Abstract: The invention provides a slurry composition for polishing color filters. The slurry composition at least includes an abrasive, a buffer solution and an additive. The abrasive is selected from the group consisting of alumina, ceria, magnesia, silica, titania, zirconia, cupric oxide, ferric oxide, zinc oxide and the mixture thereof. The buffer solution is used for adjusting pH to a desired range. The additive is used for stabilizing the polishing composition and also improving the polishing performance.

Abstract: Embodiments of the present invention relate to diamond-silicon carbide composites, superabrasive compacts including such diamond-silicon carbide composites, and methods of fabricating such diamond-silicon carbide composites and superabrasive compacts. In one embodiment, a superabrasive compact includes a substrate and a superabrasive table bonded to the substrate. The superabrasive table comprises diamond-silicon carbide composite including a matrix comprising nanometer-sized silicon carbide grains and micrometer-sized diamond grains dispersed through the matrix. In another embodiment, a method of fabricating a superabrasive compact is disclosed. An assembly comprising a mixture including diamond particles and silicon is formed. The silicon comprises amorphous silicon, crystalline silicon crystallized from amorphous silicon formed by a milling process, or combinations thereof. A substrate is positioned in proximity to the mixture.

Abstract: The present invention provides auto-stopping CMP slurry compositions that minimize post-CMP non-uniformity and also extend the time that polishing can be continued beyond the end point without the risk of over-polishing the dielectric silicon dioxide film. Auto-stopping CMP slurry compositions according to the invention include ceria abrasive particles and an effective amount of a polyalkylamine such as polyethyleneimine dispersed in water. The methods of the invention include polishing a topographic dielectric silicon dioxide film layer using the auto-stopping CMP slurry compositions to obtain a dielectric silicon dioxide surface having a desired predetermined minimum step height.

Abstract: To provide a polishing compound which is capable of polishing SiC at a high removal rate, or capable of suppressing polishing of silicon dioxide in an insulating layer on the other hand, while polishing SiC at a high removal rate, in production of a semiconductor integrated circuit device, whereby it is possible to obtain a semiconductor integrated circuit device having a planarized multiplayer structure. The present polishing compound comprising abrasive particles (A), an adjusting agent of removal rate (B) which is at least one selected from the group consisting of a benzotriazole, a 1H-tetrazole, a benzene sulfonic acid, phosphoric acid or organic phosphonic acid, an organic solvent (C) having a relative permittivity of from 15 to 80, a boiling point of from 60 to 250° C. and a viscosity of from 0.5 to 60 mPa·S at 25° C., and water (D).

Abstract: In a method of producing a glass substrate for a mask blank, a surface of the glass substrate is polished by the use of a polishing liquid having a pH value between 7.0 and 7.6 that contains abrasive grains, and the abrasive grains include colloidal silica abrasive grains produced by hydrolysis of an organosilicon compound. The polishing process includes a surface roughness control step for initially finishing the surface of the glass substrate to a predetermined surface roughness by moving a polishing member and the glass substrate relative to each other under a predetermined pressure. This is followed by a protrusion suppressing step, carried out immediately before the end of the polishing process, under a pressure lower than the predetermined pressure, to minimize polishing rate and suppress occurrence of a fine convex protrusion. A mask blank and then a transfer mask are formed from this polished glass substrate.

Abstract: An abrasive tool having an elongated handle member, an ultrasonic vibration source operationally connected to the elongated handle member, and a toughened foamed glass ceramic portion operationally connected to the vibration source. The toughened foamed glass ceramic portion includes a first glassy phase and a second glassy phase, wherein the second glassy phase puts the first glassy phase into compression.

Abstract: An improved cutting tool insert and a method for the preparation of such cutting tool insert, having a sintered alumina and silicon carbide whisker composite material body, comprising the steps of milling and mixing the powdered starting materials of said composite material and forming said material into a preformed workpiece, heating up said workpiece at a heating rate of from about 20 to about 60° C. per minute to a sintering temperature of between from about 1600 to about 2300° C., and holding at said sintering temperature for a holding time of from about 5 to about 60 minutes at a pressure of between from about 20 to about 100 MPa.

Abstract: An abrasive composite, a method for making the abrasive composite, and a polishing apparatus using the abrasive composite are disclosed. The abrasive composite includes a matrix and a plurality of nano-particles distributed therein. The nano-particles are made of at least nano carbon sphere particles and fullerene particles. A ratio by weight of the nano carbon sphere particles to the fullerene particles is advantageously in the range from about 1:2 to about 1:1. The fullerenes are preferably C60 fullerenes. The abrasive composite further includes an amount of diamond particles admixed in the matrix, for improving hardness of the abrasive composite so as to accelerate polishing rate. The abrasive composite is preferably in a form of pellets. The pellets have an average grain size in the range from about 10 nanometers to about 200 nanometers.

Abstract: A coated abrasive product includes a particulate material containing green, unfired abrasive aggregates having a generally spheroidal or toroidal shape, the aggregates formed from a composition comprising abrasive grit particles and a nanoparticle binder. Free abrasive products, bonded abrasive products, and the particulate material also contain aggregates.

Abstract: An abrasive agglomerate includes a plurality of abrasive grains bonded together in a three-dimensional structure by a substantially continuous, non-porous inorganic binder, wherein the abrasive grains have an average size of between about 0.5 microns and about 1500 microns, the inorganic binder is less than about 75 percent, by weight, of the abrasive agglomerate, and the bulk density of the abrasive agglomerate is less than about 90 percent of the bulk density of the abrasive grains.

Abstract: An abrasive grain including a porous particle material in which a large number of secondary particles contain gaps between primary particles bonded to each other. The secondary particles are produced by growing primary particles into secondary particles, which are formed by cohesion of a large number of primary particles, via a heat treatment at a temperature sufficient to form necks at bonding points between the primary particles.

Abstract: A method of abrading a metal workpiece including contacting a metal workpiece with an abrasive article, wherein the abrasive article includes a flexible waterproof backing having a first surface bearing a cured primer coating; and a plurality of shaped structures, each structure having a distal end spaced from said backing and an attachment end attached to the primer coating on the backing, said shaped structures including a mixture of abrasive particles and cured particulate binder, wherein the metal workpiece is contacted with the distal ends of the shaped structures to form an abrading interface; moving the abrasive article relative to the metal workpiece while providing sufficient force between the metal workpiece and the distal ends of the shaped structures of the abrasive article to abrade the metal workpiece; and applying liquid coolant proximate the abrading interface.

Abstract: Nonwoven abrasive articles, particularly lofty nonwoven abrasive articles, with a textured, non-planar surface and an abrasive coating thereon. The coating may cover the entire surface or only portions of the surface. The textured surface, composed of peaks or high regions and valleys or recessed regions, provides improved cut performance over nonwoven abrasive articles having a generally planar abrading surface.

Abstract: A composition and associated method for chemical mechanical planarization of a copper-containing substrate are described and which afford low defectivity levels on copper during copper CMP processing. The composition comprises a colloidal silica that is substantially free of soluble polymeric silicates.

Abstract: The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an oxidizing agent, calcium ion, an organic carboxylic acid, and water, wherein the polishing composition has a pH of about 1.5 to about 7. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.

Abstract: The invention provides a method and apparatus for making an abrasive product comprising providing a substantially horizontally deployed flexible backing having a first surface bearing an at least partially cured primer coating and an opposite second surface; providing a dry flowable particle mixture comprising abrasive particles and particulate curable binder material; depositing a temporary layer comprising said particle mixture on the at least partially cured primer coating of the first surface of the backing; softening said particulate curable binder material to provide adhesion between adjacent abrasive particles; embossing the layer comprising softened particulate curable binder material and abrasive particles to provide a pattern of raised areas and depressed areas and curing the softened particulate curable binder material to convert the embossed layer into a permanent embossed layer comprised of cured particulate binder material and abrasive particles and cure the at least partially cured primer coati

Abstract: Fused abrasive particles comprising eutectic material. The fused abrasive particles can be incorporated into abrasive products such as coated abrasives, bonded abrasives, non-woven abrasives, and abrasive brushes.

Abstract: The present invention provides an aqueous composition useful for polishing nonferrous metal interconnects on a semiconductor wafer comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.01 to 5% by weight copolymer of acrylic acid and methacrylic acid, and balance water, wherein the copolymer of acrylic acid and methacrylic acid has a monomer ratio (acrylic acid/methacrylic acid) in the range of 1:30 to 30:1 and the copolymer has a molecular weight in the range of 1K to 1000K.

Abstract: Disclosed is a slurry composition for final polishing of silicon wafers to achieve mirror surfaces of the wafers. The slurry composition can include deionized water, abrasive particles, a pH-adjusting agent, a water-soluble thickener, an acetylene surfactant, and a heterocyclic amine. The particle diameter of the abrasive particles and the contents of the components can be selected so that the slurry composition can markedly reduce the number of LLS defects having a size larger than about 50 nm formed on the surface of wafers, and greatly reduce the haze and microroughness of wafer surfaces.

Abstract: A solution for fixed abrasive chemical mechanical polishing process including a protection constituent, a hydrolysis constituent and water is described. The protection constituent is used to protect a silicon nitride and its concentration is between 0.001 wt % and 10 wt %. The hydrolysis constituent is used to hydrolyze a silicon oxide and its concentration is between 0.001 wt % and 10 wt %. The concentration ofthe water is between 80 wt % and 99.998 wt %.

Abstract: The present invention is a method for producing a polishing agent in which silica particles are dispersed in an aqueous solution, comprising at least a step of removing metal compound ions from a prepared silica sol by ion exchange (B); a step of purifying further the ion-exchanged silica sol (D); a step of adding alkali metal hydroxide to the purified silica sol (F); and a step of adding an acid to the silica sol to which the alkali metal hydroxide is added (G). There is provided a method for producing a polishing agent which can extremely effectively suppress metal contamination when a silicon wafer or the like is polished can be produced.

Abstract: A blast media for removal of thick coatings from heavy steel and lighter aluminum substrates where a profile is desired for new paint adhesion. The blast media is applied as a free flowing particulate in a stream of a pressurized fluid. The blast media comprises a main ingredient of a glass frit with smaller generally equal amounts by weight of angular copper slag, spherical synthetic iron oxide and aluminum oxide.

Abstract: To provide a polishing composition which is capable of selectively polishing a silicon oxide film against a polysilicon film, and a polishing method employing such a polishing composition. The polishing composition of the present invention comprises abrasive grains selected from silica and ceria; an alkali selected from ammonia, an ammonium salt, an alkali metal salt and an alkali metal hydroxide; and an organic modified silicone oil selected from a polyoxyethylene-modified silicone oil, a poly(oxyethyleneoxypropylene)-modified silicone oil, an epoxy/polyether-modified silicone oil and an amino/polyether-modified silicone oil.

Abstract: To provide a polishing composition which is suitable particularly for an application to polish a wafer containing tungsten, and a polishing process employing such a polishing composition. The polishing composition of the present invention comprises a colloidal silica and hydrogen peroxide. The pH of the polishing composition is from 1 to 4, and the concentration of iron ions in the polishing composition is at most 0.02 ppm. The polishing composition preferably further contains phosphoric acid or a phosphate.

Abstract: The present invention relates to a polishing composition for silicon wafer comprising silica; a basic compound; at least one compound selected from the group consisting of amino acid derivatives represented by formula (1) wherein R1, R2 and R3 are identical or different one another, C1-12alkylene group that may be substituted by hydroxyl group, carboxyl group, phenyl group or amino group, and formula (2) wherein R4 and R5 are identical or different each other, hydrogen atom, or C1-12alkyl group that may be substituted by hydroxyl group, carboxyl group, phenyl group or amino group, with a proviso that both R4 and R5 are not hydrogen at the same time, and R6 is C1-12alkylene group that may be substituted by hydroxyl group, carboxyl group, phenyl group or amino group, and the salts of the amino acid derivatives; and water. The polishing composition can prevent metal contamination, particularly copper contamination in polishing of silicon wafer.

Abstract: A modified sol-gel method to create metal-rich siliceous material, such as colloidal silica or aluminosilicate particles is disclosed. Initially, the metal salt of choice is added to a silicic acid solution or a silicic acid solution containing aluminum salt. The aluminum is added to vary the metal-support interaction as it forms Al—O—Si linkages within the silica matrix. Besides aluminum, other metals can be added that form M-O—Si (M=Ti, B, etc.) linkages, which do not become reduced when treated with a reducing agent. Once the metal, silicic acid and/or aluminum salt is generated, it is subjected to colloidal growth by addition to a basic heel. Upon colloidal synthesis, the metal salt containing colloidal particle is left as is to maximize colloidal stability or is reduced with hydrazine to produce the zero valence metal-containing colloidal particle.

Abstract: A polishing composition includes fumed alumina, alumina other than fumed alumina, colloidal silica, a first organic acid, a second organic acid, an oxidizing agent, and water. When the second organic acid is citric acid, the first organic acid is preferably malic acid, while when the second organic acid is malic acid, the first organic acid is preferably citric acid. When the second organic acid is succinic acid, iminodiacetic acid, itaconic acid, maleic acid, malonic acid, crotonic acid, gluconic acid, glycolic acid, lactic acid, or mandelic acid, the first organic acid is preferably either citric acid or malic acid. The polishing composition can be suitably used for polishing the surface of a substrate for a magnetic disk.

Abstract: A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more compounds selected from one or more acids (A-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is less than 3.7 and from which five acids of lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid are excluded, ammonium salts of the A-group and esters of the A-group, and one or more compounds selected from one or more acids (B-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.7 or more and the five acids, ammonium salts of the B-group and esters of the B-group.

Abstract: Disclosed herein is a polishing slurry and a method of producing the same. The polishing slurry has high selectivity in terms of a polishing speed of an oxide layer to that of a nitride layer used in CMP of an STI process which is essential to produce ultra highly integrated semiconductors having a design rule of 256 mega D-RAM or more, for example, a design rule of 0.13 ?m or less. A method and a device for pre-treating polishing particles, a dispersing device and a method of operating the dispersing device, a method of adding a chemical additive and an amount added, and a device for transferring samples are properly employed to produce a high performance nano ceria slurry essential to CMP for a process of producing ultra highly integrated semiconductors of 0.13 ?m or less, particularly, the STI process.

Abstract: The present invention aims to improve the polishing rate during the polishing process of semiconductor substrates, hard disk substrates or the like by using a polishing composition containing silica particles, water, a basic substance and an inorganic salt, and by a polishing method using such a polishing composition. This polishing composition can be produced by mixing silica particles, water, a basic substance and an inorganic salt, and it is also obtained by adding an inorganic salt into a conventionally known alkaline polishing composition containing silica particles. As the inorganic salt, there is used an alkali metal salt or an ammonium salt such as KCl, K2SO4, KNO3, NaCl, Na2SO4, NaNO3, NH4Cl, NH4NO3, and (NH4)2S04. A polishing composition, wherein silica particles do not agglomerate when an inorganic salt is added, can improve the polishing rate significantly.

Abstract: A chemical mechanical polishing slurry for polishing a copper layer without excessively or destructively polishing a barrier layer beneath the copper layer is disclosed and includes an acid, a surfactant, and a silica sol having silica polishing particles that are surface modified with a surface charge modifier and that have potassium ions attached thereto. A method for preparing the chemical mechanical polishing slurry and a chemical mechanical polishing method using the chemical mechanical polishing slurry are also disclosed.

Abstract: The present invention provides a sol of spinous silica-based particles in which silica-based particles having peculiar forms, spinous forms are dispersed in a solvent. The spinous silica-based particles have verrucous projections formed on surfaces of spherical silica-based particles. In the spinous particles, a value of the surface roughness (SA1/SA2, SA1 indicating a specific surface area measured by the BET method or the Sears method and SA2 indicating a specific surface area converted from an average particle diameter (D2) measured by the image analysis method) is in the range from 1.7 to 10. Furthermore the average diameter (D2) measured by the image analysis method is in the range from 7 to 150 nm.

Abstract: Polishing slurry is caused to be present between a surface of a soft magnetic layer and a polishing tool such as a polishing pad and the surface of the soft magnetic layer and the polishing tool are moved relative to each other. The polishing slurry contains silica particles as abrading particles, compounds containing carboxylic acid and amino polycarboxylic acid and an oxidizing agent as a polishing accelerator, organic and/or inorganic compound of phosphoric acid, nitride and/or nitrite as an anti-corrosion agent and a pH conditioner such that the slurry has pH value between 4 and 11.

Abstract: A coated abrasive article has a backing treatment preparable by at least partially polymerizing an isotropic backing treatment precursor comprising polyepoxide, polyfunctional urethane (meth)acrylate, non-urethane polyfunctional (meth)acrylate, acidic free-radically polymerizable monomer, dicyandiamide, photoinitiator. Methods of making and using the same.

Abstract: A curable composition comprises epoxy resin preparable by reaction of epichlorohydrin with at least one of bisphenol A or bisphenol F, polyfunctional urethane(meth)acrylate, dicyandiamide and photoinitiator. The curable composition is useful for preparing treated backings and coated abrasive articles.

Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing semiconductor materials. The composition has a pH of about 5 or less and comprises colloidal silica, at least one onium compound selected from the group consisting of a phosphonium salt, a sulfonium salt, and a combination thereof, and an aqueous carrier therefor; A CMP method for polishing a surface of a semiconductor material utilizing the composition is also disclosed.

Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) silica particles, (b) about 5×10?3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, barium, and mixtures thereof, based on the total weight of the polishing composition, (c) about 0.1 to about 15 wt. % of an oxidizing agent, and (d) a liquid carrier comprising water. The invention also provides a polishing composition, which optionally comprises an oxidizing agent, comprising about 5×10?3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, and mixtures thereof. The invention further provides methods for polishing a substrate using the aforementioned polishing compositions.

Abstract: Ceramics (including glasses and glass-ceramics) comprising nitrogen, and methods of making the same.

Abstract: A polishing composition for semiconductor wafers containing colloidal silica is disclosed, wherein the colloidal silica is prepared from an active silicic acid aqueous solution obtained by removing alkali from an alkali silicate aqueous solution and a quaternary ammonium base, and is stabilized with a quaternary ammonium base. The polishing composition contains no alkali metals. The polishing composition contains a buffer solution that is a combination of a weak acid having a pKa from 8.0 to 12.5 at 25° C. (pKa is a logarithm of the reciprocal of acid dissociation constant) and a quaternary ammonium base, and exhibits a buffer action in the range from pH8 to pH11.

Abstract: The present invention provides an aqueous composition useful for polishing copper on a semiconductor wafer at a down force pressure of at least less than 20.68 kPa, comprising by weight percent oxidizer, 0.001 to 5 inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, 0.01 to 5 carboxylic acid polymer, 0.01 to 5 modified cellulose, 0.001 to 10 phosphorus-containing compound and 0.001 to 10 boehmite abrasive, wherein the boehmite increases the planarization rate of the copper.

Abstract: This invention provides for provides for abrasive compositions and methods of use of these compositions for the preparation of surfaces for the application of various coatings such as paints, lacquers and varnishes. The abrasive compositions of the invention provide rapid cleaning and dulling of the underlying surface rendering it suitable for the application of paints or other finishes.

Abstract: The invention provides a chemical-mechanical polishing composition consisting essentially of silica, an oxidizing agent, a quaternary ammonium compound, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition provides for enhanced polishing rates when used to polish dielectric films.

Abstract: The present invention provides a polishing composition for a glass substrate having a pH of from 1 to 5 and containing silica particles having an average particle size of from 5 to 100 nm, wherein, in a projected image of the silica particles obtainable by an image analysis of electron photomicrographs, an average of an area ratio R of a projected area of the silica particles (A1) to an area of a maximum inscribed circle of the silica particles (A), i.e. (A1/A), is in the range of from 1.2 to 3.0, and the silica particles have an average of 2.

Abstract: The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte.

Abstract: A method for manufacturing a lapping board having abrasive grains fixed on its surface, which is performed by the steps of: preparing a rotatable metal board having a surface of soft metal, an abrasive slurry-supplying tool arranged over the surface of the metal board, an abrasive-pressing tool which is placed on the metal board and has a hard surface, and a ultrasonic oscillation-generating tool attached to either or both of the abrasive-pressing tool and the metal board; rotating the metal board while supplying an abrasive slurry onto the surface of the metal board and while supplying electric power to the ultrasonic oscillation-generating tool to generate and apply ultrasonic oscillation to either or both of the abrasive-pressing tool and the metal board, whereby introducing the supplied abrasive slurry between the metal board and the abrasive-pressing tool and partly embedding some abrasive grains onto the metal board; and removing unfixed abrasive grains from the metal board.

Abstract: The present invention provides an aqueous composition useful for CMP of a semiconductor wafer containing a metal comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.001 to 10% by weight copolymer blends of a first copolymer and a second copolymer and balance water.

Abstract: A polishing composition for memory hard disk containing water and silica particles, wherein the silica particles have a particle size distribution in which the relationship of a particle size (R) and a cumulative volume frequency (V) in a graph of particle size-cumulative volume frequency obtained by plotting a cumulative volume frequency (%) of the silica particles counted from a small particle size side against a particle size (nm) of the silica particles in the range of particle sizes of from 40 to 100 nm satisfy the following formula (1): V?0.5×R+40 (1), wherein the particle size is determined by observation with a transmission electron microscope (TEM). The polishing composition of the present invention can be even more suitably used for the manufacture of a substrate for precision parts such as substrates for memory hard disks.

Abstract: The solution is useful for removing a barrier material from a semiconductor substrate. The solution comprises, by weight percent, 0.01 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal, 0 to 15 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent and balance water. The barrier removal agent is selected from the group comprising imine derivative compounds, hydrazine derivative compounds and mixtures thereof.

Abstract: A method for chemical mechanical polishing of semiconductor substrates containing a metal layer requiring removal and metal interconnects utilizing a composition containing engineered copolymer molecules comprising hydrophilic functional groups and relatively less hydrophilic functional groups; the engineered copolymer molecules enabling contact-mediated reactions between the polishing pad surface and the substrate surface during CMP resulting in minimal dishing of the metal interconnects in the substrate.

Abstract: Superabrasive tools having improved caustic resistance and their methods of manufacture are disclosed. One aspect may include a method of providing caustic resistance along an entire working surface of a superabrasive tool having embedded superabrasive particles. Such a method may include forming a protective layer through reaction between a reactive source and a reactive element in situ along substantially all of the working surface at an interface between the reactive source and a support matrix including the reactive element, and between each of a plurality of superabrasive particles and the support matrix. At least a portion of the reactive source may then be removed to expose the protective layer. In some aspects, the protective layer may be substantially continuous.