Abstract: The invention is a slurry for slicing a silicon ingot, containing a basic material, such as an alkali metal hydroxide, abrasive powder and water, in which the slurry contains the basic material in an amount of from 2 to 6% by mass and glycerin in an amount of from 25 to 55% by mass, based on a total mass of components of the slurry excluding the abrasive powder.

Abstract: In an embodiment, a method of fabricating a polycrystalline diamond compact includes forming an assembly including an at least partially leached polycrystalline diamond table that includes a plurality of interstitial regions therein and a surface; at least one silicon-containing layer positioned adjacent to the surface of the at least partially leached polycrystalline diamond table; and a substrate positioned at least proximate to the at least partially leached polycrystalline diamond table.

Abstract: A polycrystalline diamond compact useful for wear, cutting, drilling, drawing and like applications is provided with a first diamond region remote from the working surface which has a metallic catalyzing material and a second diamond region adjacent to or including the working surface containing a non-metallic catalyst and the method of making such a compact is provided. This compact is particularly useful in high temperature operations, such as hard rock drilling because of the improved thermal stability at the working surface.

Abstract: Disclosed is an adjuvant in use for a process of polishing a cationically charged material and an anionically charged material at the same time with abrasive particles, which is absorbed onto the cationically charged material thereby to restrain the cationically charged material from being polished, resulting in raising a polishing selectivity of the anionically charged material, wherein the adjuvant comprises polymer particles having a core-shell structure with a nano-scale particle size smaller than that of the abrasive particles, surfaces of which are anionically charged. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed.

Abstract: This invention relates to compositions and methods for removing overfilled substrates, preferably at a relatively high removal rates. Advantageously, a composition according to the invention can contain an oxidizer, preferably a per-type oxidizer such as a peroxide, periodic acid, and peracetic acid, and may also optionally contain an abrasive.

Abstract: Colloidal silica having a controllable broad particle size distribution and a controllable minimum particle size is disclosed and claimed. Particles below a predetermined size are excluded from the product colloidal silica of the invention. A method for continuously producing the desired colloidal composition is disclosed comprising the steps of providing preformed silica particles having a surface area which controls the particle size of the colloidal silica product, adding a feed silica comprising an alkaline solution and silicate at a feed rate which is less than a nucleation rate.

Abstract: The present invention relates to a colloidal silica slurry used in a method for manufacturing a glass substrate for an information recording medium, the method including: a lapping step of lapping a main surface of a circular glass plate; a subsequent cerium oxide polishing step of polishing the main surface of the circular glass plate with a slurry containing a cerium oxide abrasive; and a colloidal silica polishing step of polishing the main surface of the circular glass plate with a slurry containing a colloidal silica abrasive after the cerium oxide polishing step, in which the colloidal silica abrasive has a BET average particle size determined by a BET specific surface area measuring method of 40 nm or less, and a smoothness index represented by a ratio (BET average particle size (nm)/Circularity) of the BET average particle size and a circularity indicated by 4·?·S/L2 in which an area per one particle of the colloidal silica abrasive is taken as S and an outer peripheral length thereof is taken as L, o

Abstract: Methods of forming a polycrystalline compact for use in an earth-boring tool include sintering a plurality of hard particles with catalyst material to faun a polycrystalline material that includes a plurality of inter-bonded particles of hard material integrally formed with the catalyst material and introducing at least a portion of the polycrystalline material to a reactive material to remove at least a portion of the catalyst material contained within the polycrystalline material. The reactive material may include at least one of a molten glass, an ionic compound, a leaching liquor, and a chemical plasma. The reactive material may be introduced to the polycrystalline material at a temperature of greater than or equal to a melting point thereof.

Abstract: Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water, and the first agent includes poly(acrylic acid). The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process.

Abstract: A bonded abrasive article is provided that includes abrasive grains within a bond matrix, the abrasive grains including cubic boron nitride (cBN) and the bond matrix including a polycrystalline ceramic phase. The bonded abrasive may have a Modulus of Rupture (MOR) of not less than about 40 MPa. Certain embodiments may have porosity, such as greater than about 5.0 vol %.

Abstract: A method of forming a substantially homogeneous suspension of nanodiamond particles and microdiamond particles is disclosed The method includes disposing a first functional group on a plurality of nanodiamond particles to form derivatized nanodiamond particles, and combining the derivatized nanodiamond particles with a plurality of microdiamond particles and a solvent to form a substantially homogeneous suspension of the derivatized nanodiamond particles and microdiamond particles in the solvent. A method of making an article is also disclosed. The method includes forming a superabrasive polycrystalline diamond compact by combining: a plurality of derivatized nanodiamond particles, a plurality of derivatized microdiamond particles having an average particle size greater than that of the derivatized nanodiamond particles, and a metal solvent-catalyst. The method also includes combining the polycrystalline diamond with a substrate comprising a ceramic.

Abstract: The invention provides fumed silica comprising aggregates that have an aggregate size and a surface area that satisfy particular formulas relating aggregate size to surface area, as well as aggregates that exhibit particular viscosity, power law exponent index, and/or elastic modulus characteristics when dispersed in liquid media. The invention also provides processes of preparing such fumed silica by combining a silica precursor with a stream of combustible gas, combusting the stream, and producing a stream of combusted gas and fumed silica particles, wherein dopants are introduced, the time/temperature profile, or history, of the stream of combusted gas and fumed silica particles is adjusted to allow for post-quench aggregate growth, and/or additional silica precursor is introduced into the stream of combusted gas.

Abstract: In one embodiment of the present invention, a method of fabricating a superabrasive article is disclosed. A mass of unsintered diamond particles may be infiltrated with metal-solvent catalyst from a metal-solvent-catalyst-containing material to promote formation of a sintered body of diamond grains including interstitial regions. At least a portion of the interstitial regions may also be infiltrated with silicon from a silicon-containing material. The silicon reacts with the sintered body to form silicon carbide within a portion of the interstitial regions.

Abstract: A metal-polishing liquid includes colloidal silica and a compound represented by Formula (I) or a compound represented by Formula (II). The colloidal silica is substituted by aluminum atoms at least one portion of the silicon atoms on the surfaces thereof. In Formula (I), R1 represents an alkyl group, alkynyl group, alkenyl group, allyl group or aryl group; R2 represents hydrogen atom, an alkyl group, alkynyl group, alkenyl group, allyl group or aryl group; m represents an integer from 0 to 6. In Formula (II), R3 represents an alkyl group or aryl group; n represents an integer from 1 to 30.

Abstract: The invention provides a composition for slicing a substrate using a wire saw wherein the composition comprises a liquid carrier and an abrasive. The invention further provides methods of slicing a substrate using a wire saw and a composition.

Abstract: An abrasive article includes an abrasive layer having an array of protrusions. The abrasive layer has a thickness not greater than about 500 mils. The abrasive article is free of a backing layer.

Abstract: A flexible sanding composite in accordance with the principles of the invention includes about 10% to about 70% by weight liquid component, such as polybutene and/or oleic acid; about 30% to about 80% by weight abrasive material including calcium carbonate and aluminum oxide; and about 0% to about 5% by weight synthetic rubber. The invention also includes a method of removing dirt or contamination from a surface, or flattening surface irregularities, which includes rubbing the flexible sanding composite against the surface repeatedly until the dirt or contamination is diminished.

Abstract: A method for rapidly synthesizing polycrystalline diamond, includes the steps of machining a large monolithic graphite piece, placing the starting graphite piece in direct contact with an activator piece composed of a nickel-base alloy, and subjecting the contacting pieces to high static pressure and high temperature for a time sufficient to cause the starting monolithic graphite piece to undergo complete transformation into diamond to yield monolithic polycrystalline diamond.

Abstract: A surface-modified abrasive grain includes an abrasive grain as a substrate, and a film on the abrasive grain that includes a relatively hydrophilic silane component and a relatively hydrophobic silane component. The film can be a single film layer or multiple film layers, wherein a film layer most proximal to the abrasive grain has a predominately hydrophilic silane component, and a film layer more distal to the abrasive grain includes predominately a relatively hydrophobic silane component. Coated abrasive products and bonded abrasive products include the surface-modified abrasive grains.

Abstract: The invention relates to a method for treating the surfaces of solid particles to improve the processability of the solid particles in the electrostatic field and to reduce the dust formation which occurs during the processing of the solid particles.

Abstract: The invention provides a chemical-mechanical polishing composition comprising wet-process silica, a stabilizer compound, a potassium salt, a secondary amine compound, and water. The invention further provides a method of polishing a substrate with the polishing composition.

Abstract: Provided is a non-spherical silica sol containing non-spherical silica fine particles dispersed in a dispersion medium, the non-spherical silica fine particles having an average particle diameter in a range of 3 to 150 nm as measured by dynamic light scattering, a minor-diameter/major-diameter ratio in a range of 0.01 to 0.8, and a specific surface area in a range of 10 to 800 m2/g, and also having a plurality of wart-like projections on the surfaces thereof, and a process for producing the non-spherical silica sol. The non-spherical silica fine particles contained in the non-spherical silica sol have a unique structure different from the structure of ordinary non-spherical silica fine particles.

Abstract: Methods and apparatus for providing a chemical mechanical polishing pad. The pad includes a polishing layer having a top surface and a bottom surface. The pad includes an aperture having a first opening in the top surface and a second opening in the bottom surface. The top surface is a polishing surface. The pad includes a window that includes a first portion made of soft plastic and a crystalline or glass like second portion. The window is transparent to white light. The window is situated in the aperture so that the first portion plugs the aperture and the second portion is on a bottom side of the first portion, wherein the first portion acts a slurry-tight barrier.

Abstract: Process for manufacturing a product, including the following successive steps: a) mixing raw materials to form a starting feedstock; b) melting the starting feedstock so as to form a molten liquid; c) solidifying the molten liquid so as to obtain a fused product comprising crystals linked by a glassy phase; and d) crystallization heat treatment of the glassy phase of said fused product, in which the composition of the starting feedstock is adapted in order to manufacture a product having the following chemical composition, as weight percentages based on the oxides, and for a total of 100%: 40%?(ZrO2+HfO2)?94%; 4%<CeO2<31%; 0%?Y2O3; 0%?Al2O3; 2%?SiO2; 0%?MgO; 0%?TiO2; and other oxides?1%.

Abstract: The present invention relates to a polishing composition used in a step of polishing until a barrier layer adjacent to a copper layer is exposed, in a pattern formation of polishing the copper layer provided on an insulating layer through the barrier layer thereby alternately forming a copper embedded wiring and the insulating layer, the polishing composition including: an alicyclic resin acid; a colloidal silica in which a content thereof in the polishing composition is from 0.1 to 1.5% by mass, an average primary particle size thereof is from 10 to 40 nm, an average secondary particle size thereof is from 30 to 80 nm, and (the average secondary particle size×the content) is in a range of from 10 to 40; and tetramethylammonium ion.

Abstract: A slurry composition includes an acidic aqueous solution and one or both of, an amphoteric surfactant and a glycol compound. Examples of the amphoteric surfactant include a betaine compound and an amino acid compound, and examples of the amino acid compound include lysine, proline and arginine. Examples of the glycol compound include diethylene glycol, ethylene glycol and polyethylene glycol.

Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition for polishing a ruthenium-containing substrate in the presence of an oxidizing agent such as hydrogen peroxide without forming a toxic level of ruthenium tetroxide during the polishing process. The composition comprises a particulate abrasive (e.g., silica, alumina, and/or titania) suspended in an aqueous carrier containing a ruthenium-coordinating oxidized nitrogen ligand (N—O ligand), such as a nitroxide (e.g., 4-hydroxy-TEMPO). In the presence of the oxidizing agent, the N—O ligand prevents the deposition of ruthenium species having an oxidation state of IV or higher on the surface of the substrate, and concomitantly forms a soluble Ru(II) N—O coordination complex with oxidized ruthenium formed during CMP of the substrate. CMP methods for polishing ruthenium-containing surfaces with the CMP composition are also provided.

Abstract: Aqueous cerium oxide dispersion Aqueous cerium oxide dispersion, containing 5 to 60% by weight cerium oxide. It can be used to polish SiO2 in the semiconductor industry.

Abstract: The invention provides fumed silica comprising aggregates that have an aggregate size and a surface area that satisfy particular formulas relating aggregate size to surface area, as well as aggregates that exhibit particular viscosity, power law exponent index, and/or elastic modulus characteristics when dispersed in liquid media. The invention also provides processes of preparing such fumed silica by combining a silica precursor with a stream of combustible gas, combusting the stream, and producing a stream of combusted gas and fumed silica particles, wherein dopants are introduced, the time/temperature profile, or history, of the stream of combusted gas and fumed silica particles is adjusted to allow for post-quench aggregate growth, and/or additional silica precursor is introduced into the stream of combusted gas.

Abstract: The present invention provides a polishing composition for a magnetic disk substrate that can reduce scratches and surface roughness of a polished substrate without impairing the productivity, and a method for manufacturing a magnetic disk substrate using the polishing composition. The polishing composition for a magnetic disk substrate includes colloidal silica having a ? CV value of 0 to 10% and water.

Abstract: The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.

Abstract: The polishing composition contains polyoxyethylene sorbitan mono-fatty acid ester, silicon dioxide, water soluble cellulose, an alkaline compound, and water. The content of polyoxyethylene sorbitan mono-fatty acid ester in the polishing composition is less than 0.0025% by mass. The polishing composition is appropriate for final polishing of silicon wafers.

Abstract: A method for producing a highly uniform and highly dense sintered cubic boron nitride compact having high hardness by sintering at a milder condition without a binder, is provided. The method includes deflocculating secondary particles in cubic boron nitride starting powders by dispersing the starting powders in a solution of a deflocculant; molding the green compact after removing the solution of the deflocculant from the starting powders; and then sintering the green compact in the presence of a supercritical fluid source in a supercritical state by pressing and heating the green compact together with the supercritical fluid source. The supercritical fluid source can be one or more selected from a group consisted of polyvinylidene chloride, polyvinyl chloride, polyethylene, polypropylene, polystyrene, a polyester and an ABS resin. In the sintering, the pressure is 5 GPa or higher, and the temperature is 1400° C. or higher.

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier, a cationic polymer, an acid, and abrasive particles that have been treated with an aminosilane compound.

Abstract: The present invention relates to abrasive grain agglomerates composed of fine-particle primary abrasive grains which are held together by means of a binder based on an aluminosilicate having a molar ratio of Al2O3 to SiO2 of from 1:2 to 1:20. The particular advantage of these abrasive grain agglomerates is that the binder cures fully at below 450° C., preferably below 400° C., to form abrasive grain agglomerates having an extraordinarily high strength.

Abstract: A process of making a laminate and laminate formed thereby and a process of making an abrasive laminate and laminate formed thereby include providing a first moving sheet having a first side and a second side, applying active foaming material in a pre-mixed form to the first side, providing a second moving sheet having a first side and second side, the second sheet provided in a manner such that the first side of the second sheet contacts the foaming material to form an uncured laminate and maintaining the first sheet and the second sheet at a predetermined distance relative to one another during a curing period of the foaming material such that the foaming material bonds to the first sheet and the second sheet and upon curing forms a laminate.

Abstract: An aqueous gel wax formulation includes a cationic wax microemulsion and an anionically charged polishing agent having a particle size less than about 200 nanometers and optimally a quaternary ammonium substituted silicone and an amino functional silicone. The components combine to form a gel wax formulation which can be applied without buffing.

Abstract: A method of producing a high-density abrasive compact material includes the steps of providing an electrically conductive mixture of a bonding powder material and abrasive particles or grit; compressing the electrically conductive mixture; and subjecting the compressed electrically conductive mixture to one or more high current pulses to form the abrasive compact is provided.

Abstract: The present invention provides a polishing composition for a glass substrate having a pH of from 1 to 5 and containing silica particles having an average particle size of from 5 to 100 nm, wherein, in a projected image of the silica particles obtainable by an image analysis of electron photomicrographs, an average of an area ratio R of a projected area of the silica particles (A1) to an area of a maximum inscribed circle of the silica particles (A), i.e. (A1/A), is in the range of from 1.2 to 3.0, and the silica particles have an average of 2.

Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

Abstract: An fixed abrasive article is provided which includes a matrix material and abrasive particles embedded within the matrix material. The abrasive particles have a core-shell structure that includes a polycrystalline alpha alumina core and a shell layer overlying the polycrystalline alpha alumina core. The shell layer includes a material selected from the group consisting of silicon oxide and zirconium oxide. Also the polycrystalline alpha alumina core includes grains and having an average grain size of not greater than about 500 nm.

Abstract: A method for manufacturing a diamond composite, includes: a) mixing diamonds with additives, the mixture comprising at least 50 wt % and less than 95 wt % of diamonds and more than 5 wt % additives; b) forming a work piece from the mixture using a pressure of at least 100 Mpa; c) heating the formed work piece to at least 300° C. for removing possible water and wholly or partially removing additives; d) heating the work piece and controlling the heating temperature and heating time so that a certain desired amount of graphite is created by graphitization of diamonds, wherein the amount of graphite created by graphitization is 3-50 wt % of the amount of diamond; e) infiltrating silicon or silicon alloy into the work piece.

Abstract: An abrasive article includes an abrasive body having abrasive grains within a bond material, the abrasive body further including a spinel material disposed at an interface between the abrasive grains and the bond matrix.

Abstract: An abrasive article including an abrasive body having abrasive grains made of microcrystalline alumina contained within a bond material, wherein the bond material comprises a total content of alumina of at least about 15 mol %.

Abstract: The proposed slurry can be used to planarize polymeric candidate ILD materials such Benzocylobutene (BCB), SILK, Polyimide, etc. The slurry consists of colloidal suspension of nanoparticle abrasives made up of Tetraethylorthosilicate (TEOS)-derived silica and Zirconium-dioxide (ZrO2), its derivatives and any materials modified from ZrO2 and/or TEOS, in a chemically active medium. The base solution of the slurry consists of deionized (Dl) water, buffering agents like inorganic buffer comprised of inorganic acids such as TRIS-Hcl, its derivatives and variants, cleansing agents, surface modified catalysts, and surface reagents. The organic solvents like isopropyl alcohol, methanol, and other organic alcohols ranging from 0.0005 to 0.05% are employed for active dissolution of the chemical surface complex formed as a result of the slurry chemical action. The inorganic buffer is so chosen that the complex salts resulting from the reaction impart hydrophobicity to the polished thin film surface.

Abstract: A bonded abrasive article is provided which includes abrasive grains made of cubic boron nitride within a bond matrix including a silicate. The bonded abrasive further includes a reaction product at the interface between the abrasive grains and bond matrix comprising a transition metal nitride.

Abstract: A chemical mechanical polishing composition, the polishing composition includes polishing abrasive, an oxidizing agent, an accelerating compound, an inhibitor, a co-inhibitor, and a solvent as the remaining. The composition can maintain a high removal rate through polishing, meantime it has a feature to inhibit static etch rate and lower the defect of polishing including metal dishing and erosion. Hence it needs no change of the composition for simultaneously removing a most part of a metal layer, particularly for a first stage of polishing bulk copper layer and for a second micro-polishing stage of removing the remaining less copper; the present invention has the advantage of simplifying processing and reducing waste.

Abstract: An abrasive article having an abrasive body including abrasive grains contained within a bond material, wherein the abrasive grains comprise microcrystalline alumina, and wherein the bond material includes less than about 1.0 mol % phosphorous oxide (P2O5), and a ratio measured in mol % between a total content of sodium oxide (Na2O) and a total content of potassium oxide (K2O) defined by [K2O/Na2O] having a value greater than about 0.5.

Abstract: A slurry composition for use as a lubricant and/or a stable suspension medium to suspend inert organic or inorganic particles which is an aqueous or polar solvent carrier containing gel particles as a lubricating and suspending agent for inert organic or inorganic particles. The composition can contain inorganic salts to provide additional electrostatic repulsion.

Abstract: The present invention provide a chemical-mechanical polishing composition for inhibiting dishing and erosion as well as rapidly polishing an insulating film and barrier film at the same time while maintaining the flatness of the substrate surface polished. The present chemical-mechanical polishing composition comprises methanesulfonic acid, an alkali metal ion, an oxidizing agent, a silica abrasive and water, and has a pH of 8 to 12.