a liquid carrier and a glass precursor material, wherein the glass precursor material comprises a material selected from the group of materials consisting of a hydrated metal compound, an organic silicate compound, or a combination thereof. The method further includes providing abrasive grains within the mixture, forming the mixture into a green ceramic body, and heating the green ceramic body to form a bonded abrasive article comprising the abrasive grains contained within a bond matrix, wherein the bond matrix comprises an amorphous phase formed from the glass precursor material.

Abstract: A process for control melting a mixture of coal ash, electric arc furnace dust, recycled glass and additives to create a feedstock. The feedstock is quenched or air dried in a mold to create useful products, such as fracking compounds, abrasives, construction products, building materials, landscaping materials, and the like.

Abstract: An abrasive article comprising an elongated body, a bonding layer overlying a surface of the elongated body, and abrasive grains contained within the bonding layer at an average abrasive grain concentration within a range between about 0.02 ct/m and about 0.30 ct/m.

Abstract: The present invention provides an aqueous CMP slurry composition that includes abrasive particles and from about 0.01% to the limit of solubility in water of a compound according to Formula (I): wherein only one of R1, R2, R3, R4 and R5 is a hydroxyl group (—OH), only one of R1, R2, R3, R4 and R5 is a methoxy group (—OCH3), and the three of R1, R2, R3, R4 and R5 that are not either a hydroxyl group (—OH) or a methoxy group (—OCH3) are hydrogen atoms (—H).

Abstract: A polishing composition for a hard disk substrate includes alumina particles, silica particles, and water. The volume median diameter of secondary particles of the alumina particles measured by a laser beam diffraction method is 0.1 to 0.8 ?m. The volume median diameter of primary particles of the silica particles measured by transmission electron microscope observation is 40 to 150 nm. The standard deviation in number-basis particle size of the primary particles of the silica particles measured by the transmission electron microscope observation is 11 to 35 nm. The polishing composition for a hard disk substrate can preferably reduce the embedding of alumina abrasive grains into the substrate without impairing the productivity.

Abstract: A method of forming a colloidal dispersion includes providing a first continuous material flow, providing a second continuous material flow, combining the first and second continuous material flows, and moving a continuous flow of a colloidal dispersion in a direction downstream of the first and second continuous flows. The first continuous material flow includes one or more of a diluent (e.g., deionized water), a base, and an acid, and the second continuous material flow includes an abrasive particle solution. The first and second material flows are combined with a Reynolds number greater than about 4400 and less than about 25000 (e.g., about 7400 to about 25000). The colloidal dispersion includes the diluent, the base, the acid, and abrasive particles from the abrasive particle solution.

Abstract: To provide a method for producing an alkali silicate aqueous solution containing a reduced amount of foreign substance of plate-like fine particles and a method for producing a silica sol containing a reduced amount of foreign substance of plate-like fine particles. A method for producing an alkali silicate aqueous solution fulfilling the following condition: the existing amount of plate-like fine particles having a length of one side of 0.2 to 4.0 ?m and a thickness of 1 to 100 nm is determined to be 0 to 30%. The method for producing an alkali silicate aqueous solution includes the steps of adjusting a silica concentration of an alkali silicate aqueous solution to 0.5 to 10.0% by mass and filtering the alkali silicate aqueous solution through a filter having a removal rate of particles with a primary particle size of 1.0 ?m of 50% or more.

Abstract: A method of making polycrystalline CBN compacts, high in CBN content, is provided. The method includes making a powdered composition by subjecting a mixture of CBN, present in an amount of at least 80 volume percent of the mixture, and a powdered binder phase to attrition milling. This powdered mixture is subjected to conditions of elevated temperature and pressure suitable to produce CBN compacts.

Abstract: Provided is an abrasive article comprising (a) a metallic foil having a first and second surfaces and voids therebetween, (b) a plurality of abrasive particles substantially in the voids, and (c) an alloy at least partially between the abrasive particles and the foil in the voids, wherein the alloy comprises a second component and a portion of the metallic foil near the voids. Also provided are methods of making and using such abrasive articles.

Abstract: A system including at least one means for mechanical processing of surfaces, in particular steel or cast iron beads using a blasting agent (5). An additive (6) for degreasing and cleaning of the surface to be blasted (2) and/or of the blasting agent is provided with the blasting agent (5), and comprising a granular material (6), which exhibits a lower breaking strength under the mechanical stresses that the blasting agent (5) is subject to during the blasting procedure than the at least one means for mechanical processing of the surfaces themselves. As the granular material (6) breaks down, additional additive (6) is added into the blasting agent (5) such that the proportion of the additive (6) in the blasting agent mixture blend (5) remains largely generally constant even at a prolonged operation of the device.

Abstract: A surface-modified abrasive grain includes an abrasive grain as a substrate, and a film on the abrasive grain that includes a relatively hydrophilic silane component and a relatively hydrophobic silane component. The film can be a single film layer or multiple film layers, wherein a film layer most proximal to the abrasive grain has a predominately hydrophilic silane component, and a film layer more distal to the abrasive grain includes predominately a relatively hydrophobic silane component. Coated abrasive products and bonded abrasive products include the surface-modified abrasive grains.

Abstract: The invention provides a plurality of polymeric particles embedded with silicate that include gas-filled polymeric microelements. The gas-filled polymeric microelements have a shell and a density of 5 g/liter to 200 g/liter. The shell having an outer surface and a diameter of 5 ?m to 200 ?m with silicate particles embedded in the polymer. The silicate particles have an average particle size of 0.01 to 3 ?m. The silicate-containing regions are spaced to coat less than 50 percent of the outer surface of the polymeric microelements; and less than 0.1 weight percent total of the polymeric microelements is associated with i) silicate particles having a particle size of greater than 5 ?m; ii) silicate-containing regions covering greater than 50 percent of the outer surface of the polymeric microelements; and iii) polymeric micro elements agglomerated with silicate particles to an average cluster size of greater than 120 ?m.

Abstract: An outer blade cutting wheel comprising an annular thin disc base of cemented carbide and a blade section of metal or alloy-bonded abrasive grains on the outer periphery of the base is provided. The abrasive grains are diamond and/or cBN grains having an average grain size of 45-310 ?m and a TI of at least 150. The blade section includes overlays having a thickness tolerance (T3max?T3min) of 0.001 mm to 0.1×T2 mm. The blade section has a roundness (ODmax/2?ODmin/2) of 0.001 mm to 0.01×ODmax mm.